Semiconductor power generation sheet

By introducing fan frame, thermal base and electric heating ring into semiconductor power generation sheets, the problem that the refrigeration sheet cannot continuously dissipate heat is solved, and efficient heat dissipation and power generation efficiency of the refrigeration sheets are achieved, avoiding safety risks.

CN222283847UActive Publication Date: 2024-12-31江苏奇斯灵电子科技有限公司
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Patent Information

Application Number
CN202421082002.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-17
Publication Date
2024-12-31
Estimated Expiration
2034-05-17

AI Technical Summary

Technical Problem

When semiconductor refrigeration sheets cannot continuously dissipate heat, they will lead to reduced refrigeration efficiency, reduced working efficiency, and may cause safety problems such as overheating and fire.

Method used

A semiconductor power generator is designed, including a fan frame, a thermal base, a heat discharge tank, a heat dissipation tank and a heat dissipation grid. The heat dissipation tank is connected by a built-in heat dissipation fan and a heat dissipation tank of the fan frame, and the heat conduction base and an electric heating ring are used to maintain the refrigeration plate. Continuous heating and heating ensure the sustainability of the temperature difference effect.

Benefits of technology

It effectively improves the heat dissipation ability of semiconductor refrigeration sheets, ensures their continuous operation, avoids overheating, improves refrigeration efficiency and power generation effect, and reduces safety risks.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a semiconductor power generation sheet, which comprises a fan frame and a heat conduction base, the inner side of the fan frame is provided with a heat discharge groove used for discharging hot air released by a heat release end of a semiconductor chilling plate, and the lower end of the heat discharge groove is provided with a heat dissipation groove used for expanding the heat dissipation area of the heat release end of the semiconductor chilling plate. The lower end of the semiconductor chilling plate is provided with a heat dissipation groove, and the outer side of the heat dissipation groove is provided with a heat dissipation grating used for conducting heat of the heat release end of the semiconductor chilling plate. Heat energy generated in the refrigeration process of the semiconductor refrigeration sheet is discharged through the heat discharge groove and the heat dissipation groove, power generation potential energy is transmitted through the wire through the refrigeration sheet body, and electron drift current and hole drift current are formed by achieving the temperature difference of the P end and the N end. The heat conduction base is used for continuously heating the heated end, so that the continuous temperature difference effect is kept.
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Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor power generation and relates to a semiconductor power generation sheet. Background Art

[0002] A semiconductor power generator is a power generation device made of a semiconductor refrigerator, also known as a semiconductor temperature difference power generator. This power generator uses the thermoelectric effect of a semiconductor refrigerator to convert thermal energy into electrical energy. A semiconductor power generator is usually composed of two different types of semiconductor refrigerators, which are connected together to form a loop. When there is a temperature difference between the two ends of this loop, the thermoelectric effect will generate an electromotive force in the semiconductor refrigerator, thereby generating an electric current. If the semiconductor refrigerator cannot be continuously heated or cooled during the thermoelectric reaction, the following problems may occur:

[0003] The efficiency of a semiconductor refrigerator is closely related to the heat dissipation effect of its hot surface. If the heat dissipation of the hot surface is poor, the temperature of the cold surface is difficult to reduce, and the cooling effect will be greatly reduced. Similarly, if the refrigerator cannot continue to cool, its working efficiency will be significantly reduced, and the power generation effect of the thermoelectric reaction will be directly reduced.

[0004] If the semiconductor cooling chip cannot dissipate heat for a long time, it may cause overheating. Overheating will not only reduce the cooling efficiency, but also damage the cooling chip and even cause safety problems such as fire. Therefore, a semiconductor power generation chip is urgently needed to solve the above problems. Utility Model Content

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a semiconductor power generation chip to solve the problems raised in the above-mentioned background technology.

[0006] The utility model is realized by the following technical scheme: a semiconductor power generation chip, comprising: a fan frame and a heat-conducting base, wherein the inner side of the fan frame is provided with a heat exhaust groove for exhausting the hot air released by the heat-releasing end of the semiconductor refrigeration chip;

[0007] A heat dissipation groove is provided at the lower end of the heat dissipation groove for expanding the heat dissipation area of ​​the heat dissipation end of the semiconductor refrigeration plate, and a heat dissipation grille is provided on the outer side of the heat dissipation groove for heat conduction of the heat dissipation end of the semiconductor refrigeration plate;

[0008] A semiconductor cooling fin is disposed at the lower end of the heat dissipation grille, a heat conducting plate for conducting heat is disposed at the lower end of the semiconductor cooling fin, a heat conducting base for collecting heat is disposed at the lower end of the heat conducting plate, and the lower end of the semiconductor cooling fin can be heated by using the heat conducting base.

[0009] As a preferred embodiment, a heat exhaust fan is provided inside the fan frame, the interior of the heat exhaust fan is interconnected with the interior of the heat exhaust groove, the interior of the heat exhaust groove is interconnected with the interiors of several groups of heat dissipation grooves, and the heat energy generated during the refrigeration process of the semiconductor refrigeration plate can be discharged by using the heat exhaust groove and the heat dissipation groove.

[0010] As a preferred embodiment, the cross section of the heat dissipation grille is a rectangular structure, the heat dissipation grille is made of an aluminum alloy material, and the lower end surface of the heat dissipation grille is completely in contact with the upper end of the semiconductor refrigeration plate.

[0011] As a preferred embodiment, the semiconductor refrigeration plate includes protective silica gel, a refrigeration end, a refrigeration plate body, a heating end and a wire. The lower end of the protective silica gel is provided with a refrigeration end for the refrigeration plate body, and the lower end of the refrigeration end is provided with a refrigeration plate body.

[0012] As a preferred embodiment, a heat receiving end for semiconductor power generation operation is provided at the lower end of the refrigeration plate body, and a wire for conducting generated electric energy is provided on the left side of the refrigeration plate body. The wire is connected to an external USB power module and an external battery, and the generated electric potential energy can be transmitted through the wire by using the refrigeration plate body.

[0013] As a preferred embodiment, the cooling end is made of a Pin-type semiconductor device, and the heating end is made of a NIP-type semiconductor device. The outer sides of the heating end and the cooling end are both provided with a group of protective silicone bonding connections, which can form electron drift current and hole drift current by realizing the temperature difference between the P end and the N end.

[0014] As a preferred embodiment, the thermally conductive base includes a thermally conductive base and a heating base, the thermally conductive base is provided with an insert mold for interlocking with an electric heating ring on the outer side, the insert mold is provided with an electric heating ring for improving the heating effect, and a heating base for continuously heating the heated end is provided at the middle position on the inner side of the thermally conductive base. The heated end can be continuously heated by using the thermally conductive base, thereby maintaining a continuous temperature difference effect.

[0015] After adopting the above technical scheme, the beneficial effects of the utility model are: by using a heat-conducting base to heat the lower end of the semiconductor refrigeration plate, by using a heat dissipation groove and a heat dissipation groove to discharge the heat energy generated during the refrigeration process of the semiconductor refrigeration plate, by using the refrigeration plate body to transmit the power generation potential energy through the wire, by realizing the temperature difference between the P end and the N end to form an electron drift current and a hole drift current, by using the heat-conducting base to continuously heat the heated end, thereby maintaining a continuous temperature difference effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 This is a schematic diagram of a semiconductor power generation chip of the utility model, viewed from the top from the left oblique side;

[0018] Figure 2 This is a schematic diagram of the front side structure of a semiconductor power generation chip of the utility model;

[0019] Figure 3 This is a front view structural diagram of a semiconductor cooling sheet in a semiconductor power generation sheet of the utility model;

[0020] Figure 4 This is a front view structural diagram of the inside of a side pad in a semiconductor power generation sheet of the utility model;

[0021] In the figure: 100 - fan frame, 110 - heat exhaust slot, 120 - heat dissipation grille, 130 - heat dissipation slot, 140 - semiconductor cooling sheet, 150 - heat conduction plate, 160 - heat conduction base;

[0022] 14a-protective silica gel, 14b-cooling end, 14c-cooling plate body, 14d-heating end, 14e-conducting wire;

[0023] 16a-heat conducting seat, 16b-embedded mold, 16c-electric heating ring, 16d-heating base. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0025] See also Figure 1-Figure 4 A semiconductor power generation chip includes: a fan frame 100, a semiconductor cooling chip 140 and a heat-conducting base 160, wherein a heat exhaust groove 110 is provided inside the fan frame 100 for exhausting the hot air released from the heat-releasing end of the semiconductor cooling chip 140;

[0026] A heat dissipation groove 130 is provided at the lower end of the heat dissipation groove 110 for expanding the heat dissipation area of ​​the heat dissipation end of the semiconductor cooling plate 140, and a heat dissipation grille 120 is provided outside the heat dissipation groove 130 for heat conduction at the heat dissipation end of the semiconductor cooling plate 140;

[0027] A semiconductor cooling sheet 140 is provided at the lower end of the heat dissipation grille 120. A heat conducting plate 150 for conducting heat is provided at the lower end of the semiconductor cooling sheet 140. A heat conducting base 160 for collecting heat is provided at the lower end of the heat conducting plate 150. The heat conducting base 160 can be used to heat the lower end of the semiconductor cooling sheet 140.

[0028] A heat exhaust fan is provided inside the fan frame 100, and the interior of the heat exhaust fan is interconnected with the interior of the heat exhaust groove 110, and the interior of the heat exhaust groove 110 is interconnected with the interiors of several groups of heat dissipation grooves 130. The heat energy generated during the cooling process of the semiconductor refrigeration plate 140 can be discharged by using the heat exhaust groove 110 and the heat dissipation groove 130.

[0029] The cross section of the heat dissipation grille 120 is a rectangular structure. The heat dissipation grille 120 is made of an aluminum alloy material, and the lower end surface of the heat dissipation grille 120 is completely in contact with the upper end of the semiconductor cooling plate 140 .

[0030] The semiconductor cooling sheet 140 includes a protective silicone 14a and a wire 14e. A cooling end 14b for a cooling sheet body 14c is disposed at the lower end of the protective silicone 14a. The cooling sheet body 14c is disposed at the lower end of the cooling end 14b.

[0031] A heat receiving end 14d for semiconductor power generation is provided at the lower end of the refrigeration plate body 14c, and a wire 14e for conducting generated electrical energy is provided on the left side of the refrigeration plate body 14c. The wire 14e is connected to an external USB power module and an external battery, and the generated electrical potential energy can be transmitted through the wire 14e by using the refrigeration plate body 14c.

[0032] The cooling end 14b is made of a Pin-type semiconductor device, and the heating end 14d is made of a NIP-type semiconductor device. The outsides of the heating end 14d and the cooling end 14b are both provided with a group of protective silicone 14a for bonding connection, which can form electron drift current and hole drift current by realizing the temperature difference between the P end and the N end.

[0033] The heat-conducting base 160 includes a heat-conducting base 16a, an embedded mold 16b, an electric heating ring 16c and a heating base 16d. The heat-conducting base 16a is provided with an embedded mold 16b for use in conjunction with the electric heating ring 16c on the outside, and the embedded mold 16b is provided with an electric heating ring 16c for improving the heating effect. A heating base 16d for continuously heating the heated end 14d is provided in the middle position of the inner side of the heat-conducting base 16a. The heat-conducting base 160 can be used to continuously heat the heated end 14d, thereby maintaining a continuous temperature difference effect.

[0034] See also Figure 1-Figure 4 As the first embodiment of the utility model: In order to solve the problem that if the refrigeration plate cannot continue to cool, its working efficiency will be significantly reduced, and the power generation effect of the thermoelectric reaction will be directly reduced, firstly, since the cooling end 14b is made of a Pin-type semiconductor device, the heating end 14d is made of a NIP-type semiconductor device, the outer sides of the heating end 14d and the cooling end 14b are both provided with a group of protective silica gel 14a for bonding connection, because the cooling end 14b and the heating end 14d simultaneously generate a temperature difference effect, and a PN junction is formed by using a Pin-type semiconductor device and a NIP-type semiconductor device. When PN junctions exist at the same time, the electron concentration of the N-type is large and moves to the P-type side, causing the electrons to be enriched in the P-type material and showing a negative charge; similarly, the hole concentration of the P-type is large and moves to the N-type side, causing the holes to be enriched in the N-type material and showing a positive charge; in this way, the built-in electric field is formed and the power generation process is completed. When the refrigeration plate is continuously cooling, an electric heating ring 16c is provided inside the embedded mold 16b to improve the heating effect, and a heating base 16d is provided in the middle position of the inner side of the heat conducting seat 16a to continuously heat the heated end 14d. Several groups of electric heating rings 16c can effectively perform continuous heating operations.

[0035] See also Figure 1-Figure 4 , as the second embodiment of the utility model: based on the description in the above embodiments, further, since a heat exhaust fan is provided inside the fan frame 100, the interior of the heat exhaust fan is interconnected with the interior of the heat exhaust groove 110, and the interior of the heat exhaust groove 110 is interconnected with the interiors of several groups of heat dissipation grooves 130. When the semiconductor refrigeration plate 140 operates for a long time, the heat release end of the semiconductor refrigeration plate 140 can be quickly discharged through the heat dissipation grille 120 and the heat exhaust fan, thereby ensuring that the semiconductor refrigeration plate 140 can continue to operate.

[0036] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor power generation chip, comprising: A fan frame (100), a semiconductor cooling sheet (140) and a heat-conducting base (160), characterized in that a heat dissipation groove (110) for discharging hot air released from a heat-dissipating end of the semiconductor cooling sheet (140) is provided on the inner side of the fan frame (100); A heat dissipation groove (130) for expanding the heat dissipation area of ​​the heat dissipation end of the semiconductor cooling plate (140) is provided at the lower end of the heat dissipation groove (110), and a heat dissipation grille (120) for conducting heat at the heat dissipation end of the semiconductor cooling plate (140) is provided on the outer side of the heat dissipation groove (130); A semiconductor cooling sheet (140) is provided at the lower end of the heat dissipation grille (120), a heat conduction plate (150) for conducting heat is provided at the lower end of the semiconductor cooling sheet (140), and a heat conduction base (160) for collecting heat is provided at the lower end of the heat conduction plate (150).

2. A semiconductor power generation chip according to claim 1, characterized in that: A heat exhaust fan is arranged inside the fan frame (100), the interior of the heat exhaust fan is interconnected with the interior of the heat exhaust groove (110), and the interior of the heat exhaust groove (110) is interconnected with the interior of a plurality of groups of heat dissipation grooves (130).

3. The semiconductor power generation chip according to claim 1, characterized in that: The cross section of the heat dissipation grille (120) is a rectangular structure, the heat dissipation grille (120) is made of an aluminum alloy material, and the lower end surface of the heat dissipation grille (120) is completely in contact with the upper end of the semiconductor cooling plate (140).

4. A semiconductor power generation chip according to claim 3, characterized in that: The semiconductor refrigeration sheet (140) comprises a protective silica gel (14a) and a conducting wire (14e); a refrigeration end (14b) for a refrigeration sheet main body (14c) is provided at the lower end of the protective silica gel (14a); and a refrigeration sheet main body (14c) is provided at the lower end of the refrigeration end (14b).

5. A semiconductor power generation chip according to claim 4, characterized in that: A heat receiving end (14d) for performing semiconductor power generation operations is provided at the lower end of the refrigeration plate body (14c), and a wire (14e) for conducting generated electrical energy is provided on the left side of the refrigeration plate body (14c), and the wire (14e) is connected to an external USB power module and an external storage battery.

6. A semiconductor power generation chip according to claim 5, characterized in that: The cooling end (14b) is made of a pin-type semiconductor device, and the heating end (14d) is made of a nip-type semiconductor device. The outer sides of the heating end (14d) and the cooling end (14b) are both provided with a group of protective silicone rubber (14a) for bonding and connection.

7. The semiconductor power generation chip according to claim 1, characterized in that: The heat-conducting base (160) comprises a heat-conducting base (16a) and a heating base (16d); an insert mold (16b) for interlocking with an electric heating ring (16c) is provided on the outside of the heat-conducting base (16a); an electric heating ring (16c) for improving the heating effect is provided inside the insert mold (16b); and a heating base (16d) for continuously heating the heated end (14d) is provided at a middle position inside the heat-conducting base (16a).