98 results about "Pulsed laser irradiation" patented technology

The present invention provides a simple-structured reflectance control optical element whose reflectance can be significantly changed and precisely controlled. A transparent film is provided on a substrate having a high reflectance, and further on the surface, an ultrathin film consisting of a metal thin film in which metal nanoparticles having an average particle diameter of 10 nm or less are adjacent to or in contact with each other. The metal is at least any of a single platinum group element, an alloy of platinum group elements, and an alloy of a platinum group element and nickel. The thus obtained element having a three-layer structure has a characteristic of a sharp drop in the reflectance to the light of a given wavelength. By appropriately selecting the thickness or the refractive index of the transparent film, the thickness or the materials of the ultrathin film, and the like, it is possible to control the reflectance according to wavelength. In particular, the metal thin film consisting of a platinum group element makes it feasible to easily control the presence or absence of the ultrathin film by pulsed laser irradiation. Moreover, the present invention provides a light absorption enhancing element in the ultrathin film taking advantage of the reflectance modulation characteristics.

The invention provides a cochlea stimulator for implantation comprising optical fibres of which are coupled to an irradiation source that is controlled by a modulator to generate irradiation specific for a pre-determined range of sound-frequencies. The cochlea stimulator effects a frequency-specific activation of the organ of Corti needed for speech perception especially in noisy environment and more complex sounds. For imparting excitation signals which are generated by modulated pulsed laser irradiation conducted within an optical fibre in order to elicit nervous signals in residual functional organ of Corti sections, the auditory prosthesis preferably contains optical fibres which are dimensioned to terminate in end sections within the cochlea at different sites or sections of the organ of Corti. e.g. having different lengths for locating their end sections at different internal parts of the cochlea.

The invention discloses a method and device for forming a metal reducer pipe based on a laser shock wave technology and belongs to the technical field of laser processing. In the invention, the upper end part, separated from a pipe fitting, of a plugging rod is coated with a laser energy absorption layer; a laser beam enters the interior of a pipe billet to be formed along the axis of the pipe billet, thereby irradiating on the absorption layer on the upper end part of the plugging rod; the absorption layer absorbs laser energy so as to be gasified and ionized, thus forming high-voltage plasmas; and the high-voltage plasmas quickly expand to form a high-amplitude shock wave, thereby promoting the expansion of the pipe billet until the pipe billet is jointed with the profile of a mould, therefore the deformed shape of the pipe billet is in accordance with the profile of the mould. In the invention, the laser shock wave controlled in parameter is utilized as a power source for internal high pressure forming of the pipe billet, and good safety is provided; and the method and device provided by the invention are suitable for not only forming the pipe billet of a material extremely low in yield limit, but also forming the pipe billet with high yield strength; besides, continuous multi-pulse laser irradiation can be performed and uninterrupted multi-impact can be carried out; and high production efficiency is ensured.

The invention provides high efficiency apparatus and method based on laser shock wave for manufacturing micro grooves.The shock wave is generated by an absorbed layer in high energy pulse laser irradiation. The shock wave induced by the laser generates huge pressure, a metal mesh is embedded in a metal material by utilizing the pressure and a micro groove is formed on a surface of the metal material.

A method for the photocatalytic conversion of an oxygenated hydrocarbon such as methanol includes the step of forming a colloidal suspension of a metal oxide catalyst in an oxygenated hydrocarbon. The method also includes the step of irradiating the colloidal suspension with pulsed laser irradiation in the range of about 180 nm to 520 nm wavelength at about 150 mJ per pulse at a temperature at about 16° C. to 60° C. for a period of about 30 minutes or more.

The present disclosure is directed to systems and methods for protecting a semiconductor product or material from harmful effects of pulsed laser irradiation. In some embodiments, a thin sacrificial protective mask layer that expires after one laser processing operation is applied to the surface of the product or material to be laser-treated. The thin protective mask layer reflects, absorbs, or otherwise protects the underlying product or material from the energy of the laser.

A method for inducing the directional discharge of electrode by the pulse laser at high repeat frequency features that after the workpiece to be machined and the discharging electrode are connected respectively to two poles of pulse power supply, the high-repeat-frequency pulse laser generated by laser generator is used to radiate on the surface of said workpiece and the plasma plume is generated at the radiated dot, which can induce the electrode to discharge toward the dot at high frequency. Its application is also disclosed.

The invention discloses a method for preparing a SiC ohmic contact by an ultraviolet pulse laser irradiation device, and relates to the technical field of semiconductor device preparation. The method comprises the following steps of cleaning the surface of a SiC substrate; preparing a contact layer on the SiC surface; after ultraviolet pulse lasers are focused, irradiating the front of the material under the condition of high vacuum or under the protection of inert gas to obtain the ohmic contact. The ultraviolet pulse laser irradiation replaces the traditional thermal annealing, and the SiC ohmic contact with high performance can be obtained. Compared with the traditional thermal annealing, the method has the advantages of short processing time and high reaction temperature, and the range of a processing area can be accurately controlled.

The invention discloses a SnO2/graphene composite material as well as a preparation method and application thereof, and belongs to the technical field of new energy materials. The preparation method comprises the steps of taking a metal Sn foil as a target material and deionized water as a solvent, and preparing a SnOx colloidal solution by adopting a liquid-phase pulse laser irradiation technology; and dropwise adding the SnOx colloidal solution into the graphene oxide solution, uniformly mixing and dispersing, carrying out hydrothermal reaction, and carrying out freeze drying on the productto obtain a SnO2/graphene composite material. According to the SnO2/graphene composite material prepared by the invention, SnOx and graphene oxide are subjected to an in-situ oxidation-reduction reaction in a hydrothermal process, so that uniform and tight anchoring of covalent bonding of ultrafine SnO2 quantum dots on a reduced graphene oxide lamellar wall is realized; and the porous structure ofthe reduced graphene oxide can also be maintained when SnO2 quantum dots are highly loaded.

The invention relates to a method for testing a laser damage threshold of an optical thin film. The method comprises the following steps: S1, obtaining laser energy density Fth of the optical thin film during single-pulse laser damage through test; S2, irradiating the optical thin film by the single-pulse laser, recording laser damage area boundary coordinates (xi, yi) when the laser damage boundary on the surface of the optical thin film is not increased any more, and meanwhile, recording the number n of times of single-pulse laser irradiation; S3, comparing Gaussian distribution of the laserenergy density with laser damage area distribution to obtain a laser damage threshold FN of the optical thin film during multi-pulse laser irradiation damage; and S4, continuously changing the incident laser energy density, and repeatedly executing the steps S2 and S3 to obtain a laser damage threshold curve of the optical thin film under the irradiation of femtosecond laser with different pulsenumbers. The method has the beneficial effects that the measurement accuracy of the laser damage threshold of the optical thin film under multi-pulse laser irradiation is guaranteed, and meanwhile, the test efficiency of the damage threshold of the optical thin film under multi-pulse laser irradiation is greatly improved.

The invention relates to a method for remotely exciting micrometer-scale micro-cantilever probes to resonate by using laser. By applying pulse laser with certain frequency for radiation onto surfaces of the micrometer-scale micro-cantilever probes and producing thermal stress in the micrometer-scale micro-cantilever probes under the thermal effect of the laser, the resonance excitation of the micrometer-scale micro-cantilever probes is realized. The frequency of the pulse laser is 1/n of the resonance frequency of the micro-cantilever probes, wherein n is a number within 1-10. The micrometer-scale micro-cantilever probes are excited to resonate by using n-order Fourier harmonic waves of the thermal stress produced in the micro-cantilever probes under the thermal effect of the laser.

Methods and systems for Laser-Induced Forward Transfer are disclosed in which a microfluidic chip is used as the printing head. The head comprises a transparent upper region, a middle region comprising an intermediate layer channel and an ink channel in fluid connection with said intermediate layer channel, and a lower layer with an orifice in fluid contact with the ink channel. When material in the intermediate layer channel is irradiated by an energy source (typically a pulsed laser) at a spot opposite the orifice, the material is partially evaporated, creating a vapor bubble that creates a transient pressure increase when it collapses, thereby forcing ink out of the orifice and onto a receiving substrate.

The invention provides a non-sticky metal surface and a preparation method thereof. The method comprises the following steps: S1, irradiating the clean metal surface by adopting pulse laser, and etching a nano-scale or micron-scale micro-nano structure used for achieving the super-lyophobic characteristic or the lyophobic characteristic on the metal surface; and S2, cleaning and spraying the metal surface of the micro-nano structure ablated with a low-surface-energy coating. According to the non-sticky metal surface and the preparation method thereof, the micro-nano structure is ablated on the metal surface through the pulse laser, the metal surface of the micro-nano structure is sprayed with the low-surface-energy coating, so that the metal surface has the super-lyophobic characteristic or the lyophobic characteristic, the effect of being not sticky to viscous beverages such as milk and yoghourt and dairy products can be achieved, the non-sticky performance is lasting, and the non-sticky metal surface can be reused.

The invention provides a method for detecting semiconductor polish wafer surface scratches. The detection method comprises the following steps that 1, a semiconductor polish wafer is irradiated by means of a pulse laser; 2, the semiconductor polish wafer surface subjected to pulse laser irradiation is observed with a microscope, wherein the total irradiation energy density of the pulse laser is between a first damage energy density threshold value and a second damage energy density threshold value. The detection method is high in speed, low in cost, small in damage to the wafer, free of pollution and capable of being widely applied to rapid detection on the surface scratches of semiconductor polish wafer products.

The invention discloses a self-cleaning metal surface as well as a preparation method and a preparation device thereof. A measurement method comprises the following steps that S1, the metal surface iscleaned and dried; S2, pulse laser is adopted to irradiate the metal surface to etch out nano-scale or micron-scale particles, organic matter is adsorbed to the metal surface obtained after laser etching, and the organic matter has a functional group used for reducing surface energy; and S3, heating treatment is carried out on the metal surface etched with the particles. According to the invention, the self-cleaning metal surface with a super-lyophobic characteristic or lyophobic characteristic can be prepared only through pulse laser and heating treatment, chemical process treatment is not needed, the process is simple, the efficiency is high, environmental protection is achieved, and the performance is lasting.

The invention discloses a laser active tracking system and tracking method. The system comprises a laser marker, a light spot test unit and a data transmission unit. The light spot test unit comprisesa receiving mirror, a four-quadrant photoelectric detector, a CCD imaging detector and an acquisition processing circuit; after pulse laser emitted by the laser irradiates a target, the CCD processing unit processes the CCD imaging detector to obtain a light spot image; the acquisition processing circuit acquires and processes an output electric signal of the four-quadrant photoelectric detectorto obtain a light spot centroid coordinate; the light spot image and the light spot centroid coordinate are sent to a far-end command and control center through the data transmission unit; according to the invention, the active tracking system integrates the four-quadrant detector, the CCD image sensor and the target indication laser together; the target indication laser emits pulse laser; comprehensive testing and target tracking of laser spots are achieved, and target parameters and decision basis reference are provided for accurate strike of semi-active guided weapons.

The invention relates to a pulse laser irradiation treatment method for healing fatigue damage of a copper thin film part. The pulse laser irradiation treatment method comprises the following steps of: A) providing a laser irradiation healing device, wherein the laser irradiation healing device comprises a pulse laser, a light path device, a guide rail and a test piece fixing device; B) fixing a copper thin film test piece at the center of a metal flat plate; C) causing a laser emitting hole, the light path device and the test piece fixing device to be on the same line by virtue of the guide rail; D) controlling size of a laser spot; E) causing the laser spot to accurately irradiate a gap of a test piece; F) adjusting single pulse energy by virtue of a laser control system, so as to change energy density of lasers, wherein the lasers emitted by the pulse laser are irradiated onto the surface of the copper thin film test piece by virtue of a convex lens in the light path device; and G) taking down the copper thin film test piece from the test piece fixing device. By adopting the pulse laser irradiation treatment method, a heat-affected zone is formed on the surface of a material, so that fatigue damage of the copper thin film test piece can be effectively healed, and fatigue life of the copper thin film test piece can be also greatly prolonged.

Method and system for generating a metal thin film with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradicated with a pulsed laser to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask which includes a first region capable of attenuating the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.

The invention discloses a method for regulating and controlling oxygen defects of a cerium dioxide nano material by pulse laser irradiation in a liquid phase, and the method comprises the following steps: dispersing CeO2 nanosheet powder in a solvent to prepare a 1mg/mL turbid liquid; wherein the solvent is at least one of water, methanol, ethanol or acetone; while stirring the turbid liquid, irradiating the turbid liquid for 5-60 minutes by adopting pulse laser with the wavelength of 355 nm or 532 nm, the pulse frequency of 20 Hz and the monopulse energy of 10-120 mJ; carrying out centrifugaltreatment, cleaning precipitates obtained by the centrifugal treatment by adopting deionized water, and then carrying out freeze drying to obtain the cerium dioxide nano material with reduced oxygendefects. The method is simple, safe, mild in condition, efficient and rapid in regulation and control process and environmentally friendly, other impurities are not introduced, and the pure and high-performance CeO2-x nano material with reduced oxygen defects can be obtained.

The invention discloses a wide bandgap semiconductor device irradiation effect laser simulation system. The system comprises a short wavelength pulse laser generation and attenuation system, a microimaging and energy monitoring system and a testing and control system. The short wavelength pulse laser irradiation wide bandgap semiconductor device can be used, an ionization effect is generated in the semiconductor device to simulate gamma ray and other irradiation sources to act on the irradiation ionization effect of the semiconductor device, a gap of the wide bandgap semiconductor device irradiation ionization effect laser simulation system is filled up, the system has the advantages of being compact in structure, high in safety and the like, lowers the testing cost and improves the testing efficiency, and the effective means is provided for performing irradiation resisting reinforcing design on the wide bandgap semiconductor device.

The invention relates to a high-speed DDR4 single event effect evaluation system and method based on an FPGA. The high-speed DDR4 single event effect evaluation system comprises a DDR4 to be tested, ahigh-energy irradiation experiment terminal or pulse laser irradiation platform and a single event test system. A DDR4 active region to be tested is located in the center of the high-energy irradiation experiment terminal or the pulse laser irradiation platform, and the DDR4 to be tested is in real-time communication with the single-particle test system; the lower computer system of the single particle test system is used for performing read-write operation on the DDR4 to be tested according to an instruction sent by the upper computer system and sending read-back data of the DDR4 to be tested to the upper computer system; and the upper computer system is used for issuing an instruction, carrying out read-write operation on the to-be-tested DRR4 in real time, carrying out read-back verification on written data, and discriminating single-particle soft errors, thereby realizing testing of the single-particle effect of the to-be-tested DRR4. The method can be widely applied to the fieldof single event effect testing.

The invention belongs to the technical field of 3D printing equipment detection and discloses an online monitoring device for the surface hardness of a 3D printing part in a forming process. The device comprises a workbench, a laser, a spectrograph, a light path device, a reflector, an electric control displacement device, a computer and a support. The electric control displacement device, the laser and the support are sequentially arranged on the workbench, the laser is arranged below the reflector, the light path device is arranged on one side of the electric control displacement device, andthe computer is arranged above the workbench. The invention further discloses a detection method. The device is mounted in a forming chamber of 3D printing equipment, the pulse laser irradiation canbe performed on a formed part of the part in real time to generate plasma, plasma spectrum data are collected to evaluate the surface hardness of the formed part, a condition that the overall surfacehardness of the 3D printing part meets a design requirement is ensured through online real-time hardness detection, and the phenomenon that the hardness does not reach a standard due to unpredictablefactors in the forming process is avoided.

The invention discloses a dry-cleaning sterilizer. The dry-cleaning sterilizer comprises an arranging mechanism, a conveying belt, a dry-cleaning device and a sterilization device, wherein a jet nozzle is arranged at the top end of the dry-cleaning device; the conveying belt is used for conveying a material to a material use point through the dry-cleaning device and the sterilization device from the collection opening end of the conveying belt; the sterilization device comprises an inert gas lamp, a pulse laser generator and reflectors on two sides of the sterilization device; the conveying belt positioned in the sterilization device passes through the space between the reflectors on two sides of the sterilization device; and high-intensity pulse laser generated by the pulse laser generator is used for completely illuminating all light energy to a to-be-processed material on the conveying belt by virtue of the reflectors. According to the dry-cleaning sterilizer, pre-treatment and cleaning operation before foreign material cleaning and sterilization of a material surface can be completed by adopting a mode of cleaning, boosting, high-temperature air local dry-cleaning and integral wiping; the material surface is sterilized by adopting a harmless pulse laser irradiation mode; and the material is continuously conveyed by adopting the transmission mechanism, and the effective effect of cleaning and sterilizing can be guaranteed.

The invention discloses a pulse laser spot comprehensive test system and a spot test method. The system comprises an optical aiming unit, a four-quadrant photoelectric detector, an acquisition processing circuit, a CCD imaging detector, a CCD processing unit and an image display unit. After pulse laser emitted by the laser device irradiates a target, reflected light spots of the pulse laser are synchronously incident to the four-quadrant photoelectric detector and the CCD imaging detector through the optical aiming unit, and the CCD processing unit processes the CCD imaging detector to obtainlight spot images. The acquisition processing circuit acquires and processes an output electric signal of the four-quadrant photoelectric detector to obtain a light spot centroid coordinate. The lightspot image and the light spot centroid coordinate are displayed on the image display unit in real time. According to the invention, two laser detection technologies of four-quadrant photoelectric detection and CCD imaging detection are integrated together, and data and images respectively obtained by the two sensors are fused together, so that the comprehensive test of laser spots is realized.