A cryogenic photovoltaic infrared detector preamplifier and detector and method

By integrating a low-dropout linear regulator unit, a bandgap reference unit, and a current detection amplification unit, and combining an RGC current preamplifier structure with a dual amplifier clamping circuit, the problems of poor signal-to-noise ratio, limited bandwidth, and electromagnetic interference of infrared detectors in low-temperature environments are solved, and high-fidelity readout of weak photocurrent signals is achieved.

CN122456992APending Publication Date: 2026-07-24SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INSTITUTE OF TECHNICAL PHYSICS CHINESE ACADEMY OF SCIENCES
Filing Date
2026-04-17
Publication Date
2026-07-24

AI Technical Summary

Technical Problem

Existing infrared detectors suffer from poor signal-to-noise ratio, limited bandwidth, and bias drift in low-temperature environments, and are also severely affected by electromagnetic interference, making it difficult to achieve high-fidelity readout of weak photocurrent signals.

Method used

It employs a low-dropout linear regulator unit, a bandgap reference unit, and a current detection amplification unit, combined with an RGC current preamplifier structure and a dual amplifier clamping circuit, all integrated inside a low-temperature Dewar to achieve high-fidelity signal readout.

Benefits of technology

It achieves high signal-to-noise ratio, low noise, low heat leakage, and multi-channel parallel readout in low-temperature environments, making it suitable for extremely sensitive infrared detection systems.

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Abstract

The present application relates to the field of infrared detector front-end readout, and particularly relates to a low-temperature photovoltaic infrared detector preamplifier, which comprises a low-dropout linear voltage regulator unit, a bandgap reference unit and a current detection and amplification unit. The low-dropout linear voltage regulator unit supplies power to the current detection and amplification unit. The bandgap reference unit is connected to the low-dropout linear voltage regulator unit and the current detection and amplification unit, and generates a temperature-independent reference voltage. The input end of the current detection and amplification unit is connected to an infrared detector, and is used to output an amplified voltage signal; the current detection and amplification unit is also used to clamp the potential across the infrared detector to a near-zero bias state, and suppresses dark current and noise. The present application also comprises a detector and a method. The present application has high integration and low heat leakage, and is stable at low temperature. The amplification circuit has low noise and high linearity, low input impedance and high bandwidth, flexible gain configuration and multi-channel parallel readout, and significantly improves the signal-to-noise ratio and dynamic range of the infrared detection system.
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