A composition, a thin film and a method for preparing the same, an optoelectronic device, and a display apparatus

Abstract

This application belongs to the field of display technology, and relates to a composition, a thin film and its preparation method, an optoelectronic device, and a display apparatus. The composition comprises quantum dot material, polystyrene, and a solvent. The composition of this application exhibits good stability.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a composition, a thin film and a method for preparing the same, an optoelectronic device and a display apparatus. Background Technology

[0002] The structure of QLED (Quantum Dots Light-Emitting Diode) is similar to that of OLED (Organic Light-Emitting Diode), both consisting of a sandwich structure composed of a hole transport layer, an emissive layer, and an electron transport layer.

[0003] In the process of QLED fabrication, dopants are added to the ink used to prepare the film to improve its hydrophilicity. However, existing dopants can cause the ink to deteriorate in properties and become less stable, and this problem urgently needs to be solved. Summary of the Invention

[0004] Based on this, the present application provides a composition, a thin film and a method for preparing the same, an optoelectronic device and a display device.

[0005] This application provides a composition comprising quantum dot material, polystyrene, and a solvent.

[0006] This application also provides a thin film, the material of which includes quantum dot material and polystyrene, wherein the polystyrene is connected to a first polar group.

[0007] This application also provides a method for preparing a thin film, comprising:

[0008] A composition is provided, the composition comprising a quantum dot material, polystyrene, and a solvent;

[0009] Deposit the composition to form an initial thin film;

[0010] The initial film is subjected to plasma treatment to form a first polar group on the surface of the polystyrene, thereby obtaining the target film.

[0011] This application also provides an optoelectronic device, including an anode, an active layer, and a cathode stacked together;

[0012] The active layer comprises the thin film described above, or is prepared using the thin film preparation method described above.

[0013] This application also provides a display device, including a thin film prepared using the above-described composition, or including the above-described thin film; or including a thin film prepared using the above-described thin film preparation method, or including the above-described optoelectronic device.

[0014] Compared with the prior art, the embodiments of this application have the following main advantages:

[0015] The composition of this application has good stability. Attached Figure Description

[0016] To more clearly illustrate the solution of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a flowchart of an embodiment of a thin film preparation method in this application;

[0018] Figure 2 This is a schematic diagram of the structure of one embodiment of an optoelectronic device in this application;

[0019] Figure 3 This is a schematic diagram of another embodiment of an optoelectronic device in this application.

[0020] Figure label:

[0021] 10 - Anode; 20 - Active layer; 30 - Electron functional layer; 40 - Cathode; 50 - Hole functional layer. Detailed Implementation

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0023] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0024] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0025] This application provides a composition comprising quantum dot material, polystyrene, and a solvent.

[0026] While dopants added to existing compositions can improve the hydrophilicity of the film, they can also lead to decreased ink stability. The polystyrene doped in the compositions of this application avoids deterioration of the composition's properties, maintains its original stability, and effectively improves the hydrophilicity of the film after formation.

[0027] In one embodiment, the polystyrene accounts for 0.9% to 8.5% of the composition by mass. This mass percentage can maintain the properties of the composition unchanged, will not affect the morphology of the film after film formation, and can effectively improve the hydrophilicity of the film after film formation.

[0028] In an optional embodiment, the polystyrene in the composition is a value in the range of any one or any two of the following: 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 8.5%.

[0029] In one embodiment, the mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1). This ratio allows the polystyrene to maintain the stability of the composition and provides sufficient polar groups to improve the hydrophilicity of the film after it is formed.

[0030] In an optional embodiment, the mass ratio of the quantum dot material to the polystyrene is a ratio within the range of any one or any two of the following: (2:1), (3:1), (4:1), (5:1), (6:1), (7:1), (8:1), (9:1), (10:1).

[0031] In one embodiment, the dielectric constant of the solvent is 0 to 4, and solvents within this range are nonpolar. In an alternative embodiment, the dielectric constant of the solvent is a value within the range of any one or any two of 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4, etc.

[0032] In one embodiment, the composition further includes a metal oxide.

[0033] In one embodiment, the mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1). This ratio allows the metal oxide to maintain the stability of the composition and provide effective catalysis during film formation, facilitating the formation of polar groups on the polystyrene surface to improve the hydrophilicity of the film.

[0034] In an optional embodiment, the mass ratio of the polystyrene to the metal oxide is a ratio within the range of any one or any two of the following: (5:1), (6:1), (7:1), (8:1), (9:1), (10:1), etc.

[0035] In one embodiment, the metal oxide is selected from at least one of SnO2, Al2O3, CuO, ZnO, ZnS / ZnO, MgO, ZnMgO, TaO, and NbO.

[0036] In one embodiment, the quantum dot material is an oil-soluble quantum dot, and the quantum dot material is selected from one or more of single-component quantum dots, core-shell structured quantum dots, and inorganic perovskite quantum dots, wherein the core-shell structured quantum dot includes one or more shells;The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, and AlP One or more of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS, SnSe, SnTe, and Pb. One or more of S, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from the group I-III-VI compounds. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The inorganic perovskite quantum dots have the general structural formula QJT3, where J is a divalent metal cation selected from Pb. 2+ Sn 2+ Cu2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl- and Br-. - Or I-, Q is Cs + ; and / or,

[0037] The solvent includes at least one of toluene, xylene, anisole, phenyldecane, 1-methylnaphthalene, 1-allylnaphthalene, trimethylnaphthalene, benzene, cyclohexane, octane, hexane, decane, dodecane, tridecane, tetradecane, pentadecane, bicyclohexane, biphenyl, ethylnaphthalene, 4-butylbiphenyl, cyclohexylbenzene, phenyldecane, pentaphenyl, m-xylene, o-xylene, 2-isopropylnaphthalene, and nonylbenzene.

[0038] In one embodiment, taking a quantum dot composition as an example, the composition in step S11 can be prepared as follows: First, 10-500 mg of polystyrene with a molecular weight of 20,000-100,000 g / mol is dissolved in 1-50 ml of quantum dot composition solvent to obtain a polystyrene solution. Then, 10-500 mg of metal oxide with an average particle size of 5-30 nm is added to the polystyrene solution, and the mixture is magnetically stirred for 0.5-2 h to obtain a polystyrene / metal oxide solution. Finally, 50-1000 mg of quantum dot nanomaterials with an average particle size of 5-15 nm are added to the polystyrene / metal oxide solution, and the mixture is magnetically stirred for 0.5-2 h to obtain the quantum dot composition.

[0039] This embodiment also provides a thin film, the material of which includes quantum dot material and polystyrene, wherein the polystyrene is connected to a first polar group. The connection of the first polar group to the polystyrene can improve the hydrophilicity of the thin film.

[0040] In one embodiment, the first polar group includes at least one of C-N and O=C-N. The first polar group is formed by plasma treatment. The presence of the first polar group increases the hydrophilicity of the film.

[0041] In one embodiment, the mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1). The polystyrene in this embodiment provides sufficient polar groups to improve the hydrophilicity of the film.

[0042] In an optional embodiment, the mass ratio of the quantum dot material to the polystyrene is a ratio within the range of any one or any two of the following: (2:1), (3:1), (4:1), (5:1), (6:1), (7:1), (8:1), (9:1), (10:1).

[0043] In one embodiment, the material of the thin film further includes a metal oxide. The metal oxide itself can adsorb hydroxyl ions to increase; specifically, the metal oxide forms oxygen vacancies under light treatment to adsorb hydroxyl ions from moisture in the air to enhance the hydrophilicity of the film.

[0044] In one embodiment, the polystyrene is attached to a second polar group, optionally including at least a carbonyl group, which is formed by oxidizing the polystyrene surface under light treatment, such as ultraviolet irradiation, using a metal oxide as a catalyst.

[0045] In one embodiment, the mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1). Within this range, the metal oxide can provide effective catalysis, which is beneficial for the formation of polar groups on the polystyrene surface, thereby improving the hydrophilicity of the film.

[0046] In an optional embodiment, the mass ratio of the polystyrene to the metal oxide is a ratio within the range of any one or any two of the following: (5:1), (6:1), (7:1), (8:1), (9:1), (10:1), etc.

[0047] In this embodiment, the specific materials of the metal oxide, the solvent, and the quantum dot material can be referred to the above composition embodiments, and will not be elaborated here.

[0048] This application provides a method for preparing a thin film, such as... Figure 1 As shown, the method for preparing the thin film includes the following steps:

[0049] S11. A composition is provided, the composition comprising quantum dot material, polystyrene and solvent;

[0050] S12. Deposit the composition to form an initial thin film;

[0051] S13. The initial film is subjected to plasma treatment to form a first polar group on the polystyrene surface to obtain the target film; wherein, the plasma treatment is used to form the first polar group on the polystyrene surface.

[0052] In this embodiment, the dielectric constant of the solvent is 0 to 4; solvents within this range are nonpolar. In an optional embodiment, the dielectric constant of the solvent is a value within the range of any one or any two of the following: 0.1, 0.5, 1, 1.5, 2, 2.5, 3, 3.5, 4.

[0053] This application involves doping polystyrene (PS) into a composition using a non-polar solvent, wherein the polystyrene is uniformly dispersed in the non-polar solvent and does not chemically bond with each other or with other materials in the composition.

[0054] When the initial film is subjected to plasma treatment, the surface of the polystyrene is treated to form a first polar group on the surface of the polystyrene. This first polar group gives the initial film a certain degree of hydrophilicity.

[0055] In one embodiment, the first polar group includes a nitrogen-containing polar group, and the working gas used in the plasma treatment includes a nitrogen source gas. In this embodiment, the nitrogen ions generated during the plasma treatment process interact with the surface of polystyrene to form nitrogen-containing polar groups on the polystyrene surface. The introduction of nitrogen-containing polar groups modifies the hydrophobic surface of polystyrene, making it hydrophilic.

[0056] In a specific embodiment, the nitrogen-containing polar group includes at least one of C-N and O=C-N.

[0057] In one embodiment, the polystyrene accounts for 0.9% to 8.5% of the composition by mass. This mass percentage can maintain the properties of the composition unchanged, will not affect the morphology of the film, and can effectively improve the hydrophilicity of the film.

[0058] In an optional embodiment, the polystyrene in the composition is a value in the range of any one or any two of the following: 0.9%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 8.5%.

[0059] In one embodiment, the mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1). This ratio allows the polystyrene to provide sufficient polar groups to improve the hydrophilicity of the film.

[0060] In an optional embodiment, the mass ratio of the quantum dot material to the polystyrene is a ratio within the range of any one or any two of the following: (2:1), (3:1), (4:1), (5:1), (6:1), (7:1), (8:1), (9:1), (10:1).

[0061] In one embodiment, the composition further includes a metal oxide, and the method further includes: phototreating the initial film to form a second polar group on the polystyrene surface.

[0062] In this embodiment, the light treatment is used to form oxygen vacancies in the metal oxide and to form a second polar group on the surface of the polystyrene. Optionally, the second polar group includes at least a carbonyl group.

[0063] The light treatment includes ultraviolet light treatment. In this embodiment, plasma treatment and light treatment can be performed sequentially, or only plasma treatment or only light treatment can be performed.

[0064] When the initial film is phototreated, electron-hole pairs are generated in the initial film. The holes react with the lattice oxygen of the metal oxide to form oxygen vacancies. The oxygen vacancies are kinetically more likely to adsorb hydroxide ions from water (than oxygen adsorption), thus making the initial film hydrophilic. At the same time, under phototreatment, the metal oxide provides photocatalysis for polystyrene, causing partial oxidation of polystyrene and the formation of carbonyl groups on the surface. The carbonyl groups also give the initial film a certain degree of hydrophilicity.

[0065] In this embodiment, plasma treatment and photo-treatment are applied to doped polystyrene and metal oxides to form first polar groups, oxygen vacancies, and second polar groups, giving the prepared film hydrophilicity. When a composition containing a polar solvent is laid on the film, the composition spreads better, which is beneficial for forming other film layers with better morphology. In addition, polystyrene and metal oxides have certain polymer properties and can provide a certain degree of solvent resistance. After the film is formed, the polystyrene forms a network structure that protects the host material (such as quantum dots). When other film layers are prepared on the film, the influence of the solvent in the composition used to prepare other film layers can be reduced, such as reducing the swelling phenomenon of the film when immersed in other film layer compositions. This broadens the selectivity of other film layers to the composition solvent, which is beneficial for device fabrication.

[0066] In one embodiment, the thin film preparation method can be used to prepare a film layer using a non-polar solution composition in a quantum dot optoelectronic device, such as a quantum dot light-emitting layer. In an orthogonal solvent system, the quantum dot composition uses a non-polar solvent. After preparing the quantum dot light-emitting layer by the above method, an electron transport layer using a polar solvent can be prepared on the quantum dot light-emitting layer. Since the hydrophilicity of the quantum dot light-emitting layer is improved, the composition used to prepare the electron transport layer has better spreadability on the quantum dot light-emitting layer, and an electron transport layer with better morphology can be formed, effectively improving the performance of the electron transport layer.

[0067] In other embodiments, the thin film preparation method can also be used to prepare an electron transport layer, that is, the composition used to prepare the electron transport layer uses a non-polar solvent. Similarly, in an orthogonal solvent system, other films using polar solvents can be prepared on the electron transport layer, such as the quantum dot light-emitting layer in an inverted light-emitting device. In this case, the quantum dot composition uses a polar solvent, and a quantum dot light-emitting layer with better morphology can be obtained.

[0068] In one embodiment, the mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1). In this embodiment, while forming a sufficient amount of the first polar group and oxygen vacancies, the photocatalytic ability of the metal oxide can effectively catalyze the oxidation reaction of polystyrene to form the second polar group, thereby improving the hydrophilicity of the film.

[0069] In an optional embodiment, the mass ratio of the polystyrene to the metal oxide is a ratio within the range of any one or any two of the following: (5:1), (6:1), (7:1), (8:1), (9:1), (10:1), etc.

[0070] In one embodiment, the metal oxide is selected from at least one of SnO2, Al2O3, CuO, ZnO, ZnS / ZnO, MgO, ZnMgO, TaO, and NbO.

[0071] In one embodiment, the quantum dot material is an oil-soluble quantum dot, and the quantum dot material is selected from one or more of single-component quantum dots, core-shell structured quantum dots, and inorganic perovskite quantum dots, wherein the core-shell structured quantum dot includes one or more shells;The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, and AlP One or more of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS, SnSe, SnTe, and Pb. One or more of S, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from the group I-III-VI compounds. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The inorganic perovskite quantum dots have the general structural formula QJT3, where J is a divalent metal cation selected from Pb. 2+ Sn 2+ Cu2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl. - ,Br - or I - Q is Cs + .

[0072] In one embodiment, the solvent comprises at least one of toluene, xylene, anisole, phenyldecane, 1-methylnaphthalene, 1-allylnaphthalene, trimethylbenzene, benzene, cyclohexane, octane, hexane, decane, dodecane, tridecane, tetradecane, pentadecane, bicyclohexane, biphenyl, ethylnaphthalene, 4-butylbiphenyl, cyclohexylbenzene, phenyldecane, pentaphenyl, m-xylene, o-xylene, 2-isopropylnaphthalene, and nonylbenzene.

[0073] In one embodiment, in step S12, the composition is deposited on a preset substrate by inkjet printing or spin coating to form a wet film of a certain thickness, such as a quantum dot film of 5-20 nm.

[0074] In the embodiments, inkjet printing or spin coating of the composition is carried out in an inert environment. After printing or spin coating is completed, the formed wet film is vacuum dried for 5 to 20 minutes, and finally conditionally heated at 50 to 120°C for 5 to 10 minutes to obtain the initial film.

[0075] In one embodiment, in step S13, the nitrogen source gas used in the plasma treatment includes at least one of NH3, NO, NO2, N2O, N2O3, N2O4, and N2H4.

[0076] In some embodiments, the working gas for plasma treatment further includes an inert gas, which includes at least one of N2, Ar, He, and Ne; the inert gas and the nitrogen source gas form a mixed gas, and the volume fraction of the nitrogen source gas relative to the mixed gas is 80% to 95%. In this embodiment, the content of the nitrogen source gas can generate sufficient nitrogen ions to act on the surface of polystyrene, generating a sufficient amount of nitrogen-containing polar groups to improve hydrophilicity.

[0077] In an optional embodiment, the volume fraction of the nitrogen source gas relative to the mixed gas is a range between any one or any two of the following: 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 94%, 95%.

[0078] In one embodiment, the flow rate of the nitrogen source gas is 50–300 ml / min.

[0079] In an optional embodiment, the flow rate of the nitrogen source gas is any one or any two of the following: 50 ml / min, 100 ml / min, 150 ml / min, 200 ml / min, 250 ml / min, 300 ml / min, etc.

[0080] In one embodiment, the power of the plasma treatment is 50 to 400 W.

[0081] In an optional embodiment, the power of the plasma treatment is within the range of any one or any two of 50W, 100W, 150W, 200W, 250W, 300W, etc.

[0082] In one embodiment, the plasma treatment time is 0.5 to 5 minutes.

[0083] In an optional embodiment, the plasma treatment time is any one or any two of 0.5 min, 1 min, 2 min, 3 min, 4 min, 5 min, etc.

[0084] Under the plasma treatment conditions described in the above embodiments, sufficient nitrogen ions can be generated to act on the surface of polystyrene, producing a sufficient amount of nitrogen-containing polar groups to improve hydrophilicity.

[0085] In one embodiment, the irradiation power of the ultraviolet light is 10 to 30 W.

[0086] In an optional embodiment, the irradiation power of the ultraviolet light is within the range of any one or any two of 10W, 15W, 20W, 25W, 30W, etc.

[0087] In one embodiment, the irradiation time of the ultraviolet light is 1 to 5 minutes.

[0088] In an optional embodiment, the irradiation time of the ultraviolet light is any one or any two of 1 min, 2 min, 3 min, 4 min, 5 min, etc.

[0089] Under ultraviolet light irradiation conditions as described in the above embodiments, sufficient oxygen vacancies, hydroxyl groups, carbonyl groups, etc., can be generated to improve hydrophilicity.

[0090] The stability of the composition and the improvement of hydrophilicity after film formation are illustrated below through specific examples.

[0091] Composition Example 1

[0092] A composition with a concentration of 15 mg / ml is provided, wherein the quantum dots are core-shell quantum dots CdSe / CdS, the solvent used is the non-polar solvent xylene, and the dopants are 5% polystyrene (PS) and TiO2, with a mass ratio of PS to TiO2 of 5:1, and the composition is left to stand for 30 days.

[0093] Composition Example 2

[0094] Unlike Composition Example 1: the doped material is 5% polystyrene;

[0095] Composition Example 3

[0096] Unlike Composition Example 1: the doped material is 5% TiO2;

[0097] Comparative Example 1

[0098] Unlike Composition Example 1: Undoped polystyrene and TiO2.

[0099] Comparative Example 2

[0100] Unlike Composition Example 1: 5% polystyrene in the doped material is replaced with polyvinyl alcohol (PVA).

[0101] The compositions of Examples 1-3 and Comparative Examples 1-2 were observed and film-forming tests were performed. No obvious precipitation was observed in the compositions of Examples 1-3 and Comparative Example 1. The compositions were printed and vacuum dried for 5 min, and then heated at 100°C for 10 min to obtain a 20 nm quantum dot light-emitting layer. Comparative Example 2 showed obvious precipitation and could not be printed.

[0102] The following example illustrates the effect of the above method on improving the hydrophilicity of the thin film by preparing a quantum dot film and then fabricating an electron transport layer on the quantum dot film.

[0103] Example 1 of Thin Film Preparation Method

[0104] A pre-defined substrate was provided, and a composition with a concentration of 15 mg / ml was printed onto the pre-defined substrate in an N2 glove box environment. The quantum dots were core-shell quantum dots CdSe / CdS, and the solvent used was the non-polar solvent xylene. 5% polystyrene (PS) and TiO2 were doped, with a PS to TiO2 mass ratio of 5:1. After printing, the substrate was vacuum dried for 5 min, and then heated at 100 °C for 10 min to obtain a 20 nm quantum dot light-emitting layer.

[0105] The quantum dot luminescent layer was subjected to plasma treatment using ammonia as the working gas at a flow rate of 100 ml / min, with a plasma treatment power of 100 W and a treatment time of 1 min.

[0106] The quantum dot luminescent layer was subjected to ultraviolet light irradiation with a power of 20W for 2 minutes.

[0107] To illustrate the improvement in hydrophilicity, a 30 mg / mL ZnO solution was further printed on the quantum dot luminescent layer using the polar solvent butanol. After printing, the layer was vacuum dried for 10 min and then heated at 120 °C for 30 min to obtain a 30 nm electron transport layer.

[0108] Example 2 of thin film preparation method

[0109] Unlike Example 1 of the thin film preparation method, TiO2 was replaced with ZnO.

[0110] Example 3 of thin film preparation method

[0111] Unlike Example 1 of the thin film preparation method, TiO2 was replaced with MgO.

[0112] Example 4 of thin film preparation method

[0113] Unlike Example 1 of the thin film preparation method, TiO2 was replaced with a core-shell structured metal oxide ZnS / ZnO.

[0114] Example 5 of thin film preparation method

[0115] Unlike Example 1 of the thin film preparation method, TiO2 is replaced with TaO.

[0116] Example 6 of thin film preparation method

[0117] Unlike Example 1 of the thin film preparation method, TiO2 was replaced with NbO.

[0118] Comparative Example 1 of Thin Film Preparation Methods

[0119] Unlike Example 1 of the thin film preparation method, the composition does not contain polystyrene or TiO2 doping.

[0120] Comparative Example 2 of Thin Film Preparation Methods

[0121] Unlike Example 1 of the thin film preparation method, the quantum dot light-emitting layer was not subjected to plasma treatment.

[0122] Comparative Example 3 of Thin Film Preparation Methods

[0123] Unlike Example 1 of the thin film preparation method, the quantum dot light-emitting layer was not subjected to ultraviolet light irradiation treatment.

[0124] Comparative Example 4 of Thin Film Preparation Methods

[0125] Unlike Example 1 of the thin film preparation method, the quantum dot light-emitting layer was not subjected to plasma treatment, nor was it subjected to ultraviolet light irradiation treatment.

[0126] The thickness and uniformity of the electron transport layer prepared on the quantum dot emitting layer in Examples 1-6 and Comparative Examples 1-4 of the above thin film preparation method were tested. Specifically, after printing the film, 100 nm Ag was evaporated to form a reflective layer. Then, the average thickness of the film layer in a 186 μm × 60 μm pixel was measured using a white light interferometer. The proportion of the intermediate film thickness ± 5 nm in the entire 186 μm × 60 μm pixel was defined as the film uniformity. The test results are shown in Table 1 below:

[0127] Table 1

[0128]

[0129] As can be seen from Table 1 above:

[0130] 1. By comparing the data of Examples 1-6 and Comparative Example 1, the electron transport layer prepared on the quantum dot light-emitting layer in Examples 1-6 has better thickness and uniformity, indicating that the hydrophilicity of the quantum dot light-emitting layer is improved when polystyrene and metal oxide are doped and subjected to plasma treatment and ultraviolet light irradiation.

[0131] 2. By comparing the data of Examples 1-6 and Comparative Examples 2-4, compared with Comparative Example 2 which only underwent plasma treatment, Comparative Example 3 which only underwent ultraviolet light irradiation, and Comparative Example 4 which underwent both plasma treatment and ultraviolet light irradiation, the electron transport layer prepared on the quantum dot light-emitting layer in Examples 1-6 has better thickness and uniformity. This indicates that the hydrophilicity of the quantum dot light-emitting layer is improved when plasma treatment and ultraviolet light irradiation are performed simultaneously.

[0132] 3. Compared with Comparative Example 4, Comparative Examples 2 and 3 showed better thickness and uniformity of the electron transport layer prepared on the quantum dot emitting layer, indicating that the hydrophilicity of the quantum dot emitting layer can be improved to some extent under the conditions of plasma treatment alone and ultraviolet light irradiation alone.

[0133] This application also provides an optoelectronic device, such as... Figure 2 As shown, the optoelectronic device includes an anode 10, an active layer 20, and a cathode 40 stacked together, wherein the active layer 20 includes the thin film described above, or is prepared using the thin film preparation method described above.

[0134] In one embodiment, such as Figure 3 As shown, a hole functional layer 50 is further disposed between the anode 10 and the active layer 20. In this embodiment, the hole functional layer 50 is a hole injection layer and / or a hole transport layer, with the hole injection layer disposed adjacent to the anode 10 and the hole transport layer disposed adjacent to the active layer 20.

[0135] In a specific embodiment, the material of the hole functional layer includes one or more of organic materials, a first inorganic material, and a second inorganic material; the organic material includes poly(3,4-vinyldioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di] [(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N' -Diphenyl-N,N'-Di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N',N'-tetraarylbenzidine, 4,4 The first inorganic material comprises one or more of the following: ',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl]; the first inorganic material comprises one or more of the following: graphene, fullerene, oxides of nickel, oxides of molybdenum, oxides of tungsten, oxides of vanadium, p-type gallium nitride, oxides of chromium, oxides of copper, oxides of hafnium, sulfides of copper, sulfides of molybdenum, and sulfides of tungsten.The second inorganic material comprises one or more doped first compounds. The main compound of the doped first compound includes graphene, fullerene, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped first compound.

[0136] In one embodiment, an electronic functional layer 30 is provided between the cathode 40 and the active layer 20. The electronic functional layer 30 is an electron transport layer and / or an electron injection layer. The electron injection layer is disposed adjacent to the cathode 40, and the electron transport layer is disposed adjacent to the active layer 20.

[0137] In a specific embodiment, the material of the electronic functional layer includes one or more of a third inorganic material and a fourth inorganic material. The third inorganic material includes one or more of an undoped first metal oxide and a group IIB-VIA semiconductor material. The undoped first metal oxide is selected from one or more of ZnO, TiO2, and SnO2, and the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, CdS, CdSe, ZnTe, and CdTe. The fourth inorganic material includes one or more doped second compounds, and the general formula of the doped second compound is A. (1-x) M x O, wherein x is independently greater than 0 and not greater than 0.5 each time it appears, A and M are different, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; optionally, the doped second compound is selected from Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Lix One or more of O.

[0138] In one embodiment, the anode 10 and the cathode 40 are each independently selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fibers; and the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, and AZO. The composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0139] Based on the beneficial effects of the thin film described in the above embodiments, the optoelectronic device of this embodiment can obtain an electron transport layer with better morphology, making the light emission of the optoelectronic device more uniform. In addition, in the optoelectronic device provided in this embodiment, when the electron mobility of the electron transport layer is greater than the hole transport rate of the hole transport layer, the electron mobility of polystyrene and metal oxide is low, which can balance the electrons and holes in the active layer, thereby improving the device efficiency and device lifespan.

[0140] The following example uses a quantum dot light-emitting device, which includes a stacked anode, a hole injection layer, a hole transport layer, a quantum dot active layer, an electron transport layer, and a cathode. The above-mentioned performance advantages of the optoelectronic device are explained by combining multiple embodiments and comparative examples of the prepared quantum dot light-emitting device.

[0141] Quantum dot light-emitting device Example 1

[0142] PEDOT:PSS was printed on an ITO / Ag / ITO substrate, vacuum dried for 5 min after printing, and then heated at 200℃ for 15 min to obtain a 25 nm hole injection layer.

[0143] A TFB anisole solution with a concentration of 8 mg / ml was printed in an N2 glove box environment. After printing, the solution was heated at 200℃ for 15 min to obtain a hole transport layer of 25 nm.

[0144] In an N2 glove box environment, a quantum dot composition with a concentration of 15 mg / ml was printed onto a pre-designed substrate, wherein the quantum dots were CdSe / CdS, the solvent used was the non-polar solvent xylene, and 5% PS and TiO2 were doped with PS to TiO2 in a mass ratio of 5:1. After printing, the substrate was vacuum dried for 5 min, and then heated at 100 °C for 10 min to obtain a 20 nm quantum dot active layer.

[0145] The quantum dot active layer was subjected to plasma treatment. The working gas was ammonia, the ammonia flow rate was 100 ml / min, the plasma treatment power was 100 W, and the treatment time was 1 min.

[0146] The quantum dot active layer was treated with ultraviolet light with an irradiation power of 20W for 2 minutes.

[0147] A 30 mg / mL ZnO solution was printed on the treated quantum dot active layer using the polar solvent butanol. After printing, the layer was vacuum dried for 10 min and then heated at 120 °C for 30 min to obtain a 30 nm electron transport layer.

[0148] Ag was deposited by vapor deposition to obtain a 100nm cathode, which was then packaged to obtain a quantum dot light-emitting device.

[0149] Quantum dot light-emitting device Example 2

[0150] Unlike the quantum dot light-emitting device embodiment 1, TiO2 is replaced with ZnO.

[0151] Quantum dot light-emitting device Example 3

[0152] Unlike Quantum Dot Light Emitting Device Example 1, TiO2 is replaced with MgO.

[0153] Quantum dot light-emitting device Example 4

[0154] Unlike the quantum dot light-emitting device embodiment 1, TiO2 is replaced with ZnS / ZnO.

[0155] Quantum dot light-emitting device Example 5

[0156] Unlike Quantum Dot Light Emitting Device Example 1, TiO2 is replaced with TaO.

[0157] Quantum dot light-emitting device Example 6

[0158] Unlike the quantum dot light-emitting device embodiment 1, TiO2 is replaced with NbO.

[0159] Comparative Example 1 of Quantum Dot Light-Emitting Devices

[0160] Unlike Example 1 of the quantum dot light-emitting device, the quantum dot composition does not contain doping with PS and TiO2.

[0161] Comparative Example 2 of Quantum Dot Light-Emitting Devices

[0162] Unlike Example 1 of the quantum dot light-emitting device, the active layer of the quantum dot was not subjected to plasma treatment.

[0163] Comparative Example 3 of Quantum Dot Light-Emitting Devices

[0164] Unlike Example 1 of the quantum dot light-emitting device, the quantum dot active layer was not subjected to ultraviolet light irradiation treatment.

[0165] Comparative Example 4 of Quantum Dot Light-Emitting Devices

[0166] Unlike Embodiment 1 of the quantum dot light-emitting device, the quantum dot active layer was not subjected to plasma treatment, nor was it subjected to ultraviolet light irradiation treatment.

[0167] The photoelectric performance of the quantum dot light-emitting devices described in Examples 1-6 and Comparative Examples 1-4 was tested. Specifically, the maximum current efficiency (CEmax) was tested using an IV-L testing system, and the T95 lifetime (T95@1000nit) at a luminous intensity of 1000nit was tested using a lifetime testing system. The relevant test data are shown in Table 2 below.

[0168] Table 2

[0169] Quantum dot light-emitting devices Device efficiency (cd / A) Device lifespan (T95@1000nit) Example 1 25.2 cd / A 2195h Example 2 24.8 cd / A 2153h Example 3 25.4 cd / A 2210h Example 4 25.0 cd / A 2185h Example 5 24.9 cd / A 2143h Example 6 25.3 cd / A 2211h Comparative Example 1 16.2 cd / A 1526h Comparative Example 2 19.1 cd / A 1673h Comparative Example 3 18.6 cd / A 1521h Comparative Example 4 16.7 cd / A 1568h

[0170] As can be seen from Table 2 above:

[0171] 1. By comparing the data of Examples 1 to 6 and Comparative Example 1, it can be seen that the efficiency and lifetime of quantum dot light-emitting devices in Examples 1 to 6 are significantly improved when doped with polystyrene and metal oxides and subjected to plasma treatment and ultraviolet light irradiation.

[0172] 2. By comparing the data of Examples 1 to 6 and Comparative Examples 2 to 4, compared with Comparative Example 2 which only underwent plasma treatment, Comparative Example 3 which only underwent ultraviolet light irradiation, and Comparative Example 4 which underwent neither plasma treatment nor ultraviolet light irradiation, the efficiency and lifespan of the quantum dot light-emitting devices in Examples 1 to 6 were significantly improved when both plasma treatment and ultraviolet light irradiation were performed simultaneously.

[0173] 3. Compared with Comparative Example 4, the efficiency and lifespan of the quantum dot light-emitting devices in Comparative Examples 2 and 3 are also improved, indicating that plasma treatment alone and ultraviolet light irradiation alone can also help improve the efficiency and lifespan of quantum dot light-emitting devices.

[0174] This application also provides a display device, the display device comprising a thin film prepared using the above-described composition, or comprising the above-described thin film; or comprising a thin film prepared using the above-described thin film preparation method, or comprising the above-described optoelectronic device.

[0175] The thin film included in the display device in this embodiment, even when prepared using a composition made with a non-polar solvent, still has hydrophilicity. This can improve the morphology and uniformity of other film layers disposed on the thin film, thereby enhancing the luminous uniformity of the display device and improving its efficiency and lifespan.

[0176] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A composition, characterized in that, This includes quantum dot materials, polystyrene, and solvents.

2. The composition according to claim 1, characterized in that, The polystyrene constitutes 0.9% to 8.5% by mass in the composition; and / or, The mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1); and / or, The dielectric constant of the solvent is 0 to 4; and / or, The composition also includes metal oxides.

3. The composition according to claim 2, characterized in that, The mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1); and / or, The metal oxide is selected from at least one of SnO2, Al2O3, CuO, ZnO, ZnS / ZnO, MgO, ZnMgO, TaO, and NbO.

4. The composition according to claim 1, characterized in that, The quantum dot material is an oil-soluble quantum dot, and the quantum dot material is selected from one or more of a single-component quantum dot, a core-shell quantum dot, and an inorganic perovskite quantum dot, the core-shell quantum dot including one or more shells.The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, and AlP One or more of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS, SnSe, SnTe, and Pb. One or more of S, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from the group I-III-VI compounds. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The inorganic perovskite quantum dots have the general structural formula QJT3, where J is a divalent metal cation selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl. - ,Br - or I - Q is Cs + ; and / or, The solvent includes at least one of toluene, xylene, anisole, phenyldecane, 1-methylnaphthalene, 1-allylnaphthalene, trimethylnaphthalene, benzene, cyclohexane, octane, hexane, decane, dodecane, tridecane, tetradecane, pentadecane, bicyclohexane, biphenyl, ethylnaphthalene, 4-butylbiphenyl, cyclohexylbenzene, phenyldecane, pentaphenyl, m-xylene, o-xylene, 2-isopropylnaphthalene, and nonylbenzene.

5. A thin film, characterized in that, The film is made of quantum dot material and polystyrene, wherein the polystyrene is attached with a first polar group.

6. The thin film according to claim 5, characterized in that, The first polar group includes at least one of C-N and O=C-N; and / or, The mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1); and / or, The material of the thin film also includes metal oxides.

7. The thin film according to claim 6, characterized in that, The polystyrene is connected to a second polar group, optionally, the second polar group including at least a carbonyl group; and / or, The metal oxide is adsorbed with hydroxide ions; and / or, The mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1); and / or, The metal oxide is selected from at least one of SnO2, Al2O3, CuO, ZnO, ZnS / ZnO, MgO, ZnMgO, TaO, and NbO.

8. The thin film according to claim 5, characterized in that, The quantum dot material is an oil-soluble quantum dot, and the quantum dot material is selected from one or more of single-component quantum dots, core-shell structure quantum dots, and inorganic perovskite quantum dots, and the core-shell structure quantum dots include one or more shells;The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, and AlP One or more of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS, SnSe, SnTe, and Pb. One or more of S, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from the group I-III-VI compounds. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The inorganic perovskite quantum dots have the general structural formula QJT3, where J is a divalent metal cation selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl. - ,Br - or I - Q is Cs + .

9. A method for preparing a thin film, characterized in that, include: A composition is provided, the composition comprising a quantum dot material, polystyrene, and a solvent; Deposit the composition to form an initial thin film; The initial film is subjected to plasma treatment to form a first polar group on the surface of the polystyrene, thereby obtaining a film.

10. The method for preparing a thin film according to claim 9, characterized in that, The polystyrene constitutes 0.9% to 8.5% by mass in the composition; and / or, The mass ratio of the quantum dot material to the polystyrene is (2:1) to (10:1); and / or, The dielectric constant of the solvent is 0 to 4; and / or, The first polar group includes at least one of C-N and O=C-N; and / or, The composition further includes a metal oxide, and the method further includes: phototreating the initial film to form a second polar group on the polystyrene surface.

11. The method for preparing a thin film according to claim 10, characterized in that, The light treatment includes ultraviolet light treatment; and / or, The second polar group includes at least a carbonyl group; and / or, The mass ratio of the polystyrene to the metal oxide is (5:1) to (10:1); and / or, The metal oxide is selected from at least one of SnO2, Al2O3, CuO, ZnO, ZnS / ZnO, MgO, ZnMgO, TaO, and NbO.

12. The method for preparing a thin film according to any one of claims 9 to 11, characterized in that, The first polar group includes a nitrogen-containing polar group, optionally, the nitrogen-containing polar group includes at least one of C-N and O=C-N; and / or, The working gas used in the plasma treatment includes a nitrogen source gas, optionally including at least one selected from NH3, NO, NO2, N2O, N2O3, N2O4, and N2H4; and / or, The quantum dot material is an oil-soluble quantum dot, and the quantum dot material is selected from one or more of single-component quantum dots, core-shell structure quantum dots, and inorganic perovskite quantum dots, and the core-shell structure quantum dots include one or more shells;The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shell of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds, wherein the group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZn Te, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, and AlP One or more of As, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the III-VI compound is selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and the IV-VI compound is selected from SnS, SnSe, SnTe, and Pb. One or more of S, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe are selected from the group I-III-VI compounds. The group I-III-VI compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. The inorganic perovskite quantum dots have the general structural formula QJT3, where J is a divalent metal cation selected from Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ Each time T appears, it is independently selected from Cl. - ,Br - or I - Q is Cs + ; and / or, The solvent includes at least one of toluene, xylene, anisole, phenyldecane, 1-methylnaphthalene, 1-allylnaphthalene, trimethylnaphthalene, benzene, cyclohexane, octane, hexane, decane, dodecane, tridecane, tetradecane, pentadecane, bicyclohexane, biphenyl, ethylnaphthalene, 4-butylbiphenyl, cyclohexylbenzene, phenyldecane, pentaphenyl, m-xylene, o-xylene, 2-isopropylnaphthalene, and nonylbenzene.

13. The method for preparing a thin film according to claim 12, characterized in that, The working gas for plasma treatment also includes an inert gas, which includes at least one of N2, Ar, He, and Ne. The inert gas and the nitrogen source gas form a mixed gas, wherein the volume fraction of the nitrogen source gas relative to the mixed gas is 80% to 95%; and / or, The flow rate of the nitrogen source gas is 50–300 ml / min; and / or, The power of the plasma treatment is 50–400W; and / or, The plasma treatment time is 0.5–5 min; and / or, The irradiation power of the ultraviolet light is 10–30 W; and / or, The irradiation time of the ultraviolet light is 1 to 5 minutes.

14. An optoelectronic device, characterized in that, It includes a stacked anode, an active layer, and a cathode; The active layer comprises the thin film according to any one of claims 5 to 8, or is prepared by the method for preparing the thin film according to any one of claims 9 to 13.

15. The optoelectronic device according to claim 14, characterized in that, A hole-functional layer is provided between the anode and the active layer. The material of the hole-functional layer includes one or more of organic materials, a first inorganic material, and a second inorganic material. The organic material includes poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacryloyl-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylene(ethylenedioxythiophene) Hexyl di[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4’-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-di Amines, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N',N'-tetraarylbenzidine, The first inorganic material comprises one or more of the following: 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], and poly[2-methoxy-5-[(3,7-dimethyloctyloxy)-1,4-phenyl]-1,2-vinyldiyl]; the first inorganic material comprises one or more of the following: graphene, fullerene, oxides of nickel, oxides of molybdenum, oxides of tungsten, oxides of vanadium, p-type gallium nitride, oxides of chromium, oxides of copper, oxides of hafnium, sulfides of copper, sulfides of molybdenum, and sulfides of tungsten.The second inorganic material comprises one or more doped first compounds, wherein the host compound of the doped first compound comprises graphene, fullerene, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals, and the molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped first compound; and / or, An electronic functional layer is provided between the cathode and the active layer. The material of the electronic functional layer includes one or more of a third inorganic material and a fourth inorganic material. The third inorganic material includes one or more of an undoped first metal oxide and a group IIB-VIA semiconductor material. The undoped first metal oxide is selected from one or more of ZnO, TiO2, and SnO2. The group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, CdS, CdSe, ZnTe, and CdTe. The fourth inorganic material includes one or more doped second compounds, the general formula of which is A. (1-x) M x O, wherein x is independently greater than 0 and not greater than 0.5 each time it appears, A and M are different, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; optionally, the doped second compound is selected from Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O; and / or, The anode and the cathode are each independently selected from one or more of the following: metal electrode, silicon-carbon electrode, doped or undoped metal oxide electrode, and composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; and the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

16. A display device, characterized in that, It includes thin films prepared using the composition according to any one of claims 1 to 4, or thin films according to any one of claims 5 to 8; or thin films prepared using the method for preparing thin films according to any one of claims 9 to 13, or optoelectronic devices according to claims 14 or 15.

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