Manufacturing method of FinFET device

Abstract

The invention provides a manufacturing method of a FinFET device. The method includes the following steps: providing a semiconductor substrate having a first region and a second region, wherein the first region includes a plurality of fins and the second region includes a plurality of fins; forming a first doping layer on the semiconductor substrate, wherein the first doping layer covers the second region; executing first annealing treatment; forming a second doping layer on the semiconductor substrate, wherein the second doping layer covers the first region; and executing second annealing treatment. According to the manufacturing method of the FinFET device provided by the invention, the doping of a fin threshold voltage is performed by a solid source doping layer, thereby avoiding outward diffusion of doped ions in subsequent heat treatment process. Meanwhile, the suppression of lateral diffusion of the doped ions can improve the mismatch performance of the device, thereby realizingthe manufacturing of the multi-Vt FinFET device with good performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a FinFET device. Background technique [0002] With the continuous development of semiconductor technology, the improvement of integrated circuit (IC) performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. At present, due to the demand for high device density, high performance, and low cost, the semiconductor industry has advanced to the nanotechnology process node, and the fabrication of semiconductor devices is limited by various physical limits. [0003] As the critical dimensions of semiconductor devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) continue to shrink, short channel effects (SCE) are becoming more and more serious. Compared with existing planar transistors, FinFET (Fin Field Effect Transistor) has superior performance in terms of channel c...

AI Technical Summary

Problems solved by technology

[0004] At present, it is necessary to implement multi-threshold voltage (multi-Vt) devices on FinFETs, which is a very big challenge for 3D FinFETs. (multi-Vt) provides a solution, but the threshold voltage sensitivity of the multi-threshold voltage (multi-Vt) FinFET device prepared by the prior art is low, and as the fin width shrinks, especially when it is less than 10nm, doping ( doping loss) loss problem becomes more and more serious

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