Force/magnetism multifunctional sensor

A sensor and multi-functional technology, applied in the field of sensors, to achieve the effects of small size, improved accuracy, and improved sensitivity

Active Publication Date: 2016-05-25
涿州方方电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the rapid development of science and technology, sensor technology has received much attention, but a single physical quantity sensor can no longer meet the needs of industrial production, aerospace and other

Method used

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  • Force/magnetism multifunctional sensor

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Example Embodiment

[0087] The present invention will be described in detail below, and the features and advantages of the present invention will become clearer and clearer with these descriptions.

[0088] The dedicated word "exemplary" here means "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" need not be construed as being superior or better than other embodiments. Although various aspects of the embodiments are shown in the drawings, unless otherwise noted, the drawings are not necessarily drawn to scale.

[0089] According to the present invention, a force / magnetic multifunctional sensor is provided, such as figure 1 As shown, it includes a first cantilever beam (Beam1) for detecting an applied magnetic field, and a second cantilever beam (Beam2) for detecting an applied force. The first cantilever beam includes a first thin film transistor TFT1, a second thin film transistor TFT2, a third thin film transistor TFT3, a fourth thin film transis...

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Abstract

The invention discloses a force/magnetism multifunctional sensor. The force/magnetism multifunctional sensor includes a first cantilever beam 1 for detecting an applied magnetic field, a magnetic material 3 at the top end of the cantilever beam, a second cantilever beam 2 for detecting the applied force, a silicon mass block 4 at the top end of the cantilever beam, a first Wheatstone bridge which is formed by a first thin film transistor TFT1 channel equivalent resistor R1, a second thin film transistor TFT2 channel equivalent resistor R2, a third thin film transistor TFT3 channel equivalent resistor R3 and a fourth thin film transistor TFT4 channel equivalent resistor R4 and is used for realizing detection of a magnetic field, and a second Wheatstone bridge which is formed by a fifth thin film transistor TFT1' channel equivalent resistor R1', a sixth thin film transistor TFT2' channel equivalent resistor R2', a seventh thin film transistor TFT3' channel equivalent resistor R3' and an eighth thin film transistor TFT4' channel equivalent resistor R4' and is used for realizing detection of force. The force/magnetism multifunctional sensor has the advantages of being small in volume, being low in cost, being high in accuracy, and being high in stability.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a force / magnetic multifunctional integrated sensor. Background technique [0002] With the rapid development of science and technology, sensor technology has received much attention, but a single physical quantity sensor can no longer meet the needs of industrial production, aerospace and other fields. Functional sensitive elements can measure multiple physical quantities at the same time. This kind of force / magnetic multifunctional sensor has the advantages of small size, light weight and integration. [0003] The patent number is CN201420085249.2 The utility model relates to a temperature, humidity and air pressure integrated sensor, including a circuit board, on which a temperature sensor, a humidity sensor, a signal processing circuit, a temperature sensor, a humidity sensor and a pressure sensor are arranged The output terminals of both are connected to the input terminals ...

Claims

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Application Information

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IPC IPC(8): G01D21/02B81B7/00
CPCB81B7/0009G01D21/02
Inventor 赵晓锋杨向红温殿忠
Owner 涿州方方电子科技有限公司
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