Electroplating fill method, apparatus, and semiconductor product
By combining a dual-chamber electroplating device with electroplating solutions of different concentrations and an electroplating method controlled by pulsed DC current, the problem of incomplete through-hole filling during the electroplating process was solved, achieving efficient through-hole filling, avoiding voids and gaps, and improving electroplating quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SINYANG SEMICONDUCTOR (SHANGHAI) TECHNOLOGY & INNOVATION CO LTD
- Filing Date
- 2026-03-25
- Publication Date
- 2026-06-26
AI Technical Summary
In the existing technology, the electroplating solution has difficulty convection and additive diffusion during the electroplating filling process, which makes it impossible to completely fill the space inside the through hole with a high depth-to-width ratio, resulting in voids and gaps in the through hole.
A dual-chamber electroplating device is used. A bridge-like structure is formed in the through hole by the first electroplating solution. Then, a second electroplating solution of different concentrations is used to electroplat the area to be filled. By combining the control of pulse current and DC current, complete filling of the through hole is ensured.
This effectively prevents the through-hole opening from closing prematurely, improves the electroplating filling efficiency, ensures that through-holes with a high depth-to-width ratio are completely filled without voids or gaps, and improves electroplating quality and efficiency.
Smart Images
Figure CN122279709A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and in particular to an electroplating filling method, apparatus, and semiconductor product. Background Technology
[0002] Through-Glass Via (TGV) technology has gained widespread attention and application in key areas such as advanced packaging, micro-electro-mechanical systems (MEMS), and 3D integration due to its advantages such as good high-frequency performance, high insulation, and excellent mechanical stability. It involves electroplating and filling vertically penetrating vias on a substrate to achieve reliable vertical electrical interconnection.
[0003] Due to difficulties in convection of the plating solution and diffusion of additives during the electroplating filling process, it is impossible to completely fill the space within through holes with a high depth-to-width ratio. This means that defects such as voids and gaps may still exist in the through holes after electroplating filling. Therefore, the electroplating filling method still needs improvement. Summary of the Invention
[0004] The technical problem to be solved by this disclosure is to overcome the defects in the prior art that make it impossible to completely fill the space in through holes with a high depth-to-width ratio due to the difficulty of convection of the electroplating solution and diffusion of additives during the electroplating filling process. This disclosure provides an electroplating filling method, apparatus and semiconductor product.
[0005] This disclosure solves the above-mentioned technical problems through the following technical solution:
[0006] In a first aspect, this disclosure provides an electroplating filling method for electroplating filling at least one through-hole on a substrate; the electroplating filling method is applied to an electroplating filling device; the electroplating filling device includes two independent first electroplating chambers and a second electroplating chamber; the first electroplating chamber is used to store a first electroplating solution; the second electroplating chamber is used to store a second electroplating solution; the electroplating filling method includes:
[0007] In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the substrate is placed in the first electroplating chamber for a first-stage electroplating process, so as to form a bridge-like structure in a preset area within the through hole using the first electroplating solution; wherein, the bridge-like structure is used to form two areas to be electroplated within the through hole.
[0008] The substrate after the first stage of electroplating is transferred to the second electroplating chamber for the second stage of electroplating, so as to electroplat and fill the area to be electroplated in the through hole with the second electroplating solution.
[0009] Wherein, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution; and the copper ion concentration in the first electroplating solution is greater than the copper ion concentration in the second electroplating solution, while the reagent concentration in the first electroplating solution is less than the reagent concentration in the second electroplating solution.
[0010] Optionally, the preset area is the middle area along the axial direction of the through hole;
[0011] And / or,
[0012] The two areas to be electroplated in the through hole are symmetrical.
[0013] Optionally, the electroplating filling equipment includes a driving device;
[0014] The step of placing the substrate in the first electroplating chamber for first-stage electroplating in response to a ratio between the depth and width of the through hole being greater than or equal to a preset ratio includes:
[0015] In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the driving device is controlled to place the substrate in the corresponding position within the first electroplating chamber for the first stage of electroplating.
[0016] And / or,
[0017] The step of transferring the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating includes:
[0018] The drive device is controlled to transfer the substrate after the first stage of electroplating to the corresponding position in the second electroplating chamber for the second stage of electroplating.
[0019] Optionally, the step of transferring the through-hole after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating includes:
[0020] The drive device is controlled to flush the through holes after the first stage of electroplating to remove the first electroplating solution remaining on the substrate.
[0021] Optionally, the step of forming a bridge-like structure in a predetermined area within the through hole using the first electroplating solution includes:
[0022] The electroplating filling equipment is controlled to output a pulse current with preset pulse current parameters, so that the metal ions in the first electroplating solution are deposited into the bridge-shaped structure under the action of the pulse current.
[0023] And / or,
[0024] The step of electroplating the area to be electroplated within the through hole using the second electroplating solution includes:
[0025] The electroplating filling equipment is controlled to output a DC current with preset DC current parameters so that the metal ions in the second electroplating solution form a metal filler under the action of the DC current; wherein the metal filler is used to electroplat the area to be electroplated.
[0026] Optionally, the first stage of electroplating includes at least one first electroplating cycle; the first electroplating cycle includes a first sub-electroplating cycle and a second sub-electroplating cycle; the preset pulse current parameters include a first preset pulse current parameter and a second preset pulse current parameter.
[0027] The current density range in the first preset pulse current parameter falls between 2 amperes / dm² and 5 amperes / dm²; and / or, the current duration in the first preset pulse current parameter falls between 150 milliseconds and 300 milliseconds.
[0028] The current density range in the second preset pulse current parameter falls between -3 amperes / dm² and 8 amperes / dm²; and / or, the current duration in the second preset pulse current parameter falls between 10 milliseconds and 50 milliseconds.
[0029] The step of controlling the electroplating filling equipment to output a pulse current with preset pulse current parameters, so that metal ions in the first electroplating solution are deposited into the bridge-like structure under the action of the pulse current, includes:
[0030] In response to being in the first sub-electroplating cycle, the electroplating filling device is controlled to output a pulse current with the first preset pulse current parameter;
[0031] In response to being in the second sub-electroplating cycle, the electroplating filling device is controlled to output a pulse current with the second preset pulse current parameter.
[0032] Optionally, the second stage of electroplating includes at least one second electroplating cycle; the second electroplating cycle includes a third sub-electroplating cycle and a fourth sub-electroplating cycle; the preset DC current parameters include a first preset DC current parameter and a second preset DC current parameter.
[0033] The current density range in the first preset DC current parameter falls between 0.04 amperes / dm² and 0.08 amperes / dm²; and / or, the current duration in the first preset DC current parameter is 4000 milliseconds;
[0034] The current density range in the second preset DC current parameter falls between 0.1 ampere / dm² and 0.22 ampere / dm²; and / or, the current duration in the second preset DC current parameter is 4000 milliseconds;
[0035] The step of controlling the electroplating filling equipment to output DC current with preset DC current parameters includes:
[0036] In response to being in the third sub-electroplating cycle, the electroplating filling equipment is controlled to output a DC current with a first preset DC current parameter;
[0037] In response to being in the fourth sub-electroplating cycle, the electroplating filling equipment is controlled to output a DC current with a second preset DC current parameter.
[0038] Optionally, the filling method further includes:
[0039] Obtain the load voltage within the second electroplating chamber; wherein the load voltage is used to reflect the current density of the cathode region on the substrate;
[0040] In response to the load voltage change being greater than or equal to a preset change threshold within a preset time period, the second stage of electroplating is determined to be completed, and the driving device is controlled to transfer the substrate that has completed the second stage of electroplating to the target position.
[0041] Secondly, this disclosure also provides an electroplating filling apparatus for electroplating filling at least one through-hole on a substrate; the electroplating filling apparatus includes two independent first electroplating chambers and a second electroplating chamber; the first electroplating chamber is used to store a first electroplating solution; the second electroplating chamber is used to store a second electroplating solution; the electroplating filling apparatus includes:
[0042] The response module, in response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, places the substrate in the first electroplating chamber for first-stage electroplating, so as to form a bridge-like structure at a preset position in the through hole by the first electroplating solution; wherein, the bridge-like structure is used to form two areas to be electroplated in the through hole.
[0043] The transfer module is used to transfer the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, so as to electroplat the area to be electroplated in the through hole by the second electroplating solution.
[0044] Wherein, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution; and the copper ion concentration in the first electroplating solution is greater than the copper ion concentration in the second electroplating solution, while the reagent concentration in the first electroplating solution is less than the reagent concentration in the second electroplating solution.
[0045] Optionally, the preset area is the middle area along the axial direction of the through hole;
[0046] And / or,
[0047] The two areas to be electroplated in the through hole are symmetrical.
[0048] Optionally, the electroplating filling equipment includes a driving device; the response module is further configured to control the driving device to place the substrate in the corresponding position within the first electroplating chamber in response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, so as to perform the first stage of electroplating.
[0049] And / or,
[0050] The transfer module is also used to control the drive device to transfer the substrate after the first stage of electroplating to the corresponding position in the second electroplating cavity for the second stage of electroplating.
[0051] Optionally, the electroplating filling equipment includes:
[0052] The control module is used to control the drive device to flush the through hole after the first stage of electroplating in order to remove the first electroplating solution remaining on the substrate.
[0053] Optionally, the control module is also used to control the electroplating filling equipment to output a pulse current with preset pulse current parameters, so that the metal ions in the first electroplating solution are deposited into the bridge structure under the action of the pulse current;
[0054] And / or,
[0055] The control module is also used to control the electroplating filling equipment to output a DC current with preset DC current parameters, so that the metal ions in the second electroplating solution form a metal filler under the action of the DC current; wherein the metal filler is used to electroplat the area to be electroplated.
[0056] Optionally, the first stage of electroplating includes at least one first electroplating cycle; the first electroplating cycle includes a first sub-electroplating cycle and a second sub-electroplating cycle; the preset pulse current parameters include a first preset pulse current parameter and a second preset pulse current parameter.
[0057] The current density range in the first preset pulse current parameter falls between 2 amperes / dm² and 5 amperes / dm²; and / or, the current duration in the first preset pulse current parameter falls between 150 milliseconds and 300 milliseconds.
[0058] The current density range in the second preset pulse current parameter falls between -3 amperes / dm² and 8 amperes / dm²; and / or, the current duration in the second preset pulse current parameter falls between 10 milliseconds and 50 milliseconds.
[0059] The response module also responds to being in the first sub-electroplating cycle by controlling the electroplating filling device to output a pulse current with the first preset pulse current parameter;
[0060] The response module also responds to being in the second sub-electroplating cycle by controlling the electroplating filling device to output a pulse current with the second preset pulse current parameter.
[0061] Optionally, the second stage of electroplating includes at least one second electroplating cycle; the second electroplating cycle includes a third sub-electroplating cycle and a fourth sub-electroplating cycle; the preset DC current parameters include a first preset DC current parameter and a second preset DC current parameter.
[0062] The current density range in the first preset DC current parameter falls between 0.04 amperes / dm² and 0.08 amperes / dm²; and / or, the current duration in the first preset DC current parameter is 4000 milliseconds;
[0063] The current density range in the second preset DC current parameter falls between 0.1 ampere / dm² and 0.22 ampere / dm²; and / or, the current duration in the second preset DC current parameter is 4000 milliseconds;
[0064] The response module also responds to the third sub-electroplating cycle by controlling the electroplating filling device to output a DC current with a first preset DC current parameter.
[0065] The response module also responds to the fourth sub-electroplating cycle by controlling the electroplating filling device to output a DC current with a second preset DC current parameter.
[0066] Optionally, the electroplating filling equipment further includes:
[0067] An acquisition module is used to acquire the load voltage inside the second electroplating chamber; wherein the load voltage is used to reflect the current density of the cathode region on the substrate;
[0068] The response module also responds to the fact that the change in the load voltage within a preset time is greater than or equal to a preset change threshold, determines that the second stage of electroplating is completed, and controls the drive device to transfer the substrate that has completed the second stage of electroplating to the target position.
[0069] Thirdly, the semiconductor product includes a substrate; the substrate has at least one through-hole whose depth-to-width ratio is greater than or equal to a preset ratio.
[0070] The through-hole is electroplated and filled using the electroplating filling method described above.
[0071] Based on common knowledge in the field, the above-mentioned preferred conditions can be combined arbitrarily to obtain various preferred embodiments of this disclosure.
[0072] The positive and progressive effects of this disclosure are as follows: by forming a bridge-like structure in the through hole through the first stage of electroplating, the current can be avoided from concentrating at the opening of the through hole. This avoids the phenomenon that the opening of the through hole will close prematurely when electroplating and filling through holes with a high depth-to-width ratio, which would prevent the through holes with a high depth-to-width ratio from being completely electroplated and filled. Moreover, through this bridge-like structure, the two areas to be electroplated and filled can be electroplated and filled simultaneously during the second stage of electroplating and filling, thereby improving the electroplating and filling efficiency of the through hole. Attached Figure Description
[0073] Figure 1 A flowchart of an electroplating filling method provided in Embodiment 1 of this disclosure;
[0074] Figure 2 This is a schematic diagram of a through hole after the first electroplating stage is completed in an electroplating filling method provided in Embodiment 1 of this disclosure;
[0075] Figure 3 This is a schematic diagram of a through hole in the second electroplating stage of an electroplating filling method provided in Embodiment 1 of this disclosure;
[0076] Figure 4 This is a schematic diagram of a through hole after the second electroplating stage is completed in an electroplating filling method provided in Embodiment 1 of this disclosure;
[0077] Figure 5 This is a schematic diagram of a module of an electroplating filling device provided in Embodiment 2 of this disclosure. Detailed Implementation
[0078] The present disclosure is further illustrated below by way of embodiments, but the present disclosure is not limited to the scope of the embodiments described herein.
[0079] The prefixes such as "first" and "second" used in this disclosure are merely for distinguishing different descriptive objects and do not limit the position, order, priority, quantity, or content of the described objects. The use of ordinal numbers and other prefixes used to distinguish descriptive objects in this disclosure does not constitute a limitation on the described objects. The description of the described objects is given in the context of the embodiments, and the use of such prefixes should not constitute unnecessary restrictions. Furthermore, in the description of this embodiment, unless otherwise stated, "multiple" means two or more.
[0080] Example 1
[0081] In order to completely fill the space within a through hole with a high ratio between depth and width, Embodiment 1 of this disclosure provides an electroplating filling method. Figure 1 This is a flowchart of an electroplating filling method provided in Embodiment 1 of this disclosure; the electroplating filling method is used to electroplat and fill at least one through-hole on a substrate; the electroplating filling method is applied to an electroplating filling device; the electroplating filling device includes two independent first electroplating chambers and a second electroplating chamber; the first electroplating chamber is used to store a first electroplating solution; the second electroplating chamber is used to store a second electroplating solution; preferably, both the first electroplating chamber and the second electroplating chamber adopt a physical separation design of anode and cathode and can realize vertical electroplating, that is, the cathode working area and the anode area are separated by an ion exchange membrane to isolate anode byproducts and prevent additives in the first electroplating solution and the second electroplating solution from diffusing to the anode. The electroplating filling method includes the following steps:
[0082] Step 101: In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the substrate is placed in the first electroplating chamber for first-stage electroplating, so as to form a bridge-like structure in the preset area of the through hole by the first electroplating solution.
[0083] The bridge-like structure is used to create two areas to be electroplated within the through hole.
[0084] Step 102: Transfer the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, so as to electroplat and fill the area to be electroplated in the through hole with the second electroplating solution.
[0085] like Figure 2 As shown, after the first electroplating stage is completed, a bridge-like structure 12 and two electroplating filling areas 13 will be formed inside the through hole 11. Figure 3 As shown, in the second electroplating stage, electroplating is performed simultaneously from the bottom of the two areas 13 to be electroplated towards the orifice.
[0086] In addition, it should be noted that when the ratio between the depth and width of the through hole is less than the preset ratio, the first stage of electroplating is not required. The substrate can be directly placed in the second electroplating chamber for the second stage of electroplating to directly fill the through hole where the ratio between the depth and width is less than the preset ratio.
[0087] In this embodiment, by first forming a bridge-like structure in the through hole through electroplating, the current can be prevented from concentrating at the opening of the through hole. This avoids the phenomenon that the opening of the through hole will close prematurely when electroplating the through hole with a high depth-to-width ratio, which would prevent the through hole from being completely electroplated and filled. Moreover, the bridge-like structure also allows the two areas to be electroplated and filled at the same time during the second stage of electroplating, thereby improving the electroplating filling efficiency of the through hole.
[0088] In one embodiment, the preset area is the middle area along the axial direction of the through hole.
[0089] It should be noted that the bridge-like structure is generated in the direction perpendicular to the axis of the through hole.
[0090] In one embodiment, the two areas to be electroplated in the through hole are symmetrical.
[0091] In this embodiment, the bridge-like structure is grown in the middle region along the axis of the through hole, which makes the two electroplating filling areas formed in the glass structure symmetrical. This prevents one electroplating filling area from being too shallow, causing the hole to close too quickly, and prevents the other electroplating filling area from being too deep, preventing the second electroplating solution from entering. This ensures that the subsequent electroplating filling of the two areas can be synchronized, ultimately achieving void-free filling of the through hole with a high depth-to-width ratio.
[0092] In one embodiment, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution.
[0093] Specifically, the reagents in the first electroplating solution include at least one of an accelerator, an inhibitor, and a leveling agent. The concentration range of the accelerator is 0.5 ml / L to 3 ml / L, the concentration range of the inhibitor is 6 ml / L to 20 ml / L, and the concentration range of the leveling agent is 6 ml / L to 20 ml / L. ml / L is a concentration unit representing the volume of solute contained in each liter of solution. The ions in the first electroplating solution include at least one of copper ions and chloride ions. The concentration range of copper ions is 40 g / L to 70 g / L, and the concentration range of chloride ions is 30 g / L to 60 g / L. g / L is a concentration unit representing the mass of solute contained in each liter of solution. The concentration range of the acid in the first electroplating solution is 30 g / L to 60 g / L.
[0094] The agents in the second electroplating solution include at least one of an accelerator, an inhibitor, and a leveling agent. The concentration range of the accelerator is 0.5 ml / L to 5 ml / L, the concentration range of the inhibitor is 5 ml / L to 10 ml / L, and the concentration range of the leveling agent is 5 ml / L to 10 ml / L. The ions in the second electroplating solution include at least one of copper ions and chloride ions. The concentration range of copper ions is 30 g / L to 60 g / L, and the concentration range of chloride ions is 40 g / L to 80 g / L. g / L is a concentration unit representing the mass of solute contained in one liter of solution. The concentration range of the acid in the second electroplating solution is 5 g / L to 10 g / L. Preferably, to ensure the electroplating effect, the copper ion concentration in the first electroplating solution can be greater than the copper ion concentration in the second electroplating solution, and the concentration of the inhibitor and / or leveling agent in the first electroplating solution can be less than the concentration of the inhibitor and / or leveling agent in the second electroplating solution.
[0095] In this embodiment, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution, which can provide a better electroplating environment for different stages of electroplating filling.
[0096] Furthermore, since the inhibitors and leveling agents are designed to suppress deposition, if the inhibitor is too strong during the first stage of electroplating filling, it will form a robust inhibitory film at the orifice, severely hindering the entry of ions and other additives into the via, preventing the bridge-like structure from growing. In a weakly inhibited environment, the orifice remains relatively open, allowing for more efficient transport of ions and additives, thus enabling the bridge-like structure to grow more rapidly. During the second stage of electroplating filling, a strong inhibitor forms an adsorption barrier at the opening of the area to be filled, preventing metal ions from migrating and depositing only at the bottom of the area below the barrier, where the inhibitor concentration is lower. As the bottom is filled, the deposition front moves upward until the via is completely filled. Therefore, the lower concentration of inhibitors and / or leveling agents in the first electroplating solution compared to the second electroplating solution allows for more efficient filling of the via.
[0097] In one embodiment, the electroplating filling apparatus includes a driving device; the step of placing the substrate in the first electroplating chamber for a first stage of electroplating in response to a ratio between the depth and width of the through-hole being greater than or equal to a preset ratio includes:
[0098] In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the control drive device places the substrate in the corresponding position within the first electroplating chamber for the first stage of electroplating.
[0099] It should be noted that the electroplating filling equipment also includes a motor and a gripping device. By controlling the motor to generate current, the drive device is driven to grip the substrate according to a preset program, and the gripping device is controlled to place the substrate in the corresponding position according to the preset program.
[0100] In this embodiment, the drive device can automatically place the substrate into the corresponding position within the first electroplating chamber. This not only avoids the misalignment or tilting that can easily occur when manually placing the substrate, but also prevents grease contamination and accidental physical damage to the substrate caused by human contact. Furthermore, the transfer speed of the substrate by the drive device is greater than that by manual placement, which significantly shortens the electroplating filling time and thus improves the efficiency of electroplating filling.
[0101] In one embodiment, the step of transferring the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating includes:
[0102] The control drive device transfers the substrate after the first stage of electroplating to the corresponding position in the second electroplating chamber for the second stage of electroplating.
[0103] In this embodiment, the drive device can automatically transfer the substrate after the first stage of electroplating to the corresponding position in the second electroplating chamber. This not only avoids the misalignment or tilting that can easily occur when manually placing the substrate, but also prevents grease contamination and accidental physical damage to the substrate caused by human contact. Furthermore, the transfer speed of the drive device is greater than that of manual transfer, which significantly shortens the electroplating filling time and thus improves the efficiency of electroplating.
[0104] In one embodiment, prior to the step of transferring the through-hole after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, the following steps are included:
[0105] The control drive device flushes the through holes after the first stage of electroplating to remove the residual first electroplating solution on the substrate.
[0106] Preferably, the through holes after the first stage of electroplating can be rinsed with deionized water and nitrogen by controlling the drive device to remove the first electroplating solution remaining on the substrate.
[0107] In this embodiment, after the first stage of electroplating is completed, the first electroplating solution still remains on the substrate (e.g., on the substrate surface and inside the vias). If the second stage of electroplating is performed directly without rinsing it thoroughly, the residual first electroplating solution will interfere with the reagents and ionic components in the second electroplating solution, potentially causing voids to appear inside the vias after the second stage of electroplating is completed. Therefore, before transferring the vias after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, rinsing the vias after the first stage of electroplating with deionized water and nitrogen can prevent contamination of the second electroplating solution, thereby ensuring the electroplating filling quality of the vias. Furthermore, by controlling the drive device to use deionized water and nitrogen to rinse the vias after the first stage of electroplating, the rinsing time will be greatly shortened, thereby improving the efficiency of electroplating filling.
[0108] In one embodiment, the step of forming a bridge-like structure in a predetermined region within a through-hole using a first electroplating solution includes:
[0109] The electroplating filling equipment is controlled to output a pulse current with preset pulse current parameters so that the metal ions in the first electroplating solution are deposited into a bridge-like structure under the action of the pulse current.
[0110] In this embodiment, using pulsed current can more efficiently deposit metal ions in the first electroplating solution, thereby accelerating the growth efficiency of the bridge structure.
[0111] In one embodiment, the step of electroplating the area to be electroplated within the through hole using a second electroplating solution includes:
[0112] The electroplating filling equipment is controlled to output a DC current with preset DC current parameters so that the metal ions in the second electroplating solution form a metal filler under the action of the DC current; wherein the metal filler is used to electroplat the area to be electroplated.
[0113] In this embodiment, using direct current can more efficiently cause metal ions in the second electroplating solution to form metal fillers, thereby accelerating the electroplating filling efficiency of the area to be electroplated.
[0114] In one embodiment, the first stage of electroplating includes at least one first electroplating cycle; the first electroplating cycle includes a first sub-electroplating cycle and a second sub-electroplating cycle; the preset pulse current parameters include a first preset pulse current parameter and a second preset pulse current parameter.
[0115] The current density range in the first preset pulse current parameter falls between 2 amperes / dm² and 5 amperes / dm²; and / or, the current duration in the first preset pulse current parameter falls between 150 milliseconds and 300 milliseconds.
[0116] The current density range in the second preset pulse current parameter falls between -3 amperes / dm² and 8 amperes / dm²; and / or, the current duration in the second preset pulse current parameter falls between 10 milliseconds and 50 milliseconds.
[0117] The step of controlling the electroplating filling equipment to output a pulse current with preset pulse current parameters, so that metal ions in the first electroplating solution are deposited into a bridge-like structure under the action of the pulse current, includes:
[0118] In response to being in the first sub-electroplating cycle, the electroplating filling equipment is controlled to output a pulse current with a first preset pulse current parameter;
[0119] In response to being in the second sub-electroplating cycle, the electroplating filling equipment is controlled to output a pulse current with a second preset pulse current parameter.
[0120] Furthermore, electroplating is performed for 30 minutes in the first electroplating cycle to improve the quality of the grown bridge-like structure.
[0121] In this embodiment, the forward pulse current of the first sub-electroplating cycle can control the longitudinal growth rate of the bridge-like structure, allowing metal ions in the first electroplating solution to be deposited better at preset positions within the through-hole. Because the diffusion layer within the through-hole is thin, deposition preferentially occurs in the region with the greatest central curvature within the through-hole, thus enabling rapid deposition of metal ions in the first electroplating solution in a direction perpendicular to the through-hole axis, achieving rapid formation of the bridge-like structure. The reverse pulse current of the second sub-electroplating cycle can slightly dissolve any protrusions or rough deposits that may form at the orifice of the through-hole, providing a dynamic leveling effect, maintaining the openness and regularity of the through-hole's shape, ensuring the restoration of the chemical environment within the through-hole, and guaranteeing effective deposition under the next forward pulse current. The set first preset pulse current parameters allow for better deposition of metal ions in the first electroplating solution, accelerating the formation of the bridge-like structure. The set second pulse current parameters better dissolve any protrusions or rough deposits that may form at the orifice of the through-hole, thereby better ensuring effective deposition of metal ions under the next forward pulse current.
[0122] In one embodiment, the second-stage electroplating includes at least one second electroplating cycle; the second electroplating cycle includes a third sub-electroplating cycle and a fourth sub-electroplating cycle; the preset DC current parameters include a first preset DC current parameter and a second preset DC current parameter.
[0123] The current density range in the first preset DC current parameter falls between 0.04 amperes / dm² and 0.08 amperes / dm²; and / or, the current duration in the first preset DC current parameter is 4000 milliseconds;
[0124] The current density range in the second preset DC current parameter falls between 0.1 amperes / dm² and 0.22 amperes / dm²; and / or, the current duration in the second preset DC current parameter is 4000 milliseconds;
[0125] The steps for controlling the electroplating filling equipment to output DC current with preset DC current parameters include:
[0126] In response to being in the third sub-electroplating cycle, the electroplating filling equipment is controlled to output DC current with a first preset DC current parameter;
[0127] In response to being in the fourth sub-electroplating cycle, the electroplating filling equipment is controlled to output DC current with the second preset DC current parameter.
[0128] In this embodiment, during the second-stage electroplating, using a DC current in the same direction provides a stable electric field, allowing the additive to form a stable and balanced adsorption layer on the cathode surface of the substrate. Under DC current, the stable gradient of additives and metal ions between the orifice and bottom of the area to be filled is maintained, thus driving the filling process to smoothly proceed from the bottom of the area to be filled towards the orifice, resulting in no voids in the vias after the second-stage electroplating. Furthermore, the periodic DC current can locally disturb and refresh the adsorption layer, preventing excessive adsorption or deactivation of inhibitor molecules on the surface, which is beneficial for the smooth sealing of the orifice in the area to be filled. The first and second preset DC current parameters not only allow for better deposition of metal ions in the second electroplating solution to accelerate the electroplating filling efficiency, but also better drive the filling process to smoothly proceed from the bottom of the area to be filled towards the orifice, resulting in a smoother sealing of the orifice in the area to be filled.
[0129] In one embodiment, the filling method further includes:
[0130] Obtain the load voltage within the second electroplating chamber; wherein the load voltage is used to reflect the current density of the cathode region on the substrate;
[0131] In response to the load voltage change being greater than or equal to a preset change threshold within a preset time period, the system determines that the second stage of electroplating has been completed and controls the drive device to transfer the substrate that has completed the second stage of electroplating to the target position.
[0132] In the constant current electroplating mode of the second stage, the load voltage in the second electroplating chamber of the electroplating filling equipment reflects the true polarization state of the substrate surface. Metal ion deposition in the second electroplating solution mainly occurs in the area to be electroplated. The effective surface area of the cathode region on the substrate is relatively stable and small, and the load voltage remains relatively stable or changes slowly. When the area to be filled is completely filled, the thin metal layer at the edge of the aperture in the area to be filled is replaced by the deposited metal filler, resulting in a decrease in the resistance of the area to be filled and an equivalent increase in the deposition surface area. Therefore, the metal deposition area suddenly shifts from the area to be filled and the seed layer of the metal to be plated on the substrate to the entire flat surface, causing a sudden and sharp increase in the effective surface area of the cathode region and the plating thickness on the substrate. In the constant current electroplating mode, the true current density of the cathode region on the substrate drops sharply and instantaneously, resulting in a significant decrease in the cathode potential. Therefore, when the load voltage drops beyond a preset threshold within a short time window, the filling endpoint is determined.
[0133] Figure 4 This is a schematic diagram of a through-hole after the second electroplating stage is completed in an electroplating filling method provided in Embodiment 1 of this disclosure, as shown below. Figure 4As shown, the through-hole is completely filled. At this point, the actual current density in the cathode region of the substrate drops sharply and the cathode potential decreases significantly. It will then be detected that the load voltage drops beyond a preset threshold within the current time window. At this point, the drive device can be controlled to transfer the substrate, which has completed the second stage of electroplating, to the target location.
[0134] In this embodiment, by real-time monitoring of the load voltage within the second electroplating chamber, the completion of the second electroplating stage can be determined more accurately. Furthermore, by controlling the drive device, the substrate that has completed the second electroplating stage is transferred to the target position. This not only avoids the misalignment or tilting that can easily occur when manually placing the substrate, but also prevents grease contamination and accidental physical damage to the substrate caused by human contact. In addition, the transfer speed of the drive device is greater than that of manual transfer, which significantly shortens the electroplating filling time and thus improves the efficiency of electroplating filling.
[0135] Example 2
[0136] Corresponding to the aforementioned embodiment 1 of the electroplating filling method, this disclosure also provides embodiment 2 of the electroplating filling equipment. Figure 5 This is a schematic diagram of an electroplating filling apparatus according to Embodiment 1 of this disclosure. The electroplating filling apparatus is used to electroplat and fill at least one through-hole on a substrate; the electroplating filling apparatus includes two independent first electroplating chambers and a second electroplating chamber; the first electroplating chamber is used to store a first electroplating solution; the second electroplating chamber is used to store a second electroplating solution; the electroplating filling apparatus 50 includes:
[0137] The response module 51, in response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, places the substrate in the first electroplating chamber for first-stage electroplating, so as to form a bridge-shaped structure at a preset position in the through hole by the first electroplating solution; wherein, the bridge-shaped structure is used to form two areas to be electroplated in the through hole.
[0138] The transfer module 52 is used to transfer the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, so as to electroplat and fill the area to be electroplated in the through hole with the second electroplating solution.
[0139] In one embodiment, the preset area is the middle area along the axial direction of the through hole;
[0140] And / or,
[0141] The two areas to be electroplated in the through hole are symmetrical;
[0142] And / or,
[0143] The ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution.
[0144] In one embodiment, the electroplating filling device includes a driving device; the response module 51 is further configured to control the driving device to place the substrate in the corresponding position in the first electroplating chamber in response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, so as to perform the first stage of electroplating.
[0145] And / or,
[0146] The transfer module 52 is also used to control the drive device to transfer the substrate after the first stage of electroplating to the corresponding position in the second electroplating chamber for the second stage of electroplating.
[0147] In one embodiment, the electroplating filling apparatus includes:
[0148] The control module is used to control the drive device to flush the through holes after the first stage of electroplating in order to remove the first electroplating solution remaining on the substrate.
[0149] In one embodiment, the control module is further configured to control the electroplating filling equipment to output a pulse current with preset pulse current parameters, so that the metal ions in the first electroplating solution are deposited into a bridge-like structure under the action of the pulse current.
[0150] And / or,
[0151] The control module is also used to control the electroplating filling equipment to output a DC current with preset DC current parameters, so that the metal ions in the second electroplating solution form a metal filler under the action of the DC current; wherein the metal filler is used to electroplat the area to be electroplated.
[0152] In one embodiment, the first stage of electroplating includes at least one first electroplating cycle; the first electroplating cycle includes a first sub-electroplating cycle and a second sub-electroplating cycle; the preset pulse current parameters include a first preset pulse current parameter and a second preset pulse current parameter.
[0153] The current density range in the first preset pulse current parameter falls between 2 amperes / dm² and 5 amperes / dm²; and / or, the current duration in the first preset pulse current parameter falls between 150 milliseconds and 300 milliseconds.
[0154] The current density range in the second preset pulse current parameter falls between -3 amperes / dm² and 8 amperes / dm²; and / or, the current duration in the second preset pulse current parameter falls between 10 milliseconds and 50 milliseconds.
[0155] The response module 51 also responds to being in the first sub-electroplating cycle by controlling the electroplating filling equipment to output a pulse current with a first preset pulse current parameter.
[0156] The response module 51 also responds to being in the second sub-electroplating cycle by controlling the electroplating filling equipment to output a pulse current with a second preset pulse current parameter.
[0157] In one embodiment, the second-stage electroplating includes at least one second electroplating cycle; the second electroplating cycle includes a third sub-electroplating cycle and a fourth sub-electroplating cycle; the preset DC current parameters include a first preset DC current parameter and a second preset DC current parameter.
[0158] The current density range in the first preset DC current parameter falls between 0.04 amperes / dm² and 0.08 amperes / dm²; and / or, the current duration in the first preset DC current parameter is 4000 milliseconds;
[0159] The current density range in the second preset DC current parameter falls between 0.1 amperes / dm² and 0.22 amperes / dm²; and / or, the current duration in the second preset DC current parameter is 4000 milliseconds;
[0160] The response module 51 also responds to the third sub-electroplating cycle by controlling the electroplating filling equipment to output a DC current with a first preset DC current parameter.
[0161] The response module 51 also responds to the fourth sub-electroplating cycle by controlling the electroplating filling equipment to output a DC current with a second preset DC current parameter.
[0162] In one embodiment, the electroplating filling apparatus further includes:
[0163] The acquisition module is used to acquire the load voltage inside the second electroplating chamber; wherein the load voltage is used to reflect the current density of the cathode region on the substrate.
[0164] The response module 51 also responds to the fact that the change in load voltage within a preset time is greater than or equal to a preset change threshold, determines that the second stage of electroplating has been completed, and controls the drive device to transfer the substrate that has completed the second stage of electroplating to the target position.
[0165] For the device embodiments, since they basically correspond to the method embodiments, the relevant parts can be referred to in the description of the method embodiments. The device embodiments described above are merely illustrative, and the units described as separate components may or may not be physically separate. The components as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this disclosure according to actual needs.
[0166] Example 3
[0167] Embodiment 3 of this disclosure also provides a semiconductor product, which includes a substrate; the substrate has at least one through hole with a depth-to-width ratio greater than or equal to a preset ratio; wherein the through hole is electroplated and filled based on the electroplating filling method in Embodiment 1.
[0168] In this embodiment, since there are no voids in the through-hole filled by the electroplating filling method in Embodiment 1, the semiconductor product can achieve better vertical electrical connection based on the through-hole.
[0169] While specific embodiments of this disclosure have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of this disclosure is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of this disclosure, but all such changes and modifications fall within the scope of protection of this disclosure.
Claims
1. A method for electroplating filling, characterized in that, The electroplating filling method is used to electroplat and fill at least one through hole on a substrate; the electroplating filling method is applied to an electroplating filling device; the electroplating filling device includes two independent first electroplating chambers and second electroplating chambers; the first electroplating chamber is used to store a first electroplating solution; The second electroplating chamber is used to store the second electroplating solution; The electroplating filling method includes: In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the substrate is placed in the first electroplating chamber for a first-stage electroplating process, so as to form a bridge-like structure in a preset area within the through hole using the first electroplating solution; wherein, the bridge-like structure is used to form two areas to be electroplated within the through hole. The substrate after the first stage of electroplating is transferred to the second electroplating chamber for the second stage of electroplating, so as to electroplat and fill the area to be electroplated in the through hole with the second electroplating solution. Wherein, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution; and the copper ion concentration in the first electroplating solution is greater than the copper ion concentration in the second electroplating solution, and the reagent concentration in the first electroplating solution is less than the reagent concentration in the second electroplating solution; the reagent includes inhibitors and / or leveling agents.
2. The electroplating filling method as described in claim 1, characterized in that, The preset area is the middle area along the axial direction of the through hole; And / or, The two areas to be electroplated in the through hole are symmetrical.
3. The electroplating filling method as described in claim 1, characterized in that, The electroplating filling equipment includes a drive device; The step of placing the substrate in the first electroplating chamber for first-stage electroplating in response to a ratio between the depth and width of the through hole being greater than or equal to a preset ratio includes: In response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, the driving device is controlled to place the substrate in the corresponding position within the first electroplating chamber for the first stage of electroplating. And / or, The step of transferring the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating includes: The drive device is controlled to transfer the substrate after the first stage of electroplating to the corresponding position in the second electroplating chamber for the second stage of electroplating.
4. The electroplating filling method as described in claim 3, characterized in that, Before the step of transferring the through-hole after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, the following steps are included: The drive device is controlled to flush the through holes after the first stage of electroplating to remove the first electroplating solution remaining on the substrate.
5. The electroplating filling method as described in claim 1, characterized in that, The step of forming a bridge-like structure in the predetermined area within the through hole using the first electroplating solution includes: The electroplating filling equipment is controlled to output a pulse current with preset pulse current parameters, so that the metal ions in the first electroplating solution are deposited into the bridge-shaped structure under the action of the pulse current. And / or, The step of electroplating the area to be electroplated within the through hole using the second electroplating solution includes: The electroplating filling equipment is controlled to output a DC current with preset DC current parameters so that the metal ions in the second electroplating solution form a metal filler under the action of the DC current; wherein the metal filler is used to electroplat the area to be electroplated.
6. The electroplating filling method as described in claim 5, characterized in that, The first stage of electroplating includes at least one first electroplating cycle; the first electroplating cycle includes a first sub-electroplating cycle and a second sub-electroplating cycle; the preset pulse current parameters include a first preset pulse current parameter and a second preset pulse current parameter. The current density range in the first preset pulse current parameter falls between 2 amperes / dm² and 5 amperes / dm²; and / or, the current duration in the first preset pulse current parameter falls between 150 milliseconds and 300 milliseconds. The current density range in the second preset pulse current parameter falls between -3 amperes / dm² and 8 amperes / dm²; and / or, the current duration in the second preset pulse current parameter falls between 10 milliseconds and 50 milliseconds. The step of controlling the electroplating filling equipment to output a pulse current with preset pulse current parameters, so that metal ions in the first electroplating solution are deposited into the bridge-like structure under the action of the pulse current, includes: In response to being in the first sub-electroplating cycle, the electroplating filling device is controlled to output a pulse current with the first preset pulse current parameter; In response to being in the second sub-electroplating cycle, the electroplating filling device is controlled to output a pulse current with the second preset pulse current parameter.
7. The electroplating filling method as described in claim 5, characterized in that, The second stage of electroplating includes at least one second electroplating cycle; the second electroplating cycle includes a third sub-electroplating cycle and a fourth sub-electroplating cycle; the preset DC current parameters include a first preset DC current parameter and a second preset DC current parameter. The current density range in the first preset DC current parameter falls between 0.04 amperes / dm² and 0.08 amperes / dm²; and / or, the current duration in the first preset DC current parameter is 4000 milliseconds; The current density range in the second preset DC current parameter falls between 0.1 ampere / dm² and 0.22 ampere / dm²; and / or, the current duration in the second preset DC current parameter is 4000 milliseconds; The step of controlling the electroplating filling equipment to output DC current with preset DC current parameters includes: In response to being in the third sub-electroplating cycle, the electroplating filling equipment is controlled to output a DC current with a first preset DC current parameter; In response to being in the fourth sub-electroplating cycle, the electroplating filling equipment is controlled to output a DC current with a second preset DC current parameter.
8. The electroplating filling method as described in claim 3, characterized in that, The electroplating filling method further includes: Obtain the load voltage within the second electroplating chamber; wherein the load voltage is used to reflect the current density of the cathode region on the substrate; In response to the load voltage change being greater than or equal to a preset change threshold within a preset time period, the second stage of electroplating is determined to be completed, and the driving device is controlled to transfer the substrate that has completed the second stage of electroplating to the target position.
9. An electroplating filling device, characterized in that, The electroplating filling equipment is used to electroplat and fill at least one through hole on a substrate; the electroplating filling equipment includes two independent first electroplating chambers and second electroplating chambers; the first electroplating chamber is used to store a first electroplating solution; The second electroplating chamber is used to store the second electroplating solution; The electroplating filling equipment includes: The response module, in response to the ratio between the depth and width of the through hole being greater than or equal to a preset ratio, places the substrate in the first electroplating chamber for first-stage electroplating, so as to form a bridge-like structure at a preset position in the through hole by the first electroplating solution; wherein, the bridge-like structure is used to form two areas to be electroplated in the through hole. The transfer module is used to transfer the substrate after the first stage of electroplating to the second electroplating chamber for the second stage of electroplating, so as to electroplat the area to be electroplated in the through hole by the second electroplating solution. Wherein, the ratio of reagent concentration and / or ion concentration in the first electroplating solution is not exactly the same as the ratio of reagent concentration and / or ion concentration in the second electroplating solution; and the copper ion concentration in the first electroplating solution is greater than the copper ion concentration in the second electroplating solution, while the reagent concentration in the first electroplating solution is less than the reagent concentration in the second electroplating solution.
10. A semiconductor product, characterized in that, The semiconductor product includes a substrate; the substrate has at least one through-hole whose depth-to-width ratio is greater than or equal to a preset ratio. The through-hole is electroplated and filled according to the electroplating filling method as described in any one of claims 1 to 8.