Miniature high-integration digital power amplifier for extreme space

Abstract

This invention relates to the field of automotive audio power amplification technology, and provides a miniature, highly integrated digital power amplifier for use in extreme spaces. The amplifier includes a main unit comprising a signal processing link module, a power amplification link module, a thermoelectric integrated substrate module, and a zero-standby power management module. The signal processing link module and the power amplification link module are constructed in a top-down layered electrical integration topology using a four-layer functional PCB. The four-layer functional PCB and the high thermal conductivity copper substrate unit of the thermoelectric integrated substrate module form a sandwich-style integrated architecture. This sandwich-style integrated architecture is vertically integrated through the four-layer functional PCB by multiple sets of laser-bonded ring interconnect components. This invention achieves high power and low distortion output within a small volume, and possesses advantages such as zero standby power consumption, screwless assembly, and fully automated production, making it suitable for automotive audio needs in extreme installation spaces such as motorcycles and new energy intelligent cockpits.

Description

Technical Field

[0001] This invention belongs to the field of vehicle audio power amplification technology, and particularly relates to a miniature highly integrated digital power amplifier for use in extreme spaces. Background Technology

[0002] With the rapid iteration of mobile vehicle audio systems, compact mobile vehicles such as motorcycles and new energy intelligent cockpits place extremely stringent requirements on the installation size, power density, and operational reliability of audio amplifiers. Existing vehicle digital amplifier products have minimum dimensions that are difficult to fit into installation spaces with a width ≤100mm and a thickness ≤30mm. The core technical shortcomings are as follows: First, the circuit integration is insufficient, and the core contradiction between size and power cannot be reconciled. Most existing power amplifiers adopt a distributed layout with single-layer / double-layer PCBs, with signal processing, power amplification, power management and other functional units arranged independently. This results in long signal links, large electromagnetic interference, and difficulty in compressing the overall size. A few products that use multi-layer PCBs have unreasonable interlayer interconnection designs, and power circuits and signal circuits cross-interference, making it impossible to achieve continuous high power output in a small volume, and failing to meet the dual requirements of installation and performance in extreme space.

[0003] Secondly, the thermal-electric design is disconnected, resulting in poor output stability and distortion under high-power conditions. Existing high-integration power amplifiers have independent circuit and thermal management designs. The heat dissipation path of the power amplifier chip is mismatched with the circuit topology, and impedance changes caused by chip temperature rise cannot be compensated for by the circuit. Under high-power conditions, chip temperature rise fluctuations are large, output distortion increases significantly, and long-term operational stability is insufficient, further limiting the improvement of power density.

[0004] Third, there are shortcomings in power consumption control and mass production design, resulting in poor environmental adaptability. Existing power amplifiers still have standby current when powered off, which can easily lead to battery depletion in mobile devices; interface units are mostly manually soldered, which is cumbersome and results in poor product consistency; shielding structures are mostly fixed with screws, making assembly and maintenance difficult; at the same time, grounding and electromagnetic compatibility design are inadequate, making it easy for signal abnormalities to occur in the strong electromagnetic interference environment of the vehicle, and unable to adapt to various extreme working conditions.

[0005] Therefore, a miniature, highly integrated digital power amplifier for extreme space applications is needed to solve the above problems. Summary of the Invention

[0006] The purpose of this invention is to provide a miniature, highly integrated digital power amplifier for use in extreme spaces to solve the problems mentioned in the background art.

[0007] To achieve the above objectives, the present invention provides the following technical solution: A miniature, highly integrated digital power amplifier for extreme space applications includes a main unit, which includes a signal processing link module, a power amplification link module, a thermo-electric integrated substrate module, and a zero standby power management module. The signal processing link module and the power amplification link module construct a top-down hierarchical electrical integration topology through a four-layer functional PCB. The four-layer functional PCB and the high thermal conductivity copper substrate unit of the thermo-electric integrated substrate module form a sandwich-style integrated architecture. The sandwich-style integrated architecture vertically penetrates four functional PCBs through multiple sets of laser-bonded ring interconnect components, realizing the electrical interconnection and structural fixation of interlayer signal links, power circuits, and grounding circuits; The Class D power amplifier chip group of the power amplifier link module is sintered and integrated on the upper surface of the high thermal conductivity copper substrate unit, and the signal pins of the Class D power amplifier chip group are electrically connected to the pads of the corresponding functional PCB. The signal terminal of the zero standby power management module is electrically connected to the control terminal of the signal processing link module, and the power terminal of the zero standby power management module is connected in series with the main power supply circuit of the whole machine.

[0008] In a further technical solution, the four-layer functional PCB consists of, from top to bottom, an interface and electrical protection unit, a digital signal processing and control unit, a power amplification and drive unit, and a power distribution and power circuit unit. The high thermal conductivity copper substrate unit is bonded and integrated on the lower surface of the power distribution and power circuit unit; The laser welding ring interconnection assembly is vertically arranged along the corresponding nodes of the signal link, power circuit, and grounding circuit to achieve low impedance interconnection of corresponding electrical nodes between layers.

[0009] In a further technical solution, the Class D power amplifier chipset is disposed between the power distribution and power circuit unit and the high thermal conductivity copper substrate unit; The power output terminal of the Class D power amplifier chipset is electrically connected to the power circuit pad of the power distribution and power circuit unit, and the signal input terminal of the Class D power amplifier chipset is bonded to the output terminal of the drive circuit of the power amplifier drive unit.

[0010] In a further technical solution, the thermo-electric integrated substrate module includes a high thermal conductivity copper substrate unit, a chip sintering thermally conductive solder layer unit, and a thermal matching impedance adjustment unit. The chip sintering thermally conductive solder layer unit is disposed between the Class D power amplifier chip group and the high thermal conductivity copper substrate unit to realize thermal coupling and grounding connection between the Class D power amplifier chip group and the high thermal conductivity copper substrate unit. The thermal matching impedance adjustment unit is connected in parallel with the power supply terminal of the Class D power amplifier chipset.

[0011] A further technical solution is that the zero standby power management module includes a mechanically triggered switching unit, a main power MOSFET switching unit, a gate pull-down protection unit, and an auxiliary power supply unit; The signal output terminal of the mechanically triggered switching unit is electrically connected to the control electrode of the main power MOSFET switching unit, and the auxiliary power supply unit provides a stable driving voltage for the mechanically triggered switching unit and the main power MOSFET switching unit. The power circuit of the main power MOSFET switching unit is connected in series with the main power supply input circuit of the whole machine; The gate pull-down protection unit is connected to ground in parallel with the control electrode of the main power MOSFET switching unit.

[0012] In a further technical solution, the interface and electrical protection unit are integrated with a recessed SMT fully integrated interface subunit; The recessed SMT fully integrated interface subunit includes a power input interface, an audio input interface, and a speaker output interface. All interface terminals are soldered to the corresponding pads of the interface and the electrical protection unit in a one-time SMT mounting electrical connection, and the top surface of the interface terminal does not extend beyond the upper surface of the interface and the electrical protection unit.

[0013] In a further technical solution, the digital signal processing and control unit integrates an audio decoding subunit, a digital filtering subunit, a preamplifier subunit, and an audio effect processing subunit that are connected in sequence. The input terminal and interface of the audio decoding subunit are electrically connected to the audio output terminal of the electrical protection unit; The output of the sound processing subunit is electrically connected to the input of the power amplifier drive unit's drive circuit via a laser bonding ring interconnect component.

[0014] In a further technical solution, the thermal matching impedance adjustment unit includes multiple sets of parallel NTC thermistor subunits and surface-mount capacitor subunits. The NTC thermistor subunits are directly attached to the surface of the Class D power amplifier chip group and are thermally coupled to the Class D power amplifier chip group. The resistance value of the NTC thermistor subunits changes synchronously with the temperature rise of the Class D power amplifier chip group.

[0015] In a further technical solution, the mechanically triggered switching unit includes at least two sets of parallel gold-plated spring pin trigger circuit sub-units. The conduction state of the gold-plated spring pin trigger circuit sub-unit corresponds one-to-one with the conduction state of the main power MOSFET switching unit, and the disconnection state of the gold-plated spring pin trigger circuit sub-unit corresponds one-to-one with the cutoff state of the main power MOSFET switching unit.

[0016] In a further technical solution, the main body of the device also includes a screwless radio frequency shielding grounding assembly; The screwless radio frequency shielding grounding assembly includes a radio frequency shielding cover body, a trapezoidal sliding groove assembly on the plate edge, an elastic buckle assembly, a grounding conductive foam assembly, and a multi-point equipotential grounding topology module. The trapezoidal sliding grooves are symmetrically arranged on both sides of the four-layer functional PCB. The two sides of the radio frequency shielding cover body are provided with trapezoidal convex rails that match the trapezoidal sliding groove group on the plate edge, and the trapezoidal convex rails slide in cooperation with the trapezoidal sliding groove group on the plate edge. The elastic buckle components are respectively set at the ends of the RF shielding cover body and the corresponding positions of the four-layer functional PCB, so as to realize the self-locking fixation of the RF shielding cover body and the four-layer functional PCB. The grounding conductive foam assembly is fixed to the inner wall of the RF shielding cover body and abuts against the grounding pad of the multi-point equipotential grounding topology module. The multi-point equipotential grounding topology module achieves equipotential interconnection of the four functional PCB grounding layers through laser bonding ring interconnection components, and is electrically connected to the grounding terminal of the high thermal conductivity copper substrate unit.

[0017] Compared with the prior art, the beneficial effects of the present invention are: This invention vertically integrates signal processing, power amplification, power distribution, and interface protection functions through a four-layer PCB layout and sandwich stacking architecture. Combined with a recessed interface design, it drastically reduces the overall size of the device, making it perfectly suited for installations in extreme spaces such as motorcycles and smart cockpits. Laser-bonded interconnect components replace traditional connectors and fasteners, achieving low-impedance electrical interconnection between layers while ensuring structural stability, further reducing volume redundancy. The power amplifier chipset is sandwiched between the PCB and the copper substrate, optimizing electrical connections and heat dissipation paths without increasing size, enabling high power output within a small volume. This invention achieves direct thermal coupling between the power chip and a high thermal conductivity copper substrate through a sintered thermally conductive solder layer, eliminating the thermal resistance of the intermediate medium and enabling rapid heat conduction and diffusion. Combined with an NTC thermistor directly attached to the chip body, it senses temperature rise in real time and adjusts impedance to precisely compensate for chip parameter drift, achieving dynamic matching of thermal and electrical characteristics. This integrated "heat dissipation + compensation" design not only solves the temperature rise problem caused by high integration but also stabilizes the chip's operating point, ensuring consistently low-distortion and highly stable audio output under high-power conditions, breaking through the power density limitations of existing technologies. This invention employs a main power MOSFET series main power supply circuit design, with a mechanically triggered switch directly controlling the MOSFET's on / off state. This achieves complete disconnection of the main circuit in the power-off state, eliminating any standby current loss. The auxiliary power supply unit provides stable drive for the MOSFET, preventing conduction / cutoff anomalies caused by insufficient drive. The gate pull-down protection unit ensures reliable cutoff of the MOSFET when the trigger signal is disconnected, preventing leakage current. Multiple sets of parallel redundant trigger switches enhance trigger reliability under vibration environments. These multiple safeguards enable power management to achieve zero standby power consumption while possessing excellent anti-interference capabilities and stability, making it suitable for complex automotive power environments. This invention utilizes a recessed SMT fully integrated interface, enabling all interface terminals to be SMT-mounted to the PCB in a single process, achieving full automation of production, significantly improving product consistency, and reducing production costs. The screwless RF shielding structure, through trapezoidal groove sliding and snap-locking, allows for tool-free assembly and disassembly. Maintenance is achieved simply by sliding to unlock the shielding cover, greatly simplifying the maintenance process and addressing the pain points of existing technologies: low production efficiency and high maintenance costs. This invention achieves equipotential interconnection of four PCB ground layers through a multi-point equipotential grounding topology, which is then connected to the grounding terminal of the copper substrate to form a unified grounding reference plane, eliminating interference caused by ground potential differences. Combined with a screwless RF shielding cover and grounding conductive foam, a fully enclosed RF shielding loop is formed, effectively blocking external electromagnetic interference while suppressing electromagnetic radiation from the internal power circuit. The interface integrates overvoltage, overcurrent, and electrostatic discharge protection circuits, further enhancing environmental adaptability. The entire design enables the power amplifier to operate stably under harsh conditions such as strong electromagnetic fields, vibration, and temperature variations in automotive environments, solving the core pain point of "poor environmental adaptability."

[0018] To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. Attached Figure Description

[0019] Figure 1 This is a block diagram of the overall architecture of the present invention; Figure 2 This is a connection block diagram of the zero standby power management module of the present invention; Figure 3 This is a connection block diagram of the recessed SMT fully integrated interface subunit of the present invention; Figure 4 This is a connection block diagram of the digital signal processing and control unit of the present invention; Figure 5 This is a connection block diagram of the thermal matching impedance adjustment unit of the present invention; Figure 6 This is a connection block diagram of the mechanically triggered switch unit of the present invention; Figure 7 This is a connection block diagram of the radio frequency shielding cover body of the present invention; Figure 8 This is a connection block diagram of the multi-point equipotential grounding topology module of the present invention.

[0020] In the diagram: 1. Main unit; 11. Signal processing link module; 111. Interface and electrical protection unit; 1111. Recessed SMT fully integrated interface subunit; 112. Digital signal processing and control unit; 1121. Audio decoding subunit; 1122. Digital filtering subunit; 1123. Preamplifier subunit; 1124. Audio effects processing subunit; 12. Power amplification link module; 121. Power amplification drive unit; 122. Power distribution and power loop unit; 123. Class D power amplification chipset; 13. Thermoelectric integrated substrate module; 131. High thermal conductivity copper substrate unit; 132. Chip sintering thermally conductive solder layer Units: 133, Thermal Matching Impedance Adjustment Unit; 1331, NTC Thermistor Subunit; 1332, Surface Mount Capacitor Subunit; 14, Zero Standby Power Management Module; 141, Mechanical Trigger Switch Unit; 1411, Gold-Plated Spring Pin Trigger Circuit Subunit; 142, Main Power MOSFET Switch Unit; 143, Gate Pull-Down Protection Unit; 144, Auxiliary Power Supply Unit; 15, Multi-Point Equipotential Grounding Topology Module; 16, Screwless RF Shielding Grounding Assembly; 161, RF Shielding Cover Body; 162, Board Edge Trapezoidal Sliding Groove Assembly; 163, Elastic Buckle Assembly; 164, Grounding Conductive Foam Assembly; 17, Laser Welded Ring Interconnect Assembly. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0022] The specific implementation of the present invention will be described in detail below with reference to specific embodiments.

[0023] like Figure 1-8 As shown, this embodiment of the invention provides a miniature highly integrated digital power amplifier for extreme space applications, including a main body 1. The main body 1 includes a signal processing link module 11, a power amplification link module 12, a thermo-electric integrated substrate module 13, and a zero standby power management module 14. The signal processing link module 11 and the power amplification link module 12 construct a top-down hierarchical electrical integration topology through a four-layer functional PCB. The four-layer functional PCB and the high thermal conductivity copper substrate unit 131 of the thermo-electric integrated substrate module 13 form a sandwich-style integrated architecture. The sandwich-style integrated architecture vertically penetrates four functional PCBs through multiple sets of laser-bonded ring interconnect components 17, realizing the electrical interconnection and structural fixation of inter-layer signal links, power circuits, and grounding circuits; The Class D power amplifier chip 123 of the power amplifier link module 12 is sintered and integrated on the upper surface of the high thermal conductivity copper substrate unit 131, and the signal pins of the Class D power amplifier chip 123 are electrically connected to the pads of the corresponding functional PCB. The signal terminal of the zero standby power management module 14 is electrically connected to the control terminal of the signal processing link module 11, and the power terminal of the zero standby power management module 14 is connected in series with the main power supply circuit of the whole machine.

[0024] In this embodiment, addressing the shortcomings of the prior art such as "insufficient integration and contradiction between size and power," a sandwich stack of four-layer PCB + copper substrate is used to vertically integrate signal processing, power amplification, and power distribution functions, thereby completely compressing the overall size and adapting to extremely small spaces. The laser bonding ring not only achieves low-impedance electrical interconnection between layers but also replaces additional fasteners to achieve structural fixation, further reducing the size. The chip is sintered on the copper substrate, which builds a low-resistance heat dissipation path while achieving high-density integration, providing a foundation for high-power output and solving the pain point that "small size cannot sustain high power output."

[0025] Specifically, the four-layer functional PCB consists of, from top to bottom, an interface and electrical protection unit 111, a digital signal processing and control unit 112, a power amplifier and drive unit 121, and a power distribution and power circuit unit 122. The high thermal conductivity copper substrate unit 131 is bonded and integrated on the lower surface of the power distribution and power circuit unit 122; The laser-welded ring interconnection assembly 17 is vertically arranged along the corresponding nodes of the signal link, power circuit, and grounding circuit to achieve low-impedance interconnection of corresponding electrical nodes between layers.

[0026] In this embodiment, addressing the shortcomings of the prior art such as "long signal links and large electromagnetic interference," a layered layout is adopted according to the flow direction of "signal input-processing-driving-power output" to achieve the shortest signal transmission path and reduce signal attenuation and crosstalk. The interface protection unit is layered separately, and protection circuits can be integrated in a targeted manner to improve the interface's anti-interference capability. The power loop unit is directly bonded to the copper substrate to shorten the power transmission path and reduce losses. The laser welding ring is precisely deployed along the signal, power, and ground nodes to avoid loop cross-interference and solve the pain point of "power and signal loop crosstalk."

[0027] Specifically, the Class D power amplifier chipset 123 is disposed between the power distribution and power loop unit 122 and the high thermal conductivity copper substrate unit 131; The power output terminal of the Class D power amplifier chipset 123 is electrically connected to the power circuit pad of the power distribution and power circuit unit 122, and the signal input terminal of the Class D power amplifier chipset 123 is bonded to the output terminal of the drive circuit of the power amplifier drive unit 121.

[0028] In this embodiment, to address the deficiency of "high distortion at high power output" in the prior art, the chip mounting layout allows the power output terminal to directly connect to the underlying power circuit, resulting in an extremely short high-current transmission path, effectively reducing line impedance and loss, and minimizing power signal distortion. The drive signal is connected by gold wire bonding, resulting in low transmission loss and fast response speed, ensuring that the drive signal accurately controls the chip's operation. The chip is also tightly connected to both the power circuit and the copper substrate, achieving synergistic optimization of electrical and heat dissipation performance, further reducing distortion under high-power conditions.

[0029] Specifically, the thermo-electric integrated substrate module 13 includes a high thermal conductivity copper substrate unit 131, a chip sintering thermally conductive solder layer unit 132, and a thermal matching impedance adjustment unit 133. The chip sintering thermally conductive solder layer unit 132 is disposed between the Class D power amplifier chip group 123 and the high thermal conductivity copper substrate unit 131 to realize thermal coupling and grounding connection between the Class D power amplifier chip group 123 and the high thermal conductivity copper substrate unit 131. The thermal matching impedance adjustment unit 133 is connected in parallel with the power supply terminal of the Class D power amplifier chipset 123.

[0030] In this embodiment, addressing the shortcomings of the prior art's "thermal-electrical design disconnect," the chip is directly thermally coupled to the copper substrate through a sintered solder layer, eliminating the thermal resistance of intermediate media such as the PCB insulation layer and thermal pads. Heat is rapidly conducted to the copper substrate, solving the "temperature rise problem caused by high integration." The thermal matching impedance adjustment unit 133 is connected in parallel with the chip's power supply terminal, which can sense the chip's temperature rise in real time and adjust the impedance to compensate for the chip parameter drift caused by the temperature rise. This achieves integrated matching of thermal and electrical characteristics, solving the pain point of "increased distortion due to temperature rise."

[0031] Specifically, the zero standby power management module 14 includes a mechanically triggered switching unit 141, a main power MOSFET switching unit 142, a gate pull-down protection unit 143, and an auxiliary power supply unit 144. The signal output terminal of the mechanically triggered switching unit 141 is electrically connected to the control electrode of the main power MOSFET switching unit 142, and the auxiliary power supply unit 144 provides a stable driving voltage for the mechanically triggered switching unit 141 and the main power MOSFET switching unit 142. The power circuit of the main power MOSFET switching unit 142 is connected in series with the main power supply input circuit of the whole machine; The gate pull-down protection unit 143 is connected to ground in parallel with the control electrode of the main power MOSFET switching unit 142.

[0032] In this embodiment, to address the deficiency of "standby current loss" in the prior art, the main power MOSFET is connected in series in the main power supply circuit, and the mechanical trigger switch directly controls the switching on and off of the MOSFET, thereby completely disconnecting the main circuit instead of just controlling the standby circuit, thus completely eliminating standby current; the auxiliary power supply unit 144 provides a stable drive voltage for the MOSFET gate, avoiding incomplete conduction or incomplete cutoff of the MOSFET due to insufficient drive; the gate pull-down protection unit 143 ensures that the MOSFET gate is reliably grounded when the trigger signal is disconnected, further preventing leakage current, solving the pain point of "long-term standby power loss", and improving the power management anti-interference capability.

[0033] Specifically, the interface and electrical protection unit 111 integrates a recessed SMT fully integrated interface subunit 1111; The recessed SMT fully integrated interface subunit 1111 includes a power input interface, an audio input interface, and a speaker output interface. All interface terminals are soldered to the corresponding pads of the interface and the electrical protection unit 111 and are electrically connected by SMT mounting in one go. The top surface of the interface terminals does not extend beyond the upper surface of the interface and the electrical protection unit 111.

[0034] In this embodiment, addressing the shortcomings of the prior art such as "manual soldering and poor consistency," all interface terminals are SMT mounted to the PCB in one go, eliminating the need for manual post-soldering, achieving full automation of production, and significantly improving product consistency. The recessed layout prevents the terminals from protruding from the PCB surface, thus not occupying stacking height, further compressing the overall size and adapting to installation in extreme spaces. The interface unit integrates overvoltage, overcurrent, and electrostatic protection circuits, improving the interface's environmental adaptability and solving the pain point of "interfaces being prone to failure in harsh automotive environments."

[0035] Specifically, the digital signal processing and control unit 112 integrates an audio decoding subunit 1121, a digital filtering subunit 1122, a preamplifier subunit 1123, and an audio effects processing subunit 1124 that are connected in sequence. The input terminal and interface of the audio decoding subunit 1121 are electrically connected to the audio output terminal of the electrical protection unit 111; The output of the audio processing subunit 1124 is electrically connected to the input of the drive circuit of the power amplifier drive unit 121 through the laser bonding ring interconnect component 17.

[0036] In this embodiment, to address the shortcomings of the prior art where "analog signal transmission suffers from significant interference," full-link digital processing of the audio signal is achieved. Decoding, filtering, amplification, and sound effect optimization are all completed in the digital domain, avoiding interference and loss caused by long-distance analog signal transmission. The processed signal is vertically transmitted to the drive unit via a laser welding ring, resulting in a short path and low loss, ensuring the accuracy of the drive signal, further improving the fidelity of the audio output, and solving the pain point of "signal interference causing a decline in sound quality."

[0037] Specifically, the thermal matching impedance adjustment unit 133 includes multiple sets of parallel NTC thermistor subunits 1331 and surface mount capacitor subunits 1332. The NTC thermistor subunits 1331 are directly attached to the surface of the Class D power amplifier chip group 123 and are thermally coupled to the Class D power amplifier chip group 123. The resistance value of the NTC thermistor subunits 1331 changes synchronously with the temperature rise of the Class D power amplifier chip group 123.

[0038] In this embodiment, addressing the deficiency of "parameter drift caused by chip temperature rise" in the background technology, the NTC thermistor is directly attached to the chip body, enabling accurate and real-time sensing of core chip temperature changes, rather than indirectly detecting the copper substrate temperature, thus avoiding temperature detection lag. The resistance value changes synchronously with the temperature rise, and the input impedance of the chip power supply terminal is adjusted in real time through a parallel network to compensate for changes in the on-resistance of the power transistor and fluctuations in output power, stabilizing the chip's static operating point and ensuring that the output distortion remains at a low level under high power conditions, thus solving the pain point of "poor stability caused by temperature rise fluctuations".

[0039] Specifically, the mechanically triggered switching unit 141 includes at least two sets of gold-plated spring pin trigger circuit sub-units 1411 connected in parallel. The conduction state of the gold-plated spring pin trigger circuit sub-unit 1411 corresponds one-to-one with the conduction state of the main power MOSFET switching unit 142, and the disconnection state of the gold-plated spring pin trigger circuit sub-unit 1411 corresponds one-to-one with the cutoff state of the main power MOSFET switching unit 142.

[0040] In this embodiment, to address the deficiency of "insufficient reliability of trigger switches" in the background technology, the redundant design of multiple parallel circuits avoids the failure of the entire device due to a single trigger circuit failure, thus improving the trigger stability under vehicle vibration environment; the gold-plated spring pin has excellent conductivity and wear resistance, extending its service life; the physical on / off state directly corresponds to the MOSFET state, the control logic is simple and reliable, and there is no need for complex electronic control circuits, reducing failure points and solving the pain point of "trigger failure leading to abnormal power management".

[0041] Specifically, the main body 1 also includes a screwless radio frequency shielding grounding assembly 16; The screwless radio frequency shielding grounding assembly 16 includes a radio frequency shielding cover body 161, a trapezoidal sliding groove assembly 162, an elastic buckle assembly 163, a grounding conductive foam assembly 164, and a multi-point equipotential grounding topology module 15. Trapezoidal sliding grooves 162 are symmetrically opened on both sides of the four-layer functional PCB. The two sides of the radio frequency shielding cover body 161 are provided with trapezoidal convex rails that match the trapezoidal sliding groove group 162 on the plate edge, and the trapezoidal convex rails slide in cooperation with the trapezoidal sliding groove group 162 on the plate edge. The elastic buckle assembly 163 is respectively set at the end of the RF shielding cover body 161 and the corresponding position of the four-layer functional PCB to realize the self-locking fixation of the RF shielding cover body 161 and the four-layer functional PCB. The grounding conductive foam assembly 164 is fixed to the inner wall of the radio frequency shielding cover body 161 and abuts against the grounding pad of the multi-point equipotential grounding topology module 15. The multi-point equipotential grounding topology module 15 achieves equipotential interconnection of the four functional PCB grounding layers through the laser bonding ring interconnection component 17, and is electrically connected to the grounding terminal of the high thermal conductivity copper substrate unit 131.

[0042] In this embodiment, addressing the shortcomings of the prior art such as "screw-fixed shielding structure and poor electromagnetic compatibility," a screwless sliding fit + snap-lock design allows for tool-free assembly and disassembly, simplifying production and maintenance processes and solving the pain point of "cumbersome screw-fixed assembly." A multi-point equipotential grounding topology achieves equipotential interconnection of the four PCB grounding layers through laser welding rings, and then connects to the copper substrate grounding terminal to form a unified grounding reference plane, avoiding interference caused by ground potential differences. Grounding conductive foam ensures a reliable connection between the shielding cover and the grounding topology, forming a fully enclosed RF shielding loop that effectively suppresses strong electromagnetic interference in vehicles and internal electromagnetic radiation, solving the pain point of "electromagnetic interference causing signal abnormalities."

[0043] Working principle and usage process of this invention: This invention is based on a sandwich-style vertical integration architecture of a four-layer functional PCB and a high thermal conductivity copper substrate. It achieves low-impedance electrical interconnection and structural fixation between layers through laser bonding ring interconnect components 17. Combined with the collaborative design of full-link digital audio processing, NTC negative temperature coefficient thermal-electric dynamic matching, low-power auxiliary power supply zero standby power management, copper substrate unique ground plane equipotential grounding, and screwless anti-loosening RF shielding, it achieves high-power low-distortion audio output within an extreme volume of ≤100mm width and ≤30mm thickness, perfectly adapting to extreme vehicle installation conditions such as motorcycles and new energy intelligent cockpits.

[0044] The main body 1 comprises a signal processing link module 11, a power amplification link module 12, a thermo-electric integrated substrate module 13, a zero-standby power management module 14, a multi-point equipotential grounding topology module 15, a screwless RF shielding grounding component 16, and a laser-bonded ring interconnection component 17, all organically linked around the principles of "signal processing, power amplification, thermal management, power control, electromagnetic shielding, and interlayer interconnection." The signal processing link module 11 provides low-interference digital audio signals for power amplification; the power amplification link module 12 achieves high-power signal amplification; the thermo-electric integrated substrate module 13 addresses the temperature rise and parameter drift issues of the power chip; the zero-standby power management module 14 achieves stable power supply control and zero power consumption during shutdown; the multi-point equipotential grounding topology module 15 and the screwless RF shielding grounding component 16 construct the electromagnetic compatibility protection system for the entire device; and the laser-bonded ring interconnection component 17 provides hardware interconnection and structural support for the collaborative operation of all modules. The core working principles of each module and the overall usage process are as follows: The core principle of the signal processing link module 11 is to adopt full-link digital processing logic to convert external analog / digital audio signals into standard digital signals and then perform decoding, filtering, amplification, and sound effect optimization. This completely avoids interference and loss during long-distance transmission of analog signals and provides a precise, low-noise signal source for power amplification.

[0045] Signal flow and operation of signal processing link module 11: External audio signals (analog / digital) are input to interface and electrical protection unit 111 through sunken SMT fully integrated interface subunit 1111. After being processed by overvoltage, overcurrent, and electrostatic protection circuits within the unit, they are transmitted to digital signal processing and control unit 112. If it is an analog audio signal, it is first sampled and quantized by the integrated ADC analog-to-digital conversion subunit within the unit and converted into a standard digital audio signal. If it is a digital audio signal, it directly enters audio decoding subunit 1121 for decoding. The decoded digital signal passes sequentially through digital filtering subunit 1122 (noise reduction and filtering of noise), preamplifier subunit 1123 (boosting the signal amplitude to a level suitable for Class D power amplifier drive), and sound effect processing subunit 1124 (equalization and sound field optimization). The processed low-level digital drive signal is vertically transmitted to power amplifier drive unit 121 through laser solder ring interconnect component 17. The signal transmission path is vertically arranged along the layered topology to minimize the transmission distance and reduce signal attenuation and crosstalk.

[0046] The core principle of the power amplifier link module 12 is based on the Class D power amplification principle. It adopts a hybrid connection method of "chip clamping layout + gold wire bonding small signal transmission + copper bus high current transmission" to achieve high current low loss and low distortion power signal amplification, which can meet the high power output requirements in a small volume.

[0047] The working process of the power amplifier link module 12 is as follows: The power amplifier drive unit 121 modulates the received low-level digital signal into a PWM drive signal (voltage is the standard drive level of Class D chip, 3~15V) adapted to the working frequency of the Class D power amplifier chipset 123; the PWM drive signal is transmitted to the signal input terminal of the Class D power amplifier chipset 123 through gold wire bonding. Gold wire bonding has the characteristics of low transmission loss and fast response speed, ensuring that the drive signal accurately controls the chip's on / off state; the Class D power amplifier chipset 123 amplifies the PWM drive signal into a high-power audio signal. The chipset is sandwiched between the power distribution and power loop unit 122 and the high thermal conductivity copper substrate unit 131. Its power output terminal is directly electrically connected to the copper bus pad of the power distribution and power loop unit 122, realizing short-path, low-impedance transmission of the 10A high-current signal, greatly reducing line loss and power signal distortion; the amplified high-power audio signal is distributed by the power distribution and power loop unit 122 and transmitted to the vehicle speaker through the speaker output interface of the recessed SMT fully integrated interface subunit 1111.

[0048] The core principle of the thermo-electric integrated substrate module 13 is to achieve an integrated design of low heat resistance conduction and real-time negative feedback compensation for temperature rise, solve the problem of chip temperature rise under high integration and high power, and at the same time accurately compensate for the parameter drift of the chip caused by temperature rise, stabilize the chip's static operating point, and ensure low distortion output.

[0049] Working process of the thermo-electric integrated substrate module 13: Low-resistance heat dissipation path construction: The Class D power amplifier chip group 123 is directly thermally coupled and electrically grounded to the high thermal conductivity copper substrate unit 131 through the conductive and thermally conductive chip sintered thermally conductive solder layer unit 132. The sintered solder layer is a silver-based conductive and thermally conductive material, eliminating the intermediate medium thermal resistance of traditional insulating thermal pads. The heat generated by the chip operation is quickly conducted to the high thermal conductivity copper substrate unit 131 and rapidly diffused through the large area of ​​the copper substrate, avoiding excessive local temperature rise of the chip; Thermo-electric dynamic matching compensation: The NTC thermistor subunit 1331 of the thermal matching impedance adjustment unit 133 is directly attached to the surface of the Class D power amplifier chip group 123 and thermally coupled to the chip core, sensing the chip temperature rise in real time and accurately (without copper substrate conduction hysteresis); the NTC thermistor is With a negative temperature coefficient, the resistance decreases synchronously with the chip temperature rise. Multiple NTCs and surface-mount capacitor subunits 1332 are connected in parallel to the power supply terminal of the Class D power amplifier chipset 123. When the chip temperature rises, the NTC resistance decreases, the total impedance of the parallel network decreases, and the input current of the chip power supply terminal is dynamically fine-tuned. This accurately compensates for parameter drift problems such as changes in the on-resistance and output power fluctuations caused by the temperature rise, stabilizing the chip's static operating point. The surface-mount capacitor subunit 1332 also realizes the filtering and voltage regulation of the power supply circuit, avoiding interference of current fluctuations on the audio signal. When the chip temperature rises back to the normal operating temperature, the NTC resistance returns to its initial value, the parallel network impedance returns to normal, and the current of the chip power supply terminal stabilizes, forming a negative feedback stable closed loop of "temperature rise - impedance reduction - current fine-tuning - parameter compensation - temperature rise drop".

[0050] The core principle of the zero standby power management module 14 is: adopting the design of "low power auxiliary power drive + physical interruption of main power MOSFET + gate pull-down reliable protection". The main power MOSFET is connected in series in the main power supply circuit of the whole machine. The main circuit is completely switched on and off through mechanical triggering, so as to truly achieve zero standby power consumption in the power-off state.

[0051] The working process of the zero standby power management module 14: The core of the module consists of a mechanically triggered switching unit 141, a main power MOSFET switching unit 142, a gate pull-down protection unit 143, and a low-power auxiliary power supply unit 144. The auxiliary power supply unit 144 is a low-power type with a static power consumption of ≤0.5μA. It is designed to provide a stable gate drive voltage for the mechanically triggered switching unit 141 and the main power MOSFET switching unit 142, without the need for an additional coin cell battery. Power-on conduction: The mechanically triggered switching unit 141 consists of at least two sets of gold-plated spring pin trigger circuit sub-units 1411 connected in parallel (redundant design to improve reliability under vehicle vibration conditions). When subjected to physical triggering (such as vehicle cabin assembly compression or external linkage mechanism triggering), the trigger circuit is turned on and outputs a high level to the control electrode (gate) of the main power MOSFET switching unit (142). The main power MOSFET is turned on, the main power supply circuit of the whole machine is connected, and the auxiliary power supply unit (144) switches to normal drive mode to provide a stable working voltage for all modules of the whole machine. Power-off interruption: When the physical trigger of the mechanically triggered switching unit (141) is released, the trigger circuit is disconnected, the control electrode of the main power MOSFET switching unit (142) loses its high level, and the gate pull-down protection unit (143 (high resistance resistor) reliably grounds its gate, ensuring that the main power MOSFET is completely cut off. The main power supply circuit of the whole machine is physically disconnected, with no leakage current. At this time, the auxiliary power supply unit (144) returns to the low-power standby mode, providing only microampere-level drive for the trigger circuit. The standby current of the whole machine is <1μA, achieving true zero standby power consumption and avoiding vehicle battery depletion. The redundant design of multiple sets of gold-plated spring pins in parallel avoids the failure of a single trigger circuit to prevent the whole machine from being unable to switch on or off. The gold plating process improves the conductivity and wear resistance of the contacts, making it suitable for the harsh working conditions of long-term vibration and dust in the vehicle.

[0052] The core principle of the multi-point equipotential grounding topology module 15 is to use the high thermal conductivity copper substrate unit 131 as the only grounding reference surface of the whole machine, and to realize the equipotential interconnection of the four functional PCB grounding layers through the laser bonding ring interconnection component 17, thereby eliminating signal crosstalk caused by ground potential difference and quickly dissipating noise interference, providing a basic guarantee for electromagnetic compatibility.

[0053] The working process of the multi-point equipotential grounding topology module 15: The grounding layers of the interface and electrical protection unit 111, digital signal processing and control unit 112, power amplifier drive unit 121, and power distribution and power circuit unit 122 of the four-layer functional PCB are all short-circuited to the grounding terminal of the high thermal conductivity copper substrate unit 131 through the solid solder ring of the array-type laser solder ring interconnection component 17; the high thermal conductivity copper substrate unit 131 is a low impedance equipotential body, so that the circuit of each layer of the whole machine has a unified grounding reference surface, completely eliminating the signal crosstalk and electromagnetic interference problems caused by ground potential difference; the Class D power amplifier chip group 123 is connected to the grounding terminal of the copper substrate through the conductive and thermally conductive sintered solder layer unit, and the noise and interference signals of all modules of the whole machine are quickly discharged to the vehicle grounding terminal through the large area of ​​metal cladding on the copper substrate, which has the dual functions of grounding and noise suppression.

[0054] The core principle of the laser bonding ring interconnect component 17 is to use the vertical bus principle of array-type laser bonding rings to replace traditional connectors and fasteners. At the same time, it realizes low impedance electrical interconnection and structural fixation of four-layer functional PCB + high thermal conductivity copper substrate, with no volume redundancy, and is suitable for extreme space design.

[0055] Working process of laser bonding ring interconnection component 17: Laser bonding ring interconnection component 17 is a solid laser bonding ring structure with a diameter of 0.5mm. It vertically penetrates the four-layer functional PCB and the high thermal conductivity copper substrate unit 131. It is arranged in an array along the corresponding nodes of the signal link, power loop and ground loop, without loop cross interference. The cross-sectional area of ​​the laser bonding ring is more than 10 times that of the traditional surface mount pad, with a contact resistance of ≤0.005Ω, meeting the low impedance high current transmission requirements of the 10A power circuit, while achieving low loss transmission of the signal link; the array-type laser bonding ring provides mechanical fixing strength for the sandwich architecture of the four-layer PCB + copper substrate while realizing electrical interconnection. The welding bonding force between the bonding ring and the PCB and copper substrate meets the structural requirements of the vehicle vibration condition, eliminating the need for additional screws, clips and other fasteners, and completely compressing the overall size of the device.

[0056] The core principle of the screwless RF shielding grounding assembly 16 is: adopting the design of "trapezoidal sliding fit + elastic buckle anti-loosening + grounding conductive foam closed loop", which can be assembled and disassembled without tools. At the same time, it forms a fully enclosed RF shielding loop, effectively blocking strong electromagnetic interference in the vehicle and suppressing electromagnetic radiation of the internal power circuit.

[0057] Working process of the screwless RF shielding grounding assembly 16: Screwless assembly and anti-loosening: The trapezoidal raised rails on both sides of the RF shielding cover body 161 slide and engage with the trapezoidal sliding grooves 162 on both sides of the four-layer functional PCB. During assembly, push it in along the sliding groove, and the elastic buckle assembly 163 at the end of the RF shielding cover body 161 and the corresponding position on the PCB will automatically engage. The buckle has an anti-loosening protrusion design to prevent loosening caused by long-term vibration in the vehicle. During disassembly, simply press the buckle to unlock and pull it out along the sliding groove without any tools. RF shielding circuit construction: The grounding conductive foam assembly 164 fixed on the inner wall of the RF shielding cover body 161 and the multi-point equipotential grounding topology module 15 The grounding pads are tightly abutted, forming a closed RF shielding loop between the RF shielding cover body 161 and the only grounding reference surface of the high thermal conductivity copper substrate unit 131. The shielding cover has a hollowed-out reserved interface structure, reserving wiring space for the recessed SMT fully integrated interface subunit 1111. While not affecting the use of the interface, it forms a fully enclosed shield for the core circuit area of ​​the whole machine, effectively blocking the intrusion of RF interference and electromagnetic radiation in the vehicle environment, and suppressing the outward diffusion of electromagnetic radiation from the internal power circuit, thus improving the electromagnetic compatibility performance of the whole machine. The grounding conductive foam has good conductivity and elasticity, which can compensate for the assembly gap between the PCB and the shielding cover, ensuring a reliable connection of the shielding loop.

[0058] This amplifier's usage process is fully adapted to the extreme installation and usage conditions of motorcycles and new energy intelligent cockpits. The entire process requires no manual operation; it is automatically triggered through vehicle assembly and cockpit linkage. The specific process is as follows: Assembly trigger power-on: When the power amplifier is installed to the vehicle limit installation position, the installation housing / cabin linkage mechanism physically squeezes the gold-plated spring pin of the mechanical trigger switch unit (141), the trigger circuit is turned on, the gate of the main power MOSFET switch unit (142) is high level and turned on, the main power supply circuit of the whole machine is connected, the low power auxiliary power supply unit (144) switches to normal drive mode to supply power to all modules, and the whole machine enters the working standby state; Signal Input and Processing: The audio signal (analog / digital) of the vehicle audio host is input to the interface and electrical protection unit (111) through the recessed SMT fully integrated interface. After protection processing, it enters the signal processing link module (11) to complete the full-link digital processing (decoding, filtering, preamplification, sound effect optimization) and outputs a precise digital drive signal. Power amplification and playback: The drive signal is transmitted to the power amplification drive unit (121) via the laser bonding ring interconnect component (17), modulated into a PWM drive signal, and then transmitted to the Class D power amplifier chipset (123) via gold wire bonding. The chipset amplifies the signal into a high-power audio signal, which is transmitted to the vehicle speaker via the copper bus power circuit to realize audio playback. Real-time thermal management compensation: During power amplification, the heat generated by the Class D power amplifier chipset (123) is quickly conducted to the high thermal conductivity copper substrate and diffused through the conductive and thermally conductive sintered solder layer; the NTC thermistor senses the chip temperature rise in real time and dynamically compensates for chip parameter drift through the change of parallel impedance to ensure low distortion output under high power conditions. Electromagnetic compatibility protection: During the operation of the whole machine, the multi-point equipotential grounding topology module (15) eliminates ground potential difference interference, and the noise signal is quickly discharged through the copper substrate; the screwless radio frequency shielding grounding component (16) forms a closed shielding loop to block external electromagnetic interference, suppress internal radiation, and ensure stable audio signal. Disassembly / Power-off shutdown: When the power amplifier is disassembled from the installation position or the vehicle cabin linkage mechanism is released from pressure, the physical trigger of the mechanical trigger switch unit (141) is released, the trigger circuit is disconnected, the main power MOSFET is completely cut off after gate pull-down protection, and the main power supply circuit of the whole machine is physically disconnected; the auxiliary power supply unit (144) returns to the low power consumption mode, the standby current of the whole machine is <1μA, realizing zero standby power consumption and eliminating the risk of vehicle battery depletion; Maintenance Operation: If full unit maintenance is required, gently press the elastic buckle to unlock the RF shielding cover, and pull it out along the trapezoidal sliding groove to open the shielding cover without tools; after maintenance, push the shielding cover back in along the sliding groove, and the buckle will automatically engage to complete the reinstallation, which is suitable for vehicle-mounted rapid maintenance needs.

[0059] The circuits, electronic components, and modules involved are all existing technologies, which can be fully implemented by those skilled in the art, and need not be elaborated upon. The content protected by this invention does not involve any improvement to the software and methods.

[0060] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A miniature, highly integrated digital power amplifier for extreme space applications, characterized in that: The device includes a main body (1), which includes a signal processing link module (11), a power amplification link module (12), a thermo-electric integrated substrate module (13), and a zero standby power management module (14). The signal processing link module (11) and the power amplification link module (12) construct a top-down layered electrical integration topology through a four-layer functional PCB. The four-layer functional PCB and the high thermal conductivity copper substrate unit (131) of the thermo-electric integrated substrate module (13) form a sandwich-style integrated architecture. The sandwich-style integrated architecture vertically penetrates four functional PCBs through multiple sets of laser-bonded ring interconnect components (17), realizing the electrical interconnection and structural fixation of interlayer signal links, power circuits, and grounding circuits; The Class D power amplifier chip group (123) of the power amplifier link module (12) is sintered and integrated on the upper surface of the high thermal conductivity copper substrate unit (131), and the signal pins of the Class D power amplifier chip group (123) are electrically connected to the pads of the corresponding functional PCB. The signal terminal of the zero standby power management module (14) is electrically connected to the control terminal of the signal processing link module (11), and the power terminal of the zero standby power management module (14) is connected in series to the main power supply circuit of the whole machine.

2. The miniature high-integration digital power amplifier for extreme space applications according to claim 1, characterized in that: The four-layer functional PCB consists of, from top to bottom, an interface and electrical protection unit (111), a digital signal processing and control unit (112), a power amplifier and drive unit (121), and a power distribution and power circuit unit (122). The high thermal conductivity copper substrate unit (131) is bonded and integrated on the lower surface of the power distribution and power circuit unit (122); The laser welding ring interconnection component (17) is vertically arranged along the corresponding nodes of the signal link, power circuit and grounding circuit to realize low impedance interconnection of corresponding electrical nodes between layers.

3. The miniature high-integration digital power amplifier for extreme space applications according to claim 1, characterized in that: The Class D power amplifier chipset (123) is disposed between the power distribution and power loop unit (122) and the high thermal conductivity copper substrate unit (131); The power output terminal of the Class D power amplifier chip group (123) is electrically connected to the power circuit pad of the power distribution and power circuit unit (122), and the signal input terminal of the Class D power amplifier chip group (123) is bonded to the output terminal of the drive circuit of the power amplifier drive unit (121).

4. A miniature high-integration digital power amplifier for extreme space applications according to claim 1, characterized in that: The thermo-electric integrated substrate module (13) includes a high thermal conductivity copper substrate unit (131), a chip sintering thermally conductive solder layer unit (132), and a thermal matching impedance adjustment unit (133). The chip sintering thermally conductive solder layer unit (132) is disposed between the Class D power amplifier chip group (123) and the high thermal conductivity copper substrate unit (131) to realize thermal coupling and grounding connection between the Class D power amplifier chip group (123) and the high thermal conductivity copper substrate unit (131). The thermal matching impedance adjustment unit (133) is connected in parallel with the power supply terminal of the Class D power amplifier chip group (123).

5. A miniature high-integration digital power amplifier for extreme space applications according to claim 1, characterized in that: The zero standby power management module (14) includes a mechanically triggered switching unit (141), a main power MOSFET switching unit (142), a gate pull-down protection unit (143), and an auxiliary power supply unit (144). The signal output terminal of the mechanically triggered switching unit (141) is electrically connected to the control electrode of the main power MOSFET switching unit (142), and the auxiliary power supply unit (144) provides a stable driving voltage for the mechanically triggered switching unit (141) and the main power MOSFET switching unit (142). The power circuit of the main power MOSFET switching unit (142) is connected in series with the main power supply input circuit of the whole machine; The gate pull-down protection unit (143) is connected to ground in parallel with the control electrode of the main power MOS transistor switching unit (142).

6. A miniature high-integration digital power amplifier for extreme space applications according to claim 2, characterized in that: The interface and electrical protection unit (111) are integrated with a recessed SMT fully integrated interface subunit (1111). The recessed SMT fully integrated interface subunit (1111) includes a power input interface, an audio input interface, and a speaker output interface. All interface terminals are soldered to the corresponding pads of the interface and electrical protection unit (111) and are electrically connected by SMT mounting in one go. The top surface of the interface terminals does not extend beyond the upper surface of the interface and electrical protection unit (111).

7. A miniature high-integration digital power amplifier for extreme space applications according to claim 2, characterized in that: The digital signal processing and control unit (112) integrates an audio decoding subunit (1121), a digital filtering subunit (1122), a preamplifier subunit (1123), and a sound effect processing subunit (1124) that are connected in sequence. The input terminal and interface of the audio decoding subunit (1121) are electrically connected to the audio output terminal of the electrical protection unit (111); The output of the sound processing subunit (1124) is electrically connected to the input of the drive circuit of the power amplifier drive unit (121) through the laser welding ring interconnection component (17).

8. A miniature high-integration digital power amplifier for extreme space applications according to claim 4, characterized in that: The thermal matching impedance adjustment unit (133) includes multiple sets of parallel NTC thermistor subunits (1331) and surface-mount capacitor subunits (1332). The NTC thermistor subunit (1331) is directly attached to the surface of the Class D power amplifier chip group (123) and is thermally coupled to the Class D power amplifier chip group (123). The resistance value of the NTC thermistor subunit (1331) changes synchronously with the temperature rise of the Class D power amplifier chip group (123).

9. A miniature high-integration digital power amplifier for extreme space applications according to claim 5, characterized in that: The mechanically triggered switching unit (141) includes at least two sets of gold-plated spring pin trigger circuit subunits (1411) connected in parallel. The conduction state of the gold-plated spring pin trigger circuit subunit (1411) corresponds one-to-one with the conduction state of the main power MOSFET switching unit (142), and the disconnection state of the gold-plated spring pin trigger circuit subunit (1411) corresponds one-to-one with the cutoff state of the main power MOSFET switching unit (142).

10. A miniature high-integration digital power amplifier for extreme space applications according to claim 1, characterized in that: The main body (1) of the device also includes a screwless radio frequency shielding grounding assembly (16). The screwless radio frequency shielding grounding assembly (16) includes a radio frequency shielding cover body (161), a trapezoidal sliding groove assembly (162), an elastic buckle assembly (163), a grounding conductive foam assembly (164), and a multi-point equipotential grounding topology module (15). The trapezoidal sliding groove group (162) is symmetrically opened on both sides of the four-layer functional PCB. The radio frequency shielding cover body (161) has trapezoidal convex rails on both sides that match the trapezoidal sliding groove group (162) on the plate edge, and the trapezoidal convex rails slide in cooperation with the trapezoidal sliding groove group (162) on the plate edge. The elastic buckle assembly (163) is respectively disposed at the end of the RF shielding cover body (161) and the corresponding position of the four-layer functional PCB, so as to realize the self-locking fixation of the RF shielding cover body (161) and the four-layer functional PCB. The grounding conductive foam assembly (164) is fixed to the inner wall of the radio frequency shielding cover body (161) and abuts against the grounding pad of the multi-point equipotential grounding topology module (15). The multi-point equipotential grounding topology module (15) achieves equipotential interconnection of the four-layer functional PCB grounding layer through the laser bonding ring interconnection component (17), and is electrically connected to the grounding terminal of the high thermal conductivity copper substrate unit (131).

Images