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Wafer product and processing method therefor

A processing method and technology for wafers, applied in welding/welding/cutting items, stone processing equipment, laser welding equipment, etc., which can solve problems such as large force and inability to form a reforming zone.

Inactive Publication Date: 2007-05-23
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of doing so, a sufficient number of reforming regions R cannot be formed for the region in the vicinity of the rear surface as a division start point.
As a result, a lot of force is required to cut the substrate

Method used

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  • Wafer product and processing method therefor
  • Wafer product and processing method therefor
  • Wafer product and processing method therefor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0044] Referring first to Figures 1 and 2, a bulk silicon wafer 10 is formed from a monocrystalline silicon body of bulk material, the back side 10a of which is a rough surface serving as a protective layer in which substantially uniform protrusions and depressions 10c are formed. . In order to make the rear surface 10a of the wafer 10 a rough surface, ie, a protective layer, any processing method may be used. Examples of treatment methods include: a method of immersing the back surface 10a in an acid solution or an alkaline solution that affects the material used to form the wafer 10 and chemically treats it; and a method of treating the back surface by mechanical polishing such as sandblasting.

[0045] In order to cut and separate the wafer 10 using laser dicing technology, the following procedure is adopted: a cutting sheet (dicing film, dicing tape, expand tape) 11 is attached to the backside 10a of the wafer 10 . The cut sheet 11 is composed of an extensible sheet mater...

no. 2 example

[0079] The second embodiment shown in Figure 8 is different from the first embodiment in the following aspects:

[0080] (2.1) The back surface 10a of the wafer 10 is a smooth surface.

[0081] (2.2) The cutting sheet 11 is composed of a sheet base material 11a and an adhesive material 11b, and the adhesive material 11b is applied to the entire front surface of the sheet base material 11a.

[0082] (2.3) The sheet base material 11a is formed of a stretchable sheet material, and its front face is a smooth surface. The adhesive material 11b is formed of an adhesive sheet having properties of bonding the wafer 10 and the sheet base material 11a together. An example of the adhesive is an acrylic adhesive. The front face of the adhesive material 11b is a rough surface in which substantially uniform protrusions and depressions are formed, so that the adhesive material serves as a protective layer for protecting the base material 11a from laser light L.

[0083] (2.4) The back sur...

no. 3 example

[0089] In the third embodiment shown in FIG. 9, as described in Sections 2.1 and 2.2 with respect to the second embodiment, the front face 10a of the wafer 10 is a smooth surface and the cutting sheet 11 is formed of a sheet base material 11a and an adhesive material 11b. .

[0090] The third embodiment differs from the second embodiment only in the following:

[0091] (3.1) The front face of the sheet base material 11a is a rough surface in which substantially uniform protrusions and depressions are formed. The front of the adhesive material 11b is a smooth surface.

[0092] (3.2) Attach the entire back surface 10a of the wafer 10 to the front surface of the adhesive material 11b. The front face of the sheet base material 11a (in contact with the adhesive material 11b) is a rough surface.

[0093] Therefore, even if the light converging point P is erroneously set to a point beyond the rear surface 10a of the wafer 10, the above-mentioned problem does not arise. Since the ...

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Abstract

A semiconductor wafer has two faces, one of which is a laser light incident face. A dicing sheet is attached to the other face of the wafer, so that it is stretched to thereby apply tensile stress to a laser-reformed region and cause cutting with the reformed region taken as a starting point for cutting. A protection layer, such as light scattering projections and depressions, a light scattering member or a light reflecting member, is provided between the wafer and the dicing sheet to scatter or reflect the laser light passing through the wafer. Thus, the dicing sheet can be protected from being damaged because the laser light converging point is not formed in the dicing sheet.

Description

technical field [0001] The present invention relates to wafer products and processing methods for the wafer products. Specifically, the present invention relates to a wafer product and a processing method for the wafer product, wherein the wafer product is diced and separated by dicing using a reformed region due to multiphoton absorption as a cutting initiation point, wherein the reformed The region is formed by irradiation of laser light. Background technique [0002] Many laser cutting techniques have been developed for cutting and separating (separating) a wafer-like object to be processed into a plurality of chips using a laser. [0003] For example, a wafer-like object such as a semiconductor substrate to be processed is irradiated with laser light having a light converging point located inside the object. Thus, a reforming (correction) region due to multiphoton absorption is formed inside the object. The reformed zone may be a reformed zone including a fracture zon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/78B23K26/00B28D5/00B23K26/38
CPCB23K26/0617B23K26/0676B23K26/40B23K26/53B23K2103/172B23K2103/50
Inventor 丸山友美田村宗生藤井哲夫船户祐嗣
Owner DENSO CORP
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