Broad band gap perovskite solar cell based on bottom interface modification and preparation method thereof

Abstract

The application discloses a kind of wide band gap perovskite solar cell based on bottom interface modification and preparation method thereof, its device structure sequentially includes conductive substrate, hole transport layer, interface modification layer, perovskite functional layer, electron transport layer and metal electrode layer from bottom to top, wherein the interface modification layer contains trans-4-guanidyl cyclohexane carboxylic acid (t-GCHA) and its derivative additive.The wide band gap perovskite solar cell containing trans-4-guanidyl cyclohexane carboxylic acid and its derivative interface modification is obtained by spin-coating solution containing such additive on the hole transport layer to form interface modification layer, using the bifunctional group characteristics of guanidyl and carboxyl in molecule, the effective passivation to buried bottom interface defect and the optimization of energy level arrangement are realized, the film forming quality of perovskite film is improved, so that perovskite solar cell with excellent photoelectric performance is further prepared.The preparation process of the application is simple, low in cost, and helps the commercialization of perovskite solar cell.

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