A surface treatment method of a gallium arsenide substrate

Abstract

A surface treatment method of a gallium arsenide (GaAs) substrate comprises the following steps: (1) thinning the GaAs substrate; 2) uniformly applying pulsed laser to the surface of the GaAs substrate; (3) cleaning the GaAs substrate after pulsed laser irradiation with deionized water; (4) drying the deionized water washed GaAs substrate with hot nitrogen to obtain a clean GaAs substrate. This method is simple, high proces efficiency, without the introduction of irritant chemicals, with the aid of a pulsed laser, deionized water and hot nitrogen can clean the surface of GaAs substrate, The surface of the treated GaAs substrate is free of organic matter and impurity particles, which ensures the quality of interface contact after subsequent metal evaporation, prevents electrode dropping anddevice voltage abnormality, improves product yield and device performance, ensures surface cleanliness to the maximum extent, and improves production efficiency.

Description

technical field [0001] The invention relates to a surface treatment method of a gallium arsenide substrate used for LED and / or LD, and belongs to the technical field of material processing. Background technique [0002] Gallium arsenide, as an important III-V direct band gap compound semiconductor material, has been widely used in the field of microelectronics and optoelectronic devices due to its high electron mobility, large band gap, and low power consumption. Gallium arsenide is currently the largest, most widely used, and most important compound semiconductor material next to semiconductor silicon. It has shown great development potential in microwave devices and light-emitting devices, especially the current red LED and LD devices. Gallium arsenide is still the mainstream substrate material. [0003] In view of the important application of gallium arsenide substrate in red LED and LD devices, its surface treatment is particularly important, which directly affects the ...

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Problems solved by technology

[0004] At present, the common surface treatment method of gallium arsenide substrate is chemical cleaning or etching to remove pollutants, impurities, organic matter, oxide film, etc. on the surface of the substrate. This method often takes a relatively long time and requires a certain temperature, chemical Reagents, even special equipment and processes, are not conducive to energy saving, emission reduction and production efficiency improvement

[0005] Chinese patent document CN1079579C discloses a semiconductor substrate cleaning method and a semiconductor device manufacturing method. This method mainly immerses the substrate in pure water with a low dissolved oxygen concentration above 60°C. The chemical oxide film on the surface of the substrate cannot guarantee the complete cleanliness of the substrate surface, and the process includes a variety of equipment components, the treatment effect and efficiency are not high, it is a simple surface treatment method

[0006] CN104518056A discloses a method for preparing a reverse polarity red light LED, in which the gallium arsenide substrate corrosion method involved adopts an ammonia solution for corrosion, and the corrosion rate of this method is not easy to control, and the phenomenon of dirty corrosion is easy to occur

[0007] CN105382676A discloses a gallium arsenide wafer polishing method, which is realized by an oxidizing agent, a reducing agent and a mechanical polishing machine. The polishing method is mainly used in materials or devices with high requirements on surface flatness and roughness, and is not suitable for red The polishing of light LED gallium arsenide substrate is also not conducive to improving production efficiency

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