Gas mixing device and thin film deposition apparatus
By designing the transition section and independent pipeline structure of the gas mixing device in PEALD technology, the problem of insulation failure caused by the continuous film on the inner wall of the ceramic tube was solved, the cleaning cycle was extended, and production efficiency and part life were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU MICROVIA NANO EQUIP TECH CO LTD
- Filing Date
- 2024-12-30
- Publication Date
- 2026-06-30
AI Technical Summary
In existing PEALD technology, the formation of a continuous film on the inner wall of the ceramic tube leads to insulation failure, requiring frequent cleaning, which affects production efficiency and component lifespan.
A gas mixing device is designed to prevent the formation of a continuous film of gas on the inner wall of the mixing chamber by setting up an independent transition section and an air inlet pipeline. Separate cleaning pipelines and control valves are used to control the gas flow and extend the cleaning cycle.
This effectively avoids insulation failure on the inner wall of the ceramic tube, extends the cleaning cycle, and improves the service life of parts and production efficiency.
Smart Images
Figure CN122303838A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of atomic layer deposition, and in particular to a gas mixing device and a method for controlling the gas mixing device. Background Technology
[0002] Plasma-enhanced atomic layer deposition (PEALD) is a technique that combines plasma enhancement technology with atomic layer deposition. By introducing highly active plasma, PEALD lowers the deposition temperature, improves film quality, increases deposition rate, expands the types of films that can be deposited, and also cleans the reaction chamber.
[0003] In existing technologies, the fabrication of TiN films using PEALD technology requires an inlet, a ceramic tube, and a spray head. As the process progresses, a continuous thin film gradually forms on the inner wall of the ceramic tube. When this film reaches a certain thickness (400-500 nm), it can cause the insulating ends of the ceramic tube to become conductive, thereby connecting the metal inlet block and the spray head, leading to radio frequency and process anomalies. Therefore, frequent in-situ cleaning of the ceramic tube's inner wall with F / Cl gas is necessary. This method results in reduced production efficiency and impacts component lifespan. Summary of the Invention
[0004] Embodiments of this application provide a gas mixing device, comprising:
[0005] An air intake component, wherein the air intake component forms at least two air intake pipes;
[0006] A mixing component includes a mixing section and a transition section, wherein the transition section is disposed on the side closer to the air intake component, and the mixing section is disposed on the side farther away from the air intake component;
[0007] The transition section is provided with a gas pipeline that matches the intake pipeline and is independently set up, so that the gas in the intake pipeline enters the mixing section through the gas pipeline and is mixed.
[0008] In some embodiments, the mixing section and the transition section are separate components.
[0009] In some embodiments, the gas pipelines are arranged in parallel.
[0010] In some embodiments, the length of the gas pipeline is not less than a preset threshold.
[0011] In some embodiments, the air intake component is further provided with a first cleaning line, and the transition portion is provided with a second cleaning line that matches the first cleaning line.
[0012] In some embodiments, the transition section has at least two second cleaning lines, and the second cleaning lines are symmetrically arranged between each other.
[0013] In some embodiments, the intake pipe is provided with a first gas source and a second gas source, and the first gas source and the second gas source are connected to the gas channel through a switching device.
[0014] In some embodiments, the switching element is connected to a gas processing device; when the first gas source is introduced into the mixing section, the gas processing device receives the second gas source.
[0015] In some embodiments, the switching element includes a first control valve, a second control valve, a third control valve, and a fourth control valve. The first control valve is disposed between the first gas source and the gas pipeline, the second control valve is disposed between the first gas source and the gas processing device, the third control valve is disposed between the second gas source and the gas processing device, and the fourth control valve is disposed between the second gas source and the gas pipeline.
[0016] On the other hand, this application also provides a thin film deposition apparatus, including the gas mixing device described in any of the above claims.
[0017] The gas mixing device provided in this application separates the first and second air passages by setting a transition section, so that the film is only generated in the gas mixing chamber. This avoids the problem of continuous film formation on the inner wall of the gas mixing device causing the upper and lower ends to fail to conduct and insulate, increases the cleaning cycle, and improves the service life of the parts. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the structure of a gas mixing device according to an embodiment of this application;
[0020] Figure 2 yes Figure 1 A cross-sectional schematic diagram of the gas mixing device at point AA in the embodiment;
[0021] Figure 3 yes Figure 1 Schematic diagram of the air mixing device with an air intake section in the embodiment;
[0022] Figure 4 yes Figure 3 Schematic diagram of the air mixing device in BB cross section of the embodiment;
[0023] Figure 5 yes Figure 1A partial schematic diagram of the first ventilation line in the embodiment;
[0024] Figure 6 yes Figure 1 A partial schematic diagram of the second venting line in the embodiment;
[0025] Figure 7 This is a schematic diagram of a control method for a gas mixing device according to an embodiment of this application;
[0026] 10 Mixing section, 100 Mixing chamber, 20 Transition section, 200 First pipeline, 201 Second pipeline, 202 Second cleaning pipeline, 203 Gas pipeline, 30 Inlet component, 300 First inlet pipeline, 3000 First gas source passage, 3000a First gas source, 401 First control valve, 402 Second control valve, 3001 Second gas source passage, 3001a Second gas source, 403 Third control valve, 404 Fourth control valve, 3002 First outlet... Air passage, 3003 first air inlet passage, 301 second air inlet pipeline, 3010 third air source passage, 3010a third air source, 405 fifth control valve, 406 sixth control valve, 3011 fourth air source passage, 3011a fourth air source, 407 seventh control valve, 408 eighth control valve, 3012 second air outlet passage, 3013 second air inlet passage, 40 control valve, 50 air inlet section, 500 first cleaning pipeline, 60 gas processing device. Detailed Implementation
[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0028] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.
[0029] The terms "first," "second," and "third" used in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this invention, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movement of components in a specific posture (as shown in the figures). If the specific posture changes, the directional indication will also change accordingly. The terms "comprising" and "having," and any variations thereof, in the embodiments of this application are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or components inherent to these processes, methods, products, or devices.
[0030] In this document, the reference to "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0031] In existing technologies, when manufacturing TiN films using PEALD technology, an inlet device, a ceramic tube, and a spray head are required. As the process progresses, a continuous thin film gradually forms on the inner wall of the ceramic tube due to the reaction source. When it reaches a certain thickness (400-500 nm), the top and bottom ends of the insulating ceramic tube become conductive, which in turn conducts through the metal inlet block and the spray head, causing radio frequency and process abnormalities. Therefore, it is necessary to frequently clean the inner wall of the ceramic tube in situ using F / Cl gas. This method leads to reduced production efficiency and affects the lifespan of the components.
[0032] The purpose of this application is to overcome the defects and deficiencies in the prior art and provide a gas mixing device. This gas mixing device aims to solve the problems that the reaction source gradually forms a continuous film on the inner wall of the ceramic tube, which causes radio frequency and process abnormalities. It requires frequent in-situ cleaning of the inner wall of the ceramic tube with F / Cl gas, which leads to low production efficiency and affects the life of parts.
[0033] like Figure 1 and Figure 2 As shown, Figure 1This is a schematic diagram of the structure of a gas mixing device according to an embodiment of this application. Figure 2 yes Figure 1 A cross-sectional view of the gas mixing device at point AA in the embodiment. The gas mixing device includes: a gas mixing section 10, a transition section 20, and an air inlet 30; wherein, the gas mixing section 10 includes a gas mixing chamber 100, which is connected to the spray section to be prepared (not shown in the figure); the transition section 20 is located on the side of the gas mixing section 10 away from the gas mixing chamber 100, and a gas pipeline 203 is provided in the transition section 20. The gas pipeline 203 includes a first pipeline 200 and a second pipeline 201, which are connected to the gas mixing chamber 100. The first pipeline 200 and the second pipeline 201 are independently arranged. In some embodiments, the first pipeline 200 and the second pipeline 201 are arranged vertically parallel to each other, which can prevent gas backflow. Meanwhile, depending on the process, the flow rate and velocity of the gas introduced into the intake pipe 203 will also be different. Therefore, a preset threshold for the length of the gas pipe 203 can be determined according to the actual situation. Even if there is backflow diffusion in the gas pipe 203, leaving enough length of the gas pipe 203 can ensure that there is no vertical conduction.
[0034] like Figure 1 and Figure 2 As shown, the air intake component 30 has at least two air intake pipes. In this embodiment, the air intake component 30 includes a first air intake pipe 300 and a second air intake pipe 301. The first air intake pipe 300 is connected to the first pipe 200, and the second air intake pipe 301 is connected to the second pipe 201. The first air intake pipe 300 and the second air intake pipe 301 introduce gas into the mixing chamber 100 through the transition portion 20. In some embodiments, a reactant gas and a carrier gas are introduced into the first air intake pipe 300 and the second air intake pipe 301. The reactant gas may be, but is not limited to, TDMAT or NH3, and the carrier gas may be, but is not limited to, one or more of N2, Ar, He, etc. The carrier gas is introduced to assist in the transport of the reactant gas. The first pipe 200 and the second pipe 201 are channels that pass through the transition portion 20, and the pipe dimensions of the first pipe 200 and the second pipe 201 and the first air intake pipe 300 and the second air intake pipe 301 are... The matching is performed so that the gas from the first intake pipe 300 and the second intake pipe 301 will not leak when it enters the mixing chamber 100. In some embodiments, a second cleaning pipe 202 is also provided on the transition section 20. The second cleaning pipe 202 is independent of the first pipe 200 and the second pipe 201. The first pipe 200 and the second pipe 201 are located at the center of the transition section 20. There are multiple second cleaning pipes 202, which are located next to the first pipe 200 and the second pipe 201.
[0035] The gas mixing device provided in this application separates the first air inlet pipe 300 and the second air inlet pipe 301 by setting a transition section 20, so that the film is only generated inside the gas mixing chamber 100. This avoids the problem of continuous film formation on the inner wall of the gas mixing device causing the upper and lower ends to fail to conduct and insulate, increases the cleaning cycle, and improves the service life of the parts.
[0036] like Figure 3 As shown, Figure 3 yes Figure 1 A schematic diagram of the air mixing device with an air intake section is shown in the embodiment. The air mixing device further includes an air intake section 50, which is located on the side of the transition section 20 away from the air mixing section 10. A first air intake pipe 300 and a second air intake pipe 301 are partially disposed within the air intake section 50 and communicate with the first pipe 200 and the second pipe 201 in the transition section 20 by passing through the air intake section 50. In some embodiments, the air intake section 50 and the transition section 20 are in close contact, and openings for the first air intake pipe 300 and the second air intake pipe 301 are pre-set within the air intake section 50, thereby embedding the first air intake pipe 300 and the second air intake pipe 301 within the air intake block.
[0037] like Figure 4 As shown, Figure 4 yes Figure 3 The embodiment of the air mixing device is shown in the cross-sectional view of BB. A first cleaning pipe 500 is provided in the air intake section 50. The first cleaning pipe 500 is connected to the first pipe 200 and the second pipe 201. The first cleaning pipe 500 avoids overlapping with the first air intake pipe 300 and the second air intake pipe 301. In some embodiments, the first cleaning pipeline 500 is connected to the second cleaning pipeline 202, the first pipeline 200, and the second pipeline 201, and the number of the first cleaning pipelines 500 corresponds to the number of the second cleaning pipelines 202. The projected area of the first cleaning pipeline 500 covers the projected area of the second cleaning pipeline 202, the first pipeline 200, and the second pipeline 201, so that the gas in the first cleaning pipeline 500 can enter the mixing chamber 100 through the second cleaning pipeline 202, the first pipeline 200, and the second pipeline 201. An inert gas and a cleaning gas are introduced into the first cleaning pipeline 500. The inert gas can be, but is not limited to, N2, Ar, etc., and the cleaning gas can be dissociated gases such as Ar, NF3, etc. The inert gas is used to assist in the transport of the reaction gas, and the cleaning gas is used to clean the residual reaction gas in the first pipeline 200, the second pipeline 201, and the mixing chamber 100, thereby avoiding the formation of a continuous film.
[0038] like Figure 5 As shown, Figure 5 yes Figure 1A partial schematic diagram of the first ventilation pipeline in the embodiment shows that, in order to increase the diversity of the introduced gas, the first inlet pipeline 300 is provided with a first gas source passage 3000, a second gas source passage 3001, a first outlet passage 3002, a first inlet passage 3003, and a control valve 40. One end of the first gas source passage 3000 and the second gas source passage 3001 converges at the first outlet passage 3002, and the other end converges at the first inlet passage 3003. The first inlet passage 3003 is connected to the first pipeline 200, and the first outlet passage 3002 is connected to the gas processing device 60. The control valve 40 is located on the first gas source passage 3000 and the second gas source passage 3001.
[0039] like Figure 5 As shown, the first air source passage 3000 is provided with a first air source 3000a, a first control valve 401 and a second control valve 402. The first control valve 401 is located between the first air source 3000a and the first air outlet passage 3002, and the second control valve 402 is located between the first air source 3000a and the first air inlet passage 3003. The second air source passage 3001 is provided with a second air source 3001a, a third control valve 403 and a fourth control valve 404. The third control valve 403 is located between the second air source 3001a and the first air outlet passage 3002, and the fourth control valve 404 is located between the second air source 3001a and the first air inlet passage 3003. In some embodiments, a first gas source 3000a supplies TDMAT reaction gas, and a second gas source 3001a supplies carrier gas. When the first control valve 401 is open and the second control valve 402 is closed, the TDMAT reaction gas is introduced into the mixing chamber 100; otherwise, it is introduced into the gas processing device 60. When the fourth control valve 404 is open and the third control valve 403 is closed, the carrier gas is introduced into the mixing chamber 100; otherwise, it is introduced into the gas processing device 60. The gas processing device 60 is provided so that when the reaction gas does not enter the mixing chamber 100, the carrier gas enters the mixing chamber 100, and the first gas source 3000a supplying the reaction gas cannot be closed. Otherwise, it may easily cause gas stagnation or the MFC to fail to respond in time, resulting in unstable chamber pressure or particulate interference. Therefore, the reaction gas is introduced into the gas processing device 60 for processing.
[0040] like Figure 6 As shown, Figure 6 yes Figure 1A partial schematic diagram of the second ventilation pipeline in the embodiment shows that the second air inlet pipeline 301 is provided with a third air source passage 3010, a fourth air source passage 3011, a second air outlet passage 3012, a second air inlet passage 3013, and a control valve 40. One end of the third air source passage 3010 and the fourth air source passage 3011 converges into the second air outlet passage 3012, and the other end converges into the second air inlet passage 3013. The second air inlet passage 3013 is connected to the second pipeline 201. The second air outlet passage 3012 is connected to the gas processing device 60. The control valve 40 is located on the third air source passage 3010 and the fourth air source passage 3011.
[0041] like Figure 6 As shown, the third air source passage 3010 is provided with a third air source 3010a, a fifth control valve 405 and a sixth control valve 406. The fifth control valve 405 is located between the third air source 3010a and the second air outlet passage 3012, and the sixth control valve 406 is located between the third air source 3010a and the second air inlet passage 3013. The fourth air source passage 3011 is provided with a fourth air source 3011a, a seventh control valve 407 and an eighth control valve 408. The seventh control valve 407 is located between the fourth air source 3011a and the second air outlet passage 3012, and the eighth control valve 408 is located between the fourth air source 3011a and the second air inlet passage 3013. In some embodiments, the third gas source introduces NH3 reaction gas and the fourth gas source 3011a introduces carrier gas. When the sixth control valve 406 is open and the fifth control valve 405 is closed, the NH3 reaction gas is introduced into the mixing chamber 100, and vice versa. When the eighth control valve 408 is open and the seventh control valve 407 is closed, the carrier gas is introduced into the mixing chamber 100, and vice versa.
[0042] like Figure 7 As shown, Figure 7 This is a schematic diagram of a control method for a gas mixing device according to an embodiment of this application. This application also provides a control method for a gas mixing device, including:
[0043] S401: Inject the first gas source 3000a into the gas mixing chamber 100, and the surface of the workpiece to be prepared adsorbs the first gas source 3000a.
[0044] S402: The surface of the workpiece to be prepared is purged to remove excess first gas source 3000a;
[0045] S403: Inject the third gas source 3010a into the gas mixing chamber 100 so that it reacts with the first gas source 3000a adsorbed on the surface of the workpiece to be prepared.
[0046] S404: Purging the surface of the workpiece to remove byproducts and other gases;
[0047] Repeat steps S401-S404 until the target thickness is achieved.
[0048] In some embodiments, the first gas source 3000a may be, but is not limited to, TDMAT reaction gas, the workpiece to be prepared may be, but is not limited to, a wafer, and the third gas source 3010a may be, but is not limited to, NH3.
[0049] When S401 is executed, the first control valve 401 is closed, the second control valve 402 is opened, the third control valve 403 is opened, the fourth control valve 404 is closed, the fifth control valve 405 is opened, the sixth control valve 406 is closed, the seventh control valve 407 is closed, and the eighth control valve 408 is opened.
[0050] When S402 is executed, the first control valve 401 is opened, the second control valve 402 is closed; the third control valve 403 is closed, the fourth control valve 404 is opened; the fifth control valve 405 is opened, the sixth control valve 406 is closed; the seventh control valve 407 is closed, and the eighth control valve 408 is opened.
[0051] When S403 is executed, the first control valve 401 is opened, the second control valve 402 is closed; the third control valve 403 is closed, the fourth control valve 404 is opened; the fifth control valve 405 is closed, the sixth control valve 406 is opened; the seventh control valve 407 is opened, and the eighth control valve 408 is closed.
[0052] When S404 is executed, the first control valve 401 is opened, the second control valve 402 is closed; the third control valve 403 is closed, the fourth control valve 404 is opened; the fifth control valve 405 is opened, the sixth control valve 406 is closed; the seventh control valve 407 is closed, and the eighth control valve 408 is opened.
[0053] Meanwhile, inert gas is introduced into the first cleaning pipeline 500 during steps 1-4, and cleaning gas is introduced when the target thickness is formed.
[0054] The control method of the gas mixing device provided in this application, by finely dividing the control valves in different steps, continuously maintains the flow of gas in the gas mixing chamber while orderly processing of the workpiece to be prepared, thereby extending the cleaning cycle from the original in-situ cleaning once every continuous film thickness of about 400 nm to once every 3 μm or more.
[0055] Another embodiment of this application provides a thin film deposition apparatus, including a chamber cover and a reaction chamber. The chamber cover is fixedly disposed at the top of the reaction chamber, and a gas mixing device is fixed on the chamber cover. In this way, gas input from the gas inlet pipe can enter the reaction chamber through the gas mixing device to realize the deposition process.
[0056] The above description is only a part of the embodiments of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or direct or indirect application in other related technical fields, are similarly included in the patent protection scope of this application.
Claims
1. A gas mixing device, characterized by, include: An air intake component, wherein the air intake component forms at least two air intake pipes; A mixing component includes a mixing section and a transition section, wherein the transition section is disposed on the side closer to the air intake component, and the mixing section is disposed on the side farther away from the air intake component; The transition section is provided with a gas pipeline that matches the intake pipeline and is independently set up, so that the gas in the intake pipeline enters the mixing section through the gas pipeline and is mixed.
2. The gas mixing device of claim 1, wherein The mixing section and the transition section are separate components.
3. The gas mixing device of claim 1, wherein The gas pipelines are arranged in parallel.
4. The gas mixing device of claim 1, wherein The length of the gas pipeline is not less than a preset threshold.
5. The gas mixing device of claim 1, wherein The air intake component is also provided with a first cleaning pipe, and the transition part is provided with a second cleaning pipe that matches the first cleaning pipe.
6. The gas mixing device of claim 5, wherein The transition section contains at least two second cleaning pipes, which are symmetrically arranged between each other.
7. The gas mixing device of claim 1, wherein The intake pipe is equipped with a first air source and a second air source, and the first air source and the second air source are connected to the gas channel through a switching device.
8. The gas mixing device of claim 7, wherein The switching element is connected to a gas processing device; when the first gas source is introduced into the mixing section, the gas processing device receives the second gas source.
9. The gas mixing device of claim 7, wherein The switching device includes a first control valve, a second control valve, a third control valve, and a fourth control valve. The first control valve is disposed between the first gas source and the gas pipeline, the second control valve is disposed between the first gas source and the gas processing device, the third control valve is disposed between the second gas source and the gas processing device, and the fourth control valve is disposed between the second gas source and the gas pipeline.
10. A thin film deposition apparatus comprising the gas mixing device according to any one of claims 1-9.