A silicon carbide ingot laser lift-off apparatus

Abstract

The present application relates to the field of silicon wafer laser stripping, and particularly relates to a silicon carbide ingot laser stripping device, which comprises a silicon carbide ingot stripping table, a supporting table fixedly installed at one side edge of the top of the silicon carbide ingot stripping table, a silicon wafer storage table movably sleeved on the outer side surface of the top of the supporting table, a protective cover movably sleeved on the inner side wall of the silicon carbide ingot stripping table, and a silicon carbide ingot movably sleeved on the inner side wall of the protective cover. A plurality of groups of electric telescopic push rods two are fixedly installed on the inner walls on both sides of the silicon wafer storage table. After the silicon carbide ingot is cut, the hydraulic rod is used to retract the silicon carbide ingot, and the silicon carbide ingot is moved out of the interior of the protective cover. At this time, the protective cover is rotated by the motor one, and the hydraulic rod is rotated in the reverse direction of the supporting table, the rotation angle is 90 degrees, and the hydraulic rod and the top surface of the silicon carbide ingot stripping table are in a mutual horizontal angle.

Description

Technical Field

[0001] This invention belongs to the field of silicon crystal laser lift-off technology, specifically a silicon carbide ingot laser lift-off device. Background Technology

[0002] Silicon carbide ingots suffer from problems such as low cutting efficiency, high material loss, and easy cracking and warping on the wafer surface during the slicing process due to the high hardness and brittleness of the material.

[0003] The device mainly includes a laser emission system, a motion control system, a vision positioning system, a cooling system, and a vacuum adsorption platform. The laser emission system typically uses a short-pulse laser, whose wavelength can penetrate silicon carbide material and form a high energy density in the focusing area, inducing the formation of a local separation layer inside the ingot. The motion control system uses a high-precision linear motor or a multi-axis robotic arm to achieve precise movement of the laser focus in three-dimensional space. The vision positioning system combines a CCD camera with image processing algorithms to identify the crystal orientation and cutting path of the ingot. The cooling system controls the temperature of the laser-affected area through airflow or liquid cooling to avoid thermal stress damage. The vacuum adsorption platform is used to fix the ingot and prevent displacement or vibration during processing.

[0004] A patent with publication number CN115555736B discloses a method and apparatus for laser stripping of silicon carbide ingots. The method first focuses an ultrashort pulse laser beam through the first end face of the silicon carbide ingot onto a predetermined depth layer. Above this depth layer, void modification and crack modification regions are generated, and these layers are scanned to form void and crack modification layers. Next, a short pulse laser beam is focused through the second end face of the silicon carbide ingot onto the void modification region. The laser beam scatters and propagates within this region, causing heat to be released and cracks to grow laterally outwards within the crack modification region. The scanning process connects adjacent void modification regions within the void modification layer through this lateral growth. This reduces the amount and length of cracks extending longitudinally along the silicon carbide ingot within the modification layer, increases the number and length of lateral cracks, reduces cutting loss thickness, and minimizes waste.

[0005] Currently, existing silicon carbide wafers possess extremely high hardness but are also highly brittle. This necessitates the storage and handling of 350µm thick silicon carbide wafers after laser stripping. Since laser cutting of a silicon carbide wafer takes only 15-20 minutes, a separate device is required to store the cut wafers. However, whether placed manually or mechanically, the edges of the silicon carbide wafer are easily subjected to external pressure, leading to stress changes and cracks. This, in turn, increases the number of defective silicon carbide wafers.

[0006] Therefore, the present invention provides a laser stripping device for silicon carbide ingots. Summary of the Invention

[0007] In order to overcome the shortcomings of the prior art, at least one technical problem raised in the background art is solved.

[0008] The technical solution adopted by this invention to solve its technical problem is as follows: A silicon carbide ingot laser stripping device according to this invention includes a silicon carbide ingot stripping stage and a support platform fixedly installed on one side edge of the top of the silicon carbide ingot stripping stage; a silicon carbide wafer receiving platform movably sleeved on the outer surface of the top of the support platform; a protective cover movably sleeved on the inner wall of the silicon carbide ingot stripping stage; and a silicon carbide ingot movably sleeved on the inner wall of the protective cover. Multiple sets of electrically operated telescopic push rods are fixedly installed on the inner walls of both sides of the silicon carbide wafer receiving platform, and the output ends of the electrically operated telescopic push rods are fixedly connected to... The device includes an arc-shaped extrusion limiting strip, a photoelectric sensor inside the silicon carbide wafer receiving platform, trapezoidal hollow anti-slip blocks on the inner walls of both sides of the arc-shaped extrusion limiting strip, an anti-slip layer on the outer surface of the trapezoidal hollow anti-slip blocks that adheres to the outer surface of the silicon carbide ingot, a hollow buffer pad that is movably attached to the outer surface of the silicon carbide ingot fixedly installed on the bottom inner wall of the arc-shaped extrusion limiting strip, an anti-slip groove on the top outer surface of the hollow buffer pad, a protective sleeve on the top surface of the silicon carbide ingot, and a hydraulic rod inside the protective sleeve.

[0009] Preferably, the top surface of the silicon carbide ingot stripping stage is provided with two sets of limiting rails at the two side edges. The limiting rails are respectively movably fitted with a support frame and a slider. The top surface of the slider is fixedly installed with a motor.

[0010] Preferably, the output end of the motor is fixedly connected to the center position of the outer surface of the protective housing, and the other side surface of the protective housing is movably sleeved on the outer surface of the support frame.

[0011] Preferably, a fixing plate is fixedly connected to the metal piston rod surface of the hydraulic rod, a suction cup is fixedly connected to the bottom surface of the fixing plate, and two sets of adsorption components are fixedly installed on the top surface of the fixing plate and at the two side edges.

[0012] Preferably, the output end of the adsorption component extends to the inner wall of the suction cup, and the bottom surface of the suction cup is movably attached to the top surface of the silicon carbide ingot.

[0013] Preferably, the inner walls of both sides of the protective cover are symmetrically and fixedly connected to the second limiting track, the bottom inner wall of the second limiting track is fixedly installed with the second motor, and the output end of the second motor is fixedly connected to the threaded rod.

[0014] Preferably, the outer surface of the threaded rod is threadedly fitted with a slider two disposed on the outer surface of the limiting track two, and a short pulse laser is fixedly installed on the outer surface of the slider two, and a concentrator is disposed on the outer surface of the output end of the short pulse laser.

[0015] Preferably, two sets of support limiting strips are fixedly connected to the outer surface of the second slider, and a vision sensor and an ultrasonic generator are respectively fixedly installed on the outer surface of the two sets of support limiting strips. A push toothed strip is provided on the outer surface of the protective cover at the bottom edge.

[0016] Preferably, a transmission mechanism is fixedly installed on the bottom inner wall of the silicon carbide ingot stripping stage, and the outer surface of the output end of the transmission mechanism is engaged with the outer surface of the push rack.

[0017] Preferably, an electric telescopic push rod is fixedly installed on the bottom inner wall of the silicon carbide wafer storage platform, and an arc-shaped fitting limiting strip is fixedly connected to the output end of the electric telescopic push rod. The inner wall of the arc-shaped fitting limiting strip is movably sleeved on the bottom outer surface of the silicon carbide ingot.

[0018] The beneficial effects of this invention are as follows: 1. The silicon carbide ingot laser stripping device of the present invention, after the silicon carbide ingot is cut off, a hydraulic rod retracts the silicon carbide ingot, causing it to move out from inside the protective cover. At this time, a motor rotates a pair of protective sleeves, thereby driving the hydraulic rod to rotate in the opposite direction of the support platform by 90°, so that the hydraulic rod and the top surface of the silicon carbide ingot stripping platform are at a horizontal angle to each other. At this time, the hydraulic rod extends the silicon carbide ingot, extending it into the silicon carbide crystal... Inside the wafer storage platform, photoelectric sensors emit and receive light beams to detect the presence or arrival of silicon carbide ingots at specific positions. When the silicon carbide ingot moves to the middle position between the two sets of electric telescopic push rods, the photoelectric sensor transmits a DI signal to the hydraulic rod, causing the hydraulic rod to stop moving. At this time, the electric telescopic push rod pushes the arc-shaped extrusion limiting strip, causing the arc-shaped extrusion limiting strip to engage with the outer surface of the silicon carbide ingot. The arc-shaped extrusion limiting strip is used to engage and limit the two sides of the silicon carbide ingot. 2. The silicon carbide ingot laser stripping device of the present invention, when the arc-shaped extrusion limiting strip is attached to both sides of the silicon carbide wafer, as the arc-shaped extrusion limiting strip adheres to the outer surface of the silicon carbide wafer, the expansion property of the trapezoidal hollow anti-slip block is used to elastically extrude the silicon carbide wafer onto the outer surface of the silicon carbide wafer. The elasticity of the trapezoidal hollow anti-slip block and the friction layer on the surface are used to extrude and adhere the silicon carbide wafer, increasing the friction between the silicon carbide wafer and the wafer, thus confining the silicon carbide wafer inside the arc-shaped extrusion limiting strip. As the silicon carbide wafer continues to penetrate deeper, the anti-slip groove inside the hollow buffer pad further limits the position of the silicon carbide wafer. 3. The silicon carbide ingot laser stripping device of the present invention, the hollow buffer pad inside the hollow buffer pad can effectively increase the shock absorption force of the silicon carbide wafer, greatly reducing the stress change at the edge of the silicon carbide wafer due to subsequent movement, which may cause the silicon carbide wafer to break. After multiple silicon carbide wafers are sequentially clamped into the arc-shaped extrusion limiting strip, the pair of arc-shaped fitting limiting strips are lifted with the electric telescopic push rod, so that the arc-shaped fitting limiting strips are sleeved and limited at the bottom edge of the silicon carbide wafer, thereby supporting and limiting the bottom of the silicon carbide wafer, so that when the silicon carbide wafer storage platform is moved later, there will be no excessive shaking. 4. The silicon carbide ingot laser stripping device of the present invention places the silicon carbide ingot inside a protective cover, and fixes the position of the silicon carbide ingot by means of a hollow adsorption device platform installed on the outer surface of the silicon carbide ingot stripping stage inside the protective cover. At this time, the hydraulic rod extends the suction cup and makes the suction cup adhere to the top surface of the silicon carbide ingot. The air inside the suction cup is absorbed by the adsorption component, so that a low-pressure hollow environment is formed inside the suction cup. At this time, the visual sensor on the outer surface of the support limit bar scans the surface of the silicon carbide ingot to determine the internal structure of the silicon carbide ingot and thus determine the cutting surface and cutting path. Subsequently, a short pulse laser forms a continuous or intermittent modified layer by point-by-point or linear scanning to cut the cutting path inside the silicon carbide ingot. Attached Figure Description

[0019] The invention will now be further described with reference to the accompanying drawings.

[0020] Figure 1 This is a perspective view of the present invention; Figure 2 It is in this invention Figure 1 Enlarged 3D view of a specific area; Figure 3 This is a perspective cross-sectional view of the silicon carbide ingot stripping stage and support frame in this invention. Figure 4 This is a cross-sectional perspective view of the silicon carbide ingot peeling stage in this invention; Figure 5 This is a partial cross-sectional perspective view of the protective cover in this invention; Figure 6 This is a perspective view of the silicon carbide wafer storage platform in this invention; Figure 7 This is a three-dimensional view of the arc-shaped fitting and limiting strip in this invention; Figure 8 This is a three-dimensional cross-sectional view of the arc-shaped extrusion limiting strip in this invention.

[0021] In the diagram: 11. Silicon carbide ingot stripping stage; 112. Limiting track bar one; 113. Slider one; 114. Motor one; 12. Support frame; 121. Protective sleeve; 122. Hydraulic rod; 123. Fixing plate; 124. Suction cup; 125. Adsorption assembly; 13. Support platform; 14. Silicon carbide wafer storage platform; 141. Electric telescopic push rod one; 142. Arc-shaped fitting limiting strip; 143. Electric telescopic push rod two; 144. Arc-shaped extrusion limiting strip. 145. Trapezoidal hollow anti-slip block; 146. Hollow buffer pad; 147. Anti-slip groove; 15. Protective cover; 151. Limiting track bar II; 152. Motor II; 153. Threaded rod; 154. Slider II; 155. Supporting limiting bar; 156. Short pulse laser; 157. Concentrator; 158. Ultrasonic generator; 159. Vision sensor; 1510. Transmission mechanism; 1511. Pushing rack and pinion; 16. Silicon carbide ingot. Detailed Implementation

[0022] To make the technical means, creative features, objectives and effects of this invention easier to understand, the invention will be further described below in conjunction with specific embodiments.

[0023] like Figures 1 to 4 and Figure 6 - Figure 8As shown, an embodiment of the present invention provides a silicon carbide ingot laser stripping device, including a silicon carbide ingot stripping stage 11 and a support platform 13 fixedly installed on one side edge of the top of the silicon carbide ingot stripping stage 11, a silicon carbide wafer receiving platform 14 movably sleeved on the outer surface of the top of the support platform 13, a protective cover 15 movably sleeved on the inner wall of the silicon carbide ingot stripping stage 11, a silicon carbide ingot 16 movably sleeved on the inner wall of the protective cover 15, and multiple sets of electric telescopic push rods 143 fixedly installed on the inner walls of both sides of the silicon carbide wafer receiving platform 14. An arc-shaped extrusion limiting strip 144 is fixedly connected to the output end of the electric telescopic push rods 143. The internal part of the 4-shaped guide bar is equipped with a photoelectric sensor. Trapezoidal hollow anti-slip blocks 145 are provided on the inner walls of both sides of the arc-shaped extrusion limiting strip 144. The trapezoidal hollow anti-slip blocks 145 are shaped with a smaller top and a larger bottom. When the trapezoidal hollow anti-slip blocks 145 are attached to the silicon carbide wafer, the larger lower protrusion will preferentially adhere to the surface of the silicon carbide wafer, placing the silicon carbide wafer in the middle of the two trapezoidal hollow anti-slip blocks 145. This limits the position of the silicon carbide wafer. Furthermore, the thicker the silicon carbide wafer, the greater the extrusion force on the trapezoidal hollow anti-slip blocks 145. The deformed trapezoidal hollow anti-slip blocks 145 increase the contact area and range with the silicon carbide wafer, providing improved stability. The larger the size, the more structural stability and wedge-shaped interlocking force are provided to prevent lateral slippage. The outer surface of the trapezoidal hollow anti-slip block 145 is provided with an anti-slip layer that adheres to the outer surface of the silicon carbide ingot 16. The bottom inner wall of the arc-shaped extrusion limiting strip 144 is fixedly installed with a hollow buffer pad 146 that is movably attached to the outer surface of the silicon carbide ingot 16. The bottom end of the hollow buffer pad 146 is hollow. The hollow structure can absorb and dissipate energy more effectively, especially in filtering high-frequency, small-amplitude vibrations. The effect is nearly 40% better than that of a solid pad, which is particularly outstanding. When subjected to a large impact, the hollow structure can effectively reduce the peak impact force through deformation and protect the buffered object. Meanwhile, the hollow buffer pad 146 can fix the object while the hollow interlayer inside effectively reduces the contact between the object and harder external materials. The top outer surface of the hollow buffer pad 146 is provided with an anti-slip groove 147. The top surface of the silicon carbide crystal ingot 16 is provided with a protective sleeve 121. The inside of the protective sleeve 121 is provided with a hydraulic rod 122. The bottom inner wall of the silicon carbide wafer storage platform 14 is fixedly installed with an electric telescopic push rod 141. The output end of the electric telescopic push rod 141 is fixedly connected with an arc-shaped fitting limit strip 142. The inner wall of the arc-shaped fitting limit strip 142 is movably sleeved on the bottom outer surface of the silicon carbide crystal ingot 16.

[0024] Silicon carbide wafers are cut from the surface of silicon carbide ingot 16, transferred and collected, and retracted by hydraulic rod 122, causing the wafers to move out of the protective cover 15. At this time, motor 114 rotates the protective casing 121, which in turn rotates the hydraulic rod 122 in the opposite direction to the support platform 13 by 90°, so that the hydraulic rod 122 and the top surface of the silicon carbide ingot stripping stage 11 are at a horizontal angle. The hydraulic rod 122 then extends the silicon carbide wafer into the silicon carbide wafer receiving platform 14. A photoelectric sensor emits and receives light beams to detect the presence or arrival at a specific position of the silicon carbide wafer. The core of its working principle lies in the photoelectric effect, which uses changes in light signals to trigger changes in electrical signals. The photoelectric sensor emits a light beam and detects whether the light is blocked or reflected by an object. The photoelectric effect converts changes in light intensity into electrical signals, thereby achieving non-contact detection of objects. When the silicon carbide wafer moves to the middle position of the two sets of electric telescopic push rods 143, the photoelectric sensor transmits a DI signal to the hydraulic rod 122, causing the hydraulic rod 122 to stop moving. At this time, the electric telescopic push rod 143 pushes the arc-shaped extrusion limit strip 144, causing the arc-shaped extrusion limit strip 144 to engage with the outer surface of the silicon carbide wafer. The arc-shaped extrusion limit strip 144 engages and limits the two sides of the silicon carbide wafer. When the arc-shaped extrusion limiting strip 144 is attached to both sides of the silicon carbide wafer, as the arc-shaped extrusion limiting strip 144 adheres to the outer surface of the silicon carbide wafer, the expansion property of the trapezoidal hollow anti-slip block 145 is used to elastically press against the outer surface of the silicon carbide wafer. The elasticity of the trapezoidal hollow anti-slip block 145 and the friction layer on the surface are used to press and adhere the silicon carbide wafer, increasing the friction between the silicon carbide wafer and confining the silicon carbide wafer inside the arc-shaped extrusion limiting strip 144. As the silicon carbide wafer continues to penetrate deeper, the anti-slip groove 147 inside the hollow buffer pad 146 further limits the position of the silicon carbide wafer. Meanwhile, the hollow buffer pad 146 inside can effectively increase the shock absorption force of the silicon carbide wafer, greatly reducing the possibility of stress changes at the edge of the silicon carbide wafer due to subsequent movement, which could cause the silicon carbide wafer to break. After multiple silicon carbide wafers are sequentially inserted into the arc-shaped extrusion limiting strip 144, the arc-shaped fitting limiting strip 142 is lifted by the electric telescopic push rod 141, so that the arc-shaped fitting limiting strip 142 is fitted and limited at the bottom edge of the silicon carbide wafer, thereby supporting and limiting the bottom of the silicon carbide wafer, so that when the silicon carbide wafer storage platform 14 is moved later, there will be no excessive shaking.

[0025] like Figure 5As shown, a fixed plate 123 is fixedly connected to the metal piston rod surface of the hydraulic rod 122. A suction cup 124 is fixedly connected to the bottom surface of the fixed plate 123. Two sets of adsorption components 125 are fixedly installed on the top surface of the fixed plate 123 and at the two side edges. The output end of the adsorption component 125 extends to the inner wall of the suction cup 124. The bottom surface of the suction cup 124 is movably attached to the top surface of the silicon carbide ingot 16. Limiting rails 151 are symmetrically fixedly connected to the inner walls of the two sides of the protective cover 15. A motor 152 is fixedly installed on the bottom inner wall of the limiting rail 151. A threaded rod 153 is fixedly connected to the output end of the motor 152. A slider 154 is movably sleeved on the outer surface of the threaded rod 153 and is provided on the outer surface of the limiting rail 151. A short pulse laser 156 is fixedly installed on the outer surface of the slider 154. A concentrator 157 is provided on the outer surface of the output end of the short pulse laser 156.

[0026] The silicon carbide ingot 16 is placed inside the protective cover 15, and its position is fixed by the hollow adsorption device platform inside the protective cover 15 and installed on the outer surface of the silicon carbide ingot stripping stage 11. At this time, the hydraulic rod 122 extends the suction cup 124 and makes the suction cup 124 adhere to the top surface of the silicon carbide ingot 16. The adsorption component 125 absorbs the air inside the suction cup 124, so that a low-pressure hollow environment is formed inside the suction cup 124. At this time, the vision sensor 159 on the outer surface of the support limit strip 155 scans the surface of the silicon carbide ingot 16 to determine the internal structure of the silicon carbide ingot 16 and thus determine the cutting surface and cutting path. Later, the short pulse laser 156 forms a continuous or intermittent modified layer by scanning point by point or linearly, and cuts the cutting path inside the silicon carbide ingot 16. The screw rod 153 is rotated by the motor 152, which in turn drives the slider 154 to move up and down inside the protective cover 15, thereby performing laser cutting on different positions of the silicon carbide ingot 16.

[0027] like Figure 5 As shown, two sets of support limiting strips 155 are fixedly connected to the outer surface of the slider 154. A vision sensor 159 and an ultrasonic generator 158 are respectively fixedly installed on the outer surface of the two sets of support limiting strips 155. A pusher rack 1511 is provided on the outer surface of the protective cover 15 at the bottom edge. A transmission mechanism 1510 is fixedly installed on the bottom inner wall of the silicon carbide ingot stripping stage 11. The outer surface of the output end of the transmission mechanism 1510 is engaged with the outer surface of the pusher rack 1511.

[0028] When the short-pulse laser 156 cuts the silicon carbide ingot 16, it works in conjunction with the ultrasonic generator 158 to generate a powerful ultrasonic field. The ultrasonic field is used to uniformly transfer energy to the surface of the silicon carbide ingot 16, so that the ultrasonic energy is uniformly wrapped around the entire surface of the silicon carbide ingot 16. This uniformly transfers stress to the modified layer inside the silicon carbide ingot 16, so that the silicon carbide ingot 16 can effectively cut off the silicon carbide wafer, achieving the effect of wafer separation. While the short-pulse laser 156 is cutting the silicon carbide ingot 16, the concentrator 157 collects and concentrates the dispersed energy into a very small area to obtain extremely high energy density. This reduces the energy loss caused by laser scattering when the short-pulse laser 156 emits laser light, thus reducing energy waste. Furthermore, while the short-pulse laser 156 is performing laser stripping, the transmission mechanism 1510 pushes the push rack 1511 on the outer surface of the protective cover 15, causing the protective cover 15 to rotate rapidly. This allows the protective cover 15 to rotate around the silicon carbide ingot 16 while gradually cutting deeper into different positions of the silicon carbide ingot 16.

[0029] like Figures 1 to 2 As shown, two sets of limiting rails 112 are provided on the top surface of the silicon carbide ingot stripping stage 11 and at the two side edges. A support frame 12 and a slider 113 are movably sleeved inside the limiting rails 112. A motor 114 is fixedly installed on the top surface of the slider 113. The output end of the motor 114 is fixedly connected to the center of the outer surface of the protective shell 121. The other side surface of the protective shell 121 is movably sleeved on the outer surface of the support frame 12.

[0030] After the silicon carbide ingot 16 is cut, it moves inside the limiting track 112 with the slider 113. The slider 113 moves along with the support frame 12 and the protective shell 121, thereby moving the protective shell 121 away from the top surface of the protective cover 15 and adding a new silicon carbide ingot 16 inside the protective cover 15. The position of the silicon carbide ingot 16 is then fixed and locked using a vacuum suction cup.

[0031] Working principle: A silicon carbide ingot 16 is placed on a vacuum adsorption platform. A vision sensor 159 scans the surface and internal structure of the ingot 16 to determine the cutting plane and the scanning path of a short-pulse laser 156. The laser beam of the short-pulse laser 156 is focused at a predetermined depth within the ingot 16, forming continuous or intermittent modified layers through point-by-point or linear scanning. These layers contain multiphoton absorption-induced lattice amorphization or microcracks. After the short-pulse laser 156 completes its scan, an ultrasonic generator 158 is activated to generate a powerful ultrasonic field, which is used to uniformly transfer energy to the ingot. On the surface of silicon carbide ingot 16, an ultrasonic field can uniformly wrap ultrasonic energy around the entire surface of silicon carbide ingot 16, thereby uniformly "injecting" stress into the modified layer inside silicon carbide ingot 16, achieving the effect of separating wafers. Ultrasonic energy can make the stress distribution extremely uniform, which can better protect the ingot and has good process controllability. It can be applied to the separation of wafers of any complex shape. The material at the modified layer is separated by microwaves generated by ultrasonic generator 158 to obtain independent wafers. The separated wafers are then polished and cleaned to remove residual modified layer impurities.

[0032] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the present invention as claimed. The scope of protection of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide ingot laser stripping device, comprising a silicon carbide ingot stripping stage (11) and a support stage (13) fixedly installed at one edge of the top of the silicon carbide ingot stripping stage (11), a silicon carbide wafer receiving stage (14) movably sleeved on the outer surface of the top of the support stage (13), a protective cover (15) movably sleeved on the inner wall of the silicon carbide ingot stripping stage (11), and a silicon carbide ingot (16) movably sleeved on the inner wall of the protective cover (15), characterized in that: Multiple sets of electric telescopic push rods (143) are fixedly installed on the inner walls of both sides of the silicon carbide wafer receiving platform (14). An arc-shaped extrusion limiting strip (144) is fixedly connected to the output end of the electric telescopic push rod (143). A photoelectric sensor is installed inside the silicon carbide wafer receiving platform (14). Trapezoidal hollow anti-slip blocks (145) are installed on the inner walls of both sides of the arc-shaped extrusion limiting strip (144). The outer surface of the trapezoidal hollow anti-slip block (145) is provided with a fitting surface. On the outer surface of the silicon carbide ingot (16), there is an anti-slip layer. The bottom inner wall of the arc-shaped extrusion limiting strip (144) is fixedly installed with a hollow buffer pad (146) that is movably attached to the outer surface of the silicon carbide ingot (16). The top outer surface of the hollow buffer pad (146) is provided with an anti-slip groove (147). The top surface of the silicon carbide ingot (16) is provided with a protective sleeve (121). The inside of the protective sleeve (121) is provided with a hydraulic rod (122).

2. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: Two sets of limiting rails (112) are provided on the top surface of the silicon carbide ingot stripping stage (11) and at the two side edges. A support frame (12) and a slider (113) are respectively movably sleeved inside the limiting rails (112). A motor (114) is fixedly installed on the top surface of the slider (113).

3. The silicon carbide ingot laser lift-off device according to claim 2, characterized in that: The output end of the motor (114) is fixedly connected to the center of the outer surface of the protective housing (121), and the other side of the protective housing (121) is movably sleeved on the outer surface of the support frame (12).

4. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: A fixing plate (123) is fixedly connected to the metal piston rod surface of the hydraulic rod (122). A suction cup (124) is fixedly connected to the bottom surface of the fixing plate (123). Two sets of adsorption components (125) are fixedly installed on the top surface of the fixing plate (123) and at the two side edges.

5. The silicon carbide ingot laser lift-off device according to claim 4, characterized in that: The output end of the adsorption component (125) extends to the inner wall of the suction cup (124), and the bottom surface of the suction cup (124) is movably attached to the top surface of the silicon carbide ingot (16).

6. The laser lift-off device for silicon carbide ingots according to claim 1, characterized in that: The inner walls of both sides of the protective cover (15) are symmetrically and fixedly connected to the second limiting track bar (151). The inner wall of the bottom of the second limiting track bar (151) is fixedly installed with the second motor (152). The output end of the second motor (152) is fixedly connected to the threaded rod (153).

7. The silicon carbide ingot laser lift-off device according to claim 6, characterized in that: The outer surface of the threaded rod (153) is threadedly fitted with a slider two (154) disposed on the outer surface of the limiting track bar two (151). A short pulse laser (156) is fixedly installed on the outer surface of the slider two (154), and a concentrator (157) is disposed on the outer surface of the output end of the short pulse laser (156).

8. The silicon carbide ingot laser lift-off device according to claim 7, characterized in that: Two sets of support limiting strips (155) are fixedly connected to the outer surface of the second slider (154). A vision sensor (159) and an ultrasonic generator (158) are respectively fixedly installed on the outer surface of the two sets of support limiting strips (155). A push toothed strip (1511) is provided on the outer surface of the protective cover (15) at the bottom edge.

9. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: A transmission mechanism (1510) is fixedly installed on the bottom inner wall of the silicon carbide ingot stripping stage (11), and the outer surface of the output end of the transmission mechanism (1510) is engaged with the outer surface of the push rack (1511).

10. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: An electric telescopic push rod (141) is fixedly installed on the inner wall of the bottom of the silicon carbide wafer storage platform (14). An arc-shaped fitting limit strip (142) is fixedly connected to the output end of the electric telescopic push rod (141). The inner wall of the arc-shaped fitting limit strip (142) is movably sleeved on the outer surface of the bottom of the silicon carbide ingot (16).

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