Gallium oxide photoelectric detector

Abstract

The utility model provides a gallium oxide photoelectric detector, which comprises a gallium oxide functional structure, a bearing base, a packaging shell and conductive pins, the packaging shell is arranged on the bearing base, the packaging shell and the bearing base form an assembly with a closed space inside, the gallium oxide functional structure comprises a gallium oxide material layer, and the conductive pins are arranged on the gallium oxide material layer. The gallium oxide functional structure is arranged on the bearing base and located in the closed space, the conductive pins are arranged outside the closed space, and the gallium oxide material layer is electrically connected to the conductive pins. In the gallium oxide photoelectric detector, the gallium oxide material layer is arranged in the closed space, so that the gallium oxide material layer can be prevented from being interfered by the external environment in the use process, and the stable performance and the long service life of the gallium oxide photoelectric detector are ensured. And through the conductive pins electrically connected with the gallium oxide material layer, the gallium oxide material layer can be conveniently integrated with a rear-end electronic processing system, so that amplification and reading of optical detection signals are realized, and ultraviolet light can be effectively monitored.

Description

Technical Field

[0001] The utility model relates to the technical field of photoelectric detection, in particular to a gallium oxide photoelectric detector. Background Art

[0002] Ultraviolet detectors are widely used in fire warning, ultraviolet disinfection, ozone monitoring, ultraviolet light curing, high-voltage power line corona monitoring and other fields. Traditional semiconductor ultraviolet detectors are mostly based on wide-bandgap semiconductor crystal materials, such as silicon carbide and gallium nitride. However, the preparation process of this semiconductor crystal material requires high-temperature growth and the preparation process is relatively complex and costly. In comparison, the preparation process of gallium oxide materials is relatively simple, and it also has high-gain ultraviolet response performance, and has good application prospects in the field of deep ultraviolet detection. However, the current research and application of gallium oxide materials is still basically in the laboratory stage, and has not undergone effective packaging treatment. Its performance and service life are greatly affected by the environment, making it difficult to use as a device for practical application. How to effectively package and process gallium oxide materials while ensuring the normal operation of gallium oxide materials has become an urgent problem to be solved. Utility Model Content

[0003] Based on this, in order to solve the problems in the background technology, it is necessary to provide a gallium oxide photoelectric detection device that effectively encapsulates the gallium oxide material to ensure that the oxidant material has stable performance and a long service life during detection.

[0004] According to some embodiments of the utility model, a gallium oxide photodetector is provided, which includes: a gallium oxide functional structure, a supporting base, a packaging shell and a conductive pin, wherein the packaging shell is arranged on the supporting base, and the packaging shell and the supporting base form a component having a closed space inside, the gallium oxide functional structure includes a gallium oxide material layer, the gallium oxide functional structure is arranged on the supporting base and is located in the closed space, the conductive pin is arranged outside the closed space, and the gallium oxide material layer is electrically connected to the conductive pin.

[0005] In some embodiments of the present invention, the packaging shell includes a packaging connector and a light-transmitting member, the packaging connector is connected to the supporting base and the light-transmitting member, and the light-transmitting member is spaced apart from the supporting base.

[0006] In some embodiments of the present invention, the packaging connector has a top opening and a bottom opening that are relatively arranged, the supporting base is connected to the bottom of the packaging connector and closes the bottom opening, and the light-transmitting member is connected to the top of the packaging connector and closes the top opening.

[0007] In some embodiments of the present invention, the gallium oxide material layer is disposed directly below the light-transmitting component.

[0008] In some embodiments of the present invention, the packaging connector is a tubular metal structure.

[0009] In some embodiments of the present invention, the light-transmitting member is a transparent plate made of quartz, glass, diamond, sapphire or calcium fluoride, and the light-transmitting member is planar or spherical.

[0010] In some embodiments of the present invention, the gallium oxide functional structure includes a substrate, a gallium oxide material layer and a plurality of electrical contacts, the substrate is disposed on the supporting base, the gallium oxide material layer is stacked on the substrate, the plurality of electrical contacts are spaced apart and electrically connected to the gallium oxide material layer, there are a plurality of conductive pins, and the plurality of electrical contacts are respectively electrically connected to the corresponding conductive pins.

[0011] In some embodiments of the present invention, the gallium oxide material layer includes a layer of gallium oxide thin film or multiple layers of gallium oxide thin films.

[0012] In some embodiments of the present invention, the gallium oxide material layer is made of amorphous gallium oxide.

[0013] In some embodiments of the present invention, the gallium oxide film has two layers, and the oxygen vacancy defect concentration in one layer of the gallium oxide film is higher than the oxygen vacancy defect concentration in the other layer of the gallium oxide film.

[0014] In some embodiments of the present invention, the thickness of the gallium oxide film is 10 nm to 1000 nm.

[0015] In some embodiments of the present invention, the enclosed space is in a vacuum state, or there is a protective gas in the enclosed space.

[0016] The gallium oxide photodetector of the utility model includes a gallium oxide functional structure, a bearing base, a packaging shell and a conductive pin, wherein the bearing base and the packaging shell are used to form a closed space inside. The gallium oxide functional structure is arranged on the bearing base and is located in the closed space, and the gallium oxide material layer therein is electrically connected to the conductive pin. In the gallium oxide photodetector, the gallium oxide material layer is arranged in the closed space, which can ensure that the gallium oxide material layer is protected from external environmental interference during use, thereby ensuring its stable performance and long service life. And through the conductive pins electrically connected to the gallium oxide material layer, it is also convenient to integrate with the back-end electronic processing system, so as to realize the amplification and reading of the light detection signal, and can effectively monitor the ultraviolet light. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the structure of a gallium oxide photodetector;

[0018] Figure 2 for Figure 1 A schematic diagram of the structure of a gallium oxide photodetector without the packaging shell;

[0019] Figure 3 for Figure 1 A schematic diagram of the structure of the package connector;

[0020] Figure 4 for Figure 2 Schematic diagram of the functional structure of gallium oxide in;

[0021] Figure 5 The spectral characteristics test results of gallium oxide photodetector.

[0022] The reference numerals and their meanings are as follows:

[0023] 110, supporting base; 120, packaging shell; 121, packaging connector; 1211, top opening; 1212, bottom opening; 122, light-transmitting member; 130, conductive pin; 140, conductive lead; 200, gallium oxide functional structure; 210, gallium oxide material layer; 220, substrate; 221, first contact portion; 222, second contact portion. DETAILED DESCRIPTION

[0024] In order to facilitate the understanding of the present invention, the present invention will be described more comprehensively in combination with the embodiments and the effect diagrams. The embodiments provide preferred embodiments of the present invention. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0025] It should be noted that when an element is referred to as being "fixed" to another element, it may be directly fixed to the other element, or it may be fixed to the other element through an intermediate element. When an element is considered to be "connected" to another element, it may be directly connected to the other element, or there may be an intermediate element between the two elements. In addition, in the description of the present utility model, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integrated connection. For example, it may be a mechanical connection or an electrical connection. For example, it may be a direct connection, an indirect connection through an intermediate element, or the internal connection of the two elements. It should be understood that those skilled in the art can understand the specific meanings of the above terms according to the specific circumstances without causing ambiguity.

[0026] Unless otherwise specified, in the description of the present invention, terms indicating orientation or positional relationship, such as "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", and "outside", are based on the orientation or positional relationship shown in the drawings of the utility model. They are only for the convenience and simplification of the description of the content of the utility model and to help readers understand the description in conjunction with the drawings. They do not limit or imply a specific orientation that the device or element referred to must have, and therefore should not be understood as a limitation on the present invention.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by technicians in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the implementation of the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items. "Multiple" herein includes a combination of two or more than two items.

[0028] The utility model provides a gallium oxide photodetector, which includes: a gallium oxide functional structure, a supporting base, a packaging shell and a conductive pin. The packaging shell is arranged on the supporting base, and the packaging shell and the supporting base form a component with a closed space inside. The gallium oxide functional structure includes a gallium oxide material layer, and the gallium oxide functional structure is arranged on the supporting base and is located in the closed space. The conductive pin is arranged outside the closed space, and the gallium oxide material layer is electrically connected to the conductive pin.

[0029] The gallium oxide photodetector of the utility model includes a gallium oxide functional structure, a bearing base, a packaging shell and a conductive pin, wherein the bearing base and the packaging shell are used to form a closed space inside. The gallium oxide functional structure is arranged on the bearing base and is located in the closed space, and the gallium oxide material layer therein is electrically connected to the conductive pin. In the gallium oxide photodetector, the gallium oxide material layer is arranged in the closed space, which can ensure that the gallium oxide material layer is protected from external environmental interference during use, thereby ensuring its stable performance and long service life. And through the conductive pins electrically connected to the gallium oxide material layer, it is also convenient to integrate with the back-end electronic processing system, so as to realize the amplification and reading of the light detection signal, and can effectively monitor the ultraviolet light.

[0030] Figure 1 Schematic diagram of the structure of a gallium oxide photodetector according to the utility model. Figure 1As shown, the gallium oxide photodetector includes: a supporting base 110, a packaging shell 120 and a conductive pin 130. The packaging shell 120 is disposed on the supporting base 110, and the packaging shell 120 and the supporting base 110 form a component with a closed space inside, and the conductive pin 130 is disposed outside the closed space. Figure 1 In the orientation shown, the packaging shell 120 can be disposed on the supporting base 110 , and the conductive pins 130 can be disposed under the supporting base 110 .

[0031] It is understandable that Figure 1 In the gallium oxide photodetector shown, the supporting base 110, the packaging shell 120 and the conductive pin 130 can form a structure such as a TO tube, and the gallium oxide functional structure 200 can be packaged in the TO tube. Further, the specifications of the TO tube can be designed with reference to the common specifications of TO18, TO39, TO46, TO56, TO8, TO9 and TO10.

[0032] Figure 2 for Figure 1 A schematic diagram of the structure of the gallium oxide photodetector without the packaging shell 120. Figure 2 As shown, the gallium oxide photodetector further includes a gallium oxide functional structure 200 disposed on the supporting base 110, the gallium oxide functional structure 200 includes a gallium oxide material layer 210, the gallium oxide material layer 210 is disposed on the supporting base 110 and is located in a closed space, and the gallium oxide material layer 210 is electrically connected to the conductive pin 130. Further, the gallium oxide material layer 210 can be electrically connected to the conductive pin 130 through a conductive lead 140.

[0033] Reference Figure 1 As shown, in some examples of this embodiment, the package shell 120 includes a package connector 121 and a light-transmitting member 122, the package connector 121 is connected to the supporting base 110 and the light-transmitting member 122, and the light-transmitting member 122 is spaced apart from the supporting base 110. It can be understood that the light-transmitting member 122 should have a certain transmittance for ultraviolet rays to ensure that the gallium oxide material layer 210 has a high sensitivity when detecting ultraviolet rays.

[0034] Figure 3 for Figure 1 Schematic diagram of the structure of the package connector 121. Figure 1 and Figure 3As shown, in some examples of this embodiment, the package connector 121 has a top opening 1211 and a bottom opening that are arranged opposite to each other, the supporting base 110 is connected to the bottom of the package connector 121 and closes the bottom opening, and the light-transmitting member 122 is connected to the top of the package connector 121 and closes the top opening 1211. It can be understood that in actual use, ultraviolet rays can be irradiated onto the gallium oxide material layer 210 in the enclosed space through the light-transmitting member 122 located at the top.

[0035] Combination Figure 1 and Figure 3 As shown, in some examples of this embodiment, the outer edge of the bottom end of the packaging connector 121 is located within the edge of the supporting base 110. Further, the outer edge of the supporting base 110 is circular, and the outer edge of the bottom end of the packaging connector 121 can also be circular.

[0036] Combination Figure 1 and Figure 2 As shown, in some examples of this embodiment, the gallium oxide material layer 210 is disposed directly below the light-transmitting member 122. The gallium oxide material layer 210 is disposed directly below the light-transmitting member 122 so that the gallium oxide material layer 210 is exposed to more ultraviolet rays, which can further improve the detection sensitivity of the gallium oxide photodetector.

[0037] In some examples of this embodiment, the packaging connector 121 is a tubular metal structure.

[0038] In some examples of this embodiment, the light-transmitting member 122 is a transparent plate made of quartz, glass, diamond, sapphire or calcium fluoride.

[0039] In some examples of this embodiment, the light-transmitting element 122 is planar or spherical.

[0040] Figure 4 for Figure 2 Schematic diagram of the structure of the gallium oxide functional structure 200. Figure 4 As shown, in some examples of this embodiment, the gallium oxide functional structure 200 may include a substrate 220, a gallium oxide material layer 210, and a plurality of electrical contacts, wherein the gallium oxide material layer 210 may be stacked on the substrate 220, and the plurality of electrical contacts may be spaced and electrically connected to the gallium oxide material layer 210, respectively. Figure 2 and Figure 4As shown, there may be multiple conductive pins 130, and multiple electrical contacts are electrically connected to corresponding conductive pins 130. It can be understood that the number of electrical contacts corresponds to the actual structure of the gallium oxide functional structure 200. For example, if the gallium oxide functional structure 200 is a two-terminal device, the number of electrical contacts may be two, and the number of conductive pins 130 may also be two accordingly. If the gallium oxide functional structure 200 is a three-terminal device, the number of electrical contacts may be three, and the number of conductive pins 130 may also be three accordingly.

[0041] Reference Figure 4 As shown, in some examples of this embodiment, there are two electrical contacts, including a first contact portion 221 and a second contact portion 222, respectively. The first contact portion 221 and the second contact portion 222 are electrically connected to the gallium oxide material layer 210, and the first contact portion 221 and the second contact portion 222 are arranged at intervals. It can be understood that in other examples, the number of electrical contacts can also be three.

[0042] In some examples of this embodiment, the electrical contact portion may be disposed in contact with the gallium oxide material layer 210. Further, the electrical contact portion may be disposed on a side of the gallium oxide material layer 210 away from the substrate 220, may be disposed between the gallium oxide material layer 210 and the substrate 220, or may be stacked on the substrate 220 and located on the side of the gallium oxide material layer 210.

[0043] In some examples of this embodiment, the material of the electrical contact may be selected from metal materials, wherein the metal material may include one or more of gold, copper, aluminum and molybdenum. The materials of the plurality of electrical contacts may be the same, or the materials of the plurality of electrical contacts may be different.

[0044] In some examples of this embodiment, the substrate 220 may be a base plate for preparing the gallium oxide material layer 210. Further, the material of the substrate 220 may be selected from one of quartz glass, silicon wafer, sapphire, plastic and fiber.

[0045] In some examples of this embodiment, the gallium oxide material layer 210 has a photosensitive function. Further, the material of the gallium oxide material layer 210 can be a single crystal gallium oxide material, a polycrystalline gallium oxide material or an amorphous gallium oxide material.

[0046] In some examples of this embodiment, the gallium oxide material layer 210 includes a layer of gallium oxide film or multiple layers of gallium oxide films. For example, the gallium oxide material layer 210 may be composed of a layer of gallium oxide film or two layers of gallium oxide films stacked together. Further, the gallium oxide film may be prepared on the substrate 220 by magnetron sputtering, metal organic chemical vapor deposition, molecular beam epitaxy, or electron beam epitaxy.

[0047] As one example, the gallium oxide material layer 210 is composed of a gallium oxide film. Further, the thickness of the gallium oxide film is 10nm to 1000nm. For example, the thickness of the gallium oxide film can be 10nm, 50nm, 100nm, 200nm, 300nm, 500nm, 700nm, 900nm, 1000nm, or the thickness of the gallium oxide film can also be in the range between any two of the above thicknesses.

[0048] As one example, the gallium oxide material layer 210 is composed of two stacked gallium oxide films, and the concentration of oxygen vacancy defects in one gallium oxide film is higher than that in the other gallium oxide film. It can be understood that the concentration of oxygen vacancy defects is directly related to the carrier mobility and resistance of the gallium oxide film. When the concentration of oxygen vacancy defects is high, the carrier mobility of the gallium oxide film is also high, and the resistance is relatively low.

[0049] In some examples of this embodiment, the enclosed space is in a vacuum state, or there is a protective gas in the enclosed space. By evacuating the enclosed space or filling the enclosed space with a protective gas, the gallium oxide functional structure 200 in the enclosed space can be effectively protected, thereby extending the service life of the gallium oxide functional structure 200.

[0050] The gallium oxide photodetector in the utility model includes a gallium oxide material layer 210, a supporting base 110, a packaging shell 120 and a conductive pin 130, wherein the supporting base 110 and the packaging shell 120 are used to form a closed space inside. The gallium oxide material layer 210 is arranged on the supporting base 110 and is located in the closed space, and the gallium oxide material layer 210 is electrically connected to the conductive pin 130. In the gallium oxide photodetector, the gallium oxide material layer 210 is arranged in the closed space, which can ensure that the gallium oxide material layer 210 is free from external environmental interference during use, thereby ensuring its stable performance and long service life. And through the conductive pin 130 electrically connected to the gallium oxide material layer 210, it is also convenient to integrate with the back-end electronic processing system, so as to realize the amplification and reading of the light detection signal, and can effectively monitor the ultraviolet light.

[0051] Use Figure 1 The structure of the gallium oxide photodetector shown in the figure has conventional characteristics and a package size of 53 mm. 2 , the dark current is 2pA, the operating voltage is 50V, and the rise time (t R ) is 7s, the fall time (t d ) is 0.05s. In terms of maximum rated parameters, its welding temperature can reach 350℃ and the maximum voltage can reach 145V.

[0052] The actual test of the spectral characteristics of the gallium oxide photodetector yielded the following results: Figure 5 The results are shown. Figure 5 As shown in Figure 2, the spectral response range of the detector is 205nm~315nm, the wavelength of its response peak is 250nm, and the highest responsivity reaches 2.4×10 3 A / W, and its UV / visible suppression ratio can reach 3.1×10 6 , which means that using Figure 1 The structure of the gallium oxide photodetector shown can effectively ensure that the gallium oxide functional structure has good spectral characteristics, thereby ensuring that the detector can work normally.

[0053] Furthermore, the gallium oxide photodetector was placed in an environment with a temperature of 100°C and a humidity of 90% for 6 days and then taken out. At this time, the dark current of the detector was 1pA, and the rise time (t R ) is 7.7s, the fall time (t d ) is 0.05s. The spectral response range of the detector after placement is 200nm~400nm, the wavelength of its response peak is 235nm, and the highest responsivity reaches 9.5×10 3 A / W, and its UV / visible suppression ratio can reach 1.1×10 3 The test results show that the gallium oxide photodetector can still maintain a high spectral response performance after being treated in an extremely harsh environment, and also show that the packaging method can ensure the long-term service life of the gallium oxide photodetector in harsh environments.

[0054] The utility model uses a closed space formed by a bearing base and a packaging shell to encapsulate the gallium oxide functional structure, wherein the conductive pins are conveniently welded to the back-end circuit. Moreover, the bearing base and the packaging shell with good airtightness can greatly improve the service life of the gallium oxide functional structure, especially in a high temperature and high humidity working environment. In addition, the design of the light-transmitting member can ensure that the gallium oxide functional structure effectively receives incident light, and further designing the light-transmitting member into a spherical shape can also achieve effective convergence of the incident light, thereby further improving the sensitivity of the device.

[0055] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0056] The above embodiments only express several implementation methods of the utility model, and the descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A gallium oxide photodetector, characterized in that: include: A gallium oxide functional structure, a supporting base, a packaging shell and a conductive pin, wherein the packaging shell is arranged on the supporting base, and the packaging shell and the supporting base form a component with a closed space inside, the gallium oxide functional structure includes a gallium oxide material layer, the gallium oxide functional structure is arranged on the supporting base and is located in the closed space, the conductive pin is arranged outside the closed space, and the gallium oxide material layer is electrically connected to the conductive pin.

2. The gallium oxide photodetector according to claim 1, characterized in that: The packaging shell includes a packaging connector and a light-transmitting member, the packaging connector is connected to the bearing base and the light-transmitting member, and the light-transmitting member is spaced apart from the bearing base.

3. The gallium oxide photodetector according to claim 2, characterized in that: The packaging connector has a top opening and a bottom opening that are arranged opposite to each other. The supporting base is connected to the bottom of the packaging connector and closes the bottom opening. The light-transmitting member is connected to the top of the packaging connector and closes the top opening.

4. The gallium oxide photodetector according to claim 3, characterized in that: The gallium oxide material layer is arranged directly below the light-transmitting component.

5. The gallium oxide photodetector according to claim 3, characterized in that: The packaging connector is a tubular metal structure; and / or, The light-transmitting member is a transparent plate made of quartz, glass, diamond, sapphire or calcium fluoride, and the light-transmitting member is in a plane shape or a spherical shape.

6. The gallium oxide photodetector according to any one of claims 1 to 5, characterized in that: The gallium oxide functional structure includes a substrate, a gallium oxide material layer and a plurality of electrical contacts, wherein the substrate is disposed on the supporting base, the gallium oxide material layer is stacked on the substrate, the plurality of electrical contacts are spaced apart and electrically connected to the gallium oxide material layer, and there are a plurality of conductive pins, and the plurality of electrical contacts are respectively electrically connected to corresponding conductive pins.

7. The gallium oxide photodetector according to claim 6, characterized in that: The gallium oxide material layer includes a layer of gallium oxide film or multiple layers of gallium oxide films; and / or, The gallium oxide material layer is made of amorphous gallium oxide.

8. The gallium oxide photodetector according to claim 7, characterized in that: The electrical contacts are two or three.

9. The gallium oxide photodetector according to claim 7 or 8, characterized in that: The gallium oxide film has a thickness of 10 nm to 1000 nm.

10. The gallium oxide photodetector according to any one of claims 1 to 5 and 7 to 8, characterized in that: The enclosed space is in a vacuum state, or there is a protective gas in the enclosed space.

Images