Anti-glare structure, perovskite solar cell and application thereof

Abstract

This invention provides an anti-glare structure, a perovskite solar cell, and their applications. The anti-glare structure includes a substrate and a micro-protrusion array layer disposed on one side surface of the substrate. The micro-protrusion array layer includes several independent micro-protrusion structures. With the direction from the edge region of the micro-protrusion array layer to the center region as the target direction, the height and bottom diameter of the micro-protrusion structures decrease along the target direction. This invention, through the gradient structure design of the micro-protrusion array layer, performs gradient control of light reflection, achieving uniform diffuse reflection of light across the entire area, resulting in excellent anti-glare performance while maintaining high light transmittance to meet lighting requirements. When used in perovskite solar cells, this anti-glare structure provides anti-glare performance and ensures light transmittance / light collection while reducing local light intensity differences in the perovskite layer, enabling the perovskite solar cell to have excellent photoelectric conversion efficiency.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to an anti-glare structure, perovskite solar cells and their applications. Background Technology

[0002] With the rapid development of the building-integrated photovoltaic (BIPV) market, semi-transparent photovoltaic modules have become a key technology for achieving a balance between architectural aesthetics and power generation. However, traditional semi-transparent photovoltaic modules (such as crystalline silicon-based semi-transparent modules and cadmium telluride / copper indium gallium selenide thin-film-based semi-transparent modules) have two major technical defects in practical applications, which seriously limit their adaptability to different scenarios: (1) Strong light glare pollution problem. The surface protective glass of traditional semi-transparent modules is conventional transparent glass with a specular reflectivity of 8-12%. Under direct sunlight, high-brightness reflective spots will form on the surface of the module. According to actual measurements, its glare index (Unified Glare Rating, or UGR) is generally higher than 22, which significantly exceeds the glare threshold (UGR≤19) for office environments specified in ISO 8995-1. This will not only cause visual interference to pedestrians around the building, but also create strong light stimulation for drivers on the road, posing a safety hazard that could lead to traffic accidents. (2) Insufficient scenario-based collaborative adaptability. Taking the airport BIPV scenario as an example, the performance requirements of photovoltaic modules in this scenario are special, and traditional modules cannot meet the multi-dimensional adaptation requirements. Among the requirements, glare control is crucial. In airport operations, when the angle of solar incidence exceeds 60°, the intensity of reflected light from the surface of traditional components increases exponentially. This light easily enters the pilot's 0-60° sensitive field of vision and the observation field of tower personnel, causing visual discomfort and even interfering with flight path judgment. The U.S. Federal Aviation Administration (FAA) explicitly requires that glare assessments of optoelectronic products around airports meet a green rating, namely, diffuse reflectance ≤12% and reflected light intensity ≤0.5 cd / m² in sensitive areas. 2 Traditional photovoltaic (PV) modules cannot meet these stringent standards. Furthermore, there are stringent requirements for light transmission and aesthetics: airport terminal roofs, boarding bridges, and other architectural components need to balance natural lighting with overall architectural aesthetics, requiring PV modules to have high visible light transmittance (≥65%). However, traditional crystalline silicon-based semi-transparent modules, due to inherent limitations in their crystal structure, typically have visible light transmittance of less than 5%, failing to meet lighting requirements. While thin-film-based semi-transparent modules offer slightly improved transmittance, they still struggle to achieve a balance between transmittance and power generation efficiency, and suffer from poor flexibility. In addition, traditional PV modules are all rigid structures, unable to be bent to adapt to non-planar BIPV scenarios such as boarding bridges and curved roofs, further limiting their application in complex architectural forms.

[0003] Perovskite solar cells, as a next-generation photovoltaic technology, possess irreplaceable core advantages in BIPV (Building Integrated Photovoltaics) application scenarios due to their unique material and structural characteristics, compared to traditional crystalline silicon cells and thin-film cells (cadmium telluride, copper indium gallium selenide, etc.). The active layer of a perovskite solar cell is a perovskite thin film. By precisely controlling the thickness and bandgap width of the active layer, the visible light transmittance can be continuously adjusted within the range of 50%-80%, flexibly matching the lighting requirements of different building scenarios. Perovskite solar cells have significant advantages in photoelectric conversion efficiency and excellent low-light response characteristics, performing well during low-light periods in the morning and evening (light intensity <200 W / m²). 2 The power generation efficiency of perovskite solar cells is 15%-20% higher than that of traditional crystalline silicon cells, and it can adapt to the power generation needs under different outdoor lighting conditions throughout the day, ensuring the overall power generation of the BIPV system. In addition, perovskite solar cells can be fabricated based on flexible polymer substrates such as PEN (polyethylene naphthalate), PET (polyethylene terephthalate), and PI (polyimide). The resulting flexible modules have a critical bending radius of ≤5 mm, which can closely fit non-planar building structures such as corridors and curved roofs, solving the problem that traditional rigid photovoltaic modules cannot adapt to complex building forms.

[0004] To address the problem of glare pollution from strong sunlight, the industry typically employs anti-glare photovoltaic (PV) modules. Traditional anti-glare PV modules use ordinary tempered glass or conventional anti-reflective glass, and there are two main ways to achieve the anti-glare effect: One is to use a frosted anti-glare coating. This coating uses acrylic resin, polyurethane resin, etc. as a base, adding inorganic matte powders such as silica and titanium dioxide. The powder particles create a rough surface to achieve diffuse reflection, but the powder is prone to agglomeration, leading to uneven scattering and significantly reducing light transmittance. Furthermore, the surface has low hardness and is easily worn, making it unsuitable for long-term outdoor use of PV modules. The second method is to use a chemically etched anti-glare coating. This involves non-uniformly etching the glass surface with etching solutions such as hydrofluoric acid to form a micron-level pit structure. This structure has slightly higher light transmittance, but the etched structure still easily creates concentrated reflections for large-angle incident light, with a glare index (UGR) generally >22. Moreover, it is only suitable for rigid glass and cannot be used with the flexible substrates of perovskite solar cells. Moreover, the single-sided reflectivity of ordinary tempered glass sheets is about 8%-10%. After conventional anti-reflection treatment, the single-sided reflectivity can be reduced to 4%-5%. Although this can alleviate the glare problem under strong direct sunlight, the light transmittance is mostly ≤70%, and the photoelectric conversion capability is weak, making it unsuitable for BIPV scenarios such as airport roofs and boarding bridges that require both lighting and illumination. Although a few existing semi-transparent perovskite modules have attempted to adapt to lighting requirements, they have not carried out targeted optimization designs for specific application scenarios, failing to achieve a synergistic balance of lighting, power generation, and anti-glare performance. Specifically, the anti-glare structure (such as a single micro-convex array) cannot accurately control the angle of reflected light (easily falling into the pilot's sensitive field of vision); when the light transmittance is less than 60%, the indoor lighting effect is poor, making it difficult to meet the lighting conditions required for personnel activities in airport locations; when the photoelectric conversion efficiency is less than 15%, it cannot provide a stable and sufficient power output for the airport, weakening the practical application value of photovoltaic power generation. All of these fail to meet the core requirement of airport scenarios for multi-functional synergy of modules. Furthermore, existing anti-glare perovskite modules are mostly standard rigid sizes, making them unsuitable for customizing to the curved surfaces of airport BIPV buildings (e.g., the arched roofs of jet bridges) or irregular structures (e.g., skylights on terminal roofs). Moreover, they fail to incorporate BIPV installation methods (e.g., flat roof installation, facade installation) and glare-generating factors (e.g., solar altitude angle, building orientation) into their directional anti-glare structures, relying solely on system-level optimization (e.g., adjusting bracket tilt angles). This results in poor applicability in airport BIPV installation spaces with limited space (e.g., low-rise building roofs around runways). Therefore, there is an urgent need in this field to develop a photovoltaic product that fully leverages the advantages of perovskite solar cells, balances anti-glare, light transmission, and photoelectric performance, and adapts to the specific needs of airport BIPV scenarios, thereby addressing the core bottleneck issues of existing technologies in BIPV applications. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide an anti-glare structure, a perovskite solar cell, and their applications. Through the structural design of a micro-convex array layer, the anti-glare structure enables gradient control of light reflection, achieving uniform diffuse reflection of light across the entire area and obtaining excellent anti-glare performance. The perovskite solar cell incorporating this anti-glare structure fully meets the three core requirements of anti-glare, high visible light transmittance, and stable photoelectric conversion efficiency. Furthermore, it exhibits excellent adaptability to various scenarios and has broad application prospects in fields such as BIPV (Building Integrated Photovoltaics).

[0006] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides an anti-glare structure, the anti-glare structure comprising a substrate and a micro-bump array layer disposed on one side surface of the substrate, the micro-bump array layer comprising a plurality of independent micro-bump structures; with the direction from the edge region of the micro-bump array layer to the center region as the target direction, the height of the micro-bump structure decreases along the target direction, and the bottom diameter of the micro-bump structure decreases along the target direction.

[0007] The anti-glare structure provided by this invention features a micro-protrusion array layer with a specific structure. The micro-protrusions in the edge region have a large height and bottom diameter, while the micro-protrusions in the central region have a small height and bottom diameter. This size gradient achieves "gradient control of light reflection," resulting in the following specific optical effects: For large-angle incident light (e.g., side sunlight or oblique light from a vehicle environment), the tall and large-sized micro-protrusions in the edge region can diffusely reflect light to a range of 120-150°, preventing light from directly entering the human eye (glare angle is typically 0-60°); For normal incident light (e.g., midday sunlight or front lighting), the low and small-sized micro-protrusions in the central region only diffusely reflect light to a range of 30-60°, thus avoiding glare and reducing light reflection loss to the outside of the battery, ensuring the light absorption efficiency of the perovskite layer. Therefore, based on the gradient structure design of the micro-convex array layer, the anti-glare structure of this invention can convert incident light at different angles (such as low-angle light in the morning and evening, and vertical light at noon) into uniform diffuse reflected light. The high convexity at the edges scatters large-angle light, while the low convexity at the center scatters vertical light, thereby improving the diffuse reflectance and achieving excellent anti-glare effect. It also has excellent light transmittance, fully meeting the lighting requirements. When used in perovskite solar cells, this anti-glare structure provides anti-glare performance and ensures light transmittance / lighting requirements while reducing local light intensity differences in the perovskite layer. This avoids increased carrier recombination rate due to uneven light intensity, resulting in excellent photoelectric conversion efficiency for the perovskite solar cell.

[0008] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0009] It should be noted that the height of the micro-protrusion structure decreases along the target direction, and the bottom diameter of the micro-protrusion structure decreases along the target direction. The decrease includes discrete decrease (which can also be understood as "stepped decrease") and / or continuous decrease.

[0010] As a preferred embodiment of the present invention, the height of the micro-bump structure in the micro-bump array layer is 4-17 μm, decreasing along the target direction. Exemplarily, its height can be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, and specific values ​​between these values. For space limitations and for the sake of brevity, the present invention will not exhaustively list all the specific values ​​included in the range. It is understood that the height of the micro-bump structure is 4-17 μm, the height of the micro-bump structure in the edge region of the micro-bump array layer is not higher than 17 μm, and the height of the micro-bump structure in the central region is not lower than 4 μm.

[0011] As a preferred embodiment of the present invention, the bottom diameter of the micro-protrusion structure in the micro-protrusion array layer is 9-22 μm, decreasing along the target direction. Exemplarily, the bottom diameter can be 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, or 21 μm, as well as specific values ​​between these ranges. For space limitations and for the sake of brevity, the present invention will not exhaustively list all the specific values ​​included in the range. It is understood that the bottom diameter of the micro-protrusion structure is 9-22 μm, the bottom diameter of the micro-protrusion structure in the edge region of the micro-protrusion array layer is no greater than 22 μm, and the bottom diameter of the micro-protrusion structure in the central region is no less than 9 μm.

[0012] As a preferred embodiment of the present invention, the distance between any two adjacent micro-protrusion structures decreases along the target direction.

[0013] As a preferred embodiment of the present invention, the distance between any two adjacent micro-protrusion structures in the micro-protrusion array layer (hereinafter referred to as the "array spacing") is 4-11 μm, and decreases along the target direction. Exemplarily, the array spacing can be 4.5 μm, 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm, 7.5 μm, 8 μm, 8.5 μm, 9 μm, 9.5 μm, 10 μm, or 10.5 μm, as well as specific values ​​between these values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list all the specific values ​​included in the range. It is understood that the distance between any two adjacent micro-protrusion structures is 4-11 μm, the distance between any two adjacent micro-protrusion structures in the edge region of the micro-protrusion array layer is no greater than 11 μm, and the distance between any two adjacent micro-protrusion structures in the central region is no less than 4 μm.

[0014] As a preferred embodiment of the present invention, the micro-convex array layer includes: Edge area; Central area; and A transition region, which is located between the edge region and the center region.

[0015] The height of the micro-protrusion structure in the edge region is 13.5-16.5 μm, for example, it can be 13.8 μm, 14 μm, 14.2 μm, 14.5 μm, 14.8 μm, 15 μm, 15.2 μm, 15.5 μm, 15.8 μm, 16 μm, 16.2 μm or 16.4 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, this invention will not exhaustively list the specific values ​​included in the range.

[0016] Preferably, the height of the micro-protrusion structure in the central region is 4-6 μm, for example, it can be 4.2 μm, 4.4 μm, 4.5 μm, 4.6 μm, 4.8 μm, 5.2 μm, 5.4 μm, 5.5 μm, 5.6 μm or 5.8 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0017] Preferably, the height of the micro-protrusion structure in the central region is less than the height of the micro-protrusion structure in the transition region, which is less than the height of the micro-protrusion structure in the edge region; the height of the micro-protrusion structure in the transition region decreases along the target direction, preferably decreasing gradually.

[0018] Preferably, the height of the micro-protrusion structure in the transition region is 4.5-16 μm, for example, it can be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm or 15 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0019] As a preferred embodiment of the present invention, the bottom diameter of the micro-protrusion structure in the edge region is 18-22 μm, for example, it can be 18.2 μm, 18.5 μm, 18.8 μm, 19 μm, 19.2 μm, 19.5 μm, 19.8 μm, 20 μm, 20.2 μm, 20.5 μm, 20.8 μm, 21 μm, 21.2 μm, 21.5 μm or 21.8 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0020] Preferably, the bottom diameter of the micro-protrusion structure in the central region is 9-11 μm, for example, it can be 9.2 μm, 9.4 μm, 9.5 μm, 9.6 μm, 9.8 μm, 10 μm, 10.2 μm, 10.4 μm, 10.5 μm, 10.6 μm or 10.8 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0021] Preferably, the bottom diameter of the micro-protrusion structure in the central region is less than the bottom diameter of the micro-protrusion structure in the transition region, which is less than the bottom diameter of the micro-protrusion structure in the edge region; the bottom diameter of the micro-protrusion structure in the transition region decreases along the target direction, preferably gradually decreasing.

[0022] Preferably, the bottom diameter of the micro-protrusion structure in the transition region is 10-20 μm, for example, it can be 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm or 19 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0023] As a preferred embodiment of the present invention, the distance between any two adjacent micro-protrusion structures in the edge region is 9-11 μm, for example, it can be 9.2 μm, 9.4 μm, 9.5 μm, 9.6 μm, 9.8 μm, 10 μm, 10.2 μm, 10.4 μm, 10.5 μm, 10.6 μm or 10.8 μm, and specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0024] Preferably, the distance between any two adjacent micro-protrusions in the central region is 4-6 μm, for example, it can be 4.2 μm, 4.4 μm, 4.5 μm, 4.6 μm, 4.8 μm, 5.2 μm, 5.4 μm, 5.5 μm, 5.6 μm or 5.8 μm, and specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0025] Preferably, the distance between any two adjacent micro-protrusions in the central region is less than the distance between any two adjacent micro-protrusions in the transition region, which is less than the distance between any two adjacent micro-protrusions in the edge region; the distance between any two adjacent micro-protrusions in the transition region decreases along the target direction, preferably decreasing gradually.

[0026] Preferably, the distance between any two adjacent micro-protrusion structures in the transition region is 4.5-10 μm, for example, it can be 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm, 7.5 μm, 8 μm, 8.5 μm, 9 μm or 9.5 μm, as well as specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0027] As a preferred embodiment of the present invention, taking the length from the edge to the center of the micro-convex array layer as 100%, the length of the edge region is 10%-40%, for example, it can be 12%, 14%, 15%, 16%, 18%, 20%, 22%, 24%, 25%, 26%, 28%, 30%, 32%, 35%, or 38%, as well as specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0028] Preferably, the length of the central region is 10%-30%, for example, it can be 12%, 14%, 15%, 16%, 18%, 20%, 22%, 24%, 25%, 26% or 28%, and specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0029] For example, if the length of the micro-convex array layer is 10 cm, then the length from the edge to the center is 5 cm, and the length of the edge region is 20%, which means that the edge region is a region of 0-1 cm (0 represents the outermost position); the length of the center region is 20%, which means that the center region is a region of 4-5 cm (5 represents the outermost position).

[0030] As a preferred embodiment of the present invention, in the micro-protrusion array layer, the height of the micro-protrusion structure in the edge region is 13.5-16.5 μm, the bottom diameter is 18-22 μm, and the distance between any two adjacent micro-protrusion structures is 9-11 μm; the height of the micro-protrusion structure in the center region is 4-6 μm, the bottom diameter is 9-11 μm, and the distance between any two adjacent micro-protrusion structures is 4-6 μm; the transition region is located between the edge region and the center region, and the relevant parameters of its micro-protrusion structure are between those of the edge region and the center region, and decrease along the target direction (preferably gradually decreasing, more preferably linearly gradually decreasing). This invention constructs a gradient three-dimensional micro-protrusion structure by precisely setting the structural parameters (height, bottom diameter, and array spacing) of the micro-protrusion array layer. Its core feature is a continuous gradient change in key parameters from the edge to the center. The parameters of the micro-protrusion array decrease systematically with the target direction and radial position (from the edge region to the center region): the protrusion height smoothly and gradually decreases from 15±1.5 μm to 5±1 μm, forming a height gradient of "high at the edge and low at the center," avoiding localized concentrated reflected light caused by a single-height structure; the bottom diameter decreases from 20±2 μm to 10±1 μm, working in conjunction with the height gradient to optimize the protrusion's "height-to-diameter ratio" (height / diameter) from 0.75±0.15 (edge ​​region) to 0.5±0.15 (center region), ensuring structural mechanical stability and preventing easy breakage of high-height protrusions at the edge; simultaneously, the array spacing decreases from 10±1 μm to 5±1 μm, resulting in a protrusion density of approximately 100 protrusions / mm in the edge region. 2 Approximately 400 per mm in the central area 2 By compensating for the changes in scattering ability caused by height differences through density gradient, uniform diffuse reflection of light is achieved throughout the entire area. The micro-convex array enhances light scattering, maintaining ≥90% light absorption even at 75% transmittance. Therefore, the anti-glare structure can precisely control the angle of reflected light, achieving uniform diffuse reflection of light throughout the entire area without affecting light transmission, thus possessing excellent anti-glare performance, light transmittance, and light-gathering performance.

[0031] As a preferred embodiment of the present invention, the surface roughness (Ra) of the micro-convex array layer is 1-5 μm, for example, it can be 1.2 μm, 1.5 μm, 1.8 μm, 2 μm, 2.2 μm, 2.5 μm, 2.8 μm, 3 μm, 3.2 μm, 3.5 μm, 3.8 μm, 4 μm, 4.2 μm, 4.5 μm or 4.8 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but preferably 1.7-2.3 μm.

[0032] As a preferred embodiment of the present invention, the side of the micro-bump array layer away from the substrate is further provided with an ultraviolet-curable resin layer.

[0033] This invention preferably incorporates a UV-curable resin layer on the micro-bump array layer to enhance the stability of the micro-bump structure and the micro-bump array layer. Specifically, flexible substrates are at risk of cracking when bent, leading to damage and / or detachment of the micro-bump structure. The UV-curable resin layer possesses excellent toughness, maintaining the integrity of the texture structure even with a bending radius ≤ 5 mm. Preferably, the cured UV-curable resin layer has a hardness ≥ Shore D70 and a pencil hardness of 2H-3H, resisting friction-induced texture wear to protect the micro-bump array layer and achieve long-term stability of the anti-glare effect.

[0034] Preferably, the transmittance of the UV-curable resin layer is ≥92%, which helps to reduce the light loss of the substrate itself.

[0035] Furthermore, flexible substrates exposed to ultraviolet light for extended periods are prone to chain segment breakage, leading to yellowing and decreased light transmittance. Ultraviolet-cured resin layers (such as resins containing benzotriazole-based ultraviolet absorbers) can absorb ultraviolet light in the 300-400 nm wavelength range, reducing direct ultraviolet light irradiation of the substrate and keeping the decrease in light transmittance under the same ultraviolet irradiation conditions to within 5%.

[0036] Preferably, the thickness of the UV-curable resin layer is 10-30 μm, for example, it can be 12 μm, 14 μm, 15 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 25 μm, 26 μm or 28 μm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but 10-20 μm is further preferred.

[0037] Preferably, the refractive index of the UV-curable resin layer is 1.4-1.6, for example, it can be 1.42, 1.44, 1.45, 1.46, 1.48, 1.5, 1.52, 1.54, 1.55, 1.56 or 1.58, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but 1.4-1.55 is further preferred.

[0038] More preferably, the adhesion between the UV-curable resin layer and the low-refractive layer is ≥5 MPa to avoid the low-refractive layer from falling off.

[0039] As a preferred embodiment of the present invention, a low-refractive-index layer is further provided on the side of the UV-curable resin layer away from the micro-convex array layer, wherein the refractive index of the low-refractive-index layer is less than that of the UV-curable resin layer. This results in an anti-glare structure with a composite structure of "gradient micro-convexity + low-refractive-index layer," achieving gradient control of light reflection while forming a refractive index gradient that sequentially increases from "air" to "low-refractive-index layer" to "UV-curable resin layer," further reducing interface reflectivity and improving light transmittance.

[0040] Preferably, the refractive index of the low-refractive layer is 1.3-1.5, for example, it can be 1.32, 1.34, 1.35, 1.36, 1.38, 1.4, 1.42, 1.44, 1.45, 1.46 or 1.48, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but 1.3-1.4 is further preferred.

[0041] Preferably, the low-refractive layer includes any one or a combination of at least two of the following: a MgF2 layer, an Al2O3 / SiO2 composite layer, and a ZnO / SiO2 composite layer, with a MgF2 layer being more preferred.

[0042] Preferably, the thickness of the low-refractive layer is 50-200 nm, for example, it can be 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 150 nm, 160 nm or 180 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, and 80-140 nm is further preferred.

[0043] As a preferred technical solution of the present invention, a magnesium fluoride (MgF2) layer is provided on the ultraviolet curable resin layer. The refractive index of MgF2 is 1.38, which is between that of air (1.00) and the ultraviolet curable resin layer (1.40-1.55), forming a refractive index gradient of "air (1.00)-MgF2 (1.38)-ultraviolet curable resin (1.52)", reducing the interface reflectivity. This reduces the interface reflectivity from 3-5% of traditional anti-glare coatings (such as frosted anti-glare coatings or chemically etched anti-glare coatings) to 1-1.5%, thereby improving the transmittance of the anti-glare structure and the perovskite solar cell using it.

[0044] Furthermore, the MgF2 low-refractive-index layer meets the design requirements of a "quarter-wavelength antireflection film". When the thickness of the low-refractive-index layer is controlled to be 1 / 4 of the visible light center wavelength (550 nm) (i.e., the physical thickness is about 130 nm), the reflected light from the upper and lower surfaces of the coating undergoes destructive interference. This can further reduce the interface reflectivity in the 400-800 nm band from 1-2% when the resin layer exists alone to below 0.5%. This antireflection effect directly weakens the basic intensity of specular reflected light, allowing the resin micro-nano texture based on the UV-cured resin layer to only play the role of "dispersing the remaining reflected light", thus avoiding secondary glare caused by excessive reflected light scattering. Moreover, magnesium fluoride has a wide range of transparency from ultraviolet (0.12 μm) to infrared (10 μm), and a visible light transmittance of ≥98% in the 400-800 nm range, which perfectly matches the light absorption band (350-800 nm) of the perovskite layer. As a result, the anti-glare structure can be used in perovskite solar cells without losing photovoltaic efficiency due to its own absorption, while ensuring that the light scattered by the resin micro-nano texture penetrates uniformly, avoiding "scattered bright spots" caused by local light intensity differences, and keeping the glare index (UGR) of the whole area stable at ≤18, which meets the stringent requirements of airport BIPV and other scenarios.

[0045] Preferably, the substrate comprises a flexible substrate or a rigid substrate.

[0046] As a preferred embodiment of the present invention, the substrate is a flexible substrate, and its material preferably includes any one or a combination of at least two of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI); thereby, the anti-glare structure and the perovskite solar cell using it have excellent flexibility, transparency, heat resistance and lightness.

[0047] In a second aspect, the present invention provides a method for preparing the anti-glare structure as described in the first aspect, the method comprising: The anti-glare structure is obtained by constructing a micro-bump array layer on one side surface of the substrate using laser etching.

[0048] Preferably, the laser power for laser etching is 200-430 mW, for example, it can be 220 mW, 250 mW, 280 mW, 300 mW, 320 mW, 350 mW, 380 mW, 390 mW, 400 mW, 410 mW or 420 mW, as well as specific point values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0049] Preferably, the energy density of the laser etching is 25-45 J / cm². 2 For example, it can be 28 J / cm 2 30 J / cm 2 32 J / cm 2 34 J / cm 2 35 J / cm 2 36 J / cm 2 38 J / cm 2 40 J / cm 2 42 J / cm 2 Or 44 J / cm 2 As well as the specific point values ​​between the above point values, due to space limitations and for the sake of brevity, this invention will not exhaustively list the specific point values ​​included in the range.

[0050] Preferably, the pulse frequency of the laser etching is 15-25 kHz, for example, it can be 16 kHz, 17 kHz, 18 kHz, 19 kHz, 20 kHz, 21 kHz, 22 kHz or 24 kHz, as well as specific point values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0051] Preferably, the scanning speed of the laser etching is 150-400 mm / s, for example, it can be 180 mm / s, 200 mm / s, 220 mm / s, 250 mm / s, 280 mm / s, 300 mm / s, 320 mm / s, 350 mm / s or 380 mm / s, and specific point values ​​between the above point values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific point values ​​included in the range.

[0052] In this invention, the structural parameters of the micro-convex array layer are controlled by adjusting the parameters of laser etching (e.g., laser power, energy density, pulse frequency, and scanning speed). Preferably, the laser power, energy density, and pulse frequency are higher and the scanning speed is lower in the edge region; the laser power, energy density, and pulse frequency are lower and the scanning speed is higher in the center region; and the parameters for laser etching in the transition region are between those in the edge and center regions.

[0053] Preferably, the laser power for laser etching in the edge region is 350-420 mW (e.g., 360 mW, 370 mW, 380 mW, 390 mW, 400 mW, 410 mW, etc.), and the energy density is 38-45 J / cm². 2 (e.g., 38.5 J / cm) 2 39 J / cm 2 39.5 J / cm 2 40 J / cm 2 40.5 J / cm 2 41 J / cm 2 41.5 J / cm 2 42 J / cm 2 43 J / cm 2 44 J / cm 2 The pulse frequency is 18-22 kHz (e.g., 18.5 kHz, 19 kHz, 19.5 kHz, 20 kHz, 20.5 kHz, 21 kHz, 21.5 kHz, etc.), and the scan speed is 170-230 mm / s (e.g., 180 mm / s, 185 mm / s, 190 mm / s, 1950 mm / s, 200 mm / s, 205 mm / s, 210 mm / s, 215 mm / s, 220 mm / s, etc.).

[0054] Preferably, the laser power for laser etching in the transition region is 280-410 mW (e.g., 290 mW, 300 mW, 310 mW, 320 mW, 330 mW, 340 mW, 350 mW, 360 mW, 380 mW, 400 mW, etc.), and the energy density is 30-43 J / cm². 2 (e.g., 31 J / cm) 2 32 J / cm 2 33 J / cm 2 34 J / cm 2 35 J / cm 2 36 J / cm 2 37 J / cm 238 J / cm 2 39 J / cm 2 40 J / cm 2 41 J / cm 2 42 J / cm 2 The pulse frequency is 14-21 kHz (e.g., 15 kHz, 15.5 kHz, 16 kHz, 16.5 kHz, 17 kHz, 17.5 kHz, 18 kHz, 18.5 kHz, 19 kHz, 19.5 kHz, 20 kHz, etc.), and the scan speed is 200-310 mm / s (e.g., 210 mm / s, 220 mm / s, 230 mm / s, 240 mm / s, 250 mm / s, 260 mm / s, 270 mm / s, 280 mm / s, 290 mm / s, 300 mm / s, etc.).

[0055] Preferably, the laser power for laser etching in the central region is 250-310 mW (e.g., 260 mW, 270 mW, 280 mW, 290 mW, 300 mW, etc.), and the energy density is 28-33 J / cm². 2 (e.g., 28.5 J / cm) 2 29 J / cm 2 28.5 J / cm 2 30 J / cm 2 30.5 J / cm 2 31 J / cm 2 32 J / cm 2 The pulse frequency is 13-17 kHz (e.g., 13.5 kHz, 14 kHz, 14.5 kHz, 15 kHz, 15.5 kHz, 16 kHz, 16.5 kHz, etc.), and the scan speed is 250-350 mm / s (e.g., 260 mm / s, 270 mm / s, 280 mm / s, 290 mm / s, 300 mm / s, 310 mm / s, 320 mm / s, 330 mm / s, 340 mm / s, etc.).

[0056] As a preferred embodiment of the present invention, the preparation method further includes: coating the micro-convex array layer with a photocurable resin, and then curing it with ultraviolet light to obtain an ultraviolet-curable resin layer.

[0057] Preferably, the photocurable resin includes an acrylate resin.

[0058] Preferably, the curing shrinkage rate of the photocurable resin is 3-5%, for example, it can be 3.2%, 3.5%, 3.8%, 4%, 4.2%, 4.5% or 4.8%, etc. It has low curing shrinkage rate, good flexibility, strong interfacial adhesion, good compatibility with silicon / glass / flexible substrates, etc., and can completely replicate the fine morphology of the micro-bump array layer.

[0059] Preferably, the photocurable resin is a commercially available material, including but not limited to any one or a combination of at least two of the following materials: Henkel Loctite 3665, 3526, Huitian New Materials 3260, and Konda New Materials UV-2008.

[0060] Preferably, the ultraviolet light wavelength for ultraviolet curing is 350-380 nm, for example, it can be 355 nm, 360 nm, 365 nm, 370 nm or 375 nm, and specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, and 365 nm is further preferred.

[0061] Preferably, the power of the ultraviolet curing is 50-80 mW / cm. 2 For example, it can be 52 mW / cm 2 55 mW / cm 2 58 mW / cm 2 60 mW / cm 2 62 mW / cm 2 65 mW / cm 2 68 mW / cm 2 70 mW / cm 2 72 mW / cm 2 75 mW / cm 2 Or 78 mW / cm 2 As well as the specific point values ​​between the above point values, due to space limitations and for the sake of brevity, this invention will not exhaustively list the specific point values ​​included in the range.

[0062] Preferably, the UV curing time is 20-60 s, for example, it can be 30 s, 35 s, 40 s, 45 s, 50 s or 55 s, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0063] As a preferred embodiment of the present invention, the preparation method further includes: depositing a low-refractive layer on the ultraviolet-curable resin layer by vapor deposition.

[0064] In this invention, the micro-protrusion array layer is prepared by laser etching. The laser-etched micro-protrusion array layer requires no additional light-shielding material, and the size of the micro-protrusion structure is on the micrometer scale, much larger than the wavelength of visible light (400-800 nm), thus avoiding the decrease in transmittance caused by Rayleigh scattering. For example, after laser etching of a 0.1 mm substrate, the transmittance of the micro-protrusion array layer in the 400-800 nm wavelength range is still ≥90%. After superimposing an ultraviolet-cured resin layer and a low-refractive layer, the total transmittance of the anti-glare structure can be maintained at ≥85%, which can meet the lighting requirements of BIPV scenarios such as airport roofs and boarding bridges.

[0065] Thirdly, the present invention provides a perovskite solar cell, the perovskite solar cell including the anti-glare structure as described in the first aspect.

[0066] Preferably, the perovskite solar cell includes an anti-glare structure, a first electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a second electrode layer arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer; one of the first carrier transport layer and the second carrier transport layer is a hole transport layer and the other is an electron transport layer.

[0067] As a preferred embodiment of the present invention, the perovskite solar cell includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, and a second electrode layer arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0068] The perovskite solar cell provided by this invention achieves a multi-functional synergy of "adhesive structure - first electrode layer - hole transport layer - perovskite layer - electron transport layer - second electrode layer" by rationally designing a layered structure. This precisely defines the structural parameters (height, diameter, array spacing) of the micro-convex array layer in the anti-glare structure, optimizes the combination of UV-curable resin layer and low-refractive layer, and further optimizes the thickness of the perovskite layer and adjusts the bandgap to achieve its semi-transparent properties. Ultimately, this achieves the multi-functional synergy of "adhesive-power generation-semi-transparent-anti-glare" perovskite solar cell. It meets the triple core requirements of precise control of the reflected light angle in sensitive areas, high visible light transmittance (≥70%), and stable photoelectric conversion efficiency (≥15%) in special BIPV scenarios such as airports. It also adapts to the customized needs of complex architectural forms such as curved bridge surfaces and irregular terminal structures, as well as areas with limited installation space. This solves the technical bottleneck of existing technologies where anti-glare, light-gathering, and power generation performance are difficult to coordinate, resulting in poor scenario adaptability.

[0069] Preferably, the first electrode layer and the substrate constitute a conductive substrate layer.

[0070] Preferably, the material of the first electrode layer includes any one or a combination of at least two of ITO, FTO, and IZO.

[0071] As a preferred embodiment of the present invention, the thickness of the hole transport layer is 20-100 nm, for example, it can be 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm or 95 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range.

[0072] Preferably, the hole transport layer comprises inorganic hole transport materials and / or organic hole transport materials.

[0073] Preferably, the inorganic hole transport material includes any one or a combination of at least two of nickel oxide, copper oxide, and copper thiocyanate.

[0074] Preferably, the organic hole transport material comprises (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz), (4-(9H-carbazole-9-yl)butyl)phosphonic acid (4PACz), (4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl)phosphonic acid (MeO-4PACZ), 2,2',7,7'-tetra( N,N ⁻¹(4-methoxyphenyl)amino)-9,9'-spirodifluorene (Spiro-OMeTAD), poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA), poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) or any combination of at least two of these.

[0075] As a preferred embodiment of the present invention, the thickness of the perovskite layer is 100-500 nm, for example, it can be 120 nm, 150 nm, 180 nm, 200 nm, 220 nm, 250 nm, 280 nm, 300 nm, 320 nm, 350 nm, 380 nm, 400 nm, 420 nm, 450 nm or 480 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but 100-300 nm is preferred.

[0076] Preferably, the perovskite layer comprises ABX3 type perovskite material, wherein A is selected from CH3NH3. + (MA) +CH(NH2)2 + (FA) + ), Cs + 、Rb + Any one or at least two of the following; B is selected from Pb 2+ Sn 2+ Any one or at least two of the following; X is a halogen, selected from Cl. - ,Br - I - Any one or at least two of them.

[0077] Preferably, this invention adjusts the intrinsic bandgap of perovskite materials by doping and / or changing the composition, adapting it to the synergistic requirements of semi-transparency and photoelectric conversion efficiency. The bandgap adjustment method includes: the bandgap of ABX3 type metal halide perovskites is affected by the interaction between the s and p orbitals of the B-site metal cation and the p orbital of the X-site halide anion. The valence band apex is an antibonding hybrid orbital of the metal s and halide p orbitals, while the conduction band trough is a hybrid orbital of the metal p and halide p orbitals. The higher the energy level of the halide p orbital, the higher the valence band apex and the narrower the bandgap. Semi-transparent perovskite modules need to balance light transmission performance and open-circuit voltage through wide bandgap design; therefore, widening the bandgap of the perovskite material is key to achieving the semi-transparent characteristics of the module. To obtain wide bandgap perovskite materials with a bandgap of 1.63 eV or higher that meet the requirement of translucency, the most common approach is to replace the A-site cation with the X-site anion. The outer electron orbital energy levels of the A-site cation do not directly contribute to the bandgap, but the rotation of cations of different sizes within the octahedral space induces lattice contraction, expansion, and octahedral tilt, thus indirectly affecting the bandgap width. Among these, smaller A-site cations (such as Cs) are particularly effective. + 、Rb + This causes lattice contraction, resulting in a smaller BXB angle, thereby widening the band gap. Under spin-orbit coupling, the band gap of Pb-based perovskites increases with Cs. + 、Rb + The content of small-sized A cations increases with increasing MA content. + FA + The content of large-size A cations decreases as the size increases; X-position anion substitution is the core method of bandgap modulation, which can continuously change the light absorption characteristics of materials to meet the requirements of semi-transparency, for example, by using Br with a lower p orbital energy level. - Partial replacement I - Cs was obtained by X-site anion substitution. 1-m FA m Pb(I 1-n Br nPerovskite materials with a 3-structure (where 0 < m < 1, for example, 0.1, 0.15, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.85, or 0.9, etc., and 0 < n < 1, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, etc.) can achieve continuous bandgap tuning from 1.58 to 2.29 eV. Since Cl atoms have lower p orbital energy levels, the bandgap can be further widened by using a mixture of iodine and chlorine. Finally, through precise bandgap tuning, the perovskite light-absorbing layer can achieve the required semi-transparent properties while ensuring photoelectric conversion efficiency.

[0078] As a preferred embodiment of the present invention, the thickness of the electron transport layer is 5-50 nm, for example, it can be 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, 22 nm, 25 nm, 30 nm, 35 nm, 40 nm or 45 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but preferably 10-20 nm.

[0079] Preferably, the electron transport layer needs to have high visible light transmittance, with a transmittance of ≥85% in the 400-800 nm band, to avoid blocking incident light and affecting the light absorption of the perovskite layer and the semi-transparent properties of the battery.

[0080] Preferably, the electron transport layer comprises inorganic electron transport materials and / or organic electron transport materials.

[0081] Preferably, the inorganic electron transport material includes any one or a combination of at least two of titanium oxide, tin oxide, indium sulfide, and fullerene C60.

[0082] Preferably, the organic electron transport material includes fullerene derivative PCBM.

[0083] As a preferred embodiment of the present invention, a buffer layer is further provided between the electron transport layer and the second electrode layer.

[0084] Preferably, the buffer layer comprises 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline (BCP).

[0085] As a preferred embodiment of the present invention, the thickness of the buffer layer is 5-50 nm, for example, it can be 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, 22 nm, 25 nm, 30 nm, 35 nm, 40 nm or 45 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but preferably 10-20 nm.

[0086] As a preferred embodiment of the present invention, the thickness of the second electrode layer is 10-100 nm, for example, it can be 20 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm or 95 nm, as well as specific values ​​between the above values. Due to space limitations and for the sake of brevity, the present invention will not exhaustively list the specific values ​​included in the range, but preferably 30-60 nm.

[0087] Preferably, the second electrode layer is a semi-transparent electrode, and its material preferably includes Au and / or Ag.

[0088] Preferably, the perovskite solar cell further includes an encapsulating film layer and / or a water and oxygen barrier layer to protect the cell and ensure a seal to prevent moisture and oxygen penetration.

[0089] Preferably, the adhesive film layer is disposed on the side surface of the second electrode layer away from the electron transport layer.

[0090] Preferably, the water-oxygen barrier layer is disposed on the side surface of the adhesive film layer away from the second electrode layer.

[0091] Preferably, the adhesive film layer comprises a polyolefin elastomer adhesive film (POE adhesive film).

[0092] Preferably, the water-oxygen barrier layer comprises a flexible water-oxygen barrier membrane.

[0093] On the other hand, the present invention provides a method for fabricating the perovskite solar cell, the method comprising: providing a substrate containing a first electrode layer, and sequentially fabricating a hole transport layer, a perovskite layer, an electron transport layer and a second electrode layer on the first electrode layer to obtain a cell structure; Then, according to the preparation method provided in the second aspect, an anti-glare structure is formed on the surface of the substrate away from the first electrode layer to obtain the perovskite solar cell.

[0094] Preferably, the method for preparing the hole transport layer includes any one or a combination of at least two of the following: physical vapor deposition, blade coating, slot coating, and spin coating.

[0095] Preferably, the method for preparing the perovskite layer includes any one or a combination of at least two of the following: physical vapor deposition, blade coating, slot coating, and spin coating.

[0096] Preferably, the method for preparing the electron transport layer includes any one or a combination of at least two of the following: vacuum method, blade coating method, spin coating method, and slot coating method; the material thickness can be reduced during preparation.

[0097] Preferably, the preparation method further includes preparing a buffer layer, which is located between the electron transport layer and the second electrode layer.

[0098] Preferably, the preparation method of the buffer layer includes any one or a combination of at least two of the following: vacuum method, blade coating method, spin coating method, and slot coating method.

[0099] Preferably, the method for preparing the second electrode layer includes vacuum evaporation, and more preferably, the vacuum degree is controlled to be ≥5×10⁻⁶. -4 Pa, with a vapor deposition / sputtering rate of 0.1-0.5 Å / s (e.g., 0.2 Å / s, 0.3 Å / s, 0.4 Å / s, etc.), to control the thickness of the second electrode layer to 30-60 nm, ensuring that the electrode film formation process does not cause physical damage or chemical erosion to the underlying electron transport layer, while ensuring the light transmittance and conductivity of the electrode.

[0100] Preferably, the preparation method further includes an encapsulation step, specifically including: setting an adhesive film layer on the second electrode layer, setting a water and oxygen barrier layer on the adhesive film layer, and hot pressing to obtain a soft-encapsulated battery structure.

[0101] It is understood that the perovskite solar cell can be prepared by the method described above, which involves first preparing the cell structure and then preparing the anti-glare structure, or by the method described above, which involves first preparing the anti-glare structure and then preparing the cell structure.

[0102] Fourthly, the present invention provides a photovoltaic module, the photovoltaic module comprising at least one of the anti-glare structure as described in the first aspect and the perovskite solar cell as described in the third aspect.

[0103] Compared with the prior art, the present invention has at least the following beneficial effects: (1) In the anti-glare structure provided by the present invention, the gradient structure design of the micro-convex array layer enables gradient control of light reflection, achieving uniform diffuse reflection of light across the entire area and obtaining excellent anti-glare effect. Simultaneously, it possesses excellent light transmittance, fully meeting the lighting requirements. When used in perovskite solar cells, the anti-glare structure provides anti-glare performance and ensures light transmittance / lighting efficiency while reducing local light intensity differences in the perovskite layer. This avoids an increase in carrier recombination rate due to uneven light intensity, resulting in excellent photoelectric conversion efficiency for the perovskite solar cells.

[0104] (2) The perovskite solar cell provided by the present invention includes the anti-glare structure. Through the gradient structure and parameter design of the micro-convex array layer, incident light at different angles is converted into uniform diffuse reflection light. It is preferably paired with an ultraviolet light curing resin layer to protect the micro-convex array and extend its service life. Combined with the interlayer refractive index matching design, the reflection loss is reduced, making the perovskite solar cell semi-transparent. It achieves multi-functional synergy of anti-glare, high visible light transmittance and high photoelectric conversion efficiency. It can also adapt to the scenario-based customization needs of complex building forms and areas with limited installation space, and has broad application prospects in BIPV and other fields.

[0105] (3) Through gradient structure design and parameter optimization of micro-convex array layer, the present invention can precisely control light reflection, so that the diffuse reflectance of the perovskite solar cell is ≥11%, visible light transmittance is ≥70%, glare index UGR≤19, photoelectric conversion efficiency is ≥15%, and it has excellent anti-glare performance, high visible light transmittance and excellent light collection effect and excellent photoelectric conversion performance, which can fully meet the needs of BIPV and other scenarios. Attached Figure Description

[0106] Figure 1 A schematic diagram of a perovskite solar cell provided for a specific embodiment; Among them, 10-conductive substrate layer, 11-micro-bump array layer, 12-ultraviolet light curable resin layer, 13-low refractive layer, 21-hole transport layer, 22-perovskite layer, 23-electron transport layer, 24-second electrode layer. Figure 2 A process flow diagram for fabricating a perovskite solar cell according to a specific embodiment; Figure 3 The graphs show the photoelectric performance test results of the perovskite solar cells provided in Examples 1-3 and Comparative Example 1. Detailed Implementation

[0107] To facilitate understanding of the present invention, specific embodiments are provided to further illustrate the technical solution of the present invention. Those skilled in the art should understand that the embodiments are merely illustrative of the present invention and should not be considered as specific limitations thereof.

[0108] The terms “comprising,” “including,” “having,” “containing,” or any other variations thereof, as used herein, are intended to cover non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that includes the listed elements is not limited to those elements and may also include other elements not expressly listed or elements inherent to such composition, step, method, article, or apparatus.

[0109] In this invention, features specified as "first" and "second" may explicitly or implicitly include one or more of these features, used to distinguish and describe features, without any order or emphasis. In the description of this invention, unless otherwise stated, "multiple" means two or more.

[0110] In one specific embodiment, the anti-glare structure includes a substrate, a micro-bump array layer, an ultraviolet-curable resin layer and a low-refractive layer arranged sequentially, wherein the refractive index of the low-refractive layer is less than the refractive index of the ultraviolet-curable resin layer.

[0111] The micro-bump array layer includes several independent micro-bump structures; with the direction from the edge region of the micro-bump array layer to the center region as the target direction, the height of the micro-bump structure decreases along the target direction, and the bottom diameter of the micro-bump structure decreases along the target direction.

[0112] In one specific embodiment, the micro-convex array layer includes an edge region, a central region, and a transition region located between the edge region and the central region.

[0113] The height of the micro-protrusions in the edge region is 13.5-16.5 μm, the bottom diameter is 18-22 μm, and the distance between any two adjacent micro-protrusions is 9-11 μm; the height of the micro-protrusions in the center region is 4-6 μm, the bottom diameter is 9-11 μm, and the distance between any two adjacent micro-protrusions is 4-6 μm; the parameters (height, bottom diameter, array spacing) of the micro-protrusions in the transition region are between those of the edge region and the center region, and decrease along the target direction (preferably gradually decreasing).

[0114] In one specific embodiment, the perovskite solar cell includes the aforementioned anti-glare structure, the schematic diagram of which is shown below. Figure 1 As shown, the structure includes a conductive substrate layer 10, a hole transport layer 21, a perovskite layer 22, an electron transport layer 23, and a second electrode layer 24, arranged sequentially. The conductive substrate layer 10 includes a substrate and a first electrode layer, with the first electrode layer located near the hole transport layer 21. A micro-bump array layer 11, a UV-curable resin layer 12, and a low-refractive-index layer 13 are sequentially disposed on one side of the substrate of the conductive substrate layer 10.

[0115] In one specific embodiment, the fabrication process flow diagram of the perovskite solar cell is as follows: Figure 2 As shown, it includes the following steps: S1, Cleaning of conductive substrate; S2. Fabrication of battery structure: A hole transport layer is fabricated on the first electrode layer of a conductive substrate, a perovskite layer is fabricated on the hole transport layer, an electron transport layer is fabricated on the perovskite layer, and a second electrode layer is fabricated on the electron transport layer to form a battery structure. S3. Preliminary soft encapsulation of the battery structure: A polyolefin elastomer (POE) film (of the same area) is pasted on the surface of the second electrode layer of the battery structure, and then a flexible water and oxygen barrier film is pasted on the surface of the polyolefin elastomer film to obtain a preliminary encapsulated battery; the preliminary encapsulated battery is placed in a laminator for hot pressing to obtain a semi-transparent perovskite battery structure with preliminary soft encapsulation. Preferably, the hot pressing process parameters include: heating and pressurizing at a temperature of 100°C and an applied pressure of 10 kPa for 20 min.

[0116] S4. Pre-treatment of the back side of the semi-transparent perovskite cell structure for initial soft packaging: Clean the back side (flexible substrate) to remove oil and impurities. S5. Laser etching to form a micro-bump array layer: Laser etching is used to construct a micro-bump array layer with gradient changes on the surface of a flexible substrate; S6. Preparation of UV-curable resin layer: Coat the micro-convex array layer with UV-curable resin, and then cure it with UV light to solidify and shape the resin, thus obtaining the UV-curable resin layer. S7. Preparation of low-refractive layer by vapor deposition: Low-refractive material (preferably magnesium fluoride) is vapor deposited on the ultraviolet-curable resin layer to obtain a low-refractive layer; S8. Encapsulating Flexible Semi-Transparent Perovskite Solar Cells: An encapsulating adhesive, i.e., an edge seal layer, is pasted onto the edge of the cleaned area around the obtained flexible semi-transparent perovskite solar cell; then, a water and oxygen barrier film is pasted onto the edge seal layer to protect the perovskite solar cell. Further lamination is performed to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell module.

[0117] The anti-glare structure, perovskite solar cell and its preparation method described in this invention will be detailed below using several embodiments as examples, but the anti-glare structure, perovskite solar cell and its preparation method are not limited to the following embodiments.

[0118] In the following specific embodiments of the present invention, all materials for which no preparation method is provided are conventional commercially available chemicals that can be purchased through market channels. For example, the photocurable resins used are Henkel Loctite 3665 / 3526, Huitian New Materials 3260, and Kangda New Materials UV-2008.

[0119] Example 1 An anti-glare structure includes a flexible PEN substrate (10 cm × 10 cm) with a thickness of 0.2 mm and a micro-bump array layer disposed thereon. The micro-bump array layer includes a plurality of independent micro-bump structures. In the edge region of 0-1 cm, the height of the micro-bump structure is 15 μm, the bottom diameter is 20 μm, and the distance between two adjacent micro-bump structures (referred to as "array spacing") is 10 μm. Then, in the transition region of 1-4 cm (radial range), the height of the micro-bump structure linearly decreases from 15 μm to 5 μm, the bottom diameter linearly decreases from 20 μm to 10 μm, and the array spacing linearly decreases from 10 μm to 5 μm. The height, bottom diameter, and array spacing in the transition region are gradually varied at different rates. For any radial position x (1≤x≤4, unit: cm) in the transition region, the parameters of the micro-protrusion structure are calculated using the following formulas: height H(x)=(15-10) / 3(x-1), bottom diameter D(x)=(20-10) / 3(x-1), array spacing S(x)=(10-5) / 3(x-1). Finally, in the central region of 4-5 cm, the height of the micro-protrusion structure is 5 μm, the bottom diameter is 10 μm, and the array spacing is 5 μm. The surface roughness Ra of the micro-protrusion array layer is 2 μm (based on the equivalent roughness model of a regular micro-protrusion array), ensuring uniform diffuse reflection without affecting light transmission.

[0120] A perovskite solar cell employs the anti-glare structure provided in this embodiment, which includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a second electrode layer (Ag) arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0121] The perovskite solar cell is prepared as follows: (1) Remove the protective film from the PEN conductive substrate (thickness 0.2 mm, size 10 cm × 10 cm, electrode material is ITO), etch it using a picosecond laser, and then place the etched conductive substrate into a plasma processor for UV ozone cleaning for 5 min.

[0122] (2) Preparation of hole transport layer: Preparation of SAM solution: Mix MeO-2PACz, MeO-4PACz and ethanol evenly to obtain SAM solution, wherein the concentration of MeO-2PACz is 0.5 mg / mL and the concentration of MeO-4PACz is 0.5 mg / mL; The conductive substrate obtained in step (1) is immersed in SAM solution for 5 min to prepare a hole transport layer with a thickness of 50 nm on the electrode layer.

[0123] (3) Preparation of perovskite layer: Preparation of perovskite precursor solution: 237.11 mg of formamidine iodide, 276.61 mg of lead iodide, 38.97 mg of cesium iodide, and 146.80 mg of lead bromide were added. N 150 mL of methylpyrrolidone N,N 900 mL of dimethylformamide and 100 mL of dimethyl sulfoxide were mixed thoroughly, the solution temperature was raised to 70 °C, and the mixture was stirred for 10 min to obtain Cs. 0.15 FA 0.85 Pb(I 0.73 Br 0.27 )3 Perovskite precursor solution; Using the aforementioned perovskite precursor solution, a perovskite layer was prepared by slit coating on the hole transport layer. The slit coating height was set to 30 μm. The prepared liquid film was then evacuated and annealed at 140 °C for 10 min to obtain a semi-transparent perovskite layer with a thickness of 150 nm and a band gap of 1.72 eV.

[0124] (4) Preparation of electron transport layer: C is deposited on the surface of the perovskite layer by vapor deposition. 60 An electron transport layer with a thickness of 15 nm was prepared. (5) Preparation of buffer layer: C obtained in step (4) 60 A BCP buffer layer with a thickness of 10 nm was prepared on the surface by vapor deposition.

[0125] Then, picosecond lasers are used to perform P2 etching on the perovskite layer and active layer to further refine the cell segmentation, ensure electrical isolation between each sub-cell, and maintain the series structure to optimize the cell's performance and output.

[0126] (6) Preparation of silver electrode layer: 45 nm metallic silver electrode is deposited on the surface of buffer layer; then picosecond laser is used to perform P3 etching on the metallic silver electrode to complete the final division of the battery and form independent sub-cell units.

[0127] (7) Soft encapsulation: The battery structure obtained in step (6) is etched and trimmed with a nanosecond laser using P4 etching to remove excess material from the battery edges, preparing for subsequent encapsulation and protection measures, and ensuring that the battery edges do not affect the overall performance; then, POE film and water-oxygen barrier film are applied to its surface, and it is placed in a hot laminator for encapsulation to ensure a seal to prevent moisture and oxygen from penetrating, thus obtaining a preliminary soft-encapsulated flexible semi-transparent battery structure.

[0128] (8) Backside cleaning: The surface of the substrate (the side away from the electrode layer) of the flexible semi-transparent battery structure obtained in step (7) is cleaned by plasma with a cleaning power of 50 W and a time of 30 s to remove oil and impurities. (9) Fabrication of the micro-convex array layer: Ultraviolet picosecond laser galvanometer was used for stitching and etching. The single scan width was 10 cm, the stitching accuracy was ±1 μm, and the laser power was set at 400 mW and the energy density was 42 J / cm at the edge 0-1 cm. 2 The pulse frequency was 20 kHz, the scanning speed was 200 mm / s, and the number of scans was 1. A micro-bump structure with a height of 15 μm, a bottom diameter of 20 μm, and an array spacing of 10 μm was etched. Then, the transition region, with a radial range of 1-4 cm, was etched using a picosecond laser. The laser etching process parameters were set to linearly and continuously gradient from the substrate edge to the center. The specific parameter gradient range and pattern were as follows: laser power linearly and continuously gradient from 400 mW to 300 mW, and energy density from 38 J / cm². 2 Linear continuous gradient up to 32 J / cm 2 The pulse frequency was linearly and continuously varied from 20 kHz to 15 kHz, and the scanning speed was linearly and continuously varied from 200 mm / s to 300 mm / s. Through this synchronous linear variation of process parameters, a micro-protrusion structure with a height of 15 μm to 5 μm, a bottom diameter of 20 μm to 10 μm, and an array spacing of 10 μm to 5 μm was etched. The rate of change of each parameter was matched with the radial length of the transition region. Finally, a laser power of 300 mW and an energy density of 32 J / cm² were set at the center 4-5 cm. 2 The pulse frequency was 15 kHz, the scanning speed was 300 mm / s, and the number of scans was 1. The micro-bump structure with a height of 5 μm, a bottom diameter of 10 μm, and an array spacing of 5 μm was etched to obtain the micro-bump array layer. (10) Hard encapsulation: After etching, the surface is purged with low-pressure nitrogen and then encapsulated. A black encapsulating adhesive with a thickness of 3 mm and a width of 15 mm is pasted on the edge of the cleaned area around the perovskite solar cell, which is the edge seal layer. A water and oxygen barrier film is pasted on the edge seal layer to protect the cell. Further lamination is performed. The lamination temperature is set to 120℃, the vacuum is evacuated for 300 s, and the lamination time is 200 s to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell.

[0129] Example 2 An anti-glare structure includes a flexible PEN substrate (0.2 mm thick, 10 cm × 10 cm), a micro-bump array layer, and a UV-curable resin layer arranged sequentially. The micro-bump array layer comprises several independent micro-bump structures. In the edge region (0-1 cm), the height of each micro-bump structure is 15 μm, the bottom diameter is 20 μm, and the distance between adjacent micro-bump structures (referred to as the "array spacing") is 10 μm. In the transition region (1-4 cm), the height of the micro-bump structures gradually changes from 15-5 μm, the bottom diameter from 20-10 μm, and the array spacing from 10-5 μm. Finally, in the central region (4-5 cm), the height of the micro-bump structures is 5 μm, the bottom diameter is 10 μm, and the array spacing is 5 μm. The thickness of the UV-curable resin layer is 20 μm.

[0130] A perovskite solar cell employs the anti-glare structure provided in this embodiment, which includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a second electrode layer (Ag) arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0131] The perovskite solar cell is prepared as follows: Steps (1)-(9) are the same as in Example 1, resulting in a battery structure containing a micro-convex array layer; (10) Preparation of UV-curable resin layer: After etching, the surface of the micro-bump array layer was purged with low-pressure nitrogen, and then a UV-curable resin (Konda New Materials UV-2008) was coated on the surface. Then, it was irradiated with a 365 nm UV lamp with a power of 60 mW / cm². 2 The time is 40 seconds to allow the resin to fully cure, with a hardness of Shore D70, ensuring bending stability (bending radius ≤ 5 mm without cracking), and obtaining a UV-cured resin layer with a thickness of 20 μm. (11) Hard encapsulation: A black encapsulating adhesive with a thickness of 3 mm and a width of 15 mm is pasted on the edge of the cleaned area around the perovskite solar cell, which is the edge seal layer; the water and oxygen barrier film is pasted on the edge seal layer to protect the cell; further lamination is performed, with the lamination temperature set at 120℃, vacuuming for 300 s, and lamination time at 200 s, to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell.

[0132] Example 3 An anti-glare structure includes a flexible PEN substrate (0.2 mm thick, 10 cm × 10 cm), a micro-bump array layer, a UV-curable resin layer, and a low-refractive-index layer arranged sequentially. The micro-bump array layer comprises several independent micro-bump structures. In the edge region (0-1 cm), the height of each micro-bump structure is 15 μm, the bottom diameter is 20 μm, and the distance between adjacent micro-bump structures (referred to as the "array spacing") is 10 μm. In the transition region (1-4 cm), the height of the micro-bump structures gradually changes from 15-5 μm, the bottom diameter from 20-10 μm, and the array spacing from 10-5 μm. Finally, in the central region (4-5 cm), the height of the micro-bump structures is 5 μm, the bottom diameter is 10 μm, and the array spacing is 5 μm. The thickness of the UV-curable resin layer is 20 μm. The low-refractive-index layer is a MgF2 layer with a thickness of 100 nm.

[0133] A perovskite solar cell employs the anti-glare structure provided in this embodiment, which includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a second electrode layer (Ag) arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0134] The perovskite solar cell is prepared as follows: Steps (1)-(9) are the same as in Example 1, resulting in a battery structure containing a micro-convex array layer; (10) Preparation of UV-curable resin layer: The surface of the micro-convex array layer was purged with low-pressure nitrogen, and then a UV-curable resin (Konda New Materials UV-2008) was coated on the surface. Then, it was irradiated with a 365 nm UV lamp with a power of 60 mW / cm². 2 The time is 40 s to allow the resin to fully cure, with a hardness of Shore D70, ensuring bending stability (bending radius ≤ 5 mm without cracking), and obtaining a UV-cured resin layer with a thickness of 20 μm. (11) Preparation of low refractive layer: 100 nm magnesium fluoride is deposited on the surface of the UV-curable resin layer as a low refractive layer; (12) Hard encapsulation: A black encapsulating adhesive with a thickness of 3 mm and a width of 15 mm is pasted on the edge of the cleaned area around the perovskite solar cell, which is the edge seal layer; the water and oxygen barrier film is pasted on the edge seal layer to protect the cell; further lamination is performed, with the lamination temperature set at 120℃, vacuuming for 300 s, and lamination time at 200 s, to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell.

[0135] Example 4 An anti-glare structure includes a flexible PEN substrate (0.2 mm thick, 10 cm × 10 cm in size), a micro-bump array layer, an ultraviolet-curable resin layer, and a low-refractive layer arranged sequentially. The micro-protrusion array layer comprises several independent micro-protrusion structures. In the edge region (0-1 cm), the height of each micro-protrusion is 16.4 μm, the bottom diameter is 21.8 μm, and the array spacing between adjacent micro-protrusions is 10.9 μm. In the transition region (1-4 cm), the height of the micro-protrusions linearly decreases from 16.4 μm to 5.9 μm, the bottom diameter linearly decreases from 21.8 μm to 10.9 μm, and the array spacing linearly decreases from 10.9 μm to 5.9 μm. The rate of change of height, bottom diameter, and array spacing in the transition region is synchronized. Finally, in the central region (4-5 cm), the height of the micro-protrusions is 5.9 μm, the bottom diameter is 10.9 μm, and the array spacing is 5.9 μm. The surface roughness Ra of the micro-protrusion array layer is 2.2 μm, ensuring uniform diffuse reflection without affecting light transmission. The thickness of the UV-curable resin layer is 10 μm. The low-refractive layer is a MgF2 layer with a thickness of 50 nm.

[0136] A perovskite solar cell employs the anti-glare structure provided in this embodiment, which includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a second electrode layer (Ag) arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0137] The perovskite solar cell is prepared as follows: Steps (1)-(9) are the same as in Example 1, except that the laser etching parameters in step (9) are adjusted to match the micro-bump array layer structure of this example, as follows: (9) Fabrication of the micro-convex array layer: Ultraviolet picosecond laser galvanometer was used for stitching and etching. The single scan width was 10 cm, the stitching accuracy was ±1 μm, and the laser power was set at 410 mW and the energy density was 43 J / cm at the edge 0-1 cm. 2 The laser etching process employed a pulse frequency of 20.5 kHz, a scanning speed of 190 mm / s, and a single scan to etch a micro-bump structure with a height of 16.4 μm, a bottom diameter of 21.8 μm, and an array spacing of 10.9 μm. Then, in the transition region with a radial range of 1-4 cm, the micro-bump structure was etched using a picosecond laser. The laser etching process parameters were set to linearly and continuously gradient from the substrate edge towards the center, with a single scan. Specifically, the laser power linearly and continuously gradiented from 410 mW to 310 mW, and the energy density from 43 J / cm². 2 Linear continuous gradient up to 33 J / cm 2The pulse frequency was linearly and continuously varied from 20.5 kHz to 15.5 kHz, and the scanning speed was linearly and continuously varied from 190 mm / s to 290 mm / s. Through this synchronous linear variation of process parameters, a micro-protrusion structure with a height of 16.4 μm to 5.9 μm, a bottom diameter of 21.8 μm to 10.9 μm, and an array spacing of 10.9 μm to 5.9 μm was etched, with the variation rate of each parameter matching the radial length of the transition region. Finally, a laser power of 310 mW and an energy density of 33 J / cm² were set at the center 4-5 cm. 2 The pulse frequency was 15.5 kHz, the scanning speed was 290 mm / s, and the number of scans was 1. The etching yielded a micro-bump structure with a height of 5.9 μm, a bottom diameter of 10.9 μm, and an array spacing of 5.9 μm, thus obtaining the micro-bump array layer. (10) Preparation of UV-curable resin layer: After etching, the surface of the micro-bump array layer was purged with low-pressure nitrogen, and then a UV-curable resin (Konda New Materials UV-2008) was coated on the surface. Then, it was irradiated with a 365 nm UV lamp with a power of 60 mW / cm². 2 The time is 40 seconds to allow the resin to fully cure, with a hardness of Shore D70, ensuring bending stability (bending radius ≤ 5 mm without cracking), and obtaining a UV-cured resin layer with a thickness of 10 μm. (11) Preparation of low refractive layer: 50 nm magnesium fluoride is deposited on the surface of the UV-curable resin layer as a low refractive layer; (12) Hard encapsulation: A black encapsulating adhesive with a thickness of 3 mm and a width of 15 mm is pasted on the edge of the cleaned area around the perovskite solar cell, which is the edge seal layer; the water and oxygen barrier film is pasted on the edge seal layer to protect the cell; further lamination is performed, with the lamination temperature set at 120℃, vacuuming for 300 s, and lamination time at 200 s, to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell.

[0138] Example 5 An anti-glare structure includes a flexible PEN substrate (0.2 mm thick, 10 cm × 10 cm in size), a micro-bump array layer, an ultraviolet-curable resin layer, and a low-refractive layer arranged sequentially. The micro-protrusion array layer comprises several independent micro-protrusion structures. In the edge region (0-1 cm), the height of each micro-protrusion is 13.8 μm, the bottom diameter is 18.2 μm, and the array spacing between adjacent micro-protrusions is 9.2 μm. In the transition region (1-4 cm), the height of the micro-protrusions linearly decreases from 13.8 μm to 4.2 μm, the bottom diameter from 18.2 μm to 9.2 μm, and the array spacing from 9.2 μm to 4.2 μm, with the rate of change synchronized. Finally, in the central region (4-5 cm), the height of the micro-protrusions is 4.2 μm, the bottom diameter is 9.2 μm, and the array spacing is 4.2 μm. The surface roughness Ra of the micro-protrusion array layer is 1.8 μm, ensuring uniform diffuse reflection without affecting light transmission. The thickness of the UV-curable resin layer is 30 μm. The low-refractive layer is a MgF2 layer with a thickness of 200 nm.

[0139] A perovskite solar cell employs the anti-glare structure provided in this embodiment, which includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a second electrode layer (Ag) arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

[0140] The perovskite solar cell is prepared as follows: Steps (1)-(9) are the same as in Example 1, except that the laser etching parameters in step (9) are adjusted to match the micro-bump array layer structure of this example, as follows: (9) Fabrication of the micro-convex array layer: Ultraviolet picosecond laser galvanometer was used for stitching and etching. The single scan width was 10 cm, the stitching accuracy was ±1 μm, and the laser power was set at 370 mW and the energy density was 39 J / cm at the edge 0-1 cm. 2 The laser etching process employed a pulse frequency of 18.5 kHz, a scanning speed of 210 mm / s, and a single scan to etch a micro-bump structure with a height of 13.8 μm, a bottom diameter of 18.2 μm, and an array spacing of 9.2 μm. Then, in a transition region with a radial range of 1-4 cm, the micro-bump structure was etched using a picosecond laser. The laser etching process parameters were set to linearly and continuously gradient from the substrate edge towards the center, with a single scan. Specifically, the laser power linearly and continuously gradiented from 370 mW to 280 mW, and the energy density from 39 J / cm². 2 Linear continuous gradient up to 30 J / cm 2The pulse frequency was linearly and continuously varied from 18.5 kHz to 14.5 kHz, and the scanning speed was linearly and continuously varied from 210 mm / s to 310 mm / s. Through this synchronous linear variation of process parameters, a micro-protrusion structure with a height of 13.8 μm to 4.2 μm, a bottom diameter of 18.2 μm to 9.2 μm, and an array spacing of 9.2 μm to 4.2 μm was etched, with the variation rate of each parameter matching the radial length of the transition region. Finally, a laser power of 280 mW and an energy density of 30 J / cm² were set at the center 4-5 cm. 2 The pulse frequency was 14.5 kHz, the scanning speed was 310 mm / s, and the number of scans was 1. The etching yielded a micro-bump structure with a height of 4.2 μm, a bottom diameter of 9.2 μm, and an array spacing of 4.2 μm, thus obtaining the micro-bump array layer. (10) Preparation of UV-curable resin layer: The surface of the micro-convex array layer was purged with low-pressure nitrogen, and then a UV-curable resin (Konda New Materials UV-2008) was coated on the surface. Then, it was irradiated with a 365 nm UV lamp with a power of 60 mW / cm². 2 The time is 40 s to allow the resin to fully cure, with a hardness of Shore D70, ensuring bending stability (bending radius ≤ 5 mm without cracking), and obtaining a UV-cured resin layer with a thickness of 30 μm. (11) Preparation of low refractive layer: 200 nm magnesium fluoride is deposited on the surface of the UV-curable resin layer as a low refractive layer; (12) Hard encapsulation: A black encapsulating adhesive with a thickness of 3 mm and a width of 15 mm is pasted on the edge of the cleaned area around the perovskite solar cell, which is the edge seal layer; the water and oxygen barrier film is pasted on the edge seal layer to protect the cell; further lamination is performed, with the lamination temperature set at 120℃, vacuuming for 300 s, and lamination time at 200 s, to obtain a fully sealed flexible semi-transparent anti-glare perovskite solar cell.

[0141] Comparative Example 1 A perovskite solar cell differs from Example 1 only in that it does not contain an anti-glare structure. That is, its preparation method differs from Example 1 only in that steps (8) and (9) are not performed. Other steps and process parameters are the same as in Example 1, and a perovskite solar cell is obtained.

[0142] The following performance tests were performed on the aforementioned perovskite solar cells: (1) Total transmittance: The test was conducted using a UV-Vis spectrophotometer (Shimadzu UV-3600) according to the method in standard GB / T 2680-2021. The test wavelength was 400-800 nm, the scan step was 1 nm, the incident light was perpendicular (0°), and a blank flexible PEN substrate with a thickness of 0.2 mm was used as a reference. Data processing: The total transmittance is the integral average of the transmittance in the 400-800 nm band, and the average value is taken from 3 tests.

[0143] (2) Diffuse reflectance (400-800 nm): The test was conducted according to the method in standard GB / T 28488-2012 using an integrating sphere spectrophotometer (Hitachi U-4100) with a d / 8° geometric configuration, a test wavelength of 400-800 nm, a scan step of 1 nm, an integrating sphere diameter ≥150 mm, and a barium sulfate white plate as a reference. Data processing: Diffuse reflectance is the integral average value in the 400-800 nm band. The conductive layer on the back of the sample is blocked to avoid specular reflection interference. The average value is taken from 3 tests.

[0144] (3) Glare Index (UGR): The glare was tested according to the method in standard ISO 8995-1:2014 using a Minolta CL-500A glare meter (with an adjustable angle platform). Test parameters: dark room environment (illuminance ≤50 lx), observation distance 2 m, observation angle 0° / 30° / 60°, simulating sunlight (5500 K, 100 mW / cm²). 2 (AM 1.5 G), the sample was placed in front of a black background plate; Data processing: Read UGR values ​​from different angles and take the average value as the final result.

[0145] (4) Photoelectric conversion performance: Following the method in standard GB / T 6495.4-2023, a Class AAA solar simulator (EnliTech XES-301S) with a temperature control system (temperature control ±1℃) was used, and the irradiance was 100 mW / cm². 2 (AM 1.5 G), test temperature 25℃, scan range -0.2 V to 1.5 V, scan rate 0.01 V / s, sample stabilized for 30 min under test irradiation conditions (light immersion) before test. Data processing: Read the open-circuit voltage (V) from the IV curve. oc ) and I sc Calculate the current density J sc = I sc / Effective area; Fill factor FF=Pmax / (V oc ×I sc Photoelectric conversion efficiency PCE = P max / (irradiation intensity × effective area) × 100%, take the average value after 3 tests; The photoelectric performance test diagrams of the perovskite solar cells provided in Examples 1-5 and Comparative Example 1 are shown below. Figure 3 As shown in Table 1, the relevant test data are as follows.

[0146] Table 1 According to the performance data in Table 1, this invention, through the gradient structure design of the micro-convex array layer, enables the anti-glare structure to convert incident light at different angles into uniform diffuse reflected light. The high convexity at the edges scatters large-angle light, while the low convexity at the center scatters vertical light. The diffuse reflectance of the perovskite solar cell using this structure is increased from 3.2% of conventional cells (comparative example 1) to 11-12.2%, and the local light intensity difference in the perovskite layer is reduced, avoiding the increase in carrier recombination rate caused by uneven light intensity. Simultaneously, the anti-glare structure and the perovskite solar cell using it are semi-transparent, with a visible light transmittance ≥70% (compared to 50-60% for conventional semi-transparent modules), a glare index UGR ≤19, and a photoelectric conversion efficiency ≥15.5% (compared to 10-13% for conventional semi-transparent modules). This achieves a synergy of semi-transparency, anti-glare, and high photoelectric efficiency, solving the technical pain point of traditional modules having limited functionality.

[0147] Furthermore, as can be seen from Examples 1-5, the anti-glare structure of the present invention incorporates an interlayer refractive index matching design to reduce reflection loss (the reflection loss of conventional components is about 8-12%), and the micro-convex array layer is protected by an ultraviolet-cured resin layer to extend its service life, forming a refractive index gradient of "air (1.00) - MgF2 (1.38) - ultraviolet-cured resin (1.52)", which can further improve the total transmittance of the perovskite solar cell, making the cell have better performance in terms of transmittance, anti-glare performance and photoelectric efficiency.

[0148] The present invention has been illustrated through the above embodiments, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials used in the present invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. An anti-glare structure, characterized in that, The anti-glare structure includes a substrate and a micro-bump array layer disposed on one side surface of the substrate, wherein the micro-bump array layer includes a plurality of independent micro-bump structures. With the direction from the edge region of the micro-bump array layer to the center region as the target direction, the height of the micro-bump structure decreases along the target direction, and the bottom diameter of the micro-bump structure decreases along the target direction.

2. The anti-glare structure according to claim 1, characterized in that, The height of the micro-bump structure in the micro-bump array layer is 4-17 μm, and decreases along the target direction; And / or, the bottom diameter of the micro-bump structure in the micro-bump array layer is 9-22 μm, and decreases along the target direction; And / or, the distance between any two adjacent micro-protrusion structures decreases along the target direction; And / or, the distance between any two adjacent micro-bump structures in the micro-bump array layer is 4-11 μm, and decreases along the target direction.

3. The anti-glare structure according to claim 1 or 2, characterized in that, The micro-bump array layer includes: Edge area; Central area; and A transition region located between the edge region and the center region; The height of the micro-protrusion structure in the edge region is 13.5-16.5 μm, and the height of the micro-protrusion structure in the central region is 4-6 μm. Preferably, the height of the micro-protrusion structure in the central region is less than the height of the micro-protrusion structure in the transition region, which is less than the height of the micro-protrusion structure in the edge region. Preferably, the bottom diameter of the micro-protrusion structure in the edge region is 18-22 μm, and the bottom diameter of the micro-protrusion structure in the central region is 9-11 μm; Preferably, the bottom diameter of the micro-protrusion structure in the central region is less than the bottom diameter of the micro-protrusion structure in the transition region, which is less than the bottom diameter of the micro-protrusion structure in the edge region. Preferably, the distance between any two adjacent micro-protrusions in the edge region is 9-11 μm, and the distance between any two adjacent micro-protrusions in the central region is 4-6 μm. Preferably, the distance between any two adjacent micro-protrusions in the central region is less than the distance between any two adjacent micro-protrusions in the transition region, which is less than the distance between any two adjacent micro-protrusions in the edge region.

4. The anti-glare structure according to any one of claims 1-3, characterized in that, The side of the micro-bump array layer away from the substrate is also provided with an ultraviolet-curable resin layer; Preferably, the thickness of the UV-curable resin layer is 10-30 μm; Preferably, the refractive index of the UV-curable resin layer is 1.4-1.6; Preferably, a low-refractive-index layer is further provided on the side of the UV-curable resin layer away from the micro-convex array layer, wherein the refractive index of the low-refractive-index layer is less than the refractive index of the UV-curable resin layer; Preferably, the refractive index of the low-refractive layer is 1.3-1.5; Preferably, the low-refractive layer comprises any one or a combination of at least two of the following: a MgF2 layer, an Al2O3 / SiO2 composite layer, and a ZnO / SiO2 composite layer; Preferably, the thickness of the low-refractive layer is 50-200 nm; Preferably, the substrate material includes any one or a combination of at least two of polyethylene terephthalate, polyethylene naphthalate, and polyimide.

5. A method for preparing an anti-glare structure as described in any one of claims 1-4, characterized in that, The preparation method includes: The anti-glare structure is obtained by constructing a micro-bump array layer on one side surface of the substrate using laser etching.

6. The preparation method according to claim 5, characterized in that, The preparation method further includes: coating the micro-convex array layer with a photocurable resin, and then curing it with ultraviolet light to obtain an ultraviolet-curable resin layer; Preferably, the preparation method further includes: depositing a low-refractive layer on the ultraviolet-curable resin layer by vapor deposition.

7. A perovskite solar cell, characterized in that, The perovskite solar cell includes the anti-glare structure as described in any one of claims 1-4.

8. The perovskite solar cell according to claim 7, characterized in that, The perovskite solar cell includes an anti-glare structure, a first electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, and a second electrode layer arranged sequentially; the micro-convex array layer of the anti-glare structure is located on the side opposite to the first electrode layer.

9. The perovskite solar cell according to claim 8, characterized in that, The thickness of the hole transport layer is 20-100 nm; And / or, the thickness of the perovskite layer is 100-500 nm, preferably 100-300 nm; And / or, the thickness of the electron transport layer is 5-50 nm, preferably 10-20 nm; And / or, a buffer layer is further provided between the electron transport layer and the second electrode layer; And / or, the thickness of the buffer layer is 5-50 nm, preferably 10-20 nm; And / or, the thickness of the second electrode layer is 10-100 nm, preferably 30-60 nm.

10. A photovoltaic module, characterized in that, The photovoltaic module includes at least one of the anti-glare structure as described in any one of claims 1-4 and the perovskite solar cell as described in any one of claims 7-9.

Images