Reaction device

Abstract

The utility model discloses a reaction device. The reaction device comprises a furnace body and at least one containing assembly, a containing cavity and a furnace opening communicated with the containing cavity are formed in the furnace body, the containing cavity is used for containing a silicon wafer, the silicon wafer reacts in the containing cavity, and metaphosphoric acid can be generated in the containing cavity when the furnace opening is opened. The containing assembly comprises a carrying disc arranged in the containing cavity in a connected mode, the carrying disc is provided with a top face, and the top face is used for containing metaphosphoric acid. According to the reaction device, metaphosphoric acid generated in the containing cavity when the furnace opening is opened is contained and received through the carrying disc, and the purpose of reducing pollution and damage of metaphosphoric acid to the main body is achieved. When the loading disc contains too much metaphosphoric acid, the loading disc containing the metaphosphoric acid is taken out of the containing cavity through the movable arrangement of the loading disc in the containing cavity, and the effects that the metaphosphoric acid is convenient to pour and the loading disc is convenient to clean are achieved. The problem that the reaction equipment is difficult to clean and easy to damage due to the fact that dripping metaphosphoric acid is accumulated in the reaction equipment when the reaction equipment is used for processing silicon wafers is solved.

Description

Technical Field

[0001] The present application relates to the technical field of processing equipment, and in particular to a reaction device. Background Art

[0002] In the processing of some products (such as silicon wafers), it is usually necessary to put the processed object into a reactor, and then introduce an excess of reaction gas into the reactor in a high-temperature environment to increase the reaction rate and form the processed object into a product. However, excessive reaction gas will produce too much waste gas, such as P 2 O 5 (phosphorus pentoxide) and Cl 2 (chlorine). During the silicon wafer reaction process, waste gases (such as P 2 O 5 ) will react with water in the air to produce acidic and other corrosive liquids (such as P 2 O 5 The dripping liquid will accumulate in the reactor, especially in the inner cavity of the reactor near its furnace mouth, making the reactor difficult to clean and easy to damage. Utility Model Content

[0003] In view of this, the present application provides a reaction device to solve the problem that dripping liquid accumulates in a reaction furnace, making the reaction furnace difficult to clean and easy to damage.

[0004] The present application provides a reaction device, which includes a furnace body and at least one receiving assembly. The furnace body is provided with a cavity and a furnace opening connected to the cavity, and the cavity has a first area and a second area along the extension direction of the furnace body, the first area is closer to the furnace opening than the second area, and the second area is used to accommodate a to-be-reacted substance. The receiving assembly includes a carrier plate connected to the cavity, the carrier plate having a top surface, and the top surface is used to receive the liquid generated in the first area.

[0005] In the above embodiment, the reactants are placed in the first area for reaction. After the reaction is completed, when the product is taken out, the liquid generated by the reaction with water in the air is received by the carrier plate, so as to reduce the pollution and damage to the furnace body caused by the liquid. When the carrier plate receives too much liquid, the carrier plate is movably arranged in the cavity to take out the carrier plate containing the liquid from the cavity, so as to facilitate the pouring of the liquid and the cleaning of the carrier plate.

[0006] In some embodiments, the receiving assembly includes a protrusion, which is located on the top surface. The protrusion and the top surface enclose a receiving space, and the receiving space is used to contain liquid.

[0007] In some embodiments, the carrier plate is arranged in an arc-shaped sheet shape, and along the central axis direction of the furnace body, the carrier plate has a first end and a second end opposite to each other, and both the first end and the second end are provided with a protrusion.

[0008] In some embodiments, protrusions are respectively provided on both sides of the carrier plate along a direction perpendicular to the central axis of the furnace body, and all the protrusions on the top surface are sequentially connected end to end so that all the protrusions are ring-shaped.

[0009] In some embodiments, the furnace body is arranged in a tubular shape, the carrier plate has a bottom surface opposite to the top surface, and the curvature of the bottom surface is equal to the curvature of the inner diameter of the furnace body. When the carrier plate is located in the furnace body, the bottom surface of the carrier plate contacts the inner side wall of the furnace body.

[0010] In some embodiments, the protrusion is arranged in a ring shape.

[0011] In some embodiments, the reaction device further comprises a material taking assembly movably arranged relative to the furnace body, the material taking assembly comprises a material taking rod and a material taking hook, and the material taking hook is fixedly connected to one end of the material taking rod. The material taking assembly is used to drive the carrier plate to move out of the cavity through the material taking hook under the action of external force. The material taking rod is used to drive the material taking hook to move in the cavity. The material taking hook is used to drive the carrier plate in the cavity to move out of the cavity.

[0012] In some embodiments, a heat insulation structure is provided in the first region, and the heat insulation structure is used to insulate the second region and the furnace opening.

[0013] In some embodiments, the carrier plate and the thermal insulation structure are arranged along the direction of gravity, and the carrier plate is located below the thermal insulation structure.

[0014] In some embodiments, along the length direction of the furnace body, the length of the carrier plate is greater than the length of the thermal insulation structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A partial structural schematic diagram of a reaction device provided in one embodiment of the present application.

[0016] Figure 2 A schematic structural diagram of a receiving assembly of a reaction device provided in one embodiment of the present application.

[0017] Figure 3 A schematic structural diagram of a receiving assembly provided in another embodiment of the present application.

[0018] Figure 4 A schematic structural diagram of a material taking component of a reaction device provided in one embodiment of the present application.

[0019] Main component symbols

[0020] 100. reaction device; 11. furnace body; 111. cavity; 1111. first area; 1112. second area; 112. furnace mouth; 12. receiving assembly; 121. carrier plate; 1211. top surface; 1212. bottom surface; 1213. first end; 1214. second end; 122. protrusion; 123. receiving space; 13. material taking assembly; 131. material taking rod; 132. material taking hook; 14. thermal insulation structure. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0022] It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a central component at the same time. When a component is considered to be "located on" another component, it may be directly located on the other component or there may be a central component at the same time. The terms "top", "bottom", "upper", "lower", "left", "right", "front", "back", and similar expressions used herein are for illustrative purposes only.

[0023] Unless otherwise specified, the term "plurality" used herein refers to two or more than two, and "several" refers to one or more than one.

[0024] The terms "first", "second", etc. are only used to distinguish different objects and shall not be understood as indicating or implying relative importance or implying the quantity, specific order or primary and secondary relationship of the indicated technical features.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0026] The present application discloses a reaction device, which comprises a furnace body and at least one receiving assembly. The furnace body is provided with a cavity and a furnace port connected to the cavity, and the cavity has a first area and a second area along the extension direction of the furnace body, and the second area is used to accommodate a to-be-reacted substance. The receiving assembly comprises a carrier plate connected to the cavity, and the carrier plate has a top surface, and the top surface is used to receive the liquid generated in the first area.

[0027] The reactants are placed in the cavity for reaction. When the reactants generate products, the furnace port needs to be opened to take the products out of the cavity. Cold air will enter the first area from the furnace port. The exhaust gas in the first area will react with water in the air to produce corrosive liquid when it is cooled. The liquid is collected by the carrier plate to reduce the pollution and damage to the furnace body caused by the liquid. When the carrier plate collects too much liquid, the carrier plate containing the liquid is taken out of the cavity to facilitate the pouring of the liquid and the cleaning of the carrier plate.

[0028] Some embodiments of the present application will be described below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0029] See also Figure 1 , an embodiment of the present application provides a reaction device 100, which is used to process reactants.

[0030] The reaction device 100 includes a furnace body 11 and at least one receiving assembly 12 . The furnace body 11 is provided with a cavity 111 and a furnace opening 112 communicating with the cavity 111 . The cavity 111 is used to accommodate an object to be processed. The receiving assembly 12 is disposed in the cavity 111 .

[0031] In some embodiments, the reactant is a silicon wafer (not shown), and the exhaust gas is P 2 O 5 (Phosphorus pentoxide), corrosive liquids include but are not limited to metaphosphoric acid.

[0032] In some embodiments, see Figure 1 The cavity 111 has a first area 1111 and a second area 1112 along the extension direction of the furnace body 11. The first area 1111 is closer to the furnace port 112 than the second area 1112. The second area 1112 is used to accommodate silicon wafers. When the silicon wafers need to be processed, the silicon wafers are placed in the second area 1112 of the cavity 111, so that the second area 1112 is heated to a high temperature environment, and then an excessive amount of reaction gas is introduced into the heated second area 1112, so that the silicon wafers and the reaction gas react fully in the cavity 111.

[0033] The reaction device 100 provides a high temperature environment for the reaction of the processed object by heating the furnace body 11. In order to ensure the sealing of the furnace body 11, a sealing ring is provided on the furnace body 11, but the sealing ring is easily damaged in a high temperature environment. Figure 1The reaction device 100 also includes a heat insulation structure 14, which is located in the first area 1111 to insulate the second area 1112 and the furnace port 112, thereby reducing the risk of the sealing ring at the furnace port 112 being easily damaged in a high temperature environment, resulting in leakage of the sealing ring, and helping to improve the airtightness of the cavity 111, so as to achieve the purpose of the reaction device 100 to continuously and stably perform reaction processing on silicon wafers.

[0034] In some embodiments, see Figure 2 The receiving assembly 12 includes a carrier plate 121 having a top surface 1211. Before the reaction gas is introduced into the chamber 111 to react the silicon wafer, the carrier plate 121 is placed in the first area 1111 with the top surface 1211 facing upward relative to the gravity direction.

[0035] During the reaction of the silicon wafer, the waste gas generated by the excess reaction gas in the chamber 111 contains P 2 O 5 , part P 2 O 5 When the silicon wafer reaction processing is completed, the furnace port 112 needs to be opened to take the silicon wafer out of the chamber 111. Cold air will enter the first area 1111 from the furnace port 112, and the P attached to the insulation structure 14 2 O 5 When it is cooled, it reacts with water in the air to generate metaphosphoric acid and drips. The top surface 1211 is set upward so that the top surface 1211 can receive the metaphosphoric acid generated and dripping in the first area 1111, so as to reduce the problem of contamination and chemical corrosion of the furnace body 11 caused by the contact between the metaphosphoric acid and the side wall of the cavity 111, so as to facilitate the cleaning and maintenance of the furnace body 11, and help to increase the service life of the furnace body 11. When too much metaphosphoric acid is received on the carrier 121, the carrier 121 in the cavity 111 is taken out to pour the metaphosphoric acid and clean the carrier 121. After the carrier 121 is taken out in the first area 1111, a new carrier 121 is placed in the first area 1111 so that the carrier 121 can continue to receive the metaphosphoric acid, thereby improving the efficiency of the reaction device 100 in processing silicon wafers.

[0036] In some embodiments, see Figure 1 , the carrier plate 121 and the thermal insulation structure 14 are arranged along the gravity direction, and the carrier plate 121 is located below the thermal insulation structure 14. When the metaphosphoric acid on the thermal insulation structure 14 drips under the action of gravity, the carrier plate 121 is placed below the thermal insulation structure 14 so that the carrier plate 121 can accurately receive the metaphosphoric acid dripping from the thermal insulation structure 14, which helps to reduce the risk of metaphosphoric acid contamination and damage to the reaction device 100. Exemplarily, the thermal insulation structure 14 is a thermal insulation sheet or a thermal insulation board.

[0037] In some embodiments, see Figure 1 Along the direction of the furnace body 11 , the length of the carrier plate 121 is greater than the length of the insulation structure 14 , so that the carrier plate 121 can fully receive the metaphosphoric acid dripping from the insulation structure 14 , which helps to reduce the risk of metaphosphoric acid contamination and damage to the reaction device 100 .

[0038] In some embodiments, see Figure 2 , the receiving assembly 12 includes a protrusion 122, and the protrusion 122 is located on the top surface 1211. The protrusion 122 and the top surface 1211 enclose a receiving space 123. When the carrier 121 receives too much metaphosphoric acid, the metaphosphoric acid is contained in the receiving space 123, so that the metaphosphoric acid is not easy to overflow from the carrier 121, reducing the risk of the metaphosphoric acid easily spilling on the carrier 121 and contaminating the furnace body 11. The protrusion 122 blocks the metaphosphoric acid in the receiving space 123 to increase the liquid level of the metaphosphoric acid on the top surface 1211, meet the need for the carrier 121 to receive more metaphosphoric acid, and reduce the frequency of taking the full carrier 121 out of the cavity 111. Thus, the number of times the furnace port 112 is opened and closed is reduced, and the problem of the silicon wafer reaction rate being reduced due to the decrease in the concentration of the reaction gas and the decrease in the temperature in the second area 1112 caused by the opening of the furnace port 112 is reduced, which helps to improve the efficiency of the reaction device 100 in processing silicon wafers.

[0039] In some embodiments, see Figure 2 When the carrier 121 is in an arc-shaped sheet shape, along the axial direction of the carrier 121, the carrier 121 has a first end 1213 and a second end 1214 opposite to each other, and a protrusion 122 is provided on each of the first end 1213 and the second end 1214. Since the carrier 121 is in an arc-shaped sheet shape, the top surface 1211 is concave, and the protrusions 122 are provided on the first end 1213 and the second end 1214, respectively, so that a semi-enclosed receiving space 123 is formed on the top surface 1211, thereby achieving the purpose of the carrier 121 receiving metaphosphoric acid.

[0040] In some embodiments, see Figure 2 A protrusion 122 is provided on both sides of the carrier 121 in a direction perpendicular to the central axis of the furnace body 11, so that the protrusions 122 are first connected end to end on the arc-shaped sheet-like carrier 121 to form a ring. Since the arc-shaped sheet-like carrier 121 is easy to tilt, the ring-shaped protrusion 122 is provided on the edge of the top surface 1211 so that when the carrier 121 tilts, the protrusion 122 can block the metaphosphoric acid, thereby reducing the risk of metaphosphoric acid leaking when the carrier 121 tilts.

[0041] In other embodiments, see Figure 3When the carrier 121 is a flat sheet, the annular protrusion 122 is set on the top surface 1211, and the protrusion 122 and the top surface 1211 can also enclose a semi-enclosed receiving space 123, thereby achieving the purpose of the carrier 121 receiving more metaphosphoric acid.

[0042] In some embodiments, see Figure 2 The carrier plate 121 has a bottom surface 1212 opposite to the top surface 1211. When the furnace body 11 is arranged in a tubular shape, the curvature of the bottom surface 1212 is equal to the curvature of the furnace body 11. When the carrier plate 121 is placed in the furnace body 11, the axial direction of the carrier plate 121 coincides with the axial direction of the furnace body 11, so that the bottom surface 1212 can fit with the inner side wall of the furnace body 11, so that the furnace body 11 can fully support the carrier plate 121, which helps to improve the stability of the carrier plate 121 placed in the furnace body 11 and effectively reduces the risk of the carrier plate 121 being easily tilted. In addition, by fitting the bottom surface 1212 with the inner side wall of the furnace body 11, the gap between the carrier plate 121 and the furnace body 11 is effectively reduced, thereby reducing the space occupied by the carrier plate 121 in the cavity 111, so that the cavity 111 can accommodate more silicon wafers, which helps to improve the efficiency of the reaction device 100 in processing silicon wafers.

[0043] In some embodiments, see Figure 4 The reaction device 100 further includes a material taking component 13 movably arranged relative to the furnace body 11, and the material taking component 13 is used to take the carrier plate 121 out of the cavity. The material taking component 13 includes a material taking rod 131 and a material taking hook 132, and the material taking hook 132 is fixedly connected to one end of the material taking rod 131. When it is necessary to take the carrier 121 out of the cavity 111, the material picking hook 132 is driven to move by the material picking rod 131 so that the material picking hook 132 can enter the cavity 111, and the material picking rod 131 is operated to make the material picking hook 132 contact with the side of the carrier 121 away from the furnace mouth 112, and then the material picking rod 131 is operated to make the material picking hook 132 drive the carrier 121 to move out of the cavity 111, thereby achieving the purpose of taking out the carrier 121. Compared with manually holding the carrier 121, the use of the material picking component 13 can reduce the risk of burns to the human body in a high temperature environment or chemical corrosion to the human body by metaphosphoric acid, which helps to improve the safety of the reaction device 100.

[0044] In addition, those skilled in the art should recognize that the above embodiments are only used to illustrate the present application, and are not intended to limit the present application. As long as they are within the essential scope of the present application, appropriate changes and modifications to the above embodiments are within the scope disclosed in the present application.

Claims

1. A reaction device for performing reaction processing on a material to be processed, characterized in that: The reaction device comprises: A furnace body, provided with a cavity and a furnace opening communicated with the cavity, wherein the cavity has a first area and a second area along the extension direction of the furnace body, the first area is closer to the furnace opening of the furnace body than the second area, and the second area is used to accommodate the object to be processed; The receiving assembly comprises a carrier plate arranged in the first area, the carrier plate has a top surface facing the central axis direction of the furnace body, and the top surface is used to receive the liquid generated in the first area.

2. The reaction device according to claim 1, characterized in that: The receiving assembly further comprises a protrusion, and the protrusion is located on the top surface; The protrusion and the top surface enclose a receiving space, and the receiving space is used to contain the liquid.

3. The reaction device according to claim 2, characterized in that: The carrier plate is arranged in an arc-shaped sheet shape, and has a first end and a second end opposite to each other along the central axis direction of the furnace body, and the first end and the second end are both provided with the protrusion.

4. The reaction device according to claim 3, characterized in that: The protrusions are respectively arranged on both sides of the carrier plate along a direction perpendicular to the central axis of the furnace body, and all the protrusions on the top surface are connected end to end in sequence.

5. The reaction device according to claim 2, characterized in that: The furnace body is arranged in a tubular shape, the carrier plate has a bottom surface opposite to the top surface, and the curvature of the bottom surface is equal to the curvature of the inner diameter of the furnace body; When the carrier plate is located in the furnace body, the bottom surface of the carrier plate contacts the inner side wall of the furnace body.

6. The reaction device according to claim 2, characterized in that: The protrusion is arranged in a ring shape.

7. The reaction device according to claim 1, characterized in that: The reaction device also includes a material taking component, which includes a material taking rod and a material taking hook, and the material taking hook is fixedly connected to one end of the material taking rod; The material taking assembly is used for driving the carrier plate to move out of the cavity through the material taking hook under the action of external force.

8. The reaction device according to claim 1, characterized in that: A heat insulation structure is arranged in the first area, and the heat insulation structure is used to insulate the second area and the furnace opening.

9. The reaction device according to claim 8, characterized in that: The carrier plate and the heat insulation structure are arranged along the direction of gravity, and the carrier plate is located below the heat insulation structure.

10. The reaction device according to claim 9, characterized in that: Along the length direction of the furnace body, the length of the carrier plate is greater than the length of the heat insulation structure.

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