A method of manufacturing a
wafer as a product, comprising the steps of:
Grinding and chamfering a
peripheral edge portion of a
wafer cut from a
single crystal ingot; Lapping or double-sided
grinding of the main surfaces of the chamfered
wafer;
Etching the lapped or double-sided ground wafer; single-sided or double-sided mirror
polishing of the main surfaces of the etched wafer; and Mirror
polishing a chamfered portion of the mirror polished wafer, wherein after the chamfering step, the chamfered portion of the wafer has a cross-sectional shape comprising: a first inclined portion extending from a first main surface, which is one of the main surfaces of the wafer, and inclined relative to the first main surface; a first arc portion which is an arc-shaped portion extending from the first inclined portion and having a
radius of curvature R1; a second inclined portion extending from a second main surface, which is another main surface of the wafer, and inclined relative to the second main surface; a second arc portion which is an arc-shaped portion extending from the second inclined portion and having a
radius of curvature R2; and an end portion connecting the first arc portion to the second arc portion and forming an outermost
peripheral end portion of the wafer, during chamfering, the wafer to be a product is chamfered such that the chamfered wafer has R1 and R2 that are smaller than a target value range of R1 and R2 of the
wafer product, and while mirror
polishing the chamfered portion, the chamfered portion is mirror polished so that the mirror polished chamfered portion has R1 and R2 which are within the target value range of R1 and R2 of the
wafer product, thereby manufacturing the
wafer product.