A hot CVD reaction chamber embedded temperature sensor and a manufacturing method thereof

By embedding a single-crystal sapphire fiber Bragg grating sensor within the CVD reaction chamber, combined with composite packaging and ALD technology, the durability and accuracy issues of sensors in high-temperature CVD processes are solved, enabling stable and accurate high-temperature measurement and distributed monitoring.

CN122408992APending Publication Date: 2026-07-17SHANDONG UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANDONG UNIV
Filing Date
2026-06-11
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing temperature sensors lack durability and accuracy in high-temperature CVD processes. Traditional fiber Bragg grating sensors have low temperature resistance limits and poor demodulation accuracy. Their packaging structures cannot effectively prevent corrosion from corrosive gases, leading to a decline in long-term stability.

Method used

By employing a single-crystal sapphire fiber Bragg grating sensor, combined with a composite packaging structure and atomic layer deposition technology, a multi-scale protection system is constructed to achieve high-temperature stability and high-precision measurement of the sensor.

Benefits of technology

It achieves long-term stable operation in high-temperature environments above 1800℃ and in highly corrosive atmospheres, possesses high-precision temperature measurement capabilities, is immune to electromagnetic interference, provides distributed measurement capabilities, and improves the accuracy of process control.

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Abstract

本发明属于温度传感器技术领域,提供了一种热CVD反应室嵌入式温度传感器及制备方法。一种热CVD反应室嵌入式温度传感器包括复合封装结构、传感探头、CVD反应室和基片台;所述基片台设置在CVD反应室内;所述复合封装结构设置在所述传感探头的外部,用于保护所述传感探头;所述传感探头内置至少一个光纤布拉格光栅的单晶蓝宝石光纤,该单晶蓝宝石光纤为在多模蓝宝石光纤的纤芯内部通过飞秒激光加工形成的具有环形包层结构的单模波导光纤;所述基片台内部设置有用于容纳并固定所述传感探头的导槽。其能够实现对CVD工艺核心区域温度的原位、高精度、高稳定性测量。
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