Semiconductor process chamber, method of controlling the same, and semiconductor process apparatus

Abstract

Embodiments of the present application provide a semiconductor process chamber, a control method thereof and a semiconductor process equipment to solve the problem that a wafer is easily scratched with a susceptor due to bending downward under the action of gravity; wherein the semiconductor process chamber comprises a susceptor, a distance sensor, a support ring and a lifting driving device; the support ring is connected with the susceptor through the lifting driving device, and the support ring is used for carrying a wafer, wherein the wafer carried on the support ring is located above the susceptor; the distance sensor is connected with the susceptor, and the distance sensor is used for detecting the distance of the wafer relative to the susceptor; and the lifting driving device is used for driving the wafer to rise and fall with the support ring, so as to adjust the wafer to a target distance spaced apart from the susceptor.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor process, in particular to a semiconductor process chamber, a control method thereof and a semiconductor process equipment. BACKGROUND

[0002] The semiconductor process chamber comprises a susceptor and a support ring, the support ring is used for carrying a wafer, the susceptor is located below the wafer, and the susceptor can cool the wafer. In the process of implementing the semiconductor process on the wafer by the semiconductor process chamber, the center of the wafer will be deformed by bending downward under the action of gravity. It can be understood that the higher the temperature of the wafer is, the greater the deformation of the wafer will be. In the case that the deformation of the wafer is too large, the wafer will be in contact with the susceptor, thereby easily causing the part of the wafer in contact with the susceptor to be damaged. SUMMARY

[0003] The embodiments of the present application provide a semiconductor process chamber, a control method thereof and a semiconductor process equipment to solve the problem of how to improve the wafer bending downward under the action of gravity and easily scratching the susceptor.

[0004] In order to solve the above technical problems, the present application is implemented as follows: In a first aspect, the embodiments of the present application provide a semiconductor process chamber.

[0005] The semiconductor process chamber provided by the embodiments of the present application comprises a susceptor, a distance sensor, a support ring and a lifting driving device; the support ring is connected with the susceptor through the lifting driving device, and the support ring is used for carrying a wafer, wherein the wafer carried by the support ring is located above the susceptor; the distance sensor is connected with the susceptor, and the distance sensor is used for detecting the distance between the wafer and the susceptor; and the lifting driving device is used for driving the wafer to rise and fall with the support ring, so as to adjust the wafer to a target distance spaced apart from the susceptor.

[0006] Optionally, in the case that the semiconductor process chamber is in an initial process stage, the distance between the wafer and the susceptor is a process distance d; and the target distance is 1 / 2d to 3 / 4d.

[0007] Optionally, a detection part of the distance sensor is directed to the ring core of the support ring in a vertical direction.

[0008] Optionally, the top surface of the distance sensor is lower than the top surface of the susceptor, or the top surface of the distance sensor is flush with the top surface of the susceptor.

[0009] Optionally, the lifting drive device includes at least three linear actuators, each of which is connected to the base and the support ring, and the linear actuators are spaced apart along the circumferential direction of the support ring.

[0010] Optionally, the linear actuator includes a rotary motor and a ball screw drive mechanism; or, the linear actuator is a linear motor.

[0011] Optionally, the linear actuator is a cylinder, the cylinder includes a piston rod, the lifting drive device further includes a first connecting member, the piston rod of each cylinder is connected to the first connecting member, and the first connecting member is connected to the support ring.

[0012] Optionally, the cylinder further includes a cylinder body, a piston, a first sealing ring, a second sealing ring, a cover, and a third sealing ring. The cylinder body has a receiving cavity, the piston is slidably disposed in the receiving cavity, the piston rod is connected to the piston, the bottom of the receiving cavity is open, and the base has a gas passage communicating with the bottom of the receiving cavity. The first sealing ring is sandwiched between the cylinder body and the base. The second sealing ring is sleeved on the piston and sandwiched between the piston and the cavity wall of the receiving cavity. The cover seals the end of the cylinder body away from the base, the cover has a through hole, the piston rod passes through the through hole, and the third sealing ring is sandwiched between the hole wall of the through hole and the piston rod.

[0013] Secondly, embodiments of this application provide a method for controlling a semiconductor process chamber.

[0014] The control method for a semiconductor process chamber provided in this application embodiment can be applied to any semiconductor process chamber provided in this application embodiment. The control method includes: using the distance sensor to detect the measured distance of the wafer supported on the support ring relative to the base; and based on the measured distance, controlling the lifting drive device to drive the wafer to rise and fall with the support ring, so as to adjust the wafer to a target distance relative to the base.

[0015] Optionally, when the semiconductor process chamber is in the initial stage of the process, the distance between the wafer and the base is a process distance d; the step of controlling the lifting drive device to drive the wafer to rise and fall with the support ring based on the measured distance to adjust the wafer to a target distance relative to the base includes: when the measured distance is less than 1 / 4d, controlling the lifting drive device to drive the wafer to rise with the support ring to adjust the wafer to a target distance relative to the base, wherein the target distance is 1 / 2d to 3 / 4d.

[0016] Thirdly, embodiments of this application provide a semiconductor process apparatus.

[0017] The semiconductor process equipment provided in this application includes: a wafer transport device and any one of the semiconductor process chambers provided in this application.

[0018] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects: In the embodiments of this application, a distance sensor can be used to detect the distance between the wafer and the substrate. Then, based on this distance, a lifting drive device can be used to drive the wafer to move up and down with the support ring, ensuring that the wafer is spaced at a target distance from the substrate. By reasonably setting the target distance, the spacing between the wafer and the substrate can be guaranteed to meet process requirements without the wafer rubbing against the substrate.

[0019] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A schematic diagram of a semiconductor process chamber provided for an embodiment of this application; Figure 2 This is a schematic diagram of a base, wafer, distance sensor, support ring and lifting drive device provided in an embodiment of this application, showing the wafer and base separated by a first distance; Figure 3 This is a schematic diagram of a base, wafer, distance sensor, support ring and lifting drive device provided for an embodiment of this application, showing the case where the wafer and the base are spaced apart by a second distance; Figure 4 A schematic diagram of a lifting drive device provided in an embodiment of this application; Figure 5 A schematic diagram of a linear actuator provided in an embodiment of this application; Figure 6 A top view of a base and a lifting drive device provided in an embodiment of this application; Figure 7 A schematic diagram of another lifting drive device provided in the embodiments of this application; Figure 8 A schematic diagram of another base, wafer, distance sensor, support ring and lifting drive device provided for an embodiment of this application shows the case where the wafer is spaced a third distance from the base; Figure 9 A schematic diagram of another base, wafer, distance sensor, support ring and lifting drive device provided for an embodiment of this application shows the case where the wafer is spaced a fourth distance from the base; Figure 10 A flowchart illustrating a control method for a semiconductor process chamber provided in this application embodiment; Figure 11 This is a schematic diagram of a semiconductor process equipment provided in an embodiment of this application.

[0022] Explanation of reference numerals in the attached figures: 1- Semiconductor process equipment; 100 - Semiconductor process chamber; 110 - Base; 111 - Gas passage; 120 - Distance sensor; 130 - Support ring; 140 - Lifting drive device; 141 - Linear actuator; 1411 - Piston rod; 1412 - Cylinder body; 1413 - Piston; 1414 - First sealing ring; 1415 - Receiving cavity; 1416 - Second sealing ring; 1417 - Cover; 1418 - Third sealing ring; 142 - First connecting member; 143 - Second connecting member; 150-chamber body; 160 - Lining; 170-Cap ring; 180 - Supporting structure; 190 - Support mechanism drive device; 200-Wafer; 300-Wafer Transfer Device; 400 - Loading port; 500 - Device front-end module; 600 - Loading lock; 700 - De-air chamber. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0025] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application specification may have been selected by the applicant at his or her own discretion, and their detailed meanings are explained in the relevant sections of this description.

[0026] Furthermore, this application should be understood not only through the actual terms used, but also through the meaning implied by each term.

[0027] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0028] This application provides a semiconductor process chamber. (See reference...) Figures 1 to 9 The semiconductor process chamber 100 provided in this application embodiment includes: a base 110, a distance sensor 120, a support ring 130, and a lifting drive device 140.

[0029] For example, the semiconductor process chamber 100 is a back-side metallization process chamber. The back-side metallization process chamber is used to perform back-side metallization on the wafer. For example, after performing semiconductor processes on the front side of the wafer and forming circuitry on the front side, the wafer can be transferred to the back-side metallization process chamber, whereby electrical connection pins can be formed on the back side of the wafer using the back-side metallization process chamber.

[0030] The support ring 130 is connected to the base 110 via a lifting drive device 140. The support ring 130 is used to support the wafer 200, wherein the wafer 200 supported on the support ring 130 is located above the base 110. The distance sensor 120 is connected to the base 110 and is used to detect the distance of the wafer 200 relative to the base 110. The lifting drive device 140 is used to drive the wafer 200 to rise and fall with the support ring 130, so as to adjust the wafer 200 to a target distance relative to the base 110.

[0031] In this manner, in the embodiments of this application, the distance sensor 120 can be used to detect the distance between the wafer 200 and the base 110. Then, based on this distance, the lifting drive device 140 can be used to drive the wafer 200 to rise and fall with the support ring 130, so that the wafer 200 is spaced at a target distance from the base 110. Thus, by reasonably setting the target distance, the spacing between the wafer 200 and the base 110 is ensured to meet process requirements without the wafer 200 scraping against the base 110.

[0032] In some embodiments, when the semiconductor process chamber is in the initial stage of the process, the distance between the wafer 200 and the substrate 110 is the process distance d. Correspondingly, the target distance is 1 / 2d to 3 / 4d. For example, the target distance is 1 / 2d; or the target distance is 3 / 5d; or the target distance is 3 / 4d.

[0033] In some embodiments, the detection section of the distance sensor 120 is vertically oriented towards the center of the support ring 130. Thus, when the wafer 200 is supported on the support ring 130, the distance sensor 120 can detect the distance between the center of the bottom surface of the wafer 200 and the base 110. It should be noted that, generally, the deformation at the center of the bottom surface of the wafer 200 is the greatest, and the distance between the center of the bottom surface of the wafer 200 and the base 110 is the smallest. Therefore, based on the distance between the center of the bottom surface of the wafer 200 and the base 110, the lifting drive device 140 can be controlled to drive the wafer 200 to rise and fall with the support ring 130, so that the distance between the wafer 200 and the base 110 meets process requirements while preventing the wafer 200 from rubbing against the base 110.

[0034] For example, refer to Figure 2 and Figure 3 Based on the detection results of the distance sensor 120, the measured distance d1 between the center of the bottom surface of the wafer 200 and the base 110 is determined. If d1 is less than a preset threshold, the lifting drive device 140 can be controlled to drive the wafer 200 to rise with the support ring 130, so that the distance d2 between the center of the bottom surface of the wafer 200 and the base 110 is d2. It should be noted that due to different semiconductor process equipment, different wafer sizes, or different process parameters, there are different requirements for the distance between the wafer 200 and the base 110. Therefore, the specific range of values ​​for d2 can be determined according to the process parameters of the semiconductor process, or it can be determined experimentally. These will not be listed here.

[0035] In some embodiments, the top surface of the distance sensor 120 is lower than the top surface of the base 110, or the top surface of the distance sensor 120 is flush with the top surface of the base 110. This avoids the top surface of the distance sensor 120 being higher than the top surface of the base 110, which could cause the bottom surface of the wafer 200 to scrape against the distance sensor 120.

[0036] It should be noted that, generally speaking, the distance sensor 120 detects the distance between its detection section and the bottom surface of the wafer 200. After the distance sensor 120 is installed in place, the vertical distance between its detection section and the top surface of the base 110 can be determined first. Then, based on the distance between the detection section of the distance sensor 120 and the bottom surface of the wafer 200, and the vertical distance between the detection section of the distance sensor 120 and the top surface of the base 110, the distance between the top surface of the base 110 and the bottom surface of the wafer 200 can be determined.

[0037] refer to Figure 8 and Figure 9 In some embodiments, the number of distance sensors 120 can be at least two. Taking two distance sensors 120 as an example, the distances between the base 110 and the wafer 200 detected by the two distance sensors 120 are d11 and d12, respectively. Furthermore, based on the distances between the two distance sensors 120, and d11 and d12, the warpage of the wafer 200 can be determined, thereby determining the distance between the closest part of the wafer 200 and the base 110. Furthermore, based on the distance between the closest part of the wafer 200 and the base 110, the lifting drive device 140 can be used to drive the wafer 200 to move up and down with the support ring 130. For example, after the wafer 200 is lifted, the distances between the base 110 and the wafer 200 detected by the two distance sensors 120 are d21 and d22 respectively; so that the distance between the wafer 200 and the base 110 meets the process requirements while ensuring that the wafer 200 does not scrape against the base 110.

[0038] It should be noted that when there are at least two distance sensors 120, the detection part of the distance sensor 120 does not need to be oriented vertically toward the center of the support ring 130. This allows for more flexible arrangement of the distance sensors 120.

[0039] It should also be noted that in other embodiments, only one distance sensor 120 may be provided. For example, when a distance sensor 120 is aligned with a position 50 mm from the center of wafer 200, the relationship between the position 50 mm from the center of wafer 200 and the distance sensor 120, and the distance between the center of wafer 200 and the base 110, can be determined experimentally. Therefore, based on the position 50 mm from the center of wafer 200 detected by the distance sensor 120, the distance between the center of wafer 200 and the base 110 can be calculated. Thus, even when there is only one distance sensor 120, and it is not aligned with the center of wafer 200, the distance between wafer 200 and the base 110 can still be determined using the parameters obtained by the distance sensor 120.

[0040] refer to Figure 4 In some embodiments, the lifting drive device 140 includes at least three linear actuators 141. Each linear actuator 141 is connected to the base 110 and the support ring 130, and the linear actuators 141 are spaced apart along the circumferential direction of the support ring 130. In this way, the wafer 200 supported on the support ring 130 can be raised and lowered relative to the base 110 by driving the support ring 130 to rise and fall by the linear actuators 141.

[0041] In some embodiments, the linear actuator 141 includes a rotary motor and a ball screw drive mechanism. Exemplarily, the ball screw includes a lead screw and a nut, with the rotary motor drivingly connected to the lead screw and the nut drivingly connected to the lead screw. Thus, the rotary motor can drive the lead screw to rotate, causing the nut to move linearly. Furthermore, the nut can be used to move the support ring 130.

[0042] Alternatively, in some embodiments, the linear actuator 141 is a linear motor. The linear motor is driven to move the support ring 130. It should be noted that a linear motor is a transmission device that directly converts electrical energy into linear motion mechanical energy without any intermediate conversion mechanism.

[0043] refer to Figure 4 and Figure 5 In some embodiments, the linear actuator 141 is a cylinder. The cylinder includes a piston rod 1411. The lifting drive device 140 also includes a first connector 142. The piston rod 1411 of each cylinder is connected to the first connector 142. Exemplarily, the piston rod 1411 may be welded to the first connector 142 or connected via a threaded connector. The first connector 142 is connected to a support ring 130. Thus, the cylinder can drive the first connector 142 to move, thereby moving the support ring 130.

[0044] refer to Figures 3 to 6In some embodiments, the cylinder further includes a cylinder body 1412, a piston 1413, and a first sealing ring 1414. The cylinder body 1412 has a receiving cavity 1415, the piston 1413 is slidably disposed in the receiving cavity 1415, and the piston rod 1411 is connected to the piston 1413. The bottom of the receiving cavity 1415 is open, and the base 110 has a gas passage 111 communicating with the bottom of the receiving cavity 1415. The first sealing ring 1414 is sandwiched between the cylinder body 1412 and the base 110.

[0045] In this way, the piston 1413 can be driven to move by supplying compressed gas to the accommodating cavity 1415 through the gas channel 111, thereby causing the piston rod 1411, the first connecting member 142 and the support ring 130 to move synchronously, so that the wafer 200 supported on the support ring 130 can move.

[0046] refer to Figure 5 In some embodiments, the cylinder further includes a second sealing ring 1416, a cover 1417, and a third sealing ring 1418. The second sealing ring 1416 is sleeved on the piston 1413 and sandwiched between the piston 1413 and the cavity wall of the receiving cavity 1415 to improve the sealing between the piston 1413 and the cavity wall of the receiving cavity 1415.

[0047] refer to Figure 2 and Figure 5 The cover 1417 covers the end of the cylinder body 1412 facing away from the base 110. The cover 1417 has a through hole, through which the piston rod 1411 passes, and the third sealing ring 1418 is sandwiched between the wall of the through hole and the piston rod 1411. This improves the sealing performance between the cover 1417 and the piston rod 1411. For example, the third sealing ring 1418 is a buffer sealing ring, which can also reduce the friction between the cover 1417 and the piston rod 1411.

[0048] refer to Figure 7 In some embodiments, the lifting drive device 140 includes a linear actuator 141, a first connector 142, and a second connector 143. Exemplarily, the first connector 142 is a first ring, and the second connector 143 is a second ring. The linear actuator 141 is connected to both the first connector 142 and the second connector 143. Thus, by connecting the linear actuators 141 to the first connector 142 and the second connector 143 respectively, multiple linear actuators 141 can form an integral connection with the first connector 142 and the second connector 143, thereby facilitating the connection of the lifting drive device 140 to the base 110 and the support ring 130 respectively.

[0049] refer to Figure 1In some embodiments, the semiconductor process chamber 100 further includes a chamber body 150, a shield 160, and a cover ring 170. The shield 160 is supported on a support portion at the top of the chamber body 150. The cover ring 170 is supported on the shield 160 and is fitted within the area surrounding the shield 160. The cover ring 170 covers a support ring 130. The support ring 130 includes an inner convex ring and an outer convex ring. The wafer 200 is supported on the inner convex ring. The cover ring 170 covers the outer convex ring.

[0050] In some embodiments, the semiconductor process chamber 100 further includes a support mechanism 180 and a support mechanism drive device 190. The support mechanism 180 includes at least three ejector pins and a bracket. Each ejector pin is respectively disposed in the base 110 and is respectively connected to the bracket. The support mechanism drive device 190 is drivenly connected to the bracket, thereby driving each ejector pin to rise and fall with the bracket.

[0051] For example, when it is necessary to transfer wafer 200 into the semiconductor process chamber 100, the support mechanism drive device 190 can be used to drive the support to rise, so that the top of the ejector pin protrudes from the upper surface of the base 110. Then, the wafer transfer robot can place wafer 200 on the top of the ejector pin. When processing is required, the support mechanism drive device 190 can be used to drive the ejector pin to descend with the support, so that wafer 200 is supported on the support ring 130.

[0052] Furthermore, after the process is completed, the support mechanism drive device 190 can be used to drive the ejector pin to rise with the support, thereby lifting the wafer 200. Further, a wafer transfer robot can then remove the wafer 200 supported on the ejector pin.

[0053] This application provides a control method for a semiconductor process chamber. The control method for a semiconductor process chamber provided in this application can be applied to any of the semiconductor process chambers 100 provided in this application. (Reference) Figure 10 The semiconductor process chamber control method provided in this application includes: Step 10: Use a distance sensor to detect the measured distance between the wafer supported on the support ring and the base.

[0054] In embodiments of this application, a distance sensor 120 can be used to detect the measured distance of the wafer 200 supported on the support ring 130 relative to the base 110. For example, refer to... Figure 2For example, the measured distance is d1. It should be noted that during the semiconductor process, the measured distance between the wafer 200 supported on the support ring 130 and the base 110 can be detected in real time. Alternatively, the measured distance between the wafer 200 supported on the support ring 130 and the base 110 can be detected intermittently at preset intervals.

[0055] Step 20: Based on the measured distance, control the lifting drive device to drive the wafer to rise and fall with the support ring, so as to adjust the wafer to the target distance relative to the base.

[0056] In embodiments of this application, the lifting drive device 140 can be controlled to drive the wafer 200 to rise and fall with the support ring 130 based on the measured distance, so as to adjust the wafer 200 to a target distance relative to the base 110. For example, refer to... Figure 3 The wafer 200 can be driven to rise with the support ring 130 by the drive device 140, so that the wafer 200 is spaced d2 distance from the base 110.

[0057] In some embodiments, when the semiconductor process chamber is in the initial stage of the process, the distance between the wafer 200 and the base 110 is the process distance d. It can be understood that the process distance d is the distance between the bottom of the wafer 200 and the base 110 before the wafer 200 is heated in the initial stage of the process.

[0058] Furthermore, step 20 described above includes: when the measured distance is less than 1 / 4d, controlling the lifting drive device 140 to drive the wafer 200 to rise with the support ring 130, so as to adjust the wafer 200 to a target distance relative to the base 110. The target distance is 1 / 2d to 3 / 4d. For example, the target distance is 1 / 2d; or the target distance is 3 / 5d; or the target distance is 3 / 4d.

[0059] For example, as the temperature of wafer 200 gradually increases, the deformation of wafer 200 under gravity gradually increases, thereby gradually decreasing the distance between the bottom surface of wafer 200 and base 110. When the distance between the bottom surface of wafer 200 and base 110 decreases to less than 1 / 4d, the lifting drive device 140 is controlled to drive wafer 200 to rise with support ring 130. For example, wafer 200 can be raised to a position 3 / 5d away from base 110.

[0060] As semiconductor processes progress, for example, the temperature of wafer 200 gradually decreases from its highest temperature, thus reducing the deformation of wafer 200. After the deformation of wafer 200 decreases, the lifting drive device 140 can be controlled to drive wafer 200 downwards with the support ring 130, thereby reducing the distance between wafer 200 and base 110. In this way, when base 110 is a heat dissipation base, reducing the distance between wafer 200 and base 110 improves the heat dissipation effect of the heat dissipation base on wafer 200. It is understandable that when the heat dissipation base provides good heat dissipation for wafer 200, the temperature of wafer 200 will decrease, which in turn reduces the deformation of wafer 200, making it less likely for wafer 200 to rub against base 110.

[0061] This application provides a semiconductor process apparatus. (See reference...) Figure 11 The semiconductor process equipment 1 includes a wafer transfer device 300 and any of the semiconductor process chambers 100 provided in the embodiments of this application. Exemplarily, the wafer transfer device 300 is a wafer transfer robot.

[0062] Furthermore, when the semiconductor process equipment 1 is a back-gold process equipment and the semiconductor process chamber 100 is a back-gold process chamber, the semiconductor process equipment 1 also includes: a load port 400, an equipment front end module (EFEM) 500, a load lock 600, and a degassing chamber 700.

[0063] The back-gold process transfer path is as follows: the wafer is retrieved from the front-opening unified pod (FOUP) on the loading port 400, flipped by the front-end module 500, and then transferred to the loading lock 600. Next, the wafer is transferred to the degassing chamber 700 for degassing. Finally, the wafer is transferred to the semiconductor process chamber 100. Exemplarily, each semiconductor process chamber 100 deposits aluminum (Al), titanium (Ti), nickel-vanadium (NiV), and silver (Ag) thin films on the back side of the wafer, and finally, the wafer is transferred back to the front-opening unified pod on the loading port 400.

[0064] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0065] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber, characterized in that, include: Base (110), distance sensor (120), support ring (130) and lifting drive device (140); The support ring (130) is connected to the base (110) via the lifting drive device (140). The support ring (130) is used to carry the wafer (200), wherein the wafer (200) carried on the support ring (130) is located above the base (110). The distance sensor (120) is connected to the base (110). The distance sensor (120) is used to detect the distance of the wafer (200) relative to the base (110). The lifting drive device (140) is used to drive the wafer (200) to rise and fall with the support ring (130) to adjust the wafer (200) to a target distance relative to the base (110).

2. The semiconductor process chamber according to claim 1, characterized in that, The detection part of the distance sensor (120) is vertically oriented toward the center of the support ring (130).

3. The semiconductor process chamber according to claim 2, characterized in that, The top surface of the distance sensor (120) is lower than the top surface of the base (110), or the top surface of the distance sensor (120) is flush with the top surface of the base (110).

4. The semiconductor process chamber according to claim 1, characterized in that, The lifting drive device (140) includes at least three linear actuators (141), each of which is connected to the base (110) and the support ring (130), and the linear actuators (141) are spaced apart along the circumferential direction of the support ring (130).

5. The semiconductor process chamber according to claim 4, characterized in that, The linear actuator (141) is a cylinder, the cylinder includes a piston rod (1411), the lifting drive device (140) also includes a first connector (142), the piston rod (1411) of each cylinder is connected to the first connector (142), and the first connector (142) is connected to the support ring (130).

6. The semiconductor process chamber according to claim 5, characterized in that, The cylinder further includes a cylinder body (1412), a piston (1413), a first sealing ring (1414), a second sealing ring (1416), a cover (1417), and a third sealing ring (1418). The cylinder body (1412) is provided with a receiving cavity (1415). The piston (1413) is slidably disposed in the receiving cavity (1415). The piston rod (1411) is connected to the piston (1413). The bottom of the receiving cavity (1415) is open. The base (110) is provided with a gas passage (111) communicating with the bottom of the receiving cavity (1415). The first sealing ring (1414) is sandwiched between the cylinder body (1412) and the base (110). The second sealing ring (1416) is sleeved on the outside of the piston (1413) and sandwiched between the piston (1413) and the cavity wall of the receiving cavity (1415); The cover (1417) covers one end of the cylinder (1412) away from the base (110). The cover (1417) is provided with a through hole. The piston rod (1411) passes through the through hole. The third sealing ring (1418) is sandwiched between the hole wall of the through hole and the piston rod (1411).

7. The semiconductor process chamber according to claim 1, characterized in that, When the semiconductor process chamber is in the initial stage of the process, the distance between the wafer (200) and the base (110) is the process distance d; The target distance is 1 / 2d to 3 / 4d.

8. A method for controlling a semiconductor process chamber, applied to the semiconductor process chamber according to any one of claims 1 to 6, characterized in that, The control method includes: The distance sensor (120) is used to detect the measured distance of the wafer (200) supported on the support ring (130) relative to the base (110); Based on the measured distance, the lifting drive device (140) is controlled to drive the wafer (200) to rise and fall with the support ring (130) so as to adjust the wafer (200) to the target distance relative to the base (110).

9. The method for controlling a semiconductor process chamber according to claim 8, characterized in that, When the semiconductor process chamber is in the initial stage of the process, the distance between the wafer (200) and the base (110) is the process distance d; Based on the measured distance, controlling the lifting drive device (140) to drive the wafer (200) to rise and fall with the support ring (130) to adjust the wafer (200) to a target distance relative to the base (110) includes: When the measured distance is less than 1 / 4d, the lifting drive device (140) is controlled to drive the wafer (200) to rise with the support ring (130) to adjust the wafer (200) to a target distance relative to the base (110), wherein the target distance is 1 / 2d to 3 / 4d.

10. A semiconductor process apparatus, characterized in that, include: The wafer transport device (300) and the semiconductor process chamber according to any one of claims 1 to 7.

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