Extreme ultraviolet radiation source device

Abstract

The embodiment of the utility model relates to an extreme ultraviolet radiation source device. An extreme ultraviolet radiation source device comprises: an extreme ultraviolet source container; the tin layer is arranged in the extreme ultraviolet source container; a chamber disposed adjacent to the extreme ultraviolet source container; and a first filter disposed in the chamber, where the first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are integrally formed.

Description

Technical Field

[0001] The embodiments of the utility model relate to an extreme ultraviolet (hereinafter referred to as EUV) radiation source device and an EUV lithography system. Background Art

[0002] Extreme ultraviolet (EUV) radiation, for example, electromagnetic radiation having a wavelength of about 50 nm or less, and including light having a wavelength of about 13.5 nm, can be used in photolithography processes to create extremely small features on substrates such as silicon wafers. Methods of generating EUV radiation include converting a fuel material from a liquid state to a plasma state. In the plasma state, the fuel material emits photons having a desired wavelength including EUV radiation. Utility Model Content

[0003] An embodiment of the utility model relates to an extreme ultraviolet (EUV) radiation source device, which includes: an EUV source container; a tin layer, which is arranged in the EUV source container; a chamber, which is arranged adjacent to the EUV source container; and a first filter, which is arranged in the chamber, wherein the first filter includes a membrane and a net arranged on the membrane, and the membrane and the net are formed integrally.

[0004] An embodiment of the present invention relates to an extreme ultraviolet (EUV) radiation source device, comprising: a chamber; an EUV source, which is configured to supply EUV radiation into the chamber through an outlet port; an EUV light path, which travels from the outlet port along the chamber; and a first filter, which is positioned in the EUV light path and is configured to allow the EUV radiation to pass through, wherein the first filter includes a first film and a first mesh formed integrally with the first film.

[0005] An embodiment of the present invention relates to a method for generating extreme ultraviolet (EUV) radiation, comprising: forming a first filter comprising a membrane and a mesh formed integrally with the membrane; disposing the first filter in a chamber adjacent to an EUV source container; and collecting fuel debris on the first filter in the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of various components may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 is a schematic diagram of an EUV radiation source apparatus according to some embodiments of the present disclosure.

[0008] Figure 2is a schematic diagram of an EUV source container of an EUV radiation source apparatus according to aspects of the present disclosure in some embodiments.

[0009] Figure 3 is a schematic diagram of a first filter of an EUV radiation source apparatus according to aspects of the present disclosure in some embodiments.

[0010] Figure 4 and 5 It is along Figure 3 A cross-sectional view of the first filter along line AA'.

[0011] Figure 6 is a schematic diagram of a carrier of an EUV radiation source device and a plurality of first filters according to some embodiments of the present disclosure.

[0012] Figure 7 is a schematic diagram of a second filter of an EUV radiation source apparatus according to aspects of the present disclosure in some embodiments.

[0013] Figure 8 and 9 It is along Figure 7 A cross-sectional view of the second filter taken along line BB' in FIG.

[0014] Fig.10 is a flow chart of a method of generating EUV radiation according to some embodiments of the present disclosure.

[0015] Fig.11 is a flow chart of a method of generating EUV radiation according to some embodiments of the present disclosure.

[0016] Figure 12 to Figure 14 is a schematic diagram of one or more operations in a method of generating EUV radiation, according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0017] The following disclosure provides many different embodiments or examples for implementing the different features of the subject matter provided. The following describes specific examples of elements and arrangements to simplify the present disclosure. Of course, these are only examples and do not wish to limit. For example, the first component in the following description is formed above or on the second component and may include an embodiment in which the first and second components are formed to be directly in contact, and may also include an embodiment in which an additional component may be formed between the first and second components so that the first and second components may not be directly in contact. In addition, the present disclosure may repeat element symbols and / or letters in various examples. This repetition is for the purpose of simplification and clarity, and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0018] Additionally, for ease of description, spatially relative terms, such as "below," "beneath," "below," "above," "above," "on," "over," and the like, may be used herein to describe the relationship of one element or component to another element or components, as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein likewise interpreted accordingly.

[0019] As used herein, although terms such as "first," "second," and "third" describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms may only be used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Terms such as "first," "second," and "third" do not imply a sequence or order when used herein unless the context clearly indicates.

[0020] Although the numerical ranges and parameters describing the wide range of the present disclosure are approximate values, the numerical values ​​described in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors that must be caused by the normal deviations found in the corresponding test measurements. Again, as used herein, the terms "substantially", "approximately" and "approximately" generally mean within a value or range that can be expected by a person of ordinary skill in the art. Alternatively, when considered by a person of ordinary skill in the art, the terms "substantially", "approximately" and "approximately" mean within an acceptable standard error of the mean. A person of ordinary skill in the art will understand that the acceptable standard error may vary according to different technologies.

[0021] Except in the operating / working examples, or unless otherwise explicitly specified, all numerical ranges, amounts, values ​​and percentages (e.g., for the amount of materials, durations, temperatures, operating conditions, ratios of amounts and the like disclosed herein) should be understood to be modified in all instances by the terms "substantially", "approximately" or "about". Therefore, unless otherwise indicated, the numerical parameters set forth in the present disclosure and the appended claims are approximate values ​​that may be changed as needed. At a minimum, each numerical parameter should be interpreted at least in view of the number of reported significant figures and by applying ordinary rounding techniques. Ranges may be expressed herein as from an endpoint to another endpoint or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints.

[0022] In the present disclosure, an extreme ultraviolet (EUV) radiation source device and a method for generating EUV radiation are provided. In some embodiments, the EUV radiation source device includes: an EUV source container; a tin layer disposed in the EUV source container; a chamber disposed adjacent to the EUV source container; and a first filter disposed in the chamber. The first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are formed integrally. The first filter mitigates fuel debris, provides spectral purity filtering, or both. Therefore, the EUV radiation source device is protected from debris, and the stability and service life of the EUV radiation source device are improved.

[0023] According to some embodiments of the present disclosure, a method of generating EUV radiation includes: forming a first filter including a membrane and a mesh integrally formed with the membrane; placing the first filter in a chamber adjacent to an EUV source container; and collecting fuel debris on the first filter in the chamber. Other components and processes may also be included.

[0024] In some embodiments, a method of generating EUV radiation generally includes providing a laser beam directed toward a tin layer disposed in an EUV source container. When the laser beam irradiates the tin layer, the tin layer is heated to a critical temperature and fuel debris is formed in the EUV source container. Collision of the laser beam with the tin layer causes atoms of the tin layer to shed their electrons and form a plasma of ionized fuel. The plasma of ionized fuel emits photons including EUV radiation having a wavelength of less than 50 nm, and the EUV radiation can be directed through an exit port of the EUV source container.

[0025] In some embodiments, fuel debris from the collision may splash around in the EUV source container and even escape the EUV source container and into the chamber. Cleaning of the chamber requires a time-consuming process of stopping the generation of EUV radiation. In some embodiments, a first filter disposed in the chamber is configured to collect the fuel debris and transmit EUV radiation toward a mirror in the chamber and onto the semiconductor workpiece.

[0026] Figure 1 is a schematic diagram of an EUV radiation source device 100 according to some embodiments of the present disclosure. Figure 1 The EUV radiation source device 100 includes an EUV source container 101, a chamber 102, and a first filter 131. In some embodiments, the EUV source container 101 is disposed adjacent to the chamber 102 and can be communicated with the chamber 102.

[0027] Figure 2 is a schematic diagram of an EUV source container of an EUV radiation source device according to aspects of the present disclosure in some embodiments. Figure 1 and2 The EUV radiation source device 100 includes a crucible 110 disposed in an EUV source container 101, and a tin layer 112 disposed on the crucible 110. In some embodiments, the EUV radiation source device 100 further includes a catcher 120 disposed in the EUV source container 101 and configured to collect fuel debris 203 generated from the collision of the laser beam 201 and the tin layer 112.

[0028] In some embodiments, the EUV source container 101 is configured to receive the crucible 110, the tin layer 112, the catcher 120, and the fuel debris 203. The EUV source container 101 is configured to direct the generated EUV radiation 202 out of the EUV source container 101 toward the first mirror 141, but the present disclosure is not limited thereto. In some embodiments, the EUV source container 101 is maintained in a vacuum state (e.g., at less than 10 -2 In some embodiments, the EUV source container 101 is a high vacuum chamber. The size, material, and configuration of the EUV source container 101 are not particularly limited and may be adjusted according to actual needs. In some embodiments, the configuration of the EUV source container 101 may be adjusted to increase the efficiency of generating EUV radiation 202. In some embodiments, the EUV source container 101 has a circular or elliptical shape from a top view.

[0029] In some embodiments, the crucible 110 disposed in the EUV source container 101 is rotatable. In some embodiments, the crucible 110 can rotate in a clockwise or counterclockwise direction. In some embodiments, the crucible 110 rotates at predetermined intervals. In some embodiments, the tin layer 112 is disposed on the crucible 110 and can rotate together with the crucible 110.

[0030] In some embodiments, the tin layer 112 is attached to the crucible 110. In some embodiments, the tin layer 112 is disposed on the inner sidewall 110a of the crucible 110. In some embodiments, the tin layer 112 is annular.

[0031] In some embodiments, the catcher 120 is configured to collect fuel debris 203 generated from the collision of the laser beam 201 with the tin layer 112. In some embodiments, because the catcher 120 captures some of the fuel debris 203, the functionality of the EUV radiation source apparatus 100 may be improved.

[0032] In some embodiments, the catcher 120 is disposed above the tin layer 112 and the crucible 110. In some embodiments, the tin layer 112 is disposed between the catcher 120 and the crucible 110. In some embodiments, the position L where the fuel debris 203 is generated is positioned between the tin layer 112 and the catcher 120. In some embodiments, the catcher 120 captures some of the fuel debris 203 generated at the position L. In some embodiments, the catcher 120 is spaced apart from the tin layer 112. In some embodiments, the fuel debris 203 collected by the catcher 120 may flow to the crucible 110. In some embodiments, from a top view, the catcher 120 is disposed above at least a portion of the tin layer 112. The shape of the catcher 120 may be adjusted according to practical factors (e.g., various configurations of the tin layer 112 and the crucible 110).

[0033] In some embodiments, the capturer 120 includes a first aperture 121 configured as an inlet port for the laser beam 201 to allow the laser beam 201 to be directed toward the tin layer 112. In some embodiments, the capturer 120 includes a second aperture 122 configured as an outlet port for the EUV radiation 202. However, some fuel debris 203 may enter the second aperture 122 of the capturer 120. In some embodiments, the second aperture 122 is disposed adjacent to the first aperture 121. In some embodiments, the first aperture 121 and the second aperture 122 are separated from each other. In some embodiments, the capturer 120 includes only the second aperture 122. In some embodiments, the capturer 120 includes the first aperture 121 and the second aperture 122.

[0034] In some embodiments, the EUV source container 101 further includes a first channel 105 configured to introduce the laser beam 201 into the EUV source container 101, and a second channel 106 configured to allow EUV radiation 202 to exit the EUV source container 101 and enter the chamber 102. In some embodiments, the first channel 105 and the second channel 106 are respectively coupled to the EUV source container 101 and communicate with the EUV source container 101. In some embodiments, the first channel 105 is disposed adjacent to the first aperture 121 of the capture device 120 and is configured as an inlet port for the laser beam 201 to enter the EUV source container 101. In some embodiments, the second channel 106 is disposed adjacent to the second aperture 122 of the capture device 120 and is configured as an outlet port for the EUV radiation 202 to exit the EUV source container 101.

[0035] In some embodiments, the first channel 105 is aimed toward the first aperture 121. In some embodiments, the second channel 106 is aimed toward the second aperture 124. In some embodiments, each of the first channel 105 and the second channel 106 is a cylinder. In some embodiments, each of the first channel 105 and the second channel 106 includes a conical shape, and the tip of the conical shape is coupled to the EUV source container 101.

[0036] Figure 3 is a schematic diagram of a first filter of an EUV radiation source device according to aspects of the present disclosure in some embodiments. Figure 1 and 3 , the first filter 131 is disposed within the chamber 102. In some embodiments, the EUV light path 108 traveling from the exit port along the chamber 102 is disposed within the chamber 102, and the first filter 131 is disposed in the EUV light path 108 and is configured to allow EUV radiation 202 to pass through. In some embodiments, the first filter 131 is disposed between the tin layer 112 and the first mirror 141 and is configured to collect fuel debris 203 generated from the collision of the laser beam 201 with the tin layer 112. In some embodiments, the first filter 131 is a debris filter and is disposed between the second channel 106 of the EUV source container 101 and the first mirror 141. In some embodiments, the first filter 131 includes a first film 131a and a first mesh 131b disposed on the first film 131a and configured to provide additional protection from damage caused by the fuel debris 203. In some embodiments, the first film 131a faces the exit port of the EUV source container 101 and is configured to capture the fuel debris 203. In some embodiments, the first net 131b faces the outlet port of the EUV source container 101 and is configured to capture the fuel debris 203. As shown, the first filter 131 may be circular, or may include other shapes such as square, oval, octagon, pentagon or other shapes, and may be adjusted according to actual needs.

[0037] Typically, the material used for the manufacture of the first filter 131 is preferably able to withstand high thermal loads. The first film 131a preferably includes a material that is substantially transparent to light of a first wavelength. The light of the first wavelength preferably includes EUV light, for example, light or radiation having a wavelength of approximately 10 to 15 nm. In some embodiments, the light of the first wavelength is approximately 13.5 nm. In some embodiments, the first filter 131 includes a material that is at least 80% transparent to light of the first wavelength, and more preferably, the first filter 131 includes a material that is approximately 95% to 100% transparent to light of the first wavelength. In some embodiments, the first filter 131 is adapted to provide spectral purity filtering of light of wavelengths other than the first wavelength. In some embodiments, the first filter 131 provides the additional advantage of significantly reducing radiation outside the EUV wavelength. Thus, the first filter 131 can be easily adjusted to function as an EUV spectral purity filter, such as an out-of-band radiation filter.

[0038] The material of the first film 131a may be opaque to visible light. In some embodiments, the material of the first film 131a preferably has high transparency to EUV radiation 202. In some embodiments, the material of the first film 131a comprises silicon. In some embodiments, the first film 131a is substantially transparent to light of the first wavelength. The first film 131a is relatively thin, but strong.

[0039] In some embodiments, the first mesh 131b comprises a structurally strong material to provide mechanical support for the first film 131a. In some embodiments, the first mesh 131b comprises a rigid material patterned into a grid of pillars that provide a stabilizing framework for the first film 131a. In some embodiments, the first mesh 131b comprises a material that is transparent to EUV radiation 202. In some embodiments, the first mesh 131b comprises an array of pillars, such as Figure 3 In some embodiments, the pattern of the pillars may include a square grid, and alternatively may include other patterns, such as triangles, rectangles, circles, octagons, trapezoids, honeycombs, or combinations thereof. In some embodiments, the first mesh 131b comprises a hexagonal wire mesh. In some embodiments, the cell width Cw1 of the first mesh 131b is between 15 and 20 nm. In some embodiments, the pillar width Sw1 of the first mesh 131b is less than 2 nm.

[0040] In some embodiments, the first film 131a and the first mesh 131b are integrally formed and include the same material. In some embodiments, the first film 131a and the first mesh 131b are simultaneously formed by etching a wafer.

[0041] Figure 4 It is along Figure 3 In some embodiments, reference is made to Figure 4 , the first net 131b is formed on the first film 131a to increase the mechanical strength of the first filter 131. In some embodiments, from a cross-sectional view, the profile of the pillars of the first net 131b is trapezoidal. In some embodiments, from a cross-sectional view, the trapezoidal profile of the pillars of the first net 131b includes a long substrate attached to the first film 131a and a short substrate away from the first film 131a. In some embodiments, the length L1 of the short substrate is less than 0.5nm, the length L2 of the long substrate is greater than the length L1 of the short substrate, and the difference between the length L2 of the long substrate and the length L1 of the short substrate is less than 1nm. In some embodiments, the thickness T1 of the first net 131b is less than 1nm.

[0042] Figure 5 It is along Figure 3 In some embodiments, reference is made to Figure 5 , the first net 131b is formed on the first side 131c of the first film 131a, and the second net 131d is formed on the second side 131e of the first film 131a opposite to the first side 131c to increase the mechanical strength of the first filter 131. In some embodiments, the profile of the pillars of the second net 131d is trapezoidal from a cross-sectional view. In some embodiments, the thickness T2 of the second net 131d is less than 1nm. In some embodiments, the profile of the pillars of the second net 131d may be similar to or different from the profile of the pillars of the first net 131b.

[0043] Figure 6 1 is a schematic diagram of a carrier 139 and a plurality of first filters 131 of an EUV radiation source device 100 according to some embodiments of the present disclosure. Figure 1 and 6 , the EUV radiation source device 100 includes a carrier 139 configured to carry a first filter 131. In some embodiments, the carrier 139 disposed in the chamber 102 is rotatable. In some embodiments, the carrier 139 can rotate around the first center C1 and in the first direction R1. In some embodiments, the carrier 139 can rotate in a clockwise or counterclockwise direction. In some embodiments, the carrier 139 rotates at predetermined intervals. In some embodiments, the first carrier 131 is disposed on the carrier 139 and can rotate around the first center C1 and in the first direction R1 together with the carrier 139.

[0044] In some embodiments, a plurality of first filters 131 are disposed on and attached to a carrier 139. In some embodiments, a plurality of first filters 131 surround a first center C1. In some embodiments, a first filter 131 disposed on a carrier 139 is rotatable. In some embodiments, each of the first filters 131 can rotate around a second center C2 and in a second direction R2. In some embodiments, each of the first filters 131 can rotate in a clockwise or counterclockwise direction. The first filters 131 can rotate in the same or different directions. In some embodiments, each of the first filters 131 rotates at predetermined intervals. In some embodiments, each of the first filters 131 disposed on a carrier 139 can rotate around a second center C2 and in a second direction R2, respectively. In some embodiments, at least one of the carrier 139 and the first filter 131 disposed on the carrier 139 can rotate separately or simultaneously.

[0045] In some embodiments, one of the first filters 131 disposed on the carrier 139 is disposed in the EUV light path 108. When a portion of the first filter 131 has collected some fuel debris 203 and is considered to be used and contaminated, the first filter 131 is rotated at predetermined intervals or rotated around the second center C2, and the fuel debris 203 may be collected by a new portion of the first filter 131. In some embodiments, when the first filter 131 in the EUV light path 108 has collected enough fuel debris 203 and is considered to be used and contaminated, the carrier 139 is rotated at predetermined intervals to dispose a new and unused another first filter 131 in the EUV light path 108. Thus, after all the first filters 131 have captured enough fuel debris 203, the plurality of first filters 131 on the carrier 139 may be immediately removed from the chamber 102, and another carrier 139 on which a plurality of unused first filters 131 are disposed may be moved into the chamber 102. As shown, the carrier 139 may be circular, or may include other shapes, such as square, oval, octagon, pentagon, or other shapes, and may be adjusted according to actual needs.

[0046] Figure 7 is a schematic diagram of the second filter 132 of the EUV radiation source apparatus 100 according to aspects of the present disclosure in some embodiments. Figure 1 and 7, the second mirror 142 is disposed in the chamber 102 and adjacent to the first mirror 141. In some embodiments, the second filter 132 is disposed between the first mirror 141 and the second mirror 142. The second filter 132 is configured at any position in the EUV light path 108. In some embodiments, the second filter 132 is disposed in the EUV light path 108 and is configured to allow EUV radiation 202 to pass through. In some embodiments, the second filter 132 is an out-of-band radiation filter. In some embodiments, the second filter 132 is disposed at an aperture position.

[0047] In some embodiments, the second filter 132 includes a second film 132a and a third mesh 132b disposed on the second film 132a and configured to provide mechanical support. In some embodiments, the second film 132b faces away from the radiation direction of the EUV radiation 202. In some embodiments, the third mesh 132b faces away from the radiation direction of the EUV radiation 202. As shown, the second filter 132 may be circular, or may include other shapes, such as square, oval, octagon, pentagon or other shapes, and may be adjusted according to actual needs.

[0048] Typically, the material used for the manufacture of the second filter 132 is preferably able to withstand high thermal loads. The second film 132a preferably includes a material that is substantially transparent to light of a first wavelength. The light of the first wavelength preferably includes EUV light, for example, light or radiation having a wavelength of about 10 to 15 nm. In some embodiments, the light of the first wavelength is about 13.5 nm. In some embodiments, the second filter 132 includes a material that is at least 80% transparent to light of the first wavelength, and more preferably, the second filter 132 includes a material that is approximately 95% to 100% transparent to light of the first wavelength. In some embodiments, the second filter 132 is adapted to provide spectral purity filtering of light of wavelengths other than the first wavelength. Thus, the second filter 132 can be easily adjusted to function as an EUV spectral purity filter, such as an out-of-band radiation filter. In some embodiments, the second filter 132 provides the additional advantage of collecting fuel debris 203 generated from the collision of the laser beam 201 with the tin layer 112 and thus functions as a debris filter.

[0049] The material of the second film 132a may be opaque to visible light. In some embodiments, the material preferably has high transparency to EUV radiation 202. In some embodiments, the material comprises silicon, EUV thin film, or zirconium. In some embodiments, the second film 132a is substantially transparent to light of the first wavelength. The second film 132a is relatively thin, but strong.

[0050] In some embodiments, the third mesh 132b comprises a structurally strong material to provide mechanical support for the second film 132a. In some embodiments, the third mesh 132b comprises a rigid material patterned into a grid of pillars to provide a stabilizing framework for the second film 132a. In some embodiments, the third mesh 132b comprises a material transparent to EUV radiation 202. In some embodiments, the third mesh 132b comprises an array of pillars. In some embodiments, the pattern of pillars may include a square grid, and may include other patterns, such as triangles, rectangles, circles, octagons, trapezoids, honeycombs, or combinations thereof. In some embodiments, the third mesh 132b comprises a hexagonal wire mesh. In some embodiments, the cell width Cw2 of the third mesh 132b is between 15 and 20 nm. In some embodiments, the pillar width Sw2 of the third mesh 132b is less than 2 nm.

[0051] In some embodiments, the second film 132a and the third net 132b are integrally formed and include the same material. In some embodiments, the second filter 132 includes silicon, EUV thin film, or zirconium. In some embodiments, the second film 132a and the third net 132b are formed simultaneously.

[0052] Figure 8 It is along Figure 7 In some embodiments, reference is made to Figure 8 , the third net 132b is formed on the second film 132a to increase the mechanical strength of the second filter 132. In some embodiments, from the cross-sectional view, the profile of the pillars of the third net 132b is trapezoidal. In some embodiments, from the cross-sectional view, the trapezoidal profile of the pillars of the third net 132b includes a long substrate attached to the second film 132a and a short substrate away from the second film 132a. In some embodiments, the length L3 of the short substrate is less than 0.5nm, the length L4 of the long substrate is greater than the length L3 of the short substrate, and the difference between the length L4 of the long substrate and the length L3 of the short substrate is less than 1nm. In some embodiments, the thickness T3 of the third net 132b is less than 1nm.

[0053] Fig. 9 It is along Figure 7 In some embodiments, reference Fig. 9, the third net 132b is formed on the first side 132c of the second film 132a, and the fourth net 132d is formed on the second side 132e of the second film 132a opposite to the first side 132c to increase the mechanical strength of the second filter 132. In some embodiments, from the cross-sectional view, the profile of the pillars of the fourth net 132d is trapezoidal. In some embodiments, the thickness T4 of the fourth net 132d is less than 1nm. In some embodiments, the profile of the pillars of the fourth net 132d may be similar to or different from the profile of the pillars of the third net 132b. In some embodiments, the second filter 132 is disposed on a rotatable carrier (not shown) and can rotate together with the rotatable carrier.

[0054] In some embodiments, referring back to Figure 1 , EUV radiation 202 in chamber 102 is directed to semiconductor workpiece 151 (e.g., a retraction mask) via one or more optical elements (e.g., first mirror 141 and second mirror 142). In some embodiments, EUV radiation 202 that passes through first filter 131 and / or second filter 132 is directed to semiconductor workpiece 151, and a usable image with high resolution over a commensurate area of ​​semiconductor workpiece 151 is achieved. In some embodiments, an image of the surface of semiconductor workpiece 151 is detected by detector 161.

[0055] In some embodiments, a plurality of first filters 131 are disposed at locations in the EUV light path 108. In some embodiments, a plurality of second filters 132 are disposed at locations in the EUV light path 108. In some embodiments, the first filter 131 is omitted, and the second filter 132 is disposed in the chamber 102. In some embodiments, the second filter 132 is omitted, and the first filter 131 is disposed in the chamber 102. In some embodiments, one first filter 131 and a plurality of second filters 132 are disposed at locations in the EUV light path 108.

[0056] According to some embodiments of the present disclosure, a method of generating EUV radiation is disclosed. In some embodiments, the method 200 utilizes the EUV radiation source apparatus 100. The method 200 includes several operations, and the description and illustration should not be considered as limiting the sequence of operations. Fig.10 2 is a flow chart of a method 200 according to some embodiments. The method 200 includes several operations (201 to 203). Fig.10 Additional steps are provided before, during, and after the steps shown in , and some of the steps described below may be replaced or eliminated in other embodiments of method 200. The order of the steps may be interchangeable.

[0057] In operation 201, referring to Fig.10, forming a first filter, wherein the first filter includes a membrane and a mesh formed integrally with the membrane. In operation 202, the first filter is disposed in a chamber adjacent to an EUV source container. In operation 203, fuel debris is collected on the first filter in the chamber.

[0058] According to some embodiments of the present disclosure, another method of generating EUV radiation is disclosed. In some embodiments, the method 300 utilizes the EUV radiation source apparatus 100. The method 300 includes several operations, and the description and illustration should not be considered as limiting the sequence of operations. Fig.11 is a flow chart of a method 300 according to some embodiments. The method 300 includes several operations (301 to 308). Fig.11 Additional steps are provided before, during, and after the steps shown in , and some of the steps described below may be replaced or eliminated in other embodiments of method 300. The order of the steps may be interchangeable.

[0059] The method 300 begins with operation 301, wherein a first filter 131 is formed, wherein the first filter 131 comprises a first membrane 131a and a first mesh 131b integrally formed with the first membrane 131a. Figure 3 1. In some embodiments, the first membrane 131a and the first net 131b are formed simultaneously. In some embodiments, the first membrane 131a and the first net 131b are formed by etching a wafer. In some embodiments, operation 301 of method 300 is similar to operation 201 of method 200.

[0060] The method 300 continues with operation 302, wherein an EUV light path 108 is provided in a chamber 102. In some embodiments, an EUV radiation source apparatus 100 is provided, wherein the EUV radiation source apparatus comprises an EUV source container 101, a tin layer 112 disposed in the EUV source container 101, and a chamber 102 disposed adjacent to the EUV source container 101. In some embodiments, an EUV radiation source apparatus 100 is provided. Figure 1 . In some embodiments, additional components may be enclosed in the EUV source container 101, but the present disclosure is not limited thereto.

[0061] The method 300 continues with operation 303. Operation 303 includes providing a mirror in the chamber 102. In some embodiments, the first mirror 141 is disposed in the chamber 102.

[0062] The method 300 continues with operation 304. Operation 304 includes disposing a first filter 131 in the chamber 102 along the EUV light path 108, wherein the first filter 131 is disposed between the mirror and the EUV source container 101. In some embodiments, the first filter 131 is disposed between the tin layer 112 and the first mirror 141. In some embodiments, operation 304 of the method 300 is similar to operation 202 of the method 200.

[0063] The method 300 continues with operation 305. Operation 305 includes providing a semiconductor workpiece 151 in the chamber 102. In some embodiments, the semiconductor workpiece 151 (eg, a reticle) is disposed in the chamber 102. In some embodiments, the detector 161 is disposed in the chamber 102 and is configured to detect an image of a surface of the semiconductor workpiece 151.

[0064] The method 300 continues with operation 306. Operation 306 includes providing a second filter 132 between the first mirror 141 and the semiconductor workpiece 151. In some embodiments, the method 300 further includes forming the second filter 132, the second filter 132 including a second film 132a and a third mesh 132b integrally formed with the second film 132a. In some embodiments, providing Figure 7 132a and the third net 132b are formed simultaneously. In some embodiments, the second membrane 132a and the third net 132b are formed by etching a wafer.

[0065] The method 300 continues with operation 307 . Operation 307 includes transmitting the EUV radiation 202 through the first filter 131 and the second filter 132 .

[0066] In some embodiments, the method 300 further includes applying the laser beam 201 to irradiate the tin layer 112, thereby generating EUV radiation 202 and forming fuel debris 203. In some embodiments, the method 300 further includes the EUV radiation 202 exiting the EUV radiation source device 100. In some embodiments, the generation of the EUV radiation 202 and the exiting of the EUV radiation 202 are performed simultaneously.

[0067] In some embodiments, a first channel 105 and a second channel 106 are provided and respectively coupled to the EUV source container 101. The second channel 106 is in communication with the EUV source container 101 and the chamber 102. In some embodiments, the laser beam 201 is provided into the EUV source container 101 through the first channel 105. In some embodiments, the laser beam 201 passes through a first aperture 121 of a trap 120 before irradiating the tin layer 112.

[0068] In some embodiments, EUV radiation 202 exits EUV radiation source device 100 through second passage 106 and enters chamber 102. In some embodiments, EUV radiation 202 passes through second aperture 122 of trap 120 and enters second passage 106. In some embodiments, after EUV radiation 202 enters chamber 102, EUV radiation 202 passes through first filter 131 and second filter 132 and is directed to semiconductor workpiece 151 in chamber 102.

[0069] In some embodiments, when the first film 131a and the first net 131b are integrally formed, the transmittance of the first filter 131 is greater than 60%. In some embodiments, the transmittance of the first filter 131 is greater than 80%. In some embodiments, when the second film 132a and the third net 132b are integrally formed, the transmittance of the second filter 132 is greater than 70%. In some embodiments, the transmittance of the second filter 132 is greater than 75%. In some embodiments, the total transmittance of the first filter 131 and the second filter 132 is greater than 60%.

[0070] The method 300 continues with operation 308. Operation 308 includes collecting the fuel debris 203 on the first filter 131 in the chamber 102. In some embodiments, when the tin layer 112 is irradiated by the laser beam 201, the fuel debris 203 generated from the collision may be collected by the catcher 120 and the first filter 131. The catcher 120 prevents the fuel debris 203 from splashing around the EUV source container 101, and the first filter 131 prevents the fuel debris 203 from splashing around the chamber 102.

[0071] In some embodiments, operations 307 and 308 may be performed simultaneously. In some embodiments, operation 308 of method 300 is similar to operation 203 of method 200 .

[0072] Figure 12 to Figure 14 is a schematic diagram of one or more operations of a method of generating EUV radiation according to some embodiments of the present disclosure. Fig.12 The method 300 further includes providing a plurality of first filters 131f, 131g, 131h, and 131i in the chamber 102 and disposed on the carrier 139. In some embodiments, providing Figure 6 131f, 131g, 131h, and 131i and a carrier 139 are shown in FIG. In some embodiments, one of the first filters 131f disposed on the carrier 139 is disposed in the EUV light path 108 and collects fuel debris 203 on a portion of the first filter 131f. In some embodiments, reference Fig.13When one of the first filters 131f has collected some fuel debris 203 by the used portion 131j and is considered to be used and contaminated, the first filter 131f is rotated at predetermined intervals or around the center C2 and the fuel debris 203 may be collected by the new portion 131k of the first filter 131f.

[0073] In some embodiments, reference Fig.14 When the first filter 131f in the EUV light path 108 has collected enough fuel debris 203 and is considered to be used and contaminated, the carrier 139 is rotated at predetermined intervals or around the center C1 to place a new and unused first filter 131g in the EUV light path 108. In some embodiments, when the first filters 131f, 131g, 131h, and 131i in the chamber 102 are contaminated, the carrier and the first filters 131f, 131g, 131h, and 131i are removed from the chamber 102.

[0074] One aspect of the present disclosure relates to an EUV radiation source device, which comprises: an EUV source container; a tin layer disposed in the EUV source container; a chamber disposed adjacent to the EUV source container; and a first filter disposed in the chamber, wherein the first filter comprises a membrane and a mesh disposed on the membrane, and the membrane and the mesh are formed integrally.

[0075] In some embodiments, the EUV radiation source device further includes a first mirror disposed in the chamber, wherein the first filter is disposed between the tin layer and the first mirror. In some embodiments, the first filter is a debris filter and is configured to collect fuel debris generated from the collision of the laser beam with the tin layer. In some embodiments, the first filter includes silicon. In some embodiments, the EUV radiation source device further includes a second mirror disposed in the chamber and adjacent to the first mirror, wherein the first filter is disposed between the first mirror and the second mirror. In some embodiments, the first filter is disposed at an aperture position. In some embodiments, the first filter is an out-of-band radiation filter. In some embodiments, the first filter includes silicon, EUV film, or zirconium. In some embodiments, the mesh is a hexagonal wire mesh. In some embodiments, the profile of the wire of the mesh is trapezoidal from a cross-sectional view. In some embodiments, the EUV radiation source device further includes a second filter disposed adjacent to the first filter; and a rotatable carrier, wherein the first filter and the second filter are attached to the rotatable carrier.

[0076] Aspects of the present disclosure relate to an EUV radiation source device. The EUV radiation source device comprises: a chamber; an EUV source configured to supply EUV radiation into the chamber through an outlet port; an EUV light path that travels from the outlet port along the chamber; and a first filter positioned in the EUV light path and configured to allow the EUV radiation to pass therethrough, wherein the first filter comprises a first film and a first mesh formed integrally with the first film.

[0077] In some embodiments, the EUV radiation source device further includes a mirror positioned in the EUV light path and within the chamber, wherein the first filter is a debris filter and is disposed between the mirror and an outlet. In some embodiments, the EUV radiation source device further includes a retraction mask disposed in the chamber, and a mirror positioned in the EUV light path and disposed between the retraction mask and the outlet, wherein the first filter is an out-of-band radiation filter and is disposed between the mirror and the retraction mask. In some embodiments, the EUV radiation source device further includes a retraction mask disposed in the chamber, a mirror positioned in the EUV light path and disposed between the retraction mask and the outlet, and a second filter disposed between the mirror and the retraction mask, wherein the first filter is disposed between the mirror and the outlet, and the second filter includes a second film and a second mesh formed integrally with the second film.

[0078] Aspects of the present disclosure are directed to a method of generating EUV radiation. The method includes: forming a first filter including a membrane and a mesh integrally formed with the membrane; disposing the first filter in a chamber adjacent to an EUV source container; and collecting fuel debris on the first filter in the chamber.

[0079] In some embodiments, the method further includes providing an EUV light path in the chamber, wherein the first filter is disposed at the EUV light path. In some embodiments, the method further includes disposing the first filter on a rotatable carrier in the chamber; disposing a second filter on the rotatable carrier and adjacent to the first filter; rotating the rotatable carrier after collecting the fuel debris on the first filter; and collecting the fuel debris on the second filter. In some embodiments, the method further includes transmitting EUV radiation through the first filter, wherein the transmittance of the first filter is greater than 60%. In some embodiments, the method further includes providing a mirror in the chamber, wherein the first filter is disposed between the mirror and the EUV source container; providing a doubling mask in the chamber; providing a second filter between the mirror and the doubling mask; and transmitting the EUV radiation through the first filter and the second filter, wherein the total transmittance of the first filter and the second filter is greater than 60%.

[0080] The foregoing summarizes the features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art will appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present disclosure.

[0081] Explanation of symbols

[0082] 100: Extreme Ultraviolet (EUV) Radiation Source Device

[0083] 101: Extreme Ultraviolet (EUV) Source Container

[0084] 102: Chamber

[0085] 105: First channel

[0086] 106: Second channel

[0087] 108: Extreme Ultraviolet (EUV) Light Path

[0088] 110: Crucible

[0089] 112:Tin layer

[0090] 120:Capture

[0091] 121: First aperture

[0092] 122: Second aperture

[0093] 131: First filter

[0094] 131a: First film

[0095] 131b: First Network

[0096] 131c: First side

[0097] 131d: Second Network

[0098] 131e: Second side

[0099] 131f: First filter

[0100] 131g: First filter

[0101] 131h: First filter

[0102] 131i: First filter

[0103] 131j: Used part

[0104] 131k: New section

[0105] 132: Second filter

[0106] 132a: Second film

[0107] 132b: Third Network

[0108] 132c: First side

[0109] 132d: The Fourth Network

[0110] 132e: Second side

[0111] 139: Carrier

[0112] 141: First Mirror

[0113] 142: Second Mirror

[0114] 151:Semiconductor workpieces

[0115] 161: Detector

[0116] 200: Method

[0117] 201:Laser beam / operation

[0118] 202: Extreme Ultraviolet (EUV) Radiation / Operation

[0119] 203: Fuel Debris / Handling

[0120] 300: Methods

[0121] 301: Operation

[0122] 302: Operation

[0123] 303: Operation

[0124] 304: Operation

[0125] 305: Operation

[0126] 306: Operation

[0127] 307: Operation

[0128] 308: Operation

[0129] C1: First Center

[0130] C2: Second Center

[0131] Cw1: cell width

[0132] Cw2: cell width

[0133] L: Location

[0134] L1: Length

[0135] L2: Length

[0136] L3: Length

[0137] L4: Length

[0138] R1: First direction

[0139] R2: Second direction

[0140] Sw1: Width of pillar

[0141] Sw2: Width of pillar

[0142] T1: Thickness

[0143] T2: Thickness

[0144] T3:Thickness

[0145] T4: Thickness.

Claims

1. An extreme ultraviolet radiation source device, characterized in that include: EUV source container; a tin layer disposed in the extreme ultraviolet source container; a chamber disposed adjacent to the extreme ultraviolet source container; and a first filter disposed in the chamber, The first filter includes a membrane and a net disposed on the membrane, and the membrane and the net are formed integrally.

2. The device according to claim 1, characterized in that Further including: a first mirror disposed in the chamber, The first filter is disposed between the tin layer and the first mirror.

3. The device according to claim 2, characterized in that The first filter is a debris filter and is configured to collect fuel debris generated from the collision of the laser beam with the tin layer.

4. The device according to claim 1, characterized in that Further including: a first mirror disposed in the chamber; and a second mirror disposed in the chamber adjacent to the first mirror, The first filter is disposed between the first mirror and the second mirror.

5. The device according to claim 4, characterized in that The first filter is disposed at the aperture position.

6. The device according to claim 1, characterized in that The profile of the wires of the mesh is trapezoidal when viewed in cross-section.

7. The device according to claim 1, characterized in that Further including: a second filter disposed adjacent to the first filter; and Rotatable carrier, Wherein the first filter and the second filter are attached to the rotatable carrier.

8. An extreme ultraviolet radiation source device, characterized in that include: Chamber; an EUV source configured to supply EUV radiation into the chamber through an outlet port; an EUV light path that travels from the exit port along the chamber; and A first filter is positioned in the EUV light path and is configured to allow the EUV radiation to pass therethrough, wherein the first filter includes a first film and a first mesh integrally formed with the first film.

9. The device according to claim 8, characterized in that Further including: a mirror positioned in the path of the extreme ultraviolet light and within the chamber, Wherein the first filter is a debris filter and is disposed between the mirror and the outlet port.

10. The device according to claim 8, characterized in that Further including: A shrink mask, which is disposed in the chamber; and A mirror is positioned in the EUV light path and disposed between the debulking mask and the exit port, wherein the first filter is an out-of-band radiation filter and is disposed between the mirror and the debulking mask.

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