Photomask particle size assessment method

A particle size and photomask technology, applied in optics, optomechanical equipment, microlithography exposure equipment, etc., can solve problems such as tight specifications, product misflow, rework, etc., and achieve the effect of reducing unnecessary rework and increasing costs
CN106933062AActive Publication Date: 2017-07-07SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Publication Date
2017-07-07

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Abstract

The invention discloses a photomask particle size assessment method. After a photomask is subjected to particle detection in each time, corresponding particle size specification is set according to the current exposure illumination condition; the particle size specification is dynamically adjusted, and whether the photomask particle size exceeds standard or not is assessed based on the particle size specification, so that the problems of unnecessary rework and increasing of cost of wafer products caused by over tightness of the particle size specification can be obviously reduced; and a condition that the particle size affects the product in certain exposure conditions while the product is wrongly judged to be qualified can be avoided, so that risk of wrong outgoing of certain products can be prevented.
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Description

technical field

[0001] The invention relates to the technical field of integrated circuit manufacturing, and more particularly, to a method for evaluating particle size of a photomask. Background technique

[0002] In the photolithography process of the chip manufacturing industry, during the exposure process through the mask, if there are particles falling on the mask, it may be imaged on the wafer, resulting in abnormal graphics on the wafer; of course , it is also possible that the particle size is not large enough to be imaged and thus will not affect the product.

[0003] Whether the particles falling from the mask can be imaged on the wafer depends on the size of the illumination spot generated by the particles on the mask. The illuminance spot generally adopts the form of relative value (%), and its size can be calculated according to the optical principle. However, the industry usually calculates the particle size falling on the mask with a fixed illumination spot ...

Claims

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