Perovskite solar cell and power utilization device

Abstract

The utility model discloses a perovskite solar cell and an electric device, and the perovskite solar cell comprises a conductive substrate, a first carrier transmission layer, a first passivation layer, a perovskite layer, a second passivation layer, and a second carrier transmission layer which are stacked in sequence. Each of the first passivation layer and the second passivation layer independently comprises one or more of a 2-phenylethylamine hydrochloride layer, a 4-trifluoromethyl-aniline hydrochloride layer, a 2-thiophene ethylamine hydrochloride layer, an ethylamine hydrochloride layer and an n-butylamine hydrochloride layer. According to the perovskite solar cell structure provided by the utility model, through arranging the passivation layers on the two sides of the perovskite layer and limiting the selection of the passivation layers, the quality of front and back interfaces of the perovskite absorption layer can be simultaneously improved, the interface defects are reduced, the non-radiative recombination is inhibited, and the transmission of carriers on the interface is improved; and the performance of the perovskite solar cell, such as open-circuit voltage, filling factor and cell efficiency, can be further improved.

Description

Technical Field

[0001] The utility model relates to the field of batteries, in particular to a perovskite solar cell and an electrical device. Background Art

[0002] Perovskite solar cells have gradually become a research hotspot in the photovoltaic field due to their advantages such as high photoelectric conversion efficiency, low preparation cost and easy bandgap adjustment. The laboratory efficiency of small-area single-junction cells has reached 26.1%. However, due to the non-uniformity of perovskite film formation, the efficiency of large-area perovskite solar cells is still lagging behind. Using vacuum thermal evaporation to deposit the perovskite absorber layer is one of the effective methods to improve the uniformity of large-area perovskite solar cells.

[0003] Although the traditional method for large-area perovskite solar cell structures is mostly to reduce the interface defects between the perovskite layer and the carrier transport layer through interface passivation to inhibit its non-radiative recombination, the passivation effect is limited, resulting in a mediocre improvement in the performance of perovskite solar cells such as open-circuit voltage, fill factor and cell efficiency. Utility Model Content

[0004] Based on this, it is necessary to provide a perovskite solar cell and an electrical device with good battery performance.

[0005] The specific technical solution of the utility model for solving the above-mentioned technical problems is as follows.

[0006] The utility model provides a perovskite solar cell, comprising a conductive substrate, a first carrier transport layer, a first passivation layer, a perovskite layer, a second passivation layer and a second carrier transport layer stacked in sequence, wherein the first passivation layer and the second passivation layer each independently comprise one or more layers of a 2-phenylethylamine hydrochloride layer, a 4-trifluoromethyl-aniline hydrochloride layer, a 2-thiopheneethylamine hydrochloride layer, an ethylamine hydrochloride layer and an n-butylamine hydrochloride layer.

[0007] In one embodiment, the thickness of the first passivation layer and the second passivation layer are independently 1 nm to 20 nm.

[0008] In one embodiment, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer.

[0009] In one embodiment, the thickness of the first passivation layer is 1 nm to 10 nm.

[0010] In one embodiment, the thickness of the second passivation layer is 1 nm to 18 nm.

[0011] In one embodiment, the perovskite layer is an organic-inorganic hybrid perovskite layer.

[0012] In one embodiment, the band gap of the perovskite layer is 1.6 eV ~1.7 eV.

[0013] In one of the embodiments, it further includes a buffer layer located on the surface of the second carrier transport layer away from the conductive substrate.

[0014] In one of the embodiments, it further includes an electrode layer located on the surface of the buffer layer away from the conductive substrate.

[0015] The utility model further provides an electrical device, wherein the power supply device thereof comprises the above-mentioned perovskite solar cell.

[0016] The perovskite solar cell structure provided by the utility model can simultaneously improve the quality of the front and rear interfaces of the perovskite absorption layer, reduce interface defects and inhibit non-radiative recombination, improve the transmission of carriers at the interface, and further improve the performance of the perovskite solar cell such as open circuit voltage, fill factor and cell efficiency by arranging passivation layers on both sides of the perovskite layer and limiting the passivation layer structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A cross-sectional view of a perovskite solar cell is provided for one embodiment of the utility model.

[0018] Description of reference numerals:

[0019] 10: Perovskite solar cell; 100: Conductive substrate; 110: First carrier transport layer; 120: First passivation layer; 130: Perovskite layer; 140: Second passivation layer; 150: Second carrier transport layer; 160: Buffer layer; 170: Electrode layer. DETAILED DESCRIPTION

[0020] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0021] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0022] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0023] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0024] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0025] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only implementation method.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0027] like Figure 1 As shown, the utility model provides a perovskite solar cell 10, comprising a conductive substrate 100, a first carrier transport layer 110, a first passivation layer 120, a perovskite layer 130, a second passivation layer 140 and a second carrier transport layer 150 stacked in sequence, wherein the first passivation layer 120 and the second passivation layer 140 each independently comprise a 2-phenylethylamine hydrochloride layer (PEACl layer), a 4-trifluoromethyl-aniline hydrochloride layer (CF 3 -PACl layer), 2-thiopheneethylamine hydrochloride layer (TEACl layer), ethylamine hydrochloride layer (EACl layer), and n-butylamine hydrochloride layer (BACl layer) One or more layers.

[0028] In a specific example, the thickness of the first passivation layer 120 and the second passivation layer 140 are independently 1 nm to 20 nm.

[0029] In a specific example, the first carrier transport layer 110 is a hole transport layer, and the second carrier transport layer 150 is an electron transport layer.

[0030] In a specific example, the thickness of the first passivation layer 120 is 1 nm to 10 nm.

[0031] In a specific example, the thickness of the second passivation layer 140 is 1 nm to 18 nm.

[0032] Further, the thickness of the first passivation layer 120 may be, but is not limited to, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm or 10 nm. Preferably, the thickness of the first passivation layer 120 is 2 nm to 8 nm.

[0033] Furthermore, the thickness of the second passivation layer 140 may be, but is not limited to, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm or 18 nm. Preferably, the thickness of the second passivation layer 140 is 5 nm to 15 nm.

[0034] In one specific example, the hole transport layer comprises nickel oxide (NiO x ) layer and one or both of the self-assembled monolayer.

[0035] Further, the self-assembled monolayer may include, but is not limited to, one or more of a [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz) layer, a [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz) layer, a [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz) layer, a [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid (4PADCB) layer, a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) layer, and a 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline (TAPC) layer.

[0036] Furthermore, the thickness of the hole transport layer is 5 nm to 45 nm. Specifically, the thickness of the hole transport layer may be, but is not less than, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm or 45 nm.

[0037] In one specific example, the electron transport layer includes one or both of a fullerene layer and a fullerene derivative layer.

[0038] Specifically, the fullerene layer includes one or two layers of a C60 layer and a C70 layer; the fullerene derivative layer may include, but is not limited to, a [6,6]-phenyl-C61-butyric acid isomethyl ester (PCBM) layer.

[0039] It can be understood that the thickness of the electron transport layer is 5 nm to 45 nm. Specifically, the thickness of the hole transport layer can be but is not less than 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm or 45 nm.

[0040] In a specific example, the perovskite layer 130 is an organic-inorganic hybrid perovskite layer.

[0041] In a specific example, the band gap of the perovskite layer 130 is 1.6 eV to 1.7 eV. Specifically, the perovskite layer 130 is an organic-inorganic hybrid perovskite layer having a cubic crystal structure.

[0042] Further, the band gap of the perovskite layer 130 may be, but is not limited to, 1.6 eV, 1.61 eV, 1.62 eV, 1.63 eV, 1.64 eV, 1.65 eV, 1.66 eV, 1.67 eV, 1.68 eV, 1.69 eV, or 1.7 eV.

[0043] Further, the thickness of the perovskite layer 130 is 100nm~900nm. Specifically, the thickness of the perovskite layer 130 can be but is not limited to 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm or 900nm.

[0044] In a specific example, a buffer layer 160 is further included and is located on the surface of the second carrier transport layer 150 and is away from the conductive substrate 100 .

[0045] Furthermore, the buffer layer 160 includes a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine, BCP) layer and a tin dioxide (SnO 2 ) layers.

[0046] Furthermore, the thickness of the buffer layer 160 is 1 nm to 15 nm. Specifically, the thickness of the buffer layer 160 can be but is not limited to 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm or 15 nm.

[0047] In a specific example, an electrode layer 170 is further included and is located on the surface of the buffer layer 160 and is away from the conductive substrate 100 .

[0048] It can be understood that the conductive substrate 100 is generally transparent, that is, the conductive substrate 100 is a transparent conductive oxide substrate. Further, the electrode layer 170 includes one or two layers of a metal layer and a transparent conductive oxide layer.

[0049] Furthermore, the thickness of the electrode layer 170 is 50nm~200nm, and the thickness of the electrode layer 170 can be but is not limited to 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm or 200nm.

[0050] Specifically, the metal layer may be, but is not limited to, a transparent conductive oxide in the conductive substrate 100 may include, but is not limited to, ITO, indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), and aluminum-doped zinc oxide (AZO).

[0051] The perovskite solar cell 10 structure provided by the utility model can simultaneously improve the quality of the front and rear interfaces of the perovskite absorption layer, reduce interface defects and inhibit non-radiative recombination, improve the transmission of carriers at the interface, and further improve the performance of the perovskite solar cell 10 such as open circuit voltage, fill factor and cell efficiency by providing a passivation layer on both sides of the perovskite layer 130 and limiting the structure of the passivation layer.

[0052] Furthermore, the method for preparing the above-mentioned perovskite solar cell 10 may include the following steps:

[0053] The first carrier transport layer 110 is prepared on the conductive substrate 100 by using a method which may be, but is not limited to, physical vapor deposition. Furthermore, the physical vapor deposition may be, but is not limited to, magnetron sputtering.

[0054] The first passivation layer 120 is formed on the first carrier transport layer 110 by, but not limited to, spin coating, slit coating or evaporation.

[0055] The pre-perovskite material layer is prepared on the first passivation layer 120 by means of, but not limited to, physical vapor deposition, specifically by evaporation, including a first evaporation source and a second evaporation source. Further, the first evaporation source and the second evaporation source each independently include one or more of formamidine iodide (FAI), formamidine bromide (FABr), formamidine chloride (FACl), methylamine iodide (MAI), methylamine bromide (MABr), and methylamine chloride (MACl), wherein the evaporation rate of the first evaporation source is 1 Å / s ~2 Å / s, and the evaporation rate of the second evaporation source is 0.1 Å / s ~1 Å / s. Further, one or more of spin coating, slit coating and evaporation are used on the pre-perovskite material layer to prepare the perovskite layer 130. Further, spin coating and / or slit coating are used, including organic materials and organic solvents. Specifically, the organic material includes one or more of formamidine iodide, formamidine bromide, formamidine chloride, methylamine iodide, methylamine bromide and methylamine chloride, and the organic solvent includes one or more of anhydrous ethanol and isopropyl alcohol.

[0056] The second passivation layer 140 may be formed on the perovskite layer 130 by, but not limited to, spin coating, slit coating or evaporation.

[0057] The second carrier transport layer 150 may be prepared on the second passivation layer 140 by, but not limited to, physical vapor deposition. Furthermore, the physical vapor deposition may be, but not limited to, evaporation.

[0058] The buffer layer 160 may be prepared on the second carrier transport layer 150 by, but not limited to, physical vapor deposition. Furthermore, the physical vapor deposition may be, but not limited to, evaporation.

[0059] The electrode layer 170 may be prepared on the buffer layer 160 by using, but not limited to, physical vapor deposition. Furthermore, the physical vapor deposition may be, but not limited to, thermal evaporation.

[0060] The utility model further provides an electrical device, wherein the power supply device thereof includes the above-mentioned perovskite solar cell 10.

[0061] It can be understood that the electrical device is specifically a device for converting electrical energy into other energy. Specifically, the electrical device can be, but is not limited to, a variety of devices such as lighting devices, intelligent interactive devices, and power devices.

[0062] The following provides a specific embodiment to further describe the perovskite solar cell 10. Unless otherwise specified, the raw materials involved in the following specific embodiments can all be commercially available.

[0063] Example 1

[0064] This embodiment provides a perovskite solar cell, including a hole transport layer, a first passivation layer, a perovskite layer, a second passivation layer, an electron transport layer, a buffer layer and an electrode layer stacked in sequence on a conductive substrate, and the specific preparation method is as follows:

[0065] (1) NiO with a thickness of 25 nm was deposited on a transparent conductive substrate by magnetron sputtering. x layer, using spin coating on NiO x The surface was deposited with a self-assembled monolayer of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), Me-4PACz was dissolved in ethanol at a concentration of 0.5 mg / mL, and the spin coating speed was 3000 rpm / s;

[0066] (2) Spin coating 4-trifluoromethyl-aniline hydrochloride (CF) on the surface of Me-4PACz 3 -PACl) as the first passivation layer, CF 3-PACl was dissolved in isopropanol at a concentration of 0.5 mg / mL, the spin coating speed was 3000 rpm / s, and the thickness of the first passivation layer was 5 nm;

[0067] (3) Co-evaporation of PbI on the surface of the first passivation layer by evaporation 2 and CsBr skeleton layer, PbI 2 The evaporation rate was 2 Å / s, the thickness was 180 nm, the evaporation rate of CsBr was 0.4 Å / s, the thickness was 36 nm; the organic layer was deposited on the surface of the skeleton layer by spin coating, the organic layer solution was FAI / FABr dissolved in isopropanol, the concentration was 0.7 mol / L, the spin coating speed was 3000 rpm / s, and a prefabricated perovskite layer was obtained; the prefabricated perovskite layer was annealed, the annealing environment humidity was 0%-50%, the annealing temperature was 120 ℃, and the annealing time was 10 min, and a component of Cs was obtained. 0.2 FA 0.8 Pb(I 0.8 Br 0.2 ) 3 The perovskite absorber has a band gap of about 1.68 eV and a thickness of 500 nm;

[0068] (4) Spin coating 4-trifluoromethyl-aniline hydrochloride (CF 3 -PACl) as the second passivation layer, CF 3 -PACl was dissolved in isopropanol at a concentration of 2 mg / mL, the spin coating speed was 3000 rpm / s, and the thickness of the second passivation layer was 10 nm;

[0069] (5) Depositing a 20 nm electron transport layer C60 on the surface of the second passivation layer by evaporation;

[0070] (6) Using evaporation method to deposit a 5 nm BCP buffer layer on the surface of the electron transport layer;

[0071] (7) Use thermal evaporation to prepare a Ag metal electrode layer with a thickness of 100 nm to complete the battery preparation.

[0072] Comparative Example 1

[0073] The difference between this comparative example and Example 1 is that the first passivation layer and the second passivation layer are not provided.

[0074] Comparative Example 2

[0075] The difference between this comparative example and Example 1 is that the first passivation layer is not provided.

[0076] Performance Tests and Test Results

[0077] The electrical performance of the batteries of the above embodiments and comparative examples was tested. The test results are shown in Table 1 below.

[0078] Table 1

[0079]

[0080] By passivating both perovskite layers with specific materials, the quality of the front and rear interfaces of the perovskite absorption layer can be improved simultaneously, interface defects can be reduced and non-radiative recombination can be suppressed, the transmission of carriers at the interface can be improved, and the performance of perovskite solar cells such as open circuit voltage, fill factor and cell efficiency can be further improved.

[0081] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0082] The above embodiments only express several implementation methods of the utility model, which is convenient for understanding the technical solution of the utility model in detail, but it cannot be understood as limiting the scope of protection of the utility model patent. It should be pointed out that for ordinary technicians in this field, several deformations and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. It should be understood that the technical solutions obtained by those skilled in the art through logical analysis, reasoning or limited experiments on the basis of the technical solution provided by the utility model are all within the protection scope of the claims attached to the utility model. Therefore, the protection scope of the utility model patent shall be based on the content of the attached claims, and the description and drawings can be used to explain the content of the claims.

Claims

1. A perovskite solar cell, characterized in that: The invention comprises a conductive substrate, a first carrier transport layer, a first passivation layer, a perovskite layer, a second passivation layer and a second carrier transport layer which are stacked in sequence, wherein the first passivation layer and the second passivation layer each independently comprise one or more layers of a 2-phenylethylamine hydrochloride layer, a 4-trifluoromethyl-aniline hydrochloride layer, a 2-thiopheneethylamine hydrochloride layer, an ethylamine hydrochloride layer and an n-butylamine hydrochloride layer.

2. The perovskite solar cell according to claim 1, characterized in that The thickness of the first passivation layer and the second passivation layer are independently 1 nm to 20 nm.

3. The perovskite solar cell according to claim 2, characterized in that: The first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer.

4. The perovskite solar cell according to claim 3, characterized in that: The thickness of the first passivation layer is 1 nm to 10 nm.

5. The perovskite solar cell according to claim 3, characterized in that: The thickness of the second passivation layer is 1 nm to 18 nm.

6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that: The perovskite layer is an organic-inorganic hybrid perovskite layer.

7. The perovskite solar cell according to claim 6, characterized in that: The band gap of the perovskite layer is 1.6 eV to 1.7 eV.

8. The perovskite solar cell according to any one of claims 1 to 5 and 7, characterized in that: It also includes a buffer layer located on the surface of the second carrier transport layer and away from the conductive substrate.

9. The perovskite solar cell according to claim 8, characterized in that: The invention also includes an electrode layer located on the surface of the buffer layer and away from the conductive substrate.

10. An electrical device, characterized in that: The power supply device comprises the perovskite solar cell according to any one of claims 1 to 9.

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