A kind of manufacturing method of finfet device

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low sensitivity of threshold voltage, doping loss, etc., achieve improved lateral diffusion, achieve performance, and avoid outward diffusion Effect

Active Publication Date: 2021-11-12
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, it is necessary to implement multi-threshold voltage (multi-Vt) devices on FinFETs, which is a very big challenge for 3D FinFETs. (multi-Vt) provides a solution, but the threshold voltage sensitivity of the multi-threshold voltage (multi-Vt) FinFET device prepared by the prior art is low, and as the fin width shrinks, especially when it is less than 10nm, doping ( doping loss) loss problem becomes more and more serious

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  • A kind of manufacturing method of finfet device
  • A kind of manufacturing method of finfet device
  • A kind of manufacturing method of finfet device

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[0032] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0033] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0034] It will be understood that when an element or layer is referred t...

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Abstract

The present invention provides a method for manufacturing a FinFET device, the method comprising: providing a semiconductor substrate having a first region and a second region, the first region includes a plurality of fins, and the second region includes a plurality of fins sheet; forming a first doped layer on the semiconductor substrate, the first doped layer covering the second region; performing a first annealing treatment; forming a second doped layer on the semiconductor substrate , the second doped layer covers the first region; performing a second annealing treatment. According to the manufacturing method of the FinFET device provided by the present invention, the fin threshold voltage is doped through the solid-state source doping layer, thereby avoiding the outward diffusion of dopant ions in the subsequent heat treatment process; Lateral diffusion can improve the mismatch performance of the device, thereby realizing the preparation of multi-threshold voltage (multi‑Vt) FinFET devices with good performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a FinFET device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit (IC) performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. At present, due to the demand for high device density, high performance, and low cost, the semiconductor industry has advanced to the nanotechnology process node, and the fabrication of semiconductor devices is limited by various physical limits. [0003] As the critical dimensions of semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) continue to shrink, short channel effects (SCE) are becoming more and more serious. Compared with existing planar transistors, FinFET (Fin Field Effect Transistor) has superior performance in terms of channel c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/66795
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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