A reverse-parallel thyristor module and solid-state recloser

Abstract

The application discloses a kind of anti-parallel thyristor module and solid-state recloser, it is related to electric power equipment field, including at least one package, the package includes: metal substrate;Insulating substrate, the insulating substrate is arranged on the metal substrate;First thyristor chip and second thyristor chip, both are bare chip and are arranged on the insulating substrate;Flexible conductive interconnection structure, the first thyristor chip and the second thyristor chip are connected in anti-parallel mode by the flexible conductive interconnection structure;Lead-out structure, it is electrically connected with the first thyristor chip and the second thyristor chip and forms the interface for connecting outside;Wherein, the flexible conductive interconnection structure is configured to compensate the mechanical stress generated by thermal expansion difference during thermal cycle of the package.The application has the advantages of high packaging reliability, light structure.

Description

Technical Field

[0001] This invention relates to the field of power equipment, specifically to an anti-parallel thyristor module and a solid-state recloser. Background Technology

[0002] Thyristors are high-power semiconductor switching devices characterized by high voltage withstand capability, strong current carrying capacity, and low power consumption, making them widely used in power transmission and distribution, industrial control, and power electronic devices. For AC circuits, since a single thyristor can only achieve unidirectional conduction, two thyristors are typically connected in anti-parallel to form an anti-parallel thyristor structure to achieve bidirectional conduction control of the AC current. Anti-parallel thyristor modules, as integrated power devices, typically include a power chip, an insulating substrate, conductive interconnect structures, and external lead-out structures. They can be applied in devices such as solid-state reclosers, AC voltage regulators, and reactive power compensation devices.

[0003] Most existing anti-parallel thyristor modules employ press-fit or rigid interconnect packaging structures. Specifically, thyristor devices are typically mechanically pressed and fixed using structures such as clamps, screws, and ceramic housings, and electrically connected via busbars or rigid connectors. Some modules also use a packaging structure where the thyristor chip is fixed to an insulating substrate, with external circuit connections completed via solder pads and wires.

[0004] During actual operation, the thyristor chip inside the module will generate periodic temperature changes due to heat generated during conduction. The metal substrate, insulating substrate, conductive connectors and chips in the packaging structure will all expand and contract with temperature changes. Therefore, the reliability of the interconnect structure is prone to problems, which will affect the reliability and service life of the module packaging. In addition, the existing structure is relatively heavy, which is not conducive to the lightweight design of the equipment. Summary of the Invention

[0005] This invention aims to address one of the technical problems in related technologies to a certain extent. To this end, this invention provides an anti-parallel thyristor module and a solid-state recloser, which have the advantages of high packaging reliability and lightweight structure.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: An anti-parallel thyristor module includes at least one package, the package comprising: metal substrate; An insulating substrate, wherein the insulating substrate is disposed on the metal substrate; The first thyristor chip and the second thyristor chip are both bare chips and are both disposed on the insulating substrate; A flexible conductive interconnection structure, wherein the first thyristor chip and the second thyristor chip are connected in reverse parallel through the flexible conductive interconnection structure; The lead-out structure is electrically connected to the first thyristor chip and the second thyristor chip and forms an interface for connecting to the outside. The flexible conductive interconnect structure is configured to compensate for the mechanical stress generated by the thermal expansion difference of the package during thermal cycling.

[0007] In this application, by setting an insulating substrate on a metal substrate and integrating the first and second thyristor chips as bare chips on the insulating substrate, the ceramic casing, pressure block, and screw pre-tightening structure in traditional press-fit packaging are reduced, thereby reducing the overall size and weight of the module and making the module structure more compact and lightweight. The first and second thyristor chips are connected in reverse parallel through a flexible conductive interconnect structure. This flexible conductive interconnect structure can compensate for the mechanical stress caused by the difference in thermal expansion during thermal cycling of the package, thereby reducing stress concentration at the connection points, reducing the risk of fatigue failure of the interconnect structure, and improving the reliability and long-term operational stability of the module package. In addition, by setting a lead structure that is electrically connected to the first and second thyristor chips, an interface for connecting external drive circuits and main circuits can be formed, thereby improving the convenience of connection between the module and external systems and facilitating modular installation and maintenance.

[0008] Optionally, the insulating substrate is a direct copper-clad ceramic substrate, the lower surface of which is fixed on the metal substrate, and the upper surface of which is formed with mutually electrically isolated anode pads, cathode pads, first gate pads, and second gate pads; the anode of the first thyristor chip is connected to the anode pad, and the gate of the first thyristor chip is connected to the first gate pad through a bonding wire; the cathode of the second thyristor chip is connected to the cathode pad, and the gate of the second thyristor chip is connected to the second gate pad through a bonding wire.

[0009] Optionally, the flexible conductive interconnect structure includes a first flexible copper sheet and a second flexible copper sheet. The first flexible copper sheet connects the cathode of the first thyristor chip and the anode of the second thyristor chip. One end of the second flexible copper sheet is connected to the anode pad, and the other end is connected to the cathode pad, so as to form an anti-parallel connection between the first thyristor chip and the second thyristor chip.

[0010] Optionally, both the first flexible copper sheet and the second flexible copper sheet include a bending section, which is configured to produce elastic deformation when the package undergoes a temperature change.

[0011] Optionally, the first flexible copper sheet is connected to the cathode of the first thyristor chip and the anode of the second thyristor chip by welding or sintering; the second flexible copper sheet is connected to the anode pad and the cathode pad by welding or sintering.

[0012] Optionally, the lead-out structure includes multiple spring pins, some of which are in pressure contact with the cathode pad, and others are in pressure contact with the first gate pad and the second gate pad.

[0013] Optionally, the package further includes an insulating housing, wherein the first thyristor chip, the second thyristor chip, the flexible conductive interconnect structure, and the lead-out structure are disposed inside the insulating housing.

[0014] Optionally, the spring pin is pre-pressed into the mounting hole of the insulating housing and maintains contact pressure with the corresponding pad using its own elasticity.

[0015] Optionally, the package contains a thermally conductive and insulating potting material that fills the gaps between the first thyristor chip, the second thyristor chip, the flexible conductive interconnect structure, and the bonding wires.

[0016] Furthermore, the present invention also provides a solid-state recloser, which includes the anti-parallel thyristor module described in any of the preceding claims. The reasoning process for the beneficial effects of the solid-state recloser provided by the present invention and the aforementioned anti-parallel thyristor module is similar, and will not be repeated here.

[0017] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and accompanying drawings. The preferred embodiments or means of the present invention will be shown in detail in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. In addition, each of these features, elements and components appearing in the following text and drawings is a plurality of, and different symbols or numbers are used for convenience of representation, but all represent parts with the same or similar construction or function. Attached Figure Description

[0018] The present invention will be further described below with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the structure of a single insulator module in this invention; Figure 2 for Figure 1 An explosion diagram; Figure 3 This is a schematic diagram of the heat sink strip in this invention; Figure 4 This is a schematic diagram of the package structure in this invention; Figure 5for Figure 4 An explosion diagram.

[0019] Among them, 1. Insulating skirt; 11. Inner cavity; 2. Current-carrying conductor; 3. Package body; 31. Insulating substrate; 32. Metal substrate; 33. First thyristor chip; 34. Flexible conductive interconnection structure; 341. First flexible copper sheet; 342. Second flexible copper sheet; 35. Spring pin; 36. Second thyristor chip; 4. Energy harvesting coil; 5. Heat sink strip; 51. Heat sink fins; 6. Insulating support. Detailed Implementation

[0020] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described are intended to explain the present invention and should not be construed as limiting the invention.

[0021] The terms "an embodiment," "example," or "example" used in this specification refer to a particular feature, structure, or characteristic described in connection with the embodiment itself that may be included in at least one embodiment disclosed in this application. The phrase "in an embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment.

[0022] Example: This example provides an anti-parallel thyristor module, such as... Figure 4 and Figure 5 As shown, it is used to form the power switching unit in a solid-state recloser. The anti-parallel thyristor module includes at least one package 3. The package 3 refers to an integral modular structure used to house, fix, and protect the power chip and its interconnect structure, providing mechanical support, electrical insulation, heat dissipation, and environmental protection. Specifically, the package 3 includes a metal substrate 32, an insulating substrate 31, a first thyristor chip 33, a second thyristor chip 36, a flexible conductive interconnect structure 34, and a lead-out structure.

[0023] Thyristor modules are power semiconductor components used to achieve high-current conduction and control. Their main function is to enable the main circuit to conduct after gate triggering and to turn off when the current crosses zero. Anti-parallel connection refers to two thyristors connected in opposite conduction directions, thereby enabling the thyristor module to achieve bidirectional AC conduction.

[0024] A metal substrate 32 is disposed at the bottom of the package 3, serving as the mechanical support base for the entire module and the main heat dissipation channel. Preferably, the metal substrate 32 is a copper substrate. A copper substrate is a high thermal conductivity metal plate made of copper, possessing high thermal conductivity and high mechanical strength, enabling rapid heat conduction away from the thyristor chip during operation. Furthermore, the copper substrate can be made of oxygen-free copper to reduce internal impurities and improve thermal conductivity. Additionally, the thickness of the copper substrate can be selected based on the module's rated current, for example, from 2mm to 8mm. By employing an integral copper substrate structure, a unified mechanical support base is provided for the entire package 3, while simultaneously forming a continuous heat dissipation path, thereby reducing the chip junction temperature and improving the long-term operational stability of the module.

[0025] An insulating substrate 31 is disposed above a metal substrate 32 and serves to provide electrical insulation and circuit wiring. The insulating substrate 31 is preferably a direct copper-clad ceramic substrate. A direct copper-clad ceramic substrate, also known as a DBC substrate, is a power electronic packaging substrate formed by directly sintering copper layers onto the upper and lower surfaces of a ceramic insulating layer. It possesses both high insulation and high thermal conductivity. The lower surface of the direct copper-clad ceramic substrate is fixed to the metal substrate 32, and this fixing method can be welding, brazing, or sintering. Sintering refers to a connection process that utilizes metal particles to form a metallurgical bond under high-temperature conditions, which offers higher connection strength and higher thermal cycling resistance compared to ordinary welding. By fixing the DBC substrate to the copper substrate, a continuous heat dissipation path of "chip—DBC substrate—copper substrate" can be formed, thereby shortening the heat conduction path and reducing the overall thermal resistance.

[0026] The upper surface of the direct copper-clad ceramic substrate has electrically isolated anode pads, cathode pads, a first gate pad, and a second gate pad. Pads are metal connection areas formed on the copper-clad layer, used for chip mounting and current transmission. The anode pad is used for anode connection to the first thyristor chip 33, the cathode pad is used for cathode connection to the second thyristor chip 36, and the first and second gate pads are used to connect to the gate control terminals of the corresponding thyristor chips. By forming multiple mutually insulated pad areas on the DBC substrate, the main circuit and gate drive circuit can be integrated within a limited space, thereby improving module integration and reducing overall size.

[0027] The first thyristor chip 33 and the second thyristor chip 36 are both disposed on the insulating substrate 31. A thyristor chip refers to a bare semiconductor chip after the external packaging has been removed. Specifically, it may include a PNPN four-layer semiconductor structure internally, and conduction is achieved through gate control. Unlike traditional press-fit thyristors, the thyristor chip in this embodiment adopts a bare chip structure, that is, the thyristor chip after the external ceramic shell and metal clamping block have been removed is used directly.

[0028] The anode of the first thyristor chip 33 is connected to the anode pad, and the cathode of the second thyristor chip 36 is connected to the cathode pad. The connection can be achieved through welding or sintering. By directly mounting the bare chips onto the DBC substrate, the intermediate thermal interface in the existing packaging process can be reduced, thereby lowering thermal resistance and improving heat dissipation efficiency. Simultaneously, the bare chip structure can reduce the ceramic housing, press-fit frame, and screw assembly in traditional press-fit structures, significantly reducing module weight and achieving lightweight design; the module weight can even be reduced by more than 60%. Furthermore, this embodiment uses welding or sintering to replace the traditional screw press-fit method, eliminating the need for additional pressure blocks and continuous mechanical pre-tightening structures, thus avoiding the pressure relaxation problem in existing press-fit structures.

[0029] Furthermore, the gate of the first thyristor chip 33 is connected to the first gate pad via a bonding wire, and the gate of the second thyristor chip 36 is connected to the second gate pad via a bonding wire. A bonding wire is a thin metal wire used to connect the chip electrodes to external circuitry; it is typically made of aluminum or gold wire. The gate is the control electrode in a thyristor, enabling the thyristor to conduct when a trigger current is applied. By using bonding wires to achieve the gate connection, a flexible electrical connection structure can be formed within a limited space, thereby reducing the mechanical stress concentration in the gate connection area. Simultaneously, because bonding wires are lightweight and occupy little space, the module size can be further reduced, improving the overall integration density.

[0030] The first thyristor chip 33 and the second thyristor chip 36 are connected in reverse parallel via a flexible conductive interconnect structure 34. The flexible conductive interconnect structure 34 is a metal interconnect structure that simultaneously possesses conductivity and deformation capability. It serves both to form a current loop and to absorb mechanical stress generated during thermal cycling. It should be noted that thermal cycling refers to the process in which the package 3 continuously experiences temperature increases and decreases during the heating and cooling processes of the first thyristor chip 33 and the second thyristor chip 36. Due to the different coefficients of thermal expansion of materials such as the metal substrate 32 (e.g., copper), the insulating substrate 31 (e.g., ceramic), and the solder, these materials are prone to generating mechanical stress at the connection interface during repeated thermal cycling. If this mechanical stress cannot be released, it may lead to fatigue cracking of the solder layer, chip failure, or breakage of the connection structure. In this embodiment, the flexible conductive interconnect structure 34 can generate a certain amount of elastic deformation when the package 3 experiences temperature changes, thereby compensating for the mechanical stress caused by the difference in thermal expansion and improving the long-term reliability of the module.

[0031] The flexible conductive interconnect structure 34 includes a first flexible copper sheet 341 and a second flexible copper sheet 342. The flexible copper sheet is a thin copper conductor with a certain degree of flexibility, capable of undergoing a certain deformation while maintaining low conductive impedance. The first flexible copper sheet 341 connects the cathode of the first thyristor chip 33 to the anode of the second thyristor chip 36. One end of the second flexible copper sheet 342 is connected to the anode pad, and the other end is connected to the cathode pad. This connection method allows the first thyristor chip 33 and the second thyristor chip 36 to form a reverse parallel connection structure. When the alternating current flows in the forward direction, one thyristor conducts; when the alternating current flows in the reverse direction, the other thyristor conducts, thus achieving bidirectional AC conduction. Because flexible copper sheets replace traditional rigid copper busbars, the flexible copper sheets can undergo slight deformation during thermal cycling to alleviate stress concentration between the chip and the substrate, thereby improving connection reliability.

[0032] Both the first flexible copper sheet 341 and the second flexible copper sheet 342 include bending sections. A bending section refers to a curved or folded area formed in the copper sheet path, its main function being to improve structural flexibility. The bending section is configured to produce elastic deformation when the package 3 experiences temperature changes. When the anti-parallel thyristor module is operating, the thyristor chip generates heat due to current conduction. The increased chip temperature causes thermal expansion of the DBC substrate and the copper substrate. When the module stops operating, the temperature of each component decreases and contracts. Due to the different expansion rates of different materials, tensile or compressive stresses are generated at the connection interface. By incorporating bending sections in the flexible copper sheets, the bending area can be preferentially deformed, thereby avoiding direct concentration of mechanical stress at the chip connection location. This reduces the risk of solder layer fatigue and improves the module's thermal shock resistance and long-term operational reliability.

[0033] Furthermore, the first flexible copper sheet 341 is connected between the cathode of the first thyristor chip 33 and the anode of the second thyristor chip 36 by welding or sintering; the second flexible copper sheet 342 is connected between the anode pad and the cathode pad by welding or sintering. Welding refers to a process of forming a metal connection by molten solder, while sintering refers to a connection method that uses metal particles to form a metallurgical bond under high temperature and high pressure conditions. Compared with the mechanical pressing structure in the prior art, welding or sintering can form a more stable electrical contact interface, thereby reducing contact resistance and contact heat generation. At the same time, the sintered layer has high thermal conductivity and high mechanical strength, which can maintain a stable connection state during long-term thermal cycling, thereby improving the overall reliability of the module.

[0034] The lead-out structure is used to connect the internal circuitry of the anti-parallel thyristor module to the external circuitry. The lead-out structure includes multiple spring-loaded pins 35. Each spring-loaded pin 35 is a retractable conductive connector with an internal spring structure, providing continuous contact pressure while maintaining a conductive connection.

[0035] A portion of the spring-loaded pins 35 make pressure contact with the cathode pad, while another portion makes pressure contact with the first and second gate pads. The cathode pad corresponds to the main circuit connection terminal, and the gate pad corresponds to the drive control terminal. By employing the spring-loaded pin 35 structure, a quick plug-in connection between the module and external circuits can be achieved without bolt pressing. Simultaneously, due to the elastic structure inside the spring-loaded pins 35, stable contact pressure is maintained even under vibration or thermal expansion conditions, thereby reducing the risk of poor contact and improving the module's vibration resistance. It should be noted that pressure contact refers to a connection method where two conductive components are not connected through welding, threaded fixing, or permanent connection, but rather through mechanical pressure that continuously presses the two contact surfaces together to form a stable electrical connection. Taking the spring-loaded pin 35 as an example, it has an internal spring structure. After installation, the pin tip continuously presses against the corresponding pad or electrode surface. The pin tip and the pad remain pressed together at all times, thus forming a stable conductive path. This connection method does not rely on solder fixing but on elastic pressure to maintain conductivity, therefore it is a typical pressure contact structure.

[0036] The package 3 also includes an insulating shell. The insulating shell is an external encapsulation structure made of insulating material, whose main functions are electrical isolation, mechanical protection, and environmental protection. The first thyristor chip 33, the second thyristor chip 36, the flexible conductive interconnect structure 34, and the lead-out structure are all housed inside the insulating shell. The insulating shell can be made of epoxy resin, PPS engineering plastic, or other highly insulating and heat-resistant materials. By using the insulating shell, the internal power devices can be isolated from the external environment, thereby preventing dust, moisture, and foreign objects from entering the module. Simultaneously, the insulating shell also provides mechanical support to the internal structure, thereby improving the overall structural strength of the module.

[0037] Furthermore, the spring pin 35 is pre-pressed into the mounting hole of the insulating housing, and one end of the spring pin 35 contacts the pad on the DBC substrate. The spring pin 35 maintains contact pressure with the corresponding pad using its own elasticity. Pre-pressing refers to applying a compression amount to the spring pin 35 beforehand during installation, keeping it under continuous pressure. That is, when the anti-parallel thyristor module is in the assembly state, the top of the spring pin 35 will be compressed, thus generating a certain amount of compression along the axial direction. At the same time, the spring pin 35 uses its internal elastic structure to continuously apply contact pressure to the corresponding pad, thereby maintaining a stable conductive connection.

[0038] Specifically, the mounting hole is a through-hole structure formed in the insulating housing. Through pre-compression, the spring-loaded pin 35 can continuously apply a stable contact force to the pad during operation, maintaining stable conductive contact even if the module experiences slight displacement due to thermal expansion or mechanical vibration. This reduces contact resistance fluctuations and improves the connection stability of the main circuit and gate drive circuit. To reiterate, the spring-loaded pin 35 is slidably mounted within the mounting hole of the insulating housing and maintains elastic contact with the corresponding pad through its internal elastic element. That is, after the pin is inserted into the mounting hole of the insulating housing, it is already slightly compressed, thus continuously applying elastic force to the pad.

[0039] The end of the spring pin 35 away from the insulating substrate 31 has an interface for connecting to the outside. That is, the spring pin 35 enables the module to be connected to the external circuit in a plug-in manner, thereby simplifying the assembly process and improving the convenience of later maintenance and replacement.

[0040] In other embodiments, the main current output terminal of the anti-parallel thyristor module is led out through a large-area solder pad or an external copper busbar to meet the high current conduction requirements; the spring pin 35 is mainly used for leading out the gate drive signal and some auxiliary electrical connections. Because the spring pin 35 has elastic contact characteristics, it can improve the convenience of module insertion, installation, disassembly, and maintenance while ensuring electrical connection stability. In other embodiments, the main current is directly led out from the anode side using a copper busbar, while the cathode side and gate side are connected to the external circuit through the spring pin 35. Since the gate circuit current is relatively small, and the cathode side connection is mainly used for control circuits or auxiliary connections, the spring pin 35 can meet the corresponding conduction requirements while achieving modular plug-in connection.

[0041] The encapsulation body 3 contains a thermally conductive and insulating potting material. This material is a filler with both insulating and thermally conductive properties, and can be silicone, epoxy resin, or polyurethane filled with thermally conductive particles. The thermally conductive and insulating potting material fills the gaps between the first thyristor chip 33, the second thyristor chip 36, the flexible conductive interconnect structure 34, and the bonding wires. By filling the internal gaps with the potting material, the internal components are fixed as a whole, thereby reducing relative displacement under vibration conditions. Simultaneously, the thermally conductive and insulating potting material also forms additional heat dissipation paths, further conducting localized heat to the external structure, thus improving heat dissipation capacity. Furthermore, the potting layer also isolates moisture and dust from the air, improving the module's moisture resistance, corrosion resistance, and environmental resistance.

[0042] The anti-parallel thyristor module in this embodiment can be applied to a solid-state recloser. The solid-state recloser includes the aforementioned anti-parallel thyristor module, as well as a drive control circuit and a main circuit structure connected to it. The drive control circuit provides a trigger signal to the thyristor gate, thereby controlling the thyristor's on / off state. The main circuit structure is connected to the power distribution line to achieve line on / off control. When a momentary fault occurs in the power distribution line, the control system can control the thyristor to quickly turn off, thereby cutting off the fault current; after the fault disappears, the control system applies a trigger signal to the gate again, causing the thyristor to turn on again, thus achieving the automatic reclosing function.

[0043] Because this embodiment uses a bare-chip direct packaging structure, the ceramic shell, press-fit frame, and large bolt structure found in traditional press-fit thyristors can be eliminated, thereby reducing overall weight and module size. Since the flexible copper sheet possesses both conductivity and flexibility compensation functions, it can absorb thermal expansion stress while maintaining high current conduction capability, improving long-term thermal cycling reliability. The use of a continuous heat dissipation path between the DBC substrate and the copper substrate reduces thermal resistance and improves heat dissipation efficiency. The use of spring-loaded pins 35 as lead-out structures enables quick plug-in installation and improves vibration resistance. The use of an insulating shell and thermally conductive insulating potting material to form an integral package improves the module's environmental adaptability and mechanical stability. Through the above structural combinations, the anti-parallel thyristor module in this embodiment meets the requirements of solid-state reclosers for lightweight, high reliability, miniaturization, and high environmental adaptability.

[0044] In addition, the metal substrate 32 in this embodiment can be designed as a single-layer structure or a composite layer structure according to different application scenarios. When a composite layer structure is used, a nickel plating layer or an anti-oxidation layer can be further deposited on the back of the copper substrate to improve the corrosion resistance of the copper substrate. The nickel plating layer refers to a metallic nickel protective layer covering the copper surface, the main function of which is to prevent the copper material from oxidizing after long-term exposure to air, thereby improving the long-term stability of the substrate. In other embodiments, the metal substrate 32 can also be further connected to an external heat sink, such as an air-cooled heat sink, a water-cooled plate, or a vapor chamber structure. A vapor chamber is a heat dissipation element with an internal phase change heat transfer structure, which can quickly diffuse local heat to a larger area. By adding an auxiliary heat dissipation structure to the outside of the metal substrate 32, the operating temperature of the power device can be further reduced, and the heat dissipation capacity under high current conditions can be improved.

[0045] Specifically, the ceramic layer in a direct copper-clad ceramic substrate can be made of alumina ceramic, aluminum nitride ceramic, or silicon nitride ceramic. Alumina ceramic has the advantages of low cost and stable insulation performance, making it suitable for conventional power applications; aluminum nitride ceramic has a high thermal conductivity, which can further improve heat dissipation efficiency; and silicon nitride ceramic has high mechanical strength and thermal shock resistance, making it suitable for frequent thermal cycling conditions. By selecting different ceramic materials according to different application scenarios, a balance can be achieved between thermal conductivity, mechanical strength, and manufacturing cost, thereby improving the flexibility of module design.

[0046] In addition, the anode pads, cathode pads, first gate pads, and second gate pads can be formed on the surface of the DBC substrate using an etching process. Etching refers to a method of patterning the copper layer through chemical etching or laser processing. By employing a patterned copper layer structure, different potential regions can be formed within a limited space, ensuring sufficient creepage and insulation distances between the pads. Creepage distance refers to the shortest distance along the surface of the insulating material for conductors at different potentials, directly affecting the module's insulation reliability. By rationally designing the pad spacing, the risk of surface discharge under high voltage conditions can be prevented.

[0047] Furthermore, in other embodiments, the first thyristor chip 33 and the second thyristor chip 36 can be chips of the same specifications to facilitate standardized module design and mass production; alternatively, chips with different rated parameters can be used to adapt to special application scenarios. For example, under partially asymmetrical load conditions, thyristor chips with different current ratings can be selected according to the actual current direction distribution, thereby improving the module's adaptability.

[0048] Furthermore, a solder layer or a sintered silver layer can be applied to the bottom of the bare chip to improve the connection strength and thermal conductivity between the chip and the DBC substrate. The sintered silver layer has high thermal conductivity and high fatigue resistance, thus maintaining a stable connection under high-temperature cycling conditions.

[0049] Furthermore, multiple bonding wires can be arranged in parallel. By using multiple bonding wires, the current density in a single bonding wire can be reduced, thereby reducing wire heating and improving gate drive stability.

[0050] In other embodiments, the bonding wires can also be fixed between the chip electrodes and gate pads using ultrasonic welding. Ultrasonic welding is a bonding process that uses high-frequency vibration to achieve localized metal bonding, characterized by fast connection speed and a small heat-affected zone. By employing ultrasonic bonding, the impact of high-temperature welding on the chip structure can be reduced, improving connection reliability.

[0051] The first flexible copper sheet 341 and the second flexible copper sheet 342 can adopt a stacked copper strip structure or a corrugated copper strip structure. A stacked copper strip structure refers to a flexible conductor formed by stacking multiple layers of thin copper sheets, which can improve bending performance while maintaining conductivity; a corrugated copper strip structure improves flexibility by forming a wavy structure on the surface of the copper sheet. By adopting the above structures, the flexible copper sheet can generate greater deformation during thermal cycling, thereby further alleviating mechanical stress at the connection interface. In addition, the surface of the flexible copper sheet can be tin-plated or silver-plated to improve solderability and oxidation resistance.

[0052] The first flexible copper sheet 341 and the second flexible copper sheet 342 can be arranged symmetrically. Symmetrical arrangement means that the two flexible copper sheets are located on opposite sides of the module's central axis, maintaining approximately the same path length. By adopting a symmetrical current path design, the difference in current distribution in different branches can be reduced, thereby reducing localized heating and improving overall current uniformity. Simultaneously, the symmetrical structure can also reduce the additional mechanical stress generated inside the module due to uneven heat distribution. Furthermore, the first flexible copper sheet 341 and the second flexible copper sheet 342 are arranged along a path close to the surface of the insulating substrate 31, shortening the current transmission distance between them to reduce the main current loop area, thereby reducing parasitic inductance and voltage spikes during turn-off.

[0053] The spring-loaded pin 35 can be gold-plated. The gold plating reduces contact resistance and improves oxidation resistance, ensuring stable conductivity even under long-term insertion and removal conditions. In other embodiments, the spring-loaded pin 35 can also incorporate a helical spring or a leaf spring structure. Helical springs provide a larger compression stroke, while leaf springs reduce the overall height. By selecting different pin structures based on varying spatial layouts, the flexibility of module design can be improved.

[0054] The insulating housing can be either a split structure or a one-piece injection-molded structure. A split structure facilitates later disassembly and maintenance, while a one-piece injection-molded structure improves overall sealing performance and adapts to the humid, dusty, and vibrating conditions of outdoor pole-mounted equipment. In other embodiments, reinforcing ribs can also be provided on the surface of the insulating housing. These reinforcing ribs are raised support structures formed on the housing surface, which improve the housing's bending and impact resistance. By incorporating reinforcing ribs, the mechanical stability of the module during transportation and outdoor operation can be improved.

[0055] In this embodiment, the anti-parallel thyristor module operates as follows: when the AC line is in normal conduction, the drive control circuit applies a trigger signal to the gate of the corresponding thyristor, causing the thyristor to conduct and form the main circuit current path. When a line fault occurs, the control system stops gate triggering, causing the thyristor to turn off when the current crosses zero, thus cutting off the fault current. After the fault disappears, the drive control circuit provides a trigger signal to the gate again, restoring the line conduction. Because the module in this embodiment uses a semiconductor switch structure, it can achieve faster operating speed and longer operating life compared to traditional mechanical switches. Traditional mechanical switches are prone to contact erosion during frequent opening and closing, while thyristors have a non-mechanical contact structure, thus significantly reducing mechanical wear.

[0056] Furthermore, the anti-parallel thyristor module in this embodiment can also be applied to static var compensators, AC voltage regulators, and industrial motor soft starters. In static var compensators, the thyristor module can control the switching on and off of capacitor banks; in AC voltage regulators, the thyristor module can adjust the output voltage by controlling the conduction angle; and in motor soft starters, the thyristor module can achieve smooth motor starting by gradually increasing the conduction angle. Therefore, the anti-parallel thyristor module in this embodiment is not only suitable for solid-state recloser scenarios but can also be widely applied to other high-power power electronic devices.

[0057] In summary, the anti-parallel thyristor module in this embodiment combines a bare chip, a DBC substrate, a flexible copper interconnect structure, a spring-loaded pin 35 lead-out structure, and an overall potting structure to achieve lightweight, miniaturization, and high reliability while meeting high current conduction requirements. Specifically, the bare chip structure shortens the heat dissipation path and reduces overall weight; the flexible conductive interconnect structure 34 absorbs thermal expansion stress and improves thermal cycle life; the DBC substrate and copper substrate form an efficient heat dissipation path; the spring-loaded pin 35 enables quick insertion and stable contact; and the thermally conductive and insulating potting structure improves mechanical stability and environmental adaptability. Therefore, this embodiment effectively meets the application requirements of power distribution automation equipment for highly reliable, highly integrated, and long-life power modules.

[0058] This embodiment also provides a solid-state recloser, which uses power electronic devices to replace traditional mechanical switches. It can automatically and quickly reclose the circuit after a momentary fault in the power distribution line, thereby improving power supply reliability. The anti-parallel thyristor module in this embodiment can be used as the core power execution unit in the solid-state recloser.

[0059] In some embodiments, the anti-parallel thyristor module may include multiple packages 3, which are electrically connected via an external series bus or external conductive connectors. The series bus is a metal conductor used to connect the conductive terminals of different packages 3, enabling current transmission and voltage distribution among the multiple packages 3. By setting multiple packages 3, the overall voltage rating or current carrying capacity of the module can be expanded according to actual application requirements, thereby improving the module's applicability.

[0060] Multiple packages 3 can be arranged along their length and connected via copper busbars or laminated busbars. Laminated busbars are low-parasitic-parameter conductive structures formed by stacking multiple layers of conductors and insulating layers, which reduces parasitic inductance in the connection circuit. By using an external series busbar to connect multiple packages 3, the system integration flexibility can be improved while maintaining a modular structure, facilitating combination and expansion according to different voltage levels.

[0061] Additionally, solid-state reclosers in other embodiments, such as Figures 1 to 5 As shown, it may also include multiple insulator modules electrically connected in series, each insulator module including: Insulating umbrella skirt 1, which has an inner cavity 11 extending along the axial direction; The current-carrying conductor 2 extends axially through the inner cavity 11 and is used to transmit alternating current. The aforementioned anti-parallel thyristor module is electrically connected to the current-carrying conductor 2 to control the on / off state of the current in the current-carrying conductor 2; The drive circuit board is electrically connected to the gate of the anti-parallel thyristor module; The solid-state recloser also includes a control unit, which can send synchronous trigger signals to all drive circuit boards; The control unit is configured as follows: When the current-carrying conductor 2 is running normally, a synchronous trigger signal is sent to all drive circuit boards according to the phase of the alternating current, so that each drive circuit board drives its corresponding anti-parallel thyristor module to conduct synchronously. When an abnormal current is detected in current-carrying conductor 2, the synchronous trigger signal is stopped, so that all anti-parallel thyristor modules are synchronously turned off when the AC current crosses zero.

[0062] Multiple insulator modules are arranged sequentially to form a modular solid-state breaking structure suitable for medium and high voltage power distribution lines. These modules are electrically connected in series via conductive connections to share the line operating voltage. Compared to using a single high-voltage power device, this series connection of multiple modules expands the line's withstand voltage rating, thereby reducing the withstand voltage requirement of individual power devices and improving modular design capabilities. It should be noted that the anti-parallel thyristor module is a semiconductor power device with gate control functionality; it can turn on upon receiving a gate trigger signal and naturally turn off when the AC current crosses zero. The drive circuit board refers to the control board used to generate thyristor trigger pulses and implement control logic; the insulating skirt 1 refers to the insulating structure used to provide external insulation and protection against flashover.

[0063] Each insulator module includes an insulating shed 1, a current-carrying conductor 2, an anti-parallel thyristor module, and a drive circuit board. The insulating shed 1 can be made of silicone rubber, epoxy resin, or composite insulating material, with multiple axially distributed umbrella-shaped edges on its outer side to increase creepage distance and improve external insulation capability. An axially penetrating cavity 11 is formed inside the insulating shed 1 to accommodate power devices and control components. By placing the anti-parallel thyristor module and drive circuit board inside the insulating shed 1, the power switch structure and insulation structure can be integrated, thereby reducing exposed external wires, improving equipment insulation reliability, and reducing the impact of the external environment on internal components. Current anomalies include short-circuit anomalies, overload anomalies, and abnormal fluctuations exceeding preset thresholds in the current-carrying conductor 2.

[0064] The current-carrying conductor 2 axially penetrates the inner cavity 11 of the insulating skirt 1 and is used to transmit alternating current. Specifically, the current-carrying conductor 2 can be made of copper conductor, silver-plated copper conductor, or aluminum alloy conductor, with terminals formed at both ends for connection to the power distribution line. It is understood that the insulating skirt 1 has through holes for the current-carrying conductor 2 to pass through, and these through holes are either interference-fitted with the current-carrying conductor 2 or fitted with sealing gaskets to improve the sealing between the insulating skirt 1 and the current-carrying conductor 2. The current-carrying conductor 2 is electrically connected to the anti-parallel thyristor module, allowing the alternating current to form a conduction loop through the anti-parallel thyristor module. The current-carrying conductor 2 serves both as the main current path and as the magnetic field source for the energy harvesting coil 4. When the alternating current flows through the current-carrying conductor 2, an alternating magnetic field is formed around it, thus providing a working basis for the subsequent energy harvesting structure. By adopting a through-type current-carrying conductor 2 structure, the entire insulator module can form a compact axial structure, thereby improving space utilization. In other embodiments, the current-carrying conductor 2 can also be a power distribution line.

[0065] The anti-parallel thyristor module is electrically connected to the current-carrying conductor 2 to control the on / off state of the current in the current-carrying conductor 2. Specifically, the anti-parallel thyristor module is a solid-state switching unit that can turn on after receiving a gate trigger pulse and turn off naturally when the AC current crosses zero. Compared with the traditional mechanical circuit breaking structure, the anti-parallel thyristor module can achieve line breaking without the movement of mechanical contacts, thus reducing mechanical wear and improving the breaking response speed. The anti-parallel thyristor modules in multiple insulator modules can operate synchronously, thereby ensuring that multiple series power units have consistent on and off states during operation, thus improving the reliability of series operation.

[0066] The specific principles of the turn-on and turn-off of the anti-parallel thyristor module are as follows: Since the thyristor is a semi-controlled power electronic device, when the anode and cathode of the thyristor are in a forward bias state, the drive circuit board outputs a trigger pulse signal to the gate of the thyristor, and the thyristor can change from the cutoff state to the conduction state, thereby allowing the AC current to pass through the current-carrying conductor 2. The control unit sends a synchronous trigger signal to each drive circuit board according to the phase of the AC current, so that multiple anti-parallel thyristor modules are turned on synchronously. When an abnormal current is detected, the control unit stops sending the synchronous trigger signal. Since the thyristor does not immediately turn off after losing the gate trigger, but automatically exits the conduction state when the AC current drops to the zero-crossing point and the current is less than the holding current, multiple anti-parallel thyristor modules can be turned off synchronously when the AC current crosses zero.

[0067] The drive circuit board is electrically connected to the gate of the anti-parallel thyristor module. Specifically, the drive circuit board may include functional modules such as a pulse trigger circuit, a logic control circuit, an isolation drive circuit, and a protection circuit to output trigger pulse signals to the anti-parallel thyristor module. Furthermore, the drive circuit board may employ a multi-layer PCB structure and be fixed within the inner cavity 11 of the insulating skirt 1 by an insulating bracket 6. After receiving the synchronization trigger signal from the control unit, the drive circuit board generates a corresponding gate trigger pulse and applies it to the gate of the anti-parallel thyristor module to drive it to conduct. In summary, by using an independent drive circuit board, the driving consistency between each insulator module can be improved, and the mutual interference between gate drive circuits can be reduced.

[0068] The solid-state recloser also includes a control unit, which sends synchronous trigger signals to all drive circuit boards. The control unit can be a DSP controller, microcontroller, FPGA, or industrial controller, used for line status detection and synchronous control. Furthermore, the control unit can connect to each drive circuit board via fiber optic communication, electrically isolated communication, or bus communication. Under normal operating conditions, the control unit sends synchronous trigger signals to all drive circuit boards according to the AC current phase, causing all anti-parallel thyristor modules to conduct synchronously, thus forming a complete main current path. When a short circuit or overload fault is detected in the current-carrying conductor 2, the control unit stops sending synchronous trigger signals. Because thyristors have the AC zero-crossing natural turn-off characteristic, all anti-parallel thyristor modules can turn off synchronously when the AC current crosses zero, achieving rapid line disconnection. By adopting a synchronous trigger control method, the problem of inconsistent conduction among multiple series modules can be avoided, thereby improving the stability of series operation.

[0069] Each insulator module also includes a pulse transformer. The pulse transformer is a magnetic coupling device used to transmit trigger pulses and achieve electrical isolation. The drive circuit board is coupled to the gate of the anti-parallel thyristor module via the pulse transformer. The primary sides of multiple pulse transformers are connected in parallel to receive the same synchronous trigger signal, and the secondary sides of multiple pulse transformers are respectively connected to the gate of the corresponding anti-parallel thyristor module. When the control unit outputs a synchronous trigger signal to the drive circuit board, the drive circuit board can output an isolated trigger pulse to the gate of the anti-parallel thyristor module through the pulse transformer. Because the pulse transformer can achieve electrical isolation between the primary and secondary sides, it can prevent the high-voltage side potential from directly coupling to the low-voltage control side, thereby improving the insulation safety of the control system.

[0070] Each insulator module also includes an energy harvesting coil 4. The energy harvesting coil 4 is fitted around the current-carrying conductor 2 and can generate an induced current based on the alternating magnetic field formed around the current-carrying conductor 2. The energy harvesting coil 4 can adopt a toroidal iron core winding structure, and its output terminal is electrically connected to the drive circuit board. During line operation, the alternating current flowing through the current-carrying conductor 2 can generate an alternating magnetic field around it. Under the action of the alternating magnetic field, the energy harvesting coil 4 generates induced electrical energy and provides operating power to the drive circuit board. By adopting electromagnetic induction energy harvesting, the need for additional independent low-voltage power supply cables can be avoided, thereby reducing wiring complexity and improving the integration of the equipment.

[0071] In other embodiments, the anti-parallel thyristor module includes a DBC substrate, a copper substrate, and two thyristor chips. The thyristor chips are bare-chip structures soldered onto the DBC substrate. The DBC substrate may include a ceramic insulating layer and copper cladding on its upper and lower surfaces. The ceramic insulating layer may be made of aluminum nitride ceramic or alumina ceramic to balance insulation and thermal conductivity. The DBC substrate is disposed on the copper substrate, which is thermally coupled to the inner wall of the insulating skirt 1. The copper substrate may be further connected to the heat sink strip 5 to form a heat conduction path. The two thyristor chips are connected in anti-parallel via flexible copper sheets to achieve bidirectional AC conduction. "Anti-parallel" means that the two thyristor chips are connected in parallel with opposite conduction directions. The anode of one thyristor chip is connected to the cathode of the other thyristor chip, and the anode of the other thyristor chip is connected to the cathode of the aforementioned thyristor chip. This allows the two thyristor chips to conduct during the positive and negative half-cycles of the AC current, respectively, achieving bidirectional on / off control of the AC current. Flexible copper sheets can absorb the mechanical stress generated by thermal expansion and contraction, thereby reducing the risk of solder joint fatigue. By employing a packaging structure with a bare die and a DBC substrate, package thermal resistance can be reduced and heat dissipation efficiency improved. It should be noted that the DBC substrate, or Direct Copper Ceramic Substrate, is used to provide insulation support and thermal conductivity for power devices; the copper substrate refers to a metal heat dissipation substrate with high thermal conductivity, used to conduct heat generated during the operation of power devices outwards.

[0072] Each thyristor chip has a gate electrode, and each gate electrode is led out to the driver circuit board via a spring-loaded pin 35. The spring-loaded pin 35 is a conductive connector with elastic pressing function, which can absorb assembly tolerances while ensuring electrical connection stability. The driver circuit board outputs trigger pulses to the thyristor gates via the spring-loaded pins 35. Because the spring-loaded pins 35 have elastic compensation capabilities, they can reduce the impact of vibration or thermal deformation on the gate connection reliability, thereby improving gate drive stability.

[0073] Each insulator module also includes a heat sink strip 5, heat sink fins 51, and a miniature fan. The heat sink strip 5 is detachably attached to one side of the insulating skirt 1 and is used to close or open the inner cavity 11 of the insulating skirt 1. The heat sink strip 5 can be made of aluminum alloy or copper alloy and forms a thermally conductive connection with the copper substrate. Multiple heat sink fins 51 are formed on the heat sink strip 5 and are located on the side of the heat sink strip 5 away from the insulating skirt 1. The multiple heat sink fins 51 extend in different directions to form a multi-directional heat dissipation channel on the heat sink strip 5. The heat generated during the operation of the anti-parallel thyristor module is conducted step by step to the heat sink fins 51 through the DBC substrate, copper substrate, insulating skirt 1, and heat sink strip 5, and is dissipated through heat exchange between the heat sink fins 51 and the air. The miniature fan is disposed on the heat sink strip 5, and its air outlet direction is directed towards the heat sink fins 51. The miniature fan is electrically connected to the power harvesting coil 4 to drive its operation using the electrical energy generated by the power harvesting coil 4. When the anti-parallel thyristor module generates heat during operation, the heat is conducted to the heat dissipation fins 51 via the DBC substrate, copper substrate, and heat sink strip 5. The airflow generated by the micro fan accelerates the airflow around the heat dissipation fins 51, thereby improving heat dissipation efficiency. By forming multi-directional heat dissipation channels, airflow capacity can be improved and local heat accumulation can be reduced.

[0074] The insulator module also includes a temperature sensor. The temperature sensor can be a thermistor, thermocouple, or digital temperature sensor, and can be mounted on the thyristor chip or copper substrate. The temperature sensor can be electrically connected to the drive circuit board. The drive circuit board can acquire the temperature data detected by the temperature sensor in real time. When the detected temperature exceeds a preset temperature threshold, the drive circuit board controls a miniature fan to start, providing forced air cooling for the anti-parallel thyristor module. By using a temperature sensor, real-time monitoring of the operating temperature of the power devices can be achieved, thereby preventing the thyristor chip from being at a high temperature for extended periods and improving operational stability.

[0075] The anti-parallel thyristor module, the energy harvesting coil 4, and the drive circuit board are all housed within the inner cavity 11 of the insulating skirt 1, which is filled with a sealing material. The sealing material can be epoxy resin, silicone gel, or insulating potting compound, which can integrally seal the anti-parallel thyristor module, energy harvesting coil 4, and drive circuit board within the inner cavity 11. The sealed internal structure forms an integrated insulating package, thereby reducing air gaps and lowering the risk of partial discharge. Simultaneously, the sealing material also improves the vibration resistance and moisture resistance of the internal components, thus enhancing the long-term operational reliability of the equipment. In other embodiments, the inner cavity 11 may not be entirely filled; instead, sealing structures may be provided only at wire lead-out locations, device connection locations, or module joint locations to achieve moisture-proof, dust-proof, and insulation protection.

[0076] The control unit can also calculate the load power in real time and stop sending synchronous trigger signals to the drive circuit board when the load power exceeds a preset capacity threshold, so that the anti-parallel thyristor module can be turned off and trip protection can be performed. The control unit can calculate the load power by collecting line voltage and line current parameters. When the load power exceeds the system's allowable capacity, the control unit stops outputting synchronous trigger signals. Since the anti-parallel thyristor module no longer receives gate trigger pulses, it can be turned off when the AC current crosses zero, thereby disconnecting the faulty line. By setting the power protection function, the protection capability of the solid-state recloser for line overload conditions can be improved. It should be noted that the load here refers to the line-side load, not the thyristor, control unit, or energy extraction coil 4, etc. That is, the load refers to the electrical equipment or power supply circuit that is electrically connected to the current-carrying conductor 2 and consumes electrical energy, specifically including motors, transformers, power equipment, or other electrical devices in the power distribution line.

[0077] The drive circuit board also integrates a status monitoring unit and a communication interface. The status monitoring unit monitors the operating status of the anti-parallel thyristor module, detecting information such as thyristor conduction status, operating temperature, gate drive status, and fault status. The communication interface enables data communication between the drive circuit board and the control unit, and can use a CAN bus interface, RS485 interface, or fiber optic communication interface. The drive circuit board can upload operating status data to the control unit via the communication interface, allowing the control unit to coordinate and control the operation based on the operating status of each module. By setting up the status monitoring unit and communication interface, the intelligent monitoring capability and remote operation and maintenance capability of the solid-state recloser can be improved.

[0078] Furthermore, multiple insulator modules can be installed sequentially using flange connections, conductive connection connections, or bolt connections. Adjacent insulator modules can form a series current path through conductive connecting rods. Each insulator module can withstand a portion of the line voltage, thus enabling multiple modules to collectively form a withstand voltage structure suitable for medium and high voltage power distribution scenarios. With this modular structure, when one module fails, the corresponding insulator module can be disassembled and replaced individually without replacing the entire device, thereby reducing equipment maintenance costs and improving on-site maintenance efficiency.

[0079] Under normal power supply conditions, the control unit continuously collects line current parameters and generates a synchronous trigger timing signal based on the AC current phase. Upon receiving the synchronous trigger signal, all drive circuit boards simultaneously output gate trigger pulses to the corresponding anti-parallel thyristor modules, causing multiple anti-parallel thyristor modules to synchronously enter the conduction state. Because the anti-parallel thyristor modules in multiple insulator modules can conduct synchronously, the problem of uneven voltage distribution caused by some modules turning on prematurely or delayedly can be avoided, thereby improving the operational consistency among multiple series modules.

[0080] As one implementation, the circuit principle of the control unit in the solid-state recloser is as follows. The control unit includes a zero-crossing detection circuit, a pulse shaping circuit, a controller, a signal conditioning circuit, a synchronous trigger output circuit, and a voltage regulator circuit. The anti-parallel thyristor module includes the aforementioned anti-parallel thyristor module, and the anti-parallel thyristor module is electrically connected to the current-carrying conductor 2 to control the on / off state of the current in the current-carrying conductor 2. AC voltage input terminal one and AC voltage input terminal two are used to provide AC voltage sampling signals to the zero-crossing detection circuit. After the AC voltage sampling signal is processed by the zero-crossing detection circuit and the pulse shaping circuit, it forms a zero-crossing pulse signal and is input to the controller. The measuring CT is a current transformer, which is sleeved on the outer periphery of the current-carrying conductor 2 or coupled to the main circuit where the current-carrying conductor 2 is located, and is used to collect the line current in the current-carrying conductor 2. After the output signal of the measuring CT is processed by the signal conditioning circuit, it forms a current sampling voltage signal with a bias midpoint of 2V and is input to the controller. The signal conditioning circuit may include a sampling resistor, a filtering circuit, a limiting protection circuit, and a bias circuit to convert the current signal output by the measuring CT into a voltage signal suitable for the controller to acquire. The controller obtains the line current value based on the current sampling voltage signal and compares the line current value with preset short-circuit current thresholds and preset overload current thresholds. When the line current value is greater than the preset short-circuit current threshold, the controller determines that there is a short-circuit fault in the current-carrying conductor 2; when the line current value is greater than the preset overload current threshold and continues to exceed a preset time, the controller determines that there is an overload fault in the current-carrying conductor 2. During normal operation of the current-carrying conductor 2, the controller generates a synchronization trigger signal based on the zero-crossing pulse signal and the phase of the line current, and outputs it to each drive circuit board through the synchronization trigger output circuit, so that each drive circuit board drives the corresponding anti-parallel thyristor module to conduct synchronously. When the controller determines that there is a short-circuit fault or overload fault in the current-carrying conductor 2, the controller stops outputting the synchronization trigger signal through the synchronization trigger output circuit, so that each anti-parallel thyristor module is synchronously turned off when the AC current crosses zero. The stable DC power required by the controller and synchronous trigger output circuit is provided by a voltage regulator circuit. The voltage regulator circuit can obtain its operating power from the DC power input, or from the output power of the energy harvesting coil 4 after rectification, filtering, and voltage regulation. The working principle of the drive circuit board is as follows: The drive circuit board includes a synchronous trigger signal input terminal, an isolation circuit, a drive amplifier circuit, a pulse transformer, a gate output terminal, a power input terminal, and a power processing circuit. The synchronous trigger signal input terminal receives the synchronous trigger signal from the control unit. The synchronous trigger signal instructs the drive circuit board to output a gate trigger pulse to the anti-parallel thyristor module at the corresponding time. The synchronous trigger signal input terminal is connected to the isolation circuit, which provides electrical isolation to the input synchronous trigger signal to reduce the impact of high-voltage side interference and transient surges on the preceding control signal.The output of the isolation circuit is connected to the drive amplifier circuit, which amplifies the isolated synchronous trigger signal to provide the pulse drive capability required for triggering the pulse transformer and the anti-parallel thyristor module. The output of the drive amplifier circuit is connected to the pulse transformer, which converts the drive signal into a trigger pulse suitable for the thyristor gate and further achieves electrical isolation between the control side and the power side. The gate output is connected to the gate of the anti-parallel thyristor module, transmitting the gate trigger pulse output from the pulse transformer to the gate of the anti-parallel thyristor module, thereby driving the module to conduct. The drive circuit board also includes a power input terminal and a power processing circuit. The power input terminal receives power from the energy harvesting coil 4 after rectification and filtering, or receives other DC power supplies. The power processing circuit regulates, filters, and distributes the input power to form an operating voltage suitable for the isolation circuit, drive amplifier circuit, and pulse transformer. During overall operation, the drive circuit board receives power from the power input terminal, and the power processing circuit supplies power to each functional module. The synchronous trigger signal input terminal receives the synchronous trigger signal output by the control unit. This synchronous trigger signal passes through the isolation circuit, drive amplifier circuit, and pulse transformer in sequence, and is then output from the gate output terminal to the gate of the anti-parallel thyristor module, enabling the anti-parallel thyristor module to conduct according to the control unit's command. It should be noted that multiple drive circuit boards or multiple signal branches can adopt the same or equivalent circuit structure, and the isolation circuit, drive amplifier circuit, and pulse transformer in each signal branch have matched signal transmission characteristics. Therefore, the synchronous trigger signal generated by the same control unit can be transmitted to the gate of each anti-parallel thyristor module through multiple parallel branches, thereby reducing the trigger time difference between different anti-parallel thyristor modules caused by different signal transmission paths, and enabling multiple anti-parallel thyristor modules to conduct within the same target phase range of the AC current. Through the above structure, the solid-state recloser forms a complete control link, which includes measuring the line current by the CT, processing the sampled signal by the signal conditioning circuit, performing fault judgment and synchronous trigger control by the controller, and outputting the gate trigger pulse by the drive circuit board. This enables the detection of abnormal current in the current-carrying conductor 2, synchronous conduction control, and synchronous shutdown control under fault conditions.

[0081] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes, but is not limited to, the contents described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of the present invention will be included within the scope of the claims.

Claims

1. An anti-parallel thyristor module, characterized in that, Includes at least one package (3), said package (3) comprising: metal substrate (32); An insulating substrate (31) is disposed on the metal substrate (32); The first thyristor chip (33) and the second thyristor chip (36) are both bare chips and are both disposed on the insulating substrate (31); A flexible conductive interconnect structure (34) is provided, in which the first thyristor chip (33) and the second thyristor chip (36) are connected in reverse parallel through the flexible conductive interconnect structure (34); The lead-out structure is electrically connected to the first thyristor chip (33) and the second thyristor chip (36) and forms an interface for connecting to the outside. The flexible conductive interconnect structure (34) is configured to compensate for the mechanical stress generated by the thermal expansion difference in the package (3) during thermal cycling.

2. The anti-parallel thyristor module according to claim 1, characterized in that, The insulating substrate (31) is a direct copper-clad ceramic substrate, the lower surface of which is fixed on the metal substrate (32), and the upper surface of which is formed with mutually electrically isolated anode pads, cathode pads, first gate pads and second gate pads; the anode of the first thyristor chip (33) is connected to the anode pad, and the gate of the first thyristor chip (33) is connected to the first gate pad through a bonding wire; the cathode of the second thyristor chip (36) is connected to the cathode pad, and the gate of the second thyristor chip (36) is connected to the second gate pad through a bonding wire.

3. The anti-parallel thyristor module according to claim 2, characterized in that, The flexible conductive interconnect structure (34) includes a first flexible copper sheet (341) and a second flexible copper sheet (342). The first flexible copper sheet (341) connects the cathode of the first thyristor chip (33) and the anode of the second thyristor chip (36). One end of the second flexible copper sheet (342) is connected to the anode pad and the other end is connected to the cathode pad to form an anti-parallel connection between the first thyristor chip (33) and the second thyristor chip (36).

4. The anti-parallel thyristor module according to claim 3, characterized in that, Both the first flexible copper sheet (341) and the second flexible copper sheet (342) include a bending section, which is configured to produce elastic deformation when the package (3) undergoes a temperature change.

5. The anti-parallel thyristor module according to claim 3, characterized in that, The first flexible copper sheet (341) is connected to the cathode of the first thyristor chip (33) and the anode of the second thyristor chip (36) by welding or sintering; the second flexible copper sheet (342) is connected to the anode pad and the cathode pad by welding or sintering.

6. The anti-parallel thyristor module according to claim 2, characterized in that, The lead-out structure includes multiple spring pins (35), a portion of which are in pressure contact with the cathode pad, and another portion of which are in pressure contact with the first gate pad and the second gate pad.

7. The anti-parallel thyristor module according to claim 6, characterized in that, The package (3) further includes an insulating shell, and the first thyristor chip (33), the second thyristor chip (36), the flexible conductive interconnect structure (34) and the lead-out structure are disposed inside the insulating shell.

8. The anti-parallel thyristor module according to claim 7, characterized in that, The spring pin (35) is pre-pressed into the mounting hole of the insulating housing and maintains contact pressure with the corresponding pad using its own elasticity.

9. The anti-parallel thyristor module according to claim 7, characterized in that, The package (3) is provided with a thermally conductive and insulating potting material inside, which fills the gap between the first thyristor chip (33), the second thyristor chip (36), the flexible conductive interconnect structure (34) and the bonding wire.

10. A solid-state recloser, characterized in that, The solid-state recloser includes the anti-parallel thyristor module as described in any one of claims 1 to 9.

Images