70results about How to "Eliminate Diffusion" patented technology

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

A fuel delivery rail assembly for supplying fuel to a plurality of fuel injectors in an engine is provided. The assembly includes an elongate conduit having a longitudinal fuel passage therein, a fuel inlet pipe, and a plurality of sockets. One wall of the conduit opposite to the socket mounting wall includes a flat or arcuate flexible absorbing surface. A high-frequency noise suppressing device such as a binding member is fixed within the conduit for connecting the one wall and the socket mounting wall. The binding member includes is comprised of a pipe, a bar or a rigid block. The binding member may be a body portion of an extending socket terminating with the one wall. Thus, fuel pressure pulsations and shock waves are reduced by bending of the absorbing surface, and emission of high-frequency noise is eliminated.

A fuel delivery rail assembly for supplying fuel to a plurality of fuel injectors in an engine includes an elongated conduit having a longitudinal fuel passage therein, a fuel inlet pipe, and a plurality of sockets. One wall of the conduit opposite to the socket mounting wall includes a flat or arcuate flexible absorbing surface. A high-frequency noise suppressing component such as a rib, a cavity or a clamp is applied to the one wall opposite to the absorbing surface. Thus, fuel pressure pulsations and shock waves are reduced by bending the absorbing surface, and emission of high-frequency noise is eliminated.

The invention discloses a natural gas catalytic pyrolysis hydrogen production catalyst and a preparation method thereof. The natural gas catalytic pyrolysis hydrogen production catalyst takes MOyCNFs as a carrier to load an active component Ni; wherein, the weight portions of each component are as follows: 10 to 50 portions of Ni element, 5 to 70 portions of MOy and 2 to 45 portions of CNFs; the preparation method is as follows: the MOy and pretreated CNFs are added into water solution of nickel salt, then a soda lye is added to adjust the pH value between 6 and 8; then the mixture is stirred and stood; the obtained deposit is filtered, washed and dried, thus obtaining the catalyst. The catalyst has the advantages of high methane conversion rate, high carbon deposit resistance and good stability. The invention belongs to the field of natural gas hydrogen production.

The invention discloses a tracking system of a satellite-ground quantum communication link direction, aiming at the application background of the high-precision beaconing tracking of satellite-groundquantum communication, and provides a real-time high-precision high-bandwidth beaconing detection and information acquiring system of FPGA hardware image processing and information extraction based ona CMOS or CCD detector and adopts an integrated design method. The invention also proposes a beaconing facula image processing method with the combination of facula shaping and position extraction, inhibits the interrupting influence of an atmosphere turbulence signal channel between a satellite and the ground on the beaconing facula, and improves the tracking and pointing precision, bandwidth and stability of a capturing tracking system. Under the condition that the atmosphere turbulence exists, the detection precision of the system on beaconing laser is better than 0.5 mu rad, and the detection bandwidth is higher than 2.5 kHz. The invention satisfies the requirement of the satellite-ground quantum communication capturing tracking system, in particular a satellite-carried terminal.

The invention provides a method for continuously preparing a nanoflower lithium ion battery layered anode material and a reaction kettle realizing the method. The method includes: (1), preparing a: preparing raw materials according to a chemical formula LiNixCoyMn1-x-yO2; (2), co-precipitating: using a co-precipitation method to obtain a reaction product, and subjecting the reaction product to aging, filtering, washing and drying to obtain precursor particles of a nanoflower structure; (3), calcining:calcining the precursor particles at high temperature to obtain the nanoflower lithium ion battery layered anode material. A template agent does not need to be added in the preparation process, and the particles are controllable in size, uniform in distribution and high in uniformity. Three layers of stirring paddles are arranged in the reaction kettle and stir at the same time, so that the materials are quick and uniform in reaction, and the particles are uniform and high in fluidity. By using the method, the lithium ion battery anode material in special nanoflower shape; the method is simple to operate, the reaction kettle is stable and reliable in structure, and industrial production is facilitated.

The invention discloses an image encryption method based on the projection synchronization of a hyperchaotic system. The method comprises the steps of plaintext image quantifying and ciphertext image quantifying. The first step comprises generating of a hyperchaotic sequence of a hyperchaotic driving system, image row scrambling, image column scrambling, image diffusing, circulation image row scrambling, image column scrambling, multiple rounds of image diffusing, and a ciphertext image is acquired. The second step comprises ciphertext image quantifying, generating of a hyperchaotic sequence of a hyperchaotic response system, time acquiring, column scrambling index and line scrambling index valuing, image inverse diffusing, image inverse column scrambling, image inverse row scrambling, circulation image inverse diffusing, image inverse column scrambling, multiple rounds of image inverse row scrambling, and a decrypted image is acquired. According to the invention, a feedback mechanism with the current image is introduced; the row (column) scrambling address code and the key matrix are dynamically changed in each round of encryption; experiments show that the method has the advantages of good encryption effect, high security and large key space, can resist selected plaintext attacks, known plaintext attacks and various statistical attacks.

A W-Cu-Ni alloy having thermophysical properties suitable for use in electrical contacts and electrodes is described. The alloy is formed by direct sintering of a powder blend comprising a tungsten-copper composite powder and a nickel powder. The tungsten-copper composite powder component of the blend comprises individual dual phase particles having a copper phase and a tungsten phase wherein the tungsten phase substantially encapsulates the copper phase. The method for direct sintering the W-Cu-Ni alloy substantially eliminates the formation of brittle intermetallics and slumping during sintering.

A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed over the oxide layer. The composite barrier layer eliminates the diffusion of impurity atoms from the glass film into the active regions of the device.

There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

The invention discloses an aluminum alloy cast ingot uniform heat treatment method of tin pot body, which comprises the following steps: (1)making mass percent of alloy as 0.20 Si, 0.52 Fe, 0.18 Cu, 1.02 Mn and 1.23 Mg; setting the other single element not bigger than 0.05 and major total not bigger than 0.15; making the surplus as Al; casting the tin pot body with aluminum alloy; proceeding high-temperature uniform treatment in propulsion heating furnace with cooling device; controlling the temperature at 550-620 deg.c and keeping temperature time at 12-24h; forced-cooling to 460-500 deg.c with cooling speed at 20-60 deg.c/h; (2) controlling heat treatment of evolution phase in the same heating furnace; controlling the temperature at 450-500 deg.c and time at 6-12 h. This invention provides support for high quality production of AA3104 aluminum alloy sheet.

The invention relates to design optimization of microprocessors using spare driver outputs for discrete input interfaces. An output driver or pre-FET driver is used to interface a discrete input for a microprocessor. To read the discrete interface, a fault detection mechanism of the pre-FET driver or the output driver is used. Monitoring the fault register of the output driver allows the condition of the external switch to be understood. The circuit is able to read either a switched to battery type interface or a switched to ground type interface, thereby eliminating hardware proliferation. The fault register is read through a serial peripheral interface (SPI) bus, thereby removing the need for a dedicated microprocessor pin required for the interface. Toggling the gate in the pre-FET driver interface permits adding diagnostic capability for the discrete input interface.

The invention concerns a device (100) for the detection and/or quantitative analysis of hydrogen, intended for monitoring an installation (1). Said device (100) comprises a first measuring optical fibre (10) intended to equip the installation (1), and an optical system (20) optically connected to the first measuring optical fibre (10) and adapted to measure the variation in at least one parameter of the first measuring optical fibre (10). The optical system (20) is adapted to measure the parameter along the first optical fibre (10) according to the principle of Brillouin measurement. The invention also concerns a method using such a device (100).

The invention provides a TMR read sensor with low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces. The low-contact-resistance metal/metal interfaces in a reference or sense layer structure are in-situ formed in a high-vacuum deposition module of a sputtering system, without exposures to low vacuum in a transfer module and damages caused by a plasma treatment conducted in an etching module. The low-contact-resistance metal/oxide interface is formed by utilizing a thin Co—Fe—B reference layer and a thick Co—Fe reference layer to reduce boron diffusion and segregation caused by annealing. The low-contact-resistance oxide/metal interface is formed by replacing a Co—Fe—B sense layer with a Co-rich Co—Fe sense layer to eliminate boron diffusion and segregation caused by annealing. With the low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces, the TMR read sensor exhibits a junction resistance-area product of below 0.6 Ω-μm², while maintaining a low ferromagnetic coupling field and a high TMR coefficient.

The invention provides a method for preparing barium strontium titanate thin film material. The method adopts Ba(dfhd)2(tetraglyme), Sr(dfhd)2(tetraglyme) and TTIP-Ti(OC3H7)4 as the precursors; oxygen is taken as the reacting gas; argon is taken as the carrier gas; barium strontium titanate (BST) thin film is rapidly deposited by adopting a two-stage growth method, namely the arium strontium titanate (BST) thin film is in nucleation stage at the temperature of 650 to 700 DEG C, and is in growth stage at the temperature of 800 to 850 DEG C; then heat treatment is performed in an oxygen atmosphere at the temperature of 400 to 600 DEG C. Because quick temperature rise is adopted from the nucleation stage to the growth stage, non ideal nucleation and diffusion process can be eliminated. BST thin film with high orientation and even granule size is obtained by adopting the method. The thin film is an ideal material used for the dynamic random access memory, the monolithic microwave integrated circuit, the dielectric phase shifter and the uncooled infrared focal plane array.

The invention provides a semiconductor device and a manufacturing method therefor and an electronic apparatus, and relates to the technical field of a semiconductor. The manufacturing method comprisesthe steps of providing a semiconductor substrate, and forming a first fin structure, a second fin structure and a third fin structure in a pull-up transistor region, a pull-down transistor region anda transmission gate transistor region of the semiconductor substrate respectively; removing a first pseudo gate structure and a second pseudo gate structure to form a first gate groove and a second gate groove; forming a first P type work function layer at the bottom and on the side wall of the first gate groove in the pull-up transistor region; forming a second P type work function layer at thebottom and on the side wall of the first gate groove; forming a third P type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove in the pull-down transistor region; and forming an N type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove.

The invention discloses a transmission method of a TS0 time slot signal, comprising: an RRU in a high-speed rail cell transmits a common channel signal and a preset pilot signal that lasts for the entire TS0 time slot on the TS0 time slot, wherein the common channel signal and The pilot signals are on mutually orthogonal code channels; the high-speed rail repeater located on the high-speed railway train, for any carrier, receives the pilot signal in the TS0 time slot, and estimates the time of TS0 according to the pilot signal saved by itself. The channel characteristic of each chip on the slot; according to the channel characteristic of each chip on the estimated TS0 time slot, carry out MMSE demodulation to the common channel signal on the TS0 time slot, and obtain the chip-level signal of the common channel signal; Carry the obtained chip-level signal on any carrier and send it to the UE on the high-speed railway train. By applying the present invention, Doppler spread can be overcome, and the signal receiving performance of the UE on the TS0 time slot in the high-speed rail cell can be improved.

The invention belongs to the technical field of chemical engineering and electrocatalysis, and discloses a device and a method for synthesizing ammonia through electro-catalytic nitrogen reduction byreplacing a Nafion membrane with a salt bridge. The device comprises an anode tank and a cathode tank which are filled with electrolytes, an anode plate is suspended in the anode tank and is immersedin the electrolyte, an anode plate is connected with a power supply positive electrode through a wire, a cathode plate and a reference electrode are suspended in the cathode tank and are immersed in the electrolyte, a nitrogen introducing pipeline is arranged in the cathode tank and is immersed in the electrolyte, a gas outlet is further formed in the top of the cathode tank, the cathode plate isconnected with a power supply negative electrode through a wire, and the anode tank and the cathode tank which contain the electrolytes are connected through the salt bridge. The device and the methodhave the following advantages: 1, the influence of diffusion and adsorption of ammonia on the Nafion membrane on ammonia concentration measurement can be eliminated, and objective and accurate evaluation of the catalyst is realized; 2, long-term stable operation of an NRR process can be realized; and 3, compared with the Nafion membrane, the salt bridge reduces the cost.