Semiconductor processing equipment
By using light emitting and light receiving parts in semiconductor processing equipment to monitor the etching of the silicon carbide layer of the base, the impact of base damage on wafer product quality is solved, and preventive maintenance and production efficiency are improved.
Patent Information
- Application Number
- CN202421019171.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-11
- Publication Date
- 2024-12-24
- Estimated Expiration
- 2034-05-11
AI Technical Summary
During semiconductor processing, the silicon carbide layer of the base is etched away, causing damage to the base and affecting the quality of wafer products. It is difficult for the prior art to effectively monitor and preventively maintain the base, resulting in damage to product quality.
A semiconductor processing equipment is designed, including a control module, a light emitting member and a light receiving member. The thickness of the base etched by the change of the light reflection path is monitored in real time, and the etching thickness of the base is calculated using the scale identification part and the storage module. , and detect base damage through the storage chamber and heat insulation without affecting production.
Timely and accurate monitoring of the etching of the base is achieved, ensuring preventive maintenance at the appropriate time, avoiding graphite leakage inside the base, and improving the yield and production efficiency of wafer products.
Smart Images
Figure CN222233573U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to semiconductor processing equipment. Background Art
[0002] When the semiconductor industry develops to a higher process, an epitaxy (EPI) machine is needed to perform selective epitaxial growth of the source and drain. The EPI machine mainly consists of two reaction chambers, in which the pre-cleaning reaction chamber is used to etch away the silicon oxide on the surface of the wafer, and then the epitaxial reaction chamber is used to grow thin films such as silicon phosphide (SiP) and boron-doped silicon germanium (SiGeB).
[0003] In the semiconductor process, the wafer needs to be placed on a base so that the wafer rotates with the base, thereby ensuring the uniformity of the reaction gas at different positions of the wafer. The base in the EPI machine is a graphite disc coated with a layer of silicon carbide (SiC) to ensure that the surface of the base is relatively smooth and free of particles; in addition, upper and lower bulb heating modules are set to irradiate the surface of the wafer to ensure that the wafer is heated evenly from top to bottom. Under the action of high temperature, the reaction gas is introduced so that the film can grow on the wafer.
[0004] When the wafer grows SiP and SiGeB in the epitaxial reaction chamber, HCl gas will be introduced into the epitaxial reaction chamber. In addition, when the machine is idle and not running, a large amount of HCl gas will be introduced to clean the epitaxial reaction chamber. These HCl gases will react with the SiC on the surface of the base to generate SiC l4 and CH4 gas. As time goes by, the layer of SiC plated on the surface of the base will be slowly etched away, exposing the graphite inside. In addition, when metal particles such as Al, Fe and Ni are brought into the epitaxial reaction chamber, these metals will also react with the SiC on the surface of the base at high temperatures, aggravating the damage to the base. Since graphite has good conductivity, if carbon particles fall on the surface of the wafer, it will affect the quality of the chip product. Therefore, it is very important to monitor the damage of the base so that the base can be carried out equipment preventive maintenance (PM) and replacement at the right time without affecting the quality of the wafer product. Utility Model Content
[0005] The utility model aims to provide a semiconductor processing equipment, which can monitor the thickness of the etched base at any time, so as to perform PM on the equipment at an appropriate time to avoid affecting the quality of the wafer product.
[0006] To achieve the above-mentioned purpose, the semiconductor processing equipment of the utility model includes a control module, and a base, a light emitting element and a light receiving element arranged in a reaction chamber; the light emitting element is used to emit light toward the upper surface of the base; the light receiving element is in a long strip structure and is provided with a plurality of scale marking parts arranged at equal intervals, and the light receiving element is arranged on the reflected light path of the light after the light is reflected by the upper surface of the base, and the light receiving element is connected to the control module to detect the light and send the scale value corresponding to the light reflected on the scale marking part to the control module; the control module is used to calculate the thickness of the etched base according to the scale value.
[0007] The beneficial effect of the semiconductor processing equipment of the utility model is that: as the base is gradually etched away, the path of the light reflected by the etched base will also change, and the light receiving element is in the form of a long strip, so that even if the reflection path of the light changes, the light receiving element can detect the light reflected by the base, which greatly improves the accuracy of the detection and ensures that the thickness of the etched base can be monitored more timely and effectively; the light emitting element is used to emit light toward the upper surface of the base; the light receiving element is in the form of a long strip and is provided with a plurality of scale marking parts arranged at equal intervals, and the light The receiving element is arranged on the reflected light path after the light is reflected by the upper surface of the base. The light receiving element is connected to the control module to detect the light and send the scale value corresponding to the light reflected by the scale marking part to the control module; the control module is used to calculate the thickness of the etched base according to the scale value, so that the thickness of the etched base can be monitored at any time, so as to perform PM on the equipment at the appropriate time to avoid affecting the quality of the wafer product; and the light receiving element is provided with a plurality of scale marking parts arranged at equal intervals, so that the detection is more accurate and effective, and the detection efficiency is also improved. Among them, for the wafer epitaxial growth equipment, the utility model can monitor the thickness and rate of the silicon carbide layer etched on the surface of the base at any time, so as to perform machine PM at the appropriate time, replace the base, avoid the leakage of graphite inside the base to produce carbon particles and affect the product, and improve the yield of the wafer product.
[0008] Preferably, the semiconductor processing equipment further comprises a storage module, the storage module is used to store the initial scale value corresponding to the scale mark portion of the light reflected by the base before etching, the light receiving element is used to send the detected measured scale value corresponding to the scale mark portion of the light reflected by the base after etching to the control module, the storage module is connected to the control module, and the control module is used to calculate the thickness of the etched base according to the initial scale value and the measured scale value. Its beneficial effect is that the thickness of the etched base is directly calculated by the initial scale value and the measured scale, the data is more accurate and correct, and the thickness of the etched base can be effectively monitored in real time, so that PM can be performed on the machine at an appropriate time, which can effectively avoid graphite leakage inside the base and improve the yield of wafer products.
[0009] Preferably, the semiconductor processing equipment further comprises a receiving chamber, which is connected to the reaction chamber and is used to receive the light emitting element and the light receiving element when not in use. Its beneficial effect is that when the reaction chamber is not in use, the damage of the base can be detected without opening the chamber, thereby ensuring the efficiency of wafer production, and effectively avoiding the light emitting element and the light receiving element being in the reaction chamber during the wafer process and affecting the wafer process, and avoiding the high temperature during the wafer process to affect the light emitting element and the light receiving element.
[0010] Preferably, the light emitting element and the light receiving element are both provided with a retracting element, the retracting element is connected to the control module, and the retracting element is used to control the light emitting element and the light receiving element to move between the receiving chamber and the reaction chamber according to the movement instruction sent by the control module. The beneficial effect is that the light emitting element and the light receiving element can be received in the receiving chamber through the retracting element when not in use, and can be moved to the reaction chamber through the retracting element to perform detection work when in use.
[0011] Preferably, the semiconductor processing equipment further comprises a telescopic guide rail, one end of which is fixed to the receiving chamber, and the other end of which is extended toward the reaction chamber, the light emitting element and the light receiving element are slidably arranged on the telescopic guide rail, and the telescopic guide rail is connected to the control module so as to extend toward the reaction chamber or retract into the receiving chamber under the instruction of the control module. The beneficial effect is that the movement of the light emitting element and the light receiving element between the receiving chamber and the reaction chamber is made more stable, thereby improving the measurement accuracy.
[0012] Preferably, the semiconductor processing equipment further comprises a heat insulating member, which is movably disposed in the connection passage between the receiving chamber and the reaction chamber, and is connected to the control module, so as to control the heat insulating member to block or open the receiving chamber according to the instruction sent by the control module. The beneficial effect is that when the light emitting element and the light receiving element are not in use and are received in the receiving chamber, the connection passage between the receiving chamber and the reaction chamber can be blocked by the heat insulating member, so as to avoid the high temperature in the reaction chamber during the wafer process from affecting the light emitting element and the light receiving element.
[0013] Preferably, the semiconductor processing equipment further comprises an angle adjustment member, which is arranged on the light emitting member, and the angle adjustment member is connected to the control module, so as to adjust the angle of the light emitting member toward the upper surface of the base under the instruction of the control module; and / or the light receiving member comprises a plurality of light receiving parts and folding parts, and the adjacent light receiving parts are connected by the folding parts. The beneficial effect is that the light emitting member can irradiate the entire surface of the base under the control of the angle adjustment member, and the light receiving member can be folded and accommodated in the accommodation chamber through the folding part when not in use, and the light receiving member can be extended and elongated through the folding part according to the actual use situation when in use, so as to detect the light reflected by any area of the base, that is, the device can detect the entire surface of the base, increase the detection range, and ensure that the thickness of the base etched away can be more comprehensively monitored, so that PM can be performed on the machine at an appropriate time, which can effectively avoid the leakage of graphite inside the base and improve the yield of wafer products.
[0014] Preferably, the base includes a graphite layer and a silicon carbide layer covering the surface of the graphite layer, the scale value includes a first scale value and a second scale value, the first scale value is the scale value corresponding to the scale mark portion reflected by the edge of the silicon carbide layer of the base before the light is etched, and the second scale value is the scale value corresponding to the scale mark portion reflected by the center of the graphite layer of the base after the light is etched; the length of the light receiving element is greater than or equal to the difference between the second scale value and the first scale value. Its beneficial effect is that the light receiving element can detect the light reflected by any area of the base, that is, the device can detect the damage of the entire surface of the base and any period, increase the detection range, ensure more comprehensive monitoring of the thickness of the base etched, so that PM can be performed on the machine at an appropriate time, which can effectively avoid the leakage of graphite inside the base and improve the yield of wafer products.
[0015] Preferably, the distance between the light emitting element and the light receiving element and the upper surface of the base is greater than or equal to 20 cm. The beneficial effect is to avoid the light emitting element and the light receiving element from moving and causing damage to the wafer or the base.
[0016] Preferably, the light receiving element is a flexible photoelectric sensor, which has the beneficial effect that the light receiving element can be folded or wound to be accommodated in the accommodation chamber when not in use, and can be extended and stretched according to actual use conditions to detect the light reflected by the base when in use. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a structural schematic diagram of a semiconductor processing equipment according to a first embodiment of the utility model;
[0018] Figure 2 for Figure 1 A schematic side view of the structure of a semiconductor processing equipment shown;
[0019] Figure 3 for Figure 1 A schematic diagram of the top view of the semiconductor processing equipment shown;
[0020] Figure 4 A schematic diagram of the optical path of light on a base before etching and on a base after etching in a semiconductor processing device according to an embodiment of the utility model;
[0021] Figure 5 A schematic diagram of the use status of a light emitting element and a light receiving element in a semiconductor processing device according to a second embodiment of the utility model;
[0022] Figure 6 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 1 ;
[0023] Figure 7 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 2 ;
[0024] Figure 8 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 3 ;
[0025] Fig. 9 It is a schematic diagram of the optical path of light on the edge of the silicon carbide layer before the base is etched and the center of the graphite layer after the base is etched in the semiconductor processing equipment of the embodiment of the utility model. DETAILED DESCRIPTION
[0026] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.
[0027] In order to overcome the problems existing in the prior art, an embodiment of the utility model provides a semiconductor processing equipment, which can monitor the thickness of the etched base at any time, so as to perform PM on the equipment at the appropriate time to avoid affecting the quality of the wafer product.
[0028] Figure 1 It is a structural schematic diagram of a semiconductor processing equipment according to a first embodiment of the utility model; Figure 2 for Figure 1 A schematic side view of the structure of a semiconductor processing equipment shown; Figure 3 for Figure 1 The schematic diagram of the top view of the semiconductor processing equipment is shown.
[0029] In some embodiments of the present invention, reference Figures 1 to 3 The semiconductor processing equipment includes a control module (not shown in the figure), and a base 1, a light emitting element 2 and a light receiving element 3 arranged in a reaction chamber (not shown in the figure); the light emitting element 2 is used to emit light toward the upper surface of the base 1; the light receiving element 3 is in a long strip structure and is provided with a plurality of scale marking parts 31 arranged at equal intervals, and the light receiving element 3 is arranged on the reflected light path of the light after being reflected by the upper surface of the base 1, and the light receiving element 3 is connected to the control module (not shown in the figure) to detect the light and send the scale value corresponding to the light reflected on the scale marking part 31 to the control module (not shown in the figure); the control module (not shown in the figure) is used to calculate the thickness of the base 1 etched according to the scale value.
[0030] Specifically, as the base 1 is gradually etched away, the path of the light reflected by the etched base 1 will also change. The light receiving element 3 is in the form of a long strip, so that even if the reflection path of the light changes, the light receiving element 3 can still detect the light reflected by the base 1, thereby greatly improving the accuracy of the detection and ensuring that the thickness of the etched base 1 can be monitored more timely and effectively. The light emitting element 2 is used to emit light toward the upper surface of the base 1. The light receiving element 3 is in the form of a long strip and is provided with a plurality of scale marking portions 31 arranged at equal intervals. The light receiving element 3 is arranged on the On the reflected light path after the light is reflected by the upper surface of the base 1, the light receiving element 3 is connected to the control module to detect the light and send the scale value corresponding to the scale mark part 31 reflected by the light to the control module; the control module is used to calculate the thickness of the base etched according to the scale value, so that the thickness of the base 1 etched can be monitored at any time, so as to perform PM on the equipment at the appropriate time to avoid affecting the quality of the wafer product; and the light receiving element 3 is provided with a plurality of scale marks 31 arranged at equal intervals, so that the detection is more accurate and effective, and the detection efficiency is also improved. Among them, for the wafer epitaxial growth equipment, the utility model can monitor the thickness and rate of the silicon carbide layer 12 on the surface of the base 1 being etched at any time, so as to perform machine PM at the appropriate time, replace the base 1, avoid the leakage of the graphite layer 11 inside the base 1 to produce carbon particles and affect the product, and improve the yield of the wafer product.
[0031] Among them, reference Figure 2 The positions of the light emitting element 2 and the light receiving element 3 are fixed, and the light receiving element 3 has sent the scale value L0 corresponding to the scale marking part 31 reflected by the light to the control module. The scale value L0, that is, the length and angle α are known. According to the Pythagorean formula, h can be calculated. The original thickness of the base is also known, so the thickness of the base 1 etched away can be obtained.
[0032] Figure 4 It is a schematic diagram of the optical path of light on a base before etching and on a base after etching in a semiconductor processing equipment according to an embodiment of the utility model.
[0033] In some embodiments of the present invention, reference Figure 4The semiconductor processing equipment further includes a storage module (not shown in the figure), which is used to store the initial scale value L corresponding to the scale mark portion 31 of the light reflected by the base 1 before etching, and the light receiving element 3 is used to send the detected measured scale value L1 corresponding to the scale mark portion 31 of the light reflected by the base 1 after etching to the control module (not shown in the figure), and the storage module is connected to the control module, and the control module is used to obtain the thickness H of the base 1 etched according to the initial scale value L and the measured scale value L1. The thickness H of the base 1 etched is directly calculated by the initial scale value L and the measured scale value L1, and the data is more accurate and correct, and the thickness of the base 1 etched can be effectively monitored in real time, so that PM can be performed on the machine at an appropriate time, which can effectively avoid the leakage of graphite inside the base and improve the yield of wafer products.
[0034] The thickness of the base 1 etched away is calculated by the following formula: H=(L1-L) / 2tanα.
[0035] In an embodiment of the utility model, the base before etching is the base that is put into use for the first time, and the silicon carbide layer on the surface of the base is not damaged by etching; the base after etching is the base that has been put into use, and the silicon carbide layer on the surface of the base is damaged by etching.
[0036] In some specific embodiments of the utility model, the scale value includes an initial scale value and a measured scale value, the initial scale value is the scale value corresponding to the light reflected by the base before etching detected by the light receiving element at the scale marking portion, and the measured scale value is the scale value corresponding to the light reflected by the base after etching detected by the light receiving element in real time at the scale marking portion; the control module is used to calculate the thickness of the etched base according to the initial scale value and the measured scale value. In actual application, when the base is first put into use, the light emitting element emits light toward the upper surface of the base before etching, the light receiving element detects the light and sends the initial scale value corresponding to the light reflected at the scale marking portion to the control module, and the control module sends the received initial scale value to the storage module for storage. After the base is put into use, the light emitting element and the light receiving element can be called at any time, so that the light emitting element emits light toward the upper surface of the etched base, and the light receiving element detects the light and reflects the light to send the measured scale value corresponding to the scale marking part to the control module. The control module calls the initial scale value in the storage module based on the received measured scale value to analyze and calculate the thickness of the base etched.
[0037] In some embodiments of the utility model, the semiconductor processing equipment further includes a receiving chamber, which is connected to the reaction chamber and is used to receive the light emitting element and the light receiving element when not in use. When the reaction chamber is not in use, the damage of the base can be detected without opening the chamber, thereby ensuring the efficiency of wafer production, and effectively avoiding the light emitting element and the light receiving element being in the reaction chamber during the wafer process and affecting the wafer process, and avoiding the high temperature during the wafer process to affect the light emitting element and the light receiving element.
[0038] Figure 5 A schematic diagram of the use status of a light emitting element and a light receiving element in a semiconductor processing device according to a second embodiment of the utility model; Figure 6 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 1 ; Figure 7 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 2 ; Figure 8 for Figure 5 Schematic diagram of the contraction state of the light emitting element and the light receiving element in the semiconductor processing equipment shown in FIG. Figure 3 .
[0039] In some specific embodiments of the present utility model, reference Figures 5 to 8 The receiving chamber includes a first receiving chamber 51 and a second receiving chamber 52. The first receiving chamber 51 and the second receiving chamber 52 are both connected to the reaction chamber 4. The first receiving chamber 51 is used to receive the light emitting element 2 when not in use, and the second receiving chamber 52 is used to receive the light receiving element 3 when not in use.
[0040] In some embodiments of the utility model, the light emitting element and the light receiving element are both provided with a contraction element, the contraction element is connected to the control module, and the contraction element is used to control the light emitting element and the light receiving element to move between the receiving chamber and the reaction chamber according to the movement instruction sent by the control module, so that the light emitting element and the light receiving element can be received in the receiving chamber through the contraction element when not in use, and can be moved to the reaction chamber through the contraction element to perform detection work when in use.
[0041] In some specific embodiments of the present utility model, reference Figures 5 to 8The contraction member includes a first contraction member 61 and a second contraction member 62, and both the first contraction member 61 and the second contraction member 62 are connected to the control module. The first contraction member 61 is connected to the light emitting member 2, and the first contraction member 61 is used to control the light emitting member 2 to move between the first receiving chamber 51 and the reaction chamber 4 according to the movement instruction sent by the control module. The second contraction member 62 is connected to the light receiving member 3, and the second contraction member 62 is used to control the light receiving member 3 to move between the second receiving chamber 52 and the reaction chamber 4 according to the movement instruction sent by the control module.
[0042] In some embodiments of the present invention, the contraction member is a cylinder, one end of the cylinder is fixed to the receiving chamber, and the other end of the cylinder is connected to the light emitting member or the light receiving member.
[0043] In some other embodiments of the utility model, the retracting member includes a traction wire and a rotating mechanism, one end of the traction wire is fixedly arranged on the rotating mechanism, and the other end of the traction wire is connected to the light emitting member or the light receiving member. In some specific embodiments, the traction wire is released by the rotating mechanism in a forward rotation, so that the light emitting member and the light receiving member can move to the reaction chamber, and the traction wire is reversely retracted by the rotating mechanism, so that the light emitting member and the light receiving member can move into the receiving chamber.
[0044] In some other embodiments of the present invention, the contraction member includes an elastic member, such as a spring.
[0045] In some embodiments of the utility model, the semiconductor processing equipment further comprises a telescopic guide rail, one end of which is fixed to the receiving chamber, and the other end of which is extended toward the reaction chamber, the light emitting element and the light receiving element are slidably arranged on the telescopic guide rail, and the telescopic guide rail is connected to the control module, so as to extend toward the reaction chamber or retract into the receiving chamber under the instruction of the control module. This makes the movement of the light emitting element and the light receiving element between the receiving chamber and the reaction chamber more stable, thereby improving the measurement accuracy.
[0046] In some specific embodiments of the present utility model, reference Figures 5 to 8The telescopic guide rail includes a first telescopic guide rail 71 and a second telescopic guide rail 72. One end of the first telescopic guide rail 71 is fixed to the first receiving chamber 51, and the other end of the first telescopic guide rail 71 is extended toward the reaction chamber 4. The first telescopic guide rail 71 is connected to the control module, and extends toward the reaction chamber 4 or retracts into the first receiving chamber 51 under the command of the control module. The light emitting element 2 is slidably disposed on the first telescopic guide rail 71. One end of the second telescopic guide rail 72 is fixed to the second receiving chamber 52, and the other end of the second telescopic guide rail 72 is extended toward the reaction chamber 4. The second telescopic guide rail 72 is connected to the control module, and extends toward the reaction chamber 4 or retracts into the second receiving chamber 52 under the command of the control module. The light receiving element 3 is slidably disposed on the second telescopic guide rail 72.
[0047] In some embodiments of the utility model, the semiconductor processing equipment further includes a heat insulating member, which is movably disposed in the connection channel between the receiving chamber and the reaction chamber, and is connected to the control module, so as to control the heat insulating member to block or open the receiving chamber according to the instruction sent by the control module. When the light emitting element and the light receiving element are not in use and are received in the receiving chamber, the connection channel between the receiving chamber and the reaction chamber can be blocked by the heat insulating member, so as to avoid the high temperature in the reaction chamber during the wafer process from affecting the light emitting element and the light receiving element.
[0048] In some specific embodiments of the present utility model, reference Figures 5 to 8 The heat insulating member includes a first heat insulating member 81 and a second heat insulating member 82. The first heat insulating member 81 is movably disposed in the connection passage between the first receiving chamber 51 and the reaction chamber 4, and the first heat insulating member 81 is connected to the control module, so as to control the first heat insulating member 81 to block or open the first receiving chamber 51 according to the instruction sent by the control module, that is, when the light emitting element 2 is not in use and is received in the first receiving chamber 51, the first receiving chamber 51 can be blocked by the first heat insulating member 81 to isolate the high temperature and reaction gas in the reaction chamber 4 from affecting the light emitting element 2. The second thermal insulation member 82 is movably disposed in the connecting passage between the second receiving chamber 52 and the reaction chamber 4, and the second thermal insulation member 82 is connected to the control module so as to control the second thermal insulation member 82 to block or open the second receiving chamber 52 according to the instruction sent by the control module, that is, when the light receiving element 3 is not in use but is received in the second receiving chamber 52, the second receiving chamber 52 can be blocked by the second thermal insulation member 82 to isolate the high temperature and reaction gas in the reaction chamber 4 from affecting the light receiving element 3, etc.
[0049] In some embodiments of the present invention, the thermal insulation member is a thermal insulation board made of thermal insulation material.
[0050] In some embodiments of the present invention, the heat insulating member is slidably disposed on the side wall of the reaction chamber.
[0051] In some embodiments of the utility model, the semiconductor processing equipment also includes an angle adjustment member, which is disposed on the light emitting member and is connected to the control module for adjusting the angle of the light emitting member toward the upper surface of the base under the instruction of the control module, so that the light emitting member can irradiate light on the entire surface of the base under the control of the angle adjustment member.
[0052] In some embodiments of the utility model, the light receiving element includes a plurality of light receiving parts and a folding part, and the adjacent light receiving parts are connected by the folding part, so that the light receiving element can be folded and accommodated in the accommodation chamber through the folding part when not in use, and the light receiving element can be extended and stretched through the folding part according to the actual use situation when in use, so as to detect the light reflected by any area of the base. That is, the device can detect the entire surface of the base, increase the detection range, and ensure that the thickness of the base etched away can be more comprehensively monitored, so that PM can be performed on the machine at an appropriate time, which can effectively avoid the leakage of graphite inside the base and improve the yield of wafer products.
[0053] In some embodiments of the present invention, reference Figures 5 to 8 The light receiving element 3 includes a first light receiving part 301, a second light receiving part 302 and a folding part 303. The first light receiving part 301 and the second light receiving part 302 are connected by the folding part 303, so that when the light receiving element 3 is not in use, the first light receiving part 301 is driven to bend at the folding part 303 under the pulling force of the second shrinking part 62, so as to be folded together with the second light receiving part 302 and then accommodated in the second accommodation chamber 52; when the light receiving element 3 is in use, the first light receiving part 301 is driven to extend at the folding part 303 under the pushing force of the second shrinking part 62, so as to dock with the second light receiving part 302 to form a long strip structure.
[0054] In some embodiments of the utility model, the light emitting element rotates along the radial direction of the base and between the edge portion and the center portion of the base under the control of the angle adjustment element. Since the base can rotate freely, the light emitting element and the light receiving element maintain their positions unchanged during use, so that the thickness change of any area on the same circumference of the base can be detected. Combined with the rotation angle of the light emitting element, the thickness change of the entire surface of the detection base can be realized.
[0055] Fig. 9 It is a schematic diagram of the optical path of light on the edge of the silicon carbide layer before the base is etched and the center of the graphite layer after the base is etched in the semiconductor processing equipment of the embodiment of the utility model.
[0056] In some embodiments of the present invention, reference Fig. 9 The base 1 includes a graphite layer 11 and a silicon carbide layer 12 covering the surface of the graphite layer 11. The scale value includes a first scale value L2 and a second scale value L3. The first scale value L2 is the scale value corresponding to the edge of the silicon carbide layer 12 of the base 1 before the light is etched and reflected on the scale mark portion 31. The second scale value L3 is the scale value corresponding to the center of the graphite layer 11 of the base 1 after the light is etched and reflected on the scale mark portion 31. The length of the light receiving element 3 is greater than or equal to the difference between the second scale value L3 and the first scale value L2. The light receiving element 3 can detect the light reflected from any area of the base 1, that is, the device can detect the damage of the entire surface of the base 1 and any period, increase the detection range, ensure that the thickness of the base 1 etched can be more comprehensively monitored, so that PM can be performed on the machine at an appropriate time, which can effectively avoid the leakage of graphite inside the base and improve the yield of wafer products.
[0057] In some embodiments of the present invention, reference Fig. 9 The end of the light receiving element 3 facing the light emitting element 2 is between the light emitting element 2 and the first scale value L2 to ensure that the light can be reflected onto the light receiving element 3 through the reflected light path of the edge of the silicon carbide layer 12 of the base 1 before etching.
[0058] In some specific embodiments, after the light receiving element is fully extended, the end of the light receiving element facing the light emitting element abuts against the light emitting element.
[0059] In some embodiments of the utility model, the distance between the light emitting element and the light receiving element and the upper surface of the base is greater than or equal to 20 cm, so as to avoid the light emitting element and the light receiving element moving and causing damage to the wafer or the base.
[0060] In some embodiments of the utility model, the light receiving element is a flexible photoelectric sensor, so that the light receiving element can be folded or wound to be accommodated in the accommodation chamber when not in use, and the light receiving element can be extended and stretched according to actual use conditions to detect the light reflected by the base when in use.
[0061] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.
Claims
1. A semiconductor processing equipment, characterized in that: It includes a control module, and a base, a light emitting element and a light receiving element arranged in a reaction chamber; The light emitting element is used to emit light toward the upper surface of the base; The light receiving element is in a long strip structure and is provided with a plurality of scale marking parts arranged at equal intervals. The light receiving element is arranged on the reflected light path of the light after the light is reflected by the upper surface of the base. The light receiving element is connected to the control module to detect the light and send the scale value corresponding to the light reflected by the scale marking part to the control module; The control module is used to calculate the thickness of the base etched away according to the scale value.
2. The semiconductor processing equipment according to claim 1, characterized in that It also includes a storage module, which is used to store the initial scale value corresponding to the scale marking part of the light reflected by the base before etching, and the light receiving element is used to send the detected measured scale value corresponding to the scale marking part of the light reflected by the base after etching to the control module. The storage module is connected to the control module, and the control module is used to calculate the thickness of the etched base based on the initial scale value and the measured scale value.
3. The semiconductor processing equipment according to claim 1, characterized in that The device further comprises a receiving chamber, which is communicated with the reaction chamber and is used for receiving the light emitting element and the light receiving element when they are not in use.
4. The semiconductor processing equipment according to claim 3, characterized in that: The light emitting element and the light receiving element are both provided with a contraction element, the contraction element is connected to the control module, and the contraction element is used to control the light emitting element and the light receiving element to move between the receiving chamber and the reaction chamber according to the movement instruction sent by the control module.
5. The semiconductor processing equipment according to claim 4, characterized in that It also includes a telescopic guide rail, one end of which is fixed to the receiving chamber, and the other end of which is extended toward the reaction chamber, the light emitting element and the light receiving element are slidably arranged on the telescopic guide rail, and the telescopic guide rail is connected to the control module so as to extend toward the reaction chamber or retract into the receiving chamber under the command of the control module.
6. The semiconductor processing equipment according to claim 3, characterized in that It also includes a heat insulating member, which is movably arranged in the connecting channel between the receiving chamber and the reaction chamber, and the heat insulating member is connected to the control module to control the heat insulating member to block or open the receiving chamber according to the instructions sent by the control module.
7. The semiconductor processing equipment according to claim 1, 3 or 4, characterized in that: It also includes an angle adjustment member, which is arranged on the light emitting member and connected to the control module, so as to adjust the angle of the light emitting member toward the upper surface of the base under the instruction of the control module; and / or the light receiving member includes a plurality of light receiving parts and folding parts, and adjacent light receiving parts are connected by the folding parts.
8. The semiconductor processing equipment according to claim 1, characterized in that The base includes a graphite layer and a silicon carbide layer covering the surface of the graphite layer, the scale value includes a first scale value and a second scale value, the first scale value is the scale value corresponding to the scale marking portion reflected by the edge of the silicon carbide layer of the base before the light is etched, and the second scale value is the scale value corresponding to the scale marking portion reflected by the center of the graphite layer of the base after the light is etched; the length of the light receiving element is greater than or equal to the difference between the second scale value and the first scale value.
9. The semiconductor processing equipment according to claim 1, characterized in that The distances between the light emitting element and the light receiving element and the upper surface of the base are both greater than or equal to 20 cm.
10. The semiconductor processing equipment according to claim 1, 3 or 4, characterized in that: The light receiving element is a flexible photoelectric sensor.