Semiconductor device

Abstract

An apparatus is provided comprising: a photonic integrated circuit; a laser die including a pad; and a first optical fiber comprising: a first end of the first optical fiber welded to the surface of the photonic integrated circuit, where there is a first melt bond between the first end of the first optical fiber and the surface of the photonic integrated circuit; the second end of the first optical fiber is welded to the welding pad, and a second fusion joint exists between the second end of the first optical fiber and the welding pad.

Description

Technical Field

[0001] The present invention relates to semiconductor technology, and more particularly to semiconductor devices. Background Art

[0002] Electrical signal processing is a technology used for signal transmission and processing. In recent years, optical signal processing has been used in more and more applications, especially due to the use of optical fiber related applications for signal transmission.

[0003] Optical signals and processing are often combined with electrical signals and processing to provide sophisticated applications. For example, optical fibers can be used for long-distance signal transmission, and electrical signals can be used for short-distance signal transmission and processing and control. Thus, a device is formed that integrates long-distance optical components and short-distance electronic components for conversion between optical and electrical signals and processing of optical and electrical signals. Thus, a package can include optical (photonic) dies and electronic dies, where the optical dies include optical devices and the electronic dies include electronic devices. Utility Model Content

[0004] In some embodiments, a semiconductor device is provided, the semiconductor device comprising a photonic integrated circuit; a laser die comprising a bonding pad; and a first optical fiber, comprising: a first end of the first optical fiber fused to a surface of the photonic integrated circuit, wherein a first fused bond exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and a second end of the first optical fiber fused to the bonding pad, wherein a second fused bond exists between the second end of the first optical fiber and the bonding pad.

[0005] In some embodiments, the semiconductor device further comprises: a second optical fiber supported by a v-shaped groove, wherein the second optical fiber is welded to a surface of the photonic integrated circuit, and the second optical fiber is aligned with an edge coupler of the photonic integrated circuit.

[0006] In some embodiments, the second optical fiber has a tapered tip that is aligned with the edge coupler of the photonic integrated circuit.

[0007] In some embodiments, the semiconductor device further comprises: an electronic integrated circuit coupled to the photonic integrated circuit.

[0008] In some embodiments, the semiconductor device further includes: a wire, the wire being bonded to the photonic integrated circuit and a conductive element in a circuit board.

[0009] In some embodiments, the first optical fiber comprises: a core material; and a cladding material surrounding the core material, wherein there is a first fusion bond between the cladding material at the first end of the first optical fiber and the surface of the photonic integrated circuit, and wherein there is a second fusion bond between the cladding material at the second end of the first optical fiber and the pad, and the core material is not bonded to the surface of the photonic integrated circuit or the pad.

[0010] In some embodiments, the semiconductor device further comprises: a circuit board, wherein the photonic integrated circuit and the laser die are bonded to the circuit board.

[0011] In some embodiments, the semiconductor device further comprises: a plurality of external connectors for coupling the photonic integrated circuit to the circuit board.

[0012] In some embodiments, the semiconductor device further includes: a bottom filling material disposed between the plurality of external connectors.

[0013] In some embodiments, the semiconductor device further includes: a package covering the photonic integrated circuit, the laser die and the first optical fiber. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The embodiments of the present invention can be better understood according to the following detailed description and the accompanying drawings. It should be noted that, according to standard practice in the industry, the various features shown in the drawings are not necessarily drawn to scale. In fact, the sizes of various features may be arbitrarily enlarged or reduced to make the description clear.

[0015] Figure 1 According to some embodiments, a photonic integrated circuit (PIC) package is formed.

[0016] Figure 2 A photonic integrated circuit package is shown attached to a substrate in accordance with some embodiments.

[0017] Figure 3 Various semiconductor and optical components are shown attached to a substrate and optical welding pads are formed according to some embodiments.

[0018] Figure 4 A soldering process for attaching a first optical cable to a photonic integrated circuit package and adjacent optical components is shown in accordance with some embodiments.

[0019] Figure 5 A tapered optical cable is shown attached to a photonic integrated circuit package and disposed over a carrier structure in accordance with some embodiments.

[0020] Figure 6 Attaching wires to a photonic integrated circuit package and a substrate is shown according to some embodiments.

[0021] Figure 7 Various semiconductor and optical components on a substrate are shown encapsulated in a molding compound according to some embodiments.

[0022] The reference numerals are described as follows:

[0023] 100: First device layer

[0024] 105: First optical component

[0025] 109: Second insulation layer

[0026] 111: First metallization layer

[0027] 113: First bonding layer

[0028] 115: First dielectric material

[0029] 117: First bonding pad

[0030] 125: Second optical component

[0031] 126: Edge Coupler

[0032] 128: Grating Coupler

[0033] 150: First semiconductor device

[0034] 151: Semiconductor substrate

[0035] 153: Interconnection Structure

[0036] 155: Second bonding layer

[0037] 157: Second bonding pad

[0038] 159: Active Device

[0039] 180: Second device layer

[0040] 181: First external connector

[0041] 190: First optical device package

[0042] 200: Second base

[0043] 201: Dielectric layer

[0044] 203: Conductive parts

[0045] 205: First bottom filling material

[0046] 300: Second semiconductor device

[0047] 301: Second external connector

[0048] 303: Second bottom filling material

[0049] 320: Third semiconductor device

[0050] 340: Laser grains

[0051] 341: First pad

[0052] 360: Groove structure

[0053] 361: Top surface

[0054] 400: First Fiber

[0055] 403: Core Materials

[0056] 405: Cladding

[0057] 420: The first welding process

[0058] 440: Second welding process

[0059] 500: Second optical fiber

[0060] 503: Second core material

[0061] 505: Second coating layer

[0062] 507: Tapered section

[0063] 520: The third welding process

[0064] 600: Wire

[0065] 700: Encapsulation

[0066] D1: First diameter

[0067] D2: Second diameter

[0068] D3: third diameter

[0069] H1: First height

[0070] L2: Second length

[0071] W1: First width

[0072] TH1: First thickness DETAILED DESCRIPTION

[0073] It is to be understood that the following disclosure provides many different embodiments or examples to implement different parts of the subject provided. The following describes specific examples of each component and its arrangement in order to simplify the description of the disclosure. Of course, these are only examples and are not intended to limit the embodiments of the utility model. For example, the size of the component is not limited to the scope or value of an embodiment of the present disclosure, but may depend on the processing conditions and / or required properties of the component. In addition, in the subsequent description, the first component formed above or on the second component includes an embodiment in which the first and second components are formed in direct contact, and may also include an additional component that can be formed between the first and second components so that the first and second components may not be in direct contact. In addition, different examples in the disclosure may use repeated reference symbols and / or words. These repeated symbols or words are for the purpose of simplicity and clarity, and are not intended to limit the relationship between the various embodiments and / or the appearance structure.

[0074] Furthermore, spatially relative terms, such as "under," "below," "lower," "above," "upper," and the like, may be used to conveniently describe the relationship of one element or component to another element or component in the drawings. Spatially relative terms also encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may also be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and the description of the spatially relative terms used would be interpreted accordingly.

[0075] Embodiments will now be discussed with respect to certain embodiments in which various optical fibers (e.g., optical cables) can be attached to various optical components using a laser welding process. The laser welding process can be used to fuse various optical fibers to various optical components without the use of glue or other adhesives. However, the embodiments presented herein are illustrative and are not intended to limit the embodiments to the precise description discussed. On the contrary, the embodiments discussed can be incorporated into a wide variety of embodiments, and all such embodiments are fully intended to be included within the scope of the embodiments.

[0076] According to some embodiments, please refer to Figure 1 , showing the first device layer 100 of the first optical device package 190. Figure 1In the particular embodiment shown, the first device layer 100 is an optical device, such as a photonic integrated circuit (PIC). According to some embodiments, the first device layer 100 is formed over a first substrate (not shown separately) and a first insulating layer (not shown separately). A material layer (not shown separately) may be formed over the first insulating layer and may be used as a base material for the first optical component 105 formed in the first device layer 100. In one embodiment, when starting the manufacturing process of the first device layer 100, the first substrate, the first insulating layer, and the material layer of the first optical component 105 may be collectively part of a silicon-on-insulator (SOI) substrate. First looking at the first substrate, the first substrate may be a semiconductor material (such as silicon or germanium), a dielectric material (such as glass), or any other suitable material that allows for structural support for the device above.

[0077] The first insulating layer may be a dielectric layer separating the first substrate from the first device layer 100 above, and may additionally be part of a cladding material surrounding the first optical element 105 in some embodiments. In one embodiment, the first insulating layer may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations thereof, or the like, formed using methods such as implantation (e.g., to form a buried oxide (BOX) layer) or may be deposited on the first substrate using a deposition method such as chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), combinations thereof, or the like. However, any suitable material and manufacturing method may be used.

[0078] The material used to form the first optical component 105 in the first device layer 100 is initially (before patterning) a compliant material layer that will be used to begin fabricating the first optical component 105 in the first device layer 100. In one embodiment, the material used for the first optical component 105 may be a translucent material that can be used as a core material of the desired first optical component 105, such as a semiconductor material, such as silicon, germanium, silicon germanium, a combination of the foregoing, or the like. In other embodiments, the material used for the first optical component 105 may be a dielectric material, such as silicon nitride, silicon oxide, or the like. In embodiments where the material of the first optical component 105 is deposited, the material of the first optical component 105 may be deposited using methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination of the foregoing, or the like. In other embodiments where an implantation method is used to form the first insulating layer, the material of the first optical component 105 may initially be part of the first substrate prior to the implantation process used to form the first insulating layer. However, any suitable material and manufacturing method may be used to form the material of the first optical component 105.

[0079] Figure 1 It is further shown that after the material of the first optical component 105 is prepared, the material of the first optical component 105 is used to manufacture the first optical component 105 in the first device layer 100. In some embodiments, the first optical component 105 in the first device layer 100 may include components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, optical-to-electrical converters (e.g., PN junctions), electro-optical converters, lasers, combinations of the foregoing, or the like. However, any suitable first optical component 105 may be used.

[0080] According to some embodiments, to form the first optical component 105 starting from the initial material, the material for the first optical component 105 may be patterned into the desired shape of the first optical component 105 in the first device layer 100. In one embodiment, the material of the first optical component 105 may be patterned using, for example, one or more photolithography masking and etching processes. However, the material of the first optical component 105 may be patterned using any suitable method. For some first optical components 105 (e.g., waveguides or edge couplers), the patterning process may be all or at least a majority of the manufacturing process used to form these first optical components 105.

[0081] Figure 1It is further shown that for those components that use further manufacturing processes (such as Mach-Zehnder silicon photonic switches using resistive heating elements), additional processing can be performed before or after the material patterning of the first optical component 105. For example, implantation processes, additional deposition and patterning processes of different materials (such as resistive heating elements, III-V materials for converters), combinations of all of these processes, or the like can be used to help further manufacture various desired first optical components 105. In a specific embodiment, deposition of semiconductor materials (such as germanium) can be performed on the patterned portions of the material of the first optical component 105. In this embodiment, the semiconductor material can be epitaxially grown to help manufacture, for example, photodiodes for photoelectric converters. All of these manufacturing processes and all suitable first optical components 105 can be manufactured, and all of these combinations are fully intended to be included within the scope of the embodiments of the present invention.

[0082] After the first optical elements 105 of the respective first device layer 100 have been formed, the second insulating layer 109 may be deposited to cover the first optical elements 105 in the first device layer 100, and may provide additional encapsulation material. In one embodiment, the second insulating layer 109 may be a dielectric layer that separates the respective first optical elements 105 of the first device layer 100 from each other and from the upper structure, and may be used as an encapsulation material surrounding the first optical elements 105. In one embodiment, the second insulating layer 109 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination of the foregoing, or the like. The second insulating layer 109 may be formed by using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination of the foregoing, or the like. After the material of the second insulating layer 109 has been deposited, the material may be planarized using, for example, a chemical mechanical polishing process to planarize the top surface of the second insulating layer 109 (in some embodiments, the second insulating layer 109 is used to completely cover the first optical element 105) or to make the second insulating layer 109 flush with the top surface of the first optical element 105. However, any suitable material and manufacturing method may be used.

[0083] Figure 1 It is further shown that after the first optical components 105 of the first device layer 100 have been fabricated and the second insulating layer 109 has been formed, a first metallization layer 111 is formed over the first device layer 100 to electrically connect the first device layer 100 to control circuits between each other and subsequently attached devices. In one embodiment, the first metallization layer 111 is formed of alternating layers of dielectric material and conductive material and can be formed by any suitable process (e.g., deposition, inlay, dual inlay, etc.). In a specific embodiment, multiple metallization layers are used to interconnect various first optical components 105, but the exact number of first metallization layers 111 depends on the design of the first optical device package 190.

[0084] In addition, during the manufacture of the first metallization layer 111, one or more second optical components 125 may be formed as part of the first metallization layer 111. In some embodiments, the second optical components 125 of the first metallization layer 111 may include components such as couplers (e.g., edge couplers 126, grating couplers 128, etc.) for connecting to external signals, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, optical-to-electrical converters (e.g., PN junctions), electro-optical converters, lasers, combinations of the foregoing, or the like. However, any suitable optical components may be used for the one or more second optical components 125.

[0085] In one embodiment, the one or more second optical components 125 may be formed by first depositing the material of the one or more second optical components 125. In one embodiment, the material for the one or more second optical components 125 may be a dielectric material, such as silicon nitride, silicon oxide, a combination of the foregoing, or the like, or a semiconductor material (such as silicon), deposited using a deposition method (such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination of the foregoing, or the like). However, any suitable material and any suitable deposition method may be used.

[0086] After the material of the one or more second optical components 125 has been deposited or otherwise formed, the material may be patterned into the desired shape of the one or more second optical components 125. In one embodiment, the material of the one or more second optical components 125 may be patterned using, for example, one or more photolithography masking and etching processes. However, the material of the one or more second optical components 125 may be patterned using any suitable method.

[0087] For some of the one or more second optical components 125 (e.g., waveguides or edge couplers), the patterning process may be the manufacturing process used to form all or at least a majority of these components. In addition, for those components that use further manufacturing processes (e.g., Mach-Zehnder silicon photonic switches that use resistive heating elements), additional processing may be performed before or after the material patterning of the one or more second optical components 125. For example, an implantation process, additional deposition and patterning processes of different materials, combinations of all of these processes, or the like may be used to help further manufacture various desired one or more second optical components 125. All of these manufacturing processes and all suitable second optical components 125 can be manufactured, and all of these combinations are fully intended to be included within the scope of the embodiments of the present invention.

[0088] After the one or more second optical components 125 of the first metallization layer 111 have been fabricated, a first bonding layer 113 is formed over the first metallization layer 111. In one embodiment, the first bonding layer 113 can be used for dielectric-to-dielectric and metal-to-metal bonding. According to some embodiments, the first bonding layer 113 is formed of a first dielectric material 115, such as silicon oxide, silicon nitride, or the like. The first dielectric material 115 can be deposited by any suitable method, such as chemical vapor deposition, high-density plasma chemical vapor deposition (HDPCVD), physical vapor deposition, atomic layer deposition, or the like. However, any suitable material and deposition process can be used.

[0089] After the first dielectric material 115 has been formed, a first opening is formed in the first dielectric material 115 to expose the conductive portion of the underlying layer in preparation for forming the first bonding pad 117 in the first bonding layer 113. After the first opening has been formed in the first dielectric material 115, the first bonding pad 117 in the first dielectric material 115 may be formed with a seed layer and a metal plate. The seed layer may be blanket deposited on the top surface of the first dielectric material 115 and the exposed conductive portion of the underlying layer and the sidewalls of the opening and the second opening. The seed layer may include a copper layer. Depending on the desired material, the seed layer may be deposited by a process using, for example, sputtering, evaporation, or plasma-enhanced chemical vapor deposition (PECVD) or the like. The metal plate may be deposited on the seed layer by a plating process (e.g., electroplating or electroless plating). The metal plate may include copper, a copper alloy, or the like. The metal plate may be a filler material. Prior to forming the seed layer, a barrier layer (not shown separately) may be blanket deposited over the top surface of the first dielectric material 115 and the sidewalls of the opening and the second opening. The barrier layer may include titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0090] After filling the first opening, a planarization process (e.g., chemical-mechanical polish (CMP)) is performed to remove the excess portion of the seed layer and the metal plate to form a first bonding pad 117 in the first bonding layer 113. In some embodiments, a bonding pad via (not shown separately) may also be used to connect the first bonding pad 117 to the underlying conductive portion and to connect the first bonding pad 117 to the first metallization layer 111 through the underlying conductive portion.

[0091] In addition, the first bonding layer 113 may also include one or more third optical components (not shown separately) incorporated into the first bonding layer 113 to bridge incident light (e.g., from the laser die 340, further described below). In this embodiment, prior to depositing the first dielectric material 115, the one or more third optical components may be fabricated using similar methods and similar materials as the one or more second optical components 125 (as described above), such as by waveguides and other structures formed at least in part by deposition and patterning processes. However, any suitable structures, materials, and any suitable fabrication methods may be used.

[0092] Figure 1 The first semiconductor device 150 is further shown bonded to the first bonding layer 113. In some embodiments, the first semiconductor device 150 is an electronic integrated circuit (EIC) (e.g., a device without an optical device) and may have a semiconductor substrate 151, a layer of active devices 159, an interconnect structure 153 thereon, a second bonding layer 155, and associated second bonding pads 157. In one embodiment, the layers of active devices 159 may be transistors, capacitors, resistors, and the like formed above the semiconductor substrate 151, the interconnect structure 153 may be similar to the first metallization layer 111, the second bonding layer 155 may be similar to the first bonding layer 113, and the second bonding pads 157 may be similar to the first bonding pads 117. However, any suitable device may be used.

[0093] In one embodiment, the first semiconductor device 150 may be configured to operate with the first device layer 100 to achieve the desired function. In some embodiments, the first semiconductor device 150 may be an application specific integrated circuit (ASIC) device, a high bandwidth memory (HBM) module, a Xilinx processing unit (XPU), a logic die, a three-dimensional integrated circuit die (3DIC), a central processing unit (CPU), a graphics processing unit (GPU), a system-on-chip (SoC) die, a micro-electromechanical system (MEMS) die, a combination of the foregoing, or the like. Any suitable device having any suitable function may be used, and these devices are fully intended to be included within the scope of the embodiments of the present invention.

[0094] After the first semiconductor device 150 has been prepared, the first semiconductor device 150 can be bonded to the first bonding layer 113. In one embodiment, the first semiconductor device 150 can be bonded to the first bonding layer 113 using, for example, system on integrated circuit (SoIC) bonding (e.g., dielectric to dielectric and metal to metal bonding processes). In this embodiment, the first semiconductor device 150 is bonded to the first bonding layer 113 of the first device layer 100 by bonding the first bonding pad 117 to the second bonding pad 157 and bonding the dielectric in the first bonding layer 113 (e.g., first dielectric material 115) to the dielectric in the second bonding layer 155. In this embodiment, the surface of the first semiconductor device 150 and the first bonding layer 113 can be activated using, for example, dry processing, wet processing, plasma processing, exposure to an inert gas, exposure to H2, exposure to N2, exposure to O2, or a combination of the foregoing. In embodiments using wet processing, for example, RCA cleaning can be used. However, any suitable activation process can be used.

[0095] After the activation process, the first semiconductor device 150 and the first bonding layer 113 may be cleaned using, for example, chemical cleaning, and then the first semiconductor device 150 may be aligned and placed in physical contact with the first bonding layer 113. Then, the first semiconductor device 150 and the first bonding layer 113 may be subjected to heat treatment and contact pressure to bond the first semiconductor device 150 and the first bonding layer 113. For example, a pressure of about 150 kPa or less and a temperature between about 25° C. and about 250° C. may be applied to the first semiconductor device 150 and the first bonding layer 113 to fuse the first semiconductor device 150 and the first bonding layer 113. Then, a temperature at or above the eutectic point of the materials of the first bonding pad 117 and the second bonding pad 157 or higher, for example, between about 150° C. and about 650° C. may be applied to the first semiconductor device 150 and the first bonding layer 113 to fuse the first bonding pad 117 and the second bonding pad 157. In this manner, the bonding of the first semiconductor device 150 and the first device layer 100 forms a bonded device. In some embodiments, the bonded first semiconductor device 150 is baked, annealed, pressed, or otherwise processed to strengthen or complete the bond.

[0096] Furthermore, while the above discussion describes dielectric-to-dielectric and metal-to-metal bonding processes, this is intended to be illustrative and not limiting. In other embodiments, the first device layer 100 and the first metallization layer 111 (with or without the first bonding layer 113) may be bonded to the first semiconductor device 150 by direct surface bonding, metal-to-metal bonding, or other bonding processes. In other embodiments, the first semiconductor device 150 and the first metallization layer 111 (with or without the first bonding layer 113) above the first device layer 100 are bonded by metal-to-metal bonding, which is achieved by fusing conductive elements. In one embodiment, the conductive element may be a copper pillar (not shown separately) disposed between the first semiconductor device 150 and the first metallization layer 111. However, any suitable bonding process may be used, and all such methods are fully intended to be included within the scope of the present invention.

[0097] In one embodiment, after attaching the first semiconductor device 150 to the first metallization layer 111, the first substrate and the optional first insulating layer may be removed to expose the surface of the first device layer 100. In one embodiment, the first substrate and the first insulating layer may be removed using a planarization process (chemical mechanical polishing process, grinding process, one or more etching processes, combinations thereof, or the like). However, any suitable method may be used to remove the first substrate and / or the first insulating layer.

[0098] After the first substrate and the first insulating layer have been removed, a second device layer 180 of a fourth optical component (not shown separately) can be formed on the back side of the first device layer 100. In one embodiment, the second device layer 180 of the fourth optical component can be formed by using similar materials and similar processes as the second optical component 125 of the first metallization layer 111. For example, the second device layer 180 of the fourth optical component can be formed of alternating layers of cladding material (e.g., silicon oxide) and core material (e.g., silicon nitride) formed using deposition and patterning processes to form optical components such as waveguides and the like.

[0099] In one embodiment, a first through-device via (not shown separately) extends through the second device layer 180 and the first device layer 100 to provide a quick access to power, data, and ground into the first device layer 100. In one embodiment, the first through-device via can be formed by first forming a through-device via opening through the second device layer 180 and the first device layer 100. The through-device via opening can be formed by applying and developing a suitable photoresist (not shown) and removing exposed portions of the second device layer 180 and the first device layer 100.

[0100] After the through-device via openings have been formed in the first device layer 100 and the second device layer 180, the through-device via openings may be lined with a liner. The liner may be, for example, an oxide or silicon nitride formed from tetraethylorthosilicate (TEOS), although any suitable dielectric material may be used instead. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, although other suitable processes such as physical vapor deposition or thermal processes may be used instead.

[0101] After the liner has been formed along the sidewalls and bottom of the through-device via opening, a barrier layer (not shown separately) may be formed, and the remainder of the through-device via opening may be filled with a first conductive material. The first conductive material may include copper, although any suitable material may be used, such as aluminum, alloys, doped polysilicon, combinations of the foregoing, and the like. The first conductive material may be formed by electroplating copper to fill and overfill the through-device via opening on a seed layer (not shown). After the through-device via opening has been filled, excess liner, barrier layer, seed layer, and first conductive material outside of the through-device via opening may be removed by a planarization process, such as chemical mechanical polishing (CMP), although any suitable removal process may be used.

[0102] Optionally, in some embodiments, after the first through-device via has been formed, a second metallization layer may be formed to electrically connect the first through-device via. In one embodiment, the second metallization layer may be formed as described above with reference to the first metallization layer 111, for example, using a damascene process, a dual damascene process, or the like to form alternating layers of dielectric material and conductive material. In other embodiments, the second metallization layer may be formed by forming and shaping the conductive material using a plating process, and then covering the conductive material with a dielectric material. However, any suitable structure and manufacturing method may be used.

[0103] In one embodiment, a third bonding pad (not shown separately) may be formed to provide a conductive area for contact between the first through-device via and other external devices. In one embodiment, the third bonding pad may be formed in a similar manner and using similar materials as the first bonding pad 117, or may be formed using a deposition and patterning process. However, any suitable materials and manufacturing methods may be used.

[0104] In one embodiment, after the third bonding pad has been formed, a second interconnect structure (not shown separately), an under bump metallization layer (not shown separately), and a first external connector 181 may be formed to complete an embodiment of the first optical device package 190. In one embodiment, the second interconnect structure may be formed using methods and materials similar to those used to form the first metallization layer 111. However, any suitable methods and materials may be used.

[0105] The under bump metallization layer may include three layers of conductive material, such as a titanium layer, a copper layer, and a nickel layer. However, those skilled in the art will appreciate that there are many suitable materials and arrangements of layers, such as an arrangement of chromium / chromium copper alloy / copper / gold, an arrangement of titanium / titanium tungsten / copper, or an arrangement of copper / nickel / gold, which are suitable for forming the under bump metallization layer. Any suitable material or material layer for the under bump metallization layer may be used, and these are fully intended to be included within the scope of the embodiments of the present utility model.

[0106] In one embodiment, the under bump metallization layer is formed by forming each layer over the second interconnect structure. The formation of each layer can be performed using a plating process (e.g., electroplating), but other formation processes such as sputtering, evaporation, or plasma-assisted chemical vapor deposition processes may be used instead depending on the desired material. The under bump metallization layer may be formed to have a thickness between about 0.7 μm and about 10 μm, for example, about 5 μm.

[0107] In one embodiment, the first external connector 181 may be placed on the underbump metallization layer and may be, for example, a ball grid array (BGA) including a eutectic material, such as solder, but any suitable material may be used. In one embodiment, where the first external connector 181 is a solder bump, the first external connector 181 may be formed using a ball drop method, such as a direct ball drop process. In another embodiment, the solder bump may be formed by first forming a tin layer by any suitable method (e.g., evaporation, electroplating, printing, solder transfer), followed by reflow to shape the material into the desired bump shape. After the first external connector 181 has been formed, testing is performed to ensure that the structure is suitable for further processing.

[0108] Please refer to Figure 2 , Figure 2The first optical device package 190 is shown to be connected to the second substrate 200 by the first external connector 181. In one embodiment, the second substrate 200 may be a packaging substrate, and the packaging substrate may be a printed circuit board (PCB) or the like. The second substrate 200 may include one or more dielectric layers 201 and conductive components 203, such as conductive wires and vias. In some embodiments, the second substrate 200 may further include conductive pads formed on the upper surface and the lower surface of the second substrate 200.

[0109] The first external connector 181 can be aligned with the corresponding conductive connector on the second substrate 200. After alignment and physical contact, the first external connector 181 is reflowed by raising the temperature of the first external connector 181 to above the eutectic point, thereby converting the material of the first external connector 181 into a liquid phase. After reflowing, the temperature is lowered to convert the material back into a solid phase, thereby bonding the first optical device package 190 to the second substrate 200. However, any suitable bonding process may be used to connect the first optical device package 190 to the second substrate 200.

[0110] After the first optical device package 190 and the second substrate 200 have been bonded, a first underfill material 205 may be disposed. The first underfill material 205 may reduce stress and protect joints resulting from the reflow of the first external connector 181. After the first optical device package 190 is attached to the second substrate 200, the first underfill material 205 may be disposed by a capillary flow process.

[0111] Please refer to Figure 3 , Figure 3 The second semiconductor device 300, the third semiconductor device 320, the laser die 340 and the recess structure 360 ​​are shown bonded to the second substrate 200. In some embodiments, the second semiconductor device 300 is an electronic integrated circuit (EIC), such as a single semiconductor die (e.g., a single memory die), a stacked device including multiple interconnected semiconductor substrates, or other functional circuit packages. For example, the second semiconductor device 300 may be a memory device, such as a high bandwidth memory (HBM) module, a hybrid memory cube (HMC) module, or the like including multiple stacked memory dies. In these embodiments, the second semiconductor device 300 includes multiple semiconductor substrates interconnected by through device vias (TDVs). Each semiconductor substrate may have (or not have) active devices and upper interconnect structures, bonding layers and associated bonding pads to interconnect multiple devices in the second semiconductor device 300.

[0112] Of course, although in one embodiment the second semiconductor device 300 is a high bandwidth memory module, the embodiments are not limited to the second semiconductor device 300 being a high bandwidth memory module. Instead, the second semiconductor device 300 may be any suitable semiconductor device, such as a processor die or other types of functional die. In a particular embodiment, the second semiconductor device 300 may be a Xilinx processing unit, a logic die, a three-dimensional integrated circuit die, a central processing unit, a graphics processing unit, a system chip die, a micro-electromechanical system die, a combination of the foregoing, or the like. Any suitable device having any suitable function may be used, and such devices are fully intended to be included within the scope of the embodiments of the present utility model.

[0113] In some embodiments, the third semiconductor device 320 may be another electronic integrated circuit for operating with the first optical device package 190 and the second semiconductor device 300. In some embodiments, the third semiconductor device 320 may be any suitable type of device (e.g., a Xilinx processing unit, a logic die, a 3D integrated circuit die, a central processing unit, a graphics processing unit, a system chip die, a micro-electromechanical system die, a combination of the foregoing, or the like), and may have different functionality than the second semiconductor device 300, such as by being a Xilinx processing unit device, or may have the same functionality as the second semiconductor device 300, such as by being another high-bandwidth memory device. Any suitable device may be used.

[0114] In one embodiment, the laser die 340 may be connected to the second substrate 200. In some embodiments, the laser die 340 may be used to generate light to power other optical components (e.g., the first optical component 105, the second optical component 125, the third optical component, etc.), and may include a light generating structure, such as a laser diode (not shown separately). In a specific embodiment, the laser diode may be a Fabry-Perot diode, and may be based on Group III-V materials, Group II-VI materials, or any other suitable material group.

[0115] In addition, in one embodiment, the first pad 341 may be formed on the laser die 340. Figure 3 In one embodiment shown, the first pad 341 is formed on the top surface of the laser die 340. The first pad 341 can be used as a connection between the laser die 340 and the optical fiber (eg, the first optical fiber 400, not shown). Figure 3 In, shown in Figure 4 The first pad 341 may be formed of an optical material, such as silicon dioxide (SiO 2), amorphous silicon, the like, or a combination of the foregoing. However, any suitable optical material may be used to form the first pad 341. In one embodiment, the optical material of the first pad 341 may be formed over the top surface of the laser grain 340 by methods such as chemical vapor deposition (CVD), plasma-assisted chemical vapor deposition, sputtering, or thermal oxidation. However, any suitable deposition or formation process may be used to form the optical material of the first pad 341. In one embodiment, the first pad 341 may be formed by patterning the optical material into the desired shape of the first pad 341 by a combination of photolithography and etching. However, any suitable patterning process may be used to form the first pad 341 from an optical material.

[0116] After patterning the optical material, the first pad 341 may have a first width W1 of 10 μm to 300 μm across the surface of the laser die 340 and a first length (not shown individually) of 10 μm to 12000 μm across the surface of the laser die 340. If the first pad 341 does not have the first width W1 and the first length, the first pad 341 may not provide an appropriate surface area at the external interface location between the laser die 340 and the optical fiber. Thereafter, after patterning the optical material, the first pad 341 may have a first thickness TH1 of 10 μm to 1000 μm measured from the surface of the laser die. If the first pad 341 does not have the first thickness TH1, the pad may interfere with the transmission of light generated from the laser die 340 through the optical fiber, so that the transmission of light generated from the laser die 340 may not function properly.

[0117] In one embodiment, the groove structure 360 ​​can be connected to the second substrate 200. In some embodiments, the groove structure 360 ​​can be used as an optical fiber (eg, a second optical fiber 500, not shown). Figure 3 In, shown in Figure 5 In one embodiment, the groove structure 360 ​​may include silicon, glass (e.g., quartz, heat-resistant glass, Tempax, etc.), the like, or a combination thereof. According to some embodiments, the groove structure 360 ​​may have a top surface 361, wherein the material of the top surface 361 is recessed to form a groove in the top surface 361. The optical fiber (e.g., the second optical fiber 500, shown in FIG. 1 ) is a fiber having a plurality of optical fibers (e.g., a plurality of optical fibers 500, shown in FIG. 1 ) and a plurality of optical fibers (e.g., a plurality of optical fibers 500, shown in FIG. 1 ). Figure 5 In some embodiments, the groove of the groove structure 360 ​​may be V-shaped or U-shaped. However, it should be noted that any suitable shape may be used for the groove of the groove structure 360, and in some embodiments, the top surface 361 of the groove structure 360 ​​remains flat and can still be used to support the optical fiber.

[0118] In some embodiments, the groove structure 360 ​​can provide precise alignment of the optical fiber with a target position on the surface of the first optical device package 190. For example, the groove of the groove structure 360 ​​can prevent or reduce rolling of the optical fiber when the optical fiber is disposed in the groove. In addition, the groove of the groove structure 360 ​​can be formed by a suitable lithography and etching process, and the position and size of the groove can be precisely controlled. According to some embodiments, the groove structure 360 ​​can have a first height H1 above the second substrate 200 of 200μm to 1000μm, and the optical fiber can have a buried portion disposed in the groove, so that when the groove of the groove structure 360 ​​is at the first height H1, the optical fiber is aligned with the target position on the surface of the first optical device package 190. If the groove of the groove structure 360 ​​is not at the first height H1, the optical fiber disposed in the groove may not be aligned with the target position on the surface of the first optical device package 190.

[0119] In one embodiment, the second semiconductor device 300, the third semiconductor device 320, the laser die 340 and the recess structure 360 ​​can be bonded to the second substrate 200 by using, for example, a second external connector 301. The second external connector 301 can be a conductive bump (e.g., a ball grid array, a micro bump, etc.) or a conductive column using a material such as solder and copper. In one embodiment, where the second external connector 301 is a contact bump, the second external connector 301 may include a material such as tin or other suitable materials, such as silver, lead-free tin, or copper. In one embodiment, where the second external connector 301 is a solder bump, the second external connector 301 may be formed by first forming a tin layer by a commonly used method (e.g., evaporation, electroplating, printing, solder transfer, ball placement, etc.). When the tin layer has been formed on the structure, reflow can be performed to shape the material into the desired bump shape.

[0120] In addition, after the second external connector 301 has been set, the second semiconductor device 300, the third semiconductor device 320, the laser die 340 and the groove structure 360 ​​are aligned with the second substrate 200. After alignment and physical contact, the second external connector 301 is reflowed by increasing the temperature of the second external connector 301 to exceed the eutectic point, thereby converting the material of the second external connector 301 into a liquid phase. After reflowing, the temperature is lowered to convert the material of the second external connector 301 back to a solid phase, thereby bonding the second semiconductor device 300, the third semiconductor device 320, the laser die 340 and the groove structure 360 ​​to the second substrate 200.

[0121] After the second semiconductor device 300, the third semiconductor device 320, the laser die 340, and the recess structure 360 ​​have been bonded, the second bottom fill material 303 may be disposed. The second bottom fill material 303 may reduce stress and protect joints resulting from the reflow of the second external connector 301. After the second semiconductor device 300, the third semiconductor device 320, the laser die 340, and the recess structure 360 ​​have been attached, the second bottom fill material 303 may be disposed by a capillary flow process.

[0122] According to other embodiments, the groove structure 360 ​​can be attached to the second substrate 200 by using an adhesive (not shown separately). In this embodiment, the groove structure 360 ​​can omit the second external connector 301 and the second bottom filling material 303. The adhesive can be deposited above the top surface of the second substrate 200, and the groove structure 360 ​​can be arranged to directly physically contact the adhesive. The adhesive can be an epoxy resin material, or can be more specifically an optical adhesive, such as epoxy-acrylate and oligomers. In one embodiment, the adhesive can be subjected to a curing process, such as light curing, heat curing or the like, to harden the adhesive.

[0123] Please refer to Figure 4 , Figure 4 The first optical fiber 400 is shown attached to the laser die 340 and the first optical device package 190. In one embodiment, the first optical fiber 400 is configured to optically couple the laser die 340 and an optical input end, such as a grating coupler 128 located in the first optical device package 190. By configuring the first optical fiber 400 to be optically connected to the grating coupler 128, the optical signal exiting the first optical fiber 400 is directed to an optical component of the first optical device package 190, such as the second optical component 125.

[0124] In one embodiment, the first optical fiber 400 may include a core material 403 surrounded by a cladding layer 405. Optionally, a surrounding cover material (not shown separately) may be used to surround the cladding layer 405 to provide protection. In one embodiment, the core material 403 may include an optical material such as glass, air, the like, or a combination thereof. Furthermore, the cladding layer 405 may include one or more layers of cladding material, wherein the cladding material may include silicon dioxide (SiO 2 ), quartz glass, the like, or a combination thereof. However, any suitable material may be used for the core material 403 and the cladding layer 405.

[0125] In one embodiment, the first optical fiber 400, with or without a covering material, may have a first diameter D1 in the range of 50 μm to 250 μm, for example, about 200 μm. If the first optical fiber 400 does not have the first diameter D1, the light generated from the laser die 340 may not be adequately transmitted through the first optical fiber 400 to the optical input end (e.g., the grating coupler 128) located in the first optical device package 190. Furthermore, in one embodiment, the cladding layer 405 may be formed to a second thickness TH2 in the range of 40 μm to 190 μm. If the cladding layer 405 is not formed to the second thickness TH2, the size of the surface area between the cladding layer 405 and the interface material may not be sufficient to form a weld between the first optical fiber 400 and a corresponding optical component formed by fusion bonding by a laser welding process discussed later.

[0126] In one embodiment, positioning the first optical fiber 400 with the laser die 340 includes aligning and placing a first end of the first optical fiber 400 in physical contact with a first external interface location on a surface of the laser die 340, wherein the first external interface location may be a first pad 341. In one embodiment, the first end of the first optical fiber 400 is aligned and placed in physical contact with the first pad 341, and the first optical fiber 400 may be bonded to the first pad 341 by a first welding process 420. The first welding process 420 may bond one or more materials of the first optical fiber 400 to the first pad 341 by providing localized heat energy at the interface between the first optical fiber 400 and the first pad 341, thereby welding the first optical fiber 400 to the first pad 341. In some embodiments, the first welding process 420 may be a laser welding process, wherein a laser is used to provide localized heat energy at the interface between the first optical fiber 400 and the first external interface location.

[0127] According to some embodiments, the first welding process 420 is performed by applying appropriate local heat for an appropriate time to form an appropriate weld between the first optical fiber 400 and the first pad 341. The local heat may be applied to raise the first temperature at the interface between the first pad 341 and the first optical fiber 400 to a range of 400°C to 1000°C. If the first temperature is not reached at this interface, the formation of a covalent bond may not be induced between the first optical fiber 400 and the first pad 341, thereby producing an insufficient weld. Furthermore, in one embodiment, the first welding process 420 may be performed for a duration of 0.1 seconds to 5 seconds. If the first welding process 420 is not performed for this time, the first temperature may not be reached, and the amount of molten bonding between the first optical fiber 400 and the first pad 341 may be insufficient to form an adequate weld between the first optical fiber 400 and the first pad 341.

[0128] According to some embodiments, the localized heat energy provided by the first welding process 420 causes covalent bonds to be formed between the first welding pad 341 and the core material 403 and the cladding layer 405 of the first optical fiber 400 at the interface between the first welding pad 341. In this embodiment, the formation of covalent bonds between the first welding pad 341 and the core material 403 and the cladding layer 405 of the first optical fiber 400 causes the first welding pad 341 to be fusion-bonded to the first optical fiber 400.

[0129] In another embodiment, the first welding process 420 applies localized heat to the cladding layer 405 so that a covalent bond is formed between the cladding layer 405 and the first pad 341, but a covalent bond is avoided between the core material 403 and the first pad 341 (e.g., a molten bond is not formed between the core material 403 and the first pad 341). In this embodiment, the cladding layer 405 may be formed to the second thickness TH2. If the cladding layer 405 is not formed to the second thickness TH2, the size of the surface area between the cladding layer 405 and the first pad 341 may not be sufficient to form a weld between the first optical fiber 400 and the first optical device package 190 through the molten bond of the first welding process 420. In this embodiment, the weld between the first optical fiber 400 and the first pad 341 is formed through the molten bond between the cladding layer 405 and the first pad 341, and the core material 403 physically contacts the first external interface position on the surface of the laser die 340 without directly bonding or adhering to the first pad 341.

[0130] Figure 4 The positioning of the first optical fiber 400 and the first optical device package 190 is further shown. The positioning of the first optical fiber 400 and the first optical device package 190 includes aligning and placing the second end of the first optical fiber 400 in physical contact with the second external interface location (e.g., the first bonding layer 113) on the surface of the first optical device package 190. In one embodiment, after the second end of the first optical fiber 400 is aligned and placed in physical contact with the second external interface location on the surface of the first optical device package 190, the first optical fiber 400 can be bonded to the second external interface location by a second welding process 440. The second welding process 440 can bond one or more materials of the first optical fiber 400 to the second external interface location by providing localized heat energy at the interface between the first optical fiber 400 and the second external interface location, thereby welding the first optical fiber 400 to the second external interface location. In some embodiments, the second welding process 440 can be a laser welding process, wherein a laser is used to provide localized heat energy at the interface between the first optical fiber 400 and the second external interface location. The second welding process 440 can be performed in a manner similar to the first welding process 420 described above. However, any suitable welding process and welding parameters may be used to form the weld between the first optical fiber 400 and the first optical device package 190 .

[0131] According to some embodiments, the localized heat energy provided by the second welding process 440 causes covalent bonds to be formed between the first optical device package 190 and the core material 403 and the cladding layer 405 of the first optical fiber 400 at the interface between the first optical fiber 400 and the second external interface location. The covalent bonds formed between the second external interface location and the core material 403 and the cladding layer 405 of the first optical fiber 400 cause the second external interface location to be melt-bonded to the first optical fiber 400.

[0132] In another embodiment, no additional welding structure (e.g., first welding pad 341) is required to form a weld between the first optical fiber 400 and the first optical device package 190. In this embodiment, the second external interface location may be a structure of the first optical device package 190 itself (e.g., first dielectric material 115), because the structure used for the second external interface location may be a material suitable for forming a fusion bond between the first optical fiber 400 and the first optical device package 190, such as a structure formed of silicon dioxide. In another embodiment, an additional welding pad (not shown separately) may be formed at the second external interface location on the first optical device package 190 during the formation of the first optical device package 190. In this embodiment, the additional welding pad may be formed in a similar manner as the first welding pad 341 is formed on the surface of the laser die 340.

[0133] In another embodiment, the second welding process 440 applies local heat energy to the cladding 405, so that a covalent bond is formed between the cladding 405 and the second external interface location, but the formation of a covalent bond between the core material 403 and the second external interface location can be avoided (for example, no molten bond is formed between the core material 403 and the first dielectric material 115 of the first bonding layer 113). In this embodiment, the welding between the first optical fiber 400 and the first optical device package 190 is formed by the molten bond between the cladding 405 and the second external interface location (for example, the first dielectric material 115 of the first bonding layer 113), and the core material 403 is optically aligned with the grating coupler 128 without being directly bonded or adhered to the first optical device package 190.

[0134] Please refer to Figure 5 , Figure 5The second optical fiber 500 is shown attached to the first optical device package 190 and disposed on the groove structure 360. In one embodiment, the second optical fiber 500 is used as an optical input / output port to the first optical device package 190. In one embodiment, the second optical fiber 500 is configured to optically couple the second optical fiber 500 and an optical input / output port, such as an edge coupler 126, located at a third external interface position on a surface adjacent to the first optical device package 190. By positioning the second optical fiber 500, an optical signal exiting the second optical fiber 500 is directed toward an optical component (e.g., the second optical component 125) of the first optical device package 190. Similarly, the second optical fiber 500 is positioned so that an optical signal exiting the optical component of the first optical device package 190 is directed into the second optical fiber 500 for transmission. However, any suitable positioning may be used.

[0135] In one embodiment, the second optical fiber 500 may include a second core material 503 surrounded by a second cladding layer 505. Optionally, a surrounding cover material (not shown separately) may be used to surround the second cladding layer 505 to provide protection. In one embodiment, the second core material 503 may include an optical material, such as glass, air, the like, or a combination thereof. Furthermore, the second cladding layer 505 may include one or more layers of cladding material, wherein the cladding material may include silicon dioxide (SiO 2 ), quartz glass, the like, or a combination thereof. However, any suitable material may be used for the second core material 503 and the second cladding layer 505.

[0136] In one embodiment, the second optical fiber 500, with or without a covering material, may have a second diameter D2 in the range of 100 μm to 250 μm, for example, about 250 μm. If the second optical fiber 500 does not have the second diameter D2, the fiber weld robustness is insufficient. Furthermore, in one embodiment, the second optical fiber 500 includes a tapered portion 507 that tapers downward toward the tip to be positioned at the third external interface position. In this embodiment, the tapered portion 507 may have a second length in the range of 10 μm to 1000 μm. If the tapered portion 507 has a length other than the second length L2, the fiber weld robustness is insufficient. Furthermore, in this embodiment, the tapered portion 507 may have a third diameter D3 in the range of 10 μm to 127 μm at its tip. In this embodiment, if the tapered portion 507 does not have the third diameter D3, the fiber weld robustness is insufficient.

[0137] The second optical fiber 500 having the tapered portion 507 may be formed by an optical fiber manufacturing process involving heating, stretching, and cutting the second optical fiber 500 having the tapered portion 507. For example, the second optical fiber 500 may be heated to a third temperature along a stretch point of the second optical fiber 500. In this embodiment, the third temperature is in the range of 400° C. to 1000° C. If the third temperature does not reach the stretch point, the second optical fiber 500 may not be flexible enough to stretch the second optical fiber 500 to form the tapered portion 507. After the stretch point on the second optical fiber 500 reaches the third temperature, while at the third temperature, the second optical fiber 500 may be stretched in a direction along the central axis of the second optical fiber 500, thereby forming a taper on both sides of the stretch point on the second optical fiber 500 that tapers toward the stretch point. After heating and stretching the optical fiber, the tapered portion 507 may be formed on either side of the stretch point on the optical fiber. In this embodiment, the optical fiber may then be cut at the stretch point to form the second optical fiber 500 having the tapered portion 507, the tapered portion 507 having a tip having a third diameter D3. In one embodiment, a blade may be used to cut the optical fiber at the drawing point and saw through the optical fiber. However, any suitable process may be used to cut the optical fiber to form the second optical fiber 500 having the tapered portion 507. In addition, any suitable method and apparatus may be used to heat and draw the optical fiber when forming the second optical fiber 500 having the tapered portion 507.

[0138] After forming the second optical fiber 500, the second optical fiber 500 may be disposed in the groove structure 360. In one embodiment, the second optical fiber 500 is disposed in the groove structure 360 ​​and is buried in the groove so that the tip of the tapered portion 507 is aligned with the third external interface location on the surface of the first optical device package 190. In some embodiments, an adhesive (not shown separately) may fill the remaining portion of the groove not occupied by the second optical fiber 500 to help align the second optical fiber 500 with the third external interface location during the third welding process 520 for welding the second optical fiber 500 to the third external interface location and after the second optical fiber 500 has been welded to the third external interface location. In another embodiment, after the second optical fiber 500 is welded to the third external interface location, the adhesive may be used to fill the remaining portion of the groove to help provide long-term stability and alignment between the second optical fiber 500 and the first optical device package 190.

[0139] After the tapered portion 507 of the second optical fiber 500 is aligned with a third external interface location (e.g., an edge coupler 126 of a second optical component 125 located adjacent to an edge in the first optical device package 190), the second optical fiber 500 may be welded to the first optical device package 190 at the third external interface location by using a third welding process 520. In one embodiment, the third welding process 520 may be performed using a groove structure 360 ​​to facilitate alignment of the second optical fiber 500 with the third external interface location. In another embodiment, the third welding process 520 may be performed without the second optical fiber being disposed on the groove structure 360, and after the second optical fiber 500 is welded to the first optical device package 190 by the third laser welding process, the second optical fiber 500 may then be disposed on the groove structure 360 ​​for long-term support.

[0140] In one embodiment, the third welding process 520 can adhere one or more materials of the second optical fiber 500 to the third external interface location by providing localized heat energy at the interface between the second optical fiber 500 and the third external interface location, thereby welding the second optical fiber 500 to the third external interface location. According to some embodiments, the localized heat energy provided by the third welding process 520 causes a covalent bond to be formed between the surface of the first optical device package 190 (e.g., the dielectric material of the first metallization layer 111) and the tapered portion 507 of the second optical fiber 500 at the interface between the second optical fiber 500 and the third external interface location. The formation of the covalent bond between the third external interface location and the second optical fiber 500 causes a molten bond to be formed between the third external interface location (e.g., the dielectric material of the first metallization layer 111) and the second optical fiber 500. In some embodiments, the third welding process 520 can be a laser welding process, wherein a laser is used to provide localized heat energy at the interface between the second optical fiber 500 and the third external interface location. The third welding process 520 can be performed in a manner similar to the first welding process 420 described above. However, any suitable welding process and welding parameters may be used to form the weld between the second optical fiber 500 and the first optical device package 190 .

[0141] In another embodiment, the third welding process 520 applies localized heat to the second cladding layer 505 so that a covalent bond is formed between the second cladding layer 505 and the third external interface location, but the formation of a covalent bond between the second core material 503 and the third external interface location can be avoided (e.g., no molten bond is formed between the second core material 503 and the third external interface location). In this embodiment, the weld between the second optical fiber 500 and the first optical device package 190 is formed by molten bonding between the second cladding layer 505 and the third external interface location (e.g., the dielectric material of the first metallization layer 111), and the second core material 503 can maintain the edge coupler 126 aligned with the surface of the first optical device package 190 adjacent to the first optical device package 190 without being directly bonded or adhered to the first optical device package 190.

[0142] In one embodiment, no additional welding structure (e.g., a structure similar to the first welding pad 341) is required to form a weld between the second optical fiber 500 and the first optical device package 190. In this embodiment, the third external interface location can be a structure of the first optical device package 190 itself (e.g., a dielectric material of the first metallization layer 111), because the structure used for the third external interface location can be a material suitable for forming a fusion bond between the second optical fiber 500 and the first optical device package 190, such as a structure formed of silicon dioxide. In another embodiment, an additional welding pad (not shown separately) can be formed at the third external interface location on the first optical device package 190 during the formation of the first optical device package 190. In this embodiment, the additional welding pad can be formed in a similar manner as the first welding pad 341 is formed on the surface of the laser die 340.

[0143] Please refer to Figure 6 , Figure 6 The wire 600 is shown coupled between the second substrate 200 and the first optical device package 190. In one embodiment, the wire 600 electrically connects the first optical device package 190 to the second substrate 200 by wire bonding the first bonding pad 117 in the first bonding layer 113 of the first optical device package 190. In one embodiment, the wire 600 can be used to supply power to various components of the first optical device package 190 (e.g., the first semiconductor device 150, the first device layer 100, and the second device layer 180) from the second substrate 200. In one embodiment, the use of the wire 600 to supply power to the first optical device package 190 avoids the need to use an intermediate interposer to transmit power.

[0144] In one embodiment, the wire 600 may be formed of a material such as gold (Au) or other wire. Furthermore, an electronic flame off (EFO) rod may be used to raise the temperature of the wire 600 in a capillary controlled by a closed clamp (not shown). When the temperature of the wire 600 is raised to a fifth temperature in the range of 150° C. to 250° C., the wire 600 contacts the first bonding pad 117 to form a first connection, and then the wire 600 is moved to the second substrate 200 to form a second connection. After the connection, the remaining portion of the wire 600 is separated from the connection portion to form a wire bond. The connection process may be repeated to form any number of connections between the second substrate 200 and various other components on the second substrate 200 (e.g., the second semiconductor device 300, the third semiconductor device 320, and the laser die 340).

[0145] Please refer to Figure 7 The encapsulant 700 is disposed above the surface of the second substrate 200 to encapsulate various components on the second substrate 200 (e.g., the first optical device package 190, the second semiconductor device 300, the third semiconductor device 320, the laser die 340, the groove structure 360, the first optical fiber 400, the second optical fiber 500, the wire 600, etc.). In one embodiment, the encapsulant 700 may be a molding compound, an epoxy resin, or the like. The encapsulant 700 may be applied by compression molding, transfer molding, or the like. The encapsulant 700 is further disposed in the gap region between the second semiconductor device 300, the third semiconductor device 320, the laser die 340, the groove structure 360, and the first optical device package 190. The encapsulant 700 may be applied in a liquid or semi-liquid form and then subsequently cured.

[0146] After the encapsulant 700 has been disposed, a planarization process may be performed on the encapsulant 700. After the planarization process within a process variation range, the top surfaces of the encapsulant 700 and the first optical device package 190 are substantially coplanar. The planarization process may be, for example, chemical mechanical polishing (CMP), a grinding process, or the like. In some embodiments, planarization may be omitted.

[0147] By using a laser welding process (e.g., first welding process 420) to adhere an optical cable (e.g., first optical fiber 400) to various components (e.g., laser die 340) without using adhesives, the embodiments discussed herein can achieve many advantages. Using localized heat energy through the laser welding process, the optical material of the optical cable can be fused with similar optical materials of various optical components without disrupting the continuity of the optical material with an adhesive material that may have different optical properties. In addition, the laser welding process can provide improved alignment integrity and attachment life and durability compared to traditional adhesive methods of attaching optical fibers.

[0148] According to some embodiments of the present invention, a method for manufacturing a semiconductor device includes: setting a first optical fiber to physically contact a first optical device; and welding the first optical fiber to the first optical device. In one embodiment, the step of welding the first optical fiber to the first optical device includes performing laser welding. In one embodiment, the method further includes bonding an electronic integrated circuit (EIC) device to a first surface of the first optical device, wherein the electronic integrated circuit device is adjacent to the first optical fiber on the first surface. In one embodiment, the method further includes welding the first optical fiber to a second optical device using a second welding process. In one embodiment, the second optical device includes: a laser die; and a first welding pad deposited above the second surface of the laser die, wherein the first welding pad includes silicon oxide. In one embodiment, the method further includes welding the second optical fiber to a side of the first optical device using a second welding process. In one embodiment, a groove structure supports the second optical fiber, wherein the groove structure forms an edge coupler with a height that aligns the second optical fiber to the first optical device.

[0149] According to some embodiments of the present invention, a method includes: bonding a photonic integrated circuit to a circuit board; bonding a laser die to a circuit board adjacent to the photonic integrated circuit; laser welding a first optical cable to the photonic integrated circuit; and laser welding the first optical cable to the laser die. In one embodiment, the method further includes: bonding a v-groove structure to a circuit board adjacent to the photonic integrated circuit; laser welding a second optical cable to the photonic integrated circuit, wherein the v-groove structure supports the second optical cable; and laser welding a first wire from a first conductive element of the photonic integrated circuit to a second conductive element of the circuit board. In one embodiment, the method further includes: bonding a Xilinx processing unit device to a circuit board; and bonding a memory device to a circuit board. In one embodiment, the second optical cable is aligned with an edge coupler of the photonic integrated circuit. In one embodiment, laser welding the first optical cable to the photonic integrated circuit causes a covalent bond to be formed between the material of the first optical cable and the photonic integrated circuit. In one embodiment, the step of laser welding the first optical cable to the laser die welds the first optical cable to a pad of the laser die, wherein the pad comprises silicon oxide. In one embodiment, the first optical cable further comprises: a core material; and a cladding material surrounding the core material, wherein the laser welding welds the cladding material of the first optical cable to the photonic integrated circuit without welding the core material to the photonic integrated circuit.

[0150] According to some embodiments of the present invention, a device includes: a photonic integrated circuit; a laser die including a soldering pad; and a first optical fiber including: a first end of the first optical fiber fused to a surface of the photonic integrated circuit, wherein a first fused bond exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and a second end of the first optical fiber fused to the soldering pad, wherein a second fused bond exists between the second end of the first optical fiber and the soldering pad. In one embodiment, the method further includes a second optical fiber supported by a v-groove, wherein the second optical fiber is soldered to the surface of the photonic integrated circuit, and the second optical fiber is aligned with an edge coupler of the photonic integrated circuit. In one embodiment, the second optical fiber has a tapered tip, and the tapered tip is aligned with an edge coupler of the photonic integrated circuit. In one embodiment, the method further includes an electronic integrated circuit bonded to the photonic integrated circuit. In one embodiment, the method further includes a wire bonded to the photonic integrated circuit and a conductive element in a circuit board. In one embodiment, a first optical fiber comprises: a core material; and a cladding material surrounding the core material, wherein there is a first fusion bond between the cladding material at a first end of the first optical fiber and a surface of a photonic integrated circuit, and wherein there is a second fusion bond between the cladding material at a second end of the first optical fiber and a bonding pad, and the core material is not bonded to the surface of the photonic integrated circuit or the bonding pad.

[0151] The foregoing text summarizes the features of many embodiments, so that those with ordinary knowledge in the art can better understand the embodiments of the utility model from various aspects. Those with ordinary knowledge in the art should understand and can easily design or modify other processes and structures based on the embodiments of the utility model, and thereby achieve the same purpose and / or achieve the same advantages as the embodiments introduced herein. Those with ordinary knowledge in the art should also understand that these equivalent structures do not deviate from the spirit and scope of the embodiments of the utility model. Various changes, substitutions or modifications can be made to the embodiments of the utility model without departing from the spirit and scope of the embodiments of the utility model.

Claims

1. A semiconductor device, characterized in that: include: A photonic integrated circuit; a laser die including a bonding pad; and A first optical fiber, comprising: A first end of the first optical fiber is fused to a surface of the photonic integrated circuit, wherein a first fused joint exists between the first end of the first optical fiber and the surface of the photonic integrated circuit; and A second end of the first optical fiber is fused to the welding pad, wherein a second fusion joint exists between the second end of the first optical fiber and the welding pad.

2. The semiconductor device according to claim 1, wherein Also includes: A second optical fiber is supported by a v-shaped groove, wherein the second optical fiber is welded to a surface of the photonic integrated circuit and is aligned with an edge coupler of the photonic integrated circuit.

3. The semiconductor device according to claim 2, wherein: The second optical fiber has a tapered tip that is aligned with the edge coupler of the photonic integrated circuit.

4. The semiconductor device according to claim 1, wherein: Also includes: An electronic integrated circuit is bonded to the photonic integrated circuit.

5. The semiconductor device according to claim 4, wherein: Also includes: A wire is connected to the photonic integrated circuit and a conductive element in a circuit board.

6. The semiconductor device according to claim 1, wherein: The first optical fiber comprises: a core material; and a cladding material surrounding the core material, wherein the first fusion bond exists between the cladding material at the first end of the first optical fiber and the surface of the photonic integrated circuit, and wherein the second fusion bond exists between the cladding material at the second end of the first optical fiber and the pad, and the core material is not bonded to the surface of the photonic integrated circuit or the pad.

7. The semiconductor device according to claim 1, wherein Also includes: A circuit board, wherein the photonic integrated circuit and the laser die are bonded to the circuit board.

8. The semiconductor device according to claim 7, wherein: Also includes: A plurality of external connectors couple the photonic integrated circuit to the circuit board.

9. The semiconductor device according to claim 8, wherein: Also includes: A bottom filling material is disposed between the plurality of external connectors.

10. The semiconductor device according to any one of claims 1 to 9, wherein: Also includes: A package covers the photonic integrated circuit, the laser chip and the first optical fiber.

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