Power transformer packaging structure and transformer equipment
By using Fanout, TSV, RDL rewiring and other processes in the power transformer packaging structure, a cavity-free transformer device structure is formed, which solves the problem of incomplete filling of the internal plastic packaging material during the plastic packaging process of the transformer device, and improves the adhesion of the product. Knot strength, waterproof and moisture-proof performance.
Patent Information
- Application Number
- CN202421131330.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-22
- Publication Date
- 2025-01-21
- Estimated Expiration
- 2034-05-22
AI Technical Summary
During the plastic sealing process of existing transformer devices, the internal plastic sealing material is not completely filled, resulting in the formation of hollows, bubbles, etc., which affects the adhesion strength, waterproof and moisture-proof performance of the plastic sealing structure. In severe cases, the product is inactive or even fails.
A power transformer packaging structure is adopted that includes a main body of plastic encapsulation material, a magnetic core, a first conductor, a second conductor, a third conductor and a fourth conductor. The magnetic core penetrates the main body of plastic encapsulation material, and the first conductor and the second conductor fill the opening of the main body of plastic encapsulation material. holes, the third conductor and the fourth conductor are provided on the surface of the plastic encapsulation material, and a cavity-free transformer device structure is formed through processes such as Fanout, TSV, and RDL rewiring.
It ensures that the plastic-sealed transformer device does not form cavities, bubbles, etc., improves the bonding strength, waterproof and moisture-proof performance of the plastic-sealed structure, and avoids the risk of the product becoming non-functional.
Smart Images
Figure CN222380371U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of transformers, and in particular to a power transformer packaging structure and a transformer device. Background Art
[0002] In the plastic package SiP structure of power chips, voltage transformation and other requirements are often involved, so it is necessary to add a transformer to the packaging module. However, there are often cavities inside the traditional transformer structure, which will lead to incomplete filling of the plastic packaging material inside the transformer during the plastic packaging process, forming voids and bubbles, which will cause the plastic packaging structure to have reduced bonding strength, waterproof and moisture-proof properties, and in severe cases, the product will be completely non-functional or even fail. Utility Model Content
[0003] The purpose of the embodiments of the present application is to provide a power transformer packaging structure and transformer equipment to solve the problem that the plastic packaging material inside the existing transformer is not completely filled, forming voids, bubbles, etc., which will cause the adhesion strength, waterproofness, moisture-proofness and other performance of the plastic packaging structure to decrease. In severe cases, it will cause the product to be completely non-functional or even fail.
[0004] An embodiment of the present application provides a power transformer packaging structure, comprising:
[0005] The main body of the plastic encapsulation material is a rectangular parallelepiped structure;
[0006] A magnetic core, the magnetic core runs through the center of the first surface and the second surface of the plastic packaging material body; the first surface and the second surface are two opposite surfaces of the plastic packaging material body;
[0007] A plurality of first through holes and a plurality of second through holes are arranged in the main body of the plastic encapsulation material; the first through holes penetrate the third surface and the fourth surface of the main body of the plastic encapsulation material, the second through holes penetrate the third surface and the fourth surface of the main body of the plastic encapsulation material, the first through holes and the second through holes are respectively located on both sides of the magnetic core, and the first through holes are not in contact with the magnetic core, and the second through holes are not in contact with the magnetic core; the third surface and the fourth surface are two opposite surfaces of the main body of the plastic encapsulation material;
[0008] A first conductive wire is arranged in the first through hole, and a second conductive wire is arranged in the second through hole;
[0009] A plurality of third wires are arranged on the fifth surface of the plastic encapsulation material body, and a plurality of fourth wires are arranged on the sixth surface of the plastic encapsulation material body; each first wire and the corresponding second wire, third wire and fourth wire form a coil of the transformer; the fifth surface and the sixth surface are two opposite surfaces of the plastic encapsulation material body.
[0010] In the above technical scheme, the power transformer packaging structure includes a plastic packaging material body, a magnetic core, a first wire, a second wire, a third wire and a fourth wire. The magnetic core runs through the plastic packaging material body, the first wire fills the first through hole of the plastic packaging material body, the second wire fills the second through hole of the plastic packaging material body, and the third wire and the fourth wire are arranged on the surface of the plastic packaging material, thereby forming a transformer component structure without a cavity, so that the transformer component after plastic packaging will not form voids, bubbles, etc.
[0011] In some optional implementations, the molding compound body is formed by molding the magnetic core using a Fanout process.
[0012] Among the above technical solutions, the Fanout process, also known as Fan-Out Wafer-Level Packaging (FOWLP for short), is a semiconductor packaging technology. This technology allows more I / O wiring outside the boundaries of the chip, thereby increasing the I / O density, reducing the package size, and also improving electrical performance. Based on the advanced Fanout packaging process technology, it has the advantages of miniaturization, low cost and high integration, as well as better performance and higher energy efficiency.
[0013] In some optional implementations, the first through hole and the second through hole of the molding compound body are formed by performing TMV drilling on the molding compound body using a TSV process.
[0014] Among the above technical solutions, TSV (Through-Silicon Via) process is an advanced three-dimensional integrated circuit packaging technology. This technology achieves vertical connection within the chip, between chips, and between the chip and the package by drilling holes on the chip and filling them with conductive materials. TSV technology can stack chips with different functions together, thereby improving integration, reducing power consumption, and reducing the size of the chip package.
[0015] The TMV (Through-Mold Via, also known as Through-Molding Via) drilling process is an advanced packaging technology that is mainly used to realize vertical interconnection channels in plastic packages. In the TMV process, drilling is one of the key steps, and its purpose is to create vertical channels in plastic packaging materials (such as epoxy resin) to establish electrical connections between chips or other internal components and external circuits. These channels can be used to transmit signals, power or ground lines, etc. The TMV drilling process usually uses laser drilling technology to form the required through holes on the packaging material by precisely controlling the position and energy of the laser beam. Laser drilling has the advantages of high precision, high efficiency, and low damage, and can meet the needs of modern packaging technology for high-density and high-reliability interconnection. After TMV drilling, a series of subsequent treatments are required, such as hole wall cleaning, metallization (deposition of conductive materials on the hole wall), electroplating, etc., to ensure that the through holes have good conductivity and reliability. Ultimately, the vertical interconnection channels achieved by the TMV process can significantly improve the integration of the package, reduce the size, reduce power consumption, and improve the overall performance of the product.
[0016] In some optional implementations, the first conductive line and the second conductive line are formed by filling the first through hole and the second through hole with metallization.
[0017] In some optional embodiments, the through-hole diameters of the first through-hole and the second through-hole are the same as the wire diameters of the third conductive wire and the fourth conductive wire.
[0018] In some optional embodiments, the third conductive line is formed by using an RDL rewiring process on a fifth surface of the molding compound body, and the fourth conductive line is formed by using an RDL rewiring process on a sixth surface of the molding compound body.
[0019] In the above technical solutions, the RDL (Re-Distribution Layer) rewiring process is a technology for manufacturing metal wires during the chip packaging process, which aims to change the original IC circuit contact position (I / O pad). It changes the contact position through wafer-level metal wiring process and bump process, so that the IC can be suitable for different packaging forms.
[0020] In some optional embodiments, the first through hole is perpendicular to the third surface, and the second through hole is perpendicular to the third surface.
[0021] In some optional embodiments, the magnetic core is perpendicular to the first surface.
[0022] In some optional implementations, the third wire is perpendicular to the fifth surface, and the fourth wire is perpendicular to the fifth surface.
[0023] The preparation process flow chart of the power transformer packaging structure provided in the embodiment of the present application specifically includes:
[0024] Step S1, using a Fanout process to plastic-encapsulate a long magnetic core to form a long strip structure of plastic encapsulation material, wherein the long strip structure of plastic encapsulation material wraps the long magnetic core inside.
[0025] Step S2, forming a plurality of first through holes and a plurality of second through holes of the plastic encapsulation material strip structure by TSV drilling of the plastic encapsulation material strip structure using the TSV process, wherein the through hole diameter range of the first through holes and the second through holes is 0.01-5 mm. The plurality of first through holes are arranged on the left side of the long magnetic core and close to the left side surface of the plastic encapsulation material strip structure, and the second through holes are arranged on the right side of the long magnetic core and close to the right side surface of the plastic encapsulation material strip structure.
[0026] Step S3, forming a first conductive line and a second conductive line by filling and metallizing the first through hole and the second through hole, wherein the intermediate dielectric filling material used for the filling and metallization can be a conductive material such as copper and tungsten.
[0027] Step S4, forming a third wire by adopting the RDL rewiring process on the fifth surface of the plastic packaging material strip structure, and forming a fourth wire by adopting the RDL rewiring process on the sixth surface of the plastic packaging material strip structure, the third wire is set on the top surface of the plastic packaging material strip structure, and the fourth wire is set on the bottom surface of the plastic packaging material strip structure, the left sides of the third wire and the fourth wire are respectively connected to the two ends of the first wire, and the right sides of the third wire and the fourth wire are respectively connected to the two ends of the second wire, and the first wire, the second wire, the third wire and the fourth wire constitute a turn of the transformer.
[0028] In this step, an RDL rewiring process is performed on the surface of the long strip structure of the plastic packaging material, so that the wiring on the surface of the long strip structure of the plastic packaging material is connected to the filling dielectric material in the first through hole and the second through hole to form a coil-like structure, thereby achieving a transformer effect. The wire diameter of the RDL rewiring is consistent with the through hole diameter in the TMV process.
[0029] Step S5, cutting the plastic packaging material strip structure to obtain a plurality of plastic packaging material bodies. Specifically, during cutting, the cutting is performed vertically downward in a direction parallel to the third conductive line.
[0030] Since in the process of metallizing the first through hole and the second through hole, there may be a few first through holes or second through holes that are not completely filled with through hole dielectrics, resulting in gaps in the through holes. Therefore, during cutting, these incompletely filled first through holes or second through holes can be cut, so that there are no gaps in the first through holes and the second through holes in the power transformer packaging structure obtained by cutting, thereby reducing the presence of gaps in the through holes.
[0031] An embodiment of the present application also provides a transformer device, including a power transformer packaging structure as described in any one of the above. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0033] Figure 1 A three-dimensional diagram of a power transformer packaging structure provided in an embodiment of the present application;
[0034] Figure 2 A cross-sectional view of a power transformer packaging structure provided in an embodiment of the present application;
[0035] Figure 3 A process flow chart of the preparation of the power transformer packaging structure provided in an embodiment of the present application;
[0036] Figure 4 A three-dimensional diagram of a long strip structure of a plastic sealing material formed by the Fanout process plastic sealing provided in an embodiment of the present application;
[0037] Figure 5 A cross-sectional view of a long strip structure of a plastic encapsulation material formed by the Fanout process plastic encapsulation provided in an embodiment of the present application;
[0038] Figure 6 A three-dimensional diagram of the long strip structure of the TMV plastic packaging material after drilling provided in the embodiment of the present application;
[0039] Figure 7 A cross-sectional view of a long strip of plastic packaging material after TMV drilling provided in an embodiment of the present application;
[0040] Figure 8 A three-dimensional diagram of the plastic packaging material strip structure after the RDL rewiring process provided in the embodiment of the present application;
[0041] Fig. 9 This is a cross-sectional view of the plastic packaging material strip structure after the RDL rewiring process provided in an embodiment of the present application.
[0042] Icon: 1-long magnetic core, 101-magnetic core, 102-first through hole, 103-second through hole, 104-third wire, 105-fourth wire, 2-plastic molding compound strip structure, 201-plastic molding compound body. DETAILED DESCRIPTION
[0043] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.
[0044] Please refer to Figure 1and Figure 2 , Figure 1 A three-dimensional diagram of a power transformer packaging structure provided in an embodiment of the present application, Figure 2 This is a cross-sectional view of a power transformer packaging structure provided in an embodiment of the present application. The power transformer packaging structure specifically includes a plastic packaging material body 201, a magnetic core 101, etc.
[0045] Among them, the molding material body 201, the molding material body 201 is a rectangular parallelepiped structure; the magnetic core 101, the magnetic core 101 passes through the center position of the first surface and the second surface of the molding material body 201; the first surface and the second surface are two opposite surfaces of the molding material body 201; a plurality of first through holes 102 and a plurality of second through holes 103 are arranged in the molding material body 201; the first through hole 102 passes through the third surface and the fourth surface of the molding material body 201, the second through hole 103 passes through the third surface and the fourth surface of the molding material body 201, the first through hole 102 and the second through hole 103 are respectively located on both sides of the magnetic core 101, and ... The hole 102 is not in contact with the magnetic core 101, and the second through hole 103 is not in contact with the magnetic core 101; the third surface and the fourth surface are two opposite surfaces of the plastic encapsulation material body 201; the first through hole 102 is provided with a first wire, and the second through hole 103 is provided with a second wire; a plurality of third wires 104 are provided on the fifth surface of the plastic encapsulation material body 201, and a plurality of fourth wires 105 are provided on the sixth surface of the plastic encapsulation material body 201; each first wire and the corresponding second wire, third wire 104 and fourth wire 105 form a turn of the transformer coil; the fifth surface and the sixth surface are two opposite surfaces of the plastic encapsulation material body 201.
[0046] In the embodiment of the present application, the power transformer packaging structure includes a plastic packaging material body 201, a magnetic core 101, a first wire, a second wire, a third wire 104 and a fourth wire 105. The magnetic core 101 penetrates the plastic packaging material body 201, the first wire fills the first through hole 102 of the plastic packaging material body 201, the second wire fills the second through hole 103 of the plastic packaging material body 201, and the third wire 104 and the fourth wire 105 are arranged on the surface of the plastic packaging material, thereby forming a transformer component structure without a cavity, so that the transformer component after plastic packaging will not form voids, bubbles, etc.
[0047] In some optional implementations, the molding compound body 201 is formed by molding the magnetic core 101 using a Fanout process.
[0048] Among them, the Fanout process, also known as Fan-Out Wafer-Level Packaging (FOWLP for short), is a semiconductor packaging technology. This technology allows more I / O wiring outside the boundaries of the chip, thereby increasing the I / O density, reducing the package size, and also improving electrical performance. Based on advanced Fanout packaging process technology, it has the advantages of miniaturization, low cost and high integration, as well as better performance and higher energy efficiency.
[0049] In some optional implementations, the first through hole 102 and the second through hole 103 of the molding compound body 201 are formed by performing TMV drilling on the molding compound body 201 using a TSV process.
[0050] Among them, the TSV (Through-Silicon Via) process is an advanced three-dimensional integrated circuit packaging technology. This technology realizes vertical connections within the chip, between chips, and between the chip and the package by drilling holes on the chip and filling it with conductive materials. TSV technology can stack chips with different functions together, thereby improving integration, reducing power consumption, and reducing the volume of chip packaging. The TMV (Through-Mold Via, also known as Through-Molding Via) drilling process is an advanced packaging technology, which is mainly used to realize vertical interconnection channels in plastic packaging. In the TMV process, drilling is one of the key steps, and its purpose is to create vertical channels in plastic packaging materials (such as epoxy resin) to establish electrical connections between chips or other internal components and external circuits. These channels can be used to transmit signals, power or ground lines, etc. The TMV drilling process usually uses laser drilling technology to form the required through holes on the packaging material by precisely controlling the position and energy of the laser beam. Laser drilling has the advantages of high precision, high efficiency, and low damage, and can meet the needs of modern packaging technology for high-density and high-reliability interconnection. After TMV drilling, a series of subsequent treatments are required, such as hole wall cleaning, metallization (deposition of conductive material on the hole wall), electroplating, etc., to ensure that the through-hole has good conductivity and reliability. Ultimately, the vertical interconnection channel achieved by the TMV process can significantly improve the integration of the package, reduce the size, reduce power consumption, and improve the overall performance of the product.
[0051] In some optional implementations, the first conductive line and the second conductive line are formed by filling the first through hole 102 and the second through hole 103 with metallization.
[0052] In some optional implementations, the diameters of the first through hole 102 and the second through hole 103 are the same as the diameters of the third conductive wire 104 and the fourth conductive wire 105 .
[0053] In some optional implementations, the third conductive line 104 is formed by using an RDL rewiring process on the fifth surface of the molding compound body 201 , and the fourth conductive line 105 is formed by using an RDL rewiring process on the sixth surface of the molding compound body 201 .
[0054] Among them, the RDL (Re-Distribution Layer) rewiring process is a technology for manufacturing metal wires during the chip packaging process, which aims to change the original IC circuit contact position (I / O pad). It changes the contact position through wafer-level metal wiring process and bump process, so that the IC can be suitable for different packaging forms.
[0055] In some optional implementations, the first through hole 102 is perpendicular to the third surface, and the second through hole 103 is perpendicular to the third surface.
[0056] In some optional implementations, the magnetic core 101 is perpendicular to the first surface.
[0057] In some optional implementations, the third wire 104 is perpendicular to the fifth surface, and the fourth wire 105 is perpendicular to the fifth surface.
[0058] Please refer to Figure 3 , Figure 3 The preparation process flow chart of the power transformer packaging structure provided in the embodiment of the present application specifically includes:
[0059] Step S1, a long magnetic core 1 is plastic-sealed by a Fanout process to form a plastic-sealing material strip structure 2, the plastic-sealing material strip structure 2 is as follows: Figure 4 and Figure 5 As shown, the long strip structure 2 of the molding compound wraps the long magnetic core 1 inside.
[0060] Step S2, forming a plurality of first through holes 102 and a plurality of second through holes 103 of the long strip structure 2 of the plastic packaging material by TSV drilling using the TSV process, wherein the through hole diameters of the first through holes 102 and the second through holes 103 are both in the range of 0.01-5 mm. Figure 6 and Figure 7 As shown, a plurality of first through holes 102 are arranged on the left side of the long magnetic core 1 and close to the left side of the plastic packaging material strip structure 2, and a second through hole 103 is arranged on the right side of the long magnetic core 1 and close to the right side of the plastic packaging material strip structure.
[0061] Step S3, forming a first conductive line and a second conductive line by filling and metallizing the first through hole 102 and the second through hole 103, wherein the intermediate dielectric filling material used for the filling and metallization can be a conductive material such as copper and tungsten.
[0062] Step S4: forming a third wire 104 by using an RDL rewiring process on the fifth surface of the molding material strip structure 2, and forming a fourth wire 105 by using an RDL rewiring process on the sixth surface of the molding material strip structure 2. Figure 8 and Fig. 9 As shown, a third wire 104 is arranged on the top surface of the long strip structure 2 of the plastic packaging material, and a fourth wire 105 is arranged on the bottom surface of the long strip structure 2 of the plastic packaging material. The left sides of the third wire 104 and the fourth wire 105 are respectively connected to the two ends of the first wire, and the right sides of the third wire 104 and the fourth wire 105 are respectively connected to the two ends of the second wire. The first wire, the second wire, the third wire 104 and the fourth wire 105 constitute a turn of the transformer.
[0063] In this step, an RDL rewiring process is performed on the surface of the molding compound strip structure 2, so that the wiring on the surface of the molding compound strip structure 2 is connected to the filling dielectric material in the first through hole 102 and the second through hole 103 to form a coil-like structure, thereby achieving a transformer effect. The wire diameter of the RDL rewiring is consistent with the through hole diameter in the TMV process.
[0064] Step S5 , cutting the long strip structure 2 of the molding compound to obtain a plurality of molding compound bodies 201 . Specifically, during the cutting, the cutting is performed vertically downward in a direction parallel to the third conductive wire 104 .
[0065] Since in the process of metallizing the first through hole 102 and the second through hole 103, there may be a few first through holes 102 or second through holes 103 that are not completely filled with through hole dielectrics, resulting in gaps in the through holes. Therefore, during cutting, these incompletely filled first through holes 102 or second through holes 103 may be cut, so that there are no gaps in the first through holes 102 and the second through holes 103 in the power transformer packaging structure obtained by cutting, thereby reducing the presence of gaps in the through holes.
[0066] An embodiment of the present application also provides a transformer device, including a power transformer packaging structure as described in any one of the above.
[0067] In the embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.
[0068] In addition, the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0069] Furthermore, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
[0070] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.
[0071] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A power transformer packaging structure, characterized in that: include: A plastic encapsulation material body, wherein the plastic encapsulation material body is a rectangular parallelepiped structure; A magnetic core, the magnetic core passes through the center of the first surface and the second surface of the molding material body; the first surface and the second surface are two opposite surfaces of the molding material body; A plurality of first through holes and a plurality of second through holes are provided in the main body of the plastic encapsulation material; the first through holes penetrate the third surface and the fourth surface of the main body of the plastic encapsulation material, the second through holes penetrate the third surface and the fourth surface of the main body of the plastic encapsulation material, the first through holes and the second through holes are respectively located on both sides of the magnetic core, and the first through holes are not in contact with the magnetic core, and the second through holes are not in contact with the magnetic core; the third surface and the fourth surface are two opposite surfaces of the main body of the plastic encapsulation material; A first conductive wire is disposed in the first through hole, and a second conductive wire is disposed in the second through hole; A plurality of third wires are arranged on the fifth surface of the plastic encapsulation material body, and a plurality of fourth wires are arranged on the sixth surface of the plastic encapsulation material body; each first wire and the corresponding second wire, third wire and fourth wire form a coil of the transformer; the fifth surface and the sixth surface are two opposite surfaces of the plastic encapsulation material body.
2. The power transformer packaging structure according to claim 1, characterized in that: The plastic encapsulation material body is formed by encapsulating the magnetic core using a Fanout process.
3. The power transformer packaging structure according to claim 2, characterized in that: The first through hole and the second through hole of the molding compound body are formed by performing TMV drilling on the molding compound body using a TSV process.
4. The power transformer packaging structure according to claim 3, characterized in that: The first conductive line and the second conductive line are formed by filling the first through hole and the second through hole with metallization.
5. The power transformer packaging structure according to claim 4, characterized in that: The through-hole diameters of the first through-hole and the second through-hole are the same as the wire diameters of the third wire and the fourth wire.
6. The power transformer packaging structure according to claim 1, characterized in that: The third conductive line is formed by using an RDL rewiring process on the fifth surface of the molding compound body, and the fourth conductive line is formed by using an RDL rewiring process on the sixth surface of the molding compound body.
7. The power transformer packaging structure according to claim 1, characterized in that: The first through hole is perpendicular to the third surface, and the second through hole is perpendicular to the third surface.
8. The power transformer packaging structure according to claim 1, characterized in that: The magnetic core is perpendicular to the first surface.
9. The power transformer packaging structure according to claim 1, characterized in that: The third conductive line is perpendicular to the fifth surface, and the fourth conductive line is perpendicular to the fifth surface.
10. A transformer device, characterized in that: It comprises a power transformer packaging structure as described in any one of claims 1-9.