Semiconductor assembly, plasma processing device and electric conduction and heat conduction gasket

Abstract

The utility model discloses a semiconductor assembly, a plasma processing device and a conductive and heat-conducting gasket. The semiconductor assembly comprises a first part; a second member; the electric conduction and heat conduction gasket is arranged between the first component and the second component and comprises a first surface and a second surface which are opposite, the first surface is provided with a plurality of discrete first protrusions, the first protrusions are attached to the first component, the second surface is provided with a plurality of discrete second protrusions, and the second protrusions are attached to the second component. The first component and the second component in the semiconductor assembly have good electric conduction and heat conduction performance, and particle pollution is not easy to generate.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a semiconductor component, a plasma processing device and a conductive and thermally conductive pad. Background Art

[0002] The plasma processing device includes an upper electrode assembly and a lower electrode assembly arranged opposite to each other, and the upper electrode assembly and the lower electrode assembly are composed of components of multiple different materials, and some adjacent components need to be electrically and thermally conductive. Taking the upper electrode assembly as an example, the upper electrode assembly includes a mounting substrate and a gas shower head arranged below the mounting substrate. If there is a gap between the contact surface of the two, it will affect the RF transmission and heat transfer. Moreover, under high temperature conditions, the gas shower head or the mounting substrate is deformed by heat, making the gap between the two uneven; or, in a high aspect ratio etching process that requires a high RF power of more than 10kW, the RF current and heat load of the upper electrode assembly increase accordingly, which will further affect the electrical or thermal conductivity between the gas shower head and the mounting substrate.

[0003] Therefore, there is an urgent need for an excellent conductive and thermally conductive gasket to be disposed between adjacent components to meet the conductive and thermally conductive requirements between the adjacent components and not easily generate particle contaminants to improve the yield of the wafer. Summary of the invention

[0004] The technical problem solved by the utility model is to provide a semiconductor component, a plasma processing device and a conductive and thermally conductive pad, so that the first component and the second component in the semiconductor component have good conductive and thermally conductive properties and are not prone to particle contamination.

[0005] In order to solve the above technical problems, the utility model provides a semiconductor component, including: a first component; a second component; a conductive and thermally conductive gasket, which is arranged between the first component and the second component, and includes a first surface and a second surface relative to each other, the first surface has a plurality of discrete first protrusions, the first protrusions are fitted with the first component, and the second surface has a plurality of discrete second protrusions, the second protrusions are fitted with the second component.

[0006] Optionally, the electrically conductive and thermally conductive gasket is a pure aluminum sheet or a silver foil sheet.

[0007] Optionally, a first groove is formed between adjacent first protrusions; and a second groove is formed between adjacent second protrusions.

[0008] Optionally, the roughness of the first surface is 10 microns to 2000 microns; the roughness of the second surface is 10 microns to 2000 microns.

[0009] Optionally, the roughness of the first surface is 10 microns to 50 microns; the roughness of the second surface is 10 microns to 50 microns.

[0010] Optionally, the conductive and thermally conductive gasket includes a central area and a peripheral area surrounding the central area, the roughness of the first surface of the peripheral area is greater than the roughness of the first surface of the central area; the roughness of the second surface of the peripheral area is greater than the roughness of the second surface of the central area.

[0011] Optionally, the maximum thickness range of the conductive and thermally conductive gasket is 0.1 mm to 1.5 mm.

[0012] Optionally, the first component is a mounting substrate, and the second component is a gas shower head; the material of the mounting substrate includes: aluminum alloy; the material of the gas shower head includes: single crystal silicon or silicon carbide.

[0013] Optionally, the first component is a mounting substrate, and the second component is an upper grounding ring; the material of the mounting substrate includes: aluminum alloy; the material of the upper grounding ring includes: single crystal silicon or silicon carbide.

[0014] Optionally, the first component is an insert ring, and the second component is a focus ring; the material of the focus ring includes: silicon or silicon carbide; the material of the insert ring includes aluminum alloy.

[0015] Optionally, the roughness of the first surface is greater than the roughness of the second surface.

[0016] Optionally, the first component is a plasma confinement device, and the second component is a middle grounding ring; the plasma confinement device is an aluminum alloy substrate, an anodized layer or a corrosion-resistant coating located on the aluminum alloy substrate; the middle grounding ring is an aluminum alloy substrate and an anodized layer located on the aluminum alloy substrate.

[0017] Optionally, the first surface and the second surface have the same roughness.

[0018] Optionally, it also includes: a mounting hole passing through the first component, the second component having a blind hole; a fastener, arranged in the mounting hole and the blind hole, for fixing the first component and the second component together, and part of the conductive and thermally conductive gasket is in a compressed state.

[0019] Correspondingly, the utility model also provides a plasma processing device, comprising: a reaction chamber, a lower electrode assembly is arranged at the bottom of the reaction chamber, and the lower electrode assembly is used to carry a substrate to be processed; and the above-mentioned semiconductor assembly.

[0020] Optionally, it also includes: an upper electrode assembly, located at the top of the reaction chamber and arranged opposite to the lower electrode assembly; a plasma confinement device, arranged around the lower electrode assembly; a middle grounding ring, located below the plasma confinement device; the upper electrode assembly includes a mounting substrate, a gas shower head located below the mounting substrate, and an upper grounding ring surrounding the gas shower head; and a radio frequency power source, used to apply radio frequency power to the lower electrode assembly through a matching network.

[0021] Correspondingly, the utility model also provides a conductive and thermally conductive gasket formed by a stamping process or an etching process, wherein the conductive and thermally conductive gasket comprises a first surface and a second surface opposite to each other, wherein the first surface has a plurality of discrete first protrusions, and the second surface has a plurality of discrete second protrusions.

[0022] Compared with the prior art, the technical solution of the utility model has at least the following beneficial effects:

[0023] In the semiconductor assembly provided by the technical solution of the utility model, a conductive and thermally conductive gasket is arranged between the first component and the second component, and the conductive and thermally conductive gasket has a first surface and a second surface relative to each other, and the first surface has a plurality of first protrusions. Since the height and distribution of the first protrusions are designed according to the needs, the contact area between the conductive and thermally conductive gasket and the first component can be increased. Similarly, the second surface has a plurality of second protrusions. Since the height and distribution of the second protrusions are designed according to the needs, the contact area between the conductive and thermally conductive gasket and the second component can be increased, so that the heat and electricity of the first component and the second component can be well transferred through the conductive and thermally conductive gasket. Although a gap is easily generated between the materials of the first component and the second component, the conductive and thermally conductive gasket has good elasticity, so the conductive and thermally conductive gasket can fill the gap well, so that the first component and the second component have good electrical and thermal conductivity. At the same time, since the conductive and thermally conductive gasket is a gasket of pure material, no adhesive is needed, so there will be no particle contamination caused by corrosion or aging of the adhesive. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the structure of an electrically conductive and thermally conductive gasket;

[0025] Figure 2 It is a structural schematic diagram of a plasma processing device of the utility model;

[0026] Figure 3 yes Figure 2 A magnified schematic diagram of the middle area A;

[0027] Figure 4 It is a structural schematic diagram of a conductive and thermally conductive gasket of the utility model;

[0028] Figure 5 Yes Figure 4 A schematic diagram of the structure of a semiconductor component with a conductive and thermally conductive gasket in an assembled and unheated state;

[0029] Figure 6 Yes Figure 4 A schematic diagram of the structure of a semiconductor component with a conductive and thermally conductive gasket in an assembled and heated state;

[0030] Figure 7 yes Figure 4 Schematic diagram of a method for preparing an electrically conductive and thermally conductive gasket;

[0031] Figure 8 It is a structural schematic diagram of another conductive and thermally conductive gasket of the utility model;

[0032] Fig. 9 Yes Figure 8 Schematic diagram of the structure of a semiconductor component with an electrically conductive and thermally conductive gasket. DETAILED DESCRIPTION

[0033] As described in the background art, existing conductive gaskets are prone to particle contamination.

[0034] In order to solve the above technical problems, the technical solution of the utility model provides a semiconductor component and a plasma processing device to meet the electrical and thermal conductivity requirements between adjacent components and is not prone to generating particle contaminants.

[0035] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] Current conductive thermal pads such as Figure 1 As shown, the conductive and thermally conductive pad has graphite layers A on both sides and an aluminum foil layer B in the middle. The graphite layers A on both sides are in contact with the mounting substrate and the gas shower head respectively.

[0037] The study found that the aluminum foil layer B plays a supporting role. The graphite layer A is also mixed with an adhesive, which provides elasticity for the conductive and thermally conductive gasket, giving the gasket a certain degree of compressibility and flexibility, and can fill the gap and compensate for the change in gap width caused by thermal deformation of the component. However, the upper and lower surfaces of the graphite layer A are in contact and friction with the surfaces of the mounting substrate and the gas shower head for a long time, which can easily cause graphite powder to fall off, which will make the thickness of the graphite layer A uneven, affecting the conductive and thermal effects. In addition, if graphite powder particles fall into the reaction chamber, it will also affect the wafer processing quality.

[0038] The semiconductor component and plasma processing device of the utility model are described in detail as follows:

[0039] Figure 2 The utility model is a schematic structural diagram of a plasma processing device.

[0040] Please refer to Figure 2 The plasma processing device includes a vacuum reaction chamber 100, which includes a substantially cylindrical reaction chamber side wall 101 made of metal material, and an opening (not shown in the figure) is provided on the reaction chamber side wall 101 for accommodating the substrate W to enter and exit. A gas shower head 120 and a base 110 arranged opposite to the gas shower head are arranged in the reaction chamber, and the gas shower head 120 is connected to a gas supply device 125 for conveying reaction gas to the vacuum reaction chamber and serving as an upper electrode of the vacuum reaction chamber. An electrostatic chuck 112 is provided above the base 110 and serves as a lower electrode of the vacuum reaction chamber, and a reaction area is formed between the upper electrode and the lower electrode. At least one RF power source 150 is applied to one of the upper electrode or the lower electrode through a matching network 152, and a RF electric field is generated between the upper electrode and the lower electrode to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. The above active particles can undergo various physical and chemical reactions with the surface of the substrate to be processed, so that the morphology of the substrate surface changes, that is, the etching process is completed. An exhaust pump (not shown in the figure) is also provided below the vacuum reaction chamber 100 to discharge the reaction byproducts from the reaction chamber and maintain the vacuum environment of the reaction chamber.

[0041] A mounting substrate 122 is also provided on the back of the gas shower head 120, and an upper grounding ring 160 is also provided around the periphery of the gas shower head 120. An electrostatic electrode (not shown in the figure) is provided inside the electrostatic chuck 112 to generate electrostatic suction to support and fix the substrate W to be processed during the process. A heating device (not shown in the figure) is provided below the electrostatic chuck to control the temperature of the substrate during the process. A focusing ring 134 is provided around the base, and the focusing ring 134 is used to adjust the electric field or temperature distribution around the substrate to improve the uniformity of substrate processing. A plasma confinement device 135 is provided around the focusing ring 134, and an exhaust channel is provided on the plasma confinement device. By reasonably setting the depth-width ratio of the exhaust channel, the plasma is confined to the reaction area between the upper and lower electrodes while the reaction gas is discharged, so as to avoid leakage of plasma to the non-reaction area and damage to the components in the non-reaction area. A middle grounding ring 136 is arranged below the plasma confinement device 135, and is used to provide electric field shielding for the plasma confinement device; a lower grounding ring 137 is arranged below the middle grounding ring, and the middle grounding ring 136 and the lower grounding ring 137 are electrically connected to form a radio frequency loop in the reaction chamber.

[0042] Specifically, the path of the RF loop is: the RF power source 150 applies RF power to the lower electrode assembly through the matching network 152, and is coupled to the upper electrode assembly in the reaction chamber through capacitance, and then is transmitted to the bottom wall of the reaction chamber through the reaction chamber side wall 101 → middle grounding ring 136 → lower grounding ring 137 in sequence, forming an RF loop. Therefore, gaskets with good conductive properties need to be provided between the mounting substrate 122 and the gas shower head 120, between the upper grounding ring 160 and the mounting substrate 122, and between the plasma confinement device 135 and the middle grounding ring 136.

[0043] In addition, if Figure 2 and Figure 3 As shown, Figure 3 for Figure 2 The enlarged view of the middle area A, the plasma processing device also includes: a ceramic ring 140 located below the focus ring 134. Since the focus ring 134 is exposed to the plasma for a long time, the surface material of the focus ring 134 will inevitably be corroded after a period of plasma treatment, so the height of the focus ring 134 will decrease accordingly, and the decreased height will seriously affect the distribution and morphology of the sheath layer in the edge area of ​​the substrate, which is easy to cause the etching rate and etching direction (edge ​​tilting) of the edge area of ​​the substrate to be different from the center area of ​​the substrate. To solve this problem, an insertion ring 190 is usually set between the focus ring 134 and the ceramic ring 140. The insertion ring 190 is a conductive material, such as aluminum, and the insertion ring 190 is electrically connected to a variable impedance device through a wire 191. By adjusting the capacitance value of the variable impedance device, the RF power delivered to the focus ring 134 can be effectively adjusted, thereby changing the height of the sheath layer above the focus ring 134, so that the center area of ​​the substrate to be processed and the sheath layer above the focus ring 134 have the same height, which is conducive to improving the etching uniformity. Therefore, a gasket with good conductive properties also needs to be provided between the focus ring 134 and the insert ring 190 .

[0044] As is known to all, when the process is carried out in the vacuum reaction chamber 100 of the plasma processing device, the plasma has a high energy, so that the temperature of the components exposed to the plasma environment is high. In order to prevent these components from being damaged due to excessive temperature, the heat of these components needs to be conducted away. Usually, a first cooling channel (not shown in the figure) is provided in the mounting substrate 122. The first cooling channel is used to transport a coolant, such as water. A thermally conductive pad is provided between the mounting substrate 122 and the gas shower head 120, and between the mounting substrate 122 and the upper grounding ring 160, which is conducive to conducting away the heat of the gas shower head 120 and the upper grounding ring 160, and is conducive to better controlling the temperature of the gas shower head 120 and the upper grounding ring 160.

[0045] A second cooling channel 180 is provided in the base 110 (see Figure 2 ), the second cooling channel 180 is used to transport a coolant, such as water. A heat-conducting pad is arranged between the focusing ring 134 and the insert ring 190, and between the plasma confinement device 135 and the middle grounding ring 136, which is beneficial to conduct away the heat of the focusing ring 134 and the plasma confinement device 135, and is beneficial to better control the temperature of the focusing ring 134 and the plasma confinement device 135.

[0046] In summary, gaskets with good electrical and thermal conductivity need to be provided between the mounting substrate 122 and the gas shower head 120 , between the upper grounding ring 160 and the mounting substrate 122 , between the plasma confinement device 135 and the middle grounding ring 136 , and between the focusing ring 134 and the insert ring 190 .

[0047] The conductive and thermally conductive pad of the utility model is described in detail as follows:

[0048] Figure 4 The utility model is a schematic diagram of the structure of a conductive and thermally conductive gasket that is not subject to external forces.

[0049] Please refer to Figure 4 The conductive and thermally conductive gasket 400 has a first surface B and a second surface C relative to each other. The first surface B has a plurality of mutually discrete first protrusions 401, and first grooves 402 are formed between adjacent first protrusions 401. The second surface C has a plurality of mutually discrete second protrusions 403, and second grooves 404 are formed between adjacent second protrusions 403.

[0050] In this embodiment, all the first protrusions 401 have the same height, all the second protrusions 403 have the same height, and the first protrusions 401 and the second protrusions 403 have the same height. The height of the first protrusions 401 and the second protrusions 403 ranges from 1 micron to 2000 microns, which is the height of the conductive and thermally conductive pad 400 when it is not subjected to external forces. The first surface B is bonded to the first component, and the second surface C is bonded to the second component. The first component and the second component have different thermal expansion coefficients. When the two are heated, due to the different deformation amounts of the two, a gap is easily formed between the two. In one embodiment, the roughness of the first surface B is: 10 microns to 2000 microns; the significance of selecting the roughness of the first surface B is: if the roughness of the first surface B is less than 10 microns, that is: the first surface is too smooth, so that the contact area between the first surface B and its first component is small, resulting in poor electrical and thermal conductivity between the first component and the second component through the first surface B; if the roughness of the first surface B is greater than 2000 microns, the roughness of the first surface B is too large, and the gap between the first component and the second component caused by thermal expansion is not so large, therefore, it is meaningless to set the roughness of the first surface B to be greater than 2000 microns.

[0051] The roughness of the second surface C is 10 micrometers to 2000 micrometers. The design significance of the roughness of the second surface C is the same as that of the roughness of the first surface B, which will not be elaborated here.

[0052] In another embodiment, the roughness of the first surface B is 10 microns to 50 microns; the roughness of the second surface C is 10 microns to 50 microns. The roughness of the first surface B and the second surface C can be set to ensure that the first surface B of the conductive and thermally conductive gasket 400 has good contact with the first component, and the second surface C has good contact with the second component, and can also ensure the morphology of the conductive and thermally conductive gasket 400, and prevent the first surface B and the second surface C from being deformed during the extrusion process due to excessive roughness.

[0053] Figure 5 The utility model comprises Figure 4 Schematic diagram of the structure of a semiconductor component with an electrically conductive and thermally conductive gasket.

[0054] It should be noted that Figure 5 Schematic diagram of the structure of the semiconductor component when assembled and not heated.

[0055] Please refer to Figure 5 The semiconductor component includes: a first component 200 , a second component 300 , and a conductive and thermally conductive pad 400 disposed between the first component 200 and the second component 300 .

[0056] In this embodiment, the first component 200 is a mounting substrate 122 (see Figure 2 ), the second component 300 is a gas shower head 120 (see Figure 2 ). The mounting substrate 122 has a mounting hole that penetrates the thickness thereof, and the gas shower head 120 has a blind hole, and the blind hole is arranged corresponding to the mounting hole. The fastener is arranged in the mounting hole and the blind hole, and is used to fix the mounting substrate 122 and the gas shower head 120 together. When no process is performed in the reaction chamber, the conductive and thermally conductive gasket 400 is in a compressed state between the mounting substrate 122 and the gas shower head 120, such as Figure 5 As shown. In this embodiment, when not in a thermally compressed state, the height of the first protrusion 401 and the second protrusion 403 ranges from (thickness of the conductive thermally conductive gasket 400 + one third of the roughness) to (thickness of the conductive thermally conductive gasket 400 + two thirds of the roughness). For example: the thickness of the conductive thermally conductive gasket 400 is 0.1 mm and the roughness is 100 μm. Then, after the mounting substrate 122 and the gas shower head 120 are assembled, the height of the first protrusion 401 and the second protrusion 403 ranges from (0.1 mm + 100 μm * 1 / 3) to (0.1 mm + 100 μm * 2 / 3), that is, 0.13 mm to 0.16 mm. This is not limited here. After the mounting substrate 122 and the gas shower head 120 are locked, the height of the first protrusion 401 and the second protrusion 403 can also be other values.

[0057] In other embodiments, the first component is a mounting substrate and the second component is an upper grounding ring; or, the first component is an insertion ring and the second component is a focusing ring; or, the first component is a plasma confinement device and the second component is a middle grounding ring.

[0058] Figure 6 The utility model comprises Figure 4 Schematic diagram of the structure of the semiconductor component of the conductive and thermally conductive gasket expanding due to heat during the process.

[0059] In this embodiment, the first component 200 is a mounting substrate 122 (see Figure 2 ), the second component 300 is a gas shower head 120 (see Figure 2 The material of the mounting substrate 122 includes: aluminum alloy. The material of the second component 300 includes: single crystal silicon or silicon carbide. The thermal expansion coefficient of aluminum alloy is 1.881×10e -5 / ℃ to 2.360×10e -5 / ℃, the thermal expansion coefficient of single crystal silicon or silicon carbide is 2.5×10e -6 / ℃, the thermal expansion systems of the two differ by nearly an order of magnitude. Therefore, with frequent temperature changes, there will be obvious relative displacement between the gas shower head 120 and the mounting substrate 122, and it is easy to generate a gap H between the gas shower head 120 and the mounting substrate 122, and the range of the gap H is: 0.05 microns to 1 mm. The maximum thickness of the conductive and thermally conductive gasket 400 is greater than or equal to the size of the gap, and the maximum thickness of the conductive and thermally conductive gasket 400 refers to the distance between the surface of the first protrusion and the surface of the second protrusion.

[0060] The material of the conductive thermal gasket 400 includes: pure aluminum sheet or silver foil sheet. The material of the conductive thermal gasket 400 has good resilience. Specifically, the resilience of the conductive thermal gasket 400 is tested by installing it between the mounting substrate 122 and the gas shower head 120. The height of the first protrusion 401 and the second protrusion 403 of the conductive thermal gasket 400 is compressed by two-thirds. After a period of time, the roughness of the first surface B and the second surface C is taken down and retested. The roughness of the first surface B and the second surface C is not significantly reduced. It can be seen that the conductive thermal gasket 400 has good resilience.

[0061] Since the mounting substrate 122 and the gas shower head 120 are easily warped by heat during the process, the size of the gap H formed between the two is not the same everywhere, but the gap H in the middle area of ​​the mounting substrate 122 and the gas shower head 120 is smaller than the gap H in the peripheral area. Since the conductive and thermally conductive gasket 400 has good resilience, the conductive and thermally conductive gasket 400 can not only fill the gap H in the middle area, but also fill the gap H in the peripheral area, so that the mounting substrate 122 and the gas shower head 120 have good electrical and thermal conductivity in both the middle area and the peripheral area.

[0062] Furthermore, since the conductive and thermally conductive gasket 400 is made of a single material, no adhesive is needed. Therefore, there is no problem of the adhesive gradually aging due to the effects of plasma and temperature to form particle contaminants.

[0063] In one embodiment, the first component 200 is a mounting substrate 122, and the second component 300 is an upper grounding ring 160. The material of the upper grounding ring 160 includes: single crystal silicon or silicon carbide, and the material of the mounting substrate 122 includes: aluminum alloy. Based on the same principle, the conductive and thermally conductive pad 400 is arranged between the mounting substrate 122 and the upper grounding ring 160 to improve the electrical and thermal conductivity between the two.

[0064] In another embodiment, the first component 200 is an insert ring 190, and the second component 300 is a focus ring 134. The focus ring 134 is made of silicon or silicon carbide. The insert ring 190 is made of a conductive material, such as aluminum.

[0065] In another embodiment, the first component 200 is a plasma confinement device 135, and the second component is a middle grounding ring 136. The material of the plasma confinement device 135 includes: an aluminum alloy substrate, an anodized layer or a corrosion-resistant coating on the aluminum alloy substrate, and the material of the middle grounding ring 136 includes: an aluminum alloy substrate and an anodized layer on the aluminum alloy substrate. Since the material of the plasma confinement device 135 is the same as that of the middle grounding ring 136, and the deformation amount of the two is also the same, the roughness of the first surface B and the second surface C of the conductive and thermally conductive pad 400 disposed between the two is the same.

[0066] Based on the same principle of disposing the conductive and thermally conductive gasket 400 between the mounting substrate 122 and the gas shower head 120, the conductive and thermally conductive gasket 400 is disposed between the mounting substrate 122 and the upper grounding ring 160, between the insert ring 190 and the focus ring 134, and between the plasma confinement device 135 and the middle grounding ring 136, which is beneficial to improving the electrical and thermal conductivity between the mounting substrate 122 and the upper grounding ring 160, between the insert ring 190 and the focus ring 134, and between the plasma confinement device 135 and the middle grounding ring 136. In addition, during the process of thermal expansion and contraction, the contact between the conductive and thermally conductive gasket 400 and the mounting substrate 122, the upper grounding ring 160, the insert ring 190, the focus ring 134, the plasma confinement device 135, and the middle grounding ring 136 is not easy to generate particle contamination.

[0067] Figure 7 yes Figure 4 The invention discloses a method for preparing an electrically conductive and thermally conductive gasket.

[0068] Please refer to Figure 7 , providing the embossing template in (a) and the gasket blank in (b); using the embossing template in (a) to emboss the upper surface and the lower surface of the gasket blank respectively to form the conductive and thermally conductive gasket 400 shown in (c) of the present invention.

[0069] The method for forming the thermally conductive pad 400 is not limited to Figure 7 The printed circuit board 400 may be formed by etching technology.

[0070] Figure 8 It is a structural schematic diagram of another conductive and thermally conductive pad of the utility model.

[0071] Please refer to Figure 8The electrically conductive and thermally conductive gasket 400 ′ includes a first surface B′ and a second surface C′ opposite to each other. The first surface B′ has a plurality of discrete first protrusions 401 ′, and the second surface C′ has a plurality of discrete second protrusions 403 ′.

[0072] A first groove 402 ′ is formed between adjacent first protrusions 401 ′, and a second groove 404 ′ is formed between adjacent second protrusions 403 ′.

[0073] In this embodiment, the roughness of the first surface B' is greater than that of the second surface C'. This design is suitable for the case where the deformation amount of the first component attached to the first surface B' due to heat is greater than the deformation amount of the second component attached to the second surface C' due to heat.

[0074] A method for preparing a conductive and thermally conductive pad 400' whose first surface B' has a roughness greater than that of a second surface C' Figure 7 The preparation method of the conductive and thermally conductive gasket is similar, except that the upper and lower surfaces of the gasket blank are respectively embossed with embossing templates with different roughnesses to obtain the conductive and thermally conductive gasket 400 ′.

[0075] The details are as follows:

[0076] Fig. 9 Yes Figure 8 Schematic diagram of the structure of a semiconductor component with an electrically conductive and thermally conductive gasket.

[0077] Please refer to Fig. 9 The first protrusion 401 ′ is in contact with the first component 200 , and the second protrusion 403 ′ is in contact with the second component 300 .

[0078] In one embodiment, the first component 200 is a mounting substrate, and the second component is a gas shower head; the material of the mounting substrate includes: aluminum alloy; the material of the gas shower head includes: single crystal silicon or silicon carbide.

[0079] In another embodiment, the first component is a mounting substrate, and the second component is an upper grounding ring; the material of the mounting substrate includes: aluminum alloy; the material of the upper grounding ring includes: single crystal silicon or silicon carbide.

[0080] In another embodiment, the first component is an insert ring, and the second component is a focus ring; the material of the insert ring is a conductive material, such as aluminum (which may also have an insulating layer such as anodizing); the material of the focus ring includes silicon or silicon carbide.

[0081] At the same temperature, since the deformation of aluminum is greater than that of silicon or silicon carbide, when the roughness of the first surface of the conductive and thermally conductive gasket 400 is set to be greater than the roughness of the second surface, it is beneficial to ensure that there is good contact between the first surface and the first component 200, and there is good contact between the second surface and the second component 300, so that the first component 200 and the second component 300 have good electrical and thermal conductivity.

[0082] Since the second component 200 and the third component 300 are prone to warping when heated, the gap between the two is no longer equal everywhere, but the gap in the central area is smaller than the gap in the peripheral area. Therefore, in order to better improve the electrical and thermal conductivity between the first component 200 and the second component 300, the roughness of the first surface of the peripheral area can be greater than the roughness of the first surface of the central area; the roughness of the second surface of the peripheral area is greater than the roughness of the second surface of the central area.

[0083] In summary, a conductive and thermally conductive gasket is arranged between the first component and the second component, and the conductive and thermally conductive gasket has a first surface and a second surface relative to each other, and the first surface has a plurality of first protrusions. Since the height and distribution of the first protrusions are designed according to the needs, the contact area between the conductive and thermally conductive gasket and the first component can be increased. Similarly, the second surface has a plurality of second protrusions. Since the height and distribution of the second protrusions are designed according to the needs, the contact area between the conductive and thermally conductive gasket and the second component can be increased, so that the heat and electricity of the first component and the second component can be well transferred through the conductive and thermally conductive gasket. Although a gap is easily generated between the first component and the second component, the conductive and thermally conductive gasket has good elasticity, so the conductive and thermally conductive gasket can fill the gap well, so that the first component and the second component have good electrical and thermal conductivity. At the same time, the conductive and thermally conductive gasket is not easy to generate particle contamination when in contact with the first component and the second component.

[0084] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

Claims

1. A semiconductor component, characterized in that: include: first component; The second component; The conductive and thermally conductive gasket is arranged between the first component and the second component, and includes a first surface and a second surface opposite to each other, wherein the first surface has a plurality of discrete first protrusions which are fitted with the first component, and the second surface has a plurality of discrete second protrusions which are fitted with the second component.

2. The semiconductor device according to claim 1, wherein: The conductive and thermally conductive gasket is a pure aluminum sheet or a silver foil sheet.

3. The semiconductor device according to claim 1, wherein: A first groove is formed between adjacent first protrusions; a second groove is formed between adjacent second protrusions.

4. The semiconductor device according to claim 1, wherein: The roughness of the first surface is 10 micrometers to 2000 micrometers; the roughness of the second surface is 10 micrometers to 2000 micrometers.

5. The semiconductor device according to claim 4, characterized in that The roughness of the first surface is 10 micrometers to 50 micrometers; the roughness of the second surface is 10 micrometers to 50 micrometers.

6. The semiconductor device according to claim 4, characterized in that The conductive and thermally conductive gasket includes a central area and a peripheral area surrounding the central area, the roughness of the first surface of the peripheral area is greater than the roughness of the first surface of the central area; the roughness of the second surface of the peripheral area is greater than the roughness of the second surface of the central area.

7. The semiconductor device according to claim 1, wherein: The maximum thickness range of the conductive and thermally conductive gasket is 0.1 mm to 1.5 mm.

8. The semiconductor device according to claim 1, wherein: The first component is a mounting substrate, and the second component is a gas shower head; The material of the mounting substrate includes: aluminum alloy; the material of the gas shower head includes: single crystal silicon or silicon carbide.

9. The semiconductor device according to claim 1, wherein: The first component is a mounting substrate, and the second component is an upper grounding ring; The material of the mounting substrate includes: aluminum alloy; the material of the upper grounding ring includes: single crystal silicon or silicon carbide.

10. The semiconductor device according to claim 1, wherein: The first component is an insert ring, and the second component is a focus ring; the material of the focus ring includes: silicon or silicon carbide; the material of the insert ring includes aluminum alloy.

11. The semiconductor component according to claim 8, 9 or 10, characterized in that: The roughness of the first surface is greater than the roughness of the second surface.

12. The semiconductor device according to claim 1, wherein: The first component is a plasma confinement device, and the second component is a middle grounding ring; the plasma confinement device is an aluminum alloy substrate, an anodized layer or a corrosion-resistant coating located on the aluminum alloy substrate; the middle grounding ring is an aluminum alloy substrate and an anodized layer located on the aluminum alloy substrate.

13. The semiconductor device according to claim 12, wherein: The first surface and the second surface have the same roughness.

14. The semiconductor device according to claim 1, wherein: Also includes: A mounting hole passes through the first component, and the second component has a blind hole, the blind hole corresponding to the mounting hole; A fastener is arranged in the mounting hole and the blind hole, and is used to fix the first component and the second component together, and part of the conductive and thermally conductive gasket is in a compressed state.

15. A plasma processing device, characterized in that: include: A reaction chamber, wherein a lower electrode assembly is disposed at the bottom thereof, and the lower electrode assembly is used to carry a substrate to be processed; A semiconductor component as claimed in any one of claims 1 to 14.

16. The plasma processing apparatus according to claim 15, wherein: Also includes: An upper electrode assembly is located at the top of the reaction chamber and is arranged opposite to the lower electrode assembly; a plasma confinement device is arranged around the lower electrode assembly; a middle grounding ring is located below the plasma confinement device; the upper electrode assembly includes a mounting substrate, a gas shower head located below the mounting substrate, and an upper grounding ring surrounding the gas shower head; a radio frequency power source is used to apply radio frequency power to the lower electrode assembly through a matching network.

17. An electrically conductive and thermally conductive gasket formed by a stamping process or an etching process, the electrically conductive and thermally conductive gasket comprising a first surface and a second surface opposite to each other, the first surface having a plurality of discrete first protrusions, and the second surface having a plurality of discrete second protrusions.

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