Semiconductor plasma equipment and negative pressure exhaust device thereof

Abstract

The utility model discloses semiconductor plasma equipment and a negative pressure exhaust device thereof, and the negative pressure exhaust device is used for being jointed with a waste gas exhaust port of a plasma reaction chamber of the semiconductor plasma equipment and comprises a three-way pipe, an air pump and a plasma generator. The plasma generator is connected between one pipe opening of one main pipe of the three-way pipe and the first waste gas exhaust port, and the sucking pump is connected to the other pipe opening of the main pipe of the three-way pipe; thus, when the sucking pump is started, the plasma reaction chamber is subjected to air suction, negative pressure airflow is generated, the negative pressure airflow firstly passes through the plasma chamber of the plasma generator, then plasma generated by the plasma chamber is brought to the main pipe of the three-way pipe by the negative pressure airflow, and then the inner wall face of the main pipe is cleaned. And the frequency of manually cleaning or maintaining the three-way pipe is reduced.

Description

Technical Field

[0001] The utility model relates to a negative pressure exhaust device for semiconductor plasma equipment, in particular to a negative pressure exhaust device with a plasma cleaning function. Background Art

[0002] In semiconductor manufacturing, plasma technology is used to implement different semiconductor manufacturing steps, such as sputtering and plasma chemical vapor deposition (PECVD) in thin film deposition steps; dry etching in etching steps; and in implantation technology, the ion source of the ion implanter and plasma immersion ion implantation.

[0003] See also Figure 4 As shown, a plasma assisted chemical vapor deposition (PECVD) device includes a plasma reaction chamber 50, a vacuum exhaust device 60 and a remote plasma source device 64; wherein the vacuum exhaust device 60 is arranged on the bottom surface 52 of the plasma reaction chamber 50, and is responsible for evacuating the plasma reaction chamber 50 before the deposition process, and the remote plasma source device 64 is arranged on the top surface 51 of the plasma reaction chamber 50.

[0004] The vacuum exhaust device 60 includes an exhaust pipeline 61 and two exhaust pumps 62 and 63, wherein one exhaust pump 62 is responsible for exhausting the plasma reaction chamber 50 to a vacuum state through the exhaust pipeline 61, and then simultaneously starting the other exhaust pump 63 to exhaust gas to maintain the high vacuum state of the plasma reaction chamber 50, so that the gas extracted from the plasma reaction chamber 50 is discharged to the outside through the exhaust pipeline 61. When the plasma reaction chamber 50 is in a vacuum state, the deposition process is carried out. After the deposition process is completed, the two exhaust pumps 62 and 63 are still kept started, and the remote plasma source device 64 is started to generate cleaning plasma in the plasma reaction chamber 50 to clean the deposition particles attached to the inner wall surface due to the deposition process. At this time, the cleaned particles in the plasma reaction chamber 50 are continuously discharged to the outside through the exhaust pipeline 61.

[0005] As can be seen from the above description, during the deposition process, since the vacuum pump of the vacuum exhaust device is continuously started, the particles generated by the deposition process will not only adhere to the inner wall surface of the plasma reaction chamber, but will also be discharged into the exhaust pipe, and will also adhere to the pipe wall of the exhaust pipe, and even adhere to the exhaust pump; therefore, currently the personnel in the semiconductor factory need to manually shut down the machine for cleaning and maintenance at intervals, that is, the exhaust pipe needs to be disassembled for cleaning and then reinstalled to ensure the vacuum pumping capacity of the exhaust pipe to stabilize the deposition quality of the plasma reaction chamber.

[0006] However, the loss caused by shutting down the plasma-assisted chemical vapor deposition equipment for cleaning the exhaust pipe is huge, and the manual cleaning of the exhaust pipe is complicated and generates additional industrial waste liquid, and especially causes uncontrollable particle dust for semiconductor equipment with advanced processes (below 10nm). Therefore, further efforts should be made to seek more effective technologies for cleaning the exhaust pipes of the above-mentioned semiconductor plasma equipment. Utility Model Content

[0007] In view of the above-mentioned problems of the difficulty in cleaning the exhaust pipeline of the semiconductor plasma equipment and the generation of dust particles, the main purpose of the utility model is to provide a semiconductor plasma equipment and a negative pressure exhaust device thereof, which can eliminate the need for manual cleaning and maintenance operations.

[0008] The main technical means used to achieve the above purpose is to make the semiconductor plasma equipment include:

[0009] A plasma reaction chamber is provided with a plasma inlet, a first exhaust gas outlet and a second exhaust gas outlet;

[0010] a first plasma generator, disposed at the plasma inlet of the plasma reaction chamber, to provide a sufficient amount of plasma for cleaning the plasma reaction chamber; and

[0011] A negative pressure exhaust device is disposed at the first exhaust outlet and the second exhaust outlet of the plasma reaction chamber, and comprises:

[0012] A three-way pipe, comprising a main pipe and a side pipe connected to each other, the main pipe having a first pipe opening and a second pipe opening, and the side pipe comprising a third pipe opening;

[0013] a first vacuum pump connected to the second pipe port of the main pipe of the three-way pipe, extracting air in the plasma reaction chamber and generating a negative pressure airflow passing through the main pipe of the three-way pipe, so that the plasma reaction chamber is in a negative pressure state;

[0014] a second air pump connected to the second exhaust outlet of the plasma reaction chamber and the third pipe opening of the side pipe of the three-way pipe to extract air from the plasma reaction chamber to maintain a negative pressure state in the plasma reaction chamber; and

[0015] A second plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is connected to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure airflow passes through the plasma chamber and enters the main pipe of the three-way pipe, and the second plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure airflow exists.

[0016] As can be seen from the above description, the semiconductor plasma equipment of the utility model is mainly equipped with two plasma generators to respectively provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe to clean the inner wall surface; wherein the second plasma generator is arranged at the first pipe opening of the main pipe of the three-way pipe, and when the first vacuum pump evacuates the plasma reaction chamber, the negative pressure airflow will pass through its plasma chamber, so that when the negative pressure airflow passes through the plasma chamber, the particles therein will be eliminated by the plasma, and the plasma will be brought to the main pipe of the three-way pipe, so as to more efficiently clean the inner wall surface of the main pipe, and continuously maintain the inner wall of the main pipe without deposition of particles, so as to effectively reduce the frequency of manual cleaning of the three-way pipe or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment with advanced processes (below 10nm) that are susceptible to particulate dust.

[0017] The main technical means used to achieve the above purpose is to make the negative pressure exhaust device of the semiconductor plasma equipment include:

[0018] A three-way pipe, comprising a main pipe and a side pipe connected to each other, the main pipe having a first pipe opening and a second pipe opening, and the side pipe comprising a third pipe opening;

[0019] A first air pump connected to the second pipe opening of the main pipe of the three-way pipe and generating a negative pressure air flow through the main pipe of the three-way pipe;

[0020] a second vacuum pump connected to a second exhaust gas outlet of a plasma reaction chamber and connected to the third outlet of the side pipe of the three-way pipe; and

[0021] A second plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is connected to a first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure airflow passes through the plasma chamber and enters the main pipe of the three-way pipe, and the plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure airflow exists.

[0022] As can be seen from the above description, the negative pressure exhaust device of the semiconductor plasma equipment of the utility model is used to connect with the first and second exhaust gas outlets of the plasma reaction chamber, and the plasma generator is mainly set at the first pipe opening of the main pipe of the three-way pipe; in this way, the negative pressure airflow generated by the exhaust of the plasma reaction chamber will first pass through the plasma chamber of the plasma generator, and then when the negative pressure airflow passes through the plasma chamber, the particles therein will be eliminated, and the plasma will be brought to the main pipe of the three-way pipe, thereby cleaning the inner wall surface of the main pipe, and continuously maintaining the inner wall of the main pipe without deposition of particles, so as to effectively reduce the frequency of manual cleaning of the three-way pipe or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment with advanced processes (below 10nm) that are susceptible to particulate dust. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A cross-sectional schematic diagram of a first embodiment of the semiconductor plasma device of the utility model;

[0024] Figure 2 A three-dimensional appearance diagram of the second plasma generator of the present invention connected with a three-way pipe;

[0025] Figure 3 A cross-sectional schematic diagram of a second embodiment of the semiconductor plasma device of the present utility model;

[0026] Figure 4 A cross-sectional schematic diagram of a plasma-assisted chemical vapor deposition device in the prior art;

[0027] Wherein, the reference numerals are:

[0028] 10: plasma reaction chamber; 100: top surface;

[0029] 101: bottom surface; 11: plasma inlet;

[0030] 12: first exhaust gas outlet; 13: second exhaust gas outlet;

[0031] 20: first plasma generator; 21: plasma chamber;

[0032] 22: matching circuit; 23: power supply device;

[0033] 30: negative pressure exhaust device; 31: three-way pipe;

[0034] 32: Main pipe; 321: First pipe opening;

[0035] 322: second pipe opening; 33: side pipe;

[0036] 331: third pipe port; 34: first air pump;

[0037] 35: second air pump; 351: fourth air valve;

[0038] 36: first air valve; 37: second air valve;

[0039] 38: third gas valve; 39: control unit;

[0040] 40: a second plasma generator; 41: a plasma chamber;

[0041] 411: first opening; 412: second opening;

[0042] 42: housing; 43: first flange joint;

[0043] 44: second flange joint; 45: gas channel;

[0044] 46: third flange joint; 461: fifth gas valve;

[0045] 462: external gas pipe; 47: coil;

[0046] 48: matching circuit; 49: power supply device;

[0047] 50: plasma reaction chamber; 51: top surface;

[0048] 52: bottom surface; 60: vacuum exhaust device;

[0049] 61: air extraction pipeline; 62: air extraction pump;

[0050] 63: vacuum pump; 64: remote plasma source device. DETAILED DESCRIPTION

[0051] The utility model provides a semiconductor plasma equipment with a negative pressure exhaust device, and the technical content is described in detail below with reference to a plurality of embodiments and drawings.

[0052] First see Figure 1 FIG. 1 is a first embodiment of the semiconductor plasma equipment of the present invention, which includes a plasma reaction chamber 10 , a first plasma generator 20 and a negative pressure exhaust device 30 .

[0053] The plasma reaction chamber 10 is used for placing semiconductor wafers therein to perform semiconductor processes, such as a plasma-assisted chemical vapor deposition chamber, but not limited thereto. The plasma reaction chamber 10 includes a top surface 100, a bottom surface 101, a first exhaust gas outlet 12, and a second exhaust gas outlet 13; in this example, the plasma inlet 11 is located on the top surface 100 of the plasma reaction chamber 10, and the first and second exhaust gas outlets 12 and 13 are located on the bottom surface 101 of the plasma reaction chamber 10.

[0054] The first plasma generator 20 is disposed at the plasma inlet 11 of the top surface 100 of the plasma reaction chamber 10, and comprises a plasma generating chamber 21, a matching circuit 22 (or a coil) and a power supply device 23. The first plasma generator 20 is used to generate a cleaning plasma for the plasma reaction chamber 10; wherein the first plasma generator 20 uses an external gas for plasma ignition, and the external gas can be CF4 or NF3.

[0055] The negative pressure exhaust device 30 is disposed at the first exhaust outlet 12 and the second exhaust outlet 13 of the plasma reaction chamber 10, and includes a three-way pipe 31, a first air pump 34, a second air pump 35 and a second plasma generator 40. The three-way pipe 31 includes a main pipe 32 and a side pipe 33 that are interconnected. The main pipe 32 has a first pipe opening 321 and a second pipe opening 322, and the side pipe 33 includes a third pipe opening 331. The first air pump 34 is connected to the second pipe opening 322 of the main pipe 32 of the three-way pipe 31 to extract the air in the plasma reaction chamber 10 and generate a negative pressure airflow F through the main pipe 32 of the three-way pipe 31, so that the plasma reaction chamber 10 is in a negative pressure state. The second air pump 35 is connected to the second exhaust outlet 13 of the plasma reaction chamber 10 and the third pipe port 331 of the side pipe 33 of the three-way pipe 31 to extract air in the plasma reaction chamber 10 so as to maintain a negative pressure in the plasma reaction chamber 10. In this embodiment, the second air pump 35 is a turbomolecular pump and has a fourth air valve 351. The second air pump 35 is connected to the second exhaust outlet 13 of the plasma reaction chamber 10 through the fourth air valve 351.

[0056] The second plasma generator 40 of the negative pressure exhaust device 30 has a plasma chamber 41, which is connected to a power supply device 49 through a matching circuit 48 to generate a sufficient amount of cleaning plasma. The plasma chamber 41 has a first opening 411 and a second opening 412. Figure 2As shown, a first flange joint 43 is provided on a housing 42 of the second plasma generator 40 to communicate with the first opening 411 and to be connected to the first exhaust outlet 12 of the plasma reaction chamber 10, so that the first opening 411 is connected to the first exhaust outlet 12; and the housing 42 is further provided with a second flange joint 44 to communicate with the second opening 412 and to be connected to the first pipe opening 321 of the main pipe 32 of the three-way pipe 31, so that the second opening 412 can be connected to the first pipe opening 321. In addition, a gas channel 45 connected to the plasma chamber 41 is added in the housing 42, and the housing 42 can be further provided with a third flange joint 46, which is connected to the gas channel 45 and is connected to an external gas pipe 462, so that the external gas enters the plasma chamber 41, and the external gas can be CF4 or NF3. In another embodiment, since the second plasma generator 40 only needs to generate a sufficient amount of cleaning plasma for the main pipe 32 of the three-way pipe 31, the gas used for ionization can use the remaining external gas in the negative pressure airflow for plasma ignition, that is, the gas input into the first plasma generator 20 during the pumping period but not ionized enters the second plasma generator 40 with the negative pressure airflow F, and the power of the second plasma generator 40 is less than the power of the first plasma generator 20, which can be between 100W and 300W, and its frequency is between 4MHz and 13MHz, and the cleaning efficiency is In one embodiment, the second plasma generator 40 may be an inductively coupled plasma generator, wherein an inductive element such as an ignition coil 47 is disposed outside the plasma chamber 41 , and the ignition coil 47 is connected to the power supply device 49 (ie, power supply) through the matching circuit 48 or the coil.

[0057] The first exhaust pump 34 is first activated to extract the negative pressure of the plasma reaction chamber 10 until it reaches a vacuum state (about several hundred mTorr level), and then the second exhaust pump 35 is simultaneously activated to extract the negative pressure to maintain the high vacuum state of the plasma reaction chamber 10 so that the plasma reaction chamber 10 can perform semiconductor processes. After the semiconductor process is completed, the first plasma generator 20 and the second plasma generator 40 are activated, and the first plasma generator 20 sends the generated cleaning plasma into the plasma inlet 11 of the top surface 100 of the plasma reaction chamber 10 to clean the inner wall of the plasma reaction chamber 10 due to particles generated during the semiconductor process. The cleaned waste gas is discharged to the outside through the second plasma generator 40, the main pipe 32 of the three-way pipe 31 and the first exhaust pump 34 by the negative pressure airflow generated by the air extraction of the first exhaust pump 34. At this time, since the second plasma generator 40 is also activated and located between the plasma reaction chamber 10 and the tee pipe 31, the cleaning plasma generated by the second plasma generator 40 will be sent into the main pipe 32 of the tee pipe 31 along with the negative pressure airflow to more efficiently clean the main pipe 32 of the tee pipe 31; thus, the main pipe 32 of the tee pipe 31 can be cleaned at the same time during the cleaning of the plasma reaction chamber 10.

[0058] In addition, the semiconductor plasma equipment of the present invention may further include a first gas valve 36, a second gas valve 37, a third gas valve 38 and a control unit 39. The first gas valve 36 is disposed in the main pipe 32 of the three-way pipe 31; the second gas valve 37 is disposed in the side pipe 33 of the three-way pipe 31; the third gas valve 38 is disposed between the first exhaust gas outlet 12 and the first opening 411 of the second plasma generator 40, and the control unit 39 is electrically connected to the first and second plasma generators 20, 40, the first to third gas valves 36, 37, 38, the first and second vacuum pumps 34, 35 and the fourth gas valve 351 of the second vacuum pump 35, and has a built-in process program and a cleaning program.

[0059] The process program starts the first vacuum pump 34 through the control unit 39, and opens the first and third gas valves 36 and 38, so that the first vacuum pump 34 evacuates the plasma reaction chamber 10 through the main pipe 32 of the three-way pipe 31. When the negative pressure state of the plasma reaction chamber 10 reaches the vacuum level (about several hundred mTorr level), the first gas valve 36 and the first vacuum pump 34 are maintained open, the third gas valve 38 is closed, the second gas valve 37 and the fourth gas valve 351 are opened, and the second vacuum pump 35 is started to maintain the vacuum state in the plasma reaction chamber 10 for performing semiconductor processes.

[0060] The above cleaning procedure starts to be executed after the semiconductor process in the process procedure is finished. The control unit 39 maintains the first gas valve 36 and the first vacuum pump 34 open, closes the fourth gas valve 351 of the second vacuum pump 35 and the second gas valve 37, opens the third gas valve 38, and starts the first and second plasma generators 20 and 40; wherein the first and second plasma generators 20 and 40 respectively provide sufficient cleaning plasma to the plasma reaction chamber 10 and the main pipe 32 of the three-way pipe 31. Figure 3 As shown, the second embodiment of the semiconductor plasma equipment of the utility model further provides a fifth gas valve 461 in the external gas pipe 462, and the control unit 39 is electrically connected to the fifth gas valve 461 and controls the valve opening of the fifth gas valve 461 to determine the amount of external gas flowing into the gas channel 45.

[0061] In summary, the semiconductor plasma equipment of the present invention is mainly provided with two plasma generators to respectively provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe for cleaning the inner wall surface; wherein the second plasma generator 40 is arranged at the first pipe port of the main pipe of the three-way pipe, and when the first vacuum pump evacuates the plasma reaction chamber, the negative pressure airflow will pass through its plasma chamber, so when the negative pressure airflow passes through the plasma chamber, the particles therein will be eliminated by the plasma, and the plasma will be brought to the main pipe of the three-way pipe to clean the inner wall surface of the main pipe, and continuously maintain the inner wall of the main pipe without deposition of particles, effectively reducing the frequency of manual cleaning of the three-way pipe or replacement of the three-way pipe, which is particularly suitable for semiconductor plasma equipment of advanced processes (below 10nm) that are susceptible to particulate dust.

[0062] The above description is only an embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as above by the embodiment, it is not used to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A semiconductor plasma device, characterized in that: include: A plasma reaction chamber is provided with a plasma inlet, a first exhaust gas outlet and a second exhaust gas outlet; a first plasma generator, disposed at the plasma inlet of the plasma reaction chamber, to provide a sufficient amount of plasma for cleaning the plasma reaction chamber; and A negative pressure exhaust device is disposed at the first exhaust outlet and the second exhaust outlet of the plasma reaction chamber, and comprises: A three-way pipe, comprising a main pipe and a side pipe connected to each other, the main pipe having a first pipe opening and a second pipe opening, and the side pipe comprising a third pipe opening; a first vacuum pump connected to the second pipe port of the main pipe of the three-way pipe, extracting air in the plasma reaction chamber and generating a negative pressure airflow through the main pipe of the three-way pipe, so that the plasma reaction chamber is in a negative pressure state; a second air pump connected to the second exhaust outlet of the plasma reaction chamber and the third pipe opening of the side pipe of the three-way pipe to extract air from the plasma reaction chamber to maintain a negative pressure state in the plasma reaction chamber; as well as A second plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is connected to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure airflow passes through the plasma chamber and enters the main pipe of the three-way pipe, and the second plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure airflow exists.

2. The semiconductor plasma device according to claim 1, characterized in that: Further including: a first gas valve, disposed in the main pipe of the three-way pipe; a second air valve, disposed in the side pipe of the tee pipe; a third gas valve disposed between the first exhaust gas outlet and the first opening of the second plasma generator; a fourth air valve, disposed at the junction of the second air pump and the second exhaust gas outlet; as well as A control unit is electrically connected to the first and second plasma generators, the first and second vacuum pumps, and the first to fourth gas valves, and has: a process sequence, wherein the control unit starts the first pump and opens the first and third gas valves, so that the first pump exhausts gas from the plasma reaction chamber through the main pipe of the three-way pipe. When the negative pressure state of the plasma reaction chamber reaches a vacuum state, the first gas valve and the first pump are kept open, the third gas valve is closed, the second gas valve and the fourth gas valve are opened, and the second pump is started to maintain the vacuum state in the plasma reaction chamber so as to perform a semiconductor process; and A cleaning procedure is executed after the semiconductor process in the process procedure is completed. The control unit maintains the first gas valve and the first vacuum pump open, closes the second gas valve and the fourth gas valve, opens the third gas valve, and starts the first and second plasma generators; wherein the first and second plasma generators respectively provide sufficient cleaning plasma to the plasma reaction chamber and the main pipe of the three-way pipe.

3. The semiconductor plasma device according to claim 2, wherein: The first plasma generator obtains an external gas and ignites it to generate a cleaning plasma; and The second plasma generator obtains another external gas and ignites to generate cleaning plasma.

4. The semiconductor plasma device according to claim 1 or 2, characterized in that: The first plasma generator obtains an external gas and ignites it to generate a cleaning plasma; and The second plasma generator uses the remaining additional gas in the negative pressure gas flow to ignite and generate cleaning plasma.

5. The semiconductor plasma device according to claim 3, characterized in that: The second plasma generator is an inductively coupled plasma generator, in which an inductive element is disposed outside the plasma chamber, and the inductive element is electrically connected to a power supply through an impedance matcher.

6. The semiconductor plasma device according to claim 5, characterized in that: The plasma chamber of the second plasma generator is disposed in a housing, and the housing is provided with: a first flange joint, communicating with the first opening of the plasma chamber and matchingly connected to the first exhaust gas outlet of the plasma reaction chamber; and A second flange joint is matched and connected to the first pipe opening of the main pipe of the tee pipe.

7. The semiconductor plasma device according to claim 6, characterized in that: The shell is further provided with a third flange joint to match a pipe opening of an external gas pipe.

8. The semiconductor plasma device according to claim 7, characterized in that: The power of the second plasma generator is between 100W and 300W, and the frequency is between 4MHz and 13MHz.

9. The semiconductor plasma device according to claim 8, characterized in that: The external gas used by the first and second plasma generators is CF4 or NF3.

10. The semiconductor plasma device according to claim 7, characterized in that: The external gas pipe is provided with a fifth gas valve, and the control unit is electrically connected to the fifth gas valve and controls the valve opening of the fifth gas valve.

11. A negative pressure exhaust device for semiconductor plasma equipment, characterized in that: A first and a second exhaust gas outlet are disposed in a plasma reaction chamber and include: A three-way pipe, comprising a main pipe and a side pipe connected to each other, the main pipe having a first pipe opening and a second pipe opening, and the side pipe comprising a third pipe opening; a first air pump connected to the second pipe opening of the main pipe of the three-way pipe and generating a negative pressure airflow through the main pipe of the three-way pipe; a second vacuum pump connected to the second exhaust gas outlet of the plasma reaction chamber and connected to the third pipe opening of the side pipe of the three-way pipe; and A plasma generator has a plasma chamber, the plasma chamber has a first opening and a second opening; wherein the first opening is connected to the first exhaust gas outlet of the plasma reaction chamber, and the second opening is connected to the first pipe opening of the main pipe of the three-way pipe; wherein the negative pressure airflow enters the main pipe of the three-way pipe after passing through the plasma chamber, and the plasma generator provides sufficient cleaning plasma to the main pipe of the three-way pipe where the negative pressure airflow exists.

12. The negative pressure exhaust device for semiconductor plasma equipment according to claim 11, characterized in that: Further including: a first gas valve, disposed in the main pipe of the three-way pipe; a second air valve, disposed in the side pipe of the tee pipe; a third gas valve disposed at the first opening of the plasma generator; a fourth air valve, disposed at the junction of the second air pump and the second exhaust gas outlet; as well as A control unit is electrically connected to the plasma generator, the first and second vacuum pumps, and the first to fourth gas valves. When the plasma generator is started, the first and third gas valves are opened, the second gas valve and the fourth gas valve are closed, and the first and second vacuum pumps are started to generate a sufficient amount of cleaning plasma for the main pipe of the three-way pipe.

13. The negative pressure exhaust device for semiconductor plasma equipment according to claim 12, characterized in that: The plasma generator obtains an external gas and ignites it to generate cleaning plasma.

14. The negative pressure exhaust device for semiconductor plasma equipment according to claim 13, characterized in that: The plasma generator is an inductively coupled plasma generator, in which an inductive element is disposed outside the plasma chamber, and the inductive element is electrically connected to a power supply through an impedance matcher.

15. The negative pressure exhaust device for semiconductor plasma equipment according to claim 14, characterized in that: The plasma chamber of the plasma generator is disposed in a housing, and the housing is provided with: a first flange joint, communicating with the first opening of the plasma chamber and being matched and connected to the first exhaust outlet of the plasma reaction chamber; and A second flange joint is matched and connected to the first pipe opening of the main pipe of the tee pipe.

16. The negative pressure exhaust device for semiconductor plasma equipment according to claim 15, characterized in that: The shell is further provided with a third flange joint to match a pipe opening of an external gas pipe.

17. The negative pressure exhaust device for semiconductor plasma equipment according to claim 16, characterized in that: The power of the plasma generator is between 100W and 300W, and the frequency is between 4MHz and 13MHz.

18. The negative pressure exhaust device for semiconductor plasma equipment according to claim 17, characterized in that: The external gas used in the plasma generator is CF4 or NF3.

19. The negative pressure exhaust device for semiconductor plasma equipment according to claim 16, characterized in that: The external gas pipe is provided with a fifth gas valve, and the control unit is electrically connected to the fifth gas valve and controls the valve opening of the fifth gas valve.

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