Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus includes: a nozzle for ejecting a processing liquid; a first liquid supply system including a first pipe connected to the nozzle for supplying a first liquid to the nozzle via the first pipe; a second liquid supply system including a plurality of second auxiliary pipes respectively connected to a plurality of different portions of a liquid flow path formed by the nozzle and the first pipe for supplying a second liquid to the liquid flow path via any of these auxiliary pipes; and a control unit that controls the first liquid supply system and the second liquid supply system based on a plurality of operating conditions during the removal process of a film formed on the substrate. The plurality of operating conditions correspond to each of the plurality of portions of the substrate.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for removing unwanted films formed on one side of a substrate. Background Technology

[0002] A substrate processing apparatus is used to perform various processing on substrates such as FPD (Flat Panel Display) substrates, optical disc substrates, magnetic disk substrates, magneto-optical disc substrates, photomask substrates, ceramic substrates, or solar cell substrates for semiconductor substrates, liquid crystal display devices, or organic EL (Electro Luminescence) display devices.

[0003] In the substrate processing apparatus described in Patent Document 1, SPM (Sulfuric acid hydrogen peroxide mixture) is used to remove a useless resist film formed on one side of a substrate (wafer). More specifically, the substrate with the resist film is held horizontally by a rotating chuck and rotated about a vertical axis. In this state, an SPM nozzle is positioned above the rotating substrate, and SPM is supplied from the SPM nozzle to the center of rotation of the substrate. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2), which has strong oxidizing power. As a result, the resist film on the substrate is peeled off and removed from one side of the substrate by the oxidizing power of the SPM.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2008-4819 Summary of the Invention

[0005] [The problem the invention aims to solve]

[0006] However, when SPM is supplied to a substrate with a resist film, multiple portions of the resist film may not be removed uniformly. For example, due to variations in the thickness of the resist film and variations in the adhesion between the substrate and the resist film, the resist film formed on the substrate may contain portions that are easy to remove from one side of the substrate and portions that are difficult to remove from the other side. Therefore, in order to reliably remove the portions of the resist film that are difficult to remove from the other side of the substrate, it is considered to extend the SPM supply time to the substrate.

[0007] However, if SPM is supplied to the portion of the resist film that is easily removed from one side of the substrate for an extended period, then after the resist film is removed, SPM is supplied to the exposed portion of the substrate for an extended period. In this case, there is a possibility that a portion of the substrate may be damaged due to the oxidizing power of the SPM. In addition, the extended supply of SPM increases the amount of SPM used per substrate.

[0008] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method that can remove unwanted films formed on one side of a substrate without damaging the substrate and reduce the amount of processing liquid used.

[0009] [Technical means to solve the problem]

[0010] A substrate processing apparatus according to one aspect of the present invention performs a removal process to remove a unwanted film formed on one side of a substrate by a processing solution containing persulfate, wherein the persulfate is generated by mixing the first solution and the second solution, wherein one of sulfuric acid and hydrogen peroxide water is used as a first solution and the other of sulfuric acid and hydrogen peroxide water is used as a second solution; the substrate processing apparatus includes: a nozzle for spraying the processing solution in a manner that impacts a plurality of portions of the one side of the substrate; and a first solution supply system including a first pipe connected to the nozzle for supplying the first solution to the nozzle through the first pipe. The second liquid supply system includes a plurality of second pipes, each connected to a plurality of different portions of the liquid flow path formed by the nozzle and the first pipe, and supplies the second liquid to the liquid flow path through any of the plurality of second pipes; and a control unit, which, during the removal process, controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions; the plurality of operating conditions are established by colliding a processing liquid having a film removal capability corresponding to each of the plurality of portions of the substrate with the portion, respectively.

[0011] According to another aspect of the present invention, a substrate processing method is a substrate processing method using a substrate processing apparatus. The substrate processing apparatus performs a removal process by removing a unwanted film formed on one side of a substrate using a processing solution containing persulfate. The persulfate is generated by mixing a first solution (sulfuric acid and hydrogen peroxide water) with a second solution (sulfuric acid and hydrogen peroxide water). The substrate processing apparatus includes: a nozzle for spraying the processing solution in a manner that impacts a plurality of portions of one side of the substrate; a first solution supply system including a first pipe connected to the nozzle for supplying the first solution to the nozzle via the first pipe; and a second solution supply system including a liquid supply system respectively connected to the nozzle and the first pipe. A plurality of second pipes, each having a different portion in the flow path, supply the second liquid to the first pipe through any one of the plurality of second pipes; the substrate processing method includes the following steps: obtaining information related to the film removal capability of the processing liquid supplied to each of the plurality of portions on one side of the substrate; based on the obtained information, setting operating conditions for the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions on one side of the substrate, in a manner that the processing liquids having corresponding film removal capabilities collide with each of the plurality of portions on the one side of the substrate; and controlling the first liquid supply system and the second liquid supply system based on the set operating conditions of the first liquid supply system and the second liquid supply system.

[0012] [Invention Effects]

[0013] According to the present invention, unwanted films formed on one side of a substrate can be removed without damaging the substrate and the amount of processing liquid used can be reduced. Attached Figure Description

[0014] Figure 1 This is a schematic diagram illustrating the configuration of a substrate processing apparatus according to an embodiment of the present invention.

[0015] Figure 2 It is used for explanation Figure 1 A top view of a substrate processing apparatus that includes a nozzle support and a nozzle moving device.

[0016] Figure 3 It means Figure 1 A block diagram illustrating the configuration of the control system for the substrate processing apparatus.

[0017] Figure 4 This is a graph illustrating an example of the time-series changes in the peeling state of the resist film during the removal process.

[0018] Figure 5This is another example of a graph showing the time-series changes in the peeling state of the resist film during the removal process.

[0019] Figure 6 This is a diagram showing a first specific example of a plurality of operating conditions set corresponding to a plurality of parts of the substrate W.

[0020] Figure 7 This is a diagram representing a second specific example of multiple operating conditions set corresponding to multiple parts of the substrate W.

[0021] Figure 8 It means Figure 1 A flowchart of an example of membrane removal processing in the control unit.

[0022] Figure 9 This is a schematic diagram illustrating the configuration of a substrate processing apparatus according to another embodiment.

[0023] Figure 10 This is a diagram illustrating an example of the configuration of three processing liquid supply devices in another embodiment. Detailed Implementation

[0024] Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the accompanying drawings. In the following description, substrate means substrate for FPD (Flat Panel Display), semiconductor substrate, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate, ceramic substrate, or solar cell substrate, etc., used in liquid crystal display devices or organic EL (Electro Luminescence) display devices.

[0025] Furthermore, the substrate processing apparatus described below is a single-piece substrate processing apparatus for removing unwanted films (in this example, resist films) formed on one side (main surface) of a substrate. In the removal process of this embodiment, the substrate on which the unwanted film is formed on one side is rotated in a horizontal position. SPM (sulfuric acid hydrogen peroxide mixture) is supplied as a processing solution to one side of the substrate. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide water (H2O2), containing persulfuric acid (H2SO5). Persulfuric acid is generated by a chemical reaction between sulfuric acid and hydrogen peroxide water, and has strong oxidizing power, dissolving the unwanted film by reacting with it. Thus, the unwanted film is peeled off and removed from one side of the substrate.

[0026] <1> Composition of substrate processing device

[0027] Figure 1 This is a schematic diagram illustrating the configuration of a substrate processing apparatus according to one embodiment of the present invention. Figure 1 As shown, the substrate processing apparatus 100 mainly includes a rotary chuck 1, a cup 2, a cup lifting device 2D, three processing liquid supply devices 3A, 3B, and 3C, a nozzle support 4, a nozzle moving device 5, a control unit 6, and an operation unit 9.

[0028] At least a portion of the substrate processing apparatus 100 is disposed within a chamber (not shown). The rotary chuck 1 includes a rotary motor 1a, a rotary base 1b, and chuck pins 1c. The rotary motor 1a is disposed at the bottom of the chamber, protruding upwards along its rotational axis. The rotary base 1b is in the shape of a circular plate and is horizontally mounted on the upper end of the rotational shaft of the rotary motor 1a. A plurality of chuck pins 1c are disposed on the upper surface of the rotary base 1b, holding the periphery of the substrate W. With the substrate W held by the plurality of chuck pins 1c, the rotary motor 1a is activated. As a result, the substrate W rotates about a vertical axis.

[0029] As described above, in this example, a mechanical rotary chuck 1 is used to hold the periphery of the substrate W. However, it is not limited to this; instead of a mechanical rotary chuck, an adsorption rotary chuck that adsorbs and holds the lower surface of the substrate W can be used.

[0030] A cup 2 is provided in a manner that surrounds the rotating chuck 1. The cup 2 is supported vertically by a cup lifting device 2D. The cup lifting device 2D includes a cylinder, etc., to move the cup 2 between two predetermined height positions (the upper position and the lower position described later).

[0031] The three processing fluid supply devices 3A, 3B, and 3C have basically the same configuration. Figure 1 The text describes the details of the configuration of the processing fluid supply device 3C. It explains the configuration of the processing fluid supply device 3C to represent three processing fluid supply devices 3A, 3B, and 3C.

[0032] The processing liquid supply device 3C mainly consists of a first liquid supply system 10, a second liquid supply system 20, and a nozzle 30. The first liquid supply system 10 includes a first liquid supply source 11, a first piping 12, a valve 12a, an adjusting unit 12b, and a stirring unit 12c. The first liquid supply source 11 is the source of sulfuric acid and is composed of common plant equipment or a liquid delivery device including a liquid storage unit. The upstream end of the first piping 12 is connected to the first liquid supply source 11. The downstream end of the first piping 12 is connected to the nozzle 30. The valve 12a, the adjusting unit 12b, and the stirring unit 12c are arranged sequentially from the upstream end to the downstream end of the first liquid supply source 11.

[0033] Valve 12a is, for example, a ball valve, which allows liquid to flow in the first pipe 12 when open and cuts off liquid flow in the first pipe 12 when closed. Adjustment unit 12b includes a flow regulator such as a motor needle valve or a regulator to adjust the flow rate of the liquid flowing in the first pipe 12. In this example, adjustment unit 12b is a motor needle valve. Stirring unit 12c is, for example, an online mixer that mixes multiple liquids (in this example, sulfuric acid and hydrogen peroxide water) flowing in the first pipe 12 by generating eddies or the like within the first pipe 12.

[0034] In this embodiment, in the liquid flow path formed by the first pipe 12 and the nozzle 30, the portion located between the adjusting section 12b and the stirring section 12c is referred to as the first portion MP1. The portion located between the stirring section 12c and the nozzle 30 is referred to as the second portion MP2, and the portion located at the nozzle 30 is referred to as the third portion MP3.

[0035] The second liquid supply system 20 includes a second liquid supply source 21, a second main pipe 22, a plurality of (three in this example) second auxiliary pipes 23, 24, and 25, a plurality of (three in this example) valves 23a, 24a, and 25a, and a plurality of (three in this example) adjustment units 23b, 24b, and 25b. The second liquid supply source 21 is the supply source of hydrogen peroxide water, and like the example of the first liquid supply source 11, it is composed of common equipment in the plant or a liquid delivery device including a liquid storage unit.

[0036] The upstream end of the second main pipe 22 is connected to the second liquid supply source 21. The second main pipe 22 has a plurality of branches (two in this example) arranged from upstream to downstream. The upstream ends of the second auxiliary pipes 23, 24, and 25 are respectively connected to the upstream branch of the second main pipe 22, the downstream branch of the second main pipe 22, and the downstream end of the second main pipe 22. On the other hand, the downstream ends of the second auxiliary pipes 23, 24, and 25 are respectively connected to the first part MP1, the second part MP2, and the third part MP3 of the above-mentioned liquid flow path.

[0037] In the second auxiliary pipe 23, valves 23a and adjusting parts 23b are arranged sequentially from upstream to downstream. In the second auxiliary pipe 24, valves 24a and adjusting parts 24b are arranged sequentially from upstream to downstream. In the second auxiliary pipe 25, valves 25a and adjusting parts 25b are arranged sequentially from upstream to downstream.

[0038] Valves 23a, 24a, and 25a have the same configuration as valve 12a. Additionally, adjusting parts 23b, 24b, and 25b have the same configuration as adjusting part 12b. However, some of valves 12a, 23a, 24a, and 25a may have a different configuration than the other valves. Furthermore, some adjusting parts 12b, 23b, 24b, and 25b may have a different configuration than the other adjusting parts.

[0039] In each of the three processing liquid supply devices 3A, 3B, and 3C mentioned above, a portion of the first liquid supply system 10 and a portion of the second liquid supply system 20 are constructed using, for example, a rigid resin arm member 7 ( Figure 2 ) support.

[0040] Figure 2 It is used for explanation Figure 1 A top view of the substrate processing apparatus 100, showing the functions of the nozzle support 4 and the nozzle moving device 5. Figure 2 As shown in the upper section, from a top view, a track 5r is provided at the bottom of the chamber, to the side of the rotating chuck 1 and the cup 2. The track 5r is positioned close to the rotating chuck 1 and the cup 2 and extends in one direction. In the following description, the direction in which the track 5r extends from a top view is referred to as the track direction. Furthermore, from a top view, a straight line passing through the center of the substrate W held by the rotating chuck 1 and extending in the track direction is referred to as the imaginary line VL.

[0041] Each of the three treatment fluid supply devices 3A, 3B, and 3C has an arm member 7, for example, a rod shape, supporting a nozzle 30 at its front end. A nozzle support 4 supports the three arm members 7 with the three nozzles 30 arranged on an imaginary line VL, and is movably mounted on a track 5r. A motor, forming part of a nozzle moving device 5, is installed in the nozzle support 4. Thus, the nozzle support 4 moves on the track 5r via the nozzle moving device 5.

[0042] In the substrate processing apparatus 100, a standby position WP is provided at a position on an imaginary line VL that offsets from the rotating chuck 1 and cup 2 when viewed from above. Additionally, a processing position PP is provided at a position on an imaginary line VL that overlaps with the rotating chuck 1 when viewed from above. When the substrate processing apparatus 100 is in a standby state where no removal processing is performed, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C... Figure 2 As shown in the upper section, it is held in the standby position WP when viewed from above. On the other hand, when the substrate processing apparatus 100 performs a removal process, the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C are as follows: Figure 2 As shown in the lower section, it is held in the processing position PP from a top view.

[0043] In this embodiment, during the removal process, the three nozzles 30 are held in the processing position PP, and the three nozzles 30 are positioned at a predetermined position relative to the substrate W held by the rotating chuck 1.

[0044] Specifically, the nozzle 30 of the processing liquid supply device 3A is positioned at the center of the substrate W (described later as the internal portion R1) when viewed from above. Figure 4 The nozzles 30 of the processing liquid supply device 3B are positioned in an overlapping manner. Additionally, the nozzles 30 are positioned at the midpoint between the center of the substrate W and the outer periphery of the substrate W (described later as the midpoint R2) as viewed from above. Figure 4 The nozzles 30 of the processing liquid supply device 3C are positioned in an overlapping manner with the peripheral portion (the outer portion R3 described later) of the substrate W when viewed from above. Figure 4 The nozzles 30 are positioned in an overlapping manner. In this positioned state, each nozzle 30 is supported with its outlet facing one side of the substrate W. Therefore, during the removal process, processing liquid is sprayed from the outlet of each nozzle 30 into three portions of one side of the substrate W. The sprayed processing liquid collides with one side of the substrate W (more precisely, one side of the substrate W or the resist film covering one side of the substrate W).

[0045] Furthermore, the substrate processing apparatus 100 of this embodiment includes a cleaning nozzle (not shown) and a cleaning fluid supply system (not shown) for supplying cleaning fluid to the cleaning nozzle. After the resist film is removed by the processing fluid, the cleaning nozzle sprays cleaning fluid onto one side of the substrate W where the processing fluid remains. This removes the processing fluid from the substrate W (cleaning process). Details regarding the control unit 6 and the operation unit 9 will be described later.

[0046] <2> Control system of substrate processing device

[0047] Regarding the control system of the substrate processing apparatus 100, and Figure 1 The structure of the control unit 6 and the operation unit 9 will be explained together. Figure 3 It means Figure 1 A block diagram illustrating the configuration of the control system of the substrate processing apparatus 100. (See diagram below.) Figure 3 As shown, the control unit 6 includes a CPU (Central Processing Unit) 61, RAM (Random Access Memory) 62, ROM (Read Only Memory) 63 and a storage device 64.

[0048] RAM 62 is used as the operating area of ​​CPU 61. ROM 63 stores the system program. Storage device 64 includes a storage medium such as a hard disk or semiconductor memory, storing a film removal program for performing the removal process. Furthermore, storage device 64 stores a plurality of operating conditions of the substrate processing apparatus 100 related to the removal process. These plurality of operating conditions are conditions that correspond to a plurality of portions of the substrate W to be removed. Details of the plurality of operating conditions will be described later.

[0049] Furthermore, the film removal program can be provided in the form of a recording medium such as a CD-ROM (Compact Disc-Read Only Memory) 65 and installed in the ROM 63 or storage device 64. Alternatively, the film removal program can be sent from a server outside the substrate processing device 100 via a communication network and installed in the ROM 63 or storage device 64.

[0050] The CPU 61 executes the film removal program and controls the operation of each part of the substrate processing apparatus 100 during the removal process. Specifically, the control unit 6 rotates the substrate W by controlling the rotary motor 1a while the substrate W is placed on the rotating base 1b and held by a plurality of chuck pins 1c.

[0051] Additionally, the control unit 6 controls the cup lifting device 2D to maintain the cup 2 in a lower position when the substrate W is placed on the rotating chuck 1, when the substrate W is removed from the rotating chuck 1, and when no removal process is performed. Here, the lower position is the position of the cup 2 when the upper end of the cup 2 is below the substrate W held by the rotating chuck 1.

[0052] Additionally, the control unit 6 controls the cup lifting device 2D to maintain the cup 2 in the upper position during the removal process. Here, the upper position is the position of the cup 2 when its upper end is above the substrate W held by the rotating chuck 1 and the inner circumferential surface of the cup 2 faces the outer circumferential end of the substrate W in the horizontal plane. In this case, the processing liquid that splashes from the substrate W during the removal process is caught by the inner circumferential surface of the cup 2. The processing liquid caught by the cup 2 is discarded through the drain pipe.

[0053] Additionally, the control unit 6 controls the nozzle moving device 5 to keep the three nozzles 30 of the three treatment fluid supply devices 3A, 3B, and 3C in the treatment position PP during the removal process. Furthermore, the control unit 6 controls the nozzle moving device 5 to keep the three nozzles 30 of the three treatment fluid supply devices 3A, 3B, and 3C in the standby position WP when the removal process is not in progress.

[0054] As described above, the storage device 64 of the control unit 6 stores a plurality of operating conditions of the substrate processing device 100 related to the removal process. Among the plurality of operating conditions, there is information related to the operation of each of the plurality of valves 12a, 23a, 24a, 25a and the plurality of adjustment units 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, 3C.

[0055] During the removal process, the control unit 6 controls multiple valves 12a, 23a, 24a, and 25a and multiple adjustment units 12b, 23b, 24b, and 25b of the three treatment liquid supply devices 3A, 3B, and 3C based on multiple operating conditions. In this case, in each treatment liquid supply device 3A, 3B, and 3C, with sulfuric acid flowing through the first piping 12, hydrogen peroxide water is supplied from the second liquid supply system 20 to at least two of the first section MP1, the second section MP2, and the third section MP3 of the liquid flow path. Thus, sulfuric acid and hydrogen peroxide water are mixed multiple times within the liquid flow path to generate a treatment liquid (SPM).

[0056] Figure 1 The operation unit 9 includes a keyboard and pointing devices, and is configured to be operated by a user. The user can input the aforementioned multiple action conditions by operating the operation unit 9. When multiple action conditions are input in the operation unit 9, the control unit 6 stores the input action conditions in the storage device 64.

[0057] <3> Membrane removal ease and the membrane removal capacity of the treatment solution

[0058] In the following description, the ease with which the resist film can be removed during the removal process is referred to as ease of removal. "High ease of removal" means that the resist film is easy to remove, and "low ease of removal" means that the resist film is difficult to remove.

[0059] The ease of removal of a substrate W can vary across multiple portions of one side of the substrate W, depending on factors such as the material of the resist film formed on the substrate W, the thickness distribution of the resist film, and the distribution of adhesion between the resist film and the substrate W. The distribution of ease of removal across one side of a substrate W can be understood to some extent by performing a removal process on a sample substrate of the same type as the substrate W beforehand, or by simulating the removal process.

[0060] Furthermore, in the following description, the ability of the processing solution to remove the resist film is referred to as film removal capability. The degree of film removal capability indicates the reactivity of the processing solution with the resist film formed on the substrate W, and is mainly determined by the concentration of persulfate in the processing solution.

[0061] Figure 4This is a graph illustrating an example of the time-series change in the peeling state of the resist film during the removal process. Figure 4 The top view, showing the state of the resist film when a processing solution with common film removal capability is supplied to the entire surface of one side of substrate W, is presented in chronological order, from top to bottom. Figure 4 In the upper, middle and lower sections, the resist film present on the substrate W is shown in a dot pattern.

[0062] In addition, such as Figure 4 The time-series changes in the peeling state of the resist film as shown can be obtained, for example, by taking pictures of one side of the substrate W in the removal process with a camera at predetermined intervals.

[0063] Here, on one side of the substrate W, an inner portion R1, a middle portion R2, and an outer portion R3 are defined. The inner portion R1 is located at the center of the substrate W. The middle portion R2 has an annular shape and surrounds the inner portion R1. The outer portion R3 has an annular shape that includes the outer peripheral end of the substrate W and surrounds the middle portion R2. The radius of the inner portion R1, the width of the middle portion R2 of the substrate W in the radial direction, and the width of the outer portion R3 of the substrate W in the radial direction are all equal.

[0064] exist Figure 4 In the example, after the removal process begins, the resist film is removed sequentially from the center of substrate W towards its outer periphery. Therefore, it can be seen that... Figure 4 The substrate W corresponding to the example has a high removal ease in the inner part R1, a medium removal ease in the middle part R2, and a low removal ease in the outer part R3.

[0065] Therefore, it can be concluded that for the relationship with Figure 4 For the substrate W corresponding to the example, it is preferable to supply a processing liquid with a low film removal capability to the inner portion R1. In this case, by supplying a processing liquid with a low film removal capability to the inner portion R1, damage to the inner portion R1 on one side of the substrate W during the removal process can be suppressed.

[0066] Furthermore, it can be seen that, regarding the relationship with Figure 4 For the substrate W corresponding to the example, it is preferable to supply a processing solution with high film removal capability to the outer portion R3. In this case, by supplying a processing solution with high film removal capability to the outer portion R3, the resist film on the outer portion R3 can be removed efficiently during the removal process. That is, the processing time for removing the resist film on the outer portion R3 can be reduced.

[0067] Furthermore, it can be seen that, regarding and Figure 4 For the substrate W corresponding to the example, it is preferable to supply a processing solution with a moderate degree of film removal capability to the central portion R2.

[0068] Figure 5 This is another example of a graph showing the time-series changes in the peeling state of the resist film during the removal process. Figure 5 In, with Figure 4 Similarly, a top view showing the state of the resist film when a processing solution with a common film removal capability is supplied to the entire surface of one side of substrate W is displayed in chronological order, from top to bottom. Figure 5 In the upper, middle and lower sections, the resist film present on the substrate W is shown in a dot pattern.

[0069] exist Figure 5 In the example, after the removal process begins, the resist film is removed sequentially from the outer periphery of the substrate W towards the center of the substrate W. Therefore, it can be seen that... Figure 5 The substrate W corresponding to the example has low removal ease in the inner part R1, medium removal ease in the middle part R2, and high removal ease in the outer part R3.

[0070] Therefore, it can be concluded that for the relationship with Figure 5 For the substrate W corresponding to the example, it is preferable to supply a processing solution with high film removal capability to the inner portion R1. Furthermore, it is known that for... Figure 5 For the substrate W corresponding to the example, it is preferable to supply a processing solution with a low film removal capacity to the outer portion R3. Furthermore, it is understood that it is preferable to supply a processing solution with a moderate film removal capacity to the middle portion R2.

[0071] like Figure 4 and Figure 5 The distribution of the ease of removal of the resist film in the substrate W shown can be understood to some extent by performing a removal process on a sample substrate W in advance or by conducting simulation. In addition, based on the understood distribution of the ease of removal, the film removal capacity of the processing solution supplied to each of the plurality of parts of the substrate W can be predicted as described above.

[0072] In this embodiment, the film removal capability of the processing liquid supplied to each of the plurality of portions of the substrate W is predicted based on the ease of removal of the resist film in one side of the substrate W to be processed. Furthermore, information indicating the relationship between each of the plurality of portions of the substrate W and the preferred film removal capability corresponding to that portion is obtained as substrate portion information.

[0073] exist Figure 1 In the substrate processing apparatus 100, three processing liquid supply devices 3A, 3B, and 3C are respectively provided corresponding to the inner part R1, the middle part R2, and the outer part R3 of the substrate W. The film removal capability of the processing liquid ejected from the nozzles 30 of each of the processing liquid supply devices 3A, 3B, and 3C can be adjusted by controlling the operation of each part of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device.

[0074] Therefore, in this embodiment, based on the obtained substrate portion information, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3A corresponding to the inner portion R1 of the substrate W are determined. Furthermore, based on the substrate portion information, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3B corresponding to the middle portion R2 of the substrate W are determined. Furthermore, based on the substrate portion information, the operating conditions of the first liquid supply system 10 and the second liquid supply system 20 of the processing liquid supply device 3C corresponding to the outer portion R3 of the substrate W are determined. Additionally, for example, a user can operate the operation unit 9 to input multiple operating conditions corresponding to multiple portions of the substrate W (in this example, the inner portion R1, the middle portion R2, and the outer portion R3), and store them in... Figure 3 Storage device 64.

[0075] <4> Relationship between the membrane removal capacity of the treatment fluid and the operating conditions of the treatment fluid supply device

[0076] As mentioned above, the degree of film removal capability indicates the reactivity of the processing solution with the resist film formed on the substrate W, and is mainly determined by the concentration of persulfate in the processing solution. Figure 1 In each of the three treatment fluid supply devices 3A, 3B, and 3C, the membrane removal capacity of the treatment fluid ejected from the nozzle 30 can be adjusted by controlling a plurality of valves 12a, 23a, 24a, and 25a and a plurality of adjustment parts 12b, 23b, 24b, and 25b.

[0077] Here, refer to Figure 1 This section explains the generation mechanism of persulfuric acid in the treatment liquid of each of the treatment liquid supply devices 3A, 3B, and 3C. To eject the treatment liquid from nozzle 30, firstly, valve 12a is opened. Additionally, the regulating section 12b is controlled to allow sulfuric acid to flow at a predetermined flow rate in the first piping 12. Next, valve 23a is opened, and the regulating section 23b is controlled to allow hydrogen peroxide water to flow at a predetermined flow rate in the second auxiliary piping 23. In this case, in the first piping 12, sulfuric acid and hydrogen peroxide water merge in the first section MP1 and are transported to the stirring section 12c. In the stirring section 12c, the sulfuric acid and hydrogen peroxide water are stirred. This promotes the chemical reaction between the sulfuric acid and hydrogen peroxide water, generating persulfuric acid.

[0078] Heat is generated during the formation of persulfuric acid. Therefore, the temperature of the treatment liquid (mixture) flowing in the stirring section 12c rises. When the temperature of the treatment liquid exceeds a predetermined temperature (e.g., around the boiling point of hydrogen peroxide water), a portion of the hydrogen peroxide water (hydrogen peroxide water that does not contribute to the formation of persulfuric acid) easily decomposes into water and oxygen. Therefore, the amount of persulfuric acid generated in the first piping 12 from the first section MP1 to the stirring section 12c is limited.

[0079] Therefore, in the above-mentioned treatment liquid supply devices 3A, 3B, and 3C, new hydrogen peroxide water can be supplied to the second part MP2 and the third part MP3, which are downstream of the stirring part 12c, respectively, in the liquid flow path through the first pipe 12.

[0080] For example, as described above, when persulfuric acid is generated in the stirring section 12c, valve 24a is opened, and hydrogen peroxide water flows into the second auxiliary pipe 24 at a predetermined flow rate, while adjusting the regulating section 24b. In this case, new persulfuric acid is generated by supplying fresh, non-heat-treated hydrogen peroxide water to the second section MP2. As a result, the concentration of persulfuric acid in the processing liquid flowing in the first pipe 12 further downstream of the second section MP2 increases compared to the processing liquid flowing in the stirring section 12c.

[0081] Alternatively, as described above, while persulfuric acid is being generated in the stirring section 12c, valve 25a is opened, and hydrogen peroxide water flows into the second auxiliary pipe 25 at a predetermined flow rate, while adjusting the regulating section 25b. In this case, new persulfuric acid is generated by supplying fresh, non-heat-treated hydrogen peroxide water to the third section MP3. As a result, the concentration of persulfuric acid in the treatment liquid ejected from nozzle 30 increases compared to the treatment liquid flowing in the stirring section 12c.

[0082] The inventors conducted various experiments and simulations, and the results confirmed that the concentration of sulfuric acid in the treatment solution varies depending on the mixing ratio of sulfuric acid to hydrogen peroxide water in each of the multiple sections (MP1, MP2, MP3) of the flow path. Furthermore, the inventors observed that when sulfuric acid and hydrogen peroxide water are mixed in the multiple sections (MP1, MP2, MP3) of the flow path, increasing the mixing ratio of hydrogen peroxide water to sulfuric acid in the downstream section compared to the upstream section tends to increase the concentration of sulfuric acid in the treatment solution ejected from nozzle 30.

[0083] Furthermore, the inventors have observed that the concentration of sulfuric acid in the treated solution generated by mixing sulfuric acid and hydrogen peroxide water at a predetermined mixing ratio in Part 1 MP1 and Part 2 MP2 tends to be higher than the concentration of sulfuric acid in the treated solution generated by mixing sulfuric acid and hydrogen peroxide water at a predetermined mixing ratio in Part 1 MP1 and Part 3 MP3. Specifically, the inventors have observed that the further the portion of hydrogen peroxide water is located in the liquid flow path from the nozzle 30, the higher the concentration of sulfuric acid in the treated solution ejected from the nozzle 30 tends to be.

[0084] Therefore, based on the insights obtained, the inventors considered setting the operating conditions of the processing liquid supply devices 3A, 3B, and 3C in a manner that generates a processing liquid having a film removal capability corresponding to each of the plurality of portions of the substrate. In other words, the inventors considered setting the operating conditions of the processing liquid supply devices 3A, 3B, and 3C in a manner that generates a processing liquid having a persulfate concentration corresponding to each of the plurality of portions of the substrate.

[0085] <5> The first specific example of a plurality of action conditions

[0086] In the following description, when distinguishing between a plurality of second auxiliary pipes 23, 24, 25 in a processing fluid supply device, the second auxiliary pipe 23 is referred to as "pipe A", the second auxiliary pipe 24 as "pipe B" and the second auxiliary pipe 25 as "pipe C".

[0087] Figure 6 This is a diagram illustrating a first specific example of a plurality of operating conditions set corresponding to a plurality of portions of the substrate W. Figure 6 In this diagram, a table is used to illustrate the operating conditions of three processing liquid supply devices 3A, 3B, and 3C, respectively located in the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W. Below the table, explanatory diagrams of several parts of the substrate W are shown for ease of understanding. Furthermore, configuration diagrams of each processing liquid supply device 3A, 3B, and 3C for ease of understanding are shown.

[0088] Figure 6 The first specific example is set up as follows: a substrate W with a resist film in the inner portion R1 having high removal ease, the middle portion R2 having slightly high removal ease, and the outer portion R3 having low removal ease is configured. In this case, for the substrate W, it is preferable to supply a processing solution with low film removal ability to the inner portion R1, to supply a processing solution with slightly low film removal ability to the middle portion R2, and to supply a processing solution with high film removal ability to the outer portion R3.

[0089] Therefore, in this example, as an operating condition for the processing liquid supply device 3A corresponding to the internal part R1, the target ratio of the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B and pipe C is set to 100:10:0:90 so that the concentration of persulfate in the generated processing liquid becomes lower.

[0090] In addition, in this example, as an operating condition for the processing liquid supply device 3B corresponding to the middle part R2, the target ratio of the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B and pipe C is set to 100:20:0:80 so that the concentration of persulfate in the generated processing liquid becomes slightly lower.

[0091] Furthermore, in this example, as an operating condition for the processing liquid supply device 3C corresponding to the external part R3, the target ratio of the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B and pipe C is set to 100:30:70:0 in such a way that the concentration of persulfate in the generated processing liquid increases.

[0092] As a result, in the substrate processing apparatus 100 according to Figure 6 When multiple operating conditions are met, valves 12a, 23a, 24a, and 25a in the processing fluid supply device 3A are in the open state. Furthermore, adjusting units 12b, 23b, 24b, and 25b are controlled respectively to achieve a target ratio of 100:10:0:90 for the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B, and pipe C. In addition, since the target ratio for pipe B is 0, valve 24a of pipe B can be set to the closed state.

[0093] Furthermore, in the processing fluid supply device 3B, valves 12a, 23a, 24a, and 25a are in the open state. Then, adjusting units 12b, 23b, 24b, and 25b are controlled respectively with a target ratio of 100:20:0:80 for the flow rates of the fluids flowing in the first pipe 12, pipe A, pipe B, and pipe C. In addition, in this case, since the target ratio for pipe B is 0, valve 24a of pipe B can be set to the closed state.

[0094] Furthermore, in the processing fluid supply device 3C, valves 12a, 23a, 24a, and 25a are in the open state. Then, adjusting units 12b, 23b, 24b, and 25b are controlled respectively with a target ratio of 100:30:70:0 for the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B, and pipe C. In addition, in this case, since the target ratio for pipe C is 0, valve 25a of pipe B can be set to the closed state.

[0095] <6> The second specific example of multiple action conditions

[0096] Figure 7 This is a diagram illustrating a second specific example of multiple operating conditions set corresponding to multiple portions of the substrate W. Figure 7 In, with Figure 6 Similarly, a table is used to show the operating conditions of the three processing liquid supply devices 3A, 3B, and 3C, which are respectively located in the inner part R1, the middle part R2, and the outer part R3 of the substrate W. Below the table, explanatory diagrams of several parts of the substrate W are shown for ease of understanding the table. Furthermore, configuration diagrams of each processing liquid supply device 3A, 3B, and 3C for ease of understanding the table are shown.

[0097] Figure 7 The second specific example is set up as a substrate W with a resist film that has high removal ease in the inner portion R1, high removal ease in the middle portion R2, and low removal ease in the outer portion R3. In this case, for the substrate W, it is preferable to supply a processing solution with low film removal ability to the inner portion R1, preferably to supply a processing solution with low film removal ability to the middle portion R2, and preferably to supply a processing solution with high film removal ability to the outer portion R3.

[0098] In this example, among the three treatment fluid supply devices 3A, 3B, and 3C, the flow rate of the liquid flowing in the first pipe 12 is predetermined when valve 12a is open. Similarly, the flow rates of the liquid flowing in pipes A, B, and C are also predetermined when valves 23a, 24a, and 25a are open. In this case, the concentration of persulfate in the treatment fluid ejected from nozzle 30 varies depending on the opening / closing state of valve 12a in the first pipe 12, valve 23a in pipe A, valve 24a in pipe B, and valve 25a in pipe C.

[0099] Therefore, in this example, as an operating condition for the processing liquid supply device 3A corresponding to the internal part R1, the switching states of valves 12a, 23a, 24a, and 25a are set to "open", "open", "closed", and "open" respectively, so that the concentration of persulfate in the generated processing liquid decreases.

[0100] In addition, in this example, as an operating condition for the treatment liquid supply device 3B corresponding to the middle part R2, the switching states of valves 12a, 23a, 24a, and 25a are set to "open", "open", "closed", and "open" respectively, so that the concentration of persulfate in the generated treatment liquid decreases.

[0101] Furthermore, in this example, as an operating condition for the treatment liquid supply device 3C corresponding to the external part R3, the switching states of valves 12a, 23a, 24a, and 25a are set to "open", "open", "open", and "closed" respectively, in order to increase the concentration of persulfate in the generated treatment liquid.

[0102] As a result, in the substrate processing apparatus 100 according to Figure 7 When multiple operating conditions are met, in the processing fluid supply device 3A, valves 12a, 23a, and 25a are in the open state, and valve 24a is in the closed state. Similarly, in the processing fluid supply device 3B, valves 12a, 23a, and 25a are in the open state, and valve 24a is in the closed state. Furthermore, in the processing fluid supply device 3C, valves 12a, 23a, and 24a are in the open state, and valve 25a is in the closed state. Additionally, multiple adjusting units 12b, 23b, 24b, and 25b are controlled in a manner corresponding to predetermined flow rates for the first pipe 12, pipe A, pipe B, and pipe C, respectively.

[0103] <7> Membrane removal process of control unit 6

[0104] Figure 8 It means Figure 1 A flowchart of an example of the membrane removal process of the control unit 6. The membrane removal process described below is performed by the CPU 61 of the control unit 6 executing the membrane removal program stored in the storage device 64 on the RAM 62.

[0105] The film removal process of the control unit 6 begins, for example, when an untreated substrate W (a substrate W on which a resist film is formed entirely on one side) is moved into the chamber of the substrate processing apparatus 100 and placed on the rotary chuck 1. In the initial state, the cup 2 is in the lower position, and the plurality of nozzles 30 are in the standby position WP. In addition, the plurality of valves 12a, 23a, 24a, and 25a of the three processing liquid supply devices 3A, 3B, and 3C are all kept in the closed state. Furthermore, the storage device 64 of the control unit 6 stores the plurality of operating conditions of the three processing liquid supply devices 3A, 3B, and 3C corresponding to the plurality of parts (inner part R1, middle part R2, and outer part R3) of the substrate W to be processed.

[0106] When the membrane removal process begins, CPU 61 controls the cup lifting device 2D to move the cup 2 from the lower position to the upper position (step S11). Additionally, CPU 61 controls the rotary motor 1a to rotate the substrate W, which is held on the rotating base 1b by a plurality of chuck pins 1c (step S12). Furthermore, CPU 61 controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the standby position WP to the processing position PP (step S13).

[0107] Next, the CPU 61 reads a plurality of operating conditions stored in the storage device 64 (step S14). Then, based on the read plurality of operating conditions, the CPU 61 controls a plurality of valves 12a, 23a, 24a, 25a and adjustment sections 12b, 23b, 24b, 25b of the three processing liquid supply devices 3A, 3B, and 3C (step S15). As a result, processing liquids with corresponding film removal capabilities are supplied to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively.

[0108] In this example, the supply time of the processing solution used to remove the resist film is predetermined. Therefore, CPU61 measures the elapsed time from the start time of the process in step S15. In addition, based on whether the measured time has reached the predetermined supply time, CPU61 determines whether the supply of the processing solution should be stopped (step S16).

[0109] When the supply of the processing fluid should not be stopped, CPU61 repeats step S16. On the other hand, when the supply of the processing fluid should be stopped, CPU61 stops the supply of the processing fluid by setting multiple valves 12a, 23a, 24a, and 25a of the three processing fluid supply devices 3A, 3B, and 3C to the closed state (step S17).

[0110] Next, CPU 61 controls the nozzle moving device 5 to move the three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C from the processing position PP to the standby position WP (step S18). Additionally, CPU 61 controls a cleaning liquid supply system (not shown) and a rotary motor 1a to perform cleaning and drying processes on the substrate W with the resist film removed (step S19). The drying process in step S19 is a so-called rotary drying process, in which the cleaned substrate W is rotated at high speed to dry it.

[0111] After the drying process in step S19 is completed, CPU 61 stops the rotation of substrate W by controlling rotary motor 1a (step S20). In addition, CPU 61 moves cup 2 from the upper position to the lower position by controlling cup lifting device 2D (step S21), ending the series of processes.

[0112] <8> Effect

[0113] (a) In the substrate processing method of this embodiment, substrate portion information is obtained for each of a plurality of portions on one side of the substrate W, as information related to the film removal capability of the processing liquid to be supplied to that portion. Based on the substrate portion information, the operating conditions of the three processing liquid supply devices 3A, 3B, and 3C are set in the substrate processing apparatus 100.

[0114] During the removal process of the substrate processing apparatus 100, three processing liquid supply devices 3A, 3B, and 3C are controlled to meet multiple operating conditions corresponding to multiple portions (inner portion R1, middle portion R2, and outer portion R3) of one side of the substrate W. By appropriately setting the multiple operating conditions, processing liquids with appropriate film removal capabilities for removing the resist film are supplied to multiple portions of one side of the substrate W and collide with it. The film removal capability of the processing liquid is most effective when it is sprayed from the nozzle 30 and reaches the resist film on the substrate W (during collision). As a result, it is prevented that a useless resist film remains on a portion of one side of the substrate W, or that damage occurs on a portion of one side of the substrate W. In addition, it is not necessary to supply a large amount of processing liquid to the portion of the substrate W where the resist film is less removable.

[0115] As a result, the useless resist film formed on one side of the substrate W can be removed without damaging one side of the substrate W and the amount of processing solution used can be reduced.

[0116] (b) In the substrate processing apparatus 100 described above, three processing liquid supply devices 3A, 3B, and 3C are used, each corresponding to one of the three portions of the substrate W. The three nozzles 30 of the three processing liquid supply devices 3A, 3B, and 3C move between the standby position WP and the processing position PP via the nozzle support 4 and the nozzle moving device 5. When the three nozzles 30 are positioned at the processing position PP, they face the inner portion R1, the middle portion R2, and the outer portion R3 of one side of the substrate W, respectively. Therefore, by simultaneously operating the three processing liquid supply devices 3A, 3B, and 3C, processing liquid can be supplied simultaneously to multiple portions (inner portion R1, middle portion R2, and outer portion R3) of the substrate W from the three nozzles 30. This shortens the time required for removal processing compared to sequentially supplying processing liquid to multiple portions of one side of the substrate W using a single nozzle 30. As a result, contamination of the substrate W, such as particle adhesion, caused by prolonged processing time, is prevented.

[0117] <9> Other implementation methods

[0118] (a) The substrate processing apparatus 100 of the above embodiment includes processing liquid supply devices 3A, 3B, and 3C that correspond to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W, respectively, but the present invention is not limited thereto.

[0119] The substrate processing apparatus 100 may have only one processing liquid supply device. Figure 9 This is a schematic diagram illustrating the configuration of a substrate processing apparatus 100 according to another embodiment. Figure 9The substrate processing apparatus 100 includes only one processing liquid supply device 3, configured to supply processing liquid to the substrate W. In this substrate processing apparatus 100, during the removal process, the arm member 7 of the processing liquid supply device 3 (see reference 100) is used... Figure 2 It moves in the track direction. As a result, the processing liquid ejected from one nozzle 30 is sequentially supplied to a plurality of portions of one side of the substrate W.

[0120] In this example, before the removal process, multiple operating conditions corresponding to multiple portions of the substrate W are set for the substrate processing apparatus 100. Therefore, during the removal process, the operating state of each part of the processing liquid supply device 3 is switched according to the portion of the substrate W facing the nozzle 30.

[0121] For example, imagine in Figure 9 The substrate processing apparatus 100 is provided with Figure 6 In the case of multiple operating conditions, after the removal process begins, for example, the nozzle 30 is positioned facing the interior R1 of the substrate W. In this state, valves 12a, 23a, 24a, and 25a are set to the open state. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled respectively so that the ratio of the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B, and pipe C is a target ratio of 100:10:0:90.

[0122] Next, when the resist film in the inner portion R1 of the substrate W is removed, the nozzle 30 is positioned facing the middle portion R2 of the substrate W. In this state, valves 12a, 23a, 24a, and 25a are in the open state. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled respectively to achieve a target ratio of 100:20:0:80 for the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B, and pipe C.

[0123] Next, when the resist film in the middle portion R2 of the substrate W is removed, the nozzle 30 is positioned facing the outer portion R3 of the substrate W. In this state, valves 12a, 23a, 24a, and 25a are in the open state. Furthermore, the adjusting units 12b, 23b, 24b, and 25b are controlled respectively to achieve a target ratio of 100:30:70:0 for the flow rates of the liquids flowing in the first pipe 12, pipe A, pipe B, and pipe C.

[0124] As mentioned above, in Figure 9In the substrate processing apparatus 100, by moving one processing liquid supply device 3, a processing liquid with appropriate film removal capability is sequentially supplied to the inner portion R1, the middle portion R2, and the outer portion R3 of the substrate W. Therefore, it is unnecessary to provide a plurality of processing liquid supply devices 3 in the substrate processing apparatus 100. Thus, suppression... Figure 9 The increased number of parts in the substrate processing apparatus 100 simplifies its structure.

[0125] (b) In the substrate processing apparatus 100 of the above embodiment, the three processing liquid supply devices 3A, 3B, and 3C each have independent configurations, but the present invention is not limited thereto. A portion of the configurations of the three processing liquid supply devices 3A, 3B, and 3C can be used interchangeably among the three processing liquid supply devices 3A, 3B, and 3C.

[0126] Figure 10 This diagram illustrates an example of the configuration of three processing liquid supply devices 3A, 3B, and 3C according to another embodiment. Regarding... Figure 10 The composition of the three processing liquid supply devices 3A, 3B, and 3C is explained in relation to... Figure 1 The differences in the configuration of the three processing liquid supply devices 3A, 3B and 3C.

[0127] exist Figure 10 In the processing liquid supply device 3A, a branch section BP is provided in the portion between the stirring section 12c and the second part MP2 in the first pipe 12. Furthermore, a valve 12d is provided between the branch section BP and the second part MP2 in the first pipe 12. The branch section BP of the first pipe 12 is connected to the exterior of the processing liquid supply device 3A, extending to the upstream ends of two first pipes 12X and 12Y of the processing liquid supply devices 3B and 3C, respectively. Furthermore, in... Figure 10 In the processing liquid supply device 3A, the second main pipe 22 is led out from the second liquid supply source 21 to the outside of the processing liquid supply device 3A.

[0128] exist Figure 10 In the processing fluid supply device 3B, a nozzle 30 is connected to the downstream end of the first pipe 12X leading from the processing fluid supply device 3A. A valve 12d is also provided on the first pipe 12X, similar to the valve 12d in the processing fluid supply device 3A. In the fluid flow path formed by the first pipe 12X and the nozzle 30, the portion located between the valve 12d and the nozzle 30 is referred to as the fourth portion MP4. The portion located at the nozzle 30 is referred to as the fifth portion MP5.

[0129] A portion of the second main pipe 22, which originates from the processing fluid supply device 3A, is led into the processing fluid supply device 3B and further leads out from the processing fluid supply device 3B. Thus, a portion of the second main pipe 22 constitutes a part of the processing fluid supply device 3B. Two branch sections are provided in the portion of the second main pipe 22 that constitutes a part of the processing fluid supply device 3B. Two second auxiliary pipes 26 and 27 are connected to the fourth section MP4 and the fifth section MP5 of the fluid flow path, respectively. A valve 26a and an adjusting part 26b are provided in the second auxiliary pipe 26, and a valve 27a and an adjusting part 27b are provided in the second auxiliary pipe 27.

[0130] exist Figure 10 In the processing fluid supply device 3C, a nozzle 30 is connected to the downstream end of the first pipe 12Y leading from the processing fluid supply device 3A. A valve 12d is also provided on the first pipe 12Y, similar to the valve 12d in the processing fluid supply device 3A. In the fluid flow path formed by the first pipe 12Y and the nozzle 30, the portion located between the valve 12d and the nozzle 30 is referred to as the sixth portion MP6. The portion located at the nozzle 30 is referred to as the seventh portion MP7.

[0131] A portion of the second main pipe 22, which originates from the processing fluid supply device 3B, is led into the processing fluid supply device 3C. The downstream end of the second main pipe 22 is located within the processing fluid supply device 3C. Thus, the portion including the downstream end of the second main pipe 22 constitutes part of the processing fluid supply device 3C. A branch is provided in the portion of the second main pipe 22 that constitutes part of the processing fluid supply device 3C. Two second auxiliary pipes 28 and 29 are connected to the branch and downstream end of the second main pipe 22, respectively, and to the sixth portion MP6 and the seventh portion MP7 of the fluid flow path. A valve 28a and an adjusting part 28b are provided in the second auxiliary pipe 28, and a valve 29a and an adjusting part 29b are provided in the second auxiliary pipe 29.

[0132] In having the above-mentioned structure Figure 10 Of the three processing fluid supply devices 3A, 3B, and 3C, as shown in the double-dotted box, a portion of the processing fluid supply device 3A constitutes a common supply system 40 that is shared by the other processing fluid supply devices 3B and 3C.

[0133] Therefore, by setting valves 12a and 23a in the common supply system 40 to the open state, sulfuric acid and hydrogen peroxide water can be mixed in the stirring section 12c. In addition, by selectively switching valves 12d of the three treatment liquid supply devices 3A, 3B and 3C, the treatment liquid (the mixture of sulfuric acid and hydrogen peroxide water) passing through the stirring section 12c can be selectively supplied to the three nozzles 30.

[0134] Additionally, by switching the on / off states of valves 24a, 25a, 26a, 27a, 28a, and 29a of the three processing liquid supply devices 3A, 3B, and 3C, the supply and stop of hydrogen peroxide water from the second liquid supply source 21 to each liquid flow path can be switched. According to Figure 10 The configuration is simplified by using a portion of the three processing liquid supply devices 3A, 3B, and 3C, which reduces the increase in the number of parts in the substrate processing device 100.

[0135] (c) In the substrate processing apparatus 100 of the above embodiment, the three processing liquid supply devices 3A, 3B, and 3C can move in the horizontal plane in a manner that faces three or more portions on the substrate W during the removal process.

[0136] For example, the three processing liquid supply devices 3A, 3B, and 3C can supply processing liquid to three portions of the substrate W from three nozzles 30, and then move horizontally with the three nozzles 30 facing the other three portions of the substrate W. In this case, processing liquid can be further supplied to the other three portions of the substrate W. Thus, processing liquid with appropriate film removal capabilities can be supplied to more portions of the substrate W.

[0137] (d) The substrate processing apparatus 100 of the above embodiment has three processing liquid supply devices 3A, 3B, and 3C, but the present invention is not limited thereto. The substrate processing apparatus 100 may have two processing liquid supply devices, or it may have four or more processing liquid supply devices. In this case, the more processing liquid supply devices there are, the more portions of the substrate W can be processed simultaneously, thereby improving the processing efficiency of the substrate W. On the other hand, the fewer processing liquid supply devices there are, the less the increase in the number of parts of the substrate processing apparatus 100 is suppressed, and the configuration is simplified.

[0138] (e) In each of the processing liquid supply devices 3A, 3B, and 3C of the substrate processing apparatus 100 described in the above embodiment, the first liquid supply source 11 is a sulfuric acid supply source, and the second liquid supply source 21 is a hydrogen peroxide water supply source; however, the present invention is not limited thereto. In the above processing liquid supply devices 3A, 3B, and 3C, the first liquid supply source 11 may be a hydrogen peroxide water supply source, and the second liquid supply source 21 may be a sulfuric acid supply source.

[0139] (f) The second liquid supply system 20 of each of the above-described embodiments of the processing liquid supply devices 3A, 3B, and 3C has three second auxiliary pipes 23, 24, and 25 for mixing hydrogen peroxide water in sulfuric acid, but the present invention is not limited thereto. The second liquid supply system 20 may have only two second auxiliary pipes or may have four or more second auxiliary pipes. When the second liquid supply system 20 has four or more second auxiliary pipes, the mixing of sulfuric acid and hydrogen peroxide water can be carried out in four or more portions of the liquid flow path formed by the first pipe 12 and the nozzle 30. As a result, the degree of freedom of the operating conditions that can be set for generating the processing liquid is increased.

[0140] (g) In the above embodiment, an example is described in which sulfuric acid and hydrogen peroxide water are mixed in two portions of the first part MP1, the second part MP2, and the third part MP3 of the liquid flow path in order to generate the treatment liquid in each treatment liquid supply device 3A, 3B, and 3C. However, the present invention is not limited to this. The treatment liquid can be generated by mixing sulfuric acid and hydrogen peroxide water in all portions of the first part MP1, the second part MP2, and the third part MP3 of the liquid flow path.

[0141] (h) In the membrane removal process of the above embodiment, after the treatment solution containing persulfate is supplied to the substrate W, a cleaning process and a drying process are performed sequentially, but the present invention is not limited to this. The substrate processing apparatus 100 may also be equipped with a supply device (SC1 supply device) for supplying a mixture of ammonia and hydrogen peroxide solution (SC1) as another treatment solution to the substrate W held by the rotary chuck 1. In this case, between the above cleaning process and the drying process, the supply and stop of SC1 to the substrate W using the SC1 supply device, and additional cleaning processes for rinsing off the SC1 remaining on the substrate W can be performed.

[0142] <10> Correspondence between the various parts of the implementation method and the various components of the technical solution

[0143] The following describes examples of the correspondence between the constituent elements of the technical solution and the constituent elements of the implementation method. Other various elements having the structure or function described in the technical solution may also be used as constituent elements of the technical solution.

[0144] In the above embodiments, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the nozzle 30 is an example of a nozzle, the first pipe 12 is an example of a first pipe, the first liquid supply system 10 is an example of a first liquid supply system, the plurality of second auxiliary pipes 23, 24, and 25 are examples of a plurality of second pipes, the second liquid supply system 20 is an example of a second liquid supply system, and the control unit 6 is an example of a control unit.

[0145] In addition, the adjustment unit 12b is an example of the first flow adjustment unit, the adjustment units 23b, 24b, and 25b are examples of the second flow adjustment unit, the valves 23a, 24a, and 25a are examples of multiple switching valves, and the three nozzles 30 of the three processing fluid supply devices (3A, 3B, and 3C) are examples of multiple nozzles.

[0146] In addition, the three first liquid supply systems 10 of the three processing liquid supply devices (3A, 3B, 3C) are examples of multiple first liquid supply systems, the three second liquid supply systems 20 of the three processing liquid supply devices (3A, 3B, 3C) are examples of multiple second liquid supply systems, the nozzle support 4 is an example of a nozzle support, the nozzle moving device 5 is an example of a nozzle moving part, and the substrate information is an example of information related to the membrane removal capability of the processing liquid.

[0147] <11> Summary of implementation methods

[0148] (Item 1) The substrate processing apparatus of Item 1 performs a removal process to remove a non-desired film formed on one side of a substrate by a processing solution containing persulfate. The aforementioned persulfuric acid is generated by mixing the first solution and the second solution when one of sulfuric acid and hydrogen peroxide water is used as the first solution and the other of sulfuric acid and hydrogen peroxide water is used as the second solution. The aforementioned substrate processing apparatus includes: The nozzle sprays the above-mentioned treatment liquid in a manner that impacts a plurality of portions of the above-mentioned side of the substrate; The first liquid supply system includes a first pipe connected to the nozzle, through which the first liquid is supplied to the nozzle; The second liquid supply system includes a plurality of second pipes, each connected to a plurality of different portions of a liquid flow path formed by the nozzle and the first pipe, for supplying the second liquid to the liquid flow path through any one of the plurality of second pipes; and The control unit controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process. The aforementioned plurality of operating conditions are established by colliding a processing liquid having a film removal capability corresponding to each of the plurality of portions of the aforementioned surface of the substrate with the portion, thereby establishing conditions corresponding to each of the plurality of portions of the aforementioned substrate.

[0149] In this substrate processing apparatus, a first liquid is supplied to a nozzle via a first pipe of a first liquid supply system. Additionally, a second liquid is supplied to the first pipe via any one of a plurality of second pipes of a second liquid supply system. In this case, the first liquid and the second liquid flowing in the first pipe mix in any one of a plurality of sections of the first pipe. As a result, a processing liquid containing persulfate is generated within the first pipe and ejected from the nozzle.

[0150] The first and second liquid supply systems are controlled to operate according to a plurality of operating conditions during the removal process. As a result, a processing liquid having a membrane removal capability corresponding to that portion collides with each of a plurality of portions on one side of the substrate. The degree of membrane removal capability of the processing liquid indicates the level of reactivity of the processing liquid with the membrane on the substrate, and is primarily determined by the concentration of persulfate contained in the processing liquid.

[0151] On the other hand, the ease of removing unwanted films during removal processing (removal ease) varies across multiple portions on one side of the substrate, depending on factors such as the material constituting the film, the film thickness distribution, and the adhesion between the film and the substrate. The distribution of removal ease in the substrate to be processed can be understood to some extent by performing removal processing on a sample substrate beforehand or by conducting simulations.

[0152] If the distribution of ease of removal can be determined, the film removal capacity of the processing solution to be supplied to each of the plurality of portions on one side of the substrate can be predicted based on this distribution. For example, a processing solution with a higher film removal capacity can be supplied to portions of the substrate with lower ease of removal (difficult film removal). This reduces the processing time for these portions and suppresses the residue of unwanted film. On the other hand, a processing solution with a lower film removal capacity can be supplied to portions of the substrate with higher ease of removal (easy film removal). This removes the film and suppresses damage to the substrate portion of the film.

[0153] Based on the above configuration, the first liquid supply system and the second liquid supply system are controlled in a manner that meets multiple operating conditions corresponding to multiple portions of one side of the substrate. By appropriately setting the multiple operating conditions, a processing liquid with appropriate film removal capability for film removal is supplied to each of the multiple portions of one side of the substrate. Therefore, it is prevented that a portion of the undesired film remains on one side of the substrate, or that damage occurs on one side of the substrate. In addition, it is not necessary to supply a large amount of processing liquid to the portion of the substrate where the film is less removable.

[0154] As a result, unwanted films formed on one side of the substrate can be removed without damaging one side of the substrate, and the amount of processing solution used can be reduced.

[0155] (Item 2) In the substrate processing apparatus of Item 1, it may also be

[0156] The aforementioned first liquid supply system includes a first flow adjustment unit that adjusts the flow rate of the first liquid flowing in the aforementioned first piping; The aforementioned second liquid supply system includes a plurality of second flow adjustment units, each of which adjusts the flow rate of the second liquid flowing in the plurality of second piping respectively; The aforementioned plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing in each of the plurality of portions of the aforementioned surface of the aforementioned substrate and the flow rate of the first liquid flowing in the aforementioned first pipe, corresponding to each of the plurality of portions of the aforementioned surface of the aforementioned substrate. During the removal process, the control unit controls the first flow rate adjustment unit and the plurality of second flow rate adjustment units in such a way that the ratio between the flow rate of the second liquid flowing in each second pipe and the flow rate of the first liquid flowing in the first pipe is a target ratio corresponding to that portion for each part of the substrate to be impacted by the treatment liquid ejected from the nozzle.

[0157] The film removal capability of the processing liquid ejected from the nozzle onto the substrate is determined by the ratio between the flow rate of the second liquid flowing in each second pipe and the flow rate of the first liquid flowing in the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions of one side of the substrate, processing liquids with appropriate film removal capabilities are supplied to a plurality of portions of one side of the substrate.

[0158] (Item 3) In the substrate processing apparatus of Item 1, it may also be

[0159] The aforementioned second liquid supply system also includes a plurality of switching valves respectively disposed on the plurality of the plurality of second piping; The aforementioned plurality of operating conditions include establishing the switching states of the aforementioned plurality of switching valves corresponding to each of the aforementioned plurality of portions of the aforementioned surface of the aforementioned substrate. During the removal process, the control unit controls the plurality of switching valves in such a way that the switching state of the plurality of switching valves corresponds to the switching state of each part of the substrate that the processing liquid ejected from the nozzle is to collide with.

[0160] The film removal capability of the processing liquid ejected from the nozzle onto the substrate depends on which of the plurality of second pipes supplies the second liquid to the first pipe. Therefore, by appropriately setting a plurality of switching states corresponding to a plurality of portions of one side of the substrate, a processing liquid with an appropriate film removal capability is supplied to a plurality of portions of one side of the substrate respectively.

[0161] (Item 4) In the substrate processing apparatus of items 1 to 3, it may also be

[0162] The nozzles described above include a plurality of nozzles that correspond to the plurality of portions of the plurality of sides of the substrate described above; The aforementioned first liquid supply system includes a plurality of first liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned second liquid supply system comprises a plurality of second liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned substrate processing apparatus also includes: The nozzle support supports the plurality of nozzles such that the outlets of the processing liquid from the plurality of nozzles are respectively facing the plurality of portions of the aforementioned side of the substrate.

[0163] In this case, by simultaneously operating multiple first liquid supply systems and multiple second liquid supply systems, processing liquid can be supplied to multiple portions of the substrate simultaneously from multiple nozzles. Therefore, compared to using a single nozzle to sequentially supply processing liquid to multiple portions of one side of the substrate, the time required for removal processing can be shortened. This prevents substrate contamination such as particle adhesion caused by prolonged processing time.

[0164] (Item 5) In the substrate processing apparatus of items 1 to 3, it may also be

[0165] The aforementioned substrate processing apparatus also includes: The nozzle moving part supports the nozzle at a position above the substrate and allows the nozzle to move relative to the substrate in a horizontal plane. During the removal process, the control unit controls the nozzle movement unit by sequentially colliding the processing liquid ejected from the nozzle with multiple portions of one side of the substrate.

[0166] In this case, it is not necessary to prepare multiple nozzles to spray the processing liquid onto multiple portions of the substrate. Therefore, the number of parts in the substrate processing apparatus is reduced, and the configuration is simplified.

[0167] (Item 6) The substrate processing method of Item 6 is a substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus performs a removal process to remove a non-desired film formed on one side of the substrate by a processing solution containing persulfate. The aforementioned persulfuric acid is generated by mixing the first solution and the second solution when one of sulfuric acid and hydrogen peroxide water is used as the first solution and the other of sulfuric acid and hydrogen peroxide water is used as the second solution. The aforementioned substrate processing apparatus includes: The nozzle sprays the above-mentioned treatment liquid in a manner that impacts a plurality of portions of the above-mentioned side of the substrate; A first liquid supply system includes a first pipe connected to the nozzle, through which the first liquid is supplied to the nozzle; and The second liquid supply system includes a plurality of second pipes that are connected to a plurality of different portions of the liquid flow path formed by the nozzle and the first pipe, and supplies the second liquid to the first pipe through any of the plurality of second pipes. The above substrate processing method includes the following steps: For each of the plurality of portions on the aforementioned side of the aforementioned substrate, information related to the membrane removal capability of the processing liquid supplied to that portion is obtained; Based on the information obtained above, the operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate are set by colliding the plurality of portions of the substrate with processing liquids having corresponding film removal capabilities; and The first liquid supply system and the second liquid supply system are controlled based on the established operating conditions of the first liquid supply system and the second liquid supply system.

[0168] The ease of removing unwanted films during removal processing (removal ease) varies across multiple portions on one side of the substrate, depending on factors such as the material constituting the film, the film thickness distribution, and the adhesion between the film and the substrate. The distribution of removal ease in the substrate to be processed can be understood to some extent by performing removal processing on a sample substrate beforehand or by conducting simulations.

[0169] If the distribution of removability can be determined, the membrane removal capacity of the processing solution to be supplied to each of the plurality of portions on one side of the substrate can be predicted based on this distribution. For example, a processing solution with a higher membrane removal capacity can be supplied to portions of the substrate with lower removability (difficult membrane removal). This reduces the processing time for these portions and suppresses the residue of unwanted membranes. On the other hand, a processing solution with a lower membrane removal capacity can be supplied to portions of the substrate with higher removability (easy membrane removal). This removes the membrane and suppresses damage to the substrate portion of the membrane. The degree of membrane removal capacity of the processing solution indicates the reactivity of the processing solution with the membrane on the substrate, and is mainly determined by the concentration of persulfate contained in the processing solution.

[0170] In the above-described substrate processing method, information related to the film removal capability of the processing liquid to be supplied to each of a plurality of portions on one side of the substrate is obtained. Based on the obtained information related to the film removal capability of the processing liquid, operating conditions for the first liquid supply system and the second liquid supply system are set. The first liquid supply system and the second liquid supply system are controlled in a manner that meets the plurality of operating conditions corresponding to the plurality of portions on one side of the substrate.

[0171] When controlling the first liquid supply system and the second liquid supply system, the first liquid is supplied to the nozzle through the first pipe of the first liquid supply system. Additionally, the second liquid is supplied to the first pipe through any one of the plurality of second pipes of the second liquid supply system. In this case, the first liquid and the second liquid flowing in the first pipe mix in any one of the plurality of sections of the first pipe. A treatment liquid containing persulfate is generated in the first pipe and ejected from the nozzle. Thus, the treatment liquid having the membrane removal capability corresponding to that section collides with each of the plurality of sections on one side of the substrate.

[0172] By appropriately setting multiple operating conditions, a processing liquid with suitable film removal capability is supplied to multiple portions of one side of the substrate for film removal. Therefore, the residue of unwanted film on one side of the substrate, or damage to one side of the substrate, is prevented. Furthermore, it eliminates the need to supply large amounts of processing liquid to portions of the substrate that are less removable.

[0173] As a result, unwanted films formed on one side of the substrate can be removed without damaging one side of the substrate, and the amount of processing solution used can be reduced.

[0174] (Item 7) In the substrate processing method of Item 6, it is also possible to...

[0175] The aforementioned plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing in each of the plurality of portions of the aforementioned surface of the aforementioned substrate and the flow rate of the first liquid flowing in the aforementioned first pipe, corresponding to each of the plurality of portions of the aforementioned surface of the aforementioned substrate. The steps of controlling the first liquid supply system and the second liquid supply system include: during the removal process, for each part of the substrate to be impacted by the processing liquid ejected from the nozzle, adjusting the flow rate of the first liquid flowing in the first pipe and adjusting the flow rate of the second liquid flowing in each of the second pipes respectively to establish a target ratio corresponding to that part, such that the ratio between the flow rate of the second liquid flowing in each second pipe and the flow rate of the first liquid flowing in the first pipe is equal to the target ratio corresponding to that part.

[0176] The film removal capability of the processing liquid ejected from the nozzle onto the substrate is determined by the ratio between the flow rate of the second liquid flowing in each of the second pipes and the flow rate of the first liquid flowing in the first pipe. Therefore, by appropriately setting a plurality of target ratios corresponding to a plurality of portions of one side of the substrate, processing liquids with appropriate film removal capabilities are supplied to a plurality of portions of one side of the substrate.

[0177] (Item 8) In the substrate processing method of Item 6, it is also possible to...

[0178] The aforementioned second liquid supply system also includes a plurality of switching valves respectively disposed on the plurality of the plurality of second piping; The aforementioned plurality of operating conditions include establishing the switching states of the aforementioned plurality of switching valves corresponding to each of the aforementioned plurality of portions of the aforementioned surface of the aforementioned substrate. The steps of controlling the first liquid supply system and the second liquid supply system include: during the removal process, controlling the plurality of switching valves in such a way that the switching state of the plurality of switching valves corresponds to the switching state of each part of the substrate to be impacted by the processing liquid ejected from the nozzle.

[0179] The film removal capability of the processing liquid ejected from the nozzle onto the substrate depends on which of the plurality of second pipes supplies the second liquid to the first pipe. Therefore, by appropriately setting a plurality of switching states corresponding to a plurality of portions of one side of the substrate, a processing liquid with an appropriate film removal capability is supplied to a plurality of portions of one side of the substrate respectively.

[0180] (Item 9) In the substrate processing methods of items 6 to 8, it is also possible to...

[0181] The nozzles described above include a plurality of nozzles that correspond to the plurality of portions of the plurality of sides of the substrate described above; The aforementioned first liquid supply system includes a plurality of first liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned second liquid supply system comprises a plurality of second liquid supply systems corresponding to the plurality of nozzles respectively; The above substrate processing method includes: During the removal process described above, the plurality of nozzles are supported such that the outlets of the processing liquid from the plurality of nozzles are respectively facing the plurality of portions of the aforementioned side of the substrate.

[0182] In this case, by simultaneously operating multiple first liquid supply systems and multiple second liquid supply systems, processing liquid can be supplied to multiple portions of the substrate simultaneously from multiple nozzles. Therefore, compared to using a single nozzle to sequentially supply processing liquid to multiple portions of one side of the substrate, the time required for removal processing can be shortened. This prevents substrate contamination such as particle adhesion caused by prolonged processing time.

[0183] (Item 10) In the substrate processing methods of items 6 to 8, it is also possible to...

[0184] The above substrate processing method also includes the following steps: During the removal process described above, the nozzle is supported at a position above the substrate by sequentially impacting a plurality of portions of one side of the substrate with the treatment liquid ejected from the nozzle, and the nozzle and the substrate are moved relative to each other in a horizontal plane.

[0185] In this case, it is not necessary to prepare multiple nozzles to spray the processing liquid onto multiple portions of the substrate. Therefore, the number of parts in the substrate processing apparatus is reduced, and the configuration is simplified.

Claims

1. A substrate processing apparatus for performing a removal process that removes a unwanted film formed on one side of a substrate by a processing solution containing persulfate; wherein, The aforementioned persulfuric acid is generated by mixing the first solution and the second solution when one of sulfuric acid and hydrogen peroxide water is used as the first solution and the other of sulfuric acid and hydrogen peroxide water is used as the second solution. The aforementioned substrate processing apparatus includes: The nozzle sprays the above-mentioned treatment liquid in a manner that impacts a plurality of portions of the above-mentioned side of the substrate; The first liquid supply system includes a first pipe connected to the nozzle, through which the first liquid is supplied to the nozzle; The second liquid supply system includes a plurality of second pipes, each connected to a plurality of different portions of a liquid flow path formed by the nozzle and the first pipe, for supplying the second liquid to the liquid flow path through any one of the plurality of second pipes; and The control unit controls the first liquid supply system and the second liquid supply system based on a plurality of predetermined operating conditions during the removal process. The aforementioned plurality of operating conditions are established by colliding a processing liquid having a film removal capability corresponding to each of the plurality of portions of the aforementioned surface of the substrate with the portion, thereby establishing conditions corresponding to each of the plurality of portions of the aforementioned substrate.

2. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned first liquid supply system includes a first flow adjustment unit that adjusts the flow rate of the first liquid flowing in the aforementioned first piping; The aforementioned second liquid supply system includes a plurality of second flow adjustment units, each of which adjusts the flow rate of the second liquid flowing in the plurality of second piping. The aforementioned plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing in each of the plurality of portions of the aforementioned surface of the aforementioned substrate and the flow rate of the first liquid flowing in the aforementioned first pipe, corresponding to each of the plurality of portions of the aforementioned surface of the aforementioned substrate. During the removal process, the control unit controls the first flow rate adjustment unit and the plurality of second flow rate adjustment units in such a way that the ratio between the flow rate of the second liquid flowing in each second pipe and the flow rate of the first liquid flowing in the first pipe is a target ratio corresponding to that portion for each part of the substrate to be impacted by the treatment liquid ejected from the nozzle.

3. The substrate processing apparatus as claimed in claim 1, wherein, The aforementioned second liquid supply system also includes a plurality of switching valves respectively disposed on the plurality of the plurality of second piping; The aforementioned plurality of operating conditions include establishing the switching states of the aforementioned plurality of switching valves corresponding to each of the aforementioned plurality of portions of the aforementioned surface of the aforementioned substrate. During the removal process, the control unit controls the plurality of switching valves in such a way that the switching state of the plurality of switching valves corresponds to the switching state of each part of the substrate that the processing liquid ejected from the nozzle is to collide with.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein, The nozzles described above include a plurality of nozzles that correspond to the plurality of portions of the plurality of sides of the substrate described above; The aforementioned first liquid supply system includes a plurality of first liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned second liquid supply system comprises a plurality of second liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned substrate processing apparatus also includes: The nozzle support supports the plurality of nozzles such that the outlets of the processing liquid from the plurality of nozzles are respectively facing the plurality of portions of the aforementioned side of the substrate.

5. The substrate processing apparatus according to any one of claims 1 to 3, wherein, It also includes: a nozzle moving part that supports the nozzle at a position above the substrate and allows the nozzle to move relative to the substrate in a horizontal plane; During the removal process, the control unit controls the nozzle movement unit by sequentially colliding the processing liquid ejected from the nozzle with multiple portions of one side of the substrate.

6. A substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus performs a removal process by removing a unwanted film formed on one side of the substrate using a processing solution containing persulfate; wherein, The aforementioned persulfuric acid is generated by mixing the first solution and the second solution when one of sulfuric acid and hydrogen peroxide water is used as the first solution and the other of sulfuric acid and hydrogen peroxide water is used as the second solution. The aforementioned substrate processing apparatus includes: The nozzle sprays the above-mentioned treatment liquid in a manner that impacts a plurality of portions of the above-mentioned side of the substrate; A first liquid supply system includes a first pipe connected to the nozzle, through which the first liquid is supplied to the nozzle; and The second liquid supply system includes a plurality of second pipes, which are respectively connected to a plurality of different parts in the liquid flow path formed by the nozzle and the first pipe, and supply the second liquid to the first pipe through any of the plurality of second pipes. The above substrate processing method includes the following steps: For each of the plurality of portions on the aforementioned side of the aforementioned substrate, information related to the membrane removal capability of the processing liquid supplied to that portion is obtained; Based on the information obtained above, the operating conditions of the first liquid supply system and the second liquid supply system corresponding to each of the plurality of portions of the substrate are set by colliding the plurality of portions of the substrate with processing liquids having corresponding film removal capabilities; and The first liquid supply system and the second liquid supply system are controlled based on the established operating conditions of the first liquid supply system and the second liquid supply system.

7. The substrate processing method as described in claim 6, wherein, The aforementioned plurality of operating conditions include a target ratio between the flow rate of the second liquid flowing in each of the plurality of portions of the aforementioned surface of the aforementioned substrate and the flow rate of the first liquid flowing in the aforementioned first pipe, corresponding to each of the plurality of portions of the aforementioned surface of the aforementioned substrate. The steps of controlling the first liquid supply system and the second liquid supply system include: during the removal process, for each part of the substrate to be impacted by the processing liquid ejected from the nozzle, adjusting the flow rate of the first liquid flowing in the first pipe and adjusting the flow rate of the second liquid flowing in each of the second pipes respectively to establish a target ratio corresponding to that part, such that the ratio between the flow rate of the second liquid flowing in each second pipe and the flow rate of the first liquid flowing in the first pipe is equal to the target ratio corresponding to that part.

8. The substrate processing method as described in claim 6, wherein, The aforementioned second liquid supply system also includes a plurality of switching valves respectively disposed on the plurality of the plurality of second piping; The aforementioned plurality of operating conditions include establishing the switching states of the aforementioned plurality of switching valves corresponding to each of the aforementioned plurality of portions of the aforementioned surface of the aforementioned substrate. The steps of controlling the first liquid supply system and the second liquid supply system include: during the removal process, controlling the plurality of switching valves in such a way that the switching state of the plurality of switching valves corresponds to the switching state of each part of the substrate to be impacted by the processing liquid ejected from the nozzle.

9. The substrate processing method according to any one of claims 6 to 8, wherein, The nozzles described above include a plurality of nozzles that correspond to the plurality of portions of the plurality of sides of the substrate described above; The aforementioned first liquid supply system includes a plurality of first liquid supply systems corresponding to the plurality of nozzles respectively; The aforementioned second liquid supply system comprises a plurality of second liquid supply systems corresponding to the plurality of nozzles respectively; The above substrate processing method includes: During the removal process described above, the plurality of nozzles are supported such that the outlets of the processing liquid from the plurality of nozzles are respectively facing the plurality of portions of the aforementioned side of the substrate.

10. The substrate processing method according to any one of claims 6 to 8, wherein, It also includes the following steps: during the removal process, the nozzle is supported at a position above the substrate by sequentially impacting a plurality of portions of the substrate with the treatment liquid sprayed from the nozzle, and the nozzle and the substrate are moved relative to each other in a horizontal plane.

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