Tube core chip mounting method for ultrathin wafer process

Abstract

The invention discloses a tube core chip mounting method for an ultrathin wafer process. The method is characterized by comprising the following steps of: providing a wafer and forming an integrated circuit on the front of the wafer; providing a bonding layer; providing a supporting substrate and bonding the supporting substrate on the front of the wafer by using the bonding layer; thinning the back of the wafer; carrying out a back technique on the back of the wafer to form a device electrode; bonding the back of the wafer with the supporting substrate on a cutting film and cutting the wafer and the supporting substrate so as to form a plurality of wafer particles with supporting substrate particles; bonding the plurality of wafer particles on corresponding lead frames; stripping the supporting substrate particles from the wafer particles so as to complete the tube core chip mounting. According to the invention, since a supporting substrate is bound on the wafer and the wafer particles with the supporting substrate are all placed on the lead frames, the mechanical strength of the wafer product can be enhanced, and the electrical property of a circuit on the wafer can be prevented from being affected by conductive silver paste in the chip mounting and bonding process.

Description

technical field

[0001] The invention relates to a method for manufacturing a chip chip, in particular to a chip chip method for an ultra-thin wafer process. Background technique

[0002] In order to adapt to the development trend of miniaturization of integrated circuit chip packaging, people often hope that the thickness of the wafer can be made very thin. However, in the chip packaging and manufacturing process, the silicon wafer needs to have sufficient thickness, otherwise its mechanical strength is not enough, and cracks will occur during the packaging and manufacturing process, especially in the wafer backside thinning process (Wafer Backside Grinding) and wafer backside grinding. During the Die Attach process, the wafer is thinned to 100 μm or less, which can easily lead to a great decrease in the yield rate.

[0003] In the die attach process of wafer particles, the wafer particles are attached to the lead frame or wiring substrate by the conductive silver paste (Ep...

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