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Thin sacrificial masking films for protecting semiconductors from pulsed laser process

A pulsed laser and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, and electric solid-state devices, etc., can solve the problems of incapable of rapid changes in mask design, expensive masks, and complex manufacturing.

Inactive Publication Date: 2011-06-15
SIONYX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Masks of this type are expensive, and mask designs cannot be changed quickly due to the manufacturing complexity of the dielectric stack reflectors that typically sit on top of the substrate
This problem is especially prominent in the case of large production

Method used

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  • Thin sacrificial masking films for protecting semiconductors from pulsed laser process
  • Thin sacrificial masking films for protecting semiconductors from pulsed laser process
  • Thin sacrificial masking films for protecting semiconductors from pulsed laser process

Examples

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Embodiment Construction

[0024] As mentioned above, many applications in various industries would benefit from new, redesigned and more versatile photodetection devices, such as more sensitive photodetection semiconductor devices and photodetection semiconductors that can operate in previously unknown domains device. These devices and systems using the devices can develop new applications, uses and market prospects for the devices and systems using the devices.

[0025] Some embodiments of systems that use laser-enhanced photodetection of semiconductor components include those that sense and provide a substantial electrical response to photon radiation (brightness), which may be in the visible portion of the electromagnetic spectrum or outside the visible portion of the electromagnetic spectrum. Rather than using separate detectors for each of the visible and invisible radiation, these embodiments detect the visible and invisible (e.g., infrared) radiation using a single detector device, and detect t...

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PUM

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Abstract

The present disclosure is directed to systems and methods for protecting a semiconductor product or material from harmful effects of pulsed laser irradiation. In some embodiments, a thin sacrificial protective mask layer that expires after one laser processing operation is applied to the surface of the product or material to be laser-treated. The thin protective mask layer reflects, absorbs, or otherwise protects the underlying product or material from the energy of the laser.

Description

technical field [0001] The following disclosure relates to the use of masks to protect semiconductor product circuits and components from laser light, including the pulsed laser light used in doping the semiconductor. Background technique [0002] Semiconductor devices, assemblies and components, including optical and light detecting varieties, are beginning to find their way into a wider and wider range of home, laboratory, commercial, industrial, scientific, medical, communications and military applications. Applications using light-detecting semiconductors extend from missile defense to children's toys. The basic P-N junction and PIN diode have been adapted and extended to enable the realization of semiconductor-based photodiodes, photodetectors, photoconductors, charge-coupled devices, photomultipliers, etc., given that many of these devices can detect photons The activities of these devices are collectively referred to as photodetection semiconductor devices in the pre...

Claims

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Application Information

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IPC IPC(8): H01L21/225H01L21/268H01L27/144H01L27/146B23K26/00B23K26/066
CPCH01L27/14643H01L21/2254H01L27/1443H01L21/268H01L27/14649
Inventor J·凯里
Owner SIONYX
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