Deposition source

Abstract

A deposition source includes: a first frame including a lower space of a first crucible, a lower space of a second crucible, and a first partition wall disposed between the lower space of the first crucible and the lower space of the second crucible; and a second frame including an upper space of the first crucible, an upper space of the second crucible, a first nozzle connected to the first crucible, a second nozzle connected to the second crucible, and a second partition wall provided between the upper space of the first crucible and the upper space of the second crucible, wherein a discharge passage is disposed between the first partition wall of the first frame and the second partition wall of the second frame, and the first partition wall contacts the second partition wall.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0079903 filed in the Korean Intellectual Property Office on June 21, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments relate to a deposition source. Background Art

[0004] As information technology develops, the importance of display devices as a connection medium between users and information is being emphasized. Therefore, the use of display devices such as liquid crystal display devices and organic light emitting display devices is increasing.

[0005] Electrodes, light-emitting layers, organic layers, inorganic layers, etc. in a display device may be formed by various methods. A representative method may be a vacuum deposition method in which a predetermined material is deposited in a vacuum atmosphere to form a thin film. The vacuum deposition method may be performed by setting a mask between a deposition source and a target substrate in a chamber, sublimating or evaporating a deposition material of the deposition source, and depositing the deposition material on the target substrate. Utility Model Content

[0006] The embodiment provides a deposition source capable of preventing deposition materials from being mixed inside.

[0007] However, the embodiments of the present disclosure are not limited to those described herein.The above and other embodiments will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0008] A deposition source according to an embodiment may include: a first frame including a lower space of a first crucible, a lower space of a second crucible, and a first partition wall disposed between the lower space of the first crucible and the lower space of the second crucible; and a second frame including an upper space of the first crucible, an upper space of the second crucible, a first nozzle connected to the first crucible, a second nozzle connected to the second crucible, and a second partition wall disposed between the upper space of the first crucible and the upper space of the second crucible. An exhaust channel may be disposed between the first partition wall of the first frame and the second partition wall of the second frame. The first partition wall of the first frame may contact the second partition wall of the second frame.

[0009] The first nozzle and the second nozzle may be arranged along a first direction.

[0010] The exhaust passage may extend in the first direction.

[0011] The first crucible and the second crucible may be arranged in a second direction intersecting the first direction.

[0012] Each of the first crucible and the second crucible may extend in the first direction.

[0013] The deposition source may further include a fastening member passing through the exhaust channel and fastening the first partition wall and the second partition wall.

[0014] The fastening member may be a bolt.

[0015] A lower portion of the discharge passage may be formed as a portion of the first partition wall, and an upper portion of the discharge passage may be formed as a portion of the second partition wall.

[0016] The upper portion of the discharge passage may be formed as a groove of the second partition wall, and the lower portion of the discharge passage may be formed as a flat surface of the first partition wall.

[0017] The upper portion of the discharge passage may be formed as a flat surface of the second partition wall, and the lower portion of the discharge passage may be formed as a groove of the first partition wall.

[0018] The upper portion of the discharge passage may be formed as a groove of the second partition wall, and the lower portion of the discharge passage may be formed as a groove of the first partition wall.

[0019] A deposition source according to another embodiment may include: a 1-1 frame including a lower space of a first crucible; a 1-2 frame including a lower space of a second crucible; and a second frame including an upper space of the first crucible, an upper space of the second crucible, a first nozzle connected to the first crucible, and a second nozzle connected to the second crucible. A first portion of a partition wall of the second frame disposed between the first crucible and the second crucible may contact the 1-1 frame, and a second portion of the partition wall may contact the 1-2 frame.

[0020] A portion of the 1-1 frame in contact with the first portion of the partition wall of the second frame may be spaced apart from a portion of the 1-2 frame in contact with the second portion of the partition wall of the second frame.

[0021] The first nozzle and the second nozzle may be arranged along a first direction.

[0022] The first crucible and the second crucible may be arranged in a second direction intersecting the first direction.

[0023] Each of the first crucible and the second crucible may extend in the first direction.

[0024] A deposition source according to another embodiment may include: a first frame including a lower space of a first crucible and a lower space of a second crucible; a 2-1 frame including an upper space of the first crucible and a first nozzle connected to the first crucible; and a 2-2 frame including an upper space of the second crucible and a second nozzle connected to the second crucible. A first portion of a partition wall of the first frame disposed between the first crucible and the second crucible may contact the 2-1 frame, and a second portion of the partition wall of the first frame may contact the 2-2 frame.

[0025] A portion of the 2-1 frame that contacts the first portion of the partition wall of the first frame may be spaced apart from a portion of the 2-2 frame that contacts the second portion of the partition wall of the first frame.

[0026] The first nozzle and the second nozzle may be arranged along a first direction.

[0027] The first crucible and the second crucible may be arranged in a second direction intersecting the first direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings, which are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the inventive concept and together with the description serve to explain the principles of the inventive concept.

[0029] Figure 1 and Figure 2 is a schematic diagram for describing a deposition apparatus according to an embodiment.

[0030] Figure 3 and Figure 4 is a schematic diagram for describing a deposition source according to a first embodiment.

[0031] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 and Fig.11 is a schematic diagram for describing a deposition source according to a second embodiment.

[0032] Fig.12 and Fig.13 is a schematic diagram for describing a deposition source according to a third embodiment.

[0033] Fig.14 and Fig.15 is a schematic diagram for describing a deposition source according to a fourth embodiment. DETAILED DESCRIPTION

[0034] In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the apparatus or method disclosed herein. However, it is apparent that various embodiments can be practiced without these specific details or with one or more equivalent arrangements. Here, various embodiments do not have to be exclusive and do not limit the present disclosure. For example, the specific shape, configuration and characteristics of an embodiment can be used or implemented in another embodiment.

[0035] Unless otherwise specified, the illustrated embodiments should be understood to provide features of the present invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of various embodiments, etc. (hereinafter, individually or collectively referred to as "elements") can be combined, separated, interchanged and / or rearranged in other ways without departing from the present invention.

[0036] The use of cross-hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between the illustrated elements, and / or any other characteristic, attribute, performance, etc. of the element, unless otherwise specified. Further, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. When the embodiments may be implemented differently, the specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or in an order opposite to the described sequence. In addition, the same reference numerals represent the same elements.

[0037] When an element such as a layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, it may be directly on, directly connected to or coupled to, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection, and / or a fluid connection with or without intervening elements. Further, the first direction DR1, the second direction DR2, and the third direction DR3 are not limited to the three axes of a rectangular coordinate system (such as the X-axis, the Y-axis, and the Z-axis), and may be interpreted in a broader sense. For example, the first direction DR1, the second direction DR2, and the third direction DR3 may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of the present disclosure, "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. Furthermore, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as any combination of only X, only Y, only Z, or two or more of X, Y, and Z. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0038] Although the terms "first", "second", etc. can be used in this article to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below can be referred to as the second element.

[0039] Spatially relative terms such as "below," "below," "below," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein for descriptive purposes, and thereby describe the relationship of one element to another element as illustrated in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is flipped, an element described as being "below" or "below" other elements or features will then be oriented "above" the other elements or features. Thus, the term "below" can cover both above and below orientations. In addition, the device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and for this reason, the spatially relative descriptors used herein are interpreted accordingly.

[0040] The terms used herein are for the purpose of describing a particular embodiment, and are not intended to be restrictive. As used herein, the "one" and "the" in the singular are intended to also include plural forms, unless the context clearly states otherwise. In addition, the terms "include" and / or "comprise" when used in this specification clearly indicate that there are stated features, integers, steps, operations, elements, parts or their groups, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts or their groups. It should also be noted that, as used herein, the terms "substantially", "about" and other similar terms are used as approximate terms rather than as degree terms, for this reason, for considering the measured values, calculated values ​​and / or the inherent deviations of the values ​​that will be recognized by those of ordinary skill in the art.

[0041] Various embodiments are described herein with reference to cross-sectional views and / or exploded views as schematic diagrams of embodiments and / or intermediate structures. As such, variations in the illustrated shapes caused by, for example, manufacturing techniques and / or tolerances can be expected. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to the specific illustrated shapes of the regions, but rather include deviations in shapes caused by, for example, manufacturing. In this way, the regions illustrated in the drawings may be schematic in nature and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, are not necessarily intended to be restrictive.

[0042] According to the practice in the art, some embodiments are described and illustrated in the form of functional blocks, units and / or modules in the accompanying drawings. It will be understood by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits (such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connectors, etc.) that can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and can be optionally driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or implemented as a combination of dedicated hardware that performs some functions and processors that perform other functions (e.g., one or more programmed microprocessors and associated circuits). In addition, without departing from the scope of the present invention, each block, unit and / or module of some embodiments can be physically divided into two or more interacting and discrete blocks, units and / or modules. Further, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the scope of the invention.

[0043] Figure 1 and Figure 2is a schematic diagram for describing a deposition apparatus according to an embodiment.

[0044] refer to Figure 1 , a deposition apparatus DD according to an embodiment may include a chamber CH, a moving plate MP, a mask assembly MK, and a deposition source SC.

[0045] The deposition device DD may deposit a deposition material on a target substrate SUB. For example, the target substrate SUB may be a substrate of a display device. The deposition material may include an organic material, an inorganic material, etc. For example, the deposition material may be deposited on the target substrate SUB to form an organic light emitting element.

[0046] The chamber CH may have a closed space therein. The moving plate MP, the mask assembly MK, and the deposition source SC may be disposed in the inner space of the chamber CH. The chamber CH may have one or more gates GA. For example, the gate GA may be disposed on the side wall of the chamber CH. The gate GA may open and close the inner space of the chamber CH. For example, the target substrate SUB may enter or leave the inner space of the chamber CH through the gate GA.

[0047] The moving plate MP may be movable inside the chamber CH. For example, with an upper portion of the moving plate MP connected to a ceiling of the chamber CH, the moving plate MP may move in the first direction DR1, the second direction DR2, or the third direction DR3.

[0048] In one embodiment, the first direction DR1, the second direction DR2, and the third direction DR3 may be directions intersecting each other. In another embodiment, the first direction DR1, the second direction DR2, and the third direction DR3 may be directions perpendicular to each other. Hereinafter, the first direction DR1 and the second direction DR2 may represent horizontal directions, and the third direction DR3 may represent a vertical direction.

[0049] The target substrate SUB may be disposed under the moving plate MP. The moving plate MP may clamp the target substrate SUB by using an electrostatic force or a magnetic force. The moving plate MP may move the target substrate SUB inside the chamber CH.

[0050] The mask assembly MK may be disposed between the target substrate SUB and the deposition source SC. The mask assembly MK may overlap the target substrate SUB. The mask assembly MK may be supported by a support member SU disposed inside the chamber CH.

[0051] An opening OP may be defined in the mask assembly MK. A deposition material ejected from the deposition source SC may pass through the opening OP and be deposited on the target substrate SUB.

[0052] The deposition source SC may be disposed under the mask assembly MK. The deposition source SC may contain a deposition material. The deposition source SC may contain a single deposition material or a plurality of deposition materials.

[0053] The deposition source SC may evaporate or sublime a deposition material contained therein and provide it to the target substrate SUB.

[0054] Figure 2 is shown as an example Figure 1 Schematic diagram of the method of moving the deposition source SC shown in FIG. Figure 2 In Figure 1 The target substrate SUB and the deposition source SC are shown in FIG. 1 , and other components are omitted.

[0055] refer to Figure 2 , the target substrate SUB may be disposed above the deposition source SC in the third direction DR3. A surface of the target substrate SUB may face the deposition source SC and may be spaced apart from the deposition source SC by a distance TS. One side of the target substrate SUB may extend in the first direction DR1 and the other side may extend in the second direction DR2.

[0056] For example, the deposition source SC may be a linear deposition source. For example, the deposition source SC may include nozzles NZ1 and NZ2 arranged along the first direction DR1.

[0057] In the case where the deposition source SC contains only a single deposition material, the nozzles NZ1 and NZ2 may be connected to a crucible storing the single deposition material.

[0058] In the case where the deposition source SC contains a first deposition material and a second deposition material different from each other, the first nozzle NZ1 may be connected to a first crucible storing the first deposition material, and the second nozzle NZ2 may be connected to a second crucible storing the second deposition material. The first nozzle NZ1 and the second nozzle NZ2 may be arranged along the first direction DR1. For example, the first nozzle NZ1 and the second nozzle NZ2 may be alternately disposed along the first direction DR1.

[0059] In another example, the deposition source SC contains a first deposition material, a second deposition material, and a third deposition material that are different from each other, and a third nozzle may be further provided. For example, the first nozzle NZ1 may be connected to a first crucible storing the first deposition material, the second nozzle NZ2 may be connected to a second crucible storing the second deposition material, and the third nozzle may be connected to a third crucible storing the third deposition material. The first nozzle NZ1, the second nozzle NZ2, and the third nozzle may be alternately arranged along the first direction DR1.

[0060] As such, the number of deposition materials that can be applied to the deposition source SC according to the embodiment is not limited. Hereinafter, for convenience of description, a case where the deposition source SC includes a first deposition material and a second deposition material will be described as an example.

[0061] The deposition source SC may include a first frame F1 and a second frame F2. The second frame F2 may be a frame including nozzles NZ1 and NZ2. The second frame F2 may be located on the first frame F1 in the third direction DR3.

[0062] The deposition source SC may spray the deposition material while moving in the second direction DR2. Accordingly, a thin film may be formed on the entire surface of the target substrate SUB.

[0063] Figure 3 and Figure 4 is a schematic diagram for describing a deposition source according to a first embodiment. Figure 3 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCa taken along line II'. Figure 4 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCa taken along line II-II'.

[0064] The deposition source SCa may include a first frame F1a and a second frame F2a.

[0065] The first frame F1a may include a lower space of the first crucible CRU1a and a lower space of the second crucible CRU2a. The first frame F1a may be integrally formed as a single body.

[0066] The second frame F2a may include an upper space of the first crucible CRU1a, an upper space of the second crucible CRU2a, a first nozzle NZ1a connected to the first crucible CRU1a, and a second nozzle NZ2a connected to the second crucible CRU2a. The second frame F2a may be integrally formed as a single body.

[0067] The first crucible CRU1a may refer to a space in which a lower space and an upper space of the first crucible CRU1a are combined with each other. The first crucible CRU1a may accommodate the first deposition material DM1.

[0068] The second crucible CRU2a may refer to a space where a lower space and an upper space of the second crucible CRU2a are combined with each other. The second crucible CRU2a may accommodate the second deposition material DM2.

[0069] The first crucible CRU1a and the second crucible CRU2a may be arranged in the second direction DR2. Each of the first crucible CRU1a and the second crucible CRU2a may extend in the first direction DR1.

[0070] The first frame F1a may include a first partition wall W1a between the first crucible CRU1a and the second crucible CRU2a. The first partition wall W1a may separate a lower space of the first crucible CRU1a from a lower space of the second crucible CRU2a.

[0071] The second frame F2a may include a second partition wall W2a between the first crucible CRU1a and the second crucible CRU2a. The second partition wall W2a may separate an upper space of the first crucible CRU1a from an upper space of the second crucible CRU2a.

[0072] A surface SF1a of the first partition wall W1a and a surface SF2a of the second partition wall W2a may contact each other to prevent mixing of the first deposition material DM1 and the second deposition material DM2.

[0073] However, the deposition materials DM1 and DM2 may form a mixed flow CT in the first crucible CRU1a or the second crucible CRU2a along the gap between the first partition wall W1a and the second partition wall W2a. In the case where the mixed flow CT is formed / occurred, an error may occur in sensing the deposition amount, and a problem that the deposition amount is not smoothly controlled may occur.

[0074] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 and Fig.11 is a schematic diagram for describing a deposition source according to a second embodiment.

[0075] Figure 5 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCb taken along line II'. Figure 6 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCb taken along line II-II'.

[0076] The deposition source SCb may include a first frame F1b and a second frame F2b.

[0077] The first frame F1b may include a lower space of the first crucible CRU1b and a lower space of the second crucible CRU2b. The first frame F1b may be integrally formed as a single body.

[0078] The second frame F2b may include an upper space of the first crucible CRU1b, an upper space of the second crucible CRU2b, a first nozzle NZ1b connected to the first crucible CRU1b, and a second nozzle NZ2b connected to the second crucible CRU2b. The second frame F2b may be integrally formed as a single body.

[0079] The first crucible CRU1b may refer to a space in which a lower space and an upper space of the first crucible CRU1b are combined with each other. The first crucible CRU1b may accommodate the first deposition material DM1.

[0080] The second crucible CRU2b may refer to a space where a lower space and an upper space of the second crucible CRU2b are combined with each other. The second crucible CRU2b may accommodate the second deposition material DM2.

[0081] The first crucible CRU1b and the second crucible CRU2b may be arranged along the second direction DR2. Each of the first crucible CRU1b and the second crucible CRU2b may extend in the first direction DR1.

[0082] The first frame F1b may include a first partition wall W1b between the first crucible CRU1b and the second crucible CRU2b. The first partition wall W1b may separate a lower space of the first crucible CRU1b from a lower space of the second crucible CRU2b.

[0083] The second frame F2b may include a second partition wall W2b between the first crucible CRU1b and the second crucible CRU2b. The second partition wall W2b may separate an upper space of the first crucible CRU1b from an upper space of the second crucible CRU2b.

[0084] A surface SF1 b of the first partition wall W1 b and a surface SF2 b of the second partition wall W2 b may contact each other to prevent mixing of the first deposition material DM1 and the second deposition material DM2 .

[0085] According to an embodiment, the exhaust passage VH may be located between the first partition wall W1b of the first frame F1b and the second partition wall W2b of the second frame F2b positioned between the first crucible CRU1b and the second crucible CRU2b.

[0086] refer to Figure 7 , showing the area around the discharge channel VH in an enlarged manner.

[0087] The lower portion of the discharge channel VH may be formed as a portion of the first partition wall W1b, and the upper portion of the discharge channel VH may be formed as a portion of the second partition wall W2b. For example, the upper portion of the discharge channel VH may be formed as the groove TCb of the second partition wall W2b, and the lower portion of the discharge channel VH may be formed as the flat surface SF1b of the first partition wall W1b. The discharge channel VH may extend in the first direction DR1.

[0088] According to this embodiment, Figure 3 and Figure 4In contrast, when the deposition material flows into the gap between the first partition wall W1b and the second partition wall W2b, the deposition material may be discharged to the outside of the deposition source SCb through the discharge channel VH. Accordingly, mixing of the deposition materials DM1 and DM2 in the first crucible CRU1b or the second crucible CRU2b may be prevented.

[0089] According to an embodiment, the deposition source SCb may further include a fastening member VT that passes through the exhaust channel VH and fastens the first partition wall W1b and the second partition wall W2b. For example, the fastening member VT may be a bolt.

[0090] Since the fastening member VT tightens the upper and lower portions of the discharge channel VH, the possibility of the deposition material flowing out of the discharge channel VH can be further reduced. The fastening member VT can be applied to the following Figure 8 , Fig. 9 , Fig.10 and Fig.11 All the exhaust channels VH are described herein, and for the convenience of description, redundant descriptions thereof will be omitted.

[0091] Figure 8 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCc taken along line II'. Fig. 9 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCc taken along line II-II'.

[0092] The deposition source SCc may include a first frame F1c and a second frame F2c.

[0093] The first frame F1c may include a lower space of the first crucible CRU1c and a lower space of the second crucible CRU2c. The first frame F1c may be integrally formed as a single body.

[0094] The second frame F2c may include an upper space of the first crucible CRU1c, an upper space of the second crucible CRU2c, a first nozzle NZ1c connected to the first crucible CRU1c, and a second nozzle NZ2c connected to the second crucible CRU2c. The second frame F2c may be integrally formed as a single body.

[0095] The first crucible CRU1c may refer to a space where a lower space and an upper space of the first crucible CRU1c are combined with each other. The first crucible CRU1c may accommodate the first deposition material DM1.

[0096] The second crucible CRU2c may refer to a space where a lower space and an upper space of the second crucible CRU2c are combined with each other. The second crucible CRU2c may accommodate the second deposition material DM2.

[0097] The first crucible CRU1c and the second crucible CRU2c may be arranged along the second direction DR2. Each of the first crucible CRU1c and the second crucible CRU2c may extend in the first direction DR1.

[0098] The first frame F1c may include a first partition wall W1c between the first crucible CRU1c and the second crucible CRU2c. The first partition wall W1c may separate a lower space of the first crucible CRU1c from a lower space of the second crucible CRU2c.

[0099] The second frame F2c may include a second partition wall W2c between the first crucible CRU1c and the second crucible CRU2c. The second partition wall W2c may separate an upper space of the first crucible CRU1c from an upper space of the second crucible CRU2c.

[0100] A surface SF1c of the first partition wall W1c and a surface SF2c of the second partition wall W2c may contact each other to prevent mixing of the first deposition material DM1 and the second deposition material DM2.

[0101] According to an embodiment, the exhaust passage VH may be located between the first partition wall W1c of the first frame F1c and the second partition wall W2c of the second frame F2c positioned between the first crucible CRU1c and the second crucible CRU2c.

[0102] The lower portion of the discharge channel VH may be formed as a portion of the first partition wall W1c, and the upper portion of the discharge channel VH may be formed as a portion of the second partition wall W2c. For example, the upper portion of the discharge channel VH may be formed as a flat surface SF2c of the second partition wall W2c, and the lower portion of the discharge channel VH may be formed as a groove TCc of the first partition wall W1c. The discharge channel VH may extend in the first direction DR1.

[0103] According to this embodiment, Figure 3 and Figure 4 In contrast, when the deposition material flows into the gap between the first partition wall W1c and the second partition wall W2c, the deposition material may be discharged to the outside of the deposition source SCc through the discharge channel VH. Accordingly, mixing of the deposition materials DM1 and DM2 in the first crucible CRU1c or the second crucible CRU2c may be prevented.

[0104] Fig.10 It is along Figure 2 0 is an example of a schematic cross-sectional view of the deposition source SCd taken along line II′. Fig.11 It is along Figure 2 0 is an example of a schematic cross-sectional view of the deposition source SCd taken along line II-II′.

[0105] The deposition source SCd may include a first frame F1d and a second frame F2d.

[0106] The first frame F1d may include a lower space of the first crucible CRU1d and a lower space of the second crucible CRU2d. The first frame F1d may be integrally formed as a single body.

[0107] The second frame F2d may include an upper space of the first crucible CRU1d, an upper space of the second crucible CRU2d, a first nozzle NZ1d connected to the first crucible CRU1d, and a second nozzle NZ2d connected to the second crucible CRU2d. The second frame F2d may be integrally formed as a single body.

[0108] The first crucible CRU1d may refer to a space where a lower space and an upper space of the first crucible CRU1d are combined with each other. The first crucible CRU1d may accommodate the first deposition material DM1.

[0109] The second crucible CRU2d may refer to a space where a lower space and an upper space of the second crucible CRU2d are combined with each other. The second crucible CRU2d may accommodate the second deposition material DM2.

[0110] The first crucible CRU1d and the second crucible CRU2d may be arranged in the second direction DR2. Each of the first crucible CRU1d and the second crucible CRU2d may extend in the first direction DR1.

[0111] The first frame F1d may include a first partition wall W1d between the first crucible CRU1d and the second crucible CRU2d. The first partition wall W1d may separate a lower space of the first crucible CRU1d from a lower space of the second crucible CRU2d.

[0112] The second frame F2d may include a second partition wall W2d between the first crucible CRU1d and the second crucible CRU2d. The second partition wall W2d may separate an upper space of the first crucible CRU1d from an upper space of the second crucible CRU2d.

[0113] A surface SF1d of the first partition wall W1d and a surface SF2d of the second partition wall W2d may contact each other to prevent mixing of the first deposition material DM1 and the second deposition material DM2.

[0114] According to an embodiment, the exhaust passage VH may be located between the first partition wall W1d of the first frame F1d and the second partition wall W2d of the second frame F2d positioned between the first crucible CRU1d and the second crucible CRU2d.

[0115] The lower portion of the discharge channel VH may be formed as a portion of the first partition wall W1d, and the upper portion of the discharge channel VH may be formed as a portion of the second partition wall W2d. For example, the upper portion of the discharge channel VH may be formed as the groove TC2d of the second partition wall W2d, and the lower portion of the discharge channel VH may be formed as the groove TC1d of the first partition wall W1d. The discharge channel VH may extend in the first direction DR1.

[0116] According to this embodiment, Figure 3 and Figure 4 In contrast, when the deposition material flows into the gap between the first partition wall W1d and the second partition wall W2d, the deposition material may be discharged to the outside of the deposition source SCd through the discharge channel VH. Accordingly, mixing of the deposition materials DM1 and DM2 in the first crucible CRU1d or the second crucible CRU2d may be prevented.

[0117] Fig.12 and Fig.13 is a schematic diagram for describing a deposition source according to a third embodiment.

[0118] Fig.12 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCe taken along line II'. Fig.13 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCe taken along line II-II'.

[0119] The deposition source SCe may include a 1-1th frame F1s1e, a 1-2th frame F1s2e, and a second frame F2e.

[0120] The 1-1th frame F1s1e may include a lower space of the first crucible CRU1e.

[0121] The 1-2 th frame F1s2e may include a lower space of the second crucible CRU2e.

[0122] The second frame F2e may include an upper space of the first crucible CRU1e, an upper space of the second crucible CRU2e, a first nozzle NZ1e connected to the first crucible CRU1e, and a second nozzle NZ2e connected to the second crucible CRU2e. The second frame F2e may be integrally formed as a single body.

[0123] The first crucible CRU1e may refer to a space where a lower space and an upper space of the first crucible CRU1e are combined with each other. The first crucible CRU1e may accommodate the first deposition material DM1.

[0124] The second crucible CRU2e may refer to a space where a lower space and an upper space of the second crucible CRU2e are combined with each other. The second crucible CRU2e may accommodate the second deposition material DM2.

[0125] The first crucible CRU1e and the second crucible CRU2e may be arranged along the second direction DR2. Each of the first crucible CRU1e and the second crucible CRU2e may extend in the first direction DR1.

[0126] The second frame F2e may include a partition wall W2e between the first crucible CRU1e and the second crucible CRU2e. The partition wall W2e may separate an upper space of the first crucible CRU1e from an upper space of the second crucible CRU2e.

[0127] A portion of the partition wall W2e of the second frame F2e located between the first crucible CRU1e and the second crucible CRU2e may contact the 1-1st frame F1s1e, and another portion of the partition wall W2e may contact the 1-2nd frame F1s2e. For example, a portion of the partition wall W2e may contact the partition wall W1s1e of the 1-1st frame F1s1e, and another portion of the partition wall W2e may contact the partition wall W1s2e of the 1-2nd frame F1s2e.

[0128] The partition wall W1s1e of the 1-1st frame F1s1e that contacts a portion of the partition wall W2e may be spaced apart from the partition wall W1s2e of the 1-2nd frame F1s2e that contacts another portion of the partition wall W2e. Fig.12 and Fig.13 In the embodiment, even if the exhaust passage is not provided, the undesired deposition materials can be discharged through the space between the partition walls W2e, W1s1e and W1s2e. Accordingly, the deposition materials DM1 and DM2 can be prevented from mixing in the first crucible CRU1e or the second crucible CRU2e.

[0129] Fig.14 and Fig.15 is a schematic diagram for describing a deposition source according to a fourth embodiment.

[0130] Fig.14 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCf taken along line II'. Fig.15 It is along Figure 2 An example of a schematic cross-sectional view of the deposition source SCf taken along line II-II'.

[0131] The deposition source SCf may include a first frame F1f, a 2-1st frame F2s1f, and a 2-2nd frame F2s2f.

[0132] The first frame F1f may include a lower space of the first crucible CRU1f and a lower space of the second crucible CRU2f. The first frame F1f may be integrally formed as a single body.

[0133] The 2-1th frame F2s1f may include an upper space of the first crucible CRU1f and a first nozzle NZ1f connected to the first crucible CRU1f.

[0134] The 2-2nd frame F2s2f may include an upper space of the second crucible CRU2f and a second nozzle NZ2f connected to the second crucible CRU2f.

[0135] The first crucible CRU1f may refer to a space in which a lower space and an upper space of the first crucible CRU1f are combined with each other. The first crucible CRU1f may accommodate the first deposition material DM1.

[0136] The second crucible CRU2f may refer to a space where a lower space and an upper space of the second crucible CRU2f are combined with each other. The second crucible CRU2f may accommodate the second deposition material DM2.

[0137] The first crucible CRU1f and the second crucible CRU2f may be arranged along the second direction DR2. Each of the first crucible CRU1f and the second crucible CRU2f may extend in the first direction DR1.

[0138] The first frame F1f may include a partition wall W1f between the first crucible CRU1f and the second crucible CRU2f. The partition wall W1f may separate a lower space of the first crucible CRU1f from a lower space of the second crucible CRU2f.

[0139] A portion of the partition wall W1f of the first frame F1f located between the first crucible CRU1f and the second crucible CRU2f may contact the 2-1st frame F2s1f, and another portion of the partition wall W1f may contact the 2-2nd frame F2s2f. For example, a portion of the partition wall W1f may contact the partition wall W2s1f of the 2-1st frame F2s1f, and another portion of the partition wall W1f may contact the partition wall W2s2f of the 2-2nd frame F2s2f.

[0140] The partition wall W2s1f of the 2-1st frame F2s1f that contacts a portion of the partition wall W1f may be spaced apart from the partition wall W2s2f of the 2-2nd frame F2s2f that contacts another portion of the partition wall W1f. Fig.14 and Fig.15In the embodiment, even if the exhaust passage is not provided, the undesired deposition materials can be discharged through the space between the partition walls W1f, W2s1f and W2s2f. Accordingly, the deposition materials DM1 and DM2 can be prevented from mixing in the first crucible CRU1f or the second crucible CRU2f.

[0141] The deposition source according to the present invention can prevent deposition materials from being mixed inside.

[0142] In summarizing the detailed description, those skilled in the art will appreciate that many changes and modifications may be made to the embodiments without departing substantially from the principles, spirit and scope of the present disclosure. Therefore, the disclosed embodiments are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. A deposition source, characterized in that: The deposition source comprises: The first framework includes: The lower space of the first crucible, the lower space of the second crucible, and a first partition wall disposed between the lower space of the first crucible and the lower space of the second crucible; and The second framework includes: the upper space of the first crucible, the upper space of the second crucible, a first nozzle connected to the first crucible, a second nozzle connected to the second crucible, and a second partition wall disposed between the upper space of the first crucible and the upper space of the second crucible, wherein A discharge passage is provided between the first partition wall of the first frame and the second partition wall of the second frame, and The first partition wall of the first frame contacts the second partition wall of the second frame.

2. The deposition source according to claim 1, characterized in that: The first nozzle and the second nozzle are arranged along a first direction.

3. The deposition source according to claim 2, characterized in that: The exhaust passage extends in the first direction.

4. The deposition source according to claim 2 or 3, characterized in that: The first crucible and the second crucible are arranged along a second direction intersecting the first direction.

5. The deposition source according to claim 4, characterized in that: Each of the first crucible and the second crucible extends in the first direction.

6. The deposition source according to claim 1, characterized in that: The deposition source further comprises: A fastening member passes through the discharge passage and fastens the first partition wall and the second partition wall.

7. The deposition source according to claim 6, characterized in that: The fastening member is a bolt.

8. The deposition source according to claim 1, characterized in that: The lower portion of the discharge passage is formed as a part of the first partition wall, and An upper portion of the discharge passage is formed as a portion of the second partition wall.

9. The deposition source according to claim 8, characterized in that: The upper portion of the discharge passage is formed as a groove of the second partition wall, and the lower portion of the discharge passage is formed as a flat surface of the first partition wall.

10. The deposition source according to claim 8, characterized in that: The upper portion of the discharge passage is formed as a flat surface of the second partition wall, and the lower portion of the discharge passage is formed as a groove of the first partition wall.

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