Method for detecting semiconductor polish wafer surface scratches

A detection method and semiconductor technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as corrosion, complex detection process, SiC wafer contamination, etc., and achieve low cost and small damage effects
CN105870033AActive Publication Date: 2016-08-17INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2016-08-17

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Abstract

The invention provides a method for detecting semiconductor polish wafer surface scratches. The detection method comprises the following steps that 1, a semiconductor polish wafer is irradiated by means of a pulse laser; 2, the semiconductor polish wafer surface subjected to pulse laser irradiation is observed with a microscope, wherein the total irradiation energy density of the pulse laser is between a first damage energy density threshold value and a second damage energy density threshold value. The detection method is high in speed, low in cost, small in damage to the wafer, free of pollution and capable of being widely applied to rapid detection on the surface scratches of semiconductor polish wafer products.
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Description

technical field

[0001] The invention relates to a method for detecting scratches on the surface of a wafer, in particular to a method for detecting scratches on the surface of a semiconductor polished wafer. Background technique

[0002] During the preparation of semiconductor wafers, the semiconductor is usually cut mechanically, and then the surface of the cut wafer is roughly ground, finely ground, and chemically and mechanically polished to meet the requirements of epitaxy. However, there is often a damaged layer on the surface of a chemically mechanically polished semiconductor wafer, and scratches in the damaged layer will have negative effects on the quality of subsequent homogeneous or heteroepitaxially grown materials and device performance.

[0003] Currently, defects larger than a few microns in size on the surface of semiconductor wafers can be easily identified with the aid of an optical microscope. However, scratches with a width smaller than micron scale (we ...

Claims

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