Silicon wafer cleaning device

Abstract

The utility model discloses a silicon wafer cleaning device which comprises a cleaning tank and a circulating pipeline, a cleaning cavity is formed in the cleaning tank, and materials to be cleaned are suitable for being placed in the cleaning cavity; the cleaning assembly is arranged in the cleaning cavity and comprises an ultrasonic cleaning part, and the ultrasonic cleaning part can enable cleaning liquid in the cleaning cavity to generate vibration so as to strip hot melting materials on the materials; the first circulating pipeline communicates with the cleaning cavity, and the first circulating pipeline is used for introducing cleaning liquid into the cleaning cavity and discharging mixed liquid of the hot melting material and the cleaning liquid in the cleaning cavity; and the second circulating pipeline communicates with the first circulating pipeline, the second circulating pipeline can introduce a cleaning solution into the cleaning cavity through the first circulating pipeline, and the cleaning solution can dissolve a hot melting material on the to-be-cleaned material. According to the structure, the scraping risk caused by physical contact is reduced, the hot melting material suspended in the cleaning liquid can be continuously removed, and the cleaning efficiency is guaranteed.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon wafer cleaning, in particular to a silicon wafer cleaning device. Background Art

[0002] Semiconductor cleaning is an important process throughout the entire wafer manufacturing process, and the quality of the cleaning process is the key to improving the yield. As the size decreases and the structure becomes more complicated, the sensitivity of the chip to the impurity content also increases accordingly, which directly affects the product yield. Every 1% reduction in yield will cause great losses to customers. The number of cleaning steps accounts for more than 30% of all chip manufacturing steps, and as the node advances, the number and importance of cleaning steps will continue to increase, and the demand for cleaning equipment will also increase accordingly.

[0003] In the silicon wafer processing process, a mask layer needs to be made on the surface of the silicon wafer using hot melt material. After the silicon wafer is processed, the hot melt material attached to the surface of the silicon wafer needs to be removed. The hot melt material removal step is crucial to ensure the cleanliness of the silicon wafer and the quality of the final product. However, the traditional hot melt material removal method usually involves multiple steps, which is not only inefficient, but also uses physical contact to clean the hot melt material on the silicon wafer, which is easy to damage the silicon wafer. Utility Model Content

[0004] Therefore, the technical problem to be solved by the utility model is that the traditional method of removing hot-melt materials usually involves multiple steps, which is not only inefficient, but also uses physical contact to clean the hot-melt materials on the silicon wafer, which is easy to damage the silicon wafer.

[0005] To this end, the utility model provides a silicon wafer cleaning device, comprising:

[0006] A cleaning tank, wherein a cleaning cavity is provided in the cleaning tank, and the material to be cleaned is suitable for being placed in the cleaning cavity;

[0007] A cleaning component, the cleaning component is arranged in the cleaning chamber, the cleaning component includes an ultrasonic cleaning element, and the ultrasonic cleaning element can make the cleaning liquid in the cleaning chamber vibrate to peel off the hot melt material on the material;

[0008] A circulation pipeline, the circulation pipeline comprising a first circulation pipeline and a second circulation pipeline, the first circulation pipeline being in communication with the cleaning chamber, the first circulation pipeline being used to introduce cleaning liquid into the cleaning chamber, and being used to discharge a mixture of hot melt material and cleaning liquid in the cleaning chamber;

[0009] The second circulation pipeline is connected to the first circulation pipeline, and the second circulation pipeline can pass a cleaning solution into the cleaning chamber through the first circulation pipeline. The cleaning solution can dissolve the hot-melt material on the material to be cleaned.

[0010] Optionally, the above-mentioned cleaning component includes a heating element, which is arranged in the cleaning chamber and is used to control the temperature of the cleaning liquid in the cleaning chamber.

[0011] Optionally, the above-mentioned silicon wafer cleaning device also includes a flow equalizer plate; the flow equalizer plate is arranged in the cleaning chamber, and a plurality of flow equalizer holes are opened on the flow equalizer plate, and the material to be cleaned is suitable for being placed on a side of the flow equalizer plate away from the ultrasonic cleaning element.

[0012] Optionally, the first circulation pipeline comprises:

[0013] Connecting pipes;

[0014] A power part, wherein a liquid outlet of the power part is connected to the cleaning chamber through a connecting pipeline;

[0015] A cleaning liquid collecting tank, one side of which is connected to the cleaning chamber through the connecting pipeline, and the other end of which is connected to the input end of the power component through the connecting pipeline.

[0016] Optionally, the first circulation pipeline further comprises a filter barrel, and the filter barrel is arranged in series between the power component and the cleaning tank.

[0017] Optionally, a filter layer is further provided on the cleaning liquid collecting tank, and the filter layer is used to filter the mixture of the hot-melt material and the cleaning liquid.

[0018] Optionally, the middle position of the filter layer is suitable for being recessed toward the bottom end of the cleaning liquid collecting tank.

[0019] Optionally, the first circulation pipeline further includes:

[0020] a first valve body, the first valve body being arranged on the connecting pipeline between the filter barrel and the power member to control the connection or closing of the connecting pipeline between the filter barrel and the power member;

[0021] a second valve body, the second valve body being arranged on the connecting pipeline between the cleaning tank and the cleaning liquid collecting tank to control the connection or closing of the connecting pipeline between the cleaning tank and the cleaning liquid collecting tank;

[0022] A third valve body is arranged on the connecting pipeline between the cleaning liquid collecting tank and the power component to control the communication or closure of the connecting pipeline between the cleaning liquid collecting tank and the power component.

[0023] Optionally, the second circulation pipeline comprises:

[0024] A centrifugal member, wherein the centrifugal member is provided with a liquid inlet, a first liquid outlet, and a second liquid outlet, wherein the liquid inlet of the centrifugal member is connected to a connecting pipeline between the cleaning tank and the cleaning liquid collecting tank, and the centrifugal member is used to separate the cleaning solution and the hot melt material;

[0025] a first collecting tank, wherein the opening of the first collecting tank is adapted to be arranged toward the first liquid outlet, the first collecting tank is also connected to the liquid inlet of the power member, and the first collecting tank is used to collect the cleaning solution;

[0026] A second collecting trough, wherein the opening of the second collecting trough is adapted to be arranged toward the second liquid outlet, and the second collecting trough is used for collecting hot-melt material.

[0027] Optionally, the second circulation pipeline further includes:

[0028] a fourth valve body, the fourth valve body being arranged on the connecting pipeline between the cleaning tank and the centrifugal member to control the connection or closing of the connecting pipeline between the cleaning tank and the centrifugal member;

[0029] A fifth valve body is provided on the connecting pipeline between the power component and the first collecting tank to control the communication or closure of the connecting pipeline between the power component and the first collecting tank.

[0030] The technical solution provided by the utility model has the following advantages:

[0031] 1. The silicon wafer cleaning device provided by the utility model comprises a cleaning tank and a circulation pipeline, wherein the circulation pipeline comprises: a first circulation pipeline and a second circulation pipeline. A cleaning chamber is provided in the cleaning tank, and the material to be cleaned is suitable for being placed in the cleaning chamber; a cleaning component is arranged in the cleaning chamber, and the cleaning component comprises an ultrasonic cleaning component, and the ultrasonic cleaning component can make the cleaning liquid in the cleaning chamber vibrate to peel off the hot-melt material on the material; the first circulation pipeline is connected with the cleaning chamber, and the first circulation pipeline is used to pass the cleaning liquid into the cleaning chamber, and to discharge the mixed liquid of the hot-melt material and the cleaning liquid in the cleaning chamber; the second circulation pipeline is connected with the first circulation pipeline, and the second circulation pipeline can pass the cleaning solution into the cleaning chamber through the first circulation pipeline, and the cleaning solution can dissolve the hot-melt material on the material to be cleaned.

[0032] When it is necessary to remove the hot melt material from the material to be cleaned, first place the material to be cleaned in the cleaning chamber, inject a cleaning liquid into the cleaning chamber, the cleaning liquid can be water, and the ultrasonic wave, without directly contacting the silicon wafer, continuously generates waves to impact the hot melt material by driving the vibration of the cleaning liquid, so that the hot melt material is loosened from the silicon wafer, reducing the risk of scratches caused by physical contact. After the hot melt material falls off the silicon wafer, it will be mixed in the cleaning liquid to form a mixed liquid of the hot melt material and the cleaning liquid, and the mixed liquid will be discharged through the first circulation pipeline; then, a cleaning solution is introduced into the cleaning chamber through the second circulation pipeline, and the cleaning solution is a sodium hydroxide solution. After the cleaning solution flows through the first circulation pipeline, it enters the cleaning chamber, and the hot melt material on the silicon wafer is chemically cleaned with the sodium hydroxide solution to further remove the residual hot melt material. Through the first circulation pipeline and the second circulation pipeline, not only can two cleanings be performed, but also the mixed liquid in the cleaning tank can be continuously discharged. The circulation system can continuously remove the hot melt material suspended in the cleaning liquid, ensure the cleaning efficiency, and avoid the hot melt material from being re-deposited on the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 This is a schematic diagram of the overall structure of the silicon wafer cleaning device provided in the utility model;

[0035] Figure 2 For the utility model Figure 1 A local enlarged schematic diagram of point A in FIG.

[0036] Description of reference numerals:

[0037] 1-cleaning tank; 11-cleaning chamber;

[0038] 2-cleaning component; 21-ultrasonic cleaning component; 22-heating component; 23-flow plate; 231-flow hole;

[0039] 31 - connecting pipeline; 32 - power part; 33 - filter barrel; 34 - cleaning liquid collection tank; 341 - filter layer; 35 - first valve body; 36 - second valve body; 37 - third valve body;

[0040] 41 - centrifugal element; 42 - first collecting tank; 43 - second collecting tank; 44 - fourth valve body; 45 - fifth valve body. DETAILED DESCRIPTION

[0041] The technical solution of the utility model will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0042] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0043] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0045] Example

[0046] This embodiment provides a silicon wafer cleaning device, such as Figure 1 and Figure 2As shown, it includes a cleaning tank 1 and a circulation pipeline, and the circulation pipeline includes: a first circulation pipeline and a second circulation pipeline. Among them, the cleaning tank 1 is a rectangular tank, and can also be a tank body of other shapes. A cleaning chamber 11 is opened in the cleaning tank 1, and a cleaning component is arranged in the cleaning chamber 11. The cleaning component includes: a heating element 22 and an ultrasonic cleaning element 21; the first circulation pipeline is connected with the cleaning chamber 11, and the first circulation pipeline can extend into the cleaning chamber 11 from the top of the cleaning chamber 11, or can pass through the side wall of the cleaning tank 1 into the cleaning chamber 11; the other end of the first circulation pipeline passes through the cleaning chamber 11 from the bottom of the cleaning tank 1 or from the lower end of the side wall of the cleaning tank 1; and the second circulation pipeline is connected with the first circulation pipeline, and the second circulation pipeline can pass the cleaning solution into the cleaning chamber 11 through the first circulation pipeline. Specifically, the material to be cleaned is a silicon wafer. The hot melt material may specifically be one or more of acrylate, rosin ester resin, C11-C22 alkyl acid, polypropylene wax, microcrystalline wax, polyethylene wax, and ethylene-vinyl acetate copolymer wax.

[0047] The viscosity of the hot melt material at a temperature greater than 50 degrees Celsius is 0.1mPa·S20mPa·S, and the viscosity of the hot melt material at a temperature less than 25 degrees Celsius is greater than or equal to 10000mPa·S, which is solid. Therefore, when it is necessary to remove the hot melt material from the material to be cleaned, first place the material to be cleaned in the cleaning chamber 11, inject a cleaning liquid into the cleaning chamber 11, and start the heating element 22. The heating element 22 controls the liquid temperature in the tank to 30-100 degrees Celsius. At this temperature, the hot melt material can be softened without causing thermal damage to the silicon wafer; then start the ultrasonic cleaning element 21, and the ultrasonic wave, without directly contacting the silicon wafer, continuously generates waves to impact the hot melt material by driving the vibration of the cleaning liquid, so that the hot melt material is loosened from the silicon wafer, reducing the risk of scratches caused by physical contact. After the hot-melt material falls off the silicon wafer, it will be mixed in the cleaning liquid to form a mixture of the hot-melt material and the cleaning liquid, and the mixture will be discharged through the first circulation pipeline; then the cleaning solution is introduced into the cleaning chamber 11 through the second circulation pipeline, and the cleaning solution is a sodium hydroxide solution. After flowing through the first circulation pipeline, the cleaning solution enters the cleaning chamber 11, and the hot-melt material on the silicon wafer is chemically cleaned with the sodium hydroxide solution to further remove the residual hot-melt material. Through the first circulation pipeline and the second circulation pipeline, not only can two cleanings be performed, but the mixed liquid in the cleaning tank 1 can be continuously discharged, and the circulation system can continuously remove the hot-melt material suspended in the cleaning liquid, thereby ensuring the cleaning efficiency and avoiding the hot-melt material from being re-deposited on the silicon wafer.

[0048] In other practicable manners, cleaning liquid or cleaning solution may also be poured into the cleaning chamber 11 manually.

[0049] Specifically, Figure 1 and Figure 2 As shown, the first circulation pipeline includes: a connecting pipeline 31, a power piece 32, a filter barrel 33 and a cleaning liquid collecting tank 34; the second circulation pipeline includes: a centrifugal piece 41, a first collecting tank 42 and a second collecting tank 43; the connecting pipeline 31 is a connecting pipe between various components, and the specific structure is as follows: the power piece 32 is a power pump, and the liquid outlet of the power piece 32 is connected to the liquid inlet of the filter barrel 33 through the connecting pipeline 31, and a first valve body 35 is arranged on the connecting pipeline 31 between the liquid outlet of the power piece 32 and the filter element, the liquid outlet of the filter barrel 33 is connected to one side of the cleaning chamber 11 through the connecting pipeline 31, and the other side of the cleaning chamber 11, that is, the liquid outlet of the cleaning chamber 11 is also connected to the connecting pipeline 31, but this section of the connecting pipeline 31 is bifurcated into two branches, one of which is arranged at the upper end of the cleaning liquid collecting tank 34 through the connecting pipeline 31, and the connecting pipeline 31 on the other branch is connected to the separation element, A second valve body 36 is installed on the connecting pipeline 31 on the branch between the collecting tank 34 and the cleaning tank 1; a fourth valve body 44 is arranged on the connecting pipeline 31 between the separating element and the cleaning tank 1; the bottom end of the cleaning liquid collecting tank 34 is connected to the liquid inlet of the power member 32 through the connecting pipeline 31, and a third valve body 37 is arranged on the connecting pipeline 31 between the cleaning liquid collecting tank 34 and the power member 32; and on the other side, two liquid outlets are arranged on the separating element, and the two liquid outlets are respectively provided with the first collecting tank 42 and the second collecting tank 43, and the bottom end of the first collecting tank 42 is also connected to the liquid inlet of the power member 32 through the connecting pipeline 31, and the connecting pipeline 31 between the first collecting tank 42 and the power member 32 and the connecting pipeline 31 between the cleaning liquid collecting tank 34 and the power member 32 are converged from two to one and connected to the power member 32; a fifth valve body 45 is also arranged on the connecting pipeline 31 between the first collecting tank 42 and the power member 32;

[0050] After the cleaning assembly completes the first cleaning of the silicon wafer, the first valve body 35, the second valve body 36 and the third valve body 37 are opened, and the fourth valve body 44 and the fifth valve body 45 are closed; the connecting pipeline 31 between the filter barrel 33 and the power member 32 is opened and connected, the connecting pipeline 31 between the cleaning tank 1 and the cleaning liquid collecting tank 34 is opened and connected, the connecting pipeline 31 between the cleaning liquid collecting tank 34 and the power member 32 is opened and connected, the connecting pipeline 31 between the cleaning tank 1 and the centrifugal member 41 is closed, and the connecting pipeline 31 between the power member 32 and the first collecting tank 42 is closed; the mixed liquid of the hot melt material and the cleaning liquid is discharged to the cleaning liquid collecting tank 3 4, a filter layer 341 is arranged at the upper end of the cleaning liquid collecting tank 34, and the filter layer 341 is a mesh plate. The filter layer 341 is used to filter the mixture of the hot melt material and the cleaning liquid, and retain the hot melt material above the filter layer 341. The cleaning liquid flows into the cleaning liquid collecting tank 34 to achieve separation of the hot melt material and the cleaning liquid. Next, the power part 32 can extract the cleaning liquid from the cleaning liquid collecting tank 34 and transport it from the liquid outlet to the cleaning tank 1. In the meantime, it will pass through the filter barrel 33 to filter the residue and impurities in the recovered cleaning liquid, so as to achieve repeated use of the cleaning liquid, and ensure the cleanliness of the cleaning liquid entering the cleaning tank 1, and ensure the effect of removing the hot melt material.

[0051] After the above-mentioned vibration cleaning is completed, the second valve body 36 and the third valve body 37 are closed, and the fourth valve body 44 and the fifth valve body 45 are opened; the connecting pipeline 31 between the cleaning tank 1 and the cleaning liquid collecting tank 34 is opened and closed, the connecting pipeline 31 between the cleaning liquid collecting tank 34 and the power member 32 is opened and closed, the connecting pipeline 31 between the cleaning tank 1 and the centrifugal member 41 is opened and connected, and the connecting pipeline 31 between the power member 32 and the first collecting tank 42 is opened and connected; the cleaning solution is injected into the cleaning tank 1 to perform a second chemical cleaning on the silicon wafer. After the cleaning is completed, the mixed liquid of the cleaning solution and the hot-melt material enters the separation member, and the separation member uses centrifugal force to separate the hot-melt material from the cleaning solution, and then the hot-melt material is transported to the second collecting tank 43 through one of the infusion ports, and the cleaning solution is transported to the first collecting tank 42 through another infusion port. The cleaning solution can be transported through the power member 32 and re-enter the cleaning tank 1 to achieve circulation. By combining the above-mentioned physical and chemical treatments to improve the process of removing the hot-melt material, the cleaning efficiency is improved, the material waste in the process of removing the hot-melt material is reduced, and the cleaning cost is reduced.

[0052] Specifically, Figure 1 and Figure 2As shown, the silicon wafer cleaning device also includes a flow equalizer 23; the flow equalizer 23 is arranged in the cleaning chamber 11 through a bracket, the heating element 22 and the ultrasonic cleaning element 21 are both arranged below the flow equalizer 23, and a plurality of flow equalizer holes 231 are opened on the flow equalizer 23. The material to be cleaned is suitable for being placed on the upper side of the flow equalizer 23. In the process of the ultrasonic cleaning element 21 causing the cleaning liquid to vibrate, the flow equalizer holes 231 are used to make the water flow uniform, which can ensure a comprehensive cleaning effect and avoid bumps and damages caused by uneven force on the silicon wafer.

[0053] Specifically, Figure 1 and Figure 2 As shown, the middle position of the filter layer 341 is suitable for being recessed toward the bottom end of the cleaning liquid collecting tank 34; overall, the filter layer 341 presents a V-shape, and the mixture of hot-melt material and cleaning liquid will be discharged to the middle part, thereby improving the collection effect and preventing splashing and polluting the surrounding environment.

[0054] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention of the utility model.

Claims

1. A silicon wafer cleaning device, characterized in that: include: A cleaning tank (1), wherein a cleaning chamber (11) is provided in the cleaning tank (1), and materials to be cleaned are suitable for being placed in the cleaning chamber (11); A cleaning component (2), the cleaning component (2) being arranged in the cleaning chamber (11), the cleaning component (2) comprising an ultrasonic cleaning element (21), the ultrasonic cleaning element (21) being capable of causing the cleaning liquid in the cleaning chamber (11) to vibrate so as to peel off the hot-melt material on the material; a circulation pipeline, the circulation pipeline comprising a first circulation pipeline and a second circulation pipeline, the first circulation pipeline being in communication with the cleaning chamber (11), the first circulation pipeline being used for introducing cleaning liquid into the cleaning chamber (11), and for discharging a mixture of hot melt material and cleaning liquid in the cleaning chamber (11); The second circulation pipeline is connected to the first circulation pipeline, and the second circulation pipeline can pass a cleaning solution into the cleaning chamber (11) through the first circulation pipeline, and the cleaning solution can dissolve the hot-melt material on the material to be cleaned.

2. The silicon wafer cleaning device according to claim 1, characterized in that: The cleaning component (2) comprises a heating element (22), wherein the heating element (22) is arranged in the cleaning chamber (11), and the heating element (22) is used to control the temperature of the cleaning liquid in the cleaning chamber (11).

3. The silicon wafer cleaning device according to claim 2, characterized in that: The silicon wafer cleaning device further comprises a flow equalizer plate (23); the flow equalizer plate (23) is arranged in the cleaning chamber (11), a plurality of flow equalizer holes (231) are opened on the flow equalizer plate (23), and the material to be cleaned is suitable for being placed on a side of the flow equalizer plate (23) away from the ultrasonic cleaning element (21).

4. The silicon wafer cleaning device according to claim 1, characterized in that: The first circulation pipeline comprises: Connecting pipeline (31); A power member (32), wherein a liquid outlet of the power member (32) is connected to the cleaning chamber (11) via a connecting pipe (31); A cleaning liquid collecting tank (34), one side of the cleaning liquid collecting tank (34) being connected to the cleaning chamber (11) via the connecting pipeline (31), and the other end of the cleaning liquid collecting tank (34) being connected to the input end of the power member (32) via the connecting pipeline (31).

5. The silicon wafer cleaning device according to claim 4, characterized in that: The first circulation pipeline further comprises a filter barrel (33), and the filter barrel (33) is arranged in series between the power component (32) and the cleaning tank (1).

6. The silicon wafer cleaning device according to claim 4, characterized in that: The cleaning liquid collecting tank (34) is also provided with a filter layer (341), and the filter layer (341) is used to filter the mixture of the hot melt material and the cleaning liquid.

7. The silicon wafer cleaning device according to claim 6, characterized in that: The middle position of the filter layer (341) is suitable for being recessed toward the bottom end of the cleaning liquid collecting tank (34).

8. The silicon wafer cleaning device according to claim 5, characterized in that: The first circulation pipeline also includes: a first valve body (35), the first valve body (35) being arranged on the connecting pipeline (31) between the filter barrel (33) and the power member (32) to control the communication or closing of the connecting pipeline (31) between the filter barrel (33) and the power member (32); a second valve body (36), the second valve body (36) being arranged on the connecting pipeline (31) between the cleaning tank (1) and the cleaning liquid collecting tank (34) to control the communication or closure of the connecting pipeline (31) between the cleaning tank (1) and the cleaning liquid collecting tank (34); A third valve body (37), the third valve body (37) being arranged on the connecting pipeline (31) between the cleaning liquid collecting tank (34) and the power member (32) to control the connection or closure of the connecting pipeline (31) between the cleaning liquid collecting tank (34) and the power member (32).

9. The silicon wafer cleaning device according to claim 5, characterized in that: The second circulation pipeline comprises: a centrifugal member (41), the centrifugal member (41) being provided with a liquid inlet, a first liquid outlet and a second liquid outlet, the liquid inlet of the centrifugal member (41) being connected to a connecting pipeline (31) between the cleaning tank (1) and the cleaning liquid collecting tank (34), the centrifugal member (41) being used for separating the cleaning solution and the hot melt material; a first collecting groove (42), wherein the opening of the first collecting groove (42) is adapted to be arranged toward the first liquid outlet, the first collecting groove (42) is also connected to the liquid inlet of the power member (32), and the first collecting groove (42) is used to collect the cleaning solution; A second collecting groove (43), the opening of the second collecting groove (43) is suitable for being arranged toward the second liquid outlet, and the second collecting groove (43) is used for collecting hot-melt material.

10. The silicon wafer cleaning device according to claim 9, characterized in that: The second circulation pipeline also includes: a fourth valve body (44), the fourth valve body (44) being arranged on the connecting pipeline (31) between the cleaning tank (1) and the centrifugal member (41) to control the communication or closure of the connecting pipeline (31) between the cleaning tank (1) and the centrifugal member (41); A fifth valve body (45), the fifth valve body (45) being arranged on the connecting pipeline (31) between the power component (32) and the first collecting tank (42) to control the communication or closure of the connecting pipeline (31) between the power component (32) and the first collecting tank (42).

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