Automatic temperature measurement system for crystal growth workshop

Abstract

The utility model provides an automatic temperature measurement system for a crystal growth workshop, which relates to the field of silicon carbide crystal growth and is characterized in that a horizontal moving device is arranged above a plurality of crystal growth furnaces, and an infrared thermometer is driven by the horizontal moving device to move to the position right above a temperature measurement window of each crystal growth furnace for temperature measurement. Therefore, automatic temperature measurement of a plurality of crystal growth furnaces in a crystal growth workshop can be realized, time and labor are saved, the temperature measurement efficiency is improved, vibration of the crystal growth furnaces can be effectively avoided, and the growth quality of silicon carbide crystals in the furnaces is ensured.

Description

Technical Field

[0001] The utility model relates to the field of silicon carbide crystal growth, and in particular to an automatic temperature measurement system for a crystal growth workshop. Background Art

[0002] Silicon carbide (SiC), as an emerging third-generation semiconductor core material, has excellent properties such as wide bandgap, high critical breakdown electric field strength, high electron mobility, good radiation resistance and chemical stability. This makes it an important substrate wafer material with wide applications, showing good application prospects in the fields of aviation devices, new energy vehicles, rail transportation and household appliances.

[0003] The crystal growth furnace for growing silicon carbide crystals needs to be regularly measured to monitor the crystal growth and ensure the quality of crystal growth. However, the existing temperature measurement is done manually by using a handheld infrared thermometer to measure the temperature window on the top of the crystal growth furnace, which is not only time-consuming and laborious, but also requires the operator to climb up the crystal growth furnace support, which may cause slight vibrations in the entire crystal growth furnace and affect the growth quality of silicon carbide crystals. Utility Model Content

[0004] The purpose of the utility model includes, for example, providing an automatic temperature measurement system for a crystal growth workshop, which can realize automatic temperature measurement of a crystal growth furnace, improve the temperature detection efficiency, and ensure the quality of silicon carbide crystal growth.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] The utility model provides an automatic temperature measurement system for a crystal growth workshop, which is used in a crystal growth workshop. A plurality of crystal growth furnaces are placed on the ground of the crystal growth workshop, and a temperature measurement window is arranged on the top of each of the crystal growth furnaces. The system comprises:

[0007] A horizontal moving device, the horizontal moving device is arranged above the plurality of crystal growth furnaces;

[0008] An infrared thermometer is arranged on the horizontal moving device and is used to move in sequence to the top of the temperature measuring windows of the multiple crystal growth furnaces for temperature measurement under the drive of the horizontal moving device.

[0009] In some optional embodiments, the automatic temperature measurement system of the crystal growth workshop further includes a sensor array, wherein the sensor array includes a plurality of in-place sensors, and the plurality of in-place sensors correspond one by one to the temperature measurement windows of the plurality of crystal growth furnaces in a vertical direction;

[0010] The horizontal moving device is located below the sensor array, and a sensing element for being detected by the in-place sensor is disposed on the top of the infrared thermometer;

[0011] A control device is simultaneously connected to the sensor array, the horizontal moving device and the infrared thermometer for controlling the horizontal moving device to drive the infrared thermometer to move sequentially to the top of the temperature measuring windows of the plurality of crystal growth furnaces for temperature measurement.

[0012] In some optional embodiments, the sensor array includes a plurality of verification sensors respectively connected to the control device for communication, the plurality of verification sensors correspond to the plurality of in-place sensors one by one, each of the verification sensors is arranged at intervals with the corresponding in-place sensor in the horizontal direction, and the sensing element can be detected by the verification sensor;

[0013] In some optional embodiments, the in-place sensor and the verification sensor are Hall sensors, and the induction element is a magnet.

[0014] In some optional embodiments, the in-place sensor and the verification sensor are infrared sensors, and the sensing element is a baffle.

[0015] In some optional embodiments, the communication method between the control device and the infrared thermometer is wireless communication.

[0016] In some optional embodiments, the communication mode between the control device and the sensor array is wired communication.

[0017] In some optional embodiments, the control device is electrically connected to a human-machine interface.

[0018] In some optional embodiments, the plurality of crystal growth furnaces are arranged in a rectangular array.

[0019] In some optional embodiments, the horizontal moving device includes an X-axis moving device and a Y-axis moving device, the Y-axis moving device is arranged on the side wall of the crystal growth workshop, the X-axis moving device is arranged on the Y-axis moving device, and the infrared thermometer is arranged on the X-axis moving device.

[0020] The beneficial effects of the embodiments of the present utility model include, for example:

[0021] The automatic temperature measurement system and method for a crystal growth workshop is realized by arranging a horizontal moving device above multiple crystal growth furnaces, and driving an infrared thermometer to move to just above the temperature measurement window of each crystal growth furnace for temperature measurement through the horizontal moving device. This can realize automatic temperature measurement of multiple crystal growth furnaces in the crystal growth workshop, which not only saves time and labor and improves the temperature measurement efficiency, but also can effectively avoid the vibration of the crystal growth furnace and ensure the growth quality of silicon carbide crystals in the furnace. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0023] Figure 1 A schematic diagram of the structure of an automatic temperature measurement system for a crystal growth workshop provided by an embodiment of the utility model;

[0024] Figure 2 A schematic diagram of the structure of a horizontal moving device provided in an embodiment of the utility model;

[0025] Figure 3 A control block diagram of an automatic temperature measurement system for a crystal growth workshop provided by an embodiment of the utility model;

[0026] Figure 4 A flow chart of an automatic temperature measurement method for a crystal growth workshop provided in an embodiment of the utility model.

[0027] Icons: 100-horizontal moving device; 110-Y-axis moving device; 120-X-axis moving device; 200-sensor array; 210-in-place sensor; 220-verification sensor; 300-infrared thermometer; 310-sensing element; 400-control device; 500-human-machine interface; 600-crystal growth furnace. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0030] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0031] In the description of the present utility model, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the utility model product is usually placed when used. It is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present utility model.

[0032] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.

[0033] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0034] In the prior art, the temperature of a crystal growth furnace is generally measured by an operator holding an infrared thermometer and climbing up the support of the crystal growth furnace, and then manually measuring the temperature by pointing the infrared thermometer at the temperature measuring window on the top of the crystal growth furnace. This temperature measurement method is not only time-consuming and labor-intensive, but also may cause vibration of the crystal growth furnace when the operator climbs up the support of the crystal growth furnace. Although the vibration is relatively slight, the growth of silicon carbide crystals is also very sensitive to slight vibrations, and its growth quality is likely to be seriously affected.

[0035] In view of the above situation, the utility model provides an automatic temperature measurement system and method for a crystal growth workshop, which can realize automatic temperature measurement of the crystal growth furnace. It not only saves time and labor, has high temperature measurement efficiency, but also does not cause any vibration to the crystal growth furnace, effectively ensuring the growth quality of the crystal.

[0036] The automatic temperature measurement system and method for a crystal growth workshop are described in detail below with reference to the accompanying drawings.

[0037] Please refer to Figure 1 , Figure 2 and Figure 3 The embodiment of the utility model provides an automatic temperature measurement system for a crystal growth workshop, which is used to automatically measure the temperature of a crystal growth furnace 600 in the crystal growth workshop.

[0038] The automatic temperature measurement system for a crystal growth workshop includes a crystal growth workshop, a sensor array 200 , a horizontal moving device 100 , an infrared thermometer 300 , a control device 400 and a human-machine interface 500 .

[0039] There are multiple crystal growth furnaces 600 placed on the floor of the crystal growth workshop. The multiple crystal growth furnaces 600 are arranged in a rectangular array, and a temperature measuring window is provided on the top of each of the crystal growth furnaces 600.

[0040] The sensor array 200 is disposed on the top of the crystal growth workshop and includes a plurality of in-place sensors 210 and a plurality of verification sensors 220. The plurality of in-place sensors 210 correspond one-to-one to the temperature measurement windows of the plurality of crystal growth furnaces 600 in the vertical direction. The plurality of verification sensors 220 correspond one-to-one to the plurality of in-place sensors 210 and are located on the same horizontal plane, and each of the verification sensors 220 is spaced apart from the corresponding in-place sensor 210 in the horizontal direction.

[0041] In this embodiment, the in-place sensor 210 is used to detect whether the infrared thermometer 300 has reached directly above the temperature measuring window of the crystal growth furnace 600. The verification sensor 220 can serve as a backup for the in-place sensor 210. When the corresponding in-place sensor 210 fails, it can replace the in-place sensor 210 for detection. On the other hand, it can assist the in-place sensor 210 in verifying the accuracy of the position of the infrared thermometer 300.

[0042] The in-position sensor 210 and the verification sensor 220 may be of different types as required, including but not limited to infrared sensors, Hall sensors, etc.

[0043] The horizontal moving device 100 is disposed above the plurality of crystal growth furnaces 600 and below the sensor array 200. Further, the horizontal moving device 100 includes an X-axis moving device 120 and a Y-axis moving device 110, wherein the Y-axis moving device 110 is disposed on the side wall of the crystal growth workshop, the X-axis moving device 120 is disposed on the Y-axis moving device 110, and the infrared thermometer 300 is disposed on the X-axis moving device 120. In this way, the infrared thermometer 300 can move along the X-direction and the Y-direction under the drive of the horizontal moving device 100, so as to reach the top of the temperature measuring window of each crystal growth furnace 600, and also the bottom of the corresponding in-position sensor 210.

[0044] In order to be detected by the in-place sensor 210 and the verification sensor 220, a sensing element 310 is provided on the top of the infrared thermometer 300. The specific type of the sensing element 310 is determined according to the type of sensor. For example, if the in-place sensor 210 and the verification sensor 220 are Hall sensors, the sensing element 310 is a magnet. When the infrared thermometer 300 moves to the right below the in-place sensor 210 or the verification sensor 220, the magnet can be detected by the Hall sensor. For another example, if the in-place sensor 210 and the verification sensor 220 are infrared sensors, the sensing element 310 is a baffle. When the infrared thermometer 300 moves to the right below the in-place sensor 210 or the verification sensor 220, the baffle can block the light of the infrared sensor, so that it can be detected.

[0045] The control device 400 is simultaneously connected to the sensor array 200, the horizontal moving device 100 and the infrared thermometer 300 in communication. Furthermore, the control device 400 is simultaneously connected to the multiple in-position sensors 210, the multiple verification sensors 220, the X-axis moving device 120, the Y-axis moving device 110, the infrared thermometer 300 and the human-machine interface 500 in communication. The control device 400 is used to control the horizontal moving device 100 to drive the infrared thermometer 300 to move to the top of the temperature measurement windows of the multiple crystal growth furnaces 600 in sequence for temperature measurement. During the movement of the infrared thermometer 300, the control device 400 can determine the position of the infrared thermometer 300 according to the detection results of the multiple in-position sensors 210 and the verification sensor 220 to ensure the accuracy of the temperature measurement position of the infrared thermometer 300.

[0046] The specific communication method between the control device 400 and the multiple in-position sensors 210, multiple verification sensors 220, X-axis moving device 120, Y-axis moving device 110, infrared thermometer 300 and human-machine interface 500 can be determined as needed. The communication method between the control device 400 and the mobile infrared thermometer 300 can be wireless communication to simplify the connection between the two. The communication method with the fixed multiple in-position sensors 210, multiple verification sensors 220, X-axis moving device 120, Y-axis moving device 110 and human-machine interface 500 can be wired communication to reduce costs.

[0047] Please refer to Figure 4 The embodiment of the utility model further provides an automatic temperature measurement method for a crystal growth workshop, which is applied to the control device 400 of the automatic temperature measurement system of the crystal growth workshop to realize automatic temperature measurement of multiple crystal growth furnaces 600 in the crystal growth workshop.

[0048] The automatic temperature measurement method of the crystal growth workshop specifically includes the following steps:

[0049] Step S100: Control the horizontal moving device 100 to drive the infrared thermometer 300 to move to the top of the temperature measuring window of a certain crystal growth furnace 600. This step is achieved by the control device 400 controlling the X-axis moving device 120 and the Y-axis moving device 110 to move the infrared thermometer 300. In the XY-axis plane coordinate system established with the initial position of the infrared thermometer 300 as the origin (0, 0), there is a corresponding coordinate point (x, y) just above the temperature measuring window of each crystal growth furnace 600 (that is, just below the in-place sensor 210). The coordinate points of all crystal growth furnaces 600 are pre-stored in the control device 400. When the infrared thermometer 300 is not working, it is in the initial position, that is, at the origin (0, 0). When it starts working, it moves along the X-axis and Y-axis under the drive of the horizontal moving device 100, and reaches the position corresponding to each coordinate point (x, y) in turn to measure the temperature. After measuring the temperature of all crystal growth furnaces 600, it returns to the initial position.

[0050] Step S200: Determine whether the infrared thermometer 300 has reached the top of the temperature measuring window of the crystal growth furnace 600. This step is implemented by the in-place sensor 210 and the induction element 310. Generally speaking, the infrared thermometer 300 can accurately reach the top of the temperature measuring window of each crystal growth furnace 600 by moving according to the pre-stored multiple coordinate points. However, due to various reasons, such as the operation failure of the horizontal moving device 100, the infrared thermometer 300 may not be in place. Therefore, the in-place sensor 210 is set to detect whether the infrared thermometer 300 is in place. When the infrared thermometer 300 reaches the corresponding coordinate point, if the induction element 310 can be detected by the in-place sensor 210, it means that it is in place. If not, it means that it may not be in place.

[0051] Furthermore, in order to further ensure that the infrared thermometer 300 is in place, after the infrared thermometer 300 is moved to the position directly below the in-place sensor 210 and is detected, it can move from the position directly below the in-place sensor 210 to the position directly below the corresponding verification sensor 220 according to the position and distance relationship between the in-place sensor 210 and the corresponding verification sensor 220. After the sensing element 310 is detected by the verification sensor 220, the infrared thermometer 300 returns to the position directly below the in-place sensor 210. This secondary detection method can better ensure the position accuracy of the infrared thermometer 300 when measuring temperature.

[0052] If it is determined that the infrared thermometer 300 is in place, step S300 is executed: the infrared thermometer 300 is controlled to measure the temperature. The measured temperature information is sent to the control device 400 and can be displayed through the human-machine interface 500.

[0053] After the temperature is measured, step S500 is executed: determining whether the measured temperature is within a normal temperature range.

[0054] If yes, it indicates that the crystal growth furnace 600 operates normally, and the above steps (ie step S100, step S200, step S300 and step S500) are repeated until the temperature measurement of all the crystal growth furnaces 600 is completed, and then the furnace can be shut down.

[0055] If not, it means that the crystal growth furnace 600 is not operating normally, and then step S400 is executed: a prompt message is sent to the operator. The prompt message can be displayed on the human-machine interface 500, sent through an alarm, or sent to the operator's mobile phone in the form of a text message.

[0056] If it is determined that the infrared thermometer 300 may not be in place, step S400 is also executed: a prompt message is sent to the operator. If the infrared thermometer 300 is not detected by the corresponding in place sensor 210, it means that it may not be in place, and the relevant operator needs to be notified to intervene for manual inspection.

[0057] The present automatic temperature measurement system and method for a crystal growth workshop is implemented by arranging a horizontal moving device 100 above a plurality of crystal growth furnaces 600, and driving an infrared thermometer 300 through the horizontal moving device 100 to move to just above the temperature measurement window of each crystal growth furnace 600 for temperature measurement, and detecting whether the infrared thermometer 300 has moved into place through a sensor array 200, thereby realizing automatic temperature measurement of a plurality of crystal growth furnaces 600 in the crystal growth workshop, which not only saves time and labor and improves the temperature measurement efficiency, but also can effectively avoid the vibration of the crystal growth furnace 600 and ensure the growth quality of silicon carbide crystals in the furnace.

[0058] The above is only a specific implementation of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by any technician familiar with the technical field within the technical scope disclosed in the present invention should be included in the protection scope of the present invention.

Claims

1. An automatic temperature measurement system for a crystal growth workshop, used in a crystal growth workshop, wherein a plurality of crystal growth furnaces (600) are placed on the floor of the crystal growth workshop, and a temperature measurement window is arranged on the top of each of the crystal growth furnaces (600), characterized in that: include: A horizontal moving device (100), the horizontal moving device (100) being arranged above the plurality of crystal growth furnaces (600); An infrared thermometer (300) is arranged on the horizontal moving device (100) and is used to move in sequence to the top of the temperature measurement windows of the multiple crystal growth furnaces (600) for temperature measurement under the drive of the horizontal moving device (100).

2. The automatic temperature measurement system for a crystal growth workshop according to claim 1, characterized in that: It also includes a sensor array (200), the sensor array (200) including a plurality of in-place sensors (210), the plurality of in-place sensors (210) corresponding one-to-one to the temperature measurement windows of the plurality of crystal growth furnaces (600) in a vertical direction; The horizontal moving device is located below the sensor array (200), and a sensing element (310) for being detected by the in-place sensor (210) is disposed on the top of the infrared thermometer (300); A control device (400), wherein the control device (400) is simultaneously connected to the sensor array (200), the horizontal moving device (100) and the infrared thermometer (300), and is used to control the horizontal moving device (100) to drive the infrared thermometer (300) to move sequentially to the top of the temperature measurement windows of the plurality of crystal growth furnaces (600) for temperature measurement.

3. The automatic temperature measurement system for a crystal growth workshop according to claim 2, characterized in that: The sensor array (200) comprises a plurality of verification sensors (220) respectively connected to the control device (400) for communication, the plurality of verification sensors (220) corresponding to the plurality of in-place sensors (210) one by one, each of the verification sensors (220) and the corresponding in-place sensor (210) being arranged at intervals in the horizontal direction, and the sensing element (310) can be detected by the verification sensor (220).

4. The automatic temperature measurement system for a crystal growth workshop according to claim 3, characterized in that: The in-place sensor (210) and the verification sensor (220) are Hall sensors, and the induction element (310) is a magnet.

5. The automatic temperature measurement system for a crystal growth workshop according to claim 3, characterized in that: The in-place sensor (210) and the verification sensor (220) are infrared sensors, and the sensing element (310) is a baffle.

6. The automatic temperature measurement system for a crystal growth workshop according to claim 2, characterized in that: The communication method between the control device (400) and the infrared thermometer (300) is wireless communication.

7. The automatic temperature measurement system for a crystal growth workshop according to claim 2, characterized in that: The communication mode between the control device (400) and the sensor array (200) is wired communication.

8. The automatic temperature measurement system for a crystal growth workshop according to claim 2, characterized in that: The control device (400) is electrically connected to a human-machine interface (500).

9. The automatic temperature measurement system for a crystal growth workshop according to claim 1, characterized in that: The multiple crystal growth furnaces (600) are arranged in a rectangular array.

10. The automatic temperature measurement system for a crystal growth workshop according to claim 1, characterized in that: The horizontal moving device (100) comprises an X-axis moving device (120) and a Y-axis moving device (110); the Y-axis moving device (110) is arranged on a side wall of the crystal growth workshop; the X-axis moving device (120) is arranged on the Y-axis moving device (110); and the infrared thermometer (300) is arranged on the X-axis moving device (120).

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