Cleaning head and cleaning device

Abstract

The utility model provides a cleaning head and a cleaning device.The cleaning head is applied to cleaning equipment and comprises a cleaning head body, a first nozzle, a second nozzle and a plurality of third nozzles, the first nozzle, the second nozzle and the third nozzles are arranged on the cleaning head body in a penetrating mode, the cross section of each third nozzle is rectangular, and the first nozzle and the second nozzle are arranged on the cleaning head body in a penetrating mode. The extension lines of the center lines, in the length direction, of the third nozzles are overlapped, and the distances between the center lines, in the length direction, of the third nozzles and the edge line of the second end of the cleaning head body are increased or decreased in sequence. According to the cleaning head and the cleaning device, the adverse effect of an air column sprayed out of the third nozzle on the surface of the wafer in the drying process is avoided, and defects and particles on the surface of the wafer after cleaning and drying processes are reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a cleaning head and a cleaning device used in wafer cleaning equipment. Background Art

[0002] With the development of advanced semiconductor manufacturing processes, the tolerance of semiconductor manufacturing processes to defects and particles is getting lower and lower. Wet cleaning is an important step in particle removal in the semiconductor manufacturing process. The number of defects and particles after cleaning has become an important indicator for the industry to evaluate the cleaning effect.

[0003] Wet cleaning is widely used in all aspects of the semiconductor manufacturing process. In the final stage of wet cleaning, the wafer surface needs to be dried. Common drying methods include nitrogen drying. With the development of advanced processes, the size of wafer surface patterns continues to shrink, and high aspect ratio patterns make the traditional water nitrogen drying method unable to meet the needs of advanced processes. Due to the rapid evaporation of isopropyl alcohol, the isopropyl alcohol (IPA) nitrogen (N2) drying method has gradually become the mainstream.

[0004] In the isopropyl alcohol nitrogen spin drying method, IPA is sprayed from the nozzle in the final stage of wet cleaning to displace the water on the wafer surface. After the replacement is completed, the N2 nozzle will start to spray nitrogen from the middle of the wafer and slowly move toward the edge of the wafer. The nitrogen sprayed onto the wafer surface gradually pushes the IPA liquid film on the wafer surface off the wafer surface to achieve wafer drying.

[0005] However, in the isopropyl alcohol nitrogen drying method, the liquid on the wafer surface is sputtered when the N2 nozzle contacts the liquid on the wafer surface during the nitrogen purge process, and the excessive N2 flow destroys the wafer surface pattern. Even the IPA sputtering at the edge of the wafer causes the cleaning chamber environment to deteriorate, which will also have an adverse effect on the subsequent wafer cleaning. The above problems make the existing cleaning process unable to meet the requirements of advanced processes. Utility Model Content

[0006] The purpose of the present application is to provide a cleaning head and a cleaning device to avoid the adverse effects of the gas column ejected from the third nozzle on the wafer surface during the drying process, and to reduce defects and particles on the wafer surface after the cleaning and drying processes.

[0007] In one aspect, an embodiment of the present application provides a cleaning head, which is applied to a cleaning device, comprising:

[0008] A cleaning head body and a first nozzle, a second nozzle and a third nozzle which are arranged through the cleaning head body, wherein the first nozzle, the second nozzle and the third nozzle are arranged sequentially from the first end to the second end of the cleaning head body, wherein there are multiple third nozzles, the cross-sectional shape of the third nozzles is rectangular, and the extension lines of the center lines of the multiple third nozzles along the length direction overlap, and the spacing between the center lines of the multiple third nozzles along the length direction and the edge lines of the second end of the cleaning head body increases or decreases sequentially.

[0009] In some embodiments of the present application, the cross-sectional shape of the first nozzle is circular, the cross-sectional shape of the second nozzle is circular, and along the direction from the first end to the second end of the cleaning head body, the distance between the center point of the first nozzle and the center point of the second nozzle is 11.8 mm to 12.2 mm.

[0010] In some embodiments of the present application, the closest distance between the center point of the second nozzle and the third nozzle is 11.5±0.5 mm.

[0011] In some embodiments of the present application, the number of the third nozzles is an odd number, and the center point of the third nozzle located in the middle is collinear with the center points of the first nozzle and the second nozzle.

[0012] In some embodiments of the present application, the cross-sectional lengths of the plurality of third nozzles are different but the widths are the same.

[0013] In some embodiments of the present application, the cross-sectional length of the plurality of third nozzles ranges from 2.5 mm to 4 mm, and the width is 1±0.2 mm.

[0014] In some embodiments of the present application, a minimum distance between two adjacent third nozzles among the plurality of third nozzles is 1 mm to 1.2 mm.

[0015] An embodiment of the present application also provides a cleaning device for cleaning wafers, comprising a robotic arm and any one of the above-mentioned cleaning heads, wherein the cleaning head is connected to the end of the robotic arm and moves back and forth on the wafer under the drive of the robotic arm.

[0016] In some embodiments of the present application, the first end of the cleaning head is connected to the end of the robot arm, and the cleaning head body is parallel to the wafer surface.

[0017] In some embodiments of the present application, the extension lines of the center lines of the multiple third nozzles along the length direction intersect with the extension lines of the edge lines of the second end of the cleaning head body to form an angle β, and the angle θ passed by the robot arm when moving from the center of the wafer to the edge of the wafer is half of the angle θ.

[0018] In the cleaning head and cleaning device provided in the embodiments of the present application, the cross-sectional shape of the third nozzle in the cleaning head is a rectangle, and is distributed along an inclined line relative to the edge line of the cleaning head body. The rectangular cross-sectional shape of the third nozzle can avoid the cutting effect of the gas column ejected from the third nozzle on the liquid surface of the wafer, and can also effectively reduce the liquid splashing generated when the third nozzle first contacts the wafer surface page, thereby reducing the surface particle residue; so that the N2 flow rate can also achieve a better drying effect when it is relatively small.

[0019] Furthermore, the extension lines of the center lines of the multiple third nozzles along the length direction overlap, and the spacing between the center lines of the multiple third nozzles along the length direction and the second end edge lines of the cleaning head body increases or decreases sequentially (that is, the multiple third nozzles are distributed with respect to the edge inclined lines of the cleaning head body), so that when the third nozzle moves to the edge, the third nozzle is tangent to the edge of the wafer, thereby reducing edge sputtering. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The following figures describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale.

[0021] in:

[0022] Figure 1 It is a schematic diagram of the structure of a cleaning device when cleaning the surface of a wafer;

[0023] Figure 2 It is a schematic diagram of the structure of the nozzle distribution on the surface of a cleaning head;

[0024] Figure 3 is a schematic diagram of a structure in which nitrogen gas is blown vertically from the third nozzle toward the surface of the wafer;

[0025] Figure 4 is a schematic structural diagram of a cylindrical N2 gas column ejected from any one of the third nozzles in contact with a liquid film on the surface of the wafer;

[0026] Figure 5 is a schematic diagram of the structure of the third nozzle and the edge of the wafer;

[0027] Figure 6 is a schematic diagram of the structure of the cleaning head shown in the embodiment of the present application;

[0028] Figure 7It is a schematic diagram of the structure of the third nozzle of the cleaning head and the edge of the wafer shown in the embodiment of the present application. DETAILED DESCRIPTION

[0029] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0030] like Figure 1 As shown, it is a schematic diagram of the structure of a cleaning device when cleaning the surface of a wafer. The cleaning device includes a robot arm 11 and a cleaning head 12. The cleaning head 12 is arranged at the end of the robot arm 11. Driven by the robot arm 11, the cleaning head 12 moves on the surface of the wafer 13. When cleaning, the wafer 13 keeps rotating at a high speed driven by the rotating shaft 14. At the same time, the robot arm 11 drives the cleaning head 12 to swing back and forth at a certain angle above the wafer. The multiple nozzles on the cleaning head 12 spray different cleaning solutions according to the program setting to clean the surface of the wafer 13. In the last step of cleaning, one or more nozzles of the cleaning head 12 spray nitrogen and move from the center of the wafer to the edge of the wafer to achieve wafer drying.

[0031] like Figure 2 The figure is a schematic diagram of the structure of the nozzle distribution on the surface of a cleaning head, wherein the cleaning head 12 includes a first nozzle 121 for spraying an aqueous solution, a second nozzle 122 for spraying a dry solution such as IPA, and a third nozzle 123 for spraying a gas such as nitrogen.

[0032] Among them, in the process of using nitrogen purge to dry the wafer, the extent of liquid sputtering when the third nozzle 123 contacts the liquid on the wafer surface and the damage to the wafer surface pattern by the N2 flow rate become important factors affecting the surface defects and particle content of the wafer. For example, when the N2 flow rate is large, the wafer will be dried better, but the high aspect ratio pattern on the wafer surface will be damaged (Collapse). When the N2 flow rate is small, the wafer cannot be dried well, and IPA residue will form on the wafer surface, affecting the subsequent process flow. Moreover, when the third nozzle 123 first contacts the wafer liquid surface, it will cause great interference to the liquid film on the wafer surface, and the particles on the wafer surface, especially those in the middle position, will increase.

[0033] In addition, the IPA sputtering at the edge of the wafer causes the cleaning chamber environment to deteriorate, which will also have an adverse effect on the subsequent wafer cleaning. For example, when the robot moves to the edge of the wafer, the cylindrical gas column ejected from the nozzle cannot be tangent to the edge of the wafer, resulting in edge IPA sputtering, causing the cleaning chamber environment to deteriorate.

[0034] like Figure 3 As shown, it is a structural schematic diagram of nitrogen blowing vertically from the third nozzle to the surface of the wafer, and the cleaning head 12 moves from the center of the wafer (the dotted part) to the edge of the wafer. Among them, the third nozzle is multiple, and the multiple third nozzles are horizontally distributed. When the cross-sectional shape of the third nozzle is circular, the third nozzle ejects a cylindrical N2 gas column to purge the liquid film on the surface of the wafer. Because a larger N2 flow rate is required to achieve a better drying effect, and a larger flow rate of N2 will cause irreversible damage to the wafer pattern; and the contact point between the third nozzle and the liquid interface on the wafer surface is not fixed, the cylindrical N2 gas column is easy to form sputtering at the liquid interface to damage the liquid film on the surface of the wafer, affecting the drying effect; further, the liquid sputtering at the edge of the wafer will affect the cavity environment and the stability of the subsequent production of wafers.

[0035] like Figure 4 As shown in FIG. 1 , when the cleaning head 12 moves to the edge of the wafer, the cylindrical N2 gas column ejected by any one of the third nozzles contacts the liquid film on the wafer surface. As can be seen from the figure, the cylindrical N2 gas column cannot be well tangent to the liquid film on the wafer surface, so liquid sputtering will occur, thereby damaging the liquid film on the wafer surface. Affecting the cleanliness of the wafer surface, such as Figure 5 As shown, it is a structural schematic diagram of the third nozzle and the edge of the wafer when the cleaning head 12 moves to the edge of the wafer. It can be seen from the figure that the horizontally distributed multiple third nozzles intersect with the edge of the wafer, which will cause liquid splashing at the edge of the wafer, thereby causing the cavity environment to deteriorate and affecting the equipment process stability.

[0036] In order to improve the above problems, the number of the third nozzles on the cleaning head can be increased to achieve rapid drying of the wafer. The surface defects and particles of the wafer after drying can also be controlled by changing the flow rate of the nitrogen gas sprayed from the third nozzle, the height of the third nozzle from the wafer surface, the movement speed of the robot arm, etc. However, the above solutions cannot meet the requirements of advanced processes for the cleaning chamber environment and the cleanliness of the wafer surface.

[0037] In response to the above-mentioned defects, an embodiment of the present application provides a cleaning head and a cleaning device including the cleaning head. The cleaning head can effectively improve the cleanliness of the inside of the cleaning chamber of the wet cleaning process and enhance the stability of the operation of the cleaning chamber by improving the shape and arrangement of the third nozzle for spraying dry gases such as nitrogen, and can also significantly improve the surface defects and the number of particles of the wafer after the cleaning process, thereby greatly improving the process capability of the wet cleaning process.

[0038] The technical solution of the present invention is described in detail below in conjunction with the embodiments and drawings.

[0039] Reference Figure 6 As shown, an embodiment of the present application provides a cleaning head 220, comprising: a cleaning head body 224 and a first nozzle 221, a second nozzle 222 and a third nozzle 223 which are arranged through the cleaning head body 224, wherein the third nozzle 223 is multiple, the cross-sectional shape of the third nozzle 223 is a rectangle, and the extension lines of the center lines of the multiple third nozzles 223 overlap, and the distances between the center points of the multiple third nozzles 223 and the second end edge line of the cleaning head body increase or decrease sequentially.

[0040] The cleaning head body 224 includes a first end 2241 and a second end 2242. The first end 2241 is used to connect to the robot arm. The shape of the cleaning head body 224 can be a regular shape, such as a circle, an ellipse or a square, a rectangle or a hexagon, etc., or an irregular shape. In some embodiments of the present application, the shape of the cleaning head body 224 is an irregular shape, such as Figure 6 As shown, the cross-sectional shape of the first end of the cleaning head body 224 is trapezoidal, extending from the first end 2241 to the second end 2242, and the edge of the second end 2242 is projected as a horizontal line.

[0041] In some embodiments of the present application, the first nozzle 221, the second nozzle 222 and the third nozzle 223 are all arranged throughout the cleaning head body 224, and the first nozzle 221, the second nozzle 222 and the third nozzle 223 are arranged sequentially from the first end 2241 to the second end 2242 of the cleaning head body 224.

[0042] In some embodiments of the present application, one end of the first nozzle 221 is connected to a deionized water pipe in the semiconductor device, so as to introduce deionized water into the first nozzle 221 for cleaning the surface of the wafer.

[0043] In some embodiments of the present application, one end of the second nozzle 222 is connected to an organic solvent pipeline in a semiconductor device, such as an isopropyl alcohol IPA pipeline. After the wafer surface is cleaned with deionized water, the organic solvent is sprayed onto the wafer surface through the second nozzle 222 to remove the deionized water on the wafer surface. Since isopropyl alcohol has good volatility, after isopropyl alcohol replaces the deionized water on the wafer surface, the isopropyl alcohol can be volatilized from the wafer surface through a drying step in a subsequent cleaning process. When the cleaning head is working, the first nozzle 221 and the second nozzle 222 can work simultaneously to spray deionized water and the organic solvent, respectively.

[0044] In some embodiments of the present application, the cross-sectional shape of the first nozzle 221 is circular, the cross-sectional shape of the second nozzle 222 is circular, the cross-sectional diameter of the first nozzle is 3±0.1 mm, and the cross-sectional diameter of the second nozzle is 1.5±0.1 mm.

[0045] In some other embodiments, the cross-sectional shape of the first nozzle 221 may also be an ellipse, and the cross-sectional shape of the second nozzle 222 may also be an ellipse or other shapes.

[0046] In some embodiments of the present application, along the direction from the first end 2241 of the cleaning head body 224 to the second end 2242, the distance between the center point of the first nozzle 221 and the center point of the second nozzle 222 is 11.8 mm to 12.2 mm. The distance between the center point of the first nozzle 221 and the center point of the second nozzle 222 is determined based on the liquid flow rate of the first nozzle 221 and the second nozzle 222 and the wafer rotation speed. When the first nozzle 221 and the second nozzle 222 work at the same time, on the one hand, in order to avoid the liquid splashing caused by the liquid column sprayed by the first nozzle 221 and the second nozzle 222 spraying onto the wafer, on the other hand, it is also necessary to ensure that when the second nozzle 222 is located at the center of the wafer, the liquid film sprayed by the first nozzle 221 can fully cover the wafer, and no dry area will be formed in the center of the wafer due to centrifugal force.

[0047] In some embodiments of the present application, one end of the third nozzle 223 is connected to a gas pipeline in the semiconductor device, such as a nitrogen or inert gas pipeline. After the wafer surface is cleaned with an organic solvent such as isopropanol, the nitrogen or inert gas is blown through the third nozzle 223 to the wafer surface, moving from the central area of ​​the wafer to the edge of the wafer, thereby pushing the organic solvent on the wafer surface out of the wafer surface to achieve wafer drying. During the process of blowing the wafer surface with nitrogen or inert gas, some isopropanol also evaporates from the wafer surface.

[0048] In some embodiments of the present application, there are multiple third nozzles 223, the cross-sectional shape of the third nozzles 223 is rectangular, and the extension lines of the center lines of the multiple third nozzles 223 overlap, such as Figure 6 As shown in , the center lines of the plurality of third nozzles 223 overlap to form a dotted line AA'. Further, the distances between the center points of the plurality of third nozzles 223 and the second end edge line of the cleaning head body increase or decrease sequentially. For example, the number of the third nozzles 223 is 2, 3 or 4. Figure 6 Taking the number of the third nozzles 223 as an example, the distances between the center points of the three third nozzles and the end surface of the second end 2242 of the cleaning head body 224 are d1, d2 and d3 respectively, wherein d1, d2 and d3 increase or decrease sequentially. In some embodiments of the present application, when the number of the third nozzles 223 is an odd number, the center point of the third nozzle 223 located in the middle is collinear with the center points of the first nozzle and the second nozzle.

[0049] The cross-sectional shape of the third nozzle is set to be a rectangle. When nitrogen or inert gas is purged from the third nozzle, the rectangular air hole of the third nozzle will blow out a rectangular air column, which forms an "air knife" and a rectangular air wall, thereby better reducing the sputtering when the third nozzle first contacts the liquid surface on the wafer surface. Figure 7 As shown, the rectangular air holes will be tangent to the liquid surface on the wafer surface, reducing the disturbance of the liquid film on the wafer surface, and a smaller nitrogen or inert gas flow rate can achieve a better liquid film advancement effect. In the embodiment of the present application, the reduction of sputtering on the wafer surface during the drying process and the better advancement of the liquid film on the wafer surface by the "air knife" can significantly reduce the number of defects and particles on the wafer surface.

[0050] The center lines of multiple third nozzles 223 overlap and the spacing between the center points of multiple third nozzles 223 and the second end edge line of the cleaning head body increases or decreases sequentially. This enables the air holes of the third nozzles to be tangent to the edge of the wafer when the third nozzles are moved to the edge of the wafer, so that the air wall sprayed by the third nozzle can better push the IPA liquid film on the wafer surface out of the wafer, reducing the occurrence of sputtering on the wafer edge during the drying process and better maintaining the stability of the machine chamber environment.

[0051] Furthermore, the center line AA' intersects with the extended line of the edge line of the cleaning head body 224 to form an angle β. Since the cleaning head moves back and forth along the surface of the wafer driven by the robotic arm, when the robotic arm moves from the center of the wafer to the edge of the wafer, the angle traversed by the robotic arm from the center of the wafer to the edge of the wafer is θ, and the angle β is half of the angle θ.

[0052] In some embodiments of the present application, when the cross-sectional shapes of the plurality of third nozzles 223 are all rectangular, the cross-sectional lengths of the third nozzles 223 are different and the widths are the same. The different cross-sectional lengths of the third nozzles 223 can control the flow rate of the nitrogen or inert gas ejected through the third nozzles 223.

[0053] In some embodiments of the present application, the cross-sectional length of the plurality of third nozzles ranges from 2.5 mm to 4 mm, and the width is 1±0.2 mm.

[0054] In some embodiments of the present application, a minimum distance d4 between two adjacent third nozzles among the plurality of third nozzles is 1 mm to 1.2 mm.

[0055] In some embodiments of the present application, the closest distance d5 between the center point of the second nozzle and the third nozzle is 11.5±0.5 mm. When the second nozzle and the third nozzle are sprayed simultaneously, the closest distance between the center point of the second nozzle and the third nozzle avoids the influence of the gas sprayed from the third nozzle on the organic solvent sprayed from the second nozzle, such as causing splashing of the liquid column and liquid film of the organic solvent sprayed from the second spray group.

[0056] An embodiment of the present application also provides a cleaning device for cleaning wafers, comprising a robotic arm and any one of the above-mentioned cleaning heads, wherein the cleaning head is connected to the end of the robotic arm and moves back and forth on the wafer under the drive of the robotic arm.

[0057] In some embodiments of the present application, the first end of the cleaning head is connected to the end of the robot arm, and the cleaning head body is parallel to the wafer surface.

[0058] In some embodiments of the present application, the extension lines of the center lines of the plurality of third nozzles along the length direction intersect with the extension lines of the edge lines of the second end of the cleaning head body to form an angle β, and the angle θ passed by the robot arm when it moves from the center of the wafer to the edge of the wafer is half of the angle θ.

[0059] In the cleaning head and cleaning device provided in the embodiment of the present application, the cross-sectional shape of the third nozzle in the cleaning head is rectangular, and is distributed along an inclined line relative to the edge line of the cleaning head body. The rectangular cross-sectional shape of the third nozzle can avoid the cutting effect of the gas column ejected from the third nozzle on the liquid surface of the wafer, and can also effectively reduce the liquid sputtering generated when the third nozzle first contacts the wafer surface page, reduce the surface particle residue; and achieve a better drying effect when the N2 flow rate is relatively small. The rectangular gas wall has better contact with the cut surface of the liquid film on the wafer surface, and can reduce the occurrence of sputtering when the nitrogen or inert gas gas wall contacts the liquid surface on the wafer surface during the movement of the third nozzle.

[0060] Furthermore, the extension lines of the center lines of the multiple third nozzles along the length direction overlap, and the spacing between the center lines of the multiple third nozzles along the length direction and the second end edge line of the cleaning head body increases or decreases sequentially (that is, the multiple third nozzles are distributed along an inclined line direction relative to the edge line of the cleaning head body). This allows the third nozzle to be tangent to the edge of the wafer when it moves to the edge, thereby reducing edge sputtering.

[0061] By using the cleaning device described in the embodiment of the present application, a relatively small nitrogen or inert gas flow rate can be used to better push the IPA liquid film from the center of the wafer to the edge, thereby reducing damage to the pattern on the wafer surface. Moreover, the particles on the wafer surface are significantly reduced after cleaning, and the environment of the cleaning chamber is greatly improved.

[0062] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects that may be produced may be any one or a combination of the above, or any other beneficial effects that may be obtained.

[0063] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0064] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0065] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0066] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0067] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0068] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0069] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.

Claims

1. A cleaning head, used for cleaning equipment, characterized in that: include: A cleaning head body and a first nozzle, a second nozzle and a third nozzle which are arranged through the cleaning head body, wherein the first nozzle, the second nozzle and the third nozzle are arranged sequentially from the first end to the second end of the cleaning head body, wherein there are multiple third nozzles, the cross-sectional shape of the third nozzles is rectangular, and the extension lines of the center lines of the multiple third nozzles along the length direction overlap, and the spacing between the center lines of the multiple third nozzles along the length direction and the edge lines of the second end of the cleaning head body increases or decreases sequentially.

2. The cleaning head according to claim 1, characterized in that: The cross-sectional shape of the first nozzle is circular, the cross-sectional shape of the second nozzle is circular, and along the direction from the first end to the second end of the cleaning head body, the distance between the center point of the first nozzle and the center point of the second nozzle is 11.8 mm to 12.2 mm.

3. The cleaning head according to claim 2, characterized in that: The closest distance between the center point of the second nozzle and the third nozzle is 11.5±0.5 mm.

4. The cleaning head according to claim 2, characterized in that: The number of the third nozzles is an odd number, and the center point of the third nozzle located in the middle is collinear with the center points of the first nozzle and the second nozzle.

5. The cleaning head according to claim 1, characterized in that: The cross-sectional lengths of the plurality of third nozzles are different, but the widths are the same.

6. The cleaning head according to claim 5, characterized in that: The cross-sectional length of the plurality of third nozzles ranges from 2.5 mm to 4 mm, and the width is 1±0.2 mm.

7. The cleaning head according to claim 1, characterized in that: The minimum distance between two adjacent third nozzles among the plurality of third nozzles is 1 mm to 1.2 mm.

8. A cleaning device for cleaning a wafer, characterized in that: It comprises a robotic arm and a cleaning head according to any one of claims 1 to 7, wherein the cleaning head is connected to the end of the robotic arm and moves back and forth on the wafer driven by the robotic arm.

9. The cleaning device according to claim 8, characterized in that: The first end of the cleaning head is connected to the end of the robot arm, and the cleaning head body is parallel to the wafer surface.

10. The cleaning device according to claim 8, characterized in that: The extension lines of the center lines of the multiple third nozzles along the length direction intersect with the extension lines of the second end edge lines of the cleaning head body to form an angle β. The angle θ that the robot arm moves from the center of the wafer to the edge of the wafer is half of the angle θ.

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