Strip-shaped electron beam multichannel staggered double-gate traveling wave amplifier

Abstract

The invention discloses a multi-channel staggered double-gate slow-wave structure traveling wave amplifier, which is characterized in that a plurality of staggered double-gate slow-wave structures with electromagnetic wave input structures and electromagnetic wave output structures which are opposite left and right are stacked together, and are connected together in the width direction of a strip-shaped electron beam channel to form a unified electron beam channel. Therefore, compared with an existing traveling wave tube with a microstrip line multi-channel slow-wave structure, the traveling wave amplifier adopts the staggered double-gate slow-wave structure, and the power of the traveling wave amplifier is greatly improved. Meanwhile, the device is of an all-metal structure, higher power capacity is achieved, electron beam channels are wider in the transverse direction, space charge force can be effectively reduced, the electron beam circulation rate is higher, strip-shaped electron beams of the two channels can be focused through a unified period permanent magnet, and cost is reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of vacuum electronic devices, and more specifically, relates to a strip electron beam multi-channel interleaved double-gate traveling wave amplifier. Background Art

[0002] Vacuum electronic devices refer to devices that convert electron kinetic energy or potential energy into electromagnetic wave energy by virtue of the interaction between electrons and electromagnetic fields in a vacuum. According to the different electron beam operation modes and energy conversion modes, they can be divided into: linear injection vacuum electronic devices, orthogonal field vacuum electronic devices and cyclotron vacuum electronic devices. Klystrons, traveling wave tubes and backward wave tubes belong to linear injection vacuum electronic devices. They use the electron beam emitted by the electron gun to form electron clusters, and lose energy in the deceleration field. The electron kinetic energy is converted into electromagnetic wave energy, thereby forming an amplified or oscillating electromagnetic wave output. Since the electron beam is linear, it is called a linear injection vacuum electronic device. In this type of device, the electron injection kinetic energy is converted into electromagnetic wave energy. Magnetrons and orthogonal field amplifiers belong to orthogonal field vacuum electronic devices. Electrons are emitted from the central cathode outward. Under the action of the magnetic field, they rotate. The rotating electrons interact with the high-frequency structure to generate electromagnetic waves. Since this type of device moves under the action of the electric field and the perpendicular magnetic field, it is called an orthogonal field vacuum electronic device. They convert the potential energy of electrons into electromagnetic wave energy. Devices such as gyroklystrons and gyrotron traveling wave tubes use the conversion of electron angular kinetic energy into electromagnetic wave energy. The electrons move forward in a spiral, so they are called cyclotron vacuum electronic devices.

[0003] The linear beam traveling wave amplifier is the most widely used vacuum device. It has the advantages of high output power, wide operating frequency band and long service life. It is widely used in various aircraft, ships and satellites and is an indispensable key component. According to the shape of the electron beam, it can be divided into cylindrical electron beam and ribbon electron beam devices.

[0004] Existing vacuum amplifiers such as linear traveling wave tubes and klystrons generally have only one signal transmission amplification channel per device. However, as the amount of transmitted data increases, the amplifier bandwidth is required to be widened; or as the need for confrontation increases, the amplifier is required to have a higher output power. Whether it is bandwidth widening or power increase, sometimes it is not possible for a single vacuum amplifier to achieve or meet the demand.

[0005] In the two Chinese invention patents authorized and announced on April 18, 2023, with announcement number CN114530358B and name “A coaxial single electron beam multi-channel helical traveling wave tube” and announcement number CN114530359B and name “A coaxial multi-channel suspended microstrip line slow-wave structure traveling wave tube”, a circular electron beam is located at the center of the slow-wave structure, and the slow-wave structure used is a microstrip line slow-wave structure, which is only suitable for low-power amplifiers.

[0006] In the Chinese invention entitled “A planar multi-channel slow-wave structure” with announcement number CN108470665B and authorization announcement dated January 17, 2020, a strip electron beam is used to sweep across a planar slow-wave structure. The core of the structure is still a folded microstrip line slow-wave structure, which has low power bearing capacity and the medium is susceptible to electron bombardment. Summary of the invention

[0007] The purpose of the present invention is to overcome the shortcomings of the prior art and to provide a strip electron beam multi-channel interleaved dual-gate traveling wave amplifier to further improve the power of the traveling wave amplifier.

[0008] To achieve the above-mentioned purpose, the strip electron beam multi-channel interleaved dual-gate traveling wave amplifier of the present invention is characterized by comprising:

[0009] Multiple staggered double-grid slow-wave structures, whose electromagnetic wave input and output structures are E-plane unidirectional bending, that is, waveguide wide side bending, each electromagnetic wave input structure and output structure are respectively located on the left and right sides of the strip electron injection wide side; multiple staggered double-grid slow-wave structures are aligned at the upper and lower center positions and arranged side by side, the electron injection channels of the leftmost and rightmost staggered double-grid slow-wave structures are slit toward the left and right middle positions, and the electron injection channels of the staggered double-grid slow-wave structure located in the middle position are slit toward the left and right, thereby connecting the strip electron injection channels in the width direction to form a unified electron injection channel; the electromagnetic wave input structures of multiple staggered double-grid slow-wave structures are all located in the z direction The front end of the transmission direction is the electromagnetic wave input structure of the staggered double-gate slow-wave structure on the far right, which is located at the front end in the z direction, and then distributed backward in sequence. Correspondingly, the electromagnetic wave output structures of multiple staggered double-gate slow-wave structures are all located at the rear end in the z direction, which is the transmission direction. The electromagnetic wave output structure of the staggered double-gate slow-wave structure on the far left is located at the rear end in the z direction, and then distributed forward in sequence. The electromagnetic wave input structure and output structure of each staggered double-gate slow-wave structure are independent input and output ports. The waveguide in the staggered double-gate slow-wave structure is a flat waveguide, and the electromagnetic wave input structure and output structure gradually change from the inside to the outside to the standard waveguide and are connected to the external input and output ports.

[0010] The strip electron beam cathode is located at the front end in the z direction, i.e., the transmission direction. The strip electron beam emitted by it enters the unified electron beam channel along the z direction, exchanges energy with the electromagnetic waves input by multiple staggered double-grid slow-wave structures, and amplifies the electromagnetic waves before outputting them.

[0011] The collector is located at the end in the z direction and is used to collect electrons output from the band electron beam at the end of the unified electron beam channel after energy exchange.

[0012] The object of the present invention is achieved in this way.

[0013] The strip electron beam multi-channel staggered double-grid traveling wave amplifier of the present invention stacks a plurality of electromagnetic wave input structures and staggered double-grid slow-wave structures with opposite left and right output structures, and connects them together in the width direction of the strip electron beam channel to form a unified electron beam channel. In this way, compared with the existing microstrip line multi-channel slow-wave structure traveling wave tube, the present invention adopts a staggered double-grid slow-wave structure, and the power of the traveling wave amplifier is greatly improved. At the same time, the present invention is an all-metal structure with higher power capacity, the electron beam channel is wider in the transverse direction, the space charge force can be effectively reduced, the electron beam flow rate is higher, and the strip electron beams of the two channels can adopt a unified periodic permanent magnet focusing, which reduces the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the vacuum model structure of the existing staggered double-grid slow-wave structure;

[0015] Figure 2 yes Figure 1 The actual processing cross-section diagram corresponding to the staggered double-gate slow-wave structure shown;

[0016] Figure 3 It is a schematic diagram of the vacuum model structure of a specific implementation of the strip electron beam multi-channel interleaved dual-gate traveling wave amplifier of the present invention;

[0017] Figure 4 It is a schematic diagram of the vacuum model structure of another specific implementation of the strip electron beam multi-channel interleaved dual-gate traveling wave amplifier of the present invention. DETAILED DESCRIPTION

[0018] The specific implementation of the present invention is described below in conjunction with the accompanying drawings so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when the detailed description of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.

[0019] Figure 1 , 2 They are respectively a schematic diagram of the vacuum model structure of the existing staggered double-gate slow-wave structure and a cross-sectional diagram of the actual processing.

[0020] like Figure 1 , 2 As shown, the existing staggered double-gate slow-wave structure is to insert metal blades in a staggered manner up and down in the metal electromagnetic waveguide, that is, the wide side of the waveguide is inserted, also known as the E-plane insertion, so that the electromagnetic wave bends forward, the transmission path increases, and the speed is reduced relative to the electron beam running in the z direction, which is a slow electromagnetic wave. When the electromagnetic wave and the electron beam have similar speeds along the z direction, the electromagnetic wave and the electron beam exchange energy, thereby reducing the kinetic energy of the electrons and amplifying the electromagnetic wave.

[0021] like Figure 1 ,2 As shown, the middle slow wave part is an interlaced double-grid structure with an electron injection channel in the center and electromagnetic wave input and output structures at the front and back ends. There is a groove in the center of the input and output structure waveguide to form a ridge waveguide bend, and a waveguide bend without a ridge can also be used.

[0022] Figure 3 It is a schematic diagram of the vacuum model structure of a specific implementation of the strip electron beam multi-channel interleaved dual-gate traveling wave amplifier of the present invention.

[0023] In this embodiment, if Figure 3 As shown, the strip electron beam multi-channel interleaved dual-gate traveling wave amplifier of the present invention comprises: three interleaved dual-gate slow-wave structures 1, 2, 3, a strip electron beam cathode and a collector (which is the prior art, and the focus of the present invention is the high-frequency structure for energy exchange between electromagnetic waves and electron beams, therefore, the strip electron beam cathode and collector are not drawn).

[0024] The electromagnetic wave input structure 101, 201, 301 and the output structure 102, 202, 302 of each staggered double-gate slow-wave structure 1, 2, 3 are respectively located on the left and right sides of the wide side of the strip electron injection 4, and the upper and lower center positions of the staggered double-gate slow-wave structures 1, 2, 3 are aligned and arranged side by side. The electron injection channels of the leftmost and rightmost staggered double-gate slow-wave structures 1 and 3 are slit toward the left and right middle positions, and the electron injection channel of the stacked waveguide slow-wave structure 2 located in the middle position is slit toward the left and right, thereby connecting the strip electron injection channels in the width direction to form a unified electron injection channel 5.

[0025] The electromagnetic wave input structures 101, 201, and 301 of the three staggered double-gate slow-wave structures 1, 2, and 3 are all located at the front end in the z direction, i.e., the transmission direction. The electromagnetic wave input structure 301 of the rightmost staggered double-gate slow-wave structure 3 is located at the front end in the z direction, and then distributed backward in sequence. Correspondingly, the electromagnetic wave output structures 102, 202, and 302 of the three staggered double-gate slow-wave structures 1, 2, and 3 are all located at the rear end in the z direction, i.e., the transmission direction. The electromagnetic wave output structure 301 of the leftmost staggered double-gate slow-wave structure 1 is located at the front end in the z direction. Structure 302 is located at the rear end in the z direction and is then distributed forward in sequence; the electromagnetic wave input structure 101, 201, 301 and the output structure 102, 202, 302 of each staggered double-gate slow-wave structure 1, 2, 3 are independent input and output ports; the waveguides in the staggered double-gate slow-wave structures 1, 2, 3 are flat waveguides, and the electromagnetic wave input structures 101, 201, 301 and the output structures 102, 202, 302 gradually change from the inside to the outside to the standard waveguides and are connected to the external input and output ports.

[0026] In this way, since the staggered double-gate slow-wave structures are staggered up and down, each staggered double-gate slow-wave structure has independent input and output ports, but some slow-wave structures have long input distances and short output distances, while other slow-wave structures have short input distances but long output distances.

[0027] The strip electron beam cathode is located at the front end in the z direction, i.e., the transmission direction. The strip electron beam 5 emitted by it enters the unified electron beam channel 5 along the z direction, exchanges energy with the electromagnetic waves input by the two staggered double-gate slow-wave structures 1 and 2, and amplifies the electromagnetic waves before outputting them.

[0028] The collecting electrode is located at the end in the z direction, and is used to collect electrons output from the strip electron injection 5 from the end of the unified electron injection channel 5 after energy exchange.

[0029] During operation, each staggered double-gate slow-wave structure 1, 2, 3 only interacts with the electron beam flowing through it, that is, partial current interaction. Since the slit in the center of the waveguide wide side will not cause electromagnetic wave leakage, any folded waveguide will not interfere with other folded waveguides, that is, any channel is amplified independently without interference, and communication between each channel can be achieved.

[0030] The present invention combines multiple conventional staggered double-gate slow-wave structures together, and the electron injection channels are connected, that is, the center is slit, to form a unified electron injection channel that runs through the entire slow-wave structure. The input and output structures are staggered front and back, and at this time, multiple input structures are on one side of the overall structure, and multiple output structures are on the other side. With a suitable electron gun and collector, the multi-channel staggered double-gate traveling wave amplifier of the present invention can be obtained.

[0031] In actual application, depending on the design, the slow-wave structure can be made of metal materials or alloy materials such as oxygen-free copper, stainless steel, and tungsten.

[0032] In the present invention, each staggered double-gate slow-wave structure adopts the same structural parameters, parallel or cascaded, or adopts different structural parameters. The staggered double-gate slow-wave structures belong to different bands, that is, staggered double-gate slow-wave structures of different frequency bands. The signal is simultaneously input into multiple staggered double-gate slow-wave structures for amplification.

[0033] In this embodiment, the present invention adopts three identical Ka-band staggered double-grid structures, respectively using three strip electron beams to input a unified electron beam channel, the electron beam cross section is 0.5mm*1.2mm, and the three-way signal operates in the same frequency band, that is, three staggered double-grid slow-wave structures 1, 2, and 3, except that the electromagnetic wave input structures 101, 201, and 301 and the output structures 102, 202, and 302 are different in length, and the rest of the structures are exactly the same, and the structural parameters are the same. Figure 1The same, so the channel-interleaved dual-gate slow-wave structure traveling wave amplifier of the present invention can realize simultaneous amplification output of three channels, that is, Ka-band parallel high-power output, thereby increasing the amount of communication data; it can also realize high-gain amplification by connecting three channels in series, thereby realizing Ka-band cascade high-gain output.

[0034] Figure 4 It is a schematic diagram of the vacuum model structure of another specific implementation of the multi-channel staggered dual-gate slow-wave structure traveling wave amplifier of the present invention.

[0035] In this embodiment, the multi-channel staggered double-gate slow-wave structure traveling wave amplifier of the present invention is composed of two groups of staggered double-gate slow-wave structures with different frequency bands, that is, four staggered double-gate slow-wave structures are divided into two groups, each with two channels, and one group of structural parameters and Figure 1 The other group works in the Q band, and together they form a unified amplifier. Therefore, the present invention can simultaneously realize Ka-band and Q-band amplification, and has a wide working bandwidth.

[0036] Compared with the conventional existing staggered double-gate slow-wave structure traveling wave amplifier, the present invention has the following advantages: 1) it can realize multi-channel signal amplification at the same time, and the communication transmission data volume is doubled; 2) staggered double-gate structures of different frequency bands can be used to realize bandwidth expansion; 3) staggered double-gate structures of the same frequency band can be connected in series, that is, the output of a single tube is used as the input of another one, thereby doubling the gain; 4) staggered double-gate structures of the same frequency band can also be used to connect multiple channels in parallel, that is, the amplified signal power is synthesized and output, thereby doubling the output power.

[0037] Compared with the existing multi-channel slow-wave structure, the present invention adopts an all-metal structure and has a higher power capacity; the electron beam channel is wider laterally, which can effectively reduce the space charge force and the electron beam flow rate is higher; 7) The strip electron beam can adopt a unified periodic permanent magnet focusing. Secondly, the conventional traveling wave tube is generally composed of an electron gun, a slow-wave structure, a collector, a magnetic focusing system and a titanium pump. The slow-wave structure proposed in the present invention has multiple channels for amplifying electromagnetic waves, and the other electron guns, collectors, magnetic focusing systems and titanium pumps are all one, which also reduces the production cost.

[0038] Although the above describes the illustrative specific embodiments of the present invention to facilitate those skilled in the art to understand the present invention, it should be clear that the present invention is not limited to the scope of the specific embodiments. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations using the concept of the present invention are protected.

Claims

1. A strip electron beam multi-channel interleaved dual-gate traveling wave amplifier, characterized in that: include: Multiple staggered double-grid slow-wave structures, whose electromagnetic wave input and output structures are E-surface unidirectional bending, that is, waveguide wide side bending, and each electromagnetic wave input structure and output structure are respectively located on the left and right sides of the strip electron injection wide side; multiple staggered double-grid slow-wave structures are aligned at the upper and lower center positions and arranged side by side, the electron injection channels of the leftmost and rightmost staggered double-grid slow-wave structures are slit toward the left and right middle positions, and the electron injection channels of the staggered double-grid slow-wave structures located in the middle position are slit toward the left and right, thereby connecting the strip electron injection channels in the width direction to form a unified electron injection channel; The electromagnetic wave input structures of multiple staggered double-gate slow-wave structures are all located at the front end in the z direction, i.e., the transmission direction. The electromagnetic wave input structure of the rightmost staggered double-gate slow-wave structure is located at the front end in the z direction, and then distributed backward in sequence. Correspondingly, the electromagnetic wave output structures of multiple staggered double-gate slow-wave structures are all located at the rear end in the z direction, i.e., the transmission direction. The electromagnetic wave output structure of the leftmost staggered double-gate slow-wave structure is located at the rear end in the z direction, and then distributed forward in sequence. The electromagnetic wave input structure and output structure of each staggered double-gate slow-wave structure are independent input and output ports. The waveguide in the staggered double-gate slow-wave structure is a flat waveguide, and the electromagnetic wave input structure and output structure gradually change from the inside to the outside to a standard waveguide and are connected to the external input and output ports. The strip electron beam cathode is located at the front end in the z direction, i.e., the transmission direction. The strip electron beam emitted by it enters the unified electron beam channel along the z direction, exchanges energy with the electromagnetic waves input by multiple staggered double-grid slow-wave structures, and amplifies the electromagnetic waves before outputting them. The collector is located at the end in the z direction and is used to collect electrons output from the band electron beam at the end of the unified electron beam channel after energy exchange.

2. The strip electron beam multi-channel interleaved dual-gate traveling wave amplifier according to claim 1, characterized in that: Each staggered double-gate slow-wave structure adopts the same structural parameters and is connected in parallel or cascade.

3. The strip electron beam multi-channel interleaved dual-gate traveling wave amplifier according to claim 1, characterized in that: The staggered double-gate slow-wave structures belong to different bands, that is, staggered double-gate slow-wave structures of different frequency bands, and signals are simultaneously input into a plurality of staggered double-gate slow-wave structures for amplification.

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