Double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave

A vertical cavity surface emission, terahertz technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., to achieve the effect of improving luminous efficiency and improving the uniformity of current expansion

Inactive Publication Date: 2015-06-03
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] Aiming at the problems of the existing terahertz wave or microwave light source, the object of the present invention is to provide a structure based on a semiconductor vertical cavity surface emitting laser, whi...

Method used

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  • Double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave
  • Double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave
  • Double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave

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Embodiment

[0040] Figure 4 It is a schematic diagram of the manufacturing process of a dual-resonance vertical-cavity surface-emitting laser for generating terahertz waves or microwaves based on a 980nm GaAs-based substrate according to an embodiment of the present invention.

[0041] Step 1: Using the metal organic chemical vapor deposition method to sequentially grow epitaxial wafers, on the n-type GaAs substrate 2, sequentially grow 36 pairs of Al 0.12 Ga 0.88 As / Al 0.9 Ga 0.1 Distributed Bragg reflector 3 under As, n-type Al 0.3 Ga 0.7 As phase matching layer 4, 3 pairs of GaAs 0.92 P 0.08 (4nm) / Ga 0.83 In 0.17 As(6nm) strained quantum well gain region 5 and p-type Al 0.3 Ga 0.7 The As phase matching layer 6 constitutes an optical thickness of 12λ. The distributed feedback Bragg reflector 7 consists of 23.5 pairs of Al 0.9 Ga 0.1 As / Al 0.12 Ga 0.88 Composed of As, there is 30nm Al between the upper distributed feedback Bragg reflector 7 and the gain region 5 0.98 Ga ...

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Abstract

The invention discloses a double-resonance vertical-cavity surface-emitting laser structure for generating terahertz wave and microwave and relates to the field of optoelectronic devices. The structure comprises a lower metal electrode, an n-type substrate, a lower distributed feedback Bragg reflector, an n-type phase matching layer, a gain area, a p-type phase matching layer, an upper distributed feedback Bragg reflector, a passivation layer and an upper metal electrode which are sequentially arranged from bottom to top; the structure is characterized in that the length d of a laser resonance cavity is formed by the optical thickness of the n-type phase matching layer, the optical thickness of the gain area, the optical thickness of the p-type phase matching layer, and energy transmission depth of laser in the lower distributed feedback Bragg reflector and the upper distributed feedback Bragg reflector; the length d of the resonance cavity is required to meet the equation as follows: d=c/2omega; if the omega is greater than 0.1THz and smaller than 10THz, the terahertz wave is generated; if the omega is greater than 300MHz and smaller than 300GHz, the microwave is generated. Compared with the existing terahertz light source, the double-resonance vertical-cavity surface-emitting laser structure for generating the terahertz wave and the microwave has the advantages of integration, miniaturization, working at room temperature and easiness in formation of two-dimensional arrays.

Description

technical field [0001] The invention relates to the structure and preparation method of a vertical cavity surface-emitting laser in the field of optoelectronic devices, in particular to a structure and a preparation method of a double-resonance vertical cavity surface-emitting laser for generating terahertz waves or microwaves. Background technique [0002] Terahertz (THz for short) waves usually refer to electromagnetic waves with a frequency of 0.1THz to 10THz. This frequency band is at the intersection of electronics and photonics in the electromagnetic spectrum. Known as the "THz blank". At present, terahertz wave technology is too complex and expensive, especially the problem of terahertz wave radiation source, which limits the wide application of terahertz wave technology. [0003] The microwave frequency ranges from 300MHz to 300GHz, and is widely used in radars, microwave ovens, plasma generators, wireless network systems, and sensor systems. [0004] According to ...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/06
Inventor 郭霞刘白李冲
Owner BEIJING UNIV OF TECH
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