Wafer processing system and semiconductor structure

Abstract

The embodiment of the utility model provides a wafer processing system and a semiconductor structure. Wherein a bonding adhesive film and a cutting adhesive film are sequentially attached to the surface of the wafer, and the wafer comprises a plurality of crystal grains. The wafer processing system comprises: a base; the film expanding unit is connected to the base and is suitable for expanding the bonding adhesive film and the cutting adhesive film so as to form a cutting channel between the adjacent crystal grains; and the cutting unit is connected to the base and is suitable for cutting the adhesive film through the cutting channel.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a wafer processing system and a semiconductor structure. Background Art

[0002] In the back-end process of semiconductor manufacturing, wafer processing equipment continues to face challenges as the thickness of wafers and the films attached to their surfaces continues to increase. Utility Model Content

[0003] The present application provides a wafer processing system and a semiconductor structure that can at least partially solve the above-mentioned problems or other problems in the art.

[0004] In a first aspect, some embodiments of the present application provide a wafer processing system. The surface of the wafer is sequentially attached with an adhesive film and a cutting film, and includes a plurality of crystal grains. The wafer processing system includes: a base; a film expansion unit connected to the base, suitable for expanding the adhesive film and the cutting film to form a cutting path between adjacent crystal grains; and a cutting unit connected to the base, suitable for cutting the adhesive film through the cutting path.

[0005] In an exemplary embodiment, the wafer processing system further includes: a fixing ring having a contact portion that contacts the dicing film.

[0006] In an exemplary embodiment, the wafer processing system further includes: a heater connected to the susceptor to heat the dicing film after the dicing streets are formed.

[0007] In an exemplary embodiment, the wafer processing system further includes a pick-and-place unit connected to the base, which places the fixing ring after the scribe line is formed.

[0008] In an exemplary embodiment, the film expanding unit, the cutting unit, and the placing and picking unit are connected to the same base.

[0009] In an exemplary embodiment, the base includes a first base and a second base, the film expanding unit and the placing and taking unit are connected to the first base, the cutting unit is connected to the second base, and the first base is different from the second base.

[0010] In an exemplary embodiment, the film expanding unit, the cutting unit and the heater are connected to the same base.

[0011] In an exemplary embodiment, the base includes a first base and a second base, the film expanding unit and the cutting unit are connected to the first base, the heater is connected to the second base, and the first base is different from the second base.

[0012] In an exemplary embodiment, the cutting unit includes a first laser that emits a first laser beam to a cutting street.

[0013] In an exemplary embodiment, the base contacts a first surface of the dicing film, and the film expanding unit is movable in a direction perpendicular to the first surface.

[0014] In an exemplary embodiment, the film expanding unit includes: a vacuum platform in contact with the first surface of the cut adhesive film.

[0015] In an exemplary embodiment, the wafer processing system also includes: a second laser connected to the base, emitting a second laser beam into the interior of the wafer to form a preset dividing line; and a grinding mechanism connected to the base, thinning the wafer and dividing the wafer into a plurality of grains in contact with each other along the preset dividing line.

[0016] In a second aspect, some embodiments of the present application provide a semiconductor structure, which includes: a crystal grain; and an adhesive film attached to one side of the crystal grain; wherein the thickness of the adhesive film is 50 μm to 130 μm.

[0017] In an exemplary embodiment, the die includes a metal layer, and the metal layer is remote from the bonding film. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Other features, purposes and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings, in which:

[0019] Figures 1A to 1C It is a structural schematic diagram of a first base and a film expansion unit in a wafer processing system provided in an embodiment of the present application;

[0020] Figure 2 It is a structural schematic diagram of a second base and a cutting unit in a wafer processing system provided in an embodiment of the present application;

[0021] Figure 3 It is a structural schematic diagram of a pick-and-place unit in a wafer processing system provided in an embodiment of the present application;

[0022] Figure 4 is a schematic diagram of the structure of a heater in a wafer processing system provided in an embodiment of the present application;

[0023] FIG. 5A to FIG. 5F is a schematic structural diagram of a second laser and a grinding mechanism in a wafer processing system provided in an embodiment of the present application;

[0024] FIG. 6A to FIG. 6C is a schematic structural diagram of a base, a film expansion unit, and a cutting unit in a wafer processing system provided by another embodiment of the present application; and

[0025] Figure 7 It is a schematic diagram of a semiconductor structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0026] In order to better understand the present application, a more detailed description will be made of various aspects of the present application with reference to the accompanying drawings. It should be understood that these detailed descriptions are only descriptions of exemplary embodiments of the present application, and are not intended to limit the scope of the present application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0027] It should be noted that in this specification, the expressions first, second, third, etc. are only used to distinguish one feature from another feature, and do not represent any limitation on the features, especially do not represent any order of precedence. Therefore, without departing from the teaching of this application, the first base discussed in this application may also be referred to as the second base, and vice versa.

[0028] In the drawings, the thickness, size and shape of the components have been slightly adjusted for ease of illustration. The drawings are for illustration only and are not drawn strictly to scale. As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation, not as terms of degree, and are intended to account for the inherent deviations in measurements or calculations that would be recognized by one of ordinary skill in the art.

[0029] It should also be understood that expressions such as "include", "including", "have", "contain" and / or "comprising" are open rather than closed expressions in this specification, which indicate the presence of the stated features, elements and / or components, but do not exclude the presence of one or more other features, elements, components and / or combinations thereof. In addition, when expressions such as "at least one of..." appear after a list of listed features, they modify the entire list of features rather than just the individual elements in the list. In addition, when describing embodiments of the present application, "may" is used to mean "one or more embodiments of the present application". And, the term "exemplary" is intended to refer to an example or illustration.

[0030] Unless otherwise specified, all words (including engineering terms and scientific and technological terms) used in this article have the same meaning as those commonly understood by ordinary technicians in the field to which this application belongs. It should also be understood that, unless clearly stated in this application, words defined in common dictionaries should be interpreted as having the same meaning as their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal sense.

[0031] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments in this application can be combined with each other. In addition, unless explicitly limited or contradictory to the context, the specific steps included in the method recorded in this application are not necessarily limited to the recorded order, but can be performed in any order or in parallel.

[0032] In addition, in the present application, when “connected” or “coupled” is used, it may indicate direct contact or indirect contact between corresponding components, unless otherwise clearly defined or inferred from the context.

[0033] The present application will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0034] When the thickness of the adhesive film attached to the surface of the wafer is relatively large, it is difficult for a single wafer processing device to completely cut the adhesive film, causing the grains to stick together.

[0035] In view of this, some embodiments of the present application provide a wafer processing system. Figures 1A to 1C It is a structural schematic diagram of the first base and the film expansion unit in the wafer processing system provided in an embodiment of the present application. Figure 2 It is a schematic diagram of the structure of the second base and the cutting unit in the wafer processing system provided in an embodiment of the present application.

[0036] like Figures 1A to 1C as well as Figure 2 As shown, the wafer processing system 100 can be used to process the wafer 10. The surface of the wafer 10 can be sequentially attached with an adhesive film 12 and a cutting film 13, and the wafer 10 can include a plurality of dies 11. The wafer processing system 100 may include a first base 111, a second base 112, a film expansion unit 113, and a cutting unit 114. The film expansion unit 113 is connected to the first base 111, and is suitable for expanding the adhesive film 12 and the cutting film 13 to form a cutting road 14 between adjacent dies 11. The cutting unit 114 is connected to the second base 112, and is suitable for cutting the adhesive film 12 via the cutting road 14.

[0037] According to the wafer processing system provided by the above embodiment, the film expansion unit is used to expand the adhesive film and the cutting film to form a cutting path that exposes the separated grains and the adhesive film between the grains, and the cutting unit is used to cut the adhesive film through the cutting path to ensure the complete cutting of the adhesive film and prevent the grains from sticking together, which can improve the problem of incomplete separation of the adhesive film with a large thickness. At the same time, the wafer processing system has a simple structure, which is conducive to improving the utilization rate of each component.

[0038] In some embodiments, Figure 1A As shown, the wafer 10 has been processed by a semiconductor front-end process, and the grains 11 in the wafer 10 can realize a preset circuit function. The semiconductor front-end process includes but is not limited to doping, photolithography, etching, thin film deposition, oxidation, and epitaxial growth. For example, the grains 11 in the wafer 10 may include NAND memory, DRAM memory, new memory, peripheral circuits, and any combination thereof.

[0039] In some embodiments, continue to refer to Figure 1A , multiple grains 11 are in contact with each other. Adjacent grains 11 are closely arranged and have no spacing. For example, multiple grains 11 in the wafer 10 have been subjected to Stealth Dicing Before Grinding (SDBG) processing using the second laser and grinding mechanism in the wafer processing system 100. The second laser and grinding mechanism will be described below by way of example.

[0040] In some embodiments, the adhesive film 12 may be attached to the surface of the wafer 10. The adhesive film 12 may be referred to as a DAF film (die attach film), and is used, for example, to achieve fixed bonding between dies and between dies and substrates. The adhesive film 12 has the characteristics of good insulation and strong adhesion. The thickness of the adhesive film 12 may be 50 μm to 130 μm, for example, 60 μm or 120 μm. When the adhesive film 12 has the above thickness, it may be used to achieve FOW (file on wire) packaging or FOD (file on die) packaging.

[0041] In some embodiments, the dicing film 13 may be attached to the surface of the adhesive film 12 facing away from the wafer 10. The dicing film 13 may be used to prevent the displacement of the die during the dicing process, ensure the accuracy of the cutting depth and thickness, and inhibit the wafer from cracking and scattering. The dicing film 13 has the characteristics of high viscosity before UV and low viscosity after UV, easy peeling, corrosion resistance, and no residue after peeling.

[0042] In some embodiments, the area of ​​the adhesive film 12 may be substantially the same as the area of ​​the wafer 10, the area of ​​the dicing film 13 may be larger than the area of ​​the wafer 10, and the adhesive film 12 and the wafer 10 are located in the middle of the dicing film 13. In other embodiments, the area of ​​the adhesive film 12 may be larger than the area of ​​the wafer 10 and substantially the same as the area of ​​the dicing film 13 (not shown).

[0043] In some embodiments, the periphery of the dicing film 13 may be connected to the wafer frame 15. For example, the wafer frame 15 is located on the surface of the dicing film 13 facing the wafer 10. The wafer frame 15 may be an annular structure and is used to provide support for the wafer 10 to be transported and transferred.

[0044] In some embodiments, continue to refer to Figure 1A, the first base 111 may be a barrel-shaped base, and its upper surface may serve as a first bearing surface 1111. The first bearing surface 1111 may be used to bear the cutting film 13 and contact the first surface 16 of the cutting film 13. In other words, the periphery of the cutting film 13 is clamped between the first bearing surface 1111 of the first base 111 and the wafer frame 15. Optionally, the wafer processing system 100 may further include a fixing fixture (not shown). For example, the fixing fixture may be distributed on the periphery of the upper end of the first base 111, and is used to engage with the wafer frame 15 to keep the wafer 10 in a fixed position relative to the first base 111.

[0045] It should be noted that the terms such as "upper" and "lower" described in this application to indicate orientation and positional relationships are based on the orientation and positional relationships shown in the accompanying drawings and are only for the purpose of convenience and simplification of description, rather than indicating that each unit, mechanism or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on this application.

[0046] In some embodiments, continue to refer to Figure 1A The film expansion unit 113 may be located inside the barrel-shaped first base 111. The film expansion unit 113 may have a first holding surface 1131. The first holding surface 1131 may contact the first surface 16 of the dicing film 13 corresponding to the region of the wafer 10. For example, the film expansion unit 113 may be movable along a D1 direction perpendicular to the first surface 16.

[0047] In some embodiments, the wafer processing system 100 may further include a rotating roller 117. The rotating roller 117 may be disposed on the outer periphery of the upper end of the film expansion unit 113. Figure 1A As shown, the upper surface of the rotating roller 117 is substantially flush with the first retaining surface 1131 .

[0048] In some embodiments, Figure 1B As shown, the wafer processing system 100 may further include a fixing ring 115. The fixing ring 115 may have a contact portion that contacts the dicing film 13. For example, the fixing ring 115 may be an annular structure, and the diameter of its inner ring surface is greater than the diameter of the wafer 10, and the fixing ring 115 may be sleeved on the outer circumference of the wafer 10.

[0049] In some embodiments, the wafer processing system 100 may further include a pick and place unit. Figure 3 1 is a schematic diagram of the structure of the pick-and-place unit 118 in the wafer processing system 100 provided in the embodiment of the present application. Figure 3As shown, the pick-and-place unit 118 may be connected to the first base 111, and is used to place the fixing ring 115 on the surface of the dicing film 13 on the periphery of the wafer 10 away from the first holding surface 1131 after forming the dicing street 14, so that the contact portion of the fixing ring 115 contacts the surface of the dicing film 13 away from the first holding surface 1131. For example, the pick-and-place unit 118 may include a robot arm.

[0050] In some embodiments, the process of the film expansion unit 113 expanding the bonding film 12 and the cutting film 13 to form the cutting road 14 between the adjacent dies 11 is as follows: Figure 1A As shown, the film expansion unit 113 can be moved along the direction D1 to a position where its first holding surface 1131 is substantially flush with the first carrying surface 1111 of the first base 111. The wafer 10 with the adhesive film 12 and the dicing film 13 attached thereto is placed on the first carrying surface 1111 with the aid of the wafer frame 15, and the wafer 10 is kept above the first holding surface 1131 of the film expansion unit 113. Next, as shown in FIG. Figure 1B As shown, the film expansion unit 113 can move along the direction D1 so that its first holding surface 1131 is higher than the first bearing surface 1111 of the first base 111. As a result, the dicing film 13 and the bonding film 12 are expanded, and the plurality of dies 11 are separated from each other. There is a spacing distance between adjacent dies 11 and a dicing street 14 is formed. Optionally, the wafer processing system 100 includes a fixing ring 115 and a pick-and-place unit 118 (refer to Figure 3 ), after forming the cutting road 14, the film expansion unit 113 can be kept in the position in the D1 direction, and the placement unit 118 (refer to Figure 3 ) A fixing ring 115 is placed to maintain the expansion state of the cutting film 13 and the width of the cutting path 14. Optionally, as Figure 1C As shown, the film expansion unit 113 can move along the D1 direction to a position where its first holding surface 1131 is substantially flush with the first bearing surface 1111 of the first base 111, and under the action of the fixing ring 115, the expansion state of the cutting film 13 and the width of the cutting path 14 can still be maintained. The cutting film 13 forms wrinkles around the outer periphery of the fixing ring 115.

[0051] In some embodiments, Figure 2 As shown, the cutting unit 114 may be located above the second base 112 . The cutting unit 114 may include a first laser 114 (hereinafter, the first laser and the cutting unit use the same reference numerals). The first laser 114 may emit a first laser beam to the cutting street 14 .

[0052] In some embodiments, continue to refer to Figure 2, the process of the first laser 114 cutting the adhesive film 12 via the cutting path 14 is as follows: the first laser 114 moves along the cutting path 14 on a plane perpendicular to the D1 direction, and focuses the first laser beam it emits to the cutting path 14, and the first laser beam with pulse energy can cut the adhesive film 12 exposed to the cutting path 14, so that the die 11 and the adhesive film 12 are separated from each other as a whole. Optionally, in the process of the first laser 114 cutting the adhesive film 12, the first laser 114 also cuts a portion of the cutting film 13 located below the adhesive film 12.

[0053] It should be noted that the present application does not impose any specific restrictions on the specific type of the cutting unit. For example, the cutting unit may also include mechanical cutting components such as a grinding wheel.

[0054] In some embodiments, continue to refer to Figure 2 The wafer processing system 100 may further include a vacuum platform 116 in contact with the first surface 16 of the dicing film 13. For example, the vacuum platform 116 is disposed above the second base 112 and has a second holding surface 1161 facing away from the second base 112. The second holding surface 1161 may be in contact with the first surface 16 of the dicing film 13. For example, the vacuum platform 116 may have a vacuum pipe (not shown) inside, and the vacuum pipe may be connected to a vacuum pump. The vacuum platform 116 may be used to adsorb the dicing film 13 and the bonding film 12 and the plurality of dies 11 thereon to prevent the dies 11 from shifting.

[0055] In some embodiments, in the wafer processing system 100, as Figures 1A to 1C as well as Figure 3 As shown, the film expansion unit 113 and the pick-and-place unit 118 may be connected to the first base 111. For example, the first base 111 may have a plurality of processing stations, and the peripheries of the first base 111 located at different processing stations are connected to each other and may be an integral structure. The lifting platform 119 may drive the wafer 10 to move along the D1 direction, and the wafer 10 may be transferred at each processing station of the first base 111 to perform different processing (for example, film expansion processing and pick-and-place fixing ring). Figure 2 As shown, the cutting unit 114 is connected to the second base 112. The first base 111 is different from the second base 112. In this embodiment, compared with some film expansion equipment and laser cutting equipment, the cutting path can be fixed by simply adding a pick-and-place unit on the basis of the film expansion equipment, which has a low investment cost and is conducive to improving the utilization rate of the film expansion equipment and the laser cutting equipment.

[0056] In some embodiments, the wafer processing system 100 may further include a heater. Figure 4 Schematic diagram of the structure of the heater in the wafer processing system provided by the embodiment of the present application. Figure 4As shown, the heater 120 is connected to the first base 111 and is used to heat the dicing film 13 after the dicing road 14 is formed. For example, the wafer processing system 100 may also include a carrier 121 located inside the barrel-shaped first base 111. The carrier 121 may have a second carrier surface 1211. The first carrier surface 1111 of the first base 111 and the second carrier surface 1211 of the carrier 121 are substantially flush. The first base 111 and the carrier 121 are used together to carry the dicing film 13 and the adhesive film 12 and multiple dies 11 located above it. The carrier 121 can rotate around the D1 direction to drive the dicing film 13, the adhesive film 12 and the multiple dies 11 to rotate. The heater 120 can be located above the first base 111 and roughly aligned with the folds of the dicing film 13. The heater 120 can spray hot air to solidify the dicing film 13. In this embodiment, the dicing film is heated after the dicing road is formed, which can prevent the shrinkage of the dicing film from causing adjacent grains to approach each other and thus affecting the picking of the grains. In addition, the heater is connected to the first base, and the heaters in some film expansion equipment can be reused to improve equipment utilization.

[0057] In some embodiments, the number of heaters 120 may be one, and the rotation of the carrier 121 may be used to uniformly heat the dicing film 13. In other embodiments, the number of heaters 120 may be multiple (not shown), and the multiple heaters may be evenly distributed circumferentially to uniformly heat the dicing film 13.

[0058] In some embodiments, the film expansion unit, the cutting unit, and the pick-and-place unit may be connected to the same base (not shown). In this embodiment, compared with some film expansion equipment, the fixation of the cutting path and the cutting of the adhesive film can be achieved by adding a pick-and-place unit and a cutting unit on the basis of the film expansion equipment, which has a low investment cost and is conducive to improving the utilization rate of the film expansion equipment. At the same time, it is conducive to improving the integration of the wafer processing system.

[0059] In some embodiments, the wafer processing system 100 may also include a second laser and a grinding mechanism. FIG. 5A to FIG. 5F Schematic diagram of the structure of the second laser and the grinding mechanism in the wafer processing system provided by the embodiment of the present application. Figure 5C As shown, the second laser 122 may be connected to a base (not shown) and used to emit a second laser beam into the wafer 10 to form a preset dividing line 18. Figure 5B and Figure 5DAs shown, the grinding mechanism 123 can be connected to a base (not shown) and used to thin the wafer 10, and can also be used to divide the wafer 10 into a plurality of grains 11 that are in contact with each other along a preset dividing line 18. It should be noted that in some examples, the second laser 122 and the grinding mechanism 123 can be connected to the first base 111 or the second base 112 (refer to Figures 1A to 1C as well as Figure 2 In some other examples, the second laser 122 and the grinding mechanism 123 may be connected to a third base (not shown). The third base may be different from the first base 111 and the second base 112. For example, the second laser 122 and the grinding mechanism 123 may be used to perform a stealth cutting process on the wafer 10.

[0060] In some embodiments, the process of the second laser 122 and the grinding mechanism 123 performing invisible cutting on the wafer 10 is as follows: Figure 5A As shown, the wafer 10 has been processed by the semiconductor front-end process, and the protective film 17 can be attached to the front side of the wafer 10 to protect the front side of the wafer 10. For example, the front side of the wafer 10 can expose the metal layer 101 connected to the external device (refer to Figure 5C ), the back side of the wafer 10 may expose the substrate. Figure 5B As shown, the wafer 10 with the protective film 17 attached thereto can be turned over so that the back side of the wafer 10 faces the grinding mechanism 123. The grinding mechanism 123 can rotate and press the wafer 10 to thin the base of the wafer 10. Figure 5C As shown, from the back side of the wafer 10, the second laser 122 focuses the second laser beam it emits into the inside of the wafer 10 and moves horizontally. As a result, a modified layer is formed inside the wafer 10. The modified layer intermittently surrounds the grains to form a preset dividing line 18. Figure 5D As shown, after the preset dividing line 18 is formed, the grinding mechanism 123 can rotate and press the wafer 10 to thin the base of the wafer 10 to reach a preset thickness, and the wafer 10 is divided into a plurality of grains 11 contacting each other with the modified layer as a separation starting point under the grinding pressure. Figure 5E As shown, after forming a plurality of crystal grains 11 in contact with each other, the adhesive film 12 and the dicing film 13 in contact with each other can be attached to the back of the wafer 10. The adhesive film 12 is in direct contact with the wafer 10. Optionally, as Fig. 5F As shown, the wafer 10 with the adhesive film 12 and the dicing film 13 attached thereto can be turned over, and the protective film 17 can be peeled off, thereby obtaining a wafer 10 with the adhesive film 12 and the dicing film 13 attached thereto in sequence.

[0061] FIG. 6A to FIG. 6C1 is a schematic diagram of the structure of a base and a film expansion unit in a wafer processing system provided by another embodiment of the present application. For the purpose of concise description, the content that is the same as the previous embodiment is not described again in this application.

[0062] like FIG. 6A to FIG. 6C As shown, the wafer processing system 200 may include a base 224, a film expansion unit 213, and a cutting unit 214. The film expansion unit 213 is connected to the base 224 and is suitable for expanding the adhesive film 12 and the cutting film 13 to form a cutting street 14 between adjacent dies 11. The cutting unit 214 is also connected to the base 224 and is suitable for cutting the adhesive film 12 through the cutting street 14.

[0063] In some embodiments, the base 224 may be a barrel-shaped base, and its upper surface may serve as the third bearing surface 2241. The film expansion unit 213 may be located inside the barrel-shaped base 224. The film expansion unit 213 is movable along a D1 direction perpendicular to the first surface 16.

[0064] In some embodiments, the wafer processing system 200 may further include a vacuum platform 216 in contact with the first surface 16 of the dicing film 13. For example, the vacuum platform 216 may be disposed above the film expansion unit 213 and have a second holding surface 2161 facing away from the film expansion unit 213. The second holding surface 2161 may be in contact with the first surface 16 of the dicing film 13.

[0065] In some embodiments, the wafer processing system 200 may further include a rotating roller 217. The rotating roller 217 may be disposed on the periphery of the vacuum platform 216. Fig. 6A As shown, the upper surface of the rotating roller 217 may be substantially flush with the second retaining surface 2161 .

[0066] In some embodiments, the cutting unit 214 may include a first laser 214 (hereinafter, the first laser and the cutting unit use the same reference numerals). The first laser 214 may emit a first laser beam to the cutting street 14.

[0067] In some embodiments, the film expansion unit 213 expands the adhesive film 12 and the cutting film 13 to form a cutting path 14 between adjacent dies 11, and the first laser 214 cuts the adhesive film 12 through the cutting path 14 as follows: Fig. 6A As shown, the film expansion unit 213 can be moved along the direction D1 to a position where the second holding surface 2161 of the vacuum platform 216 is substantially flush with the third carrying surface 2241 of the base 224. The wafer 10 with the adhesive film 12 and the dicing film 13 attached thereto is placed on the third carrying surface 2241 with the aid of the wafer frame 15, and the wafer 10 is kept above the second holding surface 2161 of the vacuum platform 216. Next, as shown in FIG. Figure 6BAs shown, the film expansion unit 213 can move along the D1 direction to make the second holding surface 2161 of the vacuum platform 216 higher than the third bearing surface 2241 of the base 224. As a result, the dicing film 13 and the bonding film 12 are expanded, and the multiple dies 11 are separated from each other, and adjacent dies 11 have a spacing distance and form a dicing street 14. Figure 6C As shown, after the cutting road 14 is formed, the position of the film expansion unit 213 in the direction of D1 can be maintained, and the first laser 214 moves along the cutting road 14 in a plane perpendicular to the direction of D1, and focuses the first laser beam it emits onto the cutting road 14. The first laser beam with pulse energy can cut the adhesive film 12 exposed to the cutting road 14, so that the grain 11 and the adhesive film 12 are separated from each other as a whole.

[0068] In some embodiments, Figure 6C As shown, the wafer processing system 200 may further include a heater 220. The heater 220 may be connected to the base 224 and used to heat the dicing film 13 after the dicing street 14 is formed. For example, the heater 220 may be located above the base 224 and approximately aligned with the rotating roller 217. The heater 220 may spray hot air to solidify the dicing film 13. In this embodiment, heating the dicing film after the dicing street is formed can prevent adjacent grains from approaching each other due to the retraction of the dicing film, thereby affecting the expansion state of the dicing film and the width of the dicing street.

[0069] In some embodiments, the film expansion unit 213, the cutting unit 214 (for example, the first laser 214) and the heater 220 can be connected to the same base 224. In this embodiment, compared with some laser cutting equipment, the expansion of the cutting film and the fixing of the cutting path can be achieved by adding the film expansion unit 213 and the heater 220 on the basis of the laser cutting equipment, which has a low investment cost and is conducive to improving the utilization rate of the laser cutting equipment. At the same time, it is conducive to improving the integration of the wafer processing system.

[0070] In some embodiments, the base 224 may include a first base and a second base (not shown). The film expansion unit 213 and the cutting unit 214 may be connected to the first base, and the heater 220 may be connected to the second base. The first base is different from the second base. In this embodiment, the expansion of the cut film and the cutting of the adhesive film can be achieved by adding a film expansion unit on the basis of the laser cutting equipment, which has a low investment cost and is conducive to improving the utilization rate of the film expansion equipment. In addition, the heater in some film expansion equipment can be reused to improve the equipment utilization rate.

[0071] Some other embodiments of the present application further provide a semiconductor structure. Figure 7 Schematic diagram of the semiconductor structure provided by the embodiment of the present application. Figure 7As shown, the semiconductor structure 20 includes a die 11 and an adhesive film 12. The adhesive film 12 is attached to one side (eg, the surface) of the die 11. The thickness of the adhesive film 12 is 50 μm to 130 μm.

[0072] According to the semiconductor structure provided by the above embodiment, the die and the adhesive film are relatively independent as a whole structure, and are not adhered to the adjacent die and adhesive film. The cutting quality of the adhesive film is good, which is conducive to improving the qualified rate of the semiconductor structure. At the same time, the adhesive film with a thickness of 50μm to 130μm can realize FOW packaging or FOD packaging.

[0073] In some embodiments, the die 11 may include a metal layer 101, and the metal layer 101 is disposed away from the adhesive film 12. For example, the die 11 may also include a main structure 102. The main structure 102 may be located between the metal layer 101 and the adhesive film 12. For example, the main structure 102 may be used to provide a preset functional circuit, and the metal layer 101 may be used to provide a physical interface for connecting to an external device.

[0074] The above description is only an implementation method of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of protection involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the technical concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A wafer processing system, wherein: The surface of the wafer is sequentially attached with an adhesive film and a dicing film, and includes a plurality of crystal grains. The wafer processing system includes: Pedestal; a film expansion unit connected to the base, adapted to expand the bonding film and the cutting film to form cutting paths between adjacent dies; and The cutting unit is connected to the base and is suitable for cutting the adhesive film through the cutting path.

2. The wafer processing system according to claim 1, characterized in that: The wafer processing system further comprises: The fixing ring has a contact portion contacting the cutting film.

3. The wafer processing system according to claim 1, characterized in that: The wafer processing system further comprises: A heater is connected to the base and heats the cutting film after the cutting road is formed.

4. The wafer processing system according to claim 2, characterized in that: The wafer processing system further comprises: A pick-and-place unit is connected to the base and places the fixing ring after the cutting path is formed.

5. The wafer processing system according to claim 4, characterized in that: The film expanding unit, the cutting unit and the placing and taking unit are connected to the same base.

6. The wafer processing system according to claim 4, characterized in that: The base includes a first base and a second base, the film expansion unit and the placement unit are connected to the first base, the cutting unit is connected to the second base, and the first base is different from the second base.

7. The wafer processing system according to claim 3, characterized in that: The film expanding unit, the cutting unit and the heater are connected to the same base.

8. The wafer processing system according to claim 3, characterized in that: The base includes a first base and a second base, the film expanding unit and the cutting unit are connected to the first base, the heater is connected to the second base, and the first base is different from the second base.

9. The wafer processing system according to any one of claims 1 to 8, characterized in that: The cutting unit comprises: The first laser emits a first laser beam to the cutting path.

10. The wafer processing system according to any one of claims 1 to 8, characterized in that: The base is in contact with a first surface of the cutting film, and the film expanding unit is movable along a direction perpendicular to the first surface.

11. The wafer processing system according to claim 10, characterized in that: The film expansion unit comprises: A vacuum platform is in contact with the first surface of the cutting film.

12. The wafer processing system according to any one of claims 1 to 8, characterized in that: The wafer processing system further comprises: A second laser is connected to the base and emits a second laser beam into the wafer to form a preset dividing line; and The grinding mechanism is connected to the base, thins the wafer and divides the wafer into a plurality of grains contacting each other along the preset dividing lines.

13. The wafer processing system according to any one of claims 1 to 8, characterized in that: The thickness of the adhesive film is 50 μm to 130 μm.

14. The wafer processing system according to any one of claims 1 to 8, characterized in that: A plurality of the crystal grains are in contact with each other.

15. A semiconductor structure, characterized in that: include: Grain; as well as An adhesive film is attached to one side of the die; Wherein, the thickness of the adhesive film is 50 μm to 130 μm.

16. The semiconductor structure according to claim 15, characterized in that The crystal grain includes a metal layer, and the metal layer is away from the adhesive film.

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