Radio frequency switch and radio frequency switch module

Abstract

The utility model relates to a radio frequency switch and a radio frequency switch module. The radio frequency switch provided by the embodiment of the utility model comprises a switch stack module coupled between a first signal transmission port and a second signal transmission port; the switch stack module comprises a series module and a parallel module; the series module is connected between the first signal transmission port and the second signal transmission port; the parallel module is connected between the second signal transmission port and the ground end; one of the series connection module and the parallel connection module is disconnected during the conduction period of the other. According to the embodiment of the invention, the linearity and the power capacity of the radio frequency switch are improved.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a radio frequency switch and a radio frequency switch module. Background Art

[0002] At present, RF switching devices, such as multi-port antenna switches, are usually used in the process of transmitting RF signals. However, due to the poor switch isolation of these devices, they often cannot meet the strict linearity requirements in the process of transmitting RF signals. In addition, there is also the problem of insufficient power capacity, which cannot meet the transmission requirements of high-power RF signals. Utility Model Content

[0003] In view of this, embodiments of the present application provide a radio frequency switch and a radio frequency switch module to solve at least one problem existing in the background technology.

[0004] In a first aspect, an embodiment of the present application provides a radio frequency switch, the radio frequency switch comprising a switch stack module coupled between a first signal transmission port and a second signal transmission port;

[0005] The switch stack module includes a series module and a parallel module; the series module is connected between the first signal transmission port and the second signal transmission port; the parallel module is connected between the second signal transmission port and the ground terminal; one of the series module and the parallel module is disconnected during the conduction period of the other.

[0006] In combination with the first aspect, in an optional implementation, the series module and the parallel module both include a switch stack.

[0007] In combination with the first aspect, in an optional implementation manner, the first signal transmission port includes a first input-output port, and the second signal transmission port includes a first output port;

[0008] The RF switch includes a first switch stack module coupled between the first input-output port and the first output port; the first switch stack module includes a first series module and a first parallel module;

[0009] The first series module is connected between the first input / output port and the first output port; the first parallel module is connected between the first output port and the ground; and one of the first series module and the first parallel module is disconnected during the conduction period of the other.

[0010] In combination with the first aspect, in an optional implementation manner, the second signal transmission port further includes a second output port;

[0011] The RF switch further includes a second switch stack module coupled between the first input-output port and the second output port; the second switch stack module includes a second series module and a second parallel module;

[0012] The second series module is connected between the first input / output port and the second output port; the second parallel module is connected between the second output port and the ground; one of the second series module and the second parallel module is disconnected during the conduction period of the other, and when any one of the first switch stack module and the second switch stack module is turned on, the other switch stack modules are disconnected.

[0013] In combination with the first aspect, in an optional implementation manner, the second signal transmission port further includes a first input port;

[0014] The RF switch further includes a third switch stack module coupled between the first input / output port and the first input port; the third switch stack module includes a third series module and a third parallel module;

[0015] The third series module is connected between the first input / output port and the first input port; the third parallel module is connected between the first input port and the ground; one of the third series module and the third parallel module is disconnected during the conduction period of the other, and during the conduction period of any one of the first switch stack module, the second switch stack module and the third switch stack module, the other switch stack modules are disconnected.

[0016] In combination with the first aspect, in an optional implementation manner, the first series module, the second series module and the third series module each include at least two switch stacks connected in parallel.

[0017] In combination with the first aspect, in an optional implementation manner, the first series module and the second series module are respectively two 16-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm;

[0018] The third series module is two 8-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm;

[0019] The first parallel module and the second parallel module are respectively a single 12-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm;

[0020] The third parallel module is a single 16-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm.

[0021] In a second aspect, an embodiment of the present application provides a radio frequency switch module, wherein the radio frequency switch module includes a positive and negative voltage generating circuit, a logic control circuit and the radio frequency switch described above;

[0022] The positive and negative voltage generating circuit is configured to provide a positive bias voltage and a negative bias voltage;

[0023] The logic control circuit is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of the logic control signal, so that the series module and the parallel module in any switch stack module of the RF switch are disconnected during the conduction period of one and the other respectively under the control of the two sets of bias voltages.

[0024] In combination with the second aspect, in an optional implementation manner, the two groups of bias voltages include a first group of bias voltages and a second group of bias voltages;

[0025] The first group of bias voltages includes a series gate bias voltage and a series body bias voltage; the series gate bias voltage is used to provide a gate of an NMOS transistor in the series module, and the series body bias voltage is used to provide a substrate of an NMOS transistor in the series module to control the series module to be turned on or off;

[0026] The second group of bias voltages includes a parallel gate bias voltage and a parallel body bias voltage; the parallel gate bias voltage is used to provide a gate of the NMOS transistor in the parallel module, and the parallel body bias voltage is used to provide a substrate of the NMOS transistor in the parallel module to control the parallel module to be turned on or off.

[0027] In conjunction with the second aspect, in an optional implementation manner, the first group of bias voltages includes a first group bias voltage No. 1, a first group bias voltage No. 2, and a first group bias voltage No. 3;

[0028] The second group of bias voltages includes a first second group of bias voltages, a second second group of bias voltages, and a third second group of bias voltages;

[0029] The first group of bias voltages is used to provide a first series module in the first switch stack module of the radio frequency switch to control the first series module to be turned on or off; the second group of bias voltages is used to provide a first parallel module in the first switch stack module of the radio frequency switch to control the first parallel module to be turned on or off;

[0030] The second first group of bias voltages is used to provide a second series module in the second switch stack module of the RF switch to control the second series module to be turned on or off; the second second group of bias voltages is used to provide a second parallel module in the second switch stack module of the RF switch to control the second parallel module to be turned on or off;

[0031] The first group of bias voltages No. 3 is used to provide a third series module in the third switch stack module of the RF switch to control the third series module to be turned on or off; the second group of bias voltages No. 3 is used to provide a third parallel module in the third switch stack module of the RF switch to control the third parallel module to be turned on or off.

[0032] The technical solution provided by the embodiment of the present application has the following beneficial effects: the RF switch includes a switch stack module, and the switch stack module includes a series module and a parallel module, so that the switch isolation of the RF switch can be improved to meet strict linearity requirements. And the switch stack module can improve the power capacity of the RF switch to meet the transmission requirements of high-power RF signals.

[0033] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below and in part will become apparent from the description below or will be learned through the practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can also be obtained based on these drawings without creative work. These drawings and textual descriptions are not intended to limit the scope of the concept of the present application in any way, but to illustrate the concept of the present application for those skilled in the art by referring to specific embodiments. In the drawings:

[0035] Figure 1 A circuit diagram of a specific example of a switch stack in an embodiment of the present application;

[0036] Figure 2 A schematic diagram of a specific example of a radio frequency switch in an embodiment of the present application;

[0037] Figure 3 A circuit diagram of a specific example of a radio frequency switch in an embodiment of the present application;

[0038] Figure 4 A schematic diagram of a specific example of a radio frequency switch module in an embodiment of the present application;

[0039] Figure 5 This is a principle block diagram of another specific example of the RF switch module in the embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to make the technical solutions and beneficial effects of the embodiments of the present application more obvious and easy to understand, the following is a detailed description by listing specific embodiments. Among them, the drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meaning as those in the technical field to which the embodiments of the present application belong.

[0041] It should be noted that the terms "first", "second", etc. may be used in this article to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. When describing "first", it does not mean that there must be a "second"; and when discussing "second", it does not mean that there must be a "first" in this application. The singular forms of "one", "an" and "said / the" may also be intended to include plural forms, unless the context clearly indicates otherwise. The term "includes" is to determine the existence of the included features, but does not exclude the existence or addition of one or more other features. The term "and / or" includes any and all combinations of the relevant listed items. The term "plurality" means two or more.

[0042] In the present application embodiment, Figure 1 As shown, the switch stack 01 can be mainly composed of multiple switch units 011 connected in series, that is, a transistor stacking method. By connecting multiple switch units 011 in series to form the switch stack 01, the large voltage swing to be carried can be distributed to each stacked switch unit 011, thereby significantly improving the power capacity and linearity.

[0043] As a specific example, the switch unit 011 may include an NMOS transistor (N-type metal oxide semiconductor field effect transistor), a gate bias resistor Rg, a body bias resistor Rb, and a drain-source linearization resistor Rds. The gate G of the NMOS transistor may be connected to the first end of the gate bias resistor Rg, the substrate B of the NMOS transistor may be connected to the first end of the body bias resistor Rb, and the source S and drain D of the NMOS transistor may be connected to each other through the drain-source linearization resistor Rds; the second end of the gate bias resistor Rg may be configured as an input gate bias voltage, and the second end of the body bias resistor Rb may be configured as an input body bias voltage. The source S of the NMOS transistor may be connected to the drain of the NMOS transistor of the previous-stage switch unit or configured to input a radio frequency signal, and the drain D of the NMOS transistor may be connected to the source of the NMOS transistor of the next-stage switch unit or configured to output a radio frequency signal. For example, the NMOS transistor may be Figure 1 The first NMOS transistor M1, the second NMOS transistor M2, the third NMOS transistor M3 or the fourth NMOS transistor M4 shown in FIG. The number of switch units 011 connected in series in the switch stack 01 can be used as the order of the switch stack 01. For example, if 16 NMOS transistors are connected in series in the switch stack 01, it can be called a 16-order switch stack.

[0044] In the embodiment of the present application, an NMOS transistor is used as the switch tube in the switch unit 011. Those skilled in the art should understand that the switch tube in the switch unit 011 may also adopt other controllable semiconductor switching devices, for example, it may include at least one of MOSFET (metal oxide semiconductor field effect transistor, MOS tube for short) and IGBT (insulated gate bipolar transistor) and other devices.

[0045] The embodiment of the present application can isolate the RF signal from the DC signal through the gate bias resistor Rg and the body bias resistor Rb, prevent the RF signal from leaking to the gate equivalent AC ground terminal, and reduce the RF loss; and can improve the voltage carrying capacity of the switch unit 011, such as the voltage carrying capacity can be increased by at least one time when the switch unit 011 is turned off, prevent the drain-gate junction of the NMOS transistor from being broken down too early, thereby improving the power capacity of the switch stack 01. And through the drain-source linearization resistor Rds, the DC potential of the drain and source ends can be stabilized, and the drain and source potential of the FET can be stabilized at the ground potential in the series-parallel switch structure, preventing the switch from generating a significant DC voltage drop in the drain and source during the switching process. The gate bias voltage and the body bias voltage are used to control the NMOS transistor to be turned on or off, thereby controlling the switch stack 01 to be turned on or off.

[0046] In an optional embodiment, the switch stack 01 may further include a gate common resistor Rgc and a body common resistor Rbc. The first end of the gate common resistor Rgc is configured to input a gate bias voltage, and the second end of the gate common resistor Rgc is respectively connected to the second end of the gate bias resistor Rg of each switch unit 011. The first end of the body common resistor Rbc is configured to input a body bias voltage, and the second end of the body common resistor Rbc is respectively connected to the second end of the body bias resistor Rb of each switch unit 011. The embodiment of the present application can further improve the power capacity of the switch stack 01 through the gate common resistor Rgc and the body common resistor Rbc.

[0047] Therefore, based on the current demand for power capacity and linearity of RF switches, the present application embodiment provides a RF switch, which is constructed using the above switch stack 01. Figure 2 As shown, the radio frequency switch 100 includes a switch stack module 10 coupled to a first signal transmission port A1 and a second signal transmission port A2;

[0048] The switch stack module 10 includes a series module 11 and a parallel module 12; the series module 11 is connected between the first signal transmission port A1 and the second signal transmission port A2; the parallel module 12 is connected between the second signal transmission port A2 and the ground terminal; one of the series module 11 and the parallel module 12 is disconnected during the conduction period of the other.

[0049] In the embodiment of the present application, the switch stack 01 is used in the switch stack module 10. For example, at least one of the series module 11 and the parallel module 12 may use the switch stack 01, and the module that does not use the switch stack 01 may use a controllable switch device to achieve controlled conduction or disconnection to achieve controllable transmission of the radio frequency signal. The controllable switch device may include at least one of a BJT (transistor), an SCR (silicon controlled thyristor), a GTO (gate turn-off thyristor), a MOSFET (metal oxide semiconductor field effect transistor, referred to as MOS tube), an IGBT (insulated gate bipolar transistor), an MCT (MOS controlled thyristor) and a SIT (static induction transistor).

[0050] The first signal transmission port A1 may include an input and output port ANT of the RF switch 100; the second signal transmission port A2 may include an input port TX or an output port RX of the RF switch 100. The RF switch 100 may include a plurality of signal transmission ports, and different channels are formed between these signal transmission ports, and the conduction of the switching channels realizes the transmission switching of RF signals. Among these signal transmission ports, there may be one or more input and output ports ANT, and there may also be one or more input ports TX and / or one or more output ports RX. Through these channels, RF signals may be transmitted between the input port TX and the input and output port ANT or between the input and output port ANT and the output port RX. Each channel may be composed of a switch stack module 10. The series module 11 and the parallel module 12 of the switch stack module 10 constitute a switch stack serial-parallel structure. This structure can significantly increase the isolation of the RF switch, while only slightly affecting the insertion loss. For different channels, the switch stack serial-parallel structure may be different to meet the different requirements of each channel.

[0051] One of the series module 11 and the parallel module 12 is disconnected during the conduction period of the other. The parallel module 12 may be turned on when the series module 11 is disconnected, and the series module 11 may be turned on when the parallel module 12 is disconnected. The conduction of the series module 11 enables the transmission of the RF signal between the first signal transmission port A1 and the second signal transmission port A2. At this time, the parallel module 12 is disconnected and will withstand the voltage of the transmitted RF signal. If the transmitted RF signal is a high-power RF signal, it will also withstand a high voltage. Therefore, if the parallel module 12 includes a switch stack 01, the power capacity can be increased and the voltage that can be tolerated can be increased. The disconnection of the series module 11 disconnects the transmission of the RF signal between the first signal transmission port A1 and the second signal transmission port A2. The disconnected series module 11 will also withstand the voltage of the transmitted RF signal. Therefore, if the series module 11 includes a switch stack 01, the power capacity can also be increased and the voltage that can be tolerated can be increased. At this time, the parallel module 12 is turned on, so that the second signal transmission port A2 can be grounded, thereby significantly increasing the isolation of the RF switch and improving the linearity.

[0052] In the embodiment of the present application, the RF switch includes a switch stack module, and the switch stack module includes a series module and a parallel module, so that the switch isolation of the RF switch can be improved to meet strict linearity requirements. And the switch stack module can improve the power capacity of the RF switch to meet the transmission requirements of high-power RF signals.

[0053] In an optional implementation, both the series module 11 and the parallel module 12 include a switch stack 01 .

[0054] In the embodiment of the present application, the number of switch stacks 01 in the series module 11 and the parallel module 12 can be set according to actual needs. Since both the series module 11 and the parallel module 12 include the switch stack 01, the power capacity and linearity of the series module 11 and the parallel module 12 can be respectively improved, thereby improving the power capacity and linearity of the RF switch as a whole. The more switch tubes connected in series in the switch stack 01, that is, the higher the order, the higher the voltage it can withstand and the higher the power capacity. Therefore, in order to increase the power capacity, a higher-order switch stack can be used.

[0055] In an alternative embodiment, if Figure 3 As shown, the first signal transmission port A1 includes a first input-output port ANT1, and the second signal transmission port A2 includes a first output port RX1;

[0056] The RF switch 100 includes a first switch stack module 101 coupled between the first input-output port ANT1 and the first output port RX1; the first switch stack module 101 includes a first series module T1 and a first parallel module S1;

[0057] The first series module T1 is connected between the first input / output port ANT1 and the first output port RX1; the first parallel module S1 is connected between the first output port RX1 and the ground; one of the first series module T1 and the first parallel module S1 is disconnected during the conduction period of the other.

[0058] In an optional implementation, the second signal transmission port A2 further includes a second output port RX2;

[0059] The RF switch 100 further includes a second switch stack module 102 coupled between the first input-output port ANT1 and the second output port RX2; the second switch stack module 102 includes a second series module T2 and a second parallel module S2;

[0060] The second series module T2 is connected between the first input-output port ANT1 and the second output port RX2; the second parallel module S2 is connected between the second output port RX2 and the ground; one of the second series module T2 and the second parallel module S2 is disconnected during the conduction period of the other, and when any switch stack module in the first switch stack module 101 and the second switch stack module 102 is turned on, the other switch stack modules are disconnected.

[0061] In an optional implementation, the second signal transmission port A2 further includes a first input port TX1;

[0062] The RF switch 100 further includes a third switch stack module 103 coupled between the first input / output port ANT1 and the first input port TX1; the third switch stack module 103 includes a third series module T3 and a third parallel module S3;

[0063] The third series module T3 is connected between the first input-output port ANT1 and the first input port TX1; the third parallel module S3 is connected between the first input port TX1 and the ground; one of the third series module T3 and the third parallel module S3 is disconnected during the conduction period of the other, and when any one of the first switch stack module 101, the second switch stack module 102 and the third switch stack module 103 is turned on, the other switch stack modules are disconnected.

[0064] In the embodiment of the present application, the switch stack module may be turned on when its series modules are turned on and its parallel modules are turned off; the switch stack module may be turned off when its series modules are turned off and its parallel modules are turned on.

[0065] For example, if the channel between the first input / output port ANT1 and the first input port TX1 is turned on, the third switch stack module 103 is turned on, and the first switch stack module 101 and the second switch stack module 102 are turned off. In other words, the third series module T3, the first parallel module S1 and the second parallel module S2 are turned on, and the third parallel module S3, the first series module T1 and the second series module T2 are turned off.

[0066] If the channel between the first input / output port ANT1 and the second output port RX2 is turned on, the second switch stack module 102 is turned on, and the first switch stack module 101 and the third switch stack module 103 are turned off. In other words, the second series module T2, the first parallel module S1 and the third parallel module S3 are turned on, and the second parallel module S2, the first series module T1 and the third series module T3 are turned off.

[0067] If the channel between the first input / output port ANT1 and the first output port RX1 is turned on, the first switch stack module 101 is turned on, and the second switch stack module 102 and the third switch stack module 103 are turned off. In other words, the first series module T1, the second parallel module S2 and the third parallel module S3 are turned on, and the first parallel module S1, the second series module T2 and the third series module T3 are turned off.

[0068] In an optional implementation, the first series module T1 , the second series module T2 , and the third series module T3 each include at least two switch stacks connected in parallel.

[0069] In the embodiment of the present application, although the on-resistance can be reduced by increasing the width of the conductive channel in the NMOS transistor to reduce the insertion loss, if the conductive channel of a single NMOS transistor is too wide, a voltage drop will also occur on its gate terminal, which is also undesirable. Therefore, by connecting multiple switch stacks in parallel, the total width can be increased, the insertion loss can be effectively reduced, and the defects caused by the excessive width of the conductive channel of a single NMOS transistor can be overcome.

[0070] In the embodiment of the present application, the channel with the input port TX can be a TX channel, and the channel with the output port RX can be an RX channel. The switch stack modules in the TX channel and the RX channel have the advantages of high power capacity and high linearity; wherein, the TX channel needs to withstand relatively higher power, while the RX channel has relatively small requirements for the withstand power, but requires lower insertion loss. For example, when the third series module T3 of the TX channel passes a high-power RF signal, the first series module T1, the second series module T2 and the third parallel module S3 that are turned off will be subjected to high voltage at both ends, so the first series module T1, the second series module T2 and the third parallel module S3 require switch stacks of more orders relative to other modules. For another example, in order to reduce insertion loss, the first series module T1, the second series module T2 or the third series module T3 can adopt a parallel switch stack. Therefore, the number and connection mode of the switch stacks in the first series module T1, the second series module T2 and the third series module T3 can be set according to actual needs. For example, each can include a switch stack or more than two switch stacks connected in parallel. For example, the first series module T1, the second series module T2 and the third series module T3 may each have two or more switch stacks connected in parallel. In addition, the first parallel module S1, the second parallel module S2 and the third parallel module S3 may each include one switch stack or two or more switch stacks connected in parallel, which may be set according to actual needs.

[0071] To this end, as a specific example, the first series module T1 and the second series module T2 are two 16-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm;

[0072] The third series module T3 is two 8-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm;

[0073] The first parallel module S1 and the second parallel module S2 are respectively a single 12-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm;

[0074] The third parallel module S3 is a single 16-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm.

[0075] In the embodiment of the present application, the width of the conductive channel of the NMOS transistor is the width in its width-to-length ratio. The first series module T1 and the second series module T2 are respectively two 16-stage switch stacks with a width of 1.5mm connected in parallel, and the total width is 3mm; and the third series module T3 is two 8-stage switch stacks with a width of 1.5mm connected in parallel, and the total width is 3mm, thereby reducing the insertion loss. The first series module T1, the second series module T2 and the third parallel module S3 are respectively 16-stage switch stacks, which have the ability to withstand higher power. When the TX channel needs to transmit high-power RF signals, it can ensure the safe and stable operation of the RF switch.

[0076] The present application also provides a radio frequency switch module, such as Figure 4 As shown, the RF switch module includes a positive and negative voltage generating circuit 200, a logic control circuit 300 and the above-mentioned RF switch 100;

[0077] The positive and negative voltage generating circuit 200 is configured to provide a positive bias voltage and a negative bias voltage;

[0078] The logic control circuit 300 is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of the logic control signal, so that the series module 11 and the parallel module 12 in the switch stack module 10 of the RF switch 100 are disconnected during the conduction period of the other under the control of the two sets of bias voltages.

[0079] In an embodiment of the present application, the positive bias voltage and negative bias voltage provided by the positive and negative voltage generating circuit 200 can be set according to actual needs. For example, the positive bias voltage can be 2.5V, and the negative bias voltage can be -2.5V. The logic control circuit 300 can be set according to actual needs. For example, a circuit mainly composed of logic gates can switch and output different bias voltage combinations using positive bias voltage and negative bias voltage under the control of a logic control signal. In an embodiment of the present application, the bias voltage output by the logic control circuit is controlled by a logic control signal to control the switch stack module to be turned on or off, thereby enabling the switching of the conduction path of the RF switch to be realized, and the controlled transmission of the signal is realized. And through the switch stack module of the RF switch, the power capacity and linearity of the RF switch are also improved.

[0080] In an optional embodiment, the two groups of bias voltages include a first group of bias voltages and a second group of bias voltages;

[0081] The first group of bias voltages includes a series gate bias voltage Vgth and a series body bias voltage Vbth; the series gate bias voltage Vgth is used to provide a gate of the NMOS transistor in the series module 11, and the series body bias voltage Vbth is used to provide a substrate of the NMOS transistor in the series module 11 to control the series module 11 to be turned on or off;

[0082] The second group of bias voltages includes a parallel gate bias voltage Vgsh and a parallel body bias voltage Vbsh; the parallel gate bias voltage Vgsh is used to provide to the gate of the NMOS transistor in the parallel module 12, and the parallel body bias voltage Vbsh is used to provide to the substrate of the NMOS transistor in the parallel module 12 to control the parallel module 12 to be turned on or off.

[0083] In the embodiment of the present application, the first bias voltage group and the second bias voltage group of the two bias voltage groups may both include a gate bias voltage and a body bias voltage. The series gate bias voltage Vgth and the series body bias voltage Vbth of the first bias voltage group may control the series module 11 to be turned on or off, and the parallel gate bias voltage Vgsh and the parallel body bias voltage Vbsh of the second bias voltage group may control the parallel module 12 to be turned on or off, so that the series module 11 and the parallel module 12 may be turned off during the conduction period of the other under the control of the two bias voltage groups.

[0084] Either one of the series module 11 and the parallel module 12 may use a switch stack, or both may use a switch stack. For example, either one of the two may use a single switch unit, and the other may use a switch stack. When the series gate bias voltage Vgth and the series body region bias voltage Vbth are 2.5V and 0V, respectively, the series module 11 is controlled to be turned on; when both are -2.5V, the series module 11 is controlled to be turned off. Similarly, when the parallel gate bias voltage Vgsh and the parallel body region bias voltage Vbsh are 2.5V and 0V, respectively, the parallel module 12 is controlled to be turned on; when both are -2.5V, the parallel module 12 is controlled to be turned off. If the series module 11 or the parallel module 12 includes at least two switch stacks connected in parallel, controlling the series module 11 or the parallel module 12 to be turned on may be controlling all the parallel switch stacks included therein to be turned on, and controlling the series module 11 or the parallel module 12 to be turned off may be controlling all the parallel switch stacks included therein to be turned off.

[0085] As a specific example, the first group of bias voltages includes a first group of bias voltage No. 1, a first group of bias voltage No. 2, and a first group of bias voltage No. 3;

[0086] The second group of bias voltages includes a first second group of bias voltages, a second second group of bias voltages, and a third second group of bias voltages;

[0087] The first group bias voltage is used to provide the first series module T1 in the first switch stack module 101 of the RF switch 100 to control the first series module T1 to be turned on or off; the second group bias voltage is used to provide the first parallel module S1 in the first switch stack module 101 of the RF switch 100 to control the first parallel module S1 to be turned on or off;

[0088] The first group of bias voltages No. 2 is used to provide the second series module T2 in the second switch stack module 102 of the RF switch 100 to control the second series module T2 to be turned on or off; the second group of bias voltages No. 2 is used to provide the second parallel module S2 in the second switch stack module 102 of the RF switch 100 to control the second parallel module S2 to be turned on or off;

[0089] The first group of bias voltages No. 3 is used to provide the third series module T3 in the third switch stack module 103 of the RF switch 100 to control the third series module T3 to be turned on or off; the second group of bias voltages No. 3 is used to provide the third parallel module S3 in the third switch stack module 103 of the RF switch 100 to control the third parallel module S3 to be turned on or off.

[0090] In the present application embodiment, Figure 5 As shown, the positive and negative voltage generating circuit 200 can generate and output a positive bias voltage Vpos and a negative bias voltage Vneg using an external power supply voltage VDD. The logic control signal may include a first control signal D <0> and the second control signal D <1> The logic control circuit can be based on the first control signal D <0> and the second control signal D <1> The first bias voltage (Vgth) of the output No. <1> 、Vbth <1> ), the first group bias voltage (Vgth <2> 、Vbth <2> ), the first group bias voltage of No. 3 (Vgth <3> 、Vbth <3> ), the second group bias voltage (Vgsh <1> 、Vbsh <1> ), the second bias voltage of the second group (Vgsh <2> 、Vbsh <2> ) and the second bias voltage of group 3 (Vgsh <3> 、Vbsh <3> ). The first control signal D <0> and the second control signal D <1> The voltage level can be +2.5V / 0V.

[0091] For example, if the channel between the first input / output port ANT1 and the first input port TX1 is turned on, the first bias voltage (Vgth <3> 、Vbth <3> ), the second group bias voltage (Vgsh <1> 、Vbsh <1> ) and the second bias voltage (Vgsh <2> 、Vbsh <2> ) can be (2.5V, 0V) respectively, so as to control the third series module T3, the first parallel module S1 and the second parallel module S2 to be turned on; and the third second group bias voltage (Vgsh <3> 、Vbsh <3> ), the first group bias voltage (Vgth <1> 、Vbth <1> ) and the first bias voltage of group II (Vgth <2> 、Vbth <2> ) can be (-2.5V, -2.5V) respectively, so as to control the third parallel module S3, the first series module T1 and the second series module T2 to be disconnected.

[0092] If the channel between the first input-output port ANT1 and the second output port RX2 is turned on, the first bias voltage (Vgth <2> 、Vbth <2> ), the second group bias voltage (Vgsh <1> 、Vbsh <1> ) and the second bias voltage of group 3 (Vgsh <3> 、Vbsh <3> ) can be (2.5V, 0V) respectively, so as to control the second series module T2, the first parallel module S1 and the third parallel module S3 to be turned on; and the second bias voltage (Vgsh <2> 、Vbsh <2> ), the first group bias voltage (Vgth <1> 、Vbth <1> ) and the first bias voltage of group 3 (Vgth <3> 、Vbth <3> ) can be (-2.5V, -2.5V) respectively, so as to control the second parallel module S2, the first series module T1 and the third series module T3 to be disconnected.

[0093] If the channel between the first input-output port ANT1 and the first output port RX1 is turned on, the first bias voltage (Vgth <1> 、Vbth <1> ), the second bias voltage of the second group (Vgsh <2> 、Vbsh <2> ) and the second bias voltage of group 3 (Vgsh <3> 、Vbsh <3> ) can be (2.5V, 0V) respectively, so as to control the first series module T1, the second parallel module S2 and the third parallel module S3 to be turned on; and the first second group bias voltage (Vgsh <1> 、Vbsh <1> ), the first group bias voltage (Vgth <2> 、Vbth <2> ) and the first bias voltage of group 3 (Vgth <3> 、Vbth <3> ) can be (-2.5V, -2.5V) respectively, so as to control the first parallel module S1, the second series module T2 and the third series module T3 to be disconnected.

[0094] The embodiment of the present application can form a single-pole three-throw circuit (SP3T) through a positive and negative voltage generating circuit, a logic control circuit and a radio frequency switch, thereby providing a high-power asymmetric single-pole three-throw switch and improving the power capacity and linearity of the radio frequency switch.

[0095] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present application and do not limit the scope of protection of the patent of this application.

Claims

1. A radio frequency switch, characterized in that: The radio frequency switch includes a switch stack module coupled between the first signal transmission port and the second signal transmission port; The switch stack module includes a series module and a parallel module; the series module is connected between the first signal transmission port and the second signal transmission port; the parallel module is connected between the second signal transmission port and the ground terminal; one of the series module and the parallel module is disconnected during the conduction period of the other.

2. The radio frequency switch according to claim 1, characterized in that: The series module and the parallel module each include a switch stack.

3. The radio frequency switch according to claim 1 or 2, characterized in that: The first signal transmission port includes a first input-output port, and the second signal transmission port includes a first output port; The RF switch includes a first switch stack module coupled between the first input-output port and the first output port; The first switch stack module includes a first series module and a first parallel module; The first series module is connected between the first input / output port and the first output port; the first parallel module is connected between the first output port and the ground; and one of the first series module and the first parallel module is disconnected during the conduction period of the other.

4. The radio frequency switch according to claim 3, characterized in that: The second signal transmission port also includes a second output port; The RF switch further includes a second switch stack module coupled between the first input-output port and the second output port; The second switch stack module includes a second series module and a second parallel module; The second series module is connected between the first input / output port and the second output port; the second parallel module is connected between the second output port and the ground; one of the second series module and the second parallel module is disconnected during the conduction period of the other, and when any one of the first switch stack module and the second switch stack module is turned on, the other switch stack modules are disconnected.

5. The radio frequency switch according to claim 4, characterized in that: The second signal transmission port also includes a first input port; The RF switch further includes a third switch stack module coupled between the first input-output port and the first input port; The third switch stack module includes a third series module and a third parallel module; The third series module is connected between the first input / output port and the first input port; the third parallel module is connected between the first input port and the ground; one of the third series module and the third parallel module is disconnected during the conduction period of the other, and during the conduction period of any one of the first switch stack module, the second switch stack module and the third switch stack module, the other switch stack modules are disconnected.

6. The radio frequency switch according to claim 5, characterized in that: The first series module, the second series module, and the third series module each include at least two switch stacks connected in parallel.

7. The radio frequency switch according to claim 6, characterized in that: The first series module and the second series module are respectively two 16-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm; The third series module is two 8-stage switch stacks connected in parallel, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1.5 mm; The first parallel module and the second parallel module are respectively a single 12-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm; The third parallel module is a single 16-stage switch stack, wherein the width of the conductive channel of each NMOS transistor in the switch stack is 1 mm.

8. A radio frequency switch module, characterized in that: The radio frequency switch module comprises a positive and negative voltage generating circuit, a logic control circuit and a radio frequency switch according to any one of claims 1 to 7; The positive and negative voltage generating circuit is configured to provide a positive bias voltage and a negative bias voltage; The logic control circuit is configured to determine and output two sets of bias voltages according to the positive bias voltage and the negative bias voltage under the control of the logic control signal, so that the series module and the parallel module in any switch stack module of the RF switch are disconnected during the conduction period of one and the other respectively under the control of the two sets of bias voltages.

9. The radio frequency switch module according to claim 8, characterized in that: The two groups of bias voltages include a first group of bias voltages and a second group of bias voltages; The first group of bias voltages includes a series gate bias voltage and a series body bias voltage; the series gate bias voltage is used to provide a gate of an NMOS transistor in the series module, and the series body bias voltage is used to provide a substrate of an NMOS transistor in the series module to control the series module to be turned on or off; The second group of bias voltages includes a parallel gate bias voltage and a parallel body bias voltage; the parallel gate bias voltage is used to provide a gate of the NMOS transistor in the parallel module, and the parallel body bias voltage is used to provide a substrate of the NMOS transistor in the parallel module to control the parallel module to be turned on or off.

10. The radio frequency switch module according to claim 8, characterized in that: The first group of bias voltages includes a first group of bias voltage No. 1, a first group of bias voltage No. 2, and a first group of bias voltage No. 3; The second group of bias voltages includes a first second group of bias voltages, a second second group of bias voltages, and a third second group of bias voltages; The first group of bias voltages is used to provide a first series module in the first switch stack module of the radio frequency switch to control the first series module to be turned on or off; the second group of bias voltages is used to provide a first parallel module in the first switch stack module of the radio frequency switch to control the first parallel module to be turned on or off; The second first group of bias voltages is used to provide a second series module in the second switch stack module of the RF switch to control the second series module to be turned on or off; the second second group of bias voltages is used to provide a second parallel module in the second switch stack module of the RF switch to control the second parallel module to be turned on or off; The first group of bias voltages No. 3 is used to provide a third series module in the third switch stack module of the RF switch to control the third series module to be turned on or off; the second group of bias voltages No. 3 is used to provide a third parallel module in the third switch stack module of the RF switch to control the third parallel module to be turned on or off.

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