IGBT (Insulated Gate Bipolar Translator) module arrangement structure with three-level structure
Through the specific IGBT module layout structure and copper row connection method, the problems of inconvenient use and uneven heat dissipation of the three-level structure IGBT module are solved, and the effect of simplifying installation and improving heat dissipation is achieved.
Patent Information
- Application Number
- CN202323352697.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-08
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2033-12-08
AI Technical Summary
The three-level structure IGBT module layout structure has problems such as inconvenient use, large space occupied, complex wiring and uneven heat dissipation.
The specific IGBT module layout structure and copper bar connection method are adopted to ensure that the wiring is connected nearby, simplify the installation process, avoid wiring errors and insulation problems, and achieve good heat dissipation effect through symmetrical layout and fixed connection of copper bars.
It simplifies the installation process, reduces costs, improves the safety and reliability of equipment replacement, and ensures the correctness of wiring and heat dissipation effect.
Smart Images
Figure CN222147388U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of IGBT devices, in particular to a three-level IGBT module arrangement structure. Background Art
[0002] Each bridge arm of the three-level inverter circuit based on diode clamping is composed of 4 IGBTs and 6 diodes. Compared with the traditional two-level inverter circuit that can only output high and low levels, this novel inverter circuit can output high and low levels by turning on the upper and lower tubes, and output zero level by clamping the middle diode, with a total of three levels, so it is called a three-level inverter circuit. Due to the addition of an output level, the output PWM wave is closer to a sine waveform and has less ripple content. In addition, the switching loss of the IGBT in the three-level inverter circuit is much smaller than that of the two-level one. Not only is the reliability higher, but it can also fully improve its own frequency to achieve high frequency and rapidity.
[0003] However, the three-level IGBT module arrangement structure is expensive and difficult to purchase. Generally, ordinary IGBT modules are used to build a three-level structure, which generally has problems such as occupying a large space, inconvenient wiring, and uneven heat dissipation. Utility Model Content
[0004] In order to solve the problems raised in the above background technology, the purpose of the utility model is to provide a three-level IGBT module arrangement structure, which has the advantage of being convenient for users to use and solves the problem that the three-level IGBT module arrangement structure is inconvenient for users to use.
[0005] The utility model provides the following technical solution: a three-level IGBT module arrangement structure, comprising an IGBT module one, an IGBT module two is arranged on the right side of the IGBT module one, an IGBT module three is arranged on the right side of the IGBT module two, an IGBT module four is arranged on the right side of the IGBT module three, an IGBT module five is arranged on the right side of the IGBT module four, an IGBT module six is arranged on the right side of the IGBT module five, an IGBT module seven is arranged on the right side of the IGBT module six, an IGBT module eight is arranged on the right side of the IGBT module seven, and an IGBT module nine is arranged on the right side of the IGBT module eight.
[0006] The tops of the IGBT modules one and three are fixedly connected with copper bar one, and the bottom of the copper bar one is fixedly connected to the top of the IGBT module two. The tops of the IGBT modules four and six are fixedly connected with copper bar two, and the bottom of the copper bar two is fixedly connected to the top of the IGBT module five. The tops of the IGBT modules seven and nine are fixedly connected with copper bar three, and the bottom of the copper bar three is fixedly connected to the top of the IGBT module eight.
[0007] The beneficial effects of the utility model are as follows:
[0008] 1. The utility model ensures that the wiring is connected nearby without crossover by arranging IGBT module one, IGBT module two, IGBT module three, IGBT module four, IGBT module five, IGBT module six, IGBT module seven, IGBT module eight and IGBT module nine, which not only simplifies the installation process, avoids wiring errors and insulation problems, has a simple and symmetrical layout, good heat dissipation, simplifies the installation process, reduces costs and ensures safe and reliable equipment changes.
[0009] 2. The utility model sets IGBT module 1, IGBT module 2 and IGBT module 3 to form U phase, and Figure 4 Compared with replacing the position of IGBT module 1 and IGBT module 3. The utility model sets IGBT module 4, IGBT module 5 and IGBT module 6 to form a V phase. Figure 4 Compared with the replacement of the position of IGBT module 4 and IGBT module 6. The utility model sets the cooperation of IGBT module 7, IGBT module 8 and IGBT module 9 to form W phase. Figure 4 Compare and replace the positions of IGBT module seven and IGBT module nine. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Figure 1 It is a schematic diagram of the structure of the utility model.
[0011] Figure 2 For this utility model Figure 1 Structure diagram of the copper busbar connecting the IGBT module.
[0012] Figure 3 For this utility model Figure 1 The first traditional arrangement and connection structure diagram of the IGBT module.
[0013] Figure 4 For this utility model Figure 1 The second traditional arrangement connection structure diagram of the IGBT module. DETAILED DESCRIPTION
[0014] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0015] like Figures 1 to 4 As shown, the three-level IGBT module arrangement structure of the present embodiment includes IGBT module one 1, IGBT module two 2 is arranged on the right side of IGBT module one 1, IGBT module three 3 is arranged on the right side of IGBT module two 2, IGBT module four 4 is arranged on the right side of IGBT module three 3, IGBT module five 5 is arranged on the right side of IGBT module four 4, IGBT module five 5 is arranged on the right side of IGBT module six 6, IGBT module seven 7 is arranged on the right side of IGBT module six 6, IGBT module seven 7 is arranged on the right side of IGBT module seven 7, IGBT module eight 8 is arranged on the right side of IGBT module eight 8, and IGBT module nine 9 is arranged on the right side of IGBT module eight 8.
[0016] refer to Figure 1 The current port of IGBT module 1 is electrically connected to the P connection port of IGBT module 2 through the DC bus P and N, and the current port of IGBT module 3 is electrically connected to the N connection port of IGBT module 2 through the DC bus P and N.
[0017] In this embodiment, the IGBT module 1, the IGBT module 2 and the IGBT module 3 are configured to form a U phase. Figure 4 Compare and replace the positions of IGBT module one 1 and IGBT module three 3.
[0018] refer to Figure 1 The current port of IGBT module four 4 is electrically connected to the P connection port of IGBT module five 5 through the DC bus P connection and N connection, and the current port of IGBT module six 6 is electrically connected to the N connection port of IGBT module five 5 through the DC bus P connection and N connection.
[0019] In this embodiment, IGBT module 4, IGBT module 5 and IGBT module 6 are arranged to form a V phase. Figure 4 Compare and replace the positions of IGBT module four 4 and IGBT module six 6.
[0020] refer to Figure 1 The current port of IGBT module seven 7 is electrically connected to the P connection port of IGBT module eight 8 through the DC bus P connection and N connection, and the current port of IGBT module nine 9 is electrically connected to the N connection port of IGBT module eight 8 through the DC bus P connection and N connection.
[0021] In this embodiment, IGBT module seven 7, IGBT module eight 8 and IGBT module nine 9 are arranged to form a W phase. Figure 4 Compare and replace the positions of IGBT module seven 7 and IGBT module nine 9.
[0022] refer to Figure 2 The tops of IGBT module 1 and IGBT module 3 are fixedly connected with copper busbar 10, and the bottom of copper busbar 10 is fixedly connected to the top of IGBT module 2. The tops of IGBT module 4 and IGBT module 6 are fixedly connected with copper busbar 2, and the bottom of copper busbar 2 11 is fixedly connected to the top of IGBT module 5. The tops of IGBT module 7 and IGBT module 9 are fixedly connected with copper busbar 3, and the bottom of copper busbar 3 12 is fixedly connected to the top of IGBT module 8.
[0023] In this embodiment, by setting copper busbar 10, IGBT module 1 and IGBT module 3 can be electrically connected to IGBT module 2 2. By setting copper busbar 11, IGBT module 4 4 and IGBT module 6 6 can be electrically connected to IGBT module 5 5. By setting copper busbar 3 12, IGBT module 7 7 and IGBT module 9 9 can be electrically connected to IGBT module 8 8.
[0024] refer to Figure 2 A copper busbar 13 is provided on the front of the IGBT module 1, and the bottom of the copper busbar 13 is electrically connected to the P warp connection port of the IGBT module 1 and the N warp connection port of the IGBT module 3, the bottom of the copper busbar 13 is electrically connected to the P warp connection port of the IGBT module 4 and the N warp connection port of the IGBT module 6, and the bottom of the copper busbar 13 is electrically connected to the P warp connection port of the IGBT module 7 and the N warp connection port of the IGBT module 9.
[0025] In this embodiment, by providing the copper busbar 13, the IGBT module 1, the IGBT module 3, the IGBT module 4, the IGBT module 6, the IGBT module 7 and the IGBT module 9 can be electrically connected.
[0026] The utility model is a three-phase alternating current of U, V and W formed by the DC bus P and N through IGBT module 1, IGBT module 2, IGBT module 3, IGBT module 4, IGBT module 5, IGBT module 6, IGBT module 7, IGBT module 8 and IGBT module 9, a total of nine IGBT modules, wherein the IGBT module 1, IGBT module 2, IGBT module 3, 3 form the U phase, the IGBT module 4, IGBT module 5, IGBT module 6, IGBT module 6, IGBT module 7, IGBT module 8 and IGBT module 9 form the W phase. The first conventional arrangement connection structure is to arrange the IGBT module 1, IGBT module 2 and IGBT module 3 in an upper and lower structure, such as Figure 3As shown, the directions of IGBT module one 1, IGBT module two 2 and IGBT module three 3 are consistent. This structure occupies a large space, and because the distribution of IGBT modules is different in the up and down lines, this scheme has better heating and heat dissipation effects than the first traditional arrangement and connection structure. The second traditional arrangement and connection structure is to arrange IGBT module one 1, IGBT module two 2, IGBT module three 3, IGBT module four 4, IGBT module five 5, IGBT module six 6, IGBT module seven 7, IGBT module eight 8 and IGBT module nine 9 in a horizontal structure, and the directions of the middle IGBT module two 2, IGBT module five 5, IGBT module eight 8 of each phase are opposite to those of IGBT module one 1, IGBT module three 3, IGBT module four 4, IGBT module six 6, IGBT module seven 7 and IGBT module nine 9, as shown in FIG. Figure 4 As shown, this solution is compared with the second traditional arrangement and connection structure. The second traditional arrangement and connection structure has the problem of wiring crossover, poor wiring, and the need for good insulation treatment.
Claims
1. A three-level IGBT module arrangement structure, Features: The three-level IGBT module arrangement structure comprises an IGBT module one (1), an IGBT module two (2) is arranged on the right side of the IGBT module one (1), an IGBT module three (3) is arranged on the right side of the IGBT module two (2), an IGBT module four (4) is arranged on the right side of the IGBT module three (3), an IGBT module five (5) is arranged on the right side of the IGBT module four (4), an IGBT module six (6) is arranged on the right side of the IGBT module five (5), an IGBT module seven (7) is arranged on the right side of the IGBT module six (6), an IGBT module eight (8) is arranged on the right side of the IGBT module seven (7), and an IGBT module nine (9) is arranged on the right side of the IGBT module eight (8).
2. A three-level IGBT module arrangement structure according to claim 1, Features: The current port of the IGBT module one (1) is electrically connected to the P-connection port of the IGBT module two (2) through the DC bus P-connection and N-connection, and the current port of the IGBT module three (3) is electrically connected to the N-connection port of the IGBT module two (2) through the DC bus P-connection and N-connection.
3. A three-level IGBT module arrangement structure according to claim 2, Features: The current port of the IGBT module four (4) is electrically connected to the P-connection port of the IGBT module five (5) through the DC bus P-connection and N-connection, and the current port of the IGBT module six (6) is electrically connected to the N-connection port of the IGBT module five (5) through the DC bus P-connection and N-connection.
4. A three-level IGBT module arrangement structure according to claim 3, Features: The current port of the IGBT module seven (7) is electrically connected to the P-connection port of the IGBT module eight (8) through the DC bus P-connection and N-connection, and the current port of the IGBT module nine (9) is electrically connected to the N-connection port of the IGBT module eight (8) through the DC bus P-connection and N-connection.
5. A three-level IGBT module arrangement structure according to claim 4, Features: The tops of the IGBT module one (1) and the IGBT module three (3) are both fixedly connected with a copper bar one (10), and the bottom of the copper bar one (10) is fixedly connected to the top of the IGBT module two (2). The tops of the IGBT module four (4) and the IGBT module six (6) are both fixedly connected with a copper bar two (11), and the bottom of the copper bar two (11) is fixedly connected to the top of the IGBT module five (5). The tops of the IGBT module seven (7) and the IGBT module nine (9) are both fixedly connected with a copper bar three (12), and the bottom of the copper bar three (12) is fixedly connected to the top of the IGBT module eight (8).
6. A three-level IGBT module arrangement structure according to claim 5, Features: A copper busbar (13) is provided on the front of the IGBT module one (1), the bottom of the copper busbar (13) is electrically connected to the P connection port of the IGBT module one (1) and the N connection port of the IGBT module three (3), the bottom of the copper busbar (13) is electrically connected to the P connection port of the IGBT module four (4) and the N connection port of the IGBT module six (6), and the bottom of the copper busbar (13) is electrically connected to the P connection port of the IGBT module seven (7) and the N connection port of the IGBT module nine (9).