Crystal support for polycrystalline silicon ingot
By adopting a pneumatic support column structure in the polycrystalline silicon ingot crystal support, adjusting the support column height to maintain the level of the silicon ingot, the square opening risks and efficiency problems caused by unevenness of the head of the silicon ingot is solved, and a safer and more efficient polycrystalline silicon ingot treatment is achieved. process.
Patent Information
- Application Number
- CN202420211988.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-29
- Publication Date
- 2024-12-27
- Estimated Expiration
- 2034-01-29
AI Technical Summary
The existing polycrystalline silicon ingot crystal retention is unstable when the head of the silicon ingot is uneven, resulting in high safety risks during the square cutting process and the crystal direction of the silicon wafer is not on the same plane, affecting efficiency.
The pneumatic support column structure is adopted to control the height of the support column through ventilation pipes and regulating valves to ensure that the silicon ingot is in a horizontal state and reduce the risk of square opening.
It can maintain a horizontal state no matter how uneven the surface of the silicon ingot is, which reduces the safety risks during the square preparation process and improves the flatness and production efficiency of the silicon wafer.
Smart Images
Figure CN222245490U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of polysilicon production equipment, and particularly relates to a crystal tray for polysilicon ingots. Background Art
[0002] As the quality of polycrystalline materials becomes worse and worse, more and more impurities are accumulated at the head of the silicon ingot, especially for low-efficiency multicrystalline silicon wafers and imitation single crystal silicon wafers. The head of the silicon ingot is uneven due to frozen silicon caused by impurities. It is very difficult to square the head of the silicon ingot. In this case, the silicon ingot needs to be turned over first, and then squared from the bottom. The existing crystal trays have certain risks in dealing with this situation, mainly as follows: because the impurities at the head of the silicon ingot cause frozen silicon to cause the head of the silicon ingot to be uneven, the silicon ingot cannot stand steadily after being turned over, and it can only be fixed with foam glue after being cushioned by crucible fragments, which poses a great safety risk; in addition, the uneven silicon ingot will be tilted to a certain extent when placed on the crystal tray, and the silicon block cut out will also be tilted, resulting in the crystal orientation of the silicon wafer not being in the same plane, affecting the efficiency of the silicon wafer. Summary of the invention
[0003] The technical problem to be solved by the utility model is to provide a crystal tray for polycrystalline silicon ingots. The utility model changes the structure of the traditional crystal tray for polycrystalline silicon ingots, and replaces the fixed support column with a pneumatic one that can be raised and lowered, thereby ensuring that no matter how uneven the surface of the silicon ingot is, the silicon ingot can be kept in a horizontal state by adjusting the support column.
[0004] In order to solve the above technical problems, the technical solution adopted by the utility model is:
[0005] A crystal tray for polycrystalline silicon ingots includes a crystal tray body, the crystal tray body is provided with a support column, the top of the support column is provided with a support column table, the support column is a hollow structure, the support column base and the support column table of the support column are a split structure, the support column table is slidably connected to the support column base; a plurality of support column bases are connected by a ventilation duct, the ventilation duct is supplied with air by a main air pipe, and a regulating valve is provided on the ventilation duct, and each regulating valve corresponds to a support column base.
[0006] Preferably, the crystal tray body includes seven columns of support columns, wherein the three middle columns form a group, and the two columns on both sides of the crystal tray body form a group respectively; in each group of support columns, the support column bases in the same row are connected by ventilation ducts.
[0007] Preferably, a main switch valve is provided on the main gas pipe.
[0008] The utility model can achieve the following beneficial effects:
[0009] When the improved crystal tray is placed on an uneven silicon ingot, the support column can be ventilated or deflated through a pneumatic valve to adjust the height of the support column, so that the upper surface of the silicon ingot placed on the crystal tray is level and will not affect the cutting of the silicon ingot.
[0010] 1. The utility model changes the structure of the traditional polysilicon ingot crystal support, and replaces the fixed support column with a pneumatic one that can be raised and lowered, thereby ensuring that no matter how uneven the surface of the silicon ingot is, the silicon ingot can be kept in a horizontal state by adjusting the support column.
[0011] 2. The pneumatic valve control method is used to lift the support column to keep the silicon ingot opening level, so that the opening section is no longer affected by the surface of the silicon ingot, reducing the safety risk of the opening section; the ventilation duct is integrated into the original structure of the crystal tray without changing the original structure of the crystal tray. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] The utility model is further described below in conjunction with the accompanying drawings and embodiments:
[0013] Figure 1 This is a cross-sectional view of the utility model;
[0014] Figure 2 It is a top view of the utility model;
[0015] Figure 3 This is a structural diagram of a crystal tray used in existing polysilicon ingots.
[0016] In the figure: support column table 1, support column base 2, ventilation pipe 3, main air pipe 4, regulating valve 5, forklift arm hole 6, crystal support base 7, fixed card slot 8, regulating valve 9, square machine wire slot hole 10, pin fixing platform 11. DETAILED DESCRIPTION
[0017] The preferred solution is Figure 1 to Figure 2 As shown, a crystal tray for polycrystalline silicon ingots includes a crystal tray body, the crystal tray body is provided with a support column, and a support column table 1 is provided on the top of the support column; the existing support column is solid, and the support column table 1 is not adjustable; the crystal tray body also includes a forklift arm hole 6, a crystal tray base 7 and a fixed card slot 8; the improved structure of the utility model is as follows:
[0018] The support column is a hollow structure. The support column base 2 and the support column table 1 of the support column are split structures. The support column table 1 is slidably connected to the support column base 2. The multiple support column bases are connected through a ventilation pipe 3, and the ventilation pipe 3 is supplied with air by the main air pipe 4. The ventilation pipe 3 is provided with a regulating valve 5, and each regulating valve 9 corresponds to a support column base 2. The support column table 1 can move up and down, and the regulating valve 9 is used to adjust the air pressure in the support column base 2 and to adjust the height of the support column table 1. The main air pipe 4 is provided with a main switch valve to control the on and off of the entire air source.
[0019] The crystal support body includes seven columns of support columns, wherein the three columns in the middle form a group, and the two columns on both sides of the crystal support body form a group respectively; in each group of support columns, the support column bases 2 in the same row are connected through the ventilation duct 3. Specifically, as Figure 2 As shown, the support columns of the crystal holder are divided into three groups, which are grouped in 2-3-2 and share a main ventilation pipe.
[0020] The above embodiments are only preferred technical solutions of the present invention and should not be regarded as limitations of the present invention. The protection scope of the present invention shall be the technical solutions recorded in the claims, including equivalent replacement solutions of the technical features in the technical solutions recorded in the claims. That is, equivalent replacement improvements within this scope are also within the protection scope of the present invention.
Claims
1. A crystal tray for a polycrystalline silicon ingot, comprising a crystal tray body, the crystal tray body is provided with a support column, and the top of the support column is provided with a support column table (1), characterized in that: The support column is a hollow structure, and the support column base (2) and the support column table (1) of the support column are split structures, and the support column table (1) is slidably connected to the support column base (2); a plurality of support column bases are connected via a ventilation pipe (3), and the ventilation pipe (3) is supplied with air by a main air pipe (4). A regulating valve (5) is provided on the ventilation pipe (3), and each regulating valve corresponds to a support column base (2).
2. The pedestal for polycrystalline silicon ingots according to claim 1, characterized in that: The crystal support body comprises seven columns of support pillars, wherein the three columns of support pillars in the middle form a group, and the two columns of support pillars on both sides of the crystal support body form a group respectively; in each group of support pillars, the support pillar bases (2) in the same row are connected via a ventilation duct (3).
3. The pedestal for polycrystalline silicon ingot according to claim 1, characterized in that: A main on-off valve is provided on the main gas pipe (4).