Chemical mechanical polishing method for wafer planarization production

Abstract

The invention relates to a chemical mechanical polishing method for wafer planarization production. The method comprises the following steps of providing a chemical mechanical polishing machine; putting a wafer to be polished into a loading platform; when the wafer enters into a first polishing platform, using first selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount; when the wafer enters into a second polishing platform, using second selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount, wherein the second selection ratio is larger than the first selection ratio; when the wafer enters into a third polishing platform, using high selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount; washing; conveying the wafer to an unloading platform. Two batches of wafer products are pre-produced, and a corresponding polishing amount is established in an advanced process control system according to the corresponding relation between front amount and rear amount. According to the chemical mechanical polishing method for wafer planarization production provided by the invention, on the premise of ensuring the product quality, the production efficiency of CMP (Chemical Mechanical Polishing) is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method used for planarization production of shallow trench isolation regions of wafers. Background technique [0002] In wafer manufacturing, with the upgrading of process technology and the reduction of wire and gate size, photolithography technology has higher and higher requirements for the flatness of wafer surface. After 1995, chemical mechanical polishing (CMP) technology has been developed rapidly and widely used in the semiconductor industry. CMP is also called chemical mechanical polishing, and its principle is a processing technology that combines chemical corrosion and mechanical removal. Chemical mechanical polishing technology combines the advantages of chemical polishing and mechanical polishing. Pure chemical grinding has high surface accuracy, low damage, good integrity, and is not prone to surface / subsurface damage, but...

AI Technical Summary

Problems solved by technology

[0003] Currently commonly used chemical mechanical grinding machines, such as the 8-inch factory model MIRRA3400, have 3 grinding platforms (platen) and 4 grinding heads (Head). The production method adopted is that grinding platforms 1 and 2 are used for grinding, and grinding platform 3 is used. For surface cleaning (Buffing), this grinding method does not maximize the output of the CMP machine

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