Chemical mechanical polishing method for wafer planarization production

A technology of chemical machinery and grinding methods, applied in grinding devices, grinding machine tools, electrical components, etc., can solve the problem of not maximizing the output of CMP machines, and achieve the effect of improving production efficiency

Inactive Publication Date: 2015-11-25
HEJIAN TECH SUZHOU
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Problems solved by technology

[0003] Currently commonly used chemical mechanical grinding machines, such as the 8-inch factory model MIRRA3400, have 3 grinding platforms (platen) and 4 grinding heads (Head). The production method

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  • Chemical mechanical polishing method for wafer planarization production

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] The principle of chemical mechanical polishing is to place the wafer between the carrier and a rotating table carrying a polishing pad (grinding pad) on the surface, and simultaneously immerse it in an acidic or alkaline solution containing suspended abrasives, oxidants, and activators. , the wafer moves relative to the polishing pad (grinding pad), and the planarization of the wafer is achieved under the interaction of the two material removal mechanisms of chemical etching and grinding.

[0027] Usually, chemical mechanical polishing equipment is mainly composed of several parts, one is th...

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Abstract

The invention relates to a chemical mechanical polishing method for wafer planarization production. The method comprises the following steps of providing a chemical mechanical polishing machine; putting a wafer to be polished into a loading platform; when the wafer enters into a first polishing platform, using first selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount; when the wafer enters into a second polishing platform, using second selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount, wherein the second selection ratio is larger than the first selection ratio; when the wafer enters into a third polishing platform, using high selection ratio polishing fluid to polish according to scheduled polishing time and polishing amount; washing; conveying the wafer to an unloading platform. Two batches of wafer products are pre-produced, and a corresponding polishing amount is established in an advanced process control system according to the corresponding relation between front amount and rear amount. According to the chemical mechanical polishing method for wafer planarization production provided by the invention, on the premise of ensuring the product quality, the production efficiency of CMP (Chemical Mechanical Polishing) is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method used for planarization production of shallow trench isolation regions of wafers. Background technique [0002] In wafer manufacturing, with the upgrading of process technology and the reduction of wire and gate size, photolithography technology has higher and higher requirements for the flatness of wafer surface. After 1995, chemical mechanical polishing (CMP) technology has been developed rapidly and widely used in the semiconductor industry. CMP is also called chemical mechanical polishing, and its principle is a processing technology that combines chemical corrosion and mechanical removal. Chemical mechanical polishing technology combines the advantages of chemical polishing and mechanical polishing. Pure chemical grinding has high surface accuracy, low damage, good integrity, and is not prone to surface / subsurface damage, but...

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Application Information

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IPC IPC(8): B24B37/04B24B37/34H01L21/304
Inventor 李杨
Owner HEJIAN TECH SUZHOU
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