Semiconductor device and manufacturing method therefor and electronic apparatus

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems affecting the mismatch performance of SRAM devices, achieve simple structure, improve mismatch performance, and eliminate aluminum diffusion Effect

Active Publication Date: 2018-03-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In FinFET devices, the work function layer is very important for the adjustment of the device. In the process of device preparation, the post metal gate process is usually used to form the work function layer. In order to

Method used

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  • Semiconductor device and manufacturing method therefor and electronic apparatus
  • Semiconductor device and manufacturing method therefor and electronic apparatus
  • Semiconductor device and manufacturing method therefor and electronic apparatus

Examples

Experimental program
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Example Embodiment

[0065] Example one

[0066] Below, reference Figure 1A-Figure 1H The manufacturing method of the semiconductor device of the present invention is introduced in detail, among which, Figure 1A-Figure 1H Shows a cross-sectional view of a structure formed in relevant steps of a method for manufacturing a semiconductor device in an embodiment of the present invention; figure 2 Shows a top view of a structure obtained by a method of manufacturing a semiconductor device in an embodiment of the present invention, and along figure 2 The structure obtained by the middle section line and Figure 1H The structure in the corresponding.

[0067] Specifically, first, as Figure 1A As shown, a semiconductor substrate 100 is provided. The semiconductor substrate 100 includes a pull-up transistor area, a pull-down transistor area, and a transfer gate transistor area. The pull-up transistor area, the pull-down transistor area, and the transistor area are on the semiconductor substrate. A first fin s...

Example Embodiment

[0144] Example two

[0145] The present invention also provides a semiconductor device formed using the method in the foregoing first embodiment, and the semiconductor device may be an SRAM device.

[0146] Below, refer to Figure 1H with figure 2 The semiconductor device of the present invention will be described in detail.

[0147] First, the semiconductor device of the present invention includes: a semiconductor substrate 100, the semiconductor substrate 100 includes a pull-up transistor region, a pull-down transistor region, and a transmission gate transistor region, and the pull-up transistor region on the semiconductor substrate, A first fin structure 1021, a second fin structure 1022, and a third fin structure 1023 are formed in the pull-down transistor area and the transfer gate transistor area, respectively.

[0148] The semiconductor substrate 100 may include an active area for forming various constituent elements of the SRAM. For example, a PMOS device is formed in the pul...

Example Embodiment

[0184] Example three

[0185] The present invention also provides an electronic device, including the semiconductor device described in the second embodiment, and the semiconductor device is manufactured according to the method described in the first embodiment.

[0186] The electronic device of this embodiment may be any electronic device such as a mobile phone, a tablet computer, a notebook computer, a netbook, a game console, a TV, a VCD, a DVD, a navigator, a digital photo frame, a camera, a camcorder, a voice recorder, MP3, MP4, PSP, etc. Products or equipment can also be any intermediate products that include circuits. The electronic device of the embodiment of the present invention has better performance due to the use of the above-mentioned circuit.

[0187] among them, Figure 4 An example of a mobile phone handset is shown. The mobile phone handset 400 is provided with a display portion 402 included in a housing 401, operation buttons 403, an external connection port 404,...

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Abstract

The invention provides a semiconductor device and a manufacturing method therefor and an electronic apparatus, and relates to the technical field of a semiconductor. The manufacturing method comprisesthe steps of providing a semiconductor substrate, and forming a first fin structure, a second fin structure and a third fin structure in a pull-up transistor region, a pull-down transistor region anda transmission gate transistor region of the semiconductor substrate respectively; removing a first pseudo gate structure and a second pseudo gate structure to form a first gate groove and a second gate groove; forming a first P type work function layer at the bottom and on the side wall of the first gate groove in the pull-up transistor region; forming a second P type work function layer at thebottom and on the side wall of the first gate groove; forming a third P type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove in the pull-down transistor region; and forming an N type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the field of semiconductor technology, static random access memory (SRAM) devices, as a typical semiconductor device, are widely used in electronic devices such as computers, mobile phones, and digital cameras. Currently, there are some designs that use fin field effect transistors (FinFETs) as transistor devices of SRAM cells to improve the density and performance of SRAMs. [0003] In order to adjust the α ratio, β ratio and γ ratio of the SRAM device to obtain better device performance, there is a method in the prior art: for the pull-up transistor (PU), pull-down transistor (PD) and pass-gate transistor of the SRAM device (PG) Select different numbers of fin structures, for example: 1, 1, 1, or 1, 2, 1, or 1, 3, 2 respectively. [0004] Different...

Claims

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Application Information

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IPC IPC(8): H01L21/8244H01L21/28H01L21/8234H01L27/088H01L27/11H01L29/10H01L29/423
CPCH01L27/0886H01L29/1033H01L29/42364H01L21/823412H01L21/823431H01L21/823462H10B10/12H01L21/823842
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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