An integrated chip heat exchange top cover and an electronic device comprising the same

Abstract

The application discloses an integrated chip heat exchange top cover and electronic equipment containing the same, and belongs to the technical field of microelectronic device heat dissipation. The integrated chip heat exchange top cover comprises a chip heat exchange top cover, and the chip heat exchange top cover is sealingly connected with a chip bottom plate. A top cover inner cavity is formed on the side of the chip heat exchange top cover facing the chip bottom plate, and the top cover inner cavity is used for accommodating a chip core. The side of the chip heat exchange top cover away from the chip core is a top cover surface, and the side of the top cover inner cavity facing the chip core is provided with a temperature equalizing layer. The temperature equalizing layer and the heat dissipation top cover are integrated, the remaining independent components are reduced, the thickness in the vertical direction is reduced, the device with limited space is very friendly, the chip packaging link can be installed in place at one time, and the production process is simplified.

Description

Technical Field

[0001] This invention belongs to the field of heat dissipation technology for microelectronic devices, and more specifically relates to an integrated chip heat exchange top cover and an electronic device containing the same. Background Technology

[0002] With the rapid development of artificial intelligence and chip technology, the power density of high-performance computing chips, data center server chips, and AI accelerator chips continues to increase. Under high-load operating conditions, chips are prone to generating high heat flux density and localized hot spots, which in turn affect device performance, operational stability, and lifespan. Therefore, efficient and reliable chip heat dissipation technology has become one of the key bottlenecks restricting the development of high-performance chips.

[0003] Currently, traditional metal heat sinks use materials such as copper or aluminum to enhance heat dissipation by increasing the fin area. However, due to limitations in the thermal conductivity of these materials, they are unable to handle high heat flux densities and suffer from problems such as high interfacial thermal resistance and the formation of localized hot spots. Heat pipes or vapor chambers, on the other hand, utilize the principle of phase change to achieve efficient heat dissipation. However, heat pipes or vapor chambers, as independent components attached to the heat sink, increase the contact interface and overall thermal resistance. The assembly of multiple components also leads to a complex structure and increased thickness. Summary of the Invention

[0004] To solve the above problems, the present invention adopts the following technical solution: An integrated chip heat exchange top cover, used in conjunction with a chip base plate containing a chip core for heat exchange, includes: A chip substrate, wherein a chip core is mounted on the chip substrate; A chip heat exchange top cover is sealed to the chip base plate; the chip heat exchange top cover has an inner cavity on the side facing the chip base plate, which is used to accommodate the chip core; the side of the chip heat exchange top cover away from the chip core is the top cover surface, and a temperature homogenizing layer is provided on the side of the inner cavity facing the chip core.

[0005] Furthermore, the top cover surface has a number of microribs on the side facing away from the chip core for enhancing heat transfer. The microribs are microrib pillars and / or microrib plates, and the microribs are arranged in an array aligned arrangement or an array staggered arrangement.

[0006] Furthermore, when the contact material between the chip heat exchange top cover and the temperature homogenization layer is the same, the chip heat exchange top cover and the temperature homogenization layer are integrally formed or integrally processed continuous material entities; When the contact materials of the chip heat exchange top cover and the heat spreader are different, the heat spreader is provided with a first interface modification layer on the side away from the chip core, and the chip heat exchange top cover and the heat spreader are fixedly connected by brazing.

[0007] Furthermore, the chip core and the heat spreader are connected by brazing or filling with interface material; Wherein, when the chip core and the heat spreader are connected by soldering, the heat spreader is provided with a second interface modification layer on the side facing the chip core; When the chip core and the heat spreader are connected by an interface material, the interface material includes at least one or more of the following: silicone grease, thermal adhesive, thermal paste, thermal pad, and liquid metal.

[0008] Furthermore, both the first interface modification layer and the second interface modification layer include at least one of an activation bonding layer, a diffusion barrier layer, and a solder wetting layer; The activated bonding layer is one or more of titanium, chromium, molybdenum, tungsten, zirconium, and hafnium; The diffusion barrier layer is one or more of nickel, molybdenum, tungsten, tantalum, and niobium; The solder wetting layer is one or more of silver, copper, gold, and nickel.

[0009] Furthermore, the temperature equalization layer is a temperature equalization component, a single high thermal conductivity material layer, or a composite high thermal conductivity material layer; The temperature-equalizing component is a VC temperature-equalizing plate or a heat pipe; The single high thermal conductivity material layer is a graphene film, graphite sheet, aluminum plate, copper plate, silver plate, diamond layer, or electrospun liquid metal composite film. The composite high thermal conductivity material layer is formed by combining at least two of the single high thermal conductivity materials, and the composite high thermal conductivity material layer is a graphite-metal composite thermal expansion layer, a VC heat spreader-high thermal conductivity substrate coupling structure, or a copper-diamond composite heat spreader layer.

[0010] Furthermore, the connection between the chip heat exchange top cover and the chip base plate is achieved by at least one of edge sealant, structural adhesive connection, mechanical connection, or welding.

[0011] Furthermore, a cooling terminal is installed on the surface of the top cover, which is either an air-cooled heat dissipation system or a liquid-cooled circulating heat dissipation system.

[0012] Furthermore, the microribs are solid metal structures and / or porous metal structures, and the surfaces of the microribs and / or the top cover are covered with capillary structures.

[0013] An electronic device comprising the integrated chip heat exchange top cover as described in any of the preceding claims.

[0014] Compared with the prior art, the present invention has the following beneficial effects: (1) Compact structure, easy to integrate and package: The present invention integrates the heat exchange layer into the chip heat exchange top cover, which reduces the number of independent heat exchange components and their connecting parts, can reduce the overall thickness of the chip heat dissipation structure in the vertical direction, simplify the assembly and packaging process, and is conducive to improving the structural integration, especially suitable for electronic devices with limited internal installation space.

[0015] (2) Shortening the heat transfer path and improving temperature uniformity and heat exchange capacity: This invention sets a temperature uniformity layer on the side of the chip heat exchange top cover facing the chip core, so that the heat generated by the chip core can be directly transferred to the temperature uniformity layer through the necessary connection interface, reducing intermediate heat transfer interfaces and lowering interface thermal resistance. The temperature uniformity layer can diffuse the local concentrated heat flow generated by the chip core to a larger area of ​​the top cover, improve the temperature uniformity of the chip heat exchange top cover, and facilitate further heat transfer to the surface of the top cover.

[0016] (3) Flexible heat dissipation methods and wide applicability: The top cover surface of this invention can be equipped with micro-ribs, capillary structures, and other heat transfer enhancement structures according to heat dissipation requirements, and can be used in conjunction with air-cooled or liquid-cooled circulating heat dissipation systems. When the heat spreader layer uses a heat spreader plate or heat pipe, phase change heat transfer can be used to enhance heat diffusion; when the heat spreader layer uses a high thermal conductivity material layer, the high thermal conductivity material can be used to enhance lateral heat conduction. Therefore, this invention can adapt to the heat dissipation requirements of chips under different power levels, packaging forms, and cooling conditions. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0018] Figure 1 Exploded view of the integrated chip heat exchanger top cover structure; Figure 2 Top view of the integrated chip heat exchanger top cover; Figure 3 Cross-sectional view of the integrated chip heat exchanger top cover; Figure 4 This is a schematic diagram of the chip substrate; Figure 5 This is a schematic diagram of the chip heat exchange top cover; Figure 6 This is a cross-sectional view of the chip heat exchanger top cover; Figure 7 This is a schematic diagram of the top cover surface; Figure 8 A schematic diagram of an array of staggered microrib structures; Figure 9A schematic diagram of a microrib structure arranged in an array; Figure 10 This is a schematic diagram of capillary structure.

[0019] In the figure, 1 is the chip substrate; 11 is the chip core; 2 is the chip heat exchange top cover; 21 is the top cover surface; 22 is the top cover inner cavity; 23 is the heat spreader layer; 211 is the microrib; and 212 is the capillary structure. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Example 1

[0022] refer to Figure 1 - Figure 10 An integrated chip heat exchange top cover is used in conjunction with a chip base plate 1 having a chip core 11 for heat exchange. The integrated chip heat exchange top cover includes a chip heat exchange top cover 2, which is sealed to the chip base plate 1. A top cover cavity 22 is formed on the side of the chip heat exchange top cover 2 facing the chip base plate 1, and the top cover cavity 22 is used to accommodate the chip core 11. The side of the chip heat exchange top cover 2 away from the chip core 11 is the top cover surface 21, and a heat equalization layer 23 is provided on the side of the top cover cavity 22 facing the chip core 11.

[0023] Among them, the chip heat exchange top cover 2 covers the chip base plate 1 and is used for packaging and enhancing heat exchange.

[0024] In this embodiment, the top cover surface 21 is provided with a plurality of micro ribs 211 for enhancing heat exchange on the side facing away from the chip core 11. The micro ribs 211 are micro rib pillars and / or micro ribs, and the micro ribs 211 are arranged in an array aligned arrangement or an array staggered arrangement.

[0025] In specific applications, such as Figure 10 As shown, the microrib 211 is a solid metal structure and / or a porous metal structure, and the surface of the microrib 211 and / or the top cover surface 21 is covered with capillary structures 212.

[0026] In this embodiment, when the contact material between the chip heat exchange top cover 2 and the heat spreader 23 is the same, the chip heat exchange top cover 2 and the heat spreader 23 are integrally formed or integrally processed continuous material entities. When the contact materials of the chip heat exchange top cover 2 and the heat spreader 23 are different, the heat spreader 23 is provided with a first interface modification layer on the side away from the chip core 11, and the chip heat exchange top cover 2 and the heat spreader 23 are fixedly connected by brazing.

[0027] In this embodiment, the chip core 11 and the heat spreader 23 are connected by brazing or interface material filling, with brazing being preferred to reduce thermal resistance.

[0028] When the chip core 11 and the heat spreader 23 are connected by brazing, the heat spreader 23 is provided with a second interface modification layer on the side facing the chip core 11. When the chip core 11 and the heat spreader 23 are connected by an interface material, the interface material includes at least one or more of the following: silicone grease, thermal adhesive, thermal paste, thermal pad, and liquid metal.

[0029] In this embodiment, both the first interface modification layer and the second interface modification layer include at least one of an activation bonding layer, a diffusion barrier layer, and a solder wetting layer; The activated bonding layer is one or more of titanium, chromium, molybdenum, tungsten, zirconium, and hafnium; The diffusion barrier layer is one or more of nickel, molybdenum, tungsten, tantalum, and niobium; The solder wetting layer is one or more of silver, copper, gold, and nickel.

[0030] In this embodiment, the temperature distribution layer 23 and the chip heat exchange top cover 2 are preferably integrally formed, and the temperature distribution layer 23 is a temperature distribution component, a single high thermal conductivity material layer or a composite high thermal conductivity material layer. The heat exchanger is either a VC vapor chamber or a heat pipe. The single high thermal conductivity material layer can be a graphene film, graphite sheet, aluminum plate, copper plate, silver plate, diamond layer, or electrospun liquid metal composite film. The composite high thermal conductivity material layer is formed by combining at least two single high thermal conductivity materials. The composite high thermal conductivity material layer is preferably a graphite-metal composite thermal expansion layer, a VC heat spreader-high thermal conductivity substrate coupling structure, or a copper-diamond composite heat spreader layer.

[0031] In this embodiment, the connection between the chip heat exchange top cover 2 and the chip base plate 1 is achieved by at least one of the following methods: edge sealant connection, structural adhesive connection, mechanical connection, or welding.

[0032] In this embodiment, a cooling terminal is installed on the top cover surface 21. The cooling terminal is an air-cooled heat dissipation system or a liquid-cooled circulating heat dissipation system.

[0033] Specifically, when the top cover surface 21 is processed with micro ribs 211, the cooling terminal provides a cooling medium, and the cooling medium directly convects and exchanges heat with the top cover surface 21; when the top cover surface 21 is not processed with micro ribs 211, the heat-conducting bottom surface of the air-cooled heat dissipation system or the cold plate of the liquid-cooled circulating heat dissipation system is in contact with the top cover surface 21 to conduct heat exchange and remove the heat conducted from the chip core 11 to the top cover surface 21. The top cover surface 21 has microribs 211, which provide passive natural convection heat dissipation when there is no cooling terminal; When there are micro-ribs 211 on the surface 21 of the top cover, it is an active forced convection heat dissipation when there are cooling terminals; In specific applications, when the liquid cooling circulation heat dissipation system is a cover plate with a cooling medium inlet and a cooling medium outlet, the cooling medium enters the sealed space from the cooling medium inlet. The sealed space is the space formed between the cover plate with the cooling medium inlet and the cooling medium outlet and the integrated chip heat exchange top cover. The cooling medium flows through the micro ribs 211 and the top cover surface 21 and carries away the heat. The cooling medium flows out through the cooling medium outlet. In specific applications, when the liquid cooling circulation heat dissipation system includes a jet cover plate with a cooling medium inlet and a cooling medium outlet, the jet cover plate has a cooling medium inlet and a cooling medium outlet. The cooling medium is sprayed at high speed through the cooling medium inlet to impact the surface of the micro rib 211 and the top cover surface 21 and flows out through the cooling medium outlet, carrying away heat.

[0034] The working principle of this invention is as follows: the integrated chip heat exchange top cover evenly diffuses the heat of the chip core to a larger heat dissipation area, the heat homogenization layer is used to improve the temperature uniformity of the chip heat exchange top cover, and the heat diffused by the heat homogenization layer is transferred to the surface of the top cover and carried away by the cooling terminal.

[0035] Example 2

[0036] An electronic device includes the integrated chip heat exchange top cover provided in Embodiment 1.

[0037] The technical solutions of the present invention have been fully described above. It should be noted that the specific embodiments of the present invention are not limited to the above description. All technical solutions formed by those skilled in the art based on the spirit and essence of the present invention by adopting equivalent transformations or equivalent transformations in terms of structure, method or function fall within the protection scope of the present invention.

Claims

1. An integrated chip heat exchange top cover, used in conjunction with a chip base plate (1) having a chip core (11) for heat exchange, characterized in that, The integrated chip heat exchange top cover includes: a chip heat exchange top cover (2), which is sealed to the chip base plate (1); the chip heat exchange top cover (2) has a top cover cavity (22) on the side facing the chip base plate (1), which is used to accommodate the chip core (11); the side of the chip heat exchange top cover (2) facing away from the chip core (11) is the top cover surface (21), and the side of the top cover cavity (22) facing the chip core (11) is provided with a heat equalization layer (23).

2. The integrated chip heat exchange top cover according to claim 1, characterized in that, The top cover surface (21) has a number of micro ribs (211) on the side facing away from the chip core (11) for enhancing heat exchange. The micro ribs (211) are micro rib pillars and / or micro rib plates. The micro ribs (211) are arranged in an array aligned arrangement or an array staggered arrangement.

3. The integrated chip heat exchange top cover according to claim 1, characterized in that, When the contact material of the chip heat exchange top cover (2) and the temperature uniform layer (23) is the same, the chip heat exchange top cover (2) and the temperature uniform layer (23) are integrally formed or integrally processed continuous material entities; When the contact materials of the chip heat exchange top cover (2) and the heat spreader (23) are different, the heat spreader (23) is provided with a first interface modification layer on the side away from the chip core (11), and the chip heat exchange top cover (2) and the heat spreader (23) are fixedly connected by brazing.

4. The integrated chip heat exchange top cover according to claim 3, characterized in that, The chip core (11) and the heat spreader (23) are connected by brazing or filling with interface material; When the chip core (11) and the heat spreader (23) are connected by brazing, the heat spreader (23) is provided with a second interface modification layer on the side facing the chip core (11); When the chip core (11) and the heat spreader (23) are connected by an interface material, the interface material includes at least one or more of the following: silicone grease, thermal adhesive, thermal paste, thermal pad, and liquid metal.

5. The integrated chip heat exchange top cover according to claim 4, characterized in that, Both the first interface modification layer and the second interface modification layer include at least one of an activation bonding layer, a diffusion barrier layer, and a solder wetting layer; The activated bonding layer is one or more of titanium, chromium, molybdenum, tungsten, zirconium, and hafnium; The diffusion barrier layer is one or more of nickel, molybdenum, tungsten, tantalum, and niobium; The solder wetting layer is one or more of silver, copper, gold, and nickel.

6. The integrated chip heat exchange top cover according to claim 3, characterized in that, The temperature homogenizing layer (23) is a temperature homogenizing component, a single high thermal conductivity material layer, or a composite high thermal conductivity material layer; The temperature-equalizing component is a VC temperature-equalizing plate or a heat pipe; The single high thermal conductivity material layer is a graphene film, graphite sheet, aluminum plate, copper plate, silver plate, diamond layer, or electrospun liquid metal composite film. The composite high thermal conductivity material layer is formed by combining at least two of the single high thermal conductivity materials, and the composite high thermal conductivity material layer is a graphite-metal composite thermal expansion layer, a VC heat spreader-high thermal conductivity substrate coupling structure, or a copper-diamond composite heat spreader layer.

7. The integrated chip heat exchange top cover according to claim 1, characterized in that, The connection between the chip heat exchange top cover (2) and the chip base plate (1) is achieved by one of the following methods: edge sealant connection, structural adhesive connection, mechanical connection, or welding.

8. The integrated chip heat exchange top cover according to claim 1, characterized in that, A cooling terminal is installed on the surface (21) of the top cover. The cooling terminal is an air-cooled heat dissipation system or a liquid-cooled circulating heat dissipation system.

9. The integrated chip heat exchange top cover according to claim 2, characterized in that, The microrib (211) is a solid metal structure and / or a porous metal structure, and the surface of the microrib (211) and / or the surface of the top cover (21) is covered with capillary structures (212).

10. An electronic device, characterized in that, Includes the integrated chip heat exchange top cover as described in any one of claims 1 to 9.

Images