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Photomask particle size assessment method

A particle size and photomask technology, applied in optics, optomechanical equipment, microlithography exposure equipment, etc., can solve problems such as tight specifications, product misflow, rework, etc., and achieve the effect of reducing unnecessary rework and increasing costs

Active Publication Date: 2017-07-07
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0006] Therefore, the above-mentioned one-size-fits-all particle size specification setting, when encountering the photolithography process of wafers under different exposure lighting conditions during the process, will easily lead to additional rework and increased costs due to excessively tight specifications. ; Conversely, for some products, it may also lead to the risk of false outflow of products due to loose specifications

Method used

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  • Photomask particle size assessment method
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Embodiment Construction

[0031] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0032] It should be noted that in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and partial Enlargement, deformation and simplified processing, therefore, should be avoided as limiting the understanding of the present invention.

[0033] In the following specific embodiments of the present invention, first please refer to figure 2 , figure 2 It is a schematic diagram of the application of the projection optical system on the mask. Such as figure 2 As shown in FIG. 1 , it shows a commonly used glass mask with a photolithographic pattern film surface formed on the surface. During the photolithography process, part...

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Abstract

The invention discloses a photomask particle size assessment method. After a photomask is subjected to particle detection in each time, corresponding particle size specification is set according to the current exposure illumination condition; the particle size specification is dynamically adjusted, and whether the photomask particle size exceeds standard or not is assessed based on the particle size specification, so that the problems of unnecessary rework and increasing of cost of wafer products caused by over tightness of the particle size specification can be obviously reduced; and a condition that the particle size affects the product in certain exposure conditions while the product is wrongly judged to be qualified can be avoided, so that risk of wrong outgoing of certain products can be prevented.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, and more particularly, to a method for evaluating particle size of a photomask. Background technique [0002] In the photolithography process of the chip manufacturing industry, during the exposure process through the mask, if there are particles falling on the mask, it may be imaged on the wafer, resulting in abnormal graphics on the wafer; of course , it is also possible that the particle size is not large enough to be imaged and thus will not affect the product. [0003] Whether the particles falling from the mask can be imaged on the wafer depends on the size of the illumination spot generated by the particles on the mask. The illuminance spot generally adopts the form of relative value (%), and its size can be calculated according to the optical principle. However, the industry usually calculates the particle size falling on the mask with a fixed illumination spot ...

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70491G03F7/7065
Inventor 王晓龙陈力钧李德建朱骏
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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