The invention discloses a double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave and relates to the field of optoelectronic devices. The structure comprises a lower metal electrode, an n-type substrate, a lower distributed feedback Bragg reflector, an n-type phase matching layer, a gain area, a p-type phase matching layer, an upper distributed feedback Bragg reflector, a passivation layer and an upper metal electrode which are sequentially arranged from bottom to top; the structure is characterized in that the length d of a laser resonance cavity is formed by the optical thickness of the n-type phase matching layer, the optical thickness of the gain area, the optical thickness of the p-type phase matching layer, and energy transmission depth of laser in the lower distributed feedback Bragg reflector and the upper distributed feedback Bragg reflector; the length d of the resonance cavity is required to meet the equation as follows: d=c/2omega; if the omega is greater than 0.1THz and smaller than 10THz, the terahertz wave is generated; if the omega is greater than 300MHz and smaller than 300GHz, the microwave is generated. Compared with the existing terahertz light source, the double-resonance vertical-cavity surface-emitting laser structure for generating the terahertz wave and the microwave has the advantages of integration, miniaturization, working at room temperature and easiness in formation of two-dimensional arrays.