Wide bandgap semiconductor device irradiation effect laser simulation system

Abstract

The invention discloses a wide bandgap semiconductor device irradiation effect laser simulation system. The system comprises a short wavelength pulse laser generation and attenuation system, a microimaging and energy monitoring system and a testing and control system. The short wavelength pulse laser irradiation wide bandgap semiconductor device can be used, an ionization effect is generated in the semiconductor device to simulate gamma ray and other irradiation sources to act on the irradiation ionization effect of the semiconductor device, a gap of the wide bandgap semiconductor device irradiation ionization effect laser simulation system is filled up, the system has the advantages of being compact in structure, high in safety and the like, lowers the testing cost and improves the testing efficiency, and the effective means is provided for performing irradiation resisting reinforcing design on the wide bandgap semiconductor device.

Description

technical field [0001] The invention belongs to the research field of radiation effects of semiconductor devices, and mainly relates to a laser simulation system for radiation effects of wide bandgap semiconductor devices. Background technique [0002] The instantaneous dose rate radiation effect of semiconductor devices refers to the ionizing radiation damage exhibited by semiconductor devices exposed to instantaneous pulsed γ-ray radiation. The mechanism is that the instantaneous ionizing pulse radiation excites electron-hole pairs in semiconductor materials. These photogenerated carriers will generate instantaneous photocurrent during the process of being collected by the device. When the radiation dose rate increases to a certain extent, the photocurrent may be equal to or even greater than the current signal of the circuit itself, resulting in circuit dysfunction or failure. Therefore, in-depth study of the mechanism and influence of the radiation effect of semiconduct...

AI Technical Summary

Problems solved by technology

However, these large-scale ground radiation simulation devices have the following limitations: limited radiation measurement range, very difficult parameter adjustment, long time required to change the radiation type and energy, damage to the device under test, and difficulty in accurately providing the precise time and time of the device under radiation. Space information, strict radiation shielding and protection measures, etc., are difficult to meet the needs of researchers in the laboratory to study and verify the radiation effects and working performance of semiconductor devices flexibly, quickly and safely in the early stage of design

At present, some domestic units have established a single event effect laser simulation system for silicon-based devices, and some units have established a radiation dose rate effect laser simulation system for silicon-based devices, but there is no radiation effect laser simulation system for wide-bandgap semiconductor devices. , which cannot meet the needs of laser simulation of radiation effects on wide bandgap semiconductor devices

Images