Semiconductor device and producing method thereof, and electronic device

Abstract

The invention provides a semiconductor device and a producing method thereof, and an electronic device, which relate to the technical field of semiconductors. The method comprises the steps of providing a semiconductor substrate, and forming a first fin structure and a second fin structure respectively in a PMOS zone and a NMOS area of the semiconductor substrate; forming a high-k dielectric layercrossing the first fin structure and the second fin structure; forming a first protective layer crossing the first fin structure and the second fin structure on the high-k protective layer; forming aP type work function layer and a second protective layer in order on the first protective layer; forming a patterned mask layer to cover the PMOS zone, and exposing the second protective layer in theNMOS zone; removing the second protective layer and the P type work function layer in the NMOS zone, and stopping at the first protective layer; removing the patterned mask layer; removing the exposed first protective layer and the second protective layer. The invention is advantageous in that the fluctuation of the PMOS and NMOS work function can be reduced, and mismatch performance of the device can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the field of semiconductor technology, static random access memory (SRAM) devices, as a typical semiconductor device, are widely used in electronic devices such as computers, mobile phones, and digital cameras. Currently, there are some designs that use fin field effect transistors (FinFETs) as transistor devices of SRAM cells to improve the density and performance of SRAMs. [0003] In FinFET devices, the work function layer is very important for the adjustment of the device. In the process of device preparation, the post-metal gate process is usually used to form the work function layer. In order to meet the different requirements of PMOS devices and NMOS devices for the work function layer, it is often necessary to use For example, in the preparati...

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Problems solved by technology

[0003] In FinFET devices, the work function layer is very important for the adjustment of the device. In the device manufacturing process, the post-metal gate process is usually used to form the work function layer. In order to meet the different requirements of PMOS devices and NMOS devices for the work function layer, it is often necessary Multiple photolithography processes are carried out in the preparation process of the electrode. For example, in the SRAM device preparation process, it is often necessary to prepare a PMOS device as a pull-up transistor (PU) and an NMOS device as a pull-down transistor (PD). Different, after forming the P-type work function layer of the PMOS device, it is usually necessary to form a photoresist to cover the PMOS region through a photolithography process, to protect the P-type work function layer in the PMOS region, and then to etch the NMOS device region The inner P-type work function layer is removed, and then the photoresist is removed. During this process, residual impurities such as polymers will be generated, and these polymer impurities are easily left in the remaining P-type work function layer and diffusion barrier layer, etc. On the film layer, the fluctuation of the work function becomes larger, and the mismatch performance of the device becomes worse, especially for SRAM devices

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